铁磁/重金属双层薄膜结构中磁性状态的稳定性分析

本文在理论上研究了铁磁/重金属双层薄膜结构中自旋霍尔效应自旋矩驱动的磁动力学. 通过线性稳定性分析, 获得了以电流和磁场为控制参数的磁性状态相图. 发现通过调节电流密度和外磁场, 可以获得不同的磁性状态, 例如: 平面内的进动态、平面内的稳定态以及双稳态. 当外磁场的方向在一定的范围时, 通过调节电流密度可以实现磁矩的翻转和进动. 同时, 通过数值求解微分方程, 给出了这些磁性状态磁矩的演化轨迹.     

Spin Hall magnetoresistance in Nb/Y3Fe5O12 hybrids

We investigate the spin Hall magnetoresistance (SMR) in niobium (Nb) attached to Y₃Fe₅O₁₂ near the superconducting critical temperature (T_c) of Nb. The SMR vanishes after cooling the sample below T_c, and recovers if the temperature is raised. When a magnetic field larger than the critical field of Nb is applied, the SMR re‐emerges with an enhanced magnitude even if the temperature is below T_c. The experimental results demonstrate that the SMR could be completely suppressed by the coupling between superconducting condensation and spin–orbit interaction in superconductors. In addition to the fundamental physics on the charge–spin interactions in superconductors, our work adds a different dimension to superconducting spintronics. (© 2015 WILEY‐VCH Verlag GmbH &Co. KGaA, Weinheim)     

转换反射中光自旋霍尔效应的自旋堆积方向

从理论上和实验上研究了转换反射中光自旋霍尔效应的自旋堆积方向的方法,建立了描述光束在空气-棱镜界面反射的自旋堆积模型,揭示了横移与光束入射偏振角的定性关系。研究发现,当入射角小于布儒斯特角时,随着入射偏振角的逐渐增大,自旋堆积的方向发生反转。而当入射角大于布儒斯特角时,自旋堆积的方向不再随入射偏振角的变化而反转。结果表明,在光束入射角为确定值且小于布儒斯特角的情况下,可以通过调控光束的入射偏振角转换自旋堆积的方向。转换自旋堆积方向的研究为有效调控光自旋霍尔效应提供了新的途径。     

Spin orbit torques in Pt-based heterostructures with van der Waals interface

Spin orbit torques(SOTs) in ferromagnet/heavy-metal heterostructures have provided great opportunities for efficient manipulation of spintronic devices. However, deterministically field-free switching of perpendicular magnetization with SOTs is forbidden because of the global two-fold rotational symmetry in conventional heavy-metal such as Pt. Here,we engineer the interface of Pt/Ni heterostructures by inserting a monolayer MoTe_2 with low crystal symmetry. It is demonstrated that the spin orbit efficiency, as well as the out-of-plane magnetic anisotropy and the Gilbert damping of Ni are enhanced, due to the effect of orbital hybridization and the increased spin scatting at the interface induced by MoTe_2.Particularly, an out-of-plane damping-like torque is observed when the current is applied perpendicular to the mirror plane of the MoTe_2 crystal, which is attributed to the interfacial inversion symmetry breaking of the system. Our work provides an effective route for engineering the SOT in Pt-based heterostructures, and offers potential opportunities for van der Waals interfaces in spintronic devices.     

GaAs自旋注入及巨霍尔效应的研究

在自旋电子学研究中,一般以超晶格结构、自旋阀、隧道结来实现,另一种自旋注入典型方法是稀磁半导体材料,如GaMnAs,本文通过颗粒膜实现自旋注入,利用磁控溅射法将Fe颗粒嵌入GaAs阵体上,制备了(GaAs)₁₉Fe₈₁颗粒膜样品,在室温条件下观测到15 μΩ ·cm最大饱和霍尔电阻率,该效应比纯铁的饱和霍尔电阻率大了一个数量级,成功地实现了自旋注入. 关键词： 自旋注入 颗粒膜 巨霍尔效应     

Spin–lattice relaxation phenomena in the magnetic state of a suggested Weyl semimetal CeAlGe

ABSTRACT

In this work, we report the results of DC susceptibility, AC susceptibility and related technique, resistivity, transverse and longitudinal magnetoresistance and heat capacity on polycrystalline magnetic semimetal CeAlGe. This compound undergoes antiferromagnetic type ordering around 5.2 K (T¹). Under the application of external magnetic fields, parallel alignment of magnetic moments is favoured above 0.5?T. At low field and temperature, frequency and AC field amplitude response of AC susceptibility indicate the presence of spin–lattice relaxation phenomena. The observation of spin–lattice interaction suggests the presence of the Rashba–Dresselhaus spin–orbit interaction which is associated with inversion and time-reversal symmetry breaking. Additionally, the presence of negative and asymmetric longitudinal magnetoresistance indicates anomalous velocity contribution to the magnetoresistance due to the Rashba–Dresselhaus spin–orbit interaction which is further studied by heat capacity.     

