共查询到20条相似文献,搜索用时 15 毫秒
1.
A. V. Karotki A. V. Mudryi M. V. Yakushev F. Luckert R. Martin 《Journal of Applied Spectroscopy》2010,77(5):668-674
Thin films of Cu(In, Ga)Se2 (CIGS) with a Ga/(Ga + In) ratio of ~0.27 corresponding to the standard elemental composition for solar-energy transducers
were grown on Mo-coated glass substrates by the Cu, In, Ga, and Se co-evaporation technique from different sources. Transmission
(T), photoluminescence (PL), and photoluminescence excitation (PLE) spectra at 4.2 K were used to analyze electronic properties
in the asgrown and electron-irradiated CIGS films. The band-gap energy (Eg) of the CIGS films measured using both transmission and PLE methods was found to be about 1.28 eV at 4.2 K. Two deep bands
in the PL spectra of the irradiated CIGS films, P1 at ~0.91 eV and P2 at ~0.77 eV, have been detected. These bands are tentatively associated with copper atoms substituting indium (CuIn) and indium vacancies VIn, respectively, as the simplest radiation-induced defects. 相似文献
2.
Jérémy Barbé Jessica Eid Erik Ahlswede Stefanie Spiering Michael Powalla Rakesh Agrawal Silvano Del Gobbo 《Journal of nanoparticle research》2016,18(12):379
Cu(In,Ga)Se2 (CIGSe) thin film solar cells were fabricated by direct inkjet printing of Cu(In,Ga)S2 (CIGS) nanoparticles followed by rapid thermal annealing under selenium vapor. Inkjet printing is a low-cost, low-waste, and flexible patterning method which can be used for deposition of solution-based or nanoparticle-based CIGS films with high throughput. XRD and Raman spectra indicate that no secondary phase is formed in the as-deposited CIGS film since quaternary chalcopyrite nanoparticles are used as the base solution for printing. Besides, CIGSe films with various Cu/(In + Ga) ratios could be obtained by finely tuning the composition of CIGS nanoparticles contained in the ink, which was found to strongly influence the devices performance and film morphology. To date, this is the first successful fabrication of a solar device by inkjet printing of CIGS nanoparticles. 相似文献
3.
At 4.2 K, the photoluminescence spectra of Cu(In,Ga)Se2 films irradiated by electrons with an energy of 5 MeV displayed the 0.93-and 0.79-eV bands that owe their origin to the radiative
recombination of nonequilibrium charge carriers on radiation-induced defects. The position of the energy levels of the defects
is determined and their nature is discussed.
__________
Translated from Zhurnal Prikladnoi Spektroskopii, Vol. 72, No. 6, pp. 805–808, November–December, 2005. 相似文献
4.
We have studied the effect of doping with Eu2+ and Ce3+ ions on the photoluminescence (PL) of BaGa2Se4 crystals in the temperature range 77–300 K. We have established that the broad bands with maxima at wavelengths 456 nm and
506 nm observed in the photoluminescence spectra of BaGa2Se4:Ce3+ crystals are due to intracenter transitions 5d → 2F7/2 and 5d →2F5/2 of the Ce3+ ions, while the broad photoluminescence band with maximum at 521 nm in the spectrum of BaGa2Se4:Eu2+ is associated with 4f6 5d → 4f7 (8S7/2) transitions of the Eu2+ ion. We show that in BaGa2Se4:Eu2+,Ce3+ crystals, excitation energy is transferred from the Ce3+ ions to the Eu2+ ions. 相似文献
5.
We have studied photoluminescence and thermoluminescence (PL and TL) in CaGa2Se4:Eu crystals in the temperature range 77–400 K. We have established that broadband photoluminescence with maximum at 571 nm
is due to intracenter transitions 4f6 5d–4f7 (8S7/2) of the Eu2+ ions. From the temperature dependence of the intensity (log I–103/T), we determined the activation energy (E
a = 0.04 eV) for thermal quenching of photoluminescence. From the thermoluminescence spectra, we determined the trap depths:
0.31, 0.44, 0.53, 0.59 eV. The lifetime of the excited state 4f6 5d of the Eu2+ ions in the CaGa2Se4 crystal found from the luminescence decay kinetics is 3.8 μsec.
Translated from Zhurnal Prikladnoi Spektroskopii, Vol. 76, No. 1, pp. 112–116, January–February, 2009. 相似文献
6.
