Growth conditions and electrical properties of KDP crystals: II. Dielectric permittivity measurements

The dielectric properties of potassium dihydrophosphate single crystals, which were grown from crystallization solutions at different pH, have been studied. The dielectric response of the single crystals is shown to vary substantially depending on the growth conditions and can be significantly different for samples from different growth sectors of the same single crystals and even within one sector. The results of this study are useful for optimizing the growth conditions of these single crystals.     

铌酸锂晶体的生长研究

近年来,铌酸锂晶体由于其自身所具有的多种优异性能和巨大的应用前景而受到了人们的广泛关注,但生长出满足不同市场要求的高质量铌酸锂单晶体比较困难.本文从晶体生长技术的角度综述了铌酸锂单晶体不同的生长方法以及各自的特点,并分析了在生长铌酸锂晶体时出现的一些问题.     

Lecithin crystal growth and molecular bilayers

Crystallization of phospholipids was studied and single crystals grown which diffracted X rays to a resolution of 0.7 Å. The preparation of single crystals required purified samples and was strongly influenced by solvent/crystal interactions. The growth conditions and properties of these phospholid single crystals are related to the formation and properties of bilayers as in biological membranes. A structure for the polar surface layer of bilayers is proposed.     

Role of flux on synthesis of poly single crystals of Ce3+ doped yttrium aluminum garnet

Yttrium aluminum garnet powders of good morphology are composed of tiny single crystals of regular faces. However, the growth mechanism of those ploy single crystals remains unknown. This paper provides morphology images of particles uncrushed, and it is found that those tiny crystals grow from large clusters in a pomegranate‐like manner. The morphology change occurs after phase transition, and is driven by flux, which provides a semi‐liquid environment around the crystals. This paper is beneficial for understanding growth mechanism of poly tiny single crystals of yttrium aluminum garnet powders.     

铌锌酸铅-钛酸铅单晶的生长及性能

本文系统地研究了(1-x)Pb(Zn_1/3Nb_2/3)O₃-xPbTiO₃(PZN-PT)单晶的光学透过率与结晶取向和组分的关系,发现四方相单晶的透过率明显大于三方相和准同型相界(MPB)。[001]方向极化的四方相PZN-12%PT单晶在0.5~5.8 μm的波段范围内,未镀增透膜的晶片透过率约为65%;准同型相界处PZN-8%PT单晶沿[011]方向极化的单晶透过率高于[001]和[111]方向。随着PT含量变高,单晶带隙逐渐变小。本文中还测量不同组分单晶的折射率,和大多数ABO₃型钙钛矿结构化合物相似,PZN-PT单晶的折射率较大,随着波长的减小其值迅速增大。晶体的色散现象明显,拟合得出各组分晶体的色散方程。利用塞纳蒙补偿法和双光束干涉法测量了电光系数,PZN-PT单晶的电光系数较大,在准同型相界附近其值达到极大,[001]方向极化PZN-8%PT单晶有效电光系数为460 pm/V,比广泛应用的铌酸锂高出20倍。四方相PZN-12%PT单晶有效电光系数为138 pm/V,在20~80 ℃范围内其值变化不大。良好的透光性能和优异的电光性质,使PZN-PT单晶可以满足高速低功耗电光器件的要求。     

Influence of Chromium and Titanium Oxide Dopants on the Real Structure and the Mechanical Properties of Corundum Single Crystals

The real structure and the mechanical properties of pure and doped corundum single crystals have been investigated. The single crystals were obtained by the Verneuil-method. The results allow to propose two different models concerning the influence of the chromium and titanium oxide on the properties of corundum single crystals. Optimum concentration of the chromium oxide impurities was approximately determined, from which corundum single crystals with higher hardness can be obtained. It was stated that titanium oxide impurities with some concentrations made the crystals more fragile without plastically changes in the region of the individual mosaic blocks.     

The influence of thermal screens on the temperature distribution,thermal stress,and defect structure during growth of shaped sapphire crystals

The ways in which a block structure is formed in shaped sapphire single crystals grown from melt by the Stepanov method are considered. The measured temperature distributions and results of a mathematical modeling of the heat exchange in the growth zones, as well as the calculated thermoelastic fields and measured residual stresses, are reported. The possibility of effectively controlling the thermal fields and growth of block-free crystals by choosing optimal screening is shown for single crystals in the form of tubes and basal-plane-faceted ribbons.     

