Possibility of32Si production as a by-product of32P radioisotope production process

Currently used³²P production process was indicated to be a potential resource of³²Si production. The³²Si yielded by³²S(n, p)³²P(n, p)³²Si reaction was found mainly in³²P product solution rather than sulphur distillation crucible. By using the reported values of cross section of³²P(n, p)³²Si reaction and half-life of³²Si, the yield of³²Si in sulphur target was calculated. A possible ion exchange method was presented for the recovery of³²Si from the³²P production process.     

DSC analysis of the effect of processing technique on the dissolution/precipitation reactions in a hypereutectic Al−Si alloy

In the present study, the effect of primary processing route on the dissolution and precipitation reactions in a commercial Al?Si alloy (designated as A390) is investigated using differential scanning calorimetry (DSC). The Al?Si alloy selected for the present investigation was processed using conventional casting and spray atomization and deposition routes. The results of differential scanning calorimetry conducted on the as-processed samples indicated no significant dissolution reaction for the as-cast A390 alloy when compared to the similar results obtained for as-spray atomized and deposited samples. However, the thermal analysis conducted on the solutionized cast and spray deposited samples exhibited no significant difference in the kinetics of precipitation reactions. The results of the differential thermal analyses were finally rationalized in terms of observed microstructural features.     

Fe68Si32合金液态结构与固态组织的相关性

利用液态X射线衍射仪研究了Fe68Si32合金的液态结构,获得了结构因子、径向分布函数、原子间的最近邻距离和配位数.结果表明,在1250～1450℃范围内液态合金的最近邻距离为0.259～0.260nm,配位数为10.3(±0.2);液态合金的结构因子在Q=15.5nm-1处有一明显的预峰存在.根据预峰的特性,建立了Fe68Si32熔体的结构模型,即体心立方结构的有序Fe3Si原子团以共面的方式形成Fe3Si面心立方超结构(DO3);合金在1250℃的径向分布函数的Gauss分解结果与合金的面心立方模型吻合较好.预峰的产生是面心立方超结构原子团中Si原子之间相互关联的外在表现.Fe68Si32合金的固态X射线衍射显示合金中含有Fe3Si相,而且其特征峰与合金的结构因子的峰位基本一致,表明Fe68Si32合金的液固态结构之间联系紧密.     

锂离子电池用非晶态Si/Al/Si薄膜负极材料

采用磁控溅射法在铜箔集流体上沉积了具有“三明治”结构的Si/Al/Si三层薄膜. 高分辨率透射电镜(HRTEM)和选区电子衍射(SAED)分析结果表明, 该薄膜为非晶态. 扫描电镜(SEM)和能量散射X射线能谱(EDS)结果表明, 该薄膜总厚度约为4.0 μm, 循环100周后体积膨胀率为225％. 在1.5~0.005 V(vs. Li+/Li)和0.1 mA/cm2条件下, 该薄膜电极前5周衰减较快, 而后趋于平缓. 首次放锂量为0.88 mA·h/cm2, 循环5周后, 放锂量为0.71 mA·h/cm2, 100周后的放锂量仍能保持在0.61 mA·h/cm2. 研究结果表明, Al的加入有效地抑制了Si膜的体积膨胀, 使之具有良好的循环寿命. 交流阻抗结果表明, 随着循环次数的增加, 极化电阻首先从46.9 Ω·cm2(第1周)降低到36.2 Ω·cm2(第50周), 而后又升高到47.3 Ω·cm2(第100周). Al的加入提高了Si膜的导电性, 有效地降低了其极化电阻, 改善了Si膜的电压滞后现象.     

Solid-state interdiffusion mechanism in strained Si1–xGex/Si heterostructures

The interdiffusion in a low-strained Si_0.93Ge_0.07/Si epilayer was analyzed by double-crystal X-ray diffraction. The interdiffusion was characterized by a low diffusion barrier of 1.81 eV with a diffusion constant of 4.3 × 10⁻⁵ cm²/sec, which indicates correlation with the stacking fault generated by the homoepitaxial growth of the Si layer prior to the growth of the strained SiGe layer. At the very low-strained layer, the driving force causing the interdiffusion is the concentration gradient, and the mechanism is self-diffusion of Si. Furthermore, the interdiffusion mechanisms were classified into three groups, depending on the Ge mole fraction x. For x < 0.2, the diffusion process in the SiGe alloy is similar to a self-diffusion of Si atoms, while, for 0.2 < x < 0.4, Ge atoms prefer to be diffused out from the alloy. Finally, for x > 0.4, Si atoms can be diffused into the alloy. Received: 22 April 1997 / Accepted: 4 June 1997     

Surface oxidation states in Si/SiO2 nanostructures prepared from Si/SiO2 mixtures

Silica nanospheres have been produced by a novel technique where surface Si oxidation states can be adjusted using the ratio of metalloid ions/metalloid atoms in the starting mixture. When the proportions of Si4+/Si0 are equal in the synthesis, the resulting solid is considerably more reactive than Cab-O-Sil toward the phenol hydroxylation reaction and the surface shows an average Si oxidation state of +3. On the other hand, those silica nanospheres, produced from a mixture of Si4+/Si0 = 0.25, showed a lower reactivity comparable to that of Cab-O-Sil which XPS demonstrates has a surprisingly low average Si oxidation state close to +1. We speculate that the silicon surface oxidation state and the number of surface silanol groups play important roles in determining the activity of the solid toward the phenol hydroxylation reaction. In expanding our earlier report4 on the copper-silica system, we establish that the surface chemistry of the silica nanospheres is apparently different from that of fumed, amorphous silica. These results suggest that we are developing a technique that can be generalized to create supported, mixed metal oxides having tunable average surface oxidation states.     