多层介质中的光自旋霍尔效应研究

本文研究了光束通过多层介质分界面的光自旋霍尔效应. 以三层介质为例,建立了光束通过棱镜-空气-棱镜结构的传输模型,揭示了横移与空气介质的厚度、折射率梯度以及入射角等因素的定性关系. 发现对某一特定的圆偏振光束,改变两棱镜之间的折射率梯度可以调控横移,反射场与传输场的横移方向取决于折射率梯度. 相对于两层介质来说,高斯光束通过三层介质能明显地增强光自旋霍尔效应. 研究多层介质中光自旋霍尔效应横移的影响因素可为调控和增强光自旋霍尔效应提供理论依据. 关键词： 光自旋霍尔效应 横移 折射率梯度     

Spin textures of strongly correlated spin Hall quantum dots

We study the spin ordering of a quantum dot defined via magnetic barriers in an interacting quantum spin Hall edge. The spin‐resolved density–density correlation functions are computed. We show that strong electron interactions induce a ground state with a highly correlated spin pattern. The crossover from the liquid‐type correlations at weak interactions to the ground state spin texture found at strong interactions parallels the formation of a one‐dimensional Wigner molecule in an ordinary strongly interacting quantum dot.

     

Spin Josephson current in a ferromagnet/noncentrosymmetric superconductor junction

We investigate the equilibrium spin transport in a ferromagnet/noncentrosymmetric superconductor (FM/NCS) junction where the NCS has a dominant triplet order parameter and helical edge state. Based on the symmetry analysis and numerical calculation, we demonstrate that there is a nonzero spin supercurrent flowing in the junction, which stems from the exchange coupling between the FM magnetization and triplet Cooper-pair spin. It is also found that a transverse spin current other than the helical edge spin current is flowing along the interface of the junction, and its polarization is related to the longitudinal spin supercurrent. Besides, an equilibrium Hall current is also shown to flow along the junction’s interface due to the broken time-reversal symmetry from the FM.     

Conductance Oscillations in Spin Field-Effect Transistors

Ballistic spin transport in spin field-effect transistors is studied by taking into account the Rashba spinorbit coupling, interracial scattering, and band mismatch. It is shown that the spin conductance oscillation with the semiconductor channel length is a superimposition of the Rashba spin precession and spin interference oscillations. They have different oscillation periods π/κR and π/κ with κR the Rashba wavevector and κ the Fermi wavevector of the semiconductor channel, and play different parts of slow and rapid oscillations, depending upon the relative magnitude of π/κR and π/κ. Only at κ = κR does the spin conductance exhibit oscillations of a single period. Two types of different behaviors of the tunnelling magnetoresistance are discussed.     

自旋轨道耦合系统中的自旋流与自旋霍尔效应

作为自旋电子学的重要研究内容,如何在固态系统中产生、操控以及探测自旋流引起了研究人员的广泛兴趣。基于自旋轨道耦合的自旋霍尔效应为在非磁性半导体中产生自旋流提供了一种有效途径。然而,在具有自旋轨道耦合的系统中,自旋流并不守恒。如何理解这点并恰当地表述相应的连续性方程,成为自旋输运研究的基本问题之一。本文主要综述自旋轨道耦合系统中自旋流与自旋霍尔效应方面的研究进展。引入SU(2)规范势后,自旋流满足协变形式的连续性方程,该方程保证了SU(2)Kubo公式在不同规范固定下的自洽性。利用SU(2)场强张量,可以直接得到自旋密度和自旋流在SU(2)外场中受到的自旋力,该力在只有U(1)磁场时对应于Stern-Gerlach力。由于依赖杂质散射的外在自旋霍尔效应很难被利用,内在自旋霍尔效应的概念被提出:在非磁半导体中,U(1)电场会诱导出自旋流并导致系统边缘处的自旋积累。自旋霍尔效应已经在半导体和金属材料中被观察到。虽然在干净的二维电子气中自旋霍尔电导率是一普适常数e/8π,但杂质对它的影响却引起了人们的高度关注。通过引入退相干效应,自旋霍尔效应中杂质效应的一些令人困惑的理论结果,则得到清晰的解释。此外,本文还将介绍具有层间隧穿的双层二维电子气中的自旋输运现象。在能量简并点附近,自旋霍尔电导率和隧穿自旋电导率均会出现共振现象。当两层间的杂质势强度存在差异时,隧穿自旋电导率随门压的变化曲线呈现出非对称性,显示出自旋二极管效应。     

