Detection Limits of Grazing-Exit EPMA for Particle Analysis

 In conventional electron probe microanalysis (EPMA), the electron-induced X-rays are measured at large take-off angles of about 45°. In the grazing exit EPMA (GE-EPMA) method, they are measured at small angles (< 1°). X-rays emitted from deep positions can not be detected at grazing exit angles due to refraction effects at sample-vacuum interface; therefore, it is possible to measure X-rays emitted only from near the surface with a low background. GE-EPMA is especially suitable for the analysis of particles deposited on a flat sample carrier. The detection limits of GE-EPMA were investigated for artificial particles (Al₂O₃, Fe₂O₃ and PbO₂ , particle sizes: 1 ∼ 18 μm) deposited on flat sample carriers of Au thin films–Si wafers. The detection limits improved with decreasing exit angle. The detection limits for characteristic X-rays at an exit angle of approximately 1.1° were 2–4 times lower than at 45°. A minimum detection limit of ca. 0.1% was obtained for Al in small particles.     

Effects of elastic scattering and analyzer‐acceptance angle on the analysis of angle‐resolved X‐ray photoelectron spectroscopy data

We have made calculations of N 1s, O 1s, Si(oxide) 2p, Hf 4f, and Si(substrate) 2p photoelectron intensities at selected emission angles for films of SiO_1.6N_0.4 and HfO_1.9N_0.1 of various thicknesses on silicon. These calculations were made with the National Institute of Standards and Technology (NIST) Database for Simulation of Electron Spectra for Surface Analysis (SESSA) to investigate effects of elastic scattering and analyzer‐acceptance angle that could be relevant in the analysis of angle‐resolved X‐ray photoelectron spectroscopy (ARXPS) experiments. The simulations were made for an XPS configuration with a fixed angle between the X‐ray source (i.e. for the sample‐tilting mode of ARXPS) and with Al and Cu Kα X‐ray sources. The no‐loss intensities changed appreciably as elastic scattering was switched ‘on’ and ‘off’, but changing the analyzer‐acceptance angle had a smaller effect. Ratios of intensities for each line from the overlayer film for the least realistic model condition (elastic scattering switched ‘off’, small analyzer‐acceptance angle) to those from the most realistic model condition (elastic scattering switched ‘on’, finite analyzer‐acceptance angle) changed relatively slowly with emission angle, but the corresponding intensity ratio for the Si(substrate) 2p line changed appreciably with emission angle. The latter changes, in particular, indicate that neglect of elastic‐scattering effects can lead to erroneous results in the analysis of measured ARXPS data. The elastic‐scattering effects were larger in HfO_1.9N_0.1 than in SiO_1.6N_0.4 (due to the larger average atomic number in the former compound) and were larger with the Al Kα X‐ray source than with the Cu Kα source because of the larger cross sections for elastic scattering at the lower photoelectron energies. Copyright © 2010 John Wiley & Sons, Ltd.     

The centrosymmetric dimer of di­chloro­(tri­methyl­siloxy)­aluminium

The title mol­ecule is dimeric, i.e. di‐μ‐tri­methyl­siloxy‐bis­(di­chloro­aluminium), [Al₂Cl₄(C₃H₉Si)₂], and possesses exact crystallographic inversion symmetry. The O atoms of the tri­methyl­siloxy groups bridge the two Al atoms to form a four‐membered ring. The Si—O bond distance [1.711 (3) Å], the Al—O mean bond distance [1.806 (4) Å] and the mean Si—C bond distance [1.875 (6) Å] appear to agree well with standard data. Mean values for C—Si—C, O—Si—C, and Si—O—Al angles are 112.9 (3), 105.8 (2), and 131.8 (2)° repectively. The two ring angles O—Al—O and Al—O—Al are 84.43 (16) and 95.57 (16)°, respectively.     

