H and P solid-state NMR of trimethylphosphine adsorbed on heteropolytungstate supported on silica

Trimethylphosphine (TMP) has been used as an NMR probe in order to determine the acidity of Keggin-type 12-tungstophosphoric heteropolyacid (HPW), pure and supported on silica, dehydrated at 473 K. Adsorption of TMP on pure dehydrated HPW leads to the formation of trimethylphosphonium ions (TMPH⁺) characteristic of the presence of strong Brönsted acid sites. TMP replaces the water molecules lost by dryness and allows the Keggin secondary structure to recover.Silica interacts with TMP by two kinds of acid sites: with weak acid support sites through the isolated silanol groups and with strong Brönsted acid, which lead to the formation of TMPH⁺, through the hydrogen-bonded silanol groups. Silica only interacts with HPW through its isolated silanol groups.     

Nano-star formation in Al-doped ZnO thin film deposited by dip-dry method and its characterization using atomic force microscopy, electron probe microscopy, photoluminescence and laser Raman spectroscopy

Zinc oxide doped with Al (AZO) thin films were prepared on borosilicate glass substrates by dip and dry technique using sodium zincate bath. Effects of doping on the structural and optical properties of ZnO film were investigated by XRD, EPMA, AFM, optical transmittance, PL and Raman spectroscopy. The band gap for ZnO:Al (5.0 at. wt.%) film was found to be 3.29 eV compared with 3.25 eV band gap for pure ZnO film. Doping with Al introduces aggregation of crystallites to form micro-size clusters affecting the smoothness of the film surface. Al³⁺ ion was found to promote chemisorption of oxygen into the film, which in turn affects the roughness of the sample. Six photoluminescence bands were observed at 390, 419, 449, 480, 525 and 574 nm in the emission spectra. Excitation spectra of ZnO film showed bands at 200, 217, 232 and 328 nm, whereas bands at 200, 235, 257 and 267 nm were observed for ZnO:Al film. On the basis of transitions from conduction band or deep donors (CB, Zn_i or V_OZn_i) to valence band and/or deep acceptor states (VB, V_Zn or O_i or O_Zn), a tentative model has been proposed to explain the PL spectra. Doping with Al³⁺ ions reduced the polar character of the film. This has been confirmed from laser Raman studies.     

Sharp interface immersed-boundary/level-set method for wave–body interactions

A sharp interface Cartesian grid method for the large-eddy simulation of two-phase turbulent flows interacting with moving bodies is presented. The overall approach uses a sharp interface immersed boundary formulation and a level-set/ghost–fluid method for solid–fluid and fluid–fluid interface treatments, respectively. A four-step fractional-step method is used for velocity–pressure coupling, and a Lagrangian dynamic Smagorinsky subgrid-scale model is adopted for large-eddy simulations. A simple contact angle boundary condition treatment that conforms to the immersed boundary formulation is developed. A variety of test cases of different scales ranging from bubble dynamics, water entry and exit, landslide-generated waves, to ship hydrodynamics are performed for validation. Extensions for high Reynolds number ship flows using wall-layer models are also considered.     

Experimental Realization of Arbitrary Accuracy Iterative Phase Estimation Algorithms on Ensemble Quantum Computers

We report the first experimental demonstration of a nuclear phase estimation algorithms. Using feedback and iterations, magnetic resonance （NMR） realization of iterative we experimentally obtain the phase with 6 bits of precision on a two-qubit NMR quantum computer. Furthermore, we experimentally demonstrate the effect of gate noise on the iterative phase estimation algorithm. Our experimental results show that errors of measurements of the phase depend strongly on the precision of coupling gates. This experiment can be used as a benchmark for multi-qubit realizations of quantum information processing and precision measurements.     

