Applications of total reflection X-ray fluorescence spectrometry in trace element and surface analysis

Total reflection X-ray fluorescence spectrometry (TXRF) is presented as a genuine surface analytical technique. Its low information depth is shown to be the characteristic feature differentiating it from other energy dispersive X-ray fluorescence methods used for layer and surface analysis. The surface sensitivity of TXRF and its analytical capability together with the limitations of the technique are discussed here using typical applications including the contamination control of silicon wafers, thin layer analysis and trace element determination. For buried interfaces and implantation depth profiles in silicon a combination of TXRF and other techniques has been applied successfully. The TXRF method has the particular advantage of being calibrated without the need for standards. This feature is demonstrated for the example of the element arsenic.     

Sapphire sample carriers for silicon determination by total-reflection X-ray fluorescence analysis

Sapphire is presented as a new sample carrier material for total-reflection X-ray fluorescence spectrometry (TXRF). A comparison with conventional sample carrier materials such as quartz glass, Perspex®, glassy carbon and boron nitride demonstrates that sapphire has all the physical and chemical properties required for TXRF micro and trace analysis. Moreover, sapphire sample carriers allow the determination of silicon in many matrices in a comparatively simple way. Especially for airborne particulate matter, acid digestion can be avoided by cool-plasma ashing of suitable filter materials directly on the sample carrier. This technique has been successfully applied to environmental samples.     

Application of vapor phase decomposition/total reflection X-ray fluorescence in the silicon semiconductor manufacturing environment

Total reflection X-ray fluorescence (TXRF), in combination with vapor phase decomposition (VPD), provides an efficient method for analyzing trace metal contaminants on silicon wafer surfaces. The progress made in applying these techniques to the analysis of silicon wafers in a wafer fabrication cleanroom environment is reported. Methods of standardization are presented, including the preparation and characterization of VPD standards. While the VPD wafer preparation process increases the sensitivity of the TXRF measurement by at least one order of magnitude, inherent uncertainties associated with the VPD technique itself are apparent. Correlation studies between VPD/TXRF and VPD/inductively coupled plasma mass spectrometry (ICP-MS) are presented.     

Method and mechanism of vapor phase treatment–total reflection X-ray fluorescence for trace element analysis on silicon wafer surface

Vapor phase treatment (VPT) is a pretreatment with hydrofluoric acid vapor to raise the sensitivity of total reflection X-ray fluorescence spectroscopy (TXRF) for trace metal analysis on silicon wafers. The International Organization for Standardization/Technical Committee 201/Working Group 2 (ISO/TC201/WG2) has been investigating the method to analyze 10⁹ atoms/cm² level of metallic contamination on the silicon wafer surface. Though VPT can enhance the TXRF signal intensity from the metallic contamination, it has turned out that the magnitude of the enhancement varies with the type of methods and the process conditions. In this study, approaches to increase TXRF intensity by VPT are investigated using a fuming chamber in an automated VPD instrument. Higher signal intensity can be obtained when condensation is formed on the sample surface in a humidifying atmosphere and with a decreasing stage temperature. Surface observations with SEM and AFM show that particles with ~ 4 μm in diameter are formed and unexpectedly they are dented from the top surface level.     

Improvement of total reflection X-ray fluorescence analysis of low Z elements on silicon wafer surfaces at the PTB monochromator beamline for undulator radiation at the electron storage ring BESSY II

Several different total reflection X-ray fluorescence (TXRF) experiments were conducted at the plane grating monochromator beamline for undulator radiation of the Physikalisch-Technische Bundesanstalt (PTB) at the electron storage ring BESSY II, which provides photon energies between 0.1 and 1.9 keV for specimen excitation. The lower limits of detection of TXRF analysis were investigated for some low Z elements such as C, N, O, Al, Mg and Na in two different detection geometries for various excitation modes. Compared to ordinary XRF geometries involving large incident angles, the background contributions in TXRF are drastically reduced by the total reflection of the incident beam at the polished surface of a flat specimen carrier such as a silicon wafer. For the sake of an application-oriented TXRF approach, droplet samples on Si wafer surfaces were prepared by Wacker Siltronic and investigated in the TXRF irradiation chamber of the Atominstitut and the ultra-high vacuum TXRF irradiation chamber of the PTB. In the latter, thin C layer depositions on Si wafers were also studied.     

