Some peculiarities of the EPR spectra of radiation-induced defects in LiF and NaF crystals

To refine the structure of radiation-induced defects, a comparison is made of the EPR spectra of LiF and NaF crystals with various constituent impurities γ-irradiated with different doses, as well as the experimentally measured and calculated intensity distributions of HFS lines in the EPR spectra of these crystals. It is shown that the F-centers, whose model represents an ionized quasimolecule consisting of two metal atoms on each side of a halide vacancy, are responsible for the broad band observed independently of the impurity composition of the crystals and irradiation dose, while the HFS is caused by defects based on interstitial halide atoms. Translated from Zhurnal Prikladnoi Spektroskopii, Vol. 65, No. 3, pp. 455–459, May–June, 1998.     

Infrared filters and analyzers of the composition of substances based on them

Results of investigations on designing band dispersion and dispersion-interference filters for the 4–30 μm IR range and cutoff filters for the 50–300 μm region are presented. Analyzers of the composition of a substance that are designed on the basis of band IR filters and analysis procedures are described. Institute of Molecular and Atomic Physics, National Academy of Sciences of Belarus, 70, F. Skorina Ave., Minsk, 220072, Belarus. Translated from Zhurnal Prikladnoi Spektroskopii, Vol. 65, No. 5, pp. 734–744, September–October, 1998.     

Band structure of electronic levels and the formation of the fluorescence spectra of polar compounds in polar media

The paper sets out a statistical theory of the effect exerted by interactions of constant dipoles in solutions on the fluorescence spectra of polar compounds. The theory is based on the concept of band structure of the electronic levels of a polar impurity (dissolved) molecule in polar media. Institute of Molecular and Atomic Physics, Academy of Sciences of Belarus, 70, F. Skorina Ave., Minsk, 220072, Belarus. Translated from Zhurnal Prikladnoi Spektroskopii, Vol. 64, No. 2, pp. 209–216, March–April, 1997.     

A resonance-reman-scattering multifrequency spectrometer for investigating excited states of molecules and photoinduced high-rate processes

A resonance-Raman-scattering multifrequency laser spectrometer operating in a wide spectral range (355–750 nm) and making possible the recording of both stationary Raman spectra and spectra with a time resolution of up to 100 psec in the time interval of 0–50 nsec has been developed. The spectrometer has been used with advantage for the study of the excited states of molecules of metalloporphyrins in solutions and processes of interaction of model metalloporphyrins with DNA and DNA-modeling polynucleotides. To whom correspondence should be addressed. B. I. Stepanov Institute of Physics, National Academy of Sciences of Belarus 68, F. Skorina Ave., Minsk, 210072, Belarus. Translated from Zhurnal Prikladnoi Spektroskopii, Vol. 66, No. 5, pp. 726–733, September–October, 1999.     

Influence of the iodine vapor pressure on the output characteristics of a UV low-pressure gas-discharge lamp

The influence of the iodine vapor pressure on the output characteristics of a UV lamp pumped by a longitudinal glow discharge is studied. The lamp is filled with a helium-iodine mixture to a pressure of 100–1500 Pa. In the spectral range 320–360 nm, the I₂(D′ → A′) band with a peak at 342 nm prevails, while in the bactericidal range, iodine atomic lines at 183.0 and 206.2 nm dominate. The power of the UV lamp is optimized according to the iodine vapor pressure and working mixture composition by numerical simulation.     

Study of phase transformations in the Si67Fe33 thin-film system upon steady-state annealing

The elemental composition and features of structural and phase transformations in the Si-Fe-Si thin-film system (50–30–50 nm) upon steady-state annealing are studied as functions of the temperature and treatment time by energy-dispersive microanalysis and electron diffraction methods. Optimum annealing parameters for the formation of iron silicide FeSi and disilicide β-FeSi₂ are determined.     