Magnetic properties of Zn1-xMxCr2Se4 (M=In, Ni, Al, Ga) in high magnetic field up to 14 T and at low temperatures are presented. ZnCr2Se4 belongs to the group of normal spinels with Zn2+ located at tetrahedral (A) sites and Cr3+ occupying (B) sites of the cubic close-packed array of selenium anions. Magnetic order in the compounds is connected with superexchange interactions, which are positive between the nearest neighbors and negative between the next-nearest neighbors. Substitution of one of the cations of spinel with another 3d metal causes essential changes in the cation distribution and physical properties. 相似文献
7.
S.S. Yi J.S. Bae B.K. Moon J.H. Jeong I.W. Kim H.L. Park 《Applied Physics A: Materials Science & Processing》2003,76(3):433-437
ZnGa2O4 thin-film phosphors have been grown on Si(100), Al2O3(0001) and MgO(100) substrates using pulsed laser deposition. The structural characterization was carried out on a series
of ZnGa2O4 films grown on various substrates under various substrate temperatures and oxygen pressures. The films grown on these substrates
not only have different crystallinity and surface morphology, but also different Zn/Ga composition ratio. The crystallinity
and photoluminescence (PL) of the ZnGa2O4 films are highly dependent on the deposition conditions, in particular the stoichiometry ratio of Zn/Ga and the kind of substrate.
The variation of Zn/Ga in the films also depends on not only the oxygen pressure but also the substrate temperature during
deposition. The PL properties of pulsed laser deposited ZnGa2O4 thin films have indicated that Al2O3(0001) and MgO(100) are promising substrates for the growth of high-quality ZnGa2O4 thin films and that the luminescence brightness depends on the substrate. The luminescence spectra show a broad band extending
from 350 to 600 nm and peaking at 460 nm.
Received: 11 July 2002 / Accepted: 31 July 2002 / Published online: 28 October 2002
RID="*"
ID="*"Corresponding author. Fax: +82-51-6206356, E-mail: jhjeong@pknu.ac.kr 相似文献
8.
A. V. Mudryi V. F. Gremenok A. V. Karotki V. B. Zalesski M. V. Yakushev F. Luckert R. Martin 《Journal of Applied Spectroscopy》2010,77(3):371-377
The chemical composition of Cu(In,Ga)Se2 (CIGS) semiconductor compounds is analyzed by local x-ray spectral microanalysis and scanning Auger electron spectroscopy.
X-ray diffraction analysis reveals a difference in the predominant orientation of CIGS films depending on the technological
conditions under which they are grown. The chemical composition is found to have a strong effect on the shift in the self-absorption
edge of CIGS compounds. It is shown that a change in the relative proportion of Ga and In in CIGS semiconducting compounds
leads to a change in the band gap Eg for this material in the 1.05–1.72 eV spectral range at 4.2 K. 相似文献
9.
分别在苏打石灰玻璃、Mo箔、无择优取向的Mo薄膜以及(110)择优取向的Mo薄膜四种不同衬底上,采用共蒸发工艺沉积约2 μm厚的Cu(In,Ga)Se2薄膜,用X射线衍射仪测量薄膜的织构,研究衬底对Cu(In,Ga)Se2薄膜织构的影响.在以上四种衬底上沉积的Cu(In,Ga)Se2薄膜的(112)衍射峰强度依次逐渐减弱,(220/204)衍射峰从无到有且强度逐渐增强.在苏打石灰玻璃和Mo箔衬底上的Cu(In,Ga)Se2关键词:
择优取向
Cu(In
2薄膜')" href="#">Ga)Se2薄膜
太阳电池 相似文献
10.
W. Liu Y. Sun W. Li C.-J. Li F.-Y. Li J.-G. Tian 《Applied Physics A: Materials Science & Processing》2007,88(4):653-656
The properties of Cu(In1-xGax)Se2 (CIGS) thin films obtained by selenization of the precursors with different surface layers have been studied, and photovoltaic
devices based on the absorbers were measured and analyzed. The devices constructed by the absorbers obtained by selenization
of the precursors with CuGa-rich surface layers are improved, compared with those with In-rich surface layers. Through XRD,
SEM, SIMS, illuminated J–V, QE and Raman spectra measurements, it was found that the increased Ga contents within the surface
region of films and the graded Ga distribution can be realized in the selenized thin films fabricated by the precursors with
the CuGa-rich surface layer. Consequently, the performances of the photovoltaic devices based on these thin films are further
improved.