Ultra fast melting process in femtosecond laser crystallization of thin a-Si layer

In this paper, we investigated the mechanism of crystallization induced by femtosecond laser irradiation for an amorphous Si (a-Si) thin layer on a crystalline Si (c-Si) substrate. The fundamental, SHG, THG wavelength of a Ti:Sapphire laser was used for the crystallization process. To investigate the processed areas we performed Laser Scanning Microscopy (LSM), Transmission Electron Microscopy (TEM) and Imaging Pump-Probe measurements. Except for 267 nm femtosecond laser irradiation, the crystallization occurred well. The threshold fluences for the crystallization using 800 nm and 400 nm femtosecond laser irradiations were 100 mJ/cm² and 30 mJ/cm², respectively. TEM observation revealed that the crystallization occurred by epitaxial growth from the boundary surface between the a-Si layer and c-Si substrate. The melting depths estimated by Imaging Pump-Probe measurements became shallower when the shorter wavelength was used.     

Nonlinear optical properties of Au/ZnO nanoparticle arrays

The triangular-shaped Au/ZnO nanoparticle arrays were fabricated on fused quartz substrate using nanosphere lithography. The structural characterization of the Au/ZnO nanoparticle arrays was investigated by atomic force microscopy. The absorption peak due to the surface plasmon resonance of Au particles at the wavelength of about 570 nm was observed. The nonlinear optical properties of the nanoparticle arrays were measured using the z-scan method at a wavelength of 532 nm with pulse duration of 10 ns. The real and imaginary part of third-order nonlinear optical susceptibility, Re χ⁽³⁾ and Im χ⁽³⁾, were determined to be 1.15 × 10⁻⁶ and −5.36 × 10⁻⁷ esu, respectively. The results show that the Au/ZnO nanoparticle arrays have great potential for future optical devices.     

Microwave radiation induced magneto-oscillations in the longitudinal and transverse resistance of a two-dimensional electron gas

We confirm the existence of magneto-resistance oscillations in a microwave-irradiated two-dimensional electron gas, first reported in a series of papers by Zudov et al. [Phys. Rev. B 64 (2001) 201311] and Mani et al. [Nature (London) 420 (2002) 646]. In our experiments, on a sample with a moderate mobility, the microwave induced oscillations are observed not only in the longitudinal but also in the transverse-resistance (Hall resistance). The phase of the oscillations is such that the decrease (increase) in the longitudinal resistance is accompanied by an increase (decrease) in the absolute value of the Hall resistance. We believe that these new results provide valuable new information to better understand the origin of this interesting phenomenon.     

Finite size effect on critical transition temperature of superconductive nanosolids

A simple and unified model is developed for finite size effect on the critical transition temperature of superconductive nanosolids, which is based on the size-dependent Debye temperature of crystals within the McMillan expression. In the model, two material and structure dependent parameters of D₀ and α are used, which, respectively, are the critical size at which all atoms of a low-dimensional material are located on its surface, and the ratio of the mean square vibrational amplitude between surface atoms and interior atoms, In light of this model, the critical transition temperatures of superconductive nanosolids can decrease or increase with the dropping size of nanosolids depending on the bond strength changes of interfacial atoms. The predicated results are consistent with the available experimental results for superconductors MgB₂ and Nb thin films, Bi and Pb granular thin films and nanoparticles, Al thin films and nanoparticles.     

Observation of higher magnetization on the substitution of Al for Co in La2MnCoO6

Upon substitution of non-magnetic Al³⁺ for diamagnetic, low-spin, Co³⁺ in ferromagnetic La₂MnCoO₆, the ferromagnetic moment, measured at 82 K and 15 kOe, is found to increase initially with Al content and then decreases, though the magnetic transition temperature decreases continuously on increasing x in La₂MnCo_1−xAl_xO₆.     

Magnetic phase transitions in TbAuIn compound

Magnetic properties of frustrated antiferromagnet TbAuIn are investigated by AC susceptibility, resistivity as well as specific heat measurements. In temperature dependence of the susceptibility two anomalies are visible, one at 33 K and another at 48 K. According to neutron diffraction studies the Néel temperature is 35 K. The second anomaly in the AC susceptibility seems to be attributed to antiferromagnetic cluster-glass state of Tb magnetic moments. The resistivity measurements confirm that TbAuIn exhibits long-range magnetic order below 35 K, moreover they reveal an anomalous behaviour above that temperature. However in the temperature dependence of the specific heat only one anomaly at 30 K is visible. The low temperature behaviour of susceptibility, resistivity and specific heat of the investigated antiferromagnetic material can be described, with a good accuracy, within the spin-wave theory with linear dispersion relation.     