Luminescence of silicon films on sapphire irradiated with high-energy particles

Using low-temperature (4.2–78 K) photoluminescence, we study the processes of defect formation in silicon films on sapphire irradiated with high-energy particles (electrons, γ-quanta of⁶⁰Co). It is established that carbon atoms, as a residual process impurity, participate in the formation of luminescence centers stable up to annealing temperatures of about 550 K. For carbon-containing centers we reveal a shift in the spectral lines relative to their position in spectra of single-crystal silicon. It is proposed that this spectral shift is associated with the presence of internal stresses of about 5·10⁸ N/m² in the silicon films. Institute of Solid-State Physics and Semiconductors, National Academy of Sciences of Belarus, 17, P. Brovka Str., Minsk, 220072, Belarus. Translated from Zhurnal Prikladnoi Spektroskefii, Vol. 66, No. 3, pp. 383–386, May–June, 1999.     

Impurity Cu+ centers in LiF single crystals

LiF single crystals with copper impurity (0.0004–0.002%) have been grown by the Czochralski method and investigated. The luminescence, excitation, and optical absorption spectra have been recorded. The luminescence spectrum contains a band at 450 nm upon 250-nm excitation. This band is attributed to Cu⁺ centers in the samples grown. The mechanisms of capture and recombination during thermoluminescence are considered.     

Investigation of dosimetric properties of barium and strontium dithionates

An investigation is made of the dosimetric properties of proposed spin-resonance γ-radiation dose meters based on Ba and Sr dithionates. Their operating range (0.1 Gy−50 kGy for Ba dithionate and 0.2 Gy−80 kGy for Sr dithionate) is established. Their advantages over the EPR/L-α dose meter are discussed: the narrow isotropic EPR signal, higher radiation sensitivity, large range of linear response. Conditions of storage and use of dithionate-based dose meters (temperature of 15–25°C, relative air humidity no more than 80%) are determined. Institute of Physical Organic Chemistry of the National Academy of Sciences of Belarus, 13, Surganov St., Minsk, 220072, Belarus. Translated from Zhurnal Prikladnoi Spektroskopii, Vol. 65, No. 3, pp. 372–376, May–June, 1998.     

Influence of electrolyte composition on photoluminescent properties of anodic aluminum oxide

Luminescent properties of anodic alumina fabricated in anodizing solutions containing oxalic, sulfuric, and phosphoric acids in addition to those modified by thermal annealing are investigated. Comparison of the obtained data shows that F⁺-centers are responsible for the luminescence band at 390 nm. The intense photoluminescence band of porous anodic alumina substrates at 450–500 nm is associated with oxalate anions. __________ Translated from Zhurnal Prikladnoi Spektroskopii, Vol. 75, No. 2, pp. 208–212, March–April, 2008.     

Role of highly efficient collisions in collisional transfer of vibrational energy in benzophenone-foreign gas mixtures

Collisional losses of vibrational energy in mixtures of benzophenone excited by nitrogen laser radiation (λ=337 nm) and foreign gases (Ar, Kr, SF₆, C₅H₁₂) were studied by time-resolved delayed luminescence. It is established that the intensities and rates of decay of the fast and slow components of delayed luminescence can be used to evaluate the characteristics of V–V– and V–T–transfer of vibrational energy. For the V-V-process, the efficiencies and mean energies transferred in a collision are determined. It is shown that in the mixture with multiatomic gases, vibrational equilibrium is reached after a few collisions, the number of which decreases as the molecule of the foreign gas becomes more complicated. The V–V–process is characterized by high efficiencies of collisions typical for “supercollisions”. The experimental characteristics of V-V-transfer correlate well with ergodic transfer of vibrational energy predicted by statistical theories. 0120 0126 V 3 Institute of Molecular and Atomic Physics of the National Academy of Science of Belarus, 70, F. Skorina Ave., Minsk, 220072, Belarus. Translated from Zhurnal Prikladnoi Spektroskopii, Vol. 65, No. 3, pp. 340–345, May–June, 1998.     