Grazing-exit electron probe X-ray microanalysis (GE-EPMA): Fundamental and applications

Electron probe microanalysis (or Scanning electron microscope-energy dispersive X-ray spectrometry) has been studied under grazing-exit conditions. That is, characteristic X-rays are detected at a very small take-off (exit) angle; the technique is known as grazing-exit electron probe microanalysis (GE-EPMA). Fundamental aspects, instrumentation, and characteristics of grazing-exit electron probe X-ray microanalysis method are described here. Since the observation depth decreases as the exit angle decreases, theoretically to a few nanometers, surface analysis is possible in grazing-exit electron probe X-ray microanalysis. Of course, the size of the electron beam is also small—less than 1 μm, enabling localized surface analysis. In the case of total reflection X-ray spectrometry that allows surface analysis, the whole sample surface must be flat. However, the requirement for flatness is not as strict in grazing-exit electron probe X-ray microanalysis. Grazing-exit electron probe X-ray microanalysis measurements can easily be applied using a commercially available electron probe microanalysis (or Scanning electron microscope-energy dispersive X-ray spectrometry) instrument. To change and control the exit angle in grazing-exit electron probe X-ray microanalysis, the inclination of the sample stage or movement of the X-ray detector is all that is required. Theoretically, this study shows that grazing-exit electron probe X-ray microanalysis would be useful in improving the lateral resolution of the sample surface. In addition, the study demonstrates that grazing-exit electron probe X-ray microanalysis can be applied successfully for surface, thin-film, and particle analyses. As an optional method of electron probe microanalysis, grazing-exit electron probe X-ray microanalysis will be useful in expanding the research fields of normal electron probe microanalysis.     

Localized thin-film analysis by grazing-exit electron probe microanalysis

We have studied the application of grazing-exit electron probe microanalysis (GE-EPMA) for surface and thin-film analysis. In this method, characteristic X-rays are measured at small take-off angles of less than 1°. Under grazing-exit conditions, the X-rays emitted from deep inside the sample are not detected because they are stopped by a slit mounted in front of the energy-dispersive X-ray detector. Hereby, it becomes possible to perform localized surface analysis with GE-EPMA. We applied this method to thin-film analysis of a small surface area. The exit-angle dependence of the characteristic X-ray intensities was measured for thin films of Cr and Ti. Thickness and density of thin films were determined by fitting the experimental plots with theoretically calculated curves. Differences were found in the densities of two Cr thin films deposited by magnetron sputtering and vacuum evaporation. The advantage of GE-EPMA is that non-destructive thin-film analysis of small surface areas can be incorporated in simple scanning electron microscope (SEM) analysis.     

Behavior of the continuous X-ray background in grazing-exit electron probe X-ray microanalysis

The energy distribution of the background radiation originating from two kinds of substrate materials has been studied using Electron Probe X-Ray Microanalysis (EPMA) at grazing-exit angles. The different behavior between tendencies of background reduction for the silicon and the gold substrates at the grazing exit angle is explained using a critical energy concept. It is also shown experimentally that a gold substrate results in a lower background intensity than a silicon substrate in the energy region 5–7 keV, while on the other hand, for elements with X-ray lines of 2–3 keV, it is advantageous to perform the analysis when such elements are deposited on the silicon substrate.     

Two modifications of a five‐coordinate silicon complex

TBPY‐5‐34‐(Butane‐1,4‐diyl)(2‐{[1‐(2‐oxidophenyl)ethylidene‐κO]amino‐κN}ethanolato‐κO)silicon, C₁₄H₁₉NO₂Si, crystallizes in two modifications. The monoclinic form, (IIm), was obtained by crystallization over a period of 2 d at room temperature; the orthorhombic form, (IIo), crystallized overnight at 248 K. The main difference between the two molecular structures involves the angles in the equatorial plane of the trigonal bipyramid around silicon. Form (IIm) has an O—Si—O angle of ca 121° and O—Si—C angles of ca 121 and 116°. In form (IIo), the corresponding angles are ∼123, 124 and 111°. There are also significant differences in the packing: (IIm) shows π stacking, whereas (IIo) does not.     

Site Preference of Cations and Structural Variation in MgAl2–xGaxO4 (0 ≤ x ≤ 2) Spinel Solid Solution

