Synthesis of boron nitride nanostructures from catalyst of iron compounds via thermal chemical vapor deposition technique

For the first time, patterned growth of boron nitride nanostructures (BNNs) is achieved by thermal chemical vapor deposition (TCVD) technique at 1150 °C using a mixture of FeS/Fe₂O₃ catalyst supported in alumina nanostructured, boron amorphous and ammonia (NH₃) as reagent gas. This innovative catalyst was synthesized in our laboratory and systematically characterized. The materials were characterized by X-ray diffraction (XRD), Raman spectroscopy, Fourier-transform infrared spectroscopy (FTIR), Thermogravimetric analysis (TGA), Scanning Electron Microscopy (SEM) and Transmission Electron Microscopy (TEM). The X-ray diffraction profile of the synthesized catalyst indicates the coexistence of three different crystal structures showing the presence of a cubic structure of iron oxide and iron sulfide besides the gamma alumina (γ) phase. The results show that boron nitride bamboo-like nanotubes (BNNTs) and hexagonal boron nitride (h-BN) nanosheets were successfully synthesized. Furthermore, the important contribution of this work is the manufacture of BNNs from FeS/Fe₂O₃ mixture.     

Synthesis and characterization of GaN nanowires by a catalyst assisted chemical vapor deposition

GaN nanowires have been fabricated on Si(1 1 1) substrates by chemical vapor deposition (CVD) method with NiCl₂ as catalyst and their compositions, microstructures, morphologies and light emitting properties were characterized by X-ray diffraction (XRD), FT-IR spectrophotometer (FTIR), scanning electron microscope (SEM), high-resolution transmission electron microscope (HRTEM), Raman spectroscopy and photoluminescence (PL). The results demonstrate that the nanowires are single-crystal GaN with hexagonal wurtzite structure and high crystalline quality, having the size of 20-50 nm in diameter and several tens of microns in length with some nano-droplets on their tips, which reveals that the growth mechanism of GaN nanowires agrees with vapor-liquid-solid (VLS) process. Five first-order Raman active phonon bands move to low shift and A₁(TO), E₁(TO), and E₂ (high) bands are overlapped and broaden, which is caused by uncertainty in the phonon wave vector. Five non-first-order active Raman phonons also appear, which is caused by the small dimension and high surface disorder degree. A blue-shift of the band-gap emission occurs due to quantum confinement effect.     

Synthesis of graphene ribbons using selective chemical vapor deposition

A new method for implementing graphene ribbons using selective graphene growth on metal-sidewall by chemical vapor deposition has been proposed. In this method, Ni catalyst is pre-patterned before chemical vapor deposition, and graphene film is selectively grown on the sidewall of the nickel for graphene ribbons. The graphene ribbons were confirmed by TEM image and Raman spectroscopy, and the fabricated graphene ribbon transistors showed well gate-modulated output characteristics. We believe this sidewall-graphene could be useful for applications such as graphene sensors which require high surface area of graphene.     

Direct growth of graphene on gallium nitride by using chemical vapor deposition without extra catalyst

Graphene on gallium nitride(GaN) will be quite useful when the graphene is used as transparent electrodes to improve the performance of gallium nitride devices. In this work, we report the direct synthesis of graphene on GaN without an extra catalyst by chemical vapor deposition. Raman spectra indicate that the graphene films are uniform and about 5–6 layers in thickness. Meanwhile, the effects of growth temperatures on the growth of graphene films are systematically studied, of which 950℃ is found to be the optimum growth temperature. The sheet resistance of the grown graphene is 41.1Ω/square,which is close to the lowest sheet resistance of transferred graphene reported. The mechanism of graphene growth on GaN is proposed and discussed in detail. XRD spectra and photoluminescence spectra indicate that the quality of GaN epi-layers will not be affected after the growth of graphene.     