Small-angle X-ray scattering studies of Nafion®/[silicon oxide] and Nafion®/ORMOSIL nanocomposites

The small angle X-ray scattering technique was used to probe structural heterogeneity on the scale of nanometers within Nafion®/[silicon oxide], Nafion®/[ORMOSIL], and Nafion®/[dimethylsiloxane] hybrid membranes. The results of this study reinforced the working hypothesis of morphological template action for the in situ growth of silicon oxide, or organically modified silicon oxide phases in perfluorosulfonate ionomers via sol-gel reactions for silicon alkoxide or/and silicon alkylalkoxide precursors. Nanophase separation persists when incorporated silicon oxide particles are postreacted with ethoxytrimethylsilane but postreaction with diethoxydimethylsilane generates co-continuous phases that do not generate ionomer SAXS peaks, presumably due to a more homogeneous Si atom distribution within the ionomer. These hybrids are true nanocomposites, as structural heterogeneity exists on the scale of ∼ 5 nm. The variation of the small angle upturn for these hybrids is explained in terms of long-range inhomogeneities in ionomers. © 1996 John Wiley & Sons, Inc.     

Some aspects of the high-temperature behavior of bismuth,strontium and barium on silicon surfaces studied by total reflection X-ray fluorescence spectrometry

Thin films of novel dielectric and ferroelectric materials, such as barium strontium titanate (BST) and strontium bismuth tantalate (SBT), which are scheduled for short-term implementation into standard microelectronic device technology, contain elements like Bi, Sr and Ba which may involve risks with regard to device yield and reliability. Therefore, the high-temperature behavior of bismuth, strontium and barium impurities on Si (100) substrates was studied. Intentionally contaminated Si substrates were annealed at 1000°C under different ambient (inert, oxidizing) by rapid thermal annealing (RTA) or in a furnace and analyzed by total reflection X-ray fluorescence spectrometry (TXRF), vapor phase decomposition/TXRF (VPD/TXRF) and electrolytic metal tracer (Elymat) technique. Ba and Sr are incorporated in the existing or growing oxide during rapid thermal annealing (RTA). Cross-contamination due to gas phase transport may occur in the case of Bi, in particular under N₂ atmosphere, but is of no concern in the case of Ba and Sr. All three contaminants do not exert an influence on the minority carrier lifetime on their own. The results illustrate that TXRF and VPD/TXRF are appropriate techniques for such studies.     

A formula for the background in TXRF as a function of the incidence angle and substrate material

A simple formula has been developed that allows the calculation of the background contributed by the substrate in TXRF both exactly and in absolute terms. The scattered X-radiation from any surface is described as a function of the incidence angle and of the X-ray cross sections for scattering and total absorption of the substrate material. The formula has been confirmed experimentally for silicon, acryl and gold. Measured and calculated values agree within reasonable limits. The deviations between predicted and measured data decrease with increasing angle of incidence from up to 20% in the low angle regime down to a few percent beyond the critical angle of total reflection as a result of the decreasing influence of surface roughness.     

Band distortions and inversions in FTIR spectra of silicon dioxide on silicon

We report the FTIR spectra as a function of incident angle and polarization of a 307 Å layer of silicon dioxide on silicon substrate. Bands normally obscured in transmission spectra are revealed and can dominate the reflection spectra at incident angles away from normal. Strong band distortions were observed as the incident angle and polarization were varied. Our experimental results are in excellent agreement with calculations based on published optical constants. Thus, quantitative interpretations of IR spectra of silicon dioxide on silicon should be made with caution.     

Calibration of reference materials for total-reflection X-ray fluorescence analysis by heavy ion backscattering spectrometry

Total-reflection X-ray fluorescence (TXRF) is widely used for the control of metallic contamination caused by surface preparation processes and silicon materials. At least three companies supply a variety of TXRF systems to the silicon integrated circuit (IC) community, and local calibration of these systems is required for their day to day operation. Differences in local calibration methods have become an issue in the exchange of information between IC manufacturers' different FABs (Fabrication Facility) and also between silicon suppliers and IC FABs. The question arises whether a universal set of fluorescence yield curves can be used by these different systems to scale system sensitivity from a single element calibration for calculation of elemental concentrations. This is emphasized by the variety of experimental conditions that are reported for TXRF data (e.g. different angles of incidence for the same X-ray source, different X-ray sources, etc.). It appears that an instrumental factor is required. We believe that heavy ion backscattering spectrometry (HIBS) provides a fundamental method of calibrating TXRF reference materials, and can be used in calculating this instrumental factor. In this paper we briefly describe the HIBS system at the Sandia National Laboratories HIBS User Facility and its application to the calibration of TXRF reference materials. We will compare HIBS and TXRF mapping capabilities and discuss the issues associated with the restrictions of some older TXRF sample stages. We will also discuss Motorola's cross-calibration of several TXRF systems using different elements as references.     

