Photonic crystals and microlasers fabricated with low refractive index material

Although the investigation on photonic band gap materials has been done more than two decades, it is still a big challenge to fabricate three-dimensional photonic crystal (PC) possessing wide band gaps in visible range. In this article, we have reviewed recent progresses on fabricating the PC with low refractive index material in visible range. In contrast to the material with large refractive index, it is cheap to use low refractive index material in fabricating the PC and will be greatly beneficial for future industrial productions. The holographic method to fabricate such a PC has been introduced, applying it to the design of the microlaser has also been discussed.     

Experimental study of actively mode-locked semiconductor laser with grating external cavity

In this paper,complete mode-locking optical pulses have been obtained froman actively mode-locked GaAs/GaAlAs semiconductor laser with grating external cavity.Theshortest optical pulse is 7.3 ps measured by second harmonic generation(SHG)autocorrelator.The repetition rate is 995.12 MHz and the central wavelength is 798.4 nm.The effect ofmodulation frequency,modulation current,and bias current on the optical pulses width areinvestigated.     

Propagation Dynamics of Ultrashort Optical Pulses in Nonlinear Coupled-Cavity-Type Multilayered Structures: a Numerical Study

A numerical study of the propagation dynamics of ultrashort pulses in a coupled-cavity-type multilayered structure doped with Kerr-type nonlinearity showed that such a structure improves the switching contrast of recently proposed optical-limiting and switching devices consisting of a nonlinear Bragg reflector.     

New nonlinear dynamics in a semiconductor laser with optical self—feedback

We demonstrate a new kind of instability of the external cavity semiconductor laser,In some parameter regimes,the external cavity system will produce short and strong optical pulses in aperiodic intervals.This instability also shows low-frequency characteristics.     

Experimental Study on Single Frequency Semiconductor Lasers with Fiber Bragg Reflector External Cavity

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光纤环形外腔半导体激光器频偏特性研究

本文给出了在环形光纤外腔光反馈之下半导体激光器频偏特性的小信号分析理论.分析表明,尤其在千兆赫以下的调制频段中,耦合腔相移、内外腔光耦合强度及内外腔光场相位失谐对频偏功率比均有显著影响.可望用作强度调制直接检测高速率、长距离光纤通信系统中的光源.     

一维光子晶体的光学传输特性分析

采用等效F-P腔方法对一维光子晶体进行研究,计算并讨论不同周期数的一维光子晶体对光学传输特性的影响.计算结果表明,一维光子晶体具有光子禁带,表现为对光的高反射率;掺杂的一维光子晶体的光子禁带中央将出现频宽极窄的缺陷态,即光子局域,与复折射率和晶体周期数有密切的关系.所得结果与实验分析一致,证明了方法的有效性和实用性,并为光子晶体的设计提供依据.     

2维光子晶体谐振腔的分析与模拟

 为指导光子晶体谐振腔的设计,运用3维电磁场仿真软件HFSS模拟了2维光子晶体谐振腔,分析了影响2维光子晶体谐振腔的主要特性参数,主要包括所插介质杆的排列结构、介电常数及其半径和间距。研究表明,在其它条件保持不变时,若增大介质杆半径,则同一模式频率没有同一的变化规律;若增大介质杆介电常数,则出现的规则模式减少,并且没有基模出现,同一个模式,频率明显降低;若增大介质杆间距,则计算的频率间隔减小,对其它参数影响不大,只是同一模式的频率略有减小。     

Optical properties of a periodic one-dimensional semiconductor-organic photonic crystal in UV region

Optical properties of a one-dimensional semiconductor-organic photonic crystal with periodic AlN/3-octylthiophenes (P3OT) multilayer structure are exhibited and confirmed by a calculation of the transfer matrix method (TMM). An AlN/P3OT multilayer structure displays incomplete photonic band gap behavior in the UV region. The AlN/P3OT multilayers with four pairs of 35-nm-AlN and 35-nm-P3OT layers exhibit a high reflectivity of 89% and less absorption of 10% at a wavelength of about 300 nm. These results demonstrate the AlN/P3OT multilayer structure could be a good candidate for absolute inhibition of reflection in the ultraviolet region for a given orientation.     

旋转对二维正方晶格介质柱内空结构光子晶体禁带的影响

采用平面波展开的方法计算了三种旋转操作下二维正方晶格各向异性材料(Te)介质柱内空结构光子晶体TE,TM模式能带.讨论了三种旋转操作对TE,TM模式带隙及完全光子禁带的影响.发现TM模式高频带隙与结构的旋转对称性有着密切的关系.而TE模式的带隙不仅受到晶体旋转对称性的影响同时也受到介质在x-y平面分布情况的影响.     