Effect of heat treatment and concentration of Mn and Fe on the structure of borate glass

We have studied the magneto-optic Faraday effect (FE) and electron paramagnetic resonance (EPR) in an aluminum potassium borate glass containing Fe oxides as an impurity in a concentration of 1.5 mass % and Mn impurity in variable concentration from 0 to 1.2 mass %. When manganese oxide is added to the glass composition, the paramagnetic contribution to the Faraday effect increases more slowly than the change in the total concentration of paramagnetic ions, which allows us to hypothesize the appearance of clusters in which the paramagnetic ions are coupled by antiferromagnetic interactions. Formation of clusters upon addition of manganese oxide is confirmed by the change in the nature of the EPR spectra, where we observe a manganese concentration dependence of the distribution of iron atoms with respect to the different positions in the glass matrix. Heat treatment leads to a strong increase in the Faraday effect and a change in the spectral dependences of the Faraday effect and the EPR, which is explained by enlargement of the clusters and appearance of nanoparticles. __________ Translated from Zhurnal Prikladnoi Spektroskopii, Vol. 73, No. 3, pp. 354–358, May–June, 2006.     

Analysis of the conformation composition of ethane-bisporphyrin solutions from absorption spectra in the region of the soret band

It is found that in absorption spectra of porphyrin dimers linked by a flexible bridge, the shape of the Soret band strongly depends on the solvent, which is explained by differences in the conformation composition of the dimers studied. The conformation composition was analyzed with the deconvolution method, which made it possible to resolve and sharpen all components of the complex contour, of the Soret band. Using different solvents, we studied changes in the behavior of every elementary band with a model of exciton (dipole-dipole) interaction and found that in all the solutions this dimer occurred in the form of face-to-face and side-to-side conformers. The relative content of face-to-face conformation markedly increased with the polarity of the solvent. Institute of Molecular and Atomic Physics, Academy of Sciences of Belarus, 70, F. Skorina Ave., Minsk, 220072, Belarus. Translated from Zhurnal Prikladnoi Spektroskopii, Vol. 64, No. 6, pp. 716–723, November–December, 1997.     

Luminescence and absorption of divalent ytterbium ion in yttrium-aluminum garnet ceramics

Strong absorption bands at 280, 385, and 640 nm; a pulsed cathodoluminescence band with peaks at 325 and 520 nm and a dip at 385 nm; and a structured luminescence band in the range of 591–711 nm composed of four pair lines and having a dip near 640 nm have been observed in the spectra of yttrium-aluminum garnet ceramics activated with ytterbium (10 mol %) and subjected to vacuum sintering at a temperature of 1800°C. It is shown that these spectral features are absorption and luminescence bands of divalent ytterbium ions with the 4f ¹³6s electron configuration of the ground state. These ions occupy the cubic site that is formed under conditions of oxygen deficit and disappears when the latter is removed during annealing ceramics in air.     

Luminescence of complex organic molecules upon electron excitation

Pesults of investigation of the luminescence of complex organic compounds upon excitation with electrons of various energies are reported. Data on spectra of energy losses of electrons, fluorescence excitation cross sections and functions, fluorescence emission spectra, fluorescence kinetics, polarization, and energy yield, effects of impurity gases, and theoretical analysis of the processes taking place in the system are presented. Results of investigation of the luminescence of complex molecules in electric discharges (dc, pulsed, high-frequency, non-self-maintained, and plasma-beam) and in a condensed state (solutions, molecular crystals, and thin solid films) are discussed. Institute of Molecular and Atomic Physics, National Academy of Sciences of Belarus, 70, F. Skorina Ave., Minsk 220072, Belarus. Transtated from Zhurnal Prikladnoi Spektroskopii, Vol. 65, No. 5, pp. 694–708, September–October, 1998.     

Influence of isovalent substitutions on absorption spectra of orthoferrities

The role of impurity ions in formation of the optical properties of rare-earth orthoferrites is investigated. Optical spectra of the substituted against unsubstituted orthoferrites are presented. The influence of different isovalent substitutions on the optical absorption of orthoferrites that are promising for magnetooptics is studied. Institute of Solid-State and Semiconductor Physics of the Academy of Sciences of Belarus, 17, P. Brovka St., Minsk, 220072, Belarus. Translated from zhurnal Prikladnoi Spektroskopii, Vol. 64, No. 5, pp. 642–645, September–October, 1997.     

