共查询到14条相似文献,搜索用时 15 毫秒
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Xianhua Wang Guofu Chen Dongfeng Liu Lin Xiu Shuangchen Ruan 《Chinese Journal of Lasers》1992,1(3):193-202
In this paper,complete mode-locking optical pulses have been obtained froman actively mode-locked GaAs/GaAlAs semiconductor laser with grating external cavity.Theshortest optical pulse is 7.3 ps measured by second harmonic generation(SHG)autocorrelator.The repetition rate is 995.12 MHz and the central wavelength is 798.4 nm.The effect ofmodulation frequency,modulation current,and bias current on the optical pulses width areinvestigated. 相似文献
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Yong Lee 《Optical Review》1997,4(2):346-348
A numerical study of the propagation dynamics of ultrashort pulses in a coupled-cavity-type multilayered structure doped with Kerr-type nonlinearity showed that such a structure improves the switching contrast of recently proposed optical-limiting and switching devices consisting of a nonlinear Bragg reflector. 相似文献
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New nonlinear dynamics in a semiconductor laser with optical self—feedback 总被引:1,自引:0,他引:1
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We demonstrate a new kind of instability of the external cavity semiconductor laser,In some parameter regimes,the external cavity system will produce short and strong optical pulses in aperiodic intervals.This instability also shows low-frequency characteristics. 相似文献
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本文给出了在环形光纤外腔光反馈之下半导体激光器频偏特性的小信号分析理论.分析表明,尤其在千兆赫以下的调制频段中,耦合腔相移、内外腔光耦合强度及内外腔光场相位失谐对频偏功率比均有显著影响.可望用作强度调制直接检测高速率、长距离光纤通信系统中的光源. 相似文献
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为指导光子晶体谐振腔的设计,运用3维电磁场仿真软件HFSS模拟了2维光子晶体谐振腔,分析了影响2维光子晶体谐振腔的主要特性参数,主要包括所插介质杆的排列结构、介电常数及其半径和间距。研究表明,在其它条件保持不变时,若增大介质杆半径,则同一模式频率没有同一的变化规律;若增大介质杆介电常数,则出现的规则模式减少,并且没有基模出现,同一个模式,频率明显降低;若增大介质杆间距,则计算的频率间隔减小,对其它参数影响不大,只是同一模式的频率略有减小。 相似文献
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Optical properties of a periodic one-dimensional semiconductor-organic photonic crystal in UV region
Suihu Dang 《Optical Review》2008,15(5):255-258
Optical properties of a one-dimensional semiconductor-organic photonic crystal with periodic AlN/3-octylthiophenes (P3OT)
multilayer structure are exhibited and confirmed by a calculation of the transfer matrix method (TMM). An AlN/P3OT multilayer
structure displays incomplete photonic band gap behavior in the UV region. The AlN/P3OT multilayers with four pairs of 35-nm-AlN
and 35-nm-P3OT layers exhibit a high reflectivity of 89% and less absorption of 10% at a wavelength of about 300 nm. These
results demonstrate the AlN/P3OT multilayer structure could be a good candidate for absolute inhibition of reflection in the
ultraviolet region for a given orientation. 相似文献
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Based on the ray tracing method, the implicit expression of the output spectrum of the extremely short external cavity semiconductor laser (ESECSL) is derived, and the output spectrum and P-I characteristic of the ESECSL are investigated. The results show that: when the length of external cavity is changed at the order of wavelength, the P-I characteristics of the ESECSL will undergo significant changes; with the variation of the external cavity length, the lasing wavelength of ESECSL will behave cyclical jump in the range of 10 nm. Especially, for the external cavity length changed within the range of 40-70 μm, the jump range of the lasing wavelength will reach the maximum. The simulations well agree with the experimental results reported. 相似文献
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A detailed numerical study of dynamical behavior of a semiconductor laser under current modulation and cavity detuning has been performed on the base of four different models of the active medium which take into account direct transitions between ground subbands, transitions with no k-selection rule between ground subbands and contribution of excited subbands in each of the above-mentioned cases. We have shown that different nonlinear regimes (period doubling, chaos, generalized bistability) can be obtained either with cavity detuning from the gain band maximum or near the laser threshold.It has been established that the shape and principal peculiarities of amplitude detuning characteristics are determined by the relation between the current modulation frequency and maximum resonance frequency of the laser.PACS numbers: 05.45.Pq, 42.55.Px, 42.65.Sf 相似文献
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Band gap characteristics of plasma with periodically varying external magnetic field 总被引:1,自引:0,他引:1
The reflectance characteristics of a one-dimensional periodically magnetized plasma structure is studied by using the transfer matrix method. It is found that this system has the band gap characteristics of photonic crystals, so we also name it a plasma photonic crystal. The results show that the gap location and gap width can be controlled by the incident angle. If the external magnetic field is small, the gap location and gap width change significantly with incident angle, while they change only slightly when the external magnetic field is sufficiently large. The collision frequency has little effect on the gap location and gap width while it makes the amplitude of reflectance and transmission decrease. This new type of plasma photonic crystal could have potential applications in designing tunable photonic crystal devices. 相似文献
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用特征矩阵法研究了由正常色散SiO2/TiO2薄膜组成的Fibonacci序列一维光子晶体在可见光波段的传输特性,并与无色散时的传输特性做了对比。结果表明,随序列项数的增加,相应的前一序列的透射谱中透射率较低的凹带逐渐变成禁带,禁带数增加;初始介质是低折射率的SiO2薄膜时比高折射率的TiO2薄膜时各序列的透射谱中的禁带数多,各禁带的宽度和中心波长基本相同;在总厚度一定的条件下,随SiO2薄膜的厚度增大(TiO2薄膜的厚度减小),禁带的宽度减小,禁带的中心波长基本不变;随入射角增大,禁带的中心波长向短波方向移动,禁带宽度变小。在其它相同条件下,无色散时的最宽禁带和最宽禁带的中心波长比有色散时的最宽禁带和最宽禁带的中心波长都有增加。 相似文献