电子束发射度变化的解析估计

本文使用一般包络方程理论推导出轴对称电子束在傍轴近似下的稳态传输过程中的发射度变化公式。结果表明电子束发射度变化与引导磁场及离子通道电场无直接关系,而仅仅与电子束分布的变化有关;发射度变化的本质是电子束的静电势能和横向运动的动能之间的转换。本文的解析结果与数值模拟结果符合得相当好。本文还定性讨论了电子束平均正则角动量对发射度变化的影响。     

W波段分布作用速调管的设计和实验研究

基于运动学理论、感应电流定理和电荷守恒定律,分析了分布作用谐振腔的渡越时间效应,推导了各个谐振腔工作于π模的电子注与微波之间的能量转换系数、电子负载电导和电子负载电纳,计算结果显示采用分布作用谐振腔有利于提高速调管的工作效率.利用三维电磁仿真软件,设计了一款工作于W波段的分布作用速调管.完成了速调管的加工和封接,搭建了测试平台,开展了相关实验研究.实验结果显示,当电子注电压20.8 kV,电流0.3 A,输入功率30 mW时,在中心频率95.37 GHz处,得到了175 W峰值脉冲输出功率,电子效率2.8%,增益34.6 dB, 3 dB带宽大于90 MHz.     

电子辐射环境中NPN输入双极运算放大器的辐射效应和退火特性

本文对不同偏置下的NPN输入双极运算放大器LM108分别在1.8 MeV和1 MeV两种电子能量下、不同束流电子辐照环境中的损伤特性及变化规律进行了研究, 分析了不同偏置状态下其辐照敏感参数在辐照后三种温度 (室温, 100 ℃, 125 ℃) 下随时间变化的关系, 讨论了引起电参数失效的机理, 并且分析了器件在室温和高温的退火效应以讨论引起器件电参数失效的机理. 结果表明, 1.8 MeV和1 MeV 电子对运算放大器LM108主要产生电离损伤, 相同束流下1.8 MeV电子造成的损伤比1 MeV 电子更大, 相同能量下0.32 Gy(Si)/s束流电子产生的损伤大于1.53 Gy(Si)/s束流电子. 对于相同能量和束流的电子辐照, 器件零偏时的损伤大于正偏时的损伤. 器件辐照后的退火行为都与温度有较大的依赖关系, 而这种关系与辐照感生的界面态密度增长直接相关.     

A study of the charging and dissociation of SiO2 Surfaces by AES

AES is used to determine the initial spectrum of a vacuum-broken SiO₂ surface and to follow its dissociation under the electron beam probe. Both Auger peaks heights and energies are affected by the irradiation. The change in stoichiometry is accompanied by a decrease of the surface charge by 5–8 V. The relation between stoichiometry and charge is explained by the influence of radiation-induced defects on secondary electron emission. The reduction of SiO₂ is characterized in terms of irradiation dose, dissociation cross-section and electron impact efficiency. Resistance to radiation damage is increased by surface carbon contamination. The chemical contribution to the Auger peak energy can be distinguished from the charging effect leading to a shift between element and compound of 12 eV for the silicon peak.     

The positive charging effect of dielectric films irradiated by a focused electron beam

Space charge and surface potential profiles are investigated with numerical simulation for dielectric films of SiO₂ positively charged by a focused electron beam. By combining the Monte Carlo method and the finite difference method, the simulation is preformed with a newly developed comprehensive two-dimensional model including electron scattering, charge transport and trapping. Results show that the space charge is distributed positively, like a semi-ellipsoid, within a high-density region of electrons and holes, but negatively outside the region due to electron diffusion along the radial and beam incident directions. Simultaneously, peak positions of the positive and negative space charge densities shift outwards or downwards with electron beam irradiation. The surface potential, along the radial direction, has a nearly flat-top around the center, abruptly decreases to negative values outside the high-density region and finally increases to zero gradually. Influences of electron beam and film parameters on the surface potential profile in the equilibrium state are also shown and analyzed. Furthermore, the variation of secondary electron signal of a large-scale integration sample positively charged in scanning electron microscopic observation is simulated and validated by experiment.     