Electronic structure at rubrene metal interfaces

Many studies have been done on low energy (1–200 keV) and high dose (10¹⁶–10¹⁷) implantation of Mn in GaAs. This study is an attempt to incorporate Mn ions in GaAs through implantation of 1 MeV Mn⁺¹ ions in semi-insulating GaAs substrates at doses of 3×10¹⁵/cm² and subsequent annealing. This was done to find out if any alloy of Mn–Ga–As, or binary compounds of Mn–Ga or Mn–As form due to annealing of Mn⁺¹ ions implanted in GaAs substrates. High Resolution XRD (HRXRD) performed before annealing shows a possibility of Ga–Mn–As alloy formation, and after annealing at 800°C, except for GaAs main peaks no other phase peaks were detected. Scanning electron microscopy (SEM) shows nanostructures of various dimensions which are thought to be formed due to the defects generated due to implantation. Fourier Transform Infrared (FTIR) study shows the shift in bandgap due to Mn doping. Raman spectroscopy shows the red shift in LO and TO peak positions of GaAs after annealing, which indicates the presence of disorder and damage due to implantation. Resistivity measurement shows a thermally activated semiconductor character of charge conduction with an activation energy of 51 meV and this activation may have occurred through the transitions from impurity band to valence band. Large positive (∼25%) magnetoresistance and a mixture of ferromagnetic and paramagnetic behavior obtained in the magnetization measurement indicate the presence of ferromagnetic MnAs nanoclusters embedded in paramagnetic GaAs:Mn matrix.     

Optical parameters and photoluminescence of cadmium-doped epitaxial Pb1−xSnxTe films

Barium fluoride (111) cleaved surfaces have been used with the hot-wall method to grow epitaxial Pb_1−xSn_xTe films from source materials either undoped or doped with 0.1, 0.5, or 1 at. % cadmium and having x=0.2. The absorption in the wavelength range 2–13 μm has been measured together with the spectral dependence of the photoluminescence. The cadmium affects the optical width of the forbidden band and the high-frequency dielectric constant, as well as the photoluminescence intensity. The optical absorption spectra of the doped epitaxial films contain additional absorption bands due to the impurity level in the forbidden band. The position of the impurity level has been determined and the shift in it relative to the bottom of the conduction band as the temperature is reduced. Materials Science Institute, National Academy of Sciences of Ukraine. Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 5, pp. 8–11, May, 1996.     

Control of the shape and duration of a laser pulse in the case of nonlinear total internal reflection

A nonlinear device based on nonlinear total internal reflection is suggested which provides a more than ten-fold shortening of the laser pulse and smooth variation of the pulse duration due to double reflection from the interface between transparent and absorbing media. Results are presented for the shape and duration of the pulse components that have been reflected and transmitted by the interface. B. I. Stepanov Institute of Physics, Academy of Sciences of Belarus, 70, F. Skorina Ave., 220072, Minsk, Belarus. Translated from Zhurnal Prikladnoi Spektroskopii, Vol. 64, No. 3, pp. 325–328, May–June, 1997.     

Synthesis and Optical Characterization of CdS Nanowires by Chemical Process

Cadmium sulfide (CdS) nanostructured materials were synthesized by a wet chemical route without using any capping agent. X-ray diffraction pattern showed the typical interplanar spacings corresponding to the cubic phase of CdS. Transmission electron microscopy studies showed the nanowires formation with length in the range 0.1–1.5 μm and the diameter 25–30 nm. UV–visible optical spectroscopy study was carried out to determine the bandgap of the nanostructured CdS thin films and it showed blue shift with respect to the bulk value. Variation of band gap energies with annealing temperature was also studied in detail. Room temperature photoluminescence of the nano-CdS films was measured and the spectrum showed a broad band centered at ~567 nm, which originated from trap states existing in the forbidden energy gap.