Potential of Total Reflection and Grazing Incidence XRF for Contamination and Process Control in Semiconductor Fabrication

 The actual detection limits of total reflection X-ray fluorescence (TXRF) are determined and compared to those of destructive physical analytical methods like secondary ion mass spectrometry (SIMS) and chemical methods like vapour phase decomposition in combination with inductively coupled plasma-mass spectrometry (VPD-ICP-MS). The elements Ca, Ti, Cr, Fe, Cu were analyzed on a Si wafer with 10 nm thermal oxide using TXRF and VPD-ICP-MS. The deviation of the TXRF and the VPD-ICP-MS results is less than 30%. The thickness, composition and density of a Co/Ti two-layer stack were determined using angle dependent total reflection and grazing incidence X-ray fluorescence (A-TXRF). The obtained data were compared with X-ray reflectometry (XRR) and energy filtered transmission electron microscopy (EFTEM). The agreement between TEM and A-TXRF is excellent for the determination of the thickness of the metal layers. From these results we conclude, that A-TXRF permits the accurate determination of composition, thickness and density of thin metallic layers. The results are discussed regarding detection efficiency, acquisition time, accuracy and reproducibility.     

High-energy-resolution grazing emission X-ray fluorescence applied to the characterization of thin Al films on Si

The grazing emission X-ray fluorescence (GEXRF) technique was applied to the analysis of different Al films, with nominal thicknesses in the range of 1 nm to 150 nm, on Si wafers. In GEXRF the sample volume from which the fluorescence intensity is detected is restricted to a near-surface region whose thickness can be tuned by varying the observation angle. This is possible because of the refraction of the fluorescence X-rays and the quite long emission paths within the probed sample. By recording the X-ray fluorescence signal for different shallow emission angles, defined relatively to the flat, smooth sample surface, the deposited Al surface layers of the different samples could be well characterized in terms of layer thickness, layer density, oxidation and surface roughness. The advantages offered by synchrotron radiation and the employed wavelength-dispersive detection setup were profited from. The GEXRF results retrieved were confirmed by complementary measurements. The experimental setup, the principles and advantages of GEXRF and the analysis of the recorded angular intensity profiles will be discussed in details.     

Probing structural changes of spin-coated polystyrene film after swelling and precipitation by synchrotron GIUSAXS and AFM

Polystyrene film of about 50 nm in thickness on silicon wafer was obtained by spin-coating in tetrahydrofuran solution. The film exhibits a rough surface as shown by atomic force microscopy images and ellipsometry data. Furthermore, such surface roughness produced a characteristic lateral correlation peak in an “out-ofplane” scan in the synchrotron grazing incidence ultra-small angle X-ray scattering pattern. The film was treated with liquids of solvent and non-solvent sequentially, resulting in a process of swelling and precipitation of the polystyrene film. Such a solvent/non-solvent treatment completely changed the original surface structure of the film. Aggregates of polystyrene of different sizes were observed both in atomic force microscopy and synchrotron grazing incidence ultra-small angle X-ray scattering measurements. The results demonstrate that synchrotron grazing incidence ultra-small angle X-ray scattering is a unique means to investigate large area micro-structural features of thin films supported on smooth surfaces.     

In Situ Study of the Surface Oxidation of FeCr Alloys Using Grazing Incidence X‐ray Absorption Spectroscopy (GIXAS)

The surface oxidation of FeCr alloys with 18, 28, and 43 mass‐% Cr was investigated in situ using grazing‐incidence X‐ray absorption spectroscopy (GIXAS) at the chromium and iron K‐edges. Oxidation in air was monitored in situ in the temperature range from 290 K to 680 K. The standard GIXAS data analysis is extended for the treatment of a single layer model in order to estimate the chromium concentrations of the oxide layer and of the near‐interface substrate as well as the oxide layer thickness. XANES analysis shows transitions from b.c.c. Fe to corundum type Fe₂O₃ and from b.c.c. Cr to corundum type Cr₂O₃. The initial oxide layers are 1.1‐1.4 nm thick and contain 60‐90 mass‐% chromium, while the near‐interface substrate is depleted in Cr. During heating, iron oxide growth dominates up to 560‐600 K. Then the chromium oxide layer loses its passivation effect and Cr oxidation sets in.     