Causality detection based on information-theoretic approaches in time series analysis

Synchronization, a basic nonlinear phenomenon, is widely observed in diverse complex systems studied in physical, biological and other natural sciences, as well as in social sciences, economy and finance. While studying such complex systems, it is important not only to detect synchronized states, but also to identify causal relationships (i.e. who drives whom) between concerned (sub) systems. The knowledge of information-theoretic measures (i.e. mutual information, conditional entropy) is essential for the analysis of information flow between two systems or between constituent subsystems of a complex system. However, the estimation of these measures from a set of finite samples is not trivial. The current extensive literatures on entropy and mutual information estimation provides a wide variety of approaches, from approximation-statistical, studying rate of convergence or consistency of an estimator for a general distribution, over learning algorithms operating on partitioned data space to heuristical approaches. The aim of this paper is to provide a detailed overview of information theoretic approaches for measuring causal influence in multivariate time series and to focus on diverse approaches to the entropy and mutual information estimation.     

Post-treatment of mesoporous material with high temperature for synthesis super-microporous materials with enhanced hydrothermal stability

Super-microporous silicon material with high hydrothermal stability denoted as MCM-48-T has been prepared from mesoporous MCM-48 by high temperature treatment. The structural and chemical property of MCM-48-T has been characterized by variety of techniques such as small-angle X-ray diffraction (XRD), transmission electron microscopy (TEM), N₂ adsorption-desorption, infrared spectroscopy (IR) and ²⁹Si MAS NMR, etc. The results showed that Si-OH groups are forced to condense by the treatment of high temperature and the pore size of MCM-48-T is around 1.03 nm in the super-microporous range. Besides, the ratio of Q⁴/Q³ increases considerably. Compared with the original material (MCM-48), the hydrothermal stability of MCM-48-T has significantly enhanced.     

Investigation of GaN layer grown on different low misoriented sapphire by MOCVD

GaN layer on c-plane misoriented sapphire, grown by metal organic chemical vapor deposition, has been studied. It was observed that the random and non-uniform distribution of the step was caused by the step reconstruction for GaN grown on 0° sapphire by atomic force microscopy. The image quality parameter analysis of electron back-scatter diffraction indicated that the strains were reduced for GaN grown on 0.2° and 0.3° sapphire, and optical and electrical properties were improved. The electroluminescence intensity of LED grown on 0.2° and 0.3° sapphire was 2 times as that of 0° sapphire.     

Crystalline and photoluminescence characteristics of YVO4:Sm thin films grown by pulsed laser deposition under oxygen pressure

YVO₄:Sm³⁺ films were deposited on Al₂O₃ (0 0 0 1) substrates at various oxygen pressures changing from 13.3 to 46.6 Pa by using the pulsed laser deposition method. The crystallinity and surface morphology of these films were investigated by means of X-ray diffraction (XRD) and atomic force microscopy (AFM), respectively. The XRD pattern confirmed that YVO₄:Sm³⁺ film has zircon structure and the AFM study revealed that the films consist of homogeneous grains ranging from 100 to 400 nm. The room temperature photoluminescence (PL) spectra showed that the emitted radiation was dominated by a reddish-orange emission peak at 602 nm radiating from the transition of (⁴G_5/2→⁶H_7/2). The crystallinity, surface morphology, and photoluminescence spectra of thin-film phosphors were highly dependent on the deposition conditions, in particular, the substrate temperature. The surface roughness and photoluminescence intensity of these films showed similar behavior as a function of oxygen pressure.     

