Spacer layer thickness fluctuation scattering in a modulation-doped AlxGa1-xAs/GaAs/AlxGa1-xAs quantum well

We theoretically study the influence of spacer layer thickness fluctuation（SLTF） on the mobility of a twodimensional electron gas（2DEG） in the modulation-doped Al x Ga 1 x As/GaAs/Al x Ga 1 x As quantum well.The dependence of the mobility limited by SLTF scattering on spacer layer thickness and donor density are obtained.The results show that SLTF scattering is an important scattering mechanism for the quantum well structure with a thick well layer.     

Breakdown voltage analysis of Al_0.25Ga_0.75N/GaN high electron mobility transistors with partial silicon doping in the AlGaN layer

In this paper,two-dimensional electron gas(2DEG) regions in AlGaN/GaN high electron mobility transistors(HEMTs) are realized by doping partial silicon into the AlGaN layer for the first time.A new electric field peak is introduced along the interface between the AlGaN and GaN buffer by the electric field modulation effect due to partial silicon positive charge.The high electric field near the gate for the complete silicon doping structure is effectively decreased,which makes the surface electric field uniform.The high electric field peak near the drain results from the potential difference between the surface and the depletion regions.Simulated breakdown curves that are the same as the test results are obtained for the first time by introducing an acceptor-like trap into the N-type GaN buffer.The proposed structure with partial silicon doping is better than the structure with complete silicon doping and conventional structures with the electric field plate near the drain.The breakdown voltage is improved from 296 V for the conventional structure to 400 V for the proposed one resulting from the uniform surface electric field.     

Electron mobility for a model Al<Subscript>x</Subscript> Ga<Subscript>1-x</Subscript> As/GaAs heterojunction under pressure

A variational method and a memory function approach are adopted to investigate the electron mobility parallel to the interface for a model Al_xGa_1-xAs/GaAs heterojunction and its pressure effect by considering optical phonon modes (including both of the bulk longitudinal optical (LO) in the channel side and interface optical (IO) phonons). The influence of a realistic interface heterojunction potential with a finite barrier and conduction band bending are taken into account. The properties of electron mobility versus Al concentration, electronic density and pressure are given and discussed, respectively. The results show that the electron mobility increases with Al concentration and electronic density, whereas decreases with pressure from 0 to 40 kbar obviously. The Al concentration dependent and the electron density dependent contributions to the electron mobility from the scattering of IO phonons under pressure becomes more obvious. The variation of electron mobility with the Al concentration and electron density are dominated by the properties of IO and LO phonons, respectively. The effect of IO phonon modes can not be neglected especially for higher pressure and electronic density.     

AlN插入层对AlxGa1-xN/GaN界面电子散射的影响

本文研究AlN作为Al_xGa_1-xN/GaN插入层引起的电子输运性质的变化, 考虑了Al_xGa_1-xN和AlN势垒层的自发极化、压电极化对Al_xGa_1-xN/AlN/GaN双异质结高电子迁移率晶体管(HEMT)中极化电荷面密度、二维电子气(2DEG) 浓度的影响, 分析了AlN厚度与界面粗糙度散射和合金无序散射的关系; 结果表明, 2DEG 浓度、界面粗糙度散射和合金无序散射依赖于AlN层厚度, 插入一层1–3 nm薄的AlN层, 可以明显提高电子迁移率.     

Rashba effect in Ga<Subscript>x</Subscript>In<Subscript>1-x</Subscript>As/InP quantum wire structures

An overview is given on the Rashba effect in Ga_xIn_1-xAs/InP quantum wires. First, the effect of Rashba spin–orbit coupling on the energy level spectrum of quantum wires with different shapes of the confining potential is theoretically investigated. The wave functions as well as the spin densities in the quantum wire are analyzed for different magnetic fields. It is found that, owing to the additional geometrical confinement, a modification of the characteristic beating pattern in the magnetoresistance can be expected. The theoretical findings are compared to measurements on two different types of wires: First, single wires and, second, sets of parallel wires. A characteristic beating pattern in the Shubnikov–de Haas oscillations is observed for wires with an effective width down to approximately 400 nm. The beating pattern is significantly better resolved for the samples with sets of parallel wires, owing to the effective suppression of conductance fluctuations. A comparison with theoretical simulations confirms that the strength of the Rashba effect is basically not affected by the geometrical confinement of the wires. However, for wires with a very small effective width the strong carrier confinement leads to a suppression of the characteristic beating pattern in the Shubnikov–de Haas oscillations. PACS 71.70.Ej; 73.63.-b; 71.70.Di     