PACS 61.72.Ss; 87.64.Jt; 68.60.Bs; 81.15.Cd; 84.60.Jt 相似文献
11.
Thin films of Cu(In,Ga)Se2 were fabricated by evaporation from ternary CuGaSe2 and CuInSe2 compounds for photovoltaic device applications and their properties were investigated. From XRF analysis, the Cu:(In+Ga):Se atomic ratio in all thin films was approximately 1:1:2. The Ga/(In+Ga) atomic ratio in the thin films changed linearly from 0 to 1.0 with increasing the [CGS]/([CGS]+[CIS]) mole ratio in the evaporating materials. However, for thin films prepared at the [CGS]/([CGS]+[CIS]) mole ratio above 0.4, the composition by EPMA analysis was not consistent with that by XRF analysis. The result of EPMA analysis showed that the surface of a thin film was Cu-rich. XRD studies demonstrated that the thin films prepared at the [CGS]/([CGS]+[CIS]) mole ratio under 0.2 had a chalcopyrite Cu(In,Ga)Se2 structure and the preferred orientation to the 112 plane. On the other hand, XRD patterns of the thin films produced at the [CGS]/([CGS]+[CIS]) mole ratio above 0.6 showed the diffraction lines from a chalcopyrite Cu(In,Ga)Se2 and a foreign phase. The separation of a peak was observed near 2θ=27°, indicative the graded Ga concentration in Cu(In,Ga)Se2 thin film. 相似文献
12.
《Journal of Physics and Chemistry of Solids》2003,64(9-10):1891-1894
Bond properties of the chalcopyrite and (defect) stannite phases in the Cu–(In,Ga)–Se system are compared in view of the bond overlap population calculated by the molecular orbital calculation of the DV-Xα method. Bond stretching force constant α is estimated for the stannite phases through the bond Ovlp. The Cu–Se and In(Ga)–Se bonds in defect stannite structure are considered to be mechanically weakened by the 2b-site vacancies. We estimate the weakened force constants to be 60–70% of those in the chalcopyrite structure. On the other hand, in In(Ga)-rich stannite, In(Ga)4d–Se8i and In(Ga)2b–Se8i bonds are estimated to be tighter by 23–25 and 8–9%, respectively, than In(Ga)4b–Se8d bond in the chalcopyrite structure. The Γ1 frequencies of the stannite phases are also calculated using the estimated force constants. Characteristic Raman signals peaked at 160–175 cm−1 observed for the Cu(In1−xGax)3Se5 system are explained by the Cu-rich phase for the Cu–In–Se system, and the phase combination of Cu-rich and Ga2aV2b types for the Cu–Ga–Se system from these calculations. 相似文献
13.
I. N. Ogorodnikov V. A. Pustovarov S. A. Yakovlev L. I. Isaenko S. A. Zhurkov 《Physics of the Solid State》2012,54(1):111-116
This paper reports on the results of the comprehensive study of the dynamics of electronic excitations in K2Al2B2O7 (KABO) crystals, obtained by low-temperature luminescence vacuum ultraviolet spectroscopy with nanosecond time resolution
upon photoexcitation by synchrotron radiation. For the first time, the data have been obtained on the photoluminescence (PL)
decay kinetics, PL spectra with time resolution, PL excitation spectra with time resolution, and reflection spectra at 7 K;
the intrinsic nature of PL at 3.28 eV has been established; luminescence bands of defects have been separated in the visible
and ultraviolet spectral regions; an intense long-wavelength PL band has been detected at 1.72 eV; channels of the formation
and decay of electronic excitations in K2Al2B2O7 crystals have been discussed. 相似文献
14.
Integration of heterogenous materials produces compelling physical phenomena and increased performance of optoelectronic devices. In this work, we integrate CsPbBr3 microplate with WS2 monolayer to investigate the interfacial carrier transfer mechanism in the heterojunction. The quenching of photoluminescence (PL) emission from CsPbBr3 and WS2 after heterostructure formation indicates efficient charge transfer in the junction. Low-temperature PL spectra reveal that the decreasing PL of WS2 arises from the vanishing of biexcitons. Photodetection based on the WS2/CsPbBr3 heterostructure is demonstrated. The higher performance from the junction further certifies the occurrence of charge transfer in the heterojunction. 相似文献
15.