The Search for Prospective Media for the Application as Active Laser Elements

On the basis of an earlier methodology for assessing the quality of laser materials wellknown chemical compounds are considered and among them emphasis is given to those, the single crystals of which can successfully be used as active media in solid-state lasers. Possible directions of the search for new chemical compounds are shown, the single crystals of which can without doubt be expected to be of interest for quantum electronics.     

核辐射探测单晶生长方法研究进展

核辐射探测是指用各种核辐射探测器来得到核辐射信息的过程,在军用、民用和科研等领域具有广泛的应用。作为核辐射探测核心的核辐射探测器,主要分为气体探测器、闪烁体探测器和半导体探测器。相比于气体探测器,闪烁体探测器和半导体探测器都需要晶体作为核心材料,晶体质量的品质在很大程度上决定了探测器性能的上限。为了获得性能更好的探测器,人们对探测器用单晶材料的生长方法进行了大量的研究。本文综述了近几年核辐射探测单晶生长方法研究的最新进展,总结了目前主流的晶体生长方法,包括溶液法、熔体法、气相法等,并对不同晶体的主要生长方法进行了归纳。     

单质直接气相生长ZnMgSe单晶

采用高纯Zn、Mg、Se2单质为原料,以NH4Cl作为反应输运剂,用化学气相输运(CVT)的方法一步成功生长出ZnMgSe单晶。通过XRD、RO-XRD、EDS、紫外可见分光光度计和光致发光(PL)技术研究了ZnMgSe晶体的结构、成份以及光学特性。结果表明:ZnMgSe单晶具有良好的结晶性能,在400～800 nm范围内透过率达到40%～50%,在2.2～2.6 eV范围内存在与深能级电子复合相关的发光带。研究证明由Zn、Mg、Se2单质在输运剂NH4Cl辅助下一步直接合成ZnMgSe单晶是可行的。     

掺杂对GaN晶体力学性能影响的研究

对GaN单晶力学性能的研究有助于解决其在生长、加工和器件应用中的开裂问题。本文围绕掺杂对GaN单晶力学性能的影响,通过纳米压痕法测试了不同掺杂类型(非掺、Si掺和Fe掺)GaN单晶的弹性模量和硬度,测试结果表明掺杂对GaN单晶的硬度有重要影响。Si掺、Fe掺GaN较非掺样品硬度有所提升,用重掺杂的氨热GaN单晶作为对照,也证明了这一结论。通过高分辨X射线衍射分析和原子力显微镜表征实验发现,晶体结晶质量、接触面积等因素对GaN单晶硬度的影响较小。对GaN表面纳米压痕滑移带长度和晶体晶格常数进行测试,结果表明,掺杂影响GaN单晶硬度的主要原因是缺陷对GaN位错增殖、滑移的阻碍作用和掺杂引起的GaN晶格常数的变化。     

Disorder in GeSe2 small crystals and medium-range structure in amorphous GeSe2

The Raman scattering spectra of various forms of GeSe₂, such as amorphous films, single crystals, and small crystals prepared by a gas-evaporation deposition technique, are investigated with an excitation photon energy ranging from 2.1 to 2.8 eV. In the spectra of the crystals, there are two Raman bands, originating from two types of breathing vibrations of the GeSe_4/2 tetrahedra: one is spread over the corner-sharing tetrahedra and the other is quasi-localized on the edge-sharing tetrahedra. In addition to the resonant Raman scattering related to the edge-sharing tetrahedra through the exciton transition observed with 2.71 eV excitation in the single crystals, a new resonant spectrum is found only in the small crystals with 2.54 eV excitation. With increasing disorder in the crystals, the intensity ratio between the two breathing vibration bands increases in the off-resonant excitation region. The Raman spectra in the amorphous states are ascribed to the breathing vibrations of GeSe_4/2 tetrahedra which form a medium-range structure topologically similar to that of crystalline fragments.     

Growth and properties of ZnMoO<Subscript>4</Subscript> single crystals

The crystallization conditions for obtaining zinc molybdate single crystals by the Czochralski and Kyropoulos methods from a melt have been studied. The growth parameters of large single crystals of optical quality are determined. The physicochemical and spectral-luminescent characteristics of the single crystals are studied.     