Subnanometre depth resolution in sputter depth profiling of Si layers using grazing‐incident low‐energy O2+ and Ar+ ions

The sputter damage profiles of Si(100) by low‐energy O₂⁺ and Ar⁺ ion bombardment at various angles of incidence were measured using medium‐energy ion scattering spectroscopy. It was observed that the damaged Si surface layer can be minimized down to 0.5–0.6 nm with grazing‐incident 500 eV Ar⁺ and O₂⁺ ions at 80°. To illustrate how the damaged layer thickness can be decreased down to 0.5 nm, molecular dynamics simulations were used. The SIMS depth resolution estimated with trailing‐edge decay length for a Ga delta‐layer in Si with grazing‐incident 650 eV O₂⁺ was 0.9 nm, which is in good agreement with the measured damaged layer thickness. Copyright © 2004 John Wiley & Sons, Ltd.     

Application of Cr Kα X‐ray photoelectron spectroscopy system to overlayer thickness determination

A laboratory hard X‐ray photoelectron spectroscopy (HXPS) system at 5.4‐keV excitation energy was used to measure the angle dependence of a silicon oxide overlayer on a Si(0 0 1) substrate with overlayer thickness ranging from 4 to 25 nm. The thickness values of the SiO₂ overlayers were determined by utilizing a focused monochromatized Cr Kα source and a high‐energy hemispherical analyzer with an angle‐resolved wide acceptance angle objective lens. The modulation of the photoemission intensity due to photoelectron diffraction, which deteriorates high‐precision thickness determination, was suppressed significantly by continuous sample rotation around the sample's normal during the measurements. The resultant thickness values very well agree with those determined by ellipsometry in the same sample set. To demonstrate merits of the large information depth measurements, profiling of a wedged SiO₂ layer buried in a gate stack model structure with Ir (8 nm) and HfO₂ (2 nm) overlayers was performed. Copyright © 2011 John Wiley & Sons, Ltd.     

Comparative thickness measurements of SiO2/Si films for thicknesses less than 10 nm

We report on a comparative measurement of SiO₂/Si dielectric film thickness (t < 10 nm) using grazing‐incidence x‐ray photoelectron spectroscopy, neutron reflectometry and spectroscopic ellipsometry. Samples with nominal thicknesses of 3–7 nm were characterized by XPS with grazing‐incidence x‐rays at 1.8 keV, by cold neutron reflectometry (λ = 0.475 nm) and by spectroscopic ellipsometry over 1.5 eV < E < 6.0 eV. The results show good agreement between the ellipsometry and grazing‐incidence XPS, with slightly lower values for the neutron reflectometry. The role of surface contamination in each type of measurement is discussed. Published in 2004 by John Wiley & Sons, Ltd.     

XPS法测量铝箔表面氧化铝的厚度

介绍了一种无需溅射、无需变角，只需一次简单的ＸＰＳ（Ｘ射线光电子能谱）窄扫描，即可根据谱图中氧化态和金属态的相对强度算出铝金属表面氧化铝的厚度。用该法测量了一系列不同方法处理的铝表面氧比铝厚度，并与椭偏法及ＮＲＡ法（核反应分析法）测定结果进行了对比，结果表明，该法是一种简便准确的膜厚测量法。     

Grazing incidence x-ray diffraction analysis of zeolite NaA membranes on porous alumina tubes.