N. S. Sokolov O. V. Anisimov A. G. Banshchikov S. V. Gastev C. Dyroff R. J. Reeves X. Wang W. M. Yen 《Physics of the Solid State》2002,44(8):1455-1458
The low-temperature photoluminescence (PL) of 100 to 300-nm thick MnF2 epitaxial films of the α-PbO2-type orthorhombic structure was studied. The PL spectrum consists mainly of a broad band peaking around 575 nm and a slowly decaying long-wavelength wing. The short-wavelength part of the main band revealed relatively weak spectral features, which are due to magnon replicas of the Mn2+ excitonic line perturbed by Mg and Ca impurities. These features were found to shift toward shorter wavelengths by 12 nm relative to their position in bulk MnF2 crystals. The shift can be accounted for by a change in the crystal field acting on the Mn2+ ions in the orthorhombic phase. 相似文献
16.
The photoluminescence (PL) and PL excitation spectra of CaGa2S4 polycrystals doped with praseodymium are studied in the regions of the activator absorption and the fundamental absorption of the host. It is found that the PL excitation spectrum consists of two regions: broadband absorption in the range of 200-380 nm corresponding to the fundamental absorption of the host and the narrow-band absorption of the dopant in the range of 430–515 nm. The luminescence spectra are different for different excitation wave-lengths, which occurs because Pr3+ ions substitute divalent cations occupying different crystallographic positions in the host crystal lattice. 相似文献
17.
传统制备Cu(In,Ga)Se2(CIGS)手段之一是共蒸发三步法,工艺中通过Cu,In,Ga,Se 4种元素相互扩散、作用形成抛物线形的Ga梯度分布.本文通过调整Ga源温度制备了Ga梯度分布不同的CIGS薄膜及电池.利用多种测试方法,研究了Ga梯度分布不同对CIGS薄膜表面及背面结构性质及电性质的影响,计算分析了表面导带失调值及背面电场对电池性能的影响,从而获得了合适的Ga梯度分布,提高了电池光谱相应,获得了较好的电池性能参数. 相似文献
18.
K.S. Shim H.K. Yang B.K. Moon J.H. Jeong S.S. Yi K.H. Kim 《Applied Physics A: Materials Science & Processing》2007,88(4):623-626
Gd-substituted Y1-xGdxVO4:Eu3+ luminescent thin films have been grown on Al2O3(0001) substrates using pulsed-laser deposition. The films grown under different deposition conditions have been characterized
using microstructural and luminescent measurements. The crystallinity, surface morphology, and photoluminescence (PL) of the
films are highly dependent on the amount of Gd. The photoluminescence (PL) brightness data obtained from Y1-xGdxVO4:Eu3+ films grown under optimized conditions have indicated that the PL brightness is more dependent on the surface roughness than
the crystallinity of the films. In particular, the incorporation of Gd into the YVO4 lattice could induce a remarkable increase of PL. The highest emission intensity was observed with Y0.57Gd0.40Eu0.03VO4 thin film whose brightness was increased by a factor of 2.5 and 1.9 in comparison with that of YVO4:Eu3+ and GdVO4:Eu3+ films, respectively. This phosphor have application to flat panel displays.
PACS 78.20.-e; 78.55.-m; 78.66.-w 相似文献
19.
I. N. Ogorodnikov V. A. Pustovarov S. A. Yakovlev L. I. Isaenko S. A. Zhurkov 《Physics of the Solid State》2012,54(4):735-740
This paper reports on a study of the dynamics of electronic excitations in KBe2BO3F2 (KBBF) crystals by low-temperature luminescent vacuum ultraviolet spectroscopy with nanosecond time resolution under photoexcitation
by synchrotron radiation. The first data have been obtained on the kinetics of photoluminescence (PL) decay, time-resolved
PL spectra, time-resolved PL excitation spectra, and reflection spectra at 7 K; the estimation has been performed for the
band gap E
g = 10.6−11.0 eV; the predominantly excitonic mechanism for PL excitation at 3.88 eV has been identified; and defect luminescence
bands at 3.03 and 4.30 eV have been revealed. The channels of generation and decay of electronic excitations in KBBF crystals
have been discussed. 相似文献