Influence of a two-dimensional electron gas on current-voltage characteristics of Al_0.3Ga_0.7 N/GaN high electron mobility transistors

The J-V characteristics of AltGa1 tN/GaN high electron mobility transistors(HEMTs) are investigated and simulated using the self-consistent solution of the Schro¨dinger and Poisson equations for a two-dimensional electron gas(2DEG) in a triangular potential well with the Al mole fraction t = 0.3 as an example.Using a simple analytical model,the electronic drift velocity in a 2DEG channel is obtained.It is found that the current density through the 2DEG channel is on the order of 1013 A/m2 within a very narrow region(about 5 nm).For a current density of 7 × 1013 A/m2 passing through the 2DEG channel with a 2DEG density of above 1.2 × 1017 m-2 under a drain voltage Vds = 1.5 V at room temperature,the barrier thickness Lb should be more than 10 nm and the gate bias must be higher than 2 V.     

Effect of interdiffusion of In and Al atoms on excitonic states in In<Subscript>x</Subscript>Ga<Subscript>1−x</Subscript>As/Al<Subscript>y</Subscript>Ga<Subscript>1−y</Subscript>As quantum dots

The effect of interdiffusion of aluminum and indium atoms on the exciton emission energy and binding energy in In_xGa_1?xAs/Al_yGa_1?yAs quantum dots is studied. It is shown that the emission energy increases monotonically with increasing diffusion length, while the binding energy has a maximum.     

Contactless gating,surface charging and illumination effects in a buried Al<Subscript>0.24</Subscript>Ga<Subscript>0.76</Subscript>As/GaAs quantum well structure

The conductivity of an Al_0.24Ga_0.76As/GaAs quantum well was studied as a function of the surface charge generated by electron bombardment of the sample in the absence of an externally applied surface electric field. Under a suitable rate of electron irradiation, it was possible to completely shut off the conductive channel, implying a surface density . Light illumination quenches the increase of the resistivity, apparently due to photoemission from the metastable surface states. Upon turning off the electron bombardment the surface charge on adsorbed layers of xenon and water at 8 K decays in room temperature darkness with a lifetime τ= 0.30 ±0.02 s. The average charging efficiency, is μ₀ ≃0.001. Surface charging is shown to be an effective method for contactless gating of field effect devices.     

Energy spectra of exciton states in disk-shaped GaAs-Ga<Subscript>1-x</Subscript>Al<Subscript>x</Subscript>As quantum dots under growth-direction magnetic fields

A theoretical study, within the effective-mass approximation, of the effects of applied magnetic fields on excitons in disk-shaped GaAs-Ga_1-xAl_xAs quantum dots is presented. Magnetic fields are applied in the growth direction of the semiconductor heterostructure. The parity of the excitonic envelope function related to the simultaneous exchange of z_e→-z_e and z_h→-z_h is a good quantum number and the wave function, both the odd and even parity, can be expanded as combination of products of the quantum well electron and hole function that preserves the parity with appropriate Gaussian functions. We have simultaneously obtained the energies of the excitonic ground and excited states and discuss the behavior of these energies as a function of the magnetic field.     

Prediction of Γ-L and L-X crossovers in Ga<Subscript>x</Subscript>Al<Subscript>1-x</Subscript>Sb alloys by empirical pseudopotential method

Using empirical pseudopotential method Γ-L crossover is found for the Ga_0.74Al_0.26Sb. The conduction band minimum is observed to switch at the (0.87, 0, 0) point for Ga_0.51Al_0.49Sb which shifts to the X point for Ga_0.21Al_0.79Sb and remains at X leading finally to indirect band gap in AlSb. Band structure calculations for a large number of alloys are performed and bowing parameters b_X and b_L are proposed for the E_X and E_L respectively. Our findings may serve as directive to select the materials in a range of composition to examine the bowing parameters and thereby effective mass experimentally for the Ga_xAl_1-xSb alloys.     