Synthesis of thin silicon nanowires using gold-catalyzed chemical vapor deposition

Silicon nanowires were synthesized using chemical vapor deposition catalyzed by gold nanoparticles deposited on silicon substrates. Silicon nanowires grew epitaxially in 111 directions on (100)-oriented silicon substrates. For a particular set of process parameters, we observed a critical thickness of the nucleating gold film, below which nanowires could not be grown. We studied the dependence of the Au-Si alloy droplet size and size distribution on the starting gold film thickness and the annealing conditions. Increasing the Cl:Si ratio in the gas phase allowed nanowires to grow on smaller Au-Si alloy droplets. We used a modified heating sequence that deconvoluted the effect of silicon substrate consumption and gas-phase silicon supply on the Au-Si alloy formation and allowed growth of nanowires with diameters less than 20 nm. The modified heating sequence was also used to demonstrate the growth of bridging silicon nanowires with diameters less than 20 nm, which is a significant step in producing electronic devices. PACS 81.07.b; 81.15.Gh     

Synthesis of flower-like WS2 by chemical vapor deposition

Flower-like tungsten disulfide (WS₂) with a diameter of 5-10 μm is prepared by chemical vapor deposition (CVD). Scanning electron microscopy (SEM), energy dispersive spectrometer (EDS), Raman spectroscopy, and ultraviolet-visible (UV-vis) spectroscopy are used to characterize its morphological and optical properties, and its growth mechanism is discussed. The key factors for the formation of flower-like WS₂ are determined. Firstly, the cooling process causes the generation of nucleation dislocations, and then the "leaf" growth of flower-like WS₂ is achieved by increasing the temperature.     

纳米TiO_2薄膜的低温等离子体制备技术

以四氯化钛为源物质,氩气为载气,氧气为反应气体,利用低温等离子体增强化学气相沉积在硅基表面制备出了TiO2薄膜。使用场发射扫描电子显微镜、X射线衍射仪等检测分析表征TiO2薄膜的性能与性质,并探讨了工艺条件如基片材料、沉积时间和基片温度对薄膜性能的影响。结果表明:制备的薄膜表面光滑均匀,结构致密,最小晶粒尺寸约15 nm;薄膜的晶型主要依赖于沉积温度,低于300℃沉积的薄膜是无定形的,300℃之上沉积的薄膜是锐钛矿结构。     

Synthesis of carbon nanotubes by ECR plasma-assisted chemical vapor deposition

Carbon nanotubes have been grown using an electron cyclotron resonance (ECR) plasma source at a substrate temperature of 500 °C. Methane has been used as the source gas. A network of carbon nanotubes has been observed in scanning electron microscopy. Transmission electron microscopy revealed that the structure consists of straight, Y-junction and ring-like nanotubes. Further, electron diffraction of the nanotubes confirms a graphite crystal structure. PACS 81.16.He; 68.37.Lp; 68.37.Hk; 85.35.Kt; 75.75.+a     

Synthesis and characterization of graphenated carbon nanotubes on IONPs using acetylene by chemical vapor deposition method

The graphenated carbon nanotubes (G-CNTs) were synthesized on monodisperse spherical iron oxide nanoparticles (IONPs) using acetylene as carbon precursor by simple chemical vapor deposition method. The reaction parameters such as temperature and flow of carbon source were optimized in order to achieve G-CNTs with excellent quality and quantity. Transmission electron microscopy (TEM) clearly illustrated that the graphene flakes are forming along the whole length on CNTs. The degree of graphitization was revealed by X-ray diffraction (XRD) analysis and Raman spectroscopic techniques. The intensity of D to G value was less than one which confirms the obtained G-CNTs have high degree of graphitization. The optimum reaction temperature for the IONPs to form metallic clusters which in turn lead to the formation of G-CNTs with high carbon deposition yield is at 900 °C. The TEM shows the CNTs diameter is 50 nm with foiled graphene flakes of diameter around 70 nm. Our results advocate for IONPs as a promising catalytic template for quantitative and qualitative productivity of nanohybrid G-CNTs. The produced G-CNTs with high degree of graphitization might be an ideal candidate for nanoelectronic application like super capacitors and so on.     