Application of ETV-ICPMS in semiconductor process control

Submicron semiconductor manufacturing requires ultra-clean processes and materials to achieve high product yields. It is demonstrated that electrothermal evaporation (ETV) in a graphite furnace coupled with ICPMS offers a new possibility for a fast simultaneous analysis of eight elements with detection limits below 0.2 ng/g in conc. hydrofluoric acid and buffered oxide etch (ammonium fluoride/hydrogen fluoride mixture). ETV-ICPMS also comprises significant improvements in the analysis of metal contamination on silicon wafer surfaces with respect to currently used methods. The contaminants on the surface are usually analyzed by total reflexion X-ray fluorescence spectrometry (TXRF) or dissolved by HF vapour (vapour phase decomposition; VPD) or a mixture of hydrofluoric acid and hydrogen peroxide (droplet surface etching, DSE) and analyzed by GFAA or TXRF. ETV-ICPMS combines the advantages of both analytical methods: the multielemental advantage of TXRF and the possibility to analyze light elements like Al, Mg, Na which may not be analyzed by TXRF. With VPD/DSE-ETV-ICPMS detection limits between 0.2 and 2×10⁹ atoms cm^?2 on a 6″ wafer have been achieved in a simultaneous analysis of eight elements. The main advantage of ETV-ICPMS versus conventional ICPMS in both applications — chemical and surface analysis — is its capability to analyze Fe in the sub-ng/g range. As Fe is one of the most important impurities in semiconductor manufacturing ETV-ICPMS is much more useful for semiconductor applications than low-resolution ICPMS. For the present application potassium iodide was used as a modifier. It enhances the sensitivity by a factor of 3–4 and improves the reproducibility significantly.     

Room-temperature ferromagnetism in silicon oxide/silicon nitride composite films

Room-temperature ferromagnetism has been observed in silicon oxide/silicon nitride composite films formed on Si substrates at different substrate temperatures, and the ferromagnetic properties of the samples have been found to depend on the silicon nitride content of the films. It is proposed that the ferromagnetism is related to the interface states between the silicon oxide particles and silicon nitride particles. The saturation magnetization (M_S) reached its maximum value in the film produced at a substrate temperature of 400 °C. A further study on the magnetic properties of the film has been carried out using first-principles calculations based on the density functional theory. The calculations suggest that the magnetic moments of the film originate from N 2p and Si 2p states in the vicinity of the hetoro-interface.     

Engineering silicon oxide surfaces using self-assembled monolayers

Although a molecular monolayer is only a few nanometers thick it can completely change the properties of a surface. Molecular monolayers can be readily prepared using the Langmuir-Blodgett methodology or by chemisorption on metal and oxide surfaces. This Review focuses on the use of chemisorbed self-assembled monolayers (SAMs) as a platform for the functionalization of silicon oxide surfaces. The controlled organization of molecules and molecular assemblies on silicon oxide will have a prominent place in "bottom-up" nanofabrication, which could revolutionize fields such as nanoelectronics and biotechnology in the near future. In recent years, self-assembled monolayers on silicon oxide have reached a high level of sophistication and have been combined with various lithographic patterning methods to develop new nanofabrication protocols and biological arrays. Nanoscale control over surface properties is of paramount importance to advance from 2D patterning to 3D fabrication.     

Role of poly(diallyldimethylammonium chloride) in selective polishing of polysilicon over silicon dioxide and silicon nitride films

A cationic polymer, poly(diallyldimethylammonium chloride), or PDADMAC (MW ≈ 200,000), at a concentration of 250 ppm was used to enhance polysilicon removal rates (RRs) to ～600 nm/min while simultaneously suppressing both silicon dioxide and silicon nitride RRs to <1 nm/min, both in the absence or in the presence of ceria or silica abrasives during chemical mechanical polishing (CMP). These results suggest that aqueous abrasive-free solutions of PDADMAC are very attractive candidates for several front-end-of-line (FEOL) CMP processes. Possible mechanisms for the enhancement of poly-Si RR and the suppression of oxide and nitride RRs are proposed on the basis of the RRs, contact angle data on poly-Si films, zeta potentials of polishing pads, polysilicon films, silicon nitride particles, and silica and ceria abrasives, thermogravimetric analysis, and UV-vis spectroscopy data.     

Covalent attachment of organic monolayers to silicon carbide surfaces

This work presents the first alkyl monolayers covalently bound on HF-treated silicon carbide surfaces (SiC) through thermal reaction with 1-alkenes. Treatment of SiC with diluted aqueous HF solutions removes the native oxide layer (SiO2) and provides a reactive hydroxyl-covered surface. Very hydrophobic methyl-terminated surfaces (water contact angle theta = 107 degrees ) are obtained on flat SiC, whereas attachment of omega-functionalized 1-alkenes also yields well-defined functionalized surfaces. Infrared reflection absorption spectroscopy, ellipsometry, and X-ray photoelectron spectroscopy measurements are used to characterize the monolayers and show their covalent attachment. The resulting surfaces are shown to be extremely stable under harsh acidic conditions (e.g., no change in theta after 4 h in 2 M HCl at 90 degrees C), while their stability in alkaline conditions (pH = 11, 60 degrees C) also supersedes that of analogous monolayers such as those on Au, Si, and SiO2. These results are very promising for applications involving functionalized silicon carbide.     

