Effect of carbon powder thermal activation on characteristics of supercapacitor electrodes

The capacitors are increasingly being used as energy storage devices in various power systems. The scientists of the world are trying to maximize the electrical capacity of the supercapacitors. This research aims to use plasma spray technology in order to develop carbon electrodes with carbon powder thermally treated in the temperatures ranging from 100 °C to 900 °C in the environment of argon gas. The BET research on primary carbon powder reveal that the largest surface area is obtained at 100 °C heating temperature – 577 m²/g, and at 900 °C – 507 m²/g. Meanwhile, at 300–700 °C heating temperatures the powder surface area decreases up to 2.2 times. The measurements of supercapacitor specific capacitance indicate that the largest values, 15 F/g and 8.7 F/g, were obtained when the respective specific surface area of primary powders equalled 577 m²/g and 261 m²/g.     

多孔氧化铝模板催化制备定向碳纳米管阵列

在不加过渡金属做催化剂的前提下,利用化学气相沉积法在二次阳极氧化法制得的多孔氧化铝模板中制备沉积了定取向碳纳米管阵列。考察了不同沉积温度以及退火处理对沉积结果的影响。温度达到600℃以上时,能得到开口的、定取向的多壁碳纳米管阵列；当沉积温度降至550℃左右时,沉积结果中存在碳纳米管、纳米纤维以及类似于弯曲的竹节状的结构；温度继续降低至500℃以下时,不能得到碳纳米管或碳纳米纤维；从实验结果中可以得出,在氧化铝模板中沉积碳纳米管过程中氧化铝起到了催化乙炔裂解以及催化沉积的碳石墨化成碳纳米管两种作用。另外,退火处理虽然能够提高沉积的碳纳米管的石墨化程度,但是也可能会引入新的缺陷。     

Comparison study of GaN films grown on porous and planar GaN templates

The GaN thick films have been grown on porous GaN template and planar metal-organic chemical vapor deposition(MOCVD)-GaN template by halide vapor phase epitaxy(HVPE). The analysis results indicated that the GaN films grown on porous and planar GaN templates under the same growth conditions have similar structural, optical, and electrical properties. But the porous GaN templates could significantly reduce the stress in the HVPE-GaN epilayer and enhance the photoluminescence(PL) intensity. The voids in the porous template were critical for the strain relaxation in the GaN films and the increase of the PL intensity. Thus, the porous GaN converted from β-Ga2O3 film as a novel promising template is suitable for the growth of stress-free GaN films.     

Analysis of the effect of stray capacitance on a charge/discharge-based electrical capacitance tomography system

The measurement circuit of electrical capacitance tomography (ECT) system mainly includes CMOS switches, C/V conversion circuit and Data processing circuit. In order to improve the image reconstruction quality, conversion circuit is very necessary to the small capacitance measurement circuit. A charge/discharge measurement circuit is one of the most suitable for the C/V conversion circuit in ECT. The stray capacitance between the measurement electrodes and earth can be large and have an effect on the capacitance measurement. This paper analyzes this effect, taking into account the ON-resistance of the COMS switch, the unit gain frequency of op-amp, and gain error in the measurement circuit. Finally, it is shown that if the range of stray capacitance is 150 ± 60 pF, overall error would be estimated. Comparing the effects of the circuit parameters, this charge/discharge-based capacitance is effectively stray-immune. It is a more efficient analysis to C/V circuit in ECT and offers a great benefit to information processing.     

Influence of air-oxidation on electric double layer capacitances of multi-walled carbon nanotube electrodes

In this work, air-oxidized multi-walled carbon nanotube (MWCNT) electrodes have been prepared from catalytically grown MWCNTs of high purity and narrow diameter distribution. The experimental results show that air-oxidation modifies the intrinsic structure of individual MWCNTs and a little improves the dispersity of the MWCNTs. The specific capacitances of the electrodes in electric double layer capacitors (EDLCs) based on oxidized MWCNTs are obviously improved through air-oxidation. The specific capacitance of 50 F/g is obtained in the air-oxidized MWCNTs at 600 °C on a single cell device with 35 wt% H₂SO₄ as an electrolyte. This is probably increased BET specific surface area and mesopore volume of the oxidized MWCNT electrode materials of EDLCs. These properties are, therefore highly desirable for the development of electrochemical capacitors with high power and long cycle life.     