Synthesis of multi-walled carbon nanotubes using CoMnMgO catalysts through catalytic chemical vapor deposition

The Co Mg O and Co Mn Mg O catalysts are prepared by a co-precipitation method and used as the catalysts for the synthesis of carbon nanotubes（CNTs） through the catalytic chemical vapor deposition（CCVD）. The effects of Mn addition on the carbon yield and structure are investigated. The catalysts are characterized by temperature programmed reduction（TPR） and X-ray diffraction（XRD） techniques, and the synthesized carbon materials are characterized by transmission electron microscopy（TEM） and thermo gravimetric analysis（TG）. TEM measurement indicates that the catalyst Co Mg O enclosed completely in the produced graphite layer results in the deactivation of the catalyst. TG results suggest that the Co Mn Mg O catalyst has a higher selectivity for CNTs than Co Mg O. Meanwhile, different diameters of CNTs are synthesized by Co Mn Mg O catalysts with various amounts of Co content, and the results show that the addition of Mn avoids forming the enclosed catalyst, prevents the formation of amorphous carbon, subsequently promotes the growth of CNTs, and the catalyst with decreased Co content is favorable for the synthesis of CNTs with a narrow diameter distribution.The Co Mn Mg O catalyst with 40% Co content has superior catalytic activity for the growth of carbon nanotubes.     

Synthesis of multiwall carbon nanotubes by chemical vapor deposition of ferrocene alone

Multiwall carbon nanotubes (MWNTs) filled with Fe nanoparticles (NPs) have been synthesized by thermal chemical vapor deposition of ferrocene alone as the precursor. The MWNTs were grown at different temperatures: 980 and 800 ^°C. Characterization of as-prepared MWNTs was done by scanning and transmission electron microscopy, and X-ray diffraction. The transmission electron microscopy study revealed that Fe NPs encapsulated in MWNTs grown at 980 and 800 ^°C are spherical and rod shaped, respectively. Room-temperature vibrating sample magnetometer studies were done on the two samples up to a field of 1 T. The magnetization versus magnetic field loop reveals that the saturation magnetization for the two samples varies considerably, almost by a factor of 4.6. This indicates that Fe is present in different amounts in the MWNTs grown at the two different temperatures.     

纳米TiO2薄膜的低温等离子体制备技术

以四氯化钛为源物质,氩气为载气,氧气为反应气体,利用低温等离子体增强化学气相沉积在硅基表面制备出了TiO2薄膜。使用场发射扫描电子显微镜、X射线衍射仪等检测分析表征TiO2薄膜的性能与性质,并探讨了工艺条件如基片材料、沉积时间和基片温度对薄膜性能的影响。结果表明：制备的薄膜表面光滑均匀,结构致密,最小晶粒尺寸约15 nm;薄膜的晶型主要依赖于沉积温度,低于300 ℃沉积的薄膜是无定形的,300 ℃之上沉积的薄膜是锐钛矿结构。     

Synthesis of well-aligned carbon nanotubes by inductively coupled plasma chemical vapor deposition

Uniform and well-aligned carbon nanotubes (CNTs) have been grown using a high density inductively coupled plasma chemical vapor deposition (ICP-CVD) system. A gas mixture of methane-hydrogen was used as the source and Ni as the catalyst for the CNT growth. The effect of process parameters, such as inductive RF power, DC bias voltage and CH₄/H₂ ratio, on the growth characteristics of CNTs was investigated. It was found that both plasma intensity and ion flux to the substrate, as controlled by the inductive RF power and DC bias voltage, respectively, can greatly affect the growth of CNTs. The relative importance of the generation of ions and the subsequent transport of ions to the substrate as serial process steps are considered as the two underlying factors in determining the growth characteristics of CNTs. PACS 81.05.Uw; 81.07.De; 81.15.Gh     

Thin tantalum pentoxide films deposited by photo-induced chemical vapor deposition using an injection liquid source

We report the growth of thin tantalum pentoxide films on Si (100) by ultraviolet-assisted injection liquid source (UVILS) chemical vapor deposition (CVD) at low temperatures (200-350 °C). This new technique combines the intense radiation from an excimer lamp (5=222 nm) with a novel injection liquid source capable of delivering precisely controllable quantities of a liquid metalorganic precursor into the CVD chamber. The composition and optical properties of the oxides were determined using a variety of standard characterization methods. After optimization of the deposition parameters, the best layers were incorporated into simple MOS test structures to enable electrical characterization. Refractive index values of 2.09ǂ.07, fixed oxide charge content of <5᎒¹⁰ cm^-2, breakdown fields higher than 2 MV/cm and dielectric constant values of 18-24 were readily achievable in the as-deposited films. These properties compare favorably with those for layers prepared by conventional thermal-CVD at significantly higher temperatures of 500 °C.     