Exciton photoluminescence, photoconductivity and absorption in GaSe0.9Te0.1 alloy crystals

The photoluminescence, photoconductivity and absorption in GaSe_0.9Te_0.1 alloy crystals have been investigated as a function of temperature and external electric field. It has been observed that the exciton peaks shift to lower energy in GaSe_0.9Te_0.1 alloy crystals compared to GaSe crystals. The long wavelength tails of interband photoluminescence, photoconductivity and absorption spectra are determined by the free exciton states and show an Urbach-Martienssen-type dependence to the photon energy. The maxima of the extrinsic photoluminescence and photoconductivity spectra were found to be determined by the acceptor centers with an energy of E_A=E_V+0.19 eV formed by the polytypism and defects complexes that include Se and Te anions.     

Effect of thermal treatment on linear optical properties of Cu nanoclusters

Silica glass was implanted with 50 keV Cu⁺ ions at various fluences from 6×10¹⁵ to 8×10¹⁶ ions/cm² and thermally-annealed in air between room temperature to 1200 °C. UV/visible spectroscopy measurements reveal absorption bands at characteristics surface plasmon resonance (SPR) frequencies, signifying the formation of copper colloids in silica, even without thermal treatments. Such copper nanoclusters can be attributed to the relatively high mobility of copper atoms, even at ambient conditions. Using the equation derived from the framework of free-electron theory, the average radii of the Cu particles were found to be in the range 2-4 nm from the experimental surface plasmon absorption peaks. Radioluminescence (RL) spectra exhibited broad bands at 410 and 530 nm, associated with the presence of Cu⁺ ions in the as-implanted samples. The effect of thermal annealing in air on absorption and emission spectra of these Cu-implanted samples, as well as the formation of copper nanoclusters from original Cu⁺ ions, is discussed.     

Optical properties of Tm-doped GaSe single crystals

Optical properties of Tm-doped GaSe single crystals were investigated by measurements of optical absorption and photoluminescence. The single crystals were grown by the Bridgman technique. The X-ray diffraction analysis revealed that the single crystals were in the ε-type GaSe phase. The optical absorption spectra showed a sharp absorption peak at 582 nm near the band edge, which is due to direct free exciton. The temperature dependence of the energy of the exciton absorption peak was well fitted by the Varshni relation. In the photoluminescence spectrum at 10 K, we observed a very weak emission peak at 586 nm, a relatively strong emission peak centered at 613 nm, and several sharp and narrow emission peaks in the 790-840 nm region. The two emission peaks at 586 and 613 nm were associated with intrinsic emission lines due to direct free exciton and indirect bound exciton. The emission peaks in the 790-840 nm region, which were related to extrinsic emission, were assigned as due to the ³F₄→³H₆ transition of Tm³⁺ ions with a low symmetry of D₃ in the host lattice.     

Characterization of DNA chips on the molecular scale before and after hybridization with an atomic force microscope

Using two different 25-mer oligonucleotide probes covalently grafted on a silicon substrate, we demonstrate how efficient atomic force microscopy (AFM) can be for monitoring each step of DNA chip preparation: from probe immobilization to hybridization on the molecular scale. We observed the probe-molecule organization on the chip after immobilization, and the target molecules, which hybridized with probes could be individually identified. This article presents a method of straightforwardly identifying not only single and double DNA strands, but also, and more significantly, the hybridized part on them.     

Photoluminescence scanning on InAs/InGaAs quantum dot structures

The photoluminescence spectra of InAs quantum dots (QDs) embedded into four types of In_xGa_1−xAs/GaAs (x = 0.10, 0.15, 0.20 and 0.25) multi quantum well MBE structures have been investigated at 300 K in dependence on the QD position on the wafer. PL mapping was performed with 325 nm HeCd laser (35 mW) focused down to 200 μm (110 W/cm²) as the excitation source. The structures with x = 0.15 In/Ga composition in the In_xGa_1−xAs capping layer exhibited the maximum photoluminescence intensity. Strong inhomogeneity of the PL intensity is observed by mapping samples with the In/Ga composition of x ≥ 0.20-0.25. The reduction of the PL intensity is accompanied by a gradual “blue” shift of the luminescence maximum at 300 K as follows from the quantum dot PL mapping. The mechanism of this effect has been analyzed. PL peak shifts versus capping layer composition are discussed as well.