The crystal structures of MgAl_2–xGa_xO₄ (0 ≤ x ≤ 2) spinel solid solutions (x = 0.00, 0.38, 0.76, 0.96, 1.52, 2.00) were refined using ²⁷Al MAS NMR measurements and single crystal X‐ray diffraction technique. Site preferences of cations were investigated. The inversion parameter (i) of MgAl₂O₄ (i = 0.206) is slightly larger than given in previous studies. It is considered that the difference of inversion parameter is caused by not only the difference of heat treatment time but also some influence of melting with a flux. The distribution of Ga³⁺ is little affected by a change of the temperature from 1473 K to 973 K. The degree of order‐disorder of Mg²⁺ or Al³⁺ between the fourfold‐ and sixfold‐coordinated sites is almost constant against Ga³⁺ content (x) in the solid solution. A compositional variable of the Ga/(Mg + Ga) ratio in the sixfold‐coordinated site has a constant value through the whole compositional range: the ratio is not influenced by the occupancy of Al³⁺. The occupancy of Al³⁺ is independent of the occupancy of Ga³⁺, though it depends on the occupancy of Mg²⁺ according to thermal history. The local bond lengths were estimated from the refined data of solid solutions. The local bond length between specific cation and oxygen corresponds with that expected from the effective ionic radii except local Al–O bond length in the fourfold‐coordinated site and local Mg–O bond length in the sixfold‐coordinated site. The local Al–O bond length in the fourfold‐coordinated site (1.92 Å) is about 0.15 Å longer than the expected bond length. This difference is induced by a difference in site symmetry of the fourfold‐coordinated site. The nature that Al³⁺ in spinel structure occupies mainly the sixfold‐coordinated site arises from the character of Al³⁺ itself. The local Mg–O bond length in the sixfold‐coordinated site (2.03 Å) is about 0.07 Å shorter than the expected one. Difference Fourier synthesis for MgGa₂O₄ shows a residual electron density peak of about 0.17 e/ų in height on the center of (Ga_0.59 Mg_0.41)–O bond. This peak indicates the covalent bonding nature of Ga–O bond on the sixfold‐coordinated site in the spinel structure.     

Grazing-exit X-ray spectrometry for surface and thin-film analyses.

Electron-probe x-ray micro analysis (EPMA) and particle-induced x-ray emission analysis (PIXE) were performed under grazing-exit conditions. To control the exit angle (take-off angle), a new sample holder having a stepping motor was developed for grazing-exit EPMA. A carefully polished surface of a stainless-steal sample was measured. The surface of stainless steel is normally covered with a thin native oxide layer. The intensity ratio of Cr K(alpha) to Fe K(alpha) increases significantly at the grazing angle, becoming about 5-times larger at 0.2 degrees than at 40 degrees. This result indicates that grazing-exit EPMA is useful for surface analysis. In addition, a new PIXE equipment was developed for grazing-exit x-ray measurements. The sample is fixed and the x-ray detector is moved by applying a linear stage. Preliminary experimental results of grazing-exit PIXE are also shown.     

Sol–gel preparation of mesoporous Al2O3–SiO2 glasses: structural evolution monitored by solid state NMR

Glasses along the composition line 0.5Al₂O₃–xSiO₂ (1 ≤ x ≤ 6) were prepared via a novel sol–gel route using tetraethylorthosilicate and aluminum lactate as precursors. The structural evolution from solution to gel to glass is monitored by standard ²⁷Al and ²⁹Si nuclear magnetic resonance (NMR) spectroscopies, revealing important insights about molecular level mechanisms occurring at the various stages of glass formation. Under the experimental conditions reported, silica and alumina precursors undergo homoatomic condensation processes when the gel is heat treated at about 100 and 300 °C, respectively, and only little heteroatomic co-condensation occurs in this temperature range. The latter is promoted only upon elimination of the residual lactate and water ligands upon annealing the gels above 300 °C. Following calcination at 650 °C, mesoporous glasses are obtained, having average pore diameter of about 3 nm and a surface areas near 500 m²/g. Si–O–Al connectivities are detected by ²⁹Si magic angle spinning (MAS)-NMR. ²⁷Al MAS-NMR spectra reveal aluminum in four-, five- and six-coordination. The spectra differ significantly from those of other sol–gel derived Al₂O₃–SiO₂ materials prepared from different precursor routes, suggesting that the lactate route results in a higher degree of compositional homogeneity.     

Tris[3,6‐di‐tert‐butyl‐1‐(isoquinolin‐1‐yl)naphthalen‐2‐olato‐κ2N,O]aluminium(III) toluene sesquisolvate

The central Al^III atom of the title compound, [Al(C₂₇H₂₈NO)₃]·1.5C₇H₈, has octahedral geometry in which the three N atoms are arranged in a meridional fashion. One of the toluene solvent molecules is located on a general position, while the second is disordered around a centre of inversion. The ligand molecule has axial chirality, and two of the three ligands in the complex exhibit the same stereochemistry. The three independent chelate rings exhibit significantly different bite angles at the metal atom, with one [83.72 (8)°] notably smaller than the other two [87.22 (8) and 87.13 (8)°]. Calculation of the solid angle covered by the ligands at the metal atom reveals that coverage is greatest for the ligand group with the shortest Al—O bond distance.     