Zeolite NaA-type membranes hydrothermally synthesized on porous alumina tubes, for dehydration process, were characterized by grazing incidence 2 theta scan X-ray diffraction analysis (GIXRD). The fine structure of the membrane was studied fractionally for surface layer and for materials embedded in the porous alumina tube. The thickness of the surface layer on the porous alumina tube in the membranes used in this study was approximately 2-3 microm as determined from transmission electron microscopy with focused ion beam thin-layer specimen preparation technique (FIB-TEM). To discuss the effects of the membrane surface morphology on the GIXRD measurements, CaA-type membrane prepared by ion exchange from the NaA-type membrane and surface-damaged NaA-type membrane prepared by water leaching were also studied. For the original NaA-type membrane, 2 theta scan GIXRD patterns could be clearly measured at X-ray incidence angles (alpha) ranging from 0.1 to 2.0 deg in increments of 0.1 deg. The surface layers of the 2 - 3 microm on the porous alumina tube correspond to the alpha values up to ca. 0.2 deg. For the CaA-type and the surface-damaged NaA-type membranes, however, diffraction patterns from the surface layer could not be successfully detected and the others were somewhat broad. For all the three samples, diffraction intensities of both zeolite and alumina increased with depth (X-ray incidence angle, alpha) in the porous alumina tube region. The depth profile analysis of the membranes based on the GIXRD first revealed that amount of zeolite crystal embedded in the porous alumina tube is much larger than that in the surface layer. Thus, the 2 theta scan GIXRD is a useful method to study zeolite crystal growth mechanism around (both inside and outside) the porous alumina support during hydrothermal synthesis and to study water permeation behavior in the dehydration process.     

Spectroscopy and Structure of Sol-Gel Systems

Sol-gel derived glasses may differ from conventional melt-quenched glasses owing to the peculiar microstructures existing at the gel state, such that, even after gel densification, some differences may remain in their composition and molecular structure.This paper discusses structural characteristics of thin film oxide gels and glasses, with a special emphasis on SiO2-TiO2 based systems, which are of particular interest for sol-gel integrated optics applications. Short range structure aspects are discussed based on infrared, X-ray photoemission and X-ray photoabsorption spectroscopies. The chemical homogeneity of sol-gel materials is evaluated, based on X-ray photoemission and nuclear magnetic resonance spectroscopies, dealing in particular with the issue of homo- vs. heterocondensation. Finally, some microstructural features of sol-gel derived films are analyzed, namely the relationship between infrared absorption and porosity and the structure of nanocrystalline sol-gel films, based on grazing incidence X-ray diffraction and micro-Raman spectroscopy. The types of structural information obtainable by each different technique are compared in detail.     

Catalytic Etching of Platinoid Gauzes during the Oxidation of Ammonia by Air. Reconstruction of Surface of Platinoid Gauzes at 1133 K in Air,in Ammonia,and in an NH<Subscript>3</Subscript> + O<Subscript>2</Subscript> Reaction Medium

The structure, morphology, and chemical composition of the surface and near-surface layers of platinoid wires of polycrystalline gauzes, containing Pt (81 wt %), Pd (15 wt %), Rh (3.5 wt %), and Ru (0.5 wt %) after treatment at 1133 K in various media—in air, in ammonia, and after NH3 oxidation in air—are studied by X-ray diffraction (XRD), scanning electron microscopy (SEM), energy-dispersive X-ray (EDX) spectroscopy, and X-ray photoelectron spectroscopy (XPS). A thin film is found on the surface of the initial gauze containing an oxide layer of Rh₂O₃ with a thickness of ~2 nm, on the surface of which an inhomogeneous graphite-like layer 10–50 nm thick is located. It is shown that the heat treatment of gauzes in air leads to the partial removal of the surface graphite-like film that forms the reticulated structure on the wire surface. The treatment of gauzes in an ammonia atmosphere leads to the complete removal of the graphite-like and oxide layers and to the growth of metal grains of ~10 μm. After the catalytic reaction of NH3 oxidation, a deep structural rearrangement of the surface layer of the wire takes place, as a result of which crystalline metal agglomerates of ~10 μm are formed. It is supposed that the reaction of NH3 molecules with oxygen atoms penetrated on the defects leads to the local increase of temperature, due to which the metal atoms emerge on the surface and form large crystalline agglomerates and pores in the region of the grain boundaries.     