Temperature and electric field dependences of the mobility of electrons in vertical transport in GaAs/Ga<Subscript>1−<Emphasis Type="Italic">y</Emphasis></Subscript>Al<Subscript><Emphasis Type="Italic">y</Emphasis></Subscript>As barrier structures containing quantum wells

The mobility of electrons in vertical transport in GaAs/Ga_1−y Al _y As barrier structures was investigated using geometric magnetoresistance measurements in the dark. The samples studied had Ga_1−y Al _y As (0 ≤ y ≤ 0:26) linearly graded barriers between the n⁺-GaAs contacts and the Ga_0:74Al_0:26As central barrier, which contain N _w (=0, 2, 4, 7 and 10) n-doped GaAs quantum wells. The mobility was determined as functions of (i) temperature (80–290 K) at low applied voltage (0.01–0.1 V) and (ii) applied voltage (0.005–1.6 V) at selected temperatures in the range 3.5–290 K. The experimental results for the temperature dependence of low-field mobility suggest that space-charge scattering is dominant in the samples with N _w =0 and 2, whereas ionized impurity scattering is dominant in the samples with N _w =4, 7 and 10. The effect of polar optical phonon scattering on the mobility becomes significant in all barrier structures at temperatures above about 200 K. The difference between the measured mobility and the calculated total mobility in the samples with N _w =4, 7 and 10, observed above 200 K, is attributed to the reflection of electrons from well-barrier interfaces in the quantum wells and interface roughness scattering. The rapid decrease of mobility with applied voltage at high voltages is explained by intervalley scattering of hot electrons.      

Tunneling time correction to the intersubband optical absorption in a THz laser-dressed GaAs/Al<Subscript><Emphasis Type="Italic">x</Emphasis></Subscript>Ga<Subscript>1-</Subscript><Subscript><Emphasis Type="Italic">x</Emphasis></Subscript>As quantum well

Tunneling effect on the intersubband optical absorption in a GaAs/Al _x Ga_{1- x} As quantum well under simultaneous presence of intense non-resonant laser and static electric fields is theoretically investigated. Based on the shooting method the quasi-stationary energy levels and their corresponding linewidths are obtained. By considering the joint action of the two external fields the linear absorption coefficient is calculated by means of Fermi’s golden rule and taking into account the intersubband relaxation. We found that: (i) the linewidth broadening due to the electron tunneling has an appreciable effect on the absorption spectrum; (ii) a constant relaxation time adopted in the previous studies could not be justified even for moderate electric fields, especially in the laser dressed wells. Our model predicts that the number of absorption peaks can be controlled by the external applied fields. While in the high-electric fields the excited states become unbounded due to a significant tunneling of the electrons, for high laser intensities and low/moderate electric fields the absorption spectrum has a richer structure due to the laser-generated resonant states. The possibility of tuning the resonant absorption energies by using the combined effects of the static electric field and the THz coherent radiation field can be useful in designing new optoelectronic devices.     

Electron mobility limited by surface and interface roughness scattering in AlxGa1-xN/GaN quantum wells

The electron mobility limited by the interface and surface roughness scatterings of the two-dimensional electron gas in AlxGa1-xN/GaN quantum wells is studied. The newly proposed surface roughness scattering in the AlGaN/GaN quantum wells becomes effective when an electric field exists in the AlxGa1-xN barrier. For the AlGaN/GaN potential well, the ground subband energy is governed by the spontaneous and the piezoelectric polarization fields which are determined by the barrier and the well thicknesses. The thickness fluctuation of the AlGaN barrier and the GaN well due to the roughnesses cause the local fluctuation of the ground subband energy, which will reduce the 2DEG mobility.     

Light hole transport in a strained GaAs/In0.18Ga0.82As quantum well at high pressures

Abstract

Here we report what we believe to be the first observation of the pressure dependence of the light hole behavior in a modulation doped In_0.18Ga_0.82As/GaAs single strained quantum well grown by MBE. Transport measurements have been undertaken as a function of temperature (4–300K) and hydrostatic pressure (4–8kbar). Hole mobilities of ～17000 cm²/Vs have been obtained for sheet carrier densities of ～3.3×10¹¹ cm^?2. At low temperatures (<100K) persistent photogenerated holes have been observed. The hole mobility is found to decrease with increasing pressure at a rate intermediate between that typically observed for holes and electrons in bulk III-V semiconductors.     

Diamagnetic susceptibility of hydrogenic donor impurity in a V-groove GaAs/Ga<Subscript>1-</Subscript><Subscript><Emphasis Type="Italic">x</Emphasis></Subscript>Al<Subscript><Emphasis Type="Italic">x</Emphasis></Subscript>As quantum wire

In this work, the diamagnetic susceptibility and the bindingenergy of a hydrogenic donor impurity both in the parabolic andnon-parabolic conduction band models have been calculated withinthe effective mass approximation for a V-grooveGaAs/Ga_{1- x} Al _x As quantum wire. According to the resultsobtained from the present work reveals that (i) the value ofdiamagnetic susceptibility due to the non-parabolicity effect ishigher than that of parabolicity effect; (ii) the values ofdiamagnetic susceptibility and binding energy due to thenon-parabolicity effect is not appreciable at low Al molefractions; (iii) the diamagnetic susceptibility approaches to thebulk value both in L \(\rightarrow\) 0 or L \(\rightarrow\) ∞; (iv)the effect of non-parabolocity is not appreciable in the bindingenergy and energy dependent effective mass, for energies lowerthan 50 MeV.     