Free-electron lasers and masers on curved paths

The possibility of building free-electron lasers and masers with quasi-circular undulators is considered. The two-mirror cavity is replaced by a suitable waveguide. The magnetic field along the orbit has a continuous component superimposed on the alternating one. Besides allowing large freedom for electron guiding and focusing, the structure allows effective negative mass conditions, which may enhance the electron beam modulation when space charge effect are important. Furthermore the radiation frequency can be higher than that in a linear undulator with the same electron energy, and long interaction times are possible in a compact structure. Work partially supported by the CNR (Consiglio Nazionale delle Ricerche, Italy), contract n. 78.00915.02 and n.78.00916.02.     

入射电子能量对低密度聚乙烯深层充电特性的影响

高能带电粒子与航天器介质材料相互作用引起的深层带电现象, 一直是威胁航天器安全运行的重要因素之一. 考虑入射电子在介质中的电荷沉积、能量沉积分布以及介质中的非线性暗电导和辐射诱导电导, 建立了介质深层充电的单极性电荷输运物理模型. 通过求解电荷连续性方程和泊松方程, 可以得出不同能量 (0.1–0.5 MeV) 电子辐射下, 低密度聚乙烯 (厚度为1 mm) 介质中的电荷输运特性. 计算结果表明, 不同能量的电子辐射下, 介质充电达到平衡时, 最大电场随入射能量的增加而减小; 同一能量辐射下, 最大电场随束流密度的增大而增加. 入射电子能量较低时 (≤ 0.3 MeV) , 最大电场随束流密度的变化趋势基本相同. 具体表现为: 当束流密度大于3× 10^-9 A/m²时, 最大场强超过击穿阈值2×10⁷ V/m, 发生静电放电 (ESD) 的可能性较大. 随着入射电子能量的增加, 发生静电放电 (ESD) 的临界束流密度增大, 在能量为0.4 MeV时, 临界束流密度为6×10^-8 A/m². 当能量大于等于0.5 MeV时, 在束流密度为10^-9–10^-6 A/m²的范围内, 均不会发生静电放电 (ESD) . 该物理模型对于深入研究深层充放电效应、评估航天器在空间环境下 深层带电程度及防护设计具有重要的意义. 关键词： 高能电子辐射 低密度聚乙烯(LDPE) 介质深层充电 电导特性     

Coupling Instability of a Warm Relativistic Electron Beam with Ion-Channel Guiding

In this paper, the coupling instability of warm relativistic electron beam (WREB) propagating through the ion channel guiding is investigated in detail. Obtaining the equilibrium state of the system by considering the self-electric and azimuthal magnetic field, the fluid-Maxwell equations as well as linear perturbation theory are employed to derive the dispersion relation of the excited modes in the system. Numerical analysis of the obtained dispersion relation shows that the electromagnetic (EM) instability can be induced nearly the center of the beam through coupling between the fast electron plasma wave (FEPW), originated from the longitudinal oscillation of WREB, and fast forward electromagnetic wave (FFEW). In this sense, growing the perturbation amplitude occurs due to transport the kinetic energy of WREB to the EM wave at the specific frequency range, where the phase velocity of FEPW and FFEW is coincided. The results of the present investigation will greatly contribute to the understanding of the stability of the warm relativistic electron beam in laboratory experiments, such as in free electron laser experiments, where the ion-channel guiding is used to confine the electrons against the self-repulsive forces generated by the beam itself.     

薄膜体声波谐振器的伽马辐照敏感机理分析

实验证明薄膜体声波谐振器(FBAR)用于检测伽马辐照是可行的,但未对敏感机理进行深入研究。针对这一问题,根据两种不同的FBAR结构,提出了不同机理来解释FBAR在伽马辐照下谐振频率偏移的原因。其中结构一FBAR为四层叠层结构（金属层-压电层-氧化层-金属层）,伽马辐照之后,会在辐照敏感层(氧化层)形成一个电压,相当于给压电层施加了一个直流电压,从而使谐振频率发生偏移;结构二与结构一不同的是,结构二FBAR在氧化层和压电层之间有一半导体层,辐照之后在氧化层中形成的电压改变了半导体的表面势,使半导体空间电荷层电容发生改变,从而改变谐振频率。通过仿真得到两种不同机理的结果,并与相关文献的测试结果对比,发现频率偏移的趋势和频率偏移量的数量级是相同的,因此提出来的两种机理是可行的。     