Influence of the substrate type on the microstructural,optical and electrical properties of sol–gel ITO films

Indium tin oxide (ITO) is recognized as the best transparent and conductive material [transparent conducting oxide (TCO)] until now and its properties are dependent on the preparation method. In the present work ITO films with In:Sn atomic ratio 9:1 were prepared by a sol–gel route on different substrates (microscope glass slides, microscope glass covered with one layer of SiO₂ and Si wafers) for TCO applications. The multilayer ITO films were obtained by successive deposition by the dip-coating method and the films were characterized from the structural, morphological, optical, and electrical points of view using X-ray diffraction, scanning electron microscopy, atomic force microscopy, spectroscopic ellipsometry and by Hall effect measurements, respectively. The results showed that the thickness, optical constants and carrier numbers depend strongly on the type of substrate, number of deposited layers and sol concentration. The optical properties of ITO films are closely related to their electrical properties. The enhancement of the conductivity was possible with the increase of crystallite size (which occurred after thermal treatment) and with the reduction of surface roughness.     

X‐ray diffraction study of low‐energy carbon‐ion implanted Si(001)

In the search for Si‐ and C‐based crystalline phases in low‐energy ion implanted and electron‐beam annealed Si surface layers, X‐ray diffraction (XRD) measurements were performed at grazing incidence on samples of large SiC nanocrystals grown on a 90 nm thick Si layer containing C atoms. Diffraction patterns and reciprocal space maps did not reveal XRD patterns originating from the nanocrystals or the implanted layer, but did show that distortions of the Si crystal structure were introduced into the implanted layer. After annealing, the strain in the implanted layer is reduced, possibly by carbon atoms that have moved to locations close to dislocations and dislocation loops. This investigation underpins the growth theory of the SiC nanocrystals on Si, with carbon atoms migrating to form the nanostructures. Copyright © 2007 John Wiley & Sons, Ltd.     

Quantum Characterization of Some Cluster-Based Materials

Three kinds of cluster-based materials are prepared by evaporation and inert gas condensation method. Their structures and properties are examined by transmission electron microscopy, Raman scattering, STM/STS, optical spectroscopy, etc. Some important results are obtained: (1) surface phonon modes of quasi-free Si clusters are observed when Si clusters softly land onto the mother skeleton of the porous silicon and/or through grazing angle collisions with the walls of the pores; (2) very sharp peaks of conductance resonances are obtained when the STM tip is right on the top of the Au cluster deposited on the H-terminated silicon crystal; and (3) large blue shifts and photoluminescence from violet to orange with main peaks in the blue range are observed from Ge cluster-based nanofilms at an excitation wavelength of 370 nm. Mechanisms are discussed including the quantum confinement effect of the Ge cluster cores, radiation transition from oxygen difficiency centers in the oxide surface layers, and exciton confinement in the interfacial layers between the crystalline cores and the oxide shells.     

Atomic and electronic structure of the surface of porous silicon layers

Atomic and electronic structure of the surface layers of porous silicon was studied by the methods of the near fine structure spectroscopy at the edge of X-ray absorption and ultrasoft X-ray emission spectroscopy. The thickness of the oxide layer and the degree of distortion of silicon-oxygen tetrahedra in this layer were estimated. The thickness of the surface oxide layer on the amorphous layer covering the nanocrystals of porous silicon that was kept during one year is several times greater than the thickness of the natural oxide in the single crystal silicon wafers. Distortion of the silicon-oxygen tetrahedron, the basic structural units of the silicon oxide, is accompanied by elongation of Si-O bonds and an increase in the Si-O-Si bond angles.     

Growth and characterization of ultrathin carbon films on electrodeposited Cu and Ni

Ultrathin carbon films were grown on different types of metallic substrates. Free‐standing foils of Cu and Ni were prepared by electroforming, and a pure Ni film was obtained by galvanic displacement on a Si wafer. Commercial foil of Ni 99.95% was used as a reference substrate. Carbon films were grown on these substrates by chemical vapour deposition in a CH₄‐H₂ atmosphere. Obtained films were characterized by Raman spectroscopy, X‐ray photoelectron spectroscopy (XPS), Auger electron spectroscopy, and ultraviolet photoemission spectroscopy. The XPS at grazing collection angle was used to determine the thickness of carbon films. Depending on the deposition parameters, the films of graphene or graphite were obtained on the different substrates. The uniformity of graphene and its distribution over the sample area were investigated from Raman data, optical images, and XPS chemical maps. The presence of graphene or graphite in the films was determined from the Raman spectra and Auger peak of C KVV. For this purpose, the D parameter, which is a fingerprint of carbon allotropes, was determined from C KVV spectra acquired by using X‐rays and electron beam. A formation of an intermediate layer of metal hydroxide was revealed in the samples with graphene overlayer.     