双反馈半导体激光器的混沌特性研究

实验利用双反馈半导体激光器获得了关联维数为3.8的高维混沌光.同时对比分析了双反馈与单反馈两种不同模式产生混沌的区别.结果表明：在反馈强度均为-26 dB时,双反馈产生混沌的关联维数高于单反馈产生混沌的关联维数2.6;双反馈可获得带宽为11 GHz的混沌光,为单反馈产生混沌带宽5.5 GHz的两倍.当双反馈的两个外腔长度不相等时,混沌的自相关曲线能很好的隐藏外腔长度信息,可提高混沌通信的保密性. 关键词： 双反馈 半导体激光器 混沌 带宽     

Studying the extremely short external cavity semiconductor laser with ray tracing method

Based on the ray tracing method, the implicit expression of the output spectrum of the extremely short external cavity semiconductor laser (ESECSL) is derived, and the output spectrum and P-I characteristic of the ESECSL are investigated. The results show that: when the length of external cavity is changed at the order of wavelength, the P-I characteristics of the ESECSL will undergo significant changes; with the variation of the external cavity length, the lasing wavelength of ESECSL will behave cyclical jump in the range of 10 nm. Especially, for the external cavity length changed within the range of 40-70 μm, the jump range of the lasing wavelength will reach the maximum. The simulations well agree with the experimental results reported.     

旋转对二维正方晶格介质柱内空结构光子晶体禁带的影响

采用平面波展开的方法计算了三种旋转操作下二维正方晶格各向异性材料(Te)介质柱内空结构光子晶体TE,TM模式能带.讨论了三种旋转操作对TE,TM模式带隙及完全光子禁带的影响.发现TM模式高频带隙与结构的旋转对称性有着密切的关系.而TE模式的带隙不仅受到晶体旋转对称性的影响同时也受到介质在x-y平面分布情况的影响. 关键词： 二维光子晶体 内空结构 旋转操作 光子带隙     

光纤光栅外腔半导体激光器纵模特性研究

用速率方程对光纤光栅外腔半导体激光器（ＦＢＧ－ＥＣＬ）的静态工作特性进行模拟计算,获得了这些特性同器件结构参数和工作条件的关系。用自行研制的光纤光栅与增透半导体激光器管芯耦合,获得了边模抑制比大于４０ｂＢ、线宽约为０．１ｎｍ的单纵模工作的实验结果,与计算结果基本吻合。     

Generation of Terahertz radiation with two color semiconductor lasers

We discuss and analyze concepts for the generation of tuneable continuous wave terahertz (THz) radiation with two color diode lasers. First, different geometries of two color lasers are reviewed. We show that the THz power of two color lasers in combination with external photomixers becomes sufficient for scanning THz imaging applications when optical amplification with a tapered amplifier is implemented. Then, the concept of direct emission of THz radiation out of a two‐color semiconductor laser is reviewed and the potential of this concept with respect to THz bandwidth and achievable THz power is critically analyzed.     

Nonlinear dynamics of a directly modulated semiconductor laser with cavity detuning

A detailed numerical study of dynamical behavior of a semiconductor laser under current modulation and cavity detuning has been performed on the base of four different models of the active medium which take into account direct transitions between ground subbands, transitions with no k-selection rule between ground subbands and contribution of excited subbands in each of the above-mentioned cases. We have shown that different nonlinear regimes (period doubling, chaos, generalized bistability) can be obtained either with cavity detuning from the gain band maximum or near the laser threshold.It has been established that the shape and principal peculiarities of amplitude detuning characteristics are determined by the relation between the current modulation frequency and maximum resonance frequency of the laser.PACS numbers: 05.45.Pq, 42.55.Px, 42.65.Sf     

基于次谐波调制光注入半导体激光器获取窄线宽微波信号的实验研究

实验研究了处于单周期振荡的光注入半导体激光器在频率等于单周期振荡频率一半的1/2次谐波调制下所产生的微波信号的特性.实验结果显示:在合适的注入条件下,处于单周期(P1)振荡的光注入半导体激光器可输出频率可达26.5 GHz、光谱具有单边带结构的光生微波信号,但微波信号的线宽比较宽(MHz量级);通过采用频率为单周期振荡频率一半的次谐波信号调制光注入半导体激光器,可将微波线宽从十几MHz压缩到几十k Hz.进一步分析了次谐波调制信号的功率以及频率对微波信号的相位噪声的影响,并在由次谐波调制信号的功率和频率构成的参数空间绘制出了能实现次谐波频率锁定的分布区域.     

Band gap characteristics of plasma with periodically varying external magnetic field

The reflectance characteristics of a one-dimensional periodically magnetized plasma structure is studied by using the transfer matrix method. It is found that this system has the band gap characteristics of photonic crystals, so we also name it a plasma photonic crystal. The results show that the gap location and gap width can be controlled by the incident angle. If the external magnetic field is small, the gap location and gap width change significantly with incident angle, while they change only slightly when the external magnetic field is sufficiently large. The collision frequency has little effect on the gap location and gap width while it makes the amplitude of reflectance and transmission decrease. This new type of plasma photonic crystal could have potential applications in designing tunable photonic crystal devices.     

用滑模变结构控制方法实现外腔反馈式半导体激光器的混沌控制

通过增加外腔反馈式半导体激光器的激光反馈时间，使系统处于混沌状态，再采用滑模变结构控制方法实现这种激光器的混沌控制.该方法的优点是系统既能很快地获得稳定的输出激光，又能根据工程需要实现激光输出功率强度的灵活调整.理论分析和数值计算结果表明控制结果具有很强的稳定性和鲁棒性.研究结果对改善实际激光系统稳态输出的快速性、输出功率的灵活可调性和能量转换效率有较好的参考价值. 关键词： 混沌 外腔反馈式半导体激光器 滑模变结构控制 外腔长度