A schematic model of intersubband electron-electron interactions within a heavily doped Al<Subscript>x</Subscript>Ga<Subscript>1−<Emphasis Type="Italic">x</Emphasis></Subscript>As(Si)/GaAs heterojunction

In this work, the results of studying the electron-electron relaxation processes in a highly degenerate 2D-electron system with a fine structure of energy spectrum and spatial distribution of electron density are reported. The relations for the intra-and intersubband electron-electron interaction times are found and the matrix elements of a total screening potential and a dielectric function are determined in the approximation far from the long-wave limit for a heavily doped heterojunction, where two subbands of dimensional quantization are filled. It is shown that oscillations of the temperature and concentration dependences of the electron-electron interaction time are due to excitation of plasma oscillations of the 2D-electron system components. __________ Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 1, pp. 45–51, January, 2008.     

Effect of strain on multisubband electron transport in GaAs/InxGa1-xAs coupled quantum well structures

We analyze the strain induced changes in the low temperature multisubband electron mobility mediated through the intersubband interactions in a pseudomorphic GaAs/In_xGa_1−xAs coupled double quantum well structure. We consider the non-phonon scattering mechanisms and study the effect of strain on them. We show that strain reduces the mobility due to ionized impurity (imp-) scattering μ^imp but enhances the mobility due to interface roughness (IR-) scattering μ^IR. For alloy disorder (AL-) scattering as long as the lowest subband is occupied, the effect of strain enhances the mobility μ^AL. However, once the second subband is occupied, there is almost no change, rather decrease in μ^AL for larger well widths. It is gratifying to note that for single subband occupancy, the effect of strain enhances the total mobility μ. On the other hand, for double subband occupancy, initially there is almost no change, but with increase in well width the total mobility reduces. We vary the In composition x from 0.15 to 0.2 and 0.25 and the barrier width between the two wells to analyze their effects on the mobility which shows interesting results. Our study of multisubband mobility can be utilized for the low temperature device applications.     

Low temperature electron mobility in Ga0.5In0.5P/GaAs quantum well structures

We analyse the low temperature subband electron mobility in a Ga_0.5In_0.5P/GaAs quantum well structure where the side barriers are delta-doped with layers of Si. The electrons are transferred from both the sides into the well forming two dimensional electron gas (2DEG). We consider the interface roughness scattering in addition to ionised impurity scattering. The effect of screening of the scattering potentials by 2DEG on the electron mobility is analysed by changing well width. Although the ionized impurity scattering is a dominant mechanism, for small well width the interface roughness scattering happens to be appreciable. Our analysis can be utilized for low temperature device applications.      

One‐phonon resonant electron Raman scattering in a cylindrical GaAs/AlAs quantum dot

We have presented a theoretical calculation of the differential cross section for the electron Raman scattering process associated with the interface optical phonon modes in cylindrical GaAs quantum dots (QDs) with a AlAs matrix. We consider the Fröhlich electron–phonon interaction in the framework of the dielectric continuum approach. The selection rules for the processes are studied. Singularities are found to be sensitively size‐dependent, and, by varying the size of the QDs, it is possible to control the frequency shift in the Raman spectra. A discussion of the phonon behavior for QDs with different size is presented. Copyright © 2013 John Wiley & Sons, Ltd.     

Quantum Monte Carlo simulation of exciton–exciton scattering in a GaAs/AlGaAs quantum well

We present a computer simulation of exciton–exciton scattering in a quantum well. Specifically, we use quantum Monte Carlo techniques to study the bound and continuum states of two excitons in a 10 nm wide GaAs/Al_0.3Ga_0.7As quantum well. From these bound and continuum states we extract the momentum-dependent phase shifts for s-wave scattering. A surprising finding of this work is that a commonly studied effective-mass model for excitons in a 10 nm quantum well actually supports two bound biexciton states. The second, weakly bound state may dramatically enhance exciton–exciton interactions. We also fit our results to a hard-disk model and indicate directions for future work.