Review on the thickness measurement of ultrathin oxide films by mutual calibration method

Mutual calibration was suggested as a method to determine the absolute thickness of ultrathin oxide films. It was motivated from the large offset values in the reported thicknesses in the Consultative Committee for Amount of Substance (CCQM) pilot study P-38 for the thickness measurement of SiO₂ films on Si(100) and Si(111) substrates in 2004. Large offset values from 0.5 to 1.0 nm were reported in the thicknesses by ellipsometry, X-ray reflectometry (XRR), medium-energy ion scattering spectrometry (MEIS), Rutherford backscattering spectroscopy (RBS), nuclear reaction analysis (NRA), and transmission electron microscopy (TEM). However, the offset value for the thicknesses by X-ray photoelectron spectroscopy (XPS) was close to zero (−0.013 nm). From these results, the mutual calibration method was reported for the thickness measurement of SiO₂ films on Si(100) by combination of TEM and XPS. The mutual calibration method has been applied for the thickness measurements of hetero oxide films such as Al₂O₃ and HfO₂. Recently, the effect of surface contamination was reported to be critical to the thickness measurement of HfO₂ films by XPS. On the other hand, MEIS was proved to be a powerful zero offset method which is not affected by the surface contamination. As a result, the reference thicknesses in the CCQM pilot study P-190 for the thickness measurement of HfO₂ films on Si(100) substrate were determined by mutual calibration method from the average XRR data and MEIS analysis. Conclusively, the thicknesses of ultrathin oxide films can be traceably certified by mutual calibration method and most thickness measurement methods can be calibrated from the certified thicknesses.     

Review on grazing incidence X-ray spectrometry and reflectometry

Grazing incidence X-ray techniques are now widely used for surface and thin film analysis. The present article overviews the recent advancement since 1993 of the grazing incidence X-ray spectrometry and reflectometry in both theoretical and experimental aspects. Every current topic related to the total reflection X-ray fluorescence spectrometry (TXRF) is described in detail through the introduction of numerous published works on the application in the various fields of the science and industrial technologies. Recent rapid growth in diffuse scattering at grazing incidence as well as in specular reflection is another important scope. The combined measurements of different grazing incidence X-ray techniques might be a future trend for realizing further advanced analysis of the surface and interfaces of materials.     

XPS spectroscopic study of potentiostatic and galvanostatic oxidation of Pt electrodes in H2SO4 and HClO4

The surface oxides produced from potentiostatic and galvanostatic oxidation of Pt electrodes in HClO₄ and H₂SO₄ are examined using X-ray photoelectron spectroscopy. The oxide I species produced as the initial oxidation product by successively more anodic potentiostatic oxidation in 0.2 M HClO₄ is found to have a Pt²⁺ oxidation state, a binding energy characteristic of neither PtO, Pt(OH)₂ or PtO₂, and a limiting thickness of 8 Å. Galvanostatic oxidation in HClO₄ and H₂SO₄ is found to produce PtO₂·H₂O as an unlimiting growth oxide or a limiting growth oxide layer depending on the concentration of the acid electrolyte. The incorporation of the acid electrolyte anion in the surface layer is shown to have an effect on which type of oxide layer is produced. X-ray decomposition and chemical modification by Ar⁺ stripping are shown to produce chemical artifacts complicating any interpretation of a Pt oxide surface layer.     

X-Ray Analysis of Multi-Films for Electrochromic Device Application

Multilayer films based on tungsten oxide (WO₃), ITO (indium tin oxide) and CdS were deposited mainly by reactive dc magnetron sputtering onto glass substrates for electrochromic application. The thin films were analyzed by means of XPS (X-ray photoelectron spectroscopy), GIXD (grazing incidence X-ray diffraction) and XRD (X-ray diffraction). XRD and XPS results confirmed that the films were WO₃, CdS and ITO, respectively. The surface and interface of the CdS/ITO bi-layered film was studied by GIXD in different incidence angles. Detailed results about the amorphous characterization of the films during room temperature growth and post annealing are given.