Self-oscillating mode of electron beam generation in a source with a grid plasma emitter

Plasma processes and electron beam generation in an electron source with a grid plasma cathode are investigated. Experiments are conducted under the conditions of efficient electron extraction and an intense counter ion flux, which break grid stabilization. It is shown that a rise in the gas pressure and in the emitting plasma potential leads to the plasma potential modulation in the frequency range 10⁴–10⁵ Hz. Under the self-oscillation conditions, an electron beam is obtained with a constant current of up to 16 A and an electron energy modulated up to 100% of the accelerating voltage level (100–300 V). An explanation is given for relaxation self-oscillations arising when the plasma potential grows and for the system’s inertial non-linearity arising when the plasma potential induced by the space charge of the counter ion flux lags behind the current of electron-beam-generated ions.     

X波段长脉冲同轴多注相对论速调管放大器的分析与设计

为了提高相对论速调管放大器的工作频率、输出功率以及转换效率, 结合三重轴相对论速调管和多注速调管的特点, 采用三维电磁粒子模拟软件分析与设计了工作在X波段的长脉冲同轴多注相对论速调管放大器, 通过优化设计有效地抑制了X波段长脉冲相对论速调管放大器的自激振荡, 避免了脉冲缩短现象的产生, 使X波段相对论速调管放大器在长脉冲状态下能够稳定工作, 在注入微波功率为70 kW、束压为600 kV、束流为5 kA、轴向引导磁感应强度为0.8 T的条件下, 输出微波功率达到了1.23 GW, 效率为41%, 增益为42 dB.     

Effect of 30 Mev Li 3+ ion and 8 MeV electron irradiation on n-channel MOSFETs

The effect of 30 v MeV Li 3+ ion and 8 v MeV electron irradiation on the threshold voltage ( V TH ), the voltage shift due to interface trapped charge ( j V Nit ), the voltage shift due to oxide trapped charge ( j V Not ), the density of interface trapped charge ( j N it ), the density of oxide trapped charge ( j N ot ) and the drain saturation current ( I D v Sat ) were studied as a function of fluence. Considerable increase in j N it and j N ot , and decrease in V TH and I D v Sat were observed in both types of irradiation. The observed difference in the properties of Li 3+ ion and electron irradiated MOSFETs are interpreted on the basis of energy loss process associated with the type of radiation. The study showed that the 30 v MeV Li 3+ ion irradiation produce more damage when compared to the 8 v MeV electron irradiation because of the higher electronic energy loss value. High temperature annealing studies showed that trapped charge generated during ion and electron irradiation was annealed out at 500 v °C.     

Microwave guiding of electrons on a chip

We demonstrate the transverse confinement and guiding of a low energy electron beam of several electron volts in a miniaturized linear quadrupole guide. The guiding potential is generated by applying a microwave voltage to electrodes fabricated on a planar substrate, which allows the potential landscape to be precisely shaped on a microscopic scale. We realize transverse trapping frequencies of 100 MHz and guide electrons along a circular section of 37 mm length. A detailed characterization of the guiding properties in terms of potential depth and dynamic stability is given. This new technique of electron guiding promises various applications in guided matter-wave experiments such as electron interferometry.     

Absorption of electromagnetic energy by slow electrons under scattering from Coulomb centers

Simple analytical expressions are obtained for the rate of the inverse stimulated bremsstrahlung absorption under electron scattering from a Coulomb center with charge Z in the presence of the electromagnetic field. The initial and final values of electron energy are assumed to be small compared to the Rydberg energy Z ² (atomic units are used throughout). Single-photon processes of absorption and induced radiation of photon by electron are treated. It is assumed that the electromagnetic field frequency ω is rather low, so that the condition Zω/p ³ ? 1, where p is the electron momentum, and the condition ?ω ? p ² are valid. However, this frequency is assumed to be fairly high compared to the electron-Coulomb center collision frequency: ω ? v _nei. The dependences of the rates of photon absorption and induced radiation on the angle θ between the direction of incident electron and the electromagnetic field polarization vector (assumed to be linearly polarized) are obtained. It is demonstrated that, for any angles θ, the rate of photon absorption is higher than the rate of induced radiation and, therefore, the Marcuse effect for slow electrons (electromagnetic field amplification) is absent. It is further demonstrated that a slow electron on the average absorbs double ponderomotive energy per collision with an ion (Coulomb center) in Maxwellian plasma. This agrees both with the known results calculation for fast electrons and with the known results of the calculation based on the classical Boltzmann kinetic equation for plasma.     