Difference FTIR spectroscopy of folded phonons in Si/Si1−xGex superlattices

A home-made slow-scan Fourier spectrometer was adapted in the far infrared (10–100 cm^–1) to investigate strained-layer Si/Si_0.5Ge_0.5 superlattices (=SLs) with modulation periodsD=120 Å, 40 Å at liquid helium temperature. The small variations of reflectivity (10^–3) were detected against the large background by modulating the temperature of the sample using a chopped near infrared light emitting diode. The resulting change of sample temperature causes a variable population of the lowest acoustic phonon branch to largerq-values, and a large fraction of the zone folded phonon dispersion (q/D) can be measured by observing difference phonon processes. The measurements outline important SL-properties (modulation periods, phonon dispersion, interface quality and strain effects). X-ray diffraction analysis confirms the FTIR-results.     

Grazing incidence X-ray absorption spectra of (Si/W) 100/Si multilayer

Tungsten (W) M_III X-ray absorption spectra of a periodic multilayer, (Si/W)₁₀₀/Si, were measured with the change of X-ray grazing angle using sample current method. Under not total reflection condition, the absorbance changed little except at W M_III absorption edge. While under the total reflection condition, the absorbance increased with the increase of the X-ray energy and the increment changed from low to high at the W M_III absorption edge. This result reflected the variation of the X-ray evanescent wavelength caused by the absorption effect of W.     

锂离子电池用“三明治”型Si/Fe/Si薄膜负极材料的制备及其性能

采用磁控溅射法在铜箔集流体上沉积得到了具有“三明治”结构的Si/Fe/Si薄膜. 高分辨率透射电镜(HRTEM)和选区电子衍射(SAED)分析表明, 该薄膜为非晶态. 扫描电镜(SEM)和能量散射X射线能谱(EDXS)结果表明, 该薄膜循环前总厚度为3.2 μm, 循环200 周后体积膨胀率为265%. 在1.5-0.005 V(vs Li+/Li)和0.1 mA·cm-2条件下, 该薄膜电极首次吸锂量为1.85 mAh·cm-2, 70周后放锂量达最大值0.84 mAh·cm-2, 200周后放锂量仍维持在0.55 mAh·cm-2, 为最高放锂量的66%. 惰性材料铁的加入一方面提高了薄膜的导电性和电极的面积比容量, 有效抑制了电压滞后效应; 另一方面有效抑制了活性物质硅的体积膨胀, 保持了薄膜较好的循环充、放电性能.     

Periodic precipitation of silver chromate/dichromate in gelatin

The spatial and temporal evolution of silver chromate/dichromate Liesegang Rings (LR) in gelatin is studied microdensitometrically and microscopically. The analysis of the distribution of various ionic species in dichromate solutions leads to a notion of the possibility of both silver chromate and silver dichromate precipitation. A simple mathematical model of diffusion in thin layers has been developed. The results of the turbidity front progression measurements are consistent with this model and, together with the secondary structure observations, support the postnucleation hypothesis of primary LR formation.     

Chemistry of organosilicon compounds XCVI. The SiSi/SiSi Metathesis reaction catalyzed by palladium complexes

1,1,2,2-Tetramethyl-1,2-disilacyclopentane undergoes the SiSi/SiSi metathesis reaction with vinyl- or ethynyl-substituted disilanes in the presence of a palladium complex.     

Experimental and theoretical investigation on binary semiconductor clusters of B/Si and Al/Si

ASi (A = B and Al; n = 1–6) binary cluster anions were generated by laser ablation of samples composed of mixtures of Si and A (A = B and Al), and studied in the gas phase by tandem time‐of‐flight mass spectrometry. Some abundant ions are present in the mass spectrum, indicating that the clusters with these ions have stable structures. The structures of ASi clusters were investigated theoretically by the density functional theory (DFT) method and the energetically lowest‐lying structures were obtained. The binary clusters BSi and AlSi, with the same number of n, share different geometric structures except for ASi with n = 1 and 6, which have the same geometric structures in the ground state. For all the anionic clusters ASi, the lower spin state is lower in energy than the higher spin state in their optimized structures except for the linear ASi^? anions, for which the triplet state is lower in energy than the singlet. Calculations of the bonding energy (BE), energy gain (Δ) and HOMO‐LUMO energy gaps confirm that the cluster ASi has a very stable structure, which agrees well with the experimental results. Copyright © 2007 John Wiley & Sons, Ltd.