溶液法五氯硝基苯单晶生长的研究

测定PCNB在丙酮溶剂中的溶解度,采用恒温溶剂蒸发法首次在丙酮中成功生长出PCNB单晶.结果显示:302 K以下温区具有较小的温度系数,适用于恒温蒸发法生长单晶;生长出了厘米尺寸的PCNB晶体;红外和拉曼光谱的测量结果说明所生长的晶体中未包裹溶剂;X射线衍射分析表明,所生长出晶体结构为六方晶系,单晶质量较好.     

熔体法生长大尺寸有机晶体

大尺寸有机晶体在太赫兹波产生、中子探测、微波激射等多个关系国计民生、涉及国家安全的领域具有重要应用前景.但大尺寸有机单晶生长一直是国际公认的难题,无论是在生长理论、生长方法还是生长设备方面都远远落后,在整个人工晶体领域相对小众;而且有机晶体硬度低、脆性高、易解理等本征特性为加工和后期应用带来了很多困难,制约了相关领域的...     

溶剂蒸汽退火辅助微距升华法制备C8-BTBT单晶

有机半导体单晶由于具有内部长程有序的分子排列结构、缺陷及晶界少等优点,表现出优异的光电性能,是实现有机半导体器件实用化的一种重要材料。目前,研究者们已经发展出多种可应用于有机单晶的生长方法,其中,微距升华法是一种可以在大气环境下采用蒸镀的方式制备有机微/纳单晶的方法。然而,当将这种方法应用于C8-BTBT时发现,由于分子的熔点较低,蒸镀得到的是分子直接从液态凝固为无定形/多晶的结构。在本工作中,通过使用溶剂蒸汽退火的方式对其进行后处理,成功地将这种无定形/多晶结构转化为分立的单晶。为了表征所得到的晶体形貌和结构,分别使用光学显微镜、X射线衍射和原子力显微镜等仪器对其进行了表征,发现所制备的晶体结构具备单晶的典型特征。     

Crystal growth of potassium perchlorate in gelatin gels

The suitability of gelatin gel for the growth of good quality single crystals of potassium perchlorate has been investigated. Growth in a more rigid and simple apparatus has been accomplished and described here. The grown crystals were identified by X-ray analysis. A study of the relation of crystal morphology to concentration of feed solutions and growth temperature has also been made. Studies made on chemical etching of the cleavages have revealed that the crystals are relatively perfect. At times, large liquid inclusions which introduce stresses in the crystals are responsible for a large dislocation concentration.     

弛豫铁电单晶的多功能特性及其器件应用

以Pb(Mg_1/3Nb_2/3)O₃-PbTiO₃(PMN-PT或PMNT)为代表的弛豫铁电单晶具有远高于常用锆钛酸铅Pb(Zr_xTi_1-x)O₃(PZT)陶瓷的压电性能,引起了基于新一代压电单晶的功能器件研究热潮。本研究团队在国际上率先利用Bridgman方法生长出了大尺寸、高质量PMN-PT等弛豫铁电单晶(d₃₃～2 000 pC/N,k₃₃～92%),并对PMN-PT等弛豫铁电单晶的生长、多层次微观结构和性能调控进行了多方面的研究,发现弛豫铁电单晶不仅具有超高压电性能,还具有突出的热释电性能、电光性能以及与磁致伸缩材料复合形成磁电复合材料的超高磁电耦合性能。本研究团队多年来一直在努力推动弛豫铁电单晶在医用超声换能器、热释电红外探测器、电光器件、磁电型弱磁传感器等各种器件的应用研究。本文主要总结了弛豫铁电单晶的多功能特性,并介绍了本研究团队在弛豫铁电单晶器件应用上的研究结果。     

Impact damage in MgO single crystals

Optical absorption has been used to study the impact damage in MgO and MgO:Li single crystals. The results are similar to that obtained in compressed crystals, except in MgO:Li with stable Li° defects, in which the impacts do not produce an increase of the 5.7 eV absorption band.     

Low-angle boundaries in silicon crystals

The main types of low-angle boundaries (LAB) in single crystals with diamond-type lattice are determined. The scheme of dislocation alignments formation in thermal stress field of growing crystal which allows to derive types of possible LAB and their distribution in crystal is proposed. On its basis the LAB formation in Si single crystals grown in different crystallographic directions is considered. It appears that LAB types and their distribution in the crystal depend on the character of the thermal stresses and on the crystal growth direction.