带缝的长直圆柱面电容传感器电容的讨论

通过求解带缝的长直圆柱面电容器中的电势的拉普拉斯方程,讨论该电容器的电容计算公式。     

长直组合矩形柱面电容传感器电容的研究

通过求解电势的拉普拉斯方程，讨论长直组合矩形柱面电容器中的电势、电荷和电容。     

The influence of preparative parameters on the adhesion of alumina washcoats deposited on metallic supports

Well-adhered alumina washcoats on FeCrAl metallic supports were prepared using boehmite sols and alumina slurries. The microstructure and the surface performance of the washcoat/support were investigated by SEM, XRD, and ultrasonic vibration. The effects of the main preparative parameters on the coating adherence were studied. The optimal coating conditions are presented as follows: pre-oxidation of the metallic supports was performed at 900 °C for 10 h, the sol layer loadings were 2.0-6.6 wt.%, and the slurry layer loadings were less than 25.3 wt.%. The sol layer drying was performed at 30 °C for 1 h and that for the slurry layer the drying was performed at 120 °C for 2 h, and the coating calcining was performed at 900 °C for 2 h. The SEM photographs of coated samples show that alumina washcoats were well deposited on the metallic supports.     

基于电容和电导特性分析GaN蓝光发光二极管老化机理

采用正向交流小信号方法测试和分析老化前后GaN发光二极管（LED）的电容-电压特性,结合串联电阻、理想因子、隧穿电流参数讨论负电容以及电导变化情况.基于L-V曲线定性分析老化前后负电容的阈值电压,老化之后样管的受主浓度降低,辐射复合概率下降,大量缺陷以及非辐射复合中心出现,对载流子俘获作用增强,造成负电容降低.反向偏压以及小正向偏压下,隧穿效应导致老化之后样管的电导增大;正向偏压大于2.2 V区域,考虑串联电阻效应,老化后样管电导减小.在分析LED电容-电压、光输出、电学特性曲线与老化机理基础上,通过实验论证以及理论解释表明,负电容以及电导特性可作为分析LED老化特性的参考依据. 关键词： GaN发光二极管 负电容 电导 老化机理     

Influence of density inhomogeneity on the quantum capacitance of graphene nanoribbon field effect transistors

A semi-analytical model for the capacitance–voltage characteristics of graphene nanoribbon field-effect transistors (GNR-FETs), in the quantum capacitance limit, is presented. The model incorporates the presence of electron–hole puddles induced by local potential fluctuations assuming a Gaussian distribution associated with these puddles. Our numerical results show that the multi-peaks in the non-monotonic quantum capacitance–voltage characteristics are broadened as the potential fluctuation strength increases and the broadening effect is much more pronounced in wide GNRs. The influence of both gate-insulator thickness and dielectric constant scaling on the total gate-capacitance characteristics is also explored. Gate capacitance has non-monotonic behavior with ripples for thin gate-insulators. However, as we go beyond the quantum capacitance limit by increasing insulator thickness or decreasing dielectric constant, the ripples are suppressed and smooth monotonic characteristics are obtained.     

Effect of magnesium addition on the wetting of alumina by aluminium

In this report the wetting behaviour between polycrystalline alumina substrates and molten aluminium doped with magnesium as a wetting agent has been studied using the sessile drop technique. The time required for equilibrium attainment is investigated. To explore the formation of possible phases at the interface, electron microscopic studies along with EDX analysis have been employed. It is found that magnesium reduces the time and temperature required for equilibrium in the Al/Al₂O₃ system. The Al-7 wt% Mg and Al-10 wt% Mg alloys can wet alumina at temperatures as low as 900 °C. It is also found that molten aluminium doped with magnesium can wet polycrystalline alumina at temperatures below 1000 °C. A thin reaction layer was observed at the Al-Mg/Al₂O₃ interface in the present study.     

Effect of nanoporous GaN templates with different pore diameters on the subsequent thick GaN layers by HVPE

A set of GaN films were overgrown by hydride vapor phase epitaxy (HVPE) on nanoporous GaN templates with different pore diameters. These samples have various properties as seen from the measurements of X-ray diffraction (XRD) and photoluminescence (PL). Cross-sectional observations under a scanning electron microscopy (SEM) reveal that the overgrowth mechanism and process are strongly related to the dimension of nanopores, indicating that an optimum diameter exists for the properties of subsequent HVPE–GaN layers. When the diameters of nanopores are less than the optimum value, the pores on top of GaN