自旋轨道耦合系统中的自旋流与自旋霍尔效应

作为自旋电子学的重要研究内容,如何在固态系统中产生、操控以及探测自旋流引起了研究人员的广泛兴趣.基于自旋轨道耦合的自旋霍尔效应为在非磁性半导体中产生自旋流提供了一种有效途径.然而,在具有自旋轨道耦合的系统中,自旋流并不守恒.如何理解这点并恰当地表述相应的连续性方程,成为自旋输运研究的基本问题之一.本文主要综述自旋轨道耦合系统中自旋流与自旋霍尔效应方面的研究进展.引入SU(2)规范势后,自旋流满足协变形式的连续性方程,该方程保证了SU(2)Kubo公式在不同规范固定下的自洽性.利用SU(2)场强张量,可以直接得到自旋密度和自旋流在SU(2)外场中受到的白旋力,该力在只有U(1)磁场时对应于Stern-Gerlach力.由于依赖杂质散射的外在自旋霍尔效应很难被利用,内在自旋霍尔效应的概念被提出:在非磁半导体中,U(1)电场会诱导出自旋流并导致系统边缘处的自旋积累.自旋霍尔效应已经在半导体和金属材料中被观察到.虽然在干净的二维电子气中自旋霍尔电导率是一普适常数e/8π,但杂质对它的影响却引起了人们的高度关注.通过引入退相干效应,自旋霍尔效应中杂质效应的一些令人困惑的理论结果,则得到清晰的解释.此外,本文还将介绍具有层间隧穿的双层二维电子气中的自旋输运现象.在能量简并点附近,自旋霍尔电导率和隧穿白旋电导率均会出现共振现象.当两层间的杂质势强度存在差异时,隧穿自旋电导率随门压的变化曲线呈现出非对称性,显示出自旋二极管效应.     

Spin transfer in magnetic tunnel junctions with hot electrons

Recent data on the bias dependence of the spin transfer effect in magnetic tunnel junctions have shown that torque remains intact at bias voltages for which the tunneling magnetoresistance has been strongly reduced. We show that the current induced excitations due to hot electrons, while reducing the magnetoresistance, enhance both the charge current and the spin transfer in magnetic tunnel junctions in such a manner that the ratio of the torque to the charge current does not significantly change.     

On the role of spin polarization of electrons in the effect of giant injection magnetoresistance in the Ni-polymer-Cu system

The effect of spin polarization of electrons injected from a ferromagnet on the giant injection magnetoresistance was investigated for a ferromagnet-polymer-nonmagnetic metal experimental structure. The degree of spin polarization was varied by introducing a depolarizing nonmagnetic metal (Cu) layer between the ferromagnet and the organic transport layer. It was established that the coefficient of giant injection magnetoresistance depends significantly on the thickness of the depolarizing layer. In particular, the effect was not observed at a thickness larger than 12 nm and decreased exponentially at a smaller thickness as the thickness increased. The conclusion was drawn that the spin polarization of electrons plays a decisive role in the effect of giant injection magnetoresistance.     

Intrinsic spin Hall effect in silicene: transition from spin Hall to normal insulator

An intrinsic contribution to the spin Hall effect in two‐dimensional silicene is considered theoretically within the linear response theory and Green's function formalism. When an external voltage normal to the silicene plane is applied, the spin Hall conductivity is shown to reveal a transition from the spin Hall insulator phase at low bias to the conventional insulator phase at higher voltages. This transition resembles the recently reported phase transition in bilayer graphene. The spin–orbit interaction responsible for this transition in silicene is much stronger than in graphene, which should make the transition observable experimentally. (© 2012 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Spin Polarization and Spin‐Flip Through Phosphorene Superlattice

The spin‐dependent transport properties, including spin polarization and spin‐flip for phosphorene superlattice in the presence of an extrinsic Rashba spin‐orbit interaction (RSOI) based on the transfer matrix method, are studied. The results show that the number of barriers in the superlattice structure plays a dominant role in output spin polarization, which can be used in designing optimized spintronic devices. In addition, by controlling on the Rashba strength, an incident spin‐up electron can be transmitted as a spin‐down electron. Also, it enables to convert the unpolarized incident electronic beam (with zero spin polarization) into an arbitrary output spin polarization, which plays a significant role in qubit circuits.     

High-field Hall resistivity and magnetoresistance of electron-doped Pr2-xCexCuO4-delta

We report resistivity and Hall effect measurements in electron-doped Pr2-xCexCuO4-delta films in magnetic field up to 58 T. In contrast to hole-doped cuprates, we find a surprising nonlinear magnetic field dependence of Hall resistivity at high field in the optimally doped and overdoped films. We also observe a crossover from quadratic to linear field dependence of the positive magnetoresistance in the overdoped films. A spin density wave induced Fermi surface reconstruction model can be used to qualitatively explain both the Hall effect and magnetoresistance.     

Spin filtering magnetic modulation and spin-polarization switching in hybrid ferromagnet/semiconductor structures

Electron spin-polarization modulation with a ferromagnetic strip of in-plane magnetization is analyzed in a hybrid ferromagnet/semiconductor filter device.The dependencies of electron spin-polarization on the strip’s magnetization strength,width and position have been systematically investigated.A novel magnetic control spin-polarization switch is proposed by inserting a ferromagnetic metal(FM)strip eccentric in relation to off the center of the spin filter,which produces the first energy level spin-polarization reversal.It is believed to be of significant importance for the realization of semiconductor spintronics multiple-value logic devices.     

Spin valve effect and negative tunnel magnetoresistance in a quantum dot transistor

We study the spin polarized transport through a quantum dot transistor. It is shown that the interplay of large Coulomb interaction and optically induced spin accumulation gives rise to the spin valve effect over a range of bias. We also find negative tunnel magnetoresistance for system with ferromagnetic electrodes.