The crystal structure of t-Bu2Si(OH)F. A cyclic hydrogen-bonded tetramer

An X-ray diffraction study has shown that t-Bu₂Si(OH)F crystallizes as hydrogen-bonded tetramers. The fluoride ligand does not take part in the hydrogen bonding, which involves OH--O linkages with an OH--O angle of 160°; the O---O---O angles are 89.7(3)°, but the four oxygen atoms are not quite coplanar (space group I$\text{4}$). The t-BuSiBu-t angle is 120.5(6)°.     

Electron diffraction study on the molecular structure of methyltrimethoxysilane

The electron diffraction data for methyltrimethoxysilane are consistent with a C₃ symmetry model, the predominant forms of which have rotational angle(s) between 100 and 155° around the SiO bond (the anti conformation of the CSiOC chain would respond to 0°). There is probably large amplitude motion around the SiO bonds. The following bond lengths and bond angles were determined: r_a(CH) 1.093 ± 0.005, r_a(SiC) 1.842 ± 0.013, r_a(SiO) 1.632 ± 0.004, r_a(OC) 1.425 ± 0.004 », ∠CSiO 109.6 ± 0.5°. and ∠SiOC 123.6 ± 0.5°.     

An electron diffraction study of the molecular structure of hexamethyldisiloxane

An electron diffraction determination of the molecular geometry of hexamethyldisiloxane has removed much of the uncertainty concerning this structure. The length of the SiO bond and the SiOSi bond angle were determined to be 1.631 ± 0.003 Å and 148 ± 3°, respectively. The experimental data are consistent with a staggered conformation (C_2v symmetry) while a model with twist angles around the SiO bonds of about 30° cannot be excluded. The molecule is probably performing large amplitude intramolecular motion.     

Studies of alkylmetal alkoxides of aluminium,gallium and indium : IV. The molecular structure of dimethylaluminium t-butoxide dimer by gas phase electron diffraction

The electron diffraction data for gaseous dimethylaluminium t-butoxide dimer are consistent with a molecular model of effective D_2h symmetry. The Al₂O₂ ring is planar and the three valencies of the O atoms are lying in a plane. The t-butyl groups undergo nonhindered or slightly hindered internal rotation. The most important bond distances and valence angles are: AlO = 1.864(6), AlC = 1.962(15), OC = 1.419(12), CC = 1.533(5) Å, ∠AlOAl = 98.1(0.7), ∠CAlC = 121.7(1.7) and ∠OCC = 110.4(0.5)°.     

The crystal and molecular structure of hexadecaphenyloctasiloxyspiro(9,9)titanate(IV)

The crystal and molecular structures of the title compound have been determined by single crystal X-ray diffraction methods. In the spiro molecule, the metal atom has a geometry very close to tetrahedral, with OTiO angles of 107.9–111.0(2)° and very short TiO bonds of length 1.777–1.791(5)Å. The two TiO₅Si₄ rings have different, ill-defined conformations; the SiO bond lengths and SiOSi angles are similar to those in (SiO)_n rings.     

Ultrathin SiO2 on Si. VII. Angular accuracy in XPS and an accurate attenuation length

Following an earlier study of the uncertainties for defining thicknesses by angle‐resolved XPS, one of the major instrumental uncertainties has been evaluated that limits both precision and accuracy. For analysis of the thicknesses of SiO₂ on Si, certain angles of emission have been recommended, but an error of 1° in these angles leads directly to an error in the thickness of ～1% from this contribution alone. This is significant since the total uncertainty required in the (International technology roadmap for semiconductors) ITRS is only 1%. In many instruments, to reduce sample‐stage vibration and for other reasons, the angle and other setting adjustments are engineered with backlash. This, combined with the manufacturer's tolerances, can lead to angular errors above 1°. We report here a device using a laser and reflectors, fixed to the sample mount, that allow the angle of emission to be set to a precision better than 0.1° and, furthermore, a method to set the zero angle of emission to 0.1°. Using this geometrical device as well as by measurements of intensities in XPS, it is deduced that the data in our earlier report for the CCQM (Consultative Committee for Amount of Substance) intercomparison were for angles 1.89° ± 0.15° too high. Consequently, by a re‐analysis of all of that data, we find that our recommended attenuation length data for the Si 2p photoelectrons in thermal SiO₂ using Mg or Al Kα X‐rays should be increased to 2.996 nm and 3.485 nm, respectively, an increase of 1.2% on the originally calculated values. These values now have standard uncertainties of 0.54% instead of the 20% of the TPP‐2M calculations. This leads to an improved accuracy in the measurement of ultrathin thermal oxides on silicon by XPS, of better than 1% for thicknesses greater than 1.5 nm but less than 8 nm. © Crown copyright 2005. Reproduced with the permission of Her Majesty's Stationery Office. Published by John Wiley & Sons, Ltd.     