Synthesis and characterization of silica nanosprings by a low temperature chemical vapor deposition

Silica nanosprings were synthesized using a simple, low temperature, chemical vapor deposition method via a vapor–liquid–solid mechanism. Nanosprings with excellent uniformity and helicity in high and repeatable yields have been observed. The morphology and crystal structure of the nanosprings were characterized by scanning electron microscopy and transmission electron microscopy. The chemical composition of the nanosprings was determined using the energy-filtered transmission electron microscopic method. The as-grown nanomaterials were confirmed to be amorphous silica with irregularly shaped Au catalytic particles located at the tips. In addition, we propose a spontaneous spinning growth model to explain the formation of such helical nanostructures.     

Oxygen contaminants affecting on the electronic structures of the carbon nano tubes grown by rapid thermal chemical vapor deposition

Oxygen-related electronic structures of CNTs (carbon nanotubes) grown by rapid thermal chemical vapor deposition (RT-CVD) have been investigated by using partial electron yield near edge X-ray absorption spectroscopy (PEY-NEXAFS) and X-ray photoelectron spectroscopy (XPS). On the CNT surface with increased oxygen resulting from e-beam irradiation under the O₂ gas environment, C k-edge NEXAFS spectra showed an increase of the oxygen-related resonance peaks ranging from 287 to 289 eV whereas the sp² related peak at 285.4 eV was nearly unchanged. After the complete removal process of the oxygen atom on the surface by annealing the sample at 500 °C for 30 min, C K-edge spectra showed an abrupt decrease of the oxygen-related resonance peaks in 287-289 eV and an increase of the sp² related peak at 285.4 eV, indicating that the degree of crystallinity in the CNT sample was improved.     

High pressure studies using two-stage diamond micro-anvils grown by chemical vapor deposition

Ultra-high static pressures have been achieved in the laboratory using a two-stage micro-ball nanodiamond anvils as well as a two-stage micro-paired diamond anvils machined using a focused ion-beam system. The two-stage diamond anvils’ designs implemented thus far suffer from a limitation of one diamond anvil sliding past another anvil at extreme conditions. We describe a new method of fabricating two-stage diamond micro-anvils using a tungsten mask on a standard diamond anvil followed by microwave plasma chemical vapor deposition (CVD) homoepitaxial diamond growth. A prototype two-stage diamond anvil with 300?µm culet and with a CVD diamond second stage of 50?µm in diameter was fabricated. We have carried out preliminary high pressure X-ray diffraction studies on a sample of rare-earth metal lutetium sample with a copper pressure standard to 86?GPa. The micro-anvil grown by CVD remained intact during indentation of gasket as well as on decompression from the highest pressure of 86?GPa.     

Synthesis of strong SiV photoluminescent diamond particles on silica optical fiber by chemical vapor deposition

The separated silicon-vacancy(SiV) photoluminescent diamond particles were synthesized on a silica optical fiber by hot filament chemical vapor deposition(HFCVD). The effects of the pre-treated method and chamber pressure on the microstructure and photoluminescence of the diamond particles were investigated. The results show that the diamond particles are homogeneously distributed on the surface of the optical fiber. With the chamber pressure increasing from 1.6 kPa to 3.5 kPa, the shape of the particles transforms from flake to circle, while the diamond particles cannot be deposited on the fiber with the pressure further increased to 4.5 kPa. The samples synthesized under 2.5 kPa chamber pressure are composed of diamond particles with size around 200–400 nm, exhibiting stronger SiV photoluminescence with the width of around 6 nm.     

Growth of coatings on nanoparticles by photoinduced chemical vapor deposition

Photoinduced chemical vapor deposition was used to grow organic coatings on NaCl nanoparticles. Aerosolized nanoparticles were mixed with a vapor-phase coating reactant and introduced into a room-temperature, atmospheric-pressure cell, where the mixture was exposed to 172-nm radiation from a Xe₂* excimer lamp. Several coating reactants were investigated; the most successful was methyl methacrylate (MMA). Tandem differential mobility analysis (TDMA) was used to determine coating thicknesses as a function of initial particle size. For NaCl particles ranging from 20 to 60 nm in mobility diameter, the thicknesses ranged from sub-nm to 20 nm depending on MMA flow rate and initial particle size.