Simultaneous determination of phosphorus. arsenic and germanium and the separation of silicon and arsenic by solvent extraction

A simple, rapid, accurate and reliable method for the simultaneous determination of phosphorus, arsenic and germanium as their heteropoly blue complexes is reported. The method involves selective extraction of phosphomolybdic acid at pH 1.0-0.8, and selective extraction of germanomolybdic acid by isooctyl alcohol at pH 0.4, followed by back-extraction of the germanomolybdic acid with water, and reduction of arsenomolybdic acid in the remaining aqueous phase. A rapid and reliable method is also reported for the simultaneous determination of arsenic and silicon by selective extraction of silicomolybdic acid with isooctyl alcohol at pH < 0.4 and the back-extraction of the silicomolybdic acid with water; arsenic is determined in the remaining aqueous phase. The procedure can be applied to the simultaneous determination of phosphorus, arsenic and silicon.     

Vapor phase decomposition–droplet collection–total reflection X-ray fluorescence spectrometry for metallic contamination analysis on Ge wafers

Ge substrates are recently being reconsidered as a candidate material for the replacement of Si substrates in advanced semiconductor devices. The reintroduction of this material requires reengineering of the standard IC processing steps. In this paper, we present the extension of the methodology of vapor phase decomposition–droplet collection–total reflection X-ray fluorescence spectrometry (VPD–DC–TXRF) for metallic contamination analysis towards Ge substrates. A first step that asked for adaptation was the collection chemistry as the Ge wafers surface is not hydrophobic after the VPD treatment. The contact angle could be significantly increased using a concentrated HCl solution. This chemistry has been proved to perform well in the collection of metals from intentionally contaminated Ge wafers. A second step that needed optimization was the matrix removal method as a sample preparation step prior to the TXRF analysis. First, the upper limits of TXRF on Ge containing solutions have been characterized. The accuracy of TXRF is found to be acceptable for Ge contents lower than 1×10¹⁴ atoms (250 ppb in 50 μL) but decreases systematically with higher Ge contents. Fortunately, Ge can be volatilized at low temperatures as GeCl₄ by the addition of HCl. The parameters within this method have been investigated with respect to the removal of Ge and the recovery of metal traces. Finally, the full VPD–DC–TXRF method has been applied on intentionally contaminated Ge wafers and proved to be very accurate.     

Trace analysis for 300 mm wafers and processes with total reflection X-ray fluorescence

Total reflection X-ray fluorescence (TXRF) is essential for 300-mm silicon wafer production and fabrication of semiconductor devices. The 300-mm TXRF enables non-destructive contamination analysis on wafers for process development and process control. The TXRF system shows a very stable continuous operation, which allows accurate trace and ultra trace analysis on the silicon surface. It is equipped with two excitation sources covering the requirements of very sensitive measurement and wide element range. The TXRF is a key technology for contamination control during wafer reclaim. For this purpose we show that the system is able to examine the wafers during different processing states of reclaim. The system sensitivity is influenced by the surface of the wafer. For important processing steps, e.g. double side polishing, the sensitivity is as good as for measurements on hazefree polished wafers. We show with TXRF that cross-contamination with copper during double side polishing is suppressed.     

Preparation of superhydrophobic silicon oxide nanowire surfaces

The paper reports on the preparation of superhydrophobic amorphous silicon oxide nanowires (a-SiONWs) on silicon substrates with a contact angle greater than 150 degrees by means of surface roughness and self-assembly. Nanowires with an average mean diameter in the range 20-150 nm and 15-20 microm in length were obtained by the so-called solid-liquid-solid (SLS) technique. The porous nature and the high roughness of the resulting surfaces were confirmed by AFM imaging. The superhydrophobicity resulted from the combined effects of surface roughness and chemical modification with fluorodecyl trichlorosilane.     

Depth profiles of arsenic in semiconductor silicon by chemical etching and non-dispersive atomic fluorescence spectrometry with hydride generation

An improved non-dispersive atomic fluorescence spectrometric determination of arsenic by sodium tetrahydroborate reduction is described. A new burner on which a small argon-hydrogen-entrained air flame can be maintained at a low hydrogen flow rate (0.15 1 min^-1) is reported. The detection limit ($\text{S}\text{N}$ = 2) is 10 pg of arsenic, and the analytical working curve is linear over four decades of concentration from the detection limit. The system is applied to depth profiling of arsenic in silicon slices. The silicon is anodized, the silica film is removed by hydrofluoric acid and the arsenic in the etching solution determined. The depth of silicon removed is measured by determining the silicon content in the etching solution by inductively-coupled plasma atomic emission spectrometry. The method permits determinations of ?10¹⁸ atoms As cm^-3 in 30-nm sections of a silicon slice with a diameter of 5.1 cm.