Effective attenuation lengths for photoelectrons in thin films of silicon oxynitride and hafnium oxynitride on silicon

We have used the National Institute of Standards and Technology Database for the Simulation of Electron Spectra for Surface Analysis (SESSA) to simulate photoelectron intensities for thin films of SiO_1.6N_0.4 and HfO_1.9N_0.1 on silicon with excitation by Al Kα X‐rays. We considered Si 2p_3/2 photoelectrons from SiO_1.6N_0.4 and the substrate and Hf 4f_7/2 photoelectrons from HfO_1.9N_0.1. The simulations were performed for ranges of film thicknesses and photoelectron emission angles and for two common configurations for X‐ray photoelectron spectroscopy (XPS), the sample‐tilting configuration and the Theta Probe configuration. We determined photoelectron effective attenuation lengths (EALs) by two methods, one by analyzing photoelectron intensities as a function of film thickness for each emission angle (Method 1) and the other by analyzing photoelectron intensities as a function of emission angle for each film thickness (Method 2). Our analyses were made with simple expressions that had been derived with the assumption that elastic‐scattering effects were negligible. We found that EALs from both methods were systematically larger for the Theta Probe configuration, by amounts varying between 1% and 5%, than those for the sample‐tilting configuration. These differences were attributed to anisotropy effects in the photoionization cross section that are expected to occur in the former configuration. Generally, similar EALs were found by each method for each film material although larger EALs were found from Method 2 for film thicknesses less than 1.5 nm. SESSA is a useful tool for showing how elastic scattering of photoelectrons modifies EALs for particular materials, film thicknesses, and XPS configurations. Copyright © 2012 John Wiley & Sons, Ltd.     

Influence of carbon on the interfacial contact angle between alumina and liquid aluminum

The wetting of alumina by pure liquid aluminum was investigated over the temperature range 900–1300°C by the sessile drop method under a dynamic vacuum of 10^?4–10^?5 Pa. When the substrate is carbon coated, the terminal contact angle is reduced to 40° at 1300°C for times longer than 4500 s. In the absence of carbon, the final angle is 82° for the same conditions. Reactive wetting is suggested by the observation of undercutting of the substrate and ridge formation at the leading edge of the liquid aluminum in all carbon‐coated samples. Based on energy considerations, the following is among the thermodynamically favorable reactions: 4Al + 3C → Al₄C₃. Possible mechanisms for the observed carbon‐enhanced wettability in the system are discussed. Copyright © 2003 John Wiley & Sons, Ltd.     

Feasibility study of three-dimensional XRF spectrometry using μ-X-ray beams under grazing-exit conditions

Grazing-exit XRF (GE-XRF), where the X-ray fluorescence is measured at small take-off angles, is a method related to TXRF. It has been demonstrated that GE-XRF is useful for surface, thin-film and particle analyses. In GE-XRF, it is possible to use a μ-X-ray beam at a normal incidence. Thus, a laboratory GE-XRF instrument was developed in combination with a μ-XRF setup. A μ-X-ray beam was produced by the combination of a single capillary and a pinhole aperture. It was demonstrated that depth information could be obtained by using this setup and changing the exit angle. Therefore, this instrument enables measurement of surface-sensitive line scanning and elemental mapping under grazing-exit conditions. In principle, measuring the elemental X-ray mappings at different exit angles enables the reconstruction of three-dimensional elemental distributions. To confirm the feasibility of three-dimensional XRF, a type of Japanese lacquerware, ‘Tamamushi-nuri’, which has a layered structure near the surface, was measured.