Plasma effects in a free electron laser

The introduction of a plasma and a strong guide magnetic field in a free electron laser (FEL) slows down the phase velocity of radiation, significantly reducing the requirements on beam energy for generating frequencies below the electron-cyclotron frequency (ω₁≲ω_c). Around plasma resonance (ω₁~ω_p), the FEL mode couples to two-stream instability (TSI), attaining a large growth rate, comparable to that of the wiggler-free TSI. At plasma densities comparable to beam density, the beam-induced local depression in the electron density of the plasma acts as a waveguide for guiding any high-frequency radiation when the beam current is ≳17 kA     

同轴回旋行波放大器的理论和数值研究

 给出了一组描述同轴回旋行波放大器中波束相互作用的非线性自洽方程组，对该放大器的运行特性进行了研究。得到：在小信号区，辐射场的增益随同轴波导的内外半径比b/a的增加而增加，达到饱和时的辐射功率仅略有下降；内外导体管壁上的功率损耗密度随b/a的增加而减小。采用电压为90kV，电流为10A，纵向速度零散度为3%，速率比为1的电子束，在34.26～36.78GHz的频率范围内，计算得到了峰值功率约230kW的微波输出，相应的增益和效率分别为46.6dB和25.5%，带宽为7%，内外导体管壁上功率的最大损耗分别为80和56W/cm²。     

Shallow center in AgBr: Theoretical investigation by sum rules

In AgBr, an absorption band at 168 cm^?1 can be attributed to absorption by an electron bound in an electrostatic potential. The comparison between the experimental values of the moments of the absorption coefficient and their theoretical expressions gives the ground state mean radius, mean kinetic energy and mean charge density seen by the electron. The ionization energy and electron charge distribution of this center are also obtained.     

Three dimensional gain analysis of free electron laser with focusing permanent magnet wiggler

A three dimensional simulation software system developed to estimate a free electron laser (FEL) gain has been applied to FEL using a standard plane polarized wiggler and an alternately shifted magnet wiggler. It is seen for the latter wiggler that a large filling factor could be selected and each maximum gain corresponding to each orbit of electron beam concentrates at a certain frequency region of FEL radiation. It is, therefore, implied that a proper shift between the adjacent magnets in the wiggler produces the improvement of the FEL gain.     

A slow wave free-electron laser

A simple calculation of a free-electron laser in the Compton regime that uses a dielectric-lined waveguide is presented. The introduction of a dielectric lining in a free-electron laser considerably reduces the requirements on beam voltage for generating a given frequency ω₁=k₀c/(1 - v_b η/c), where k₀ is the wiggler wave period η is the effective index of refraction (1<η<√ϵ) and ϵ is the permittivity. The system supports electromagnetic waves whose Poynting flux is largely concentrated in the dielectric; hence the electron beam is required to propagate close to the dielectric lining. The mode structure and dispersion behavior of the guiding system without the beam are discussed. a thin annular beam is introduced, and a perturbation theory is used to obtain the frequency and growth rate of radiation     

填充等离子体的介质同轴波导中的切伦科夫辐射

 利用自洽线性场理论，导出了薄环形相对论电子注通过填充等离子体的介质同轴波导中的注波互作用色散方程，得到了注波互作用产生切伦科夫辐射的同步条件和波增长率。分析了填充等离子体后的波与电子注之间的能量交换及等离子体密度对色散特性、波增长率和注波能量交换的影响。分析结果表明：切伦科夫辐射是由沿介质同轴波导传播的慢波与沿薄环形相对论电子注传播的负能空间电荷波耦合所致，且其耦合强度与电子注的密度成正比；输出频率和波增长率随着填充等离子体密度的增大而提高；保持一定的输出频率，增大电子注的束流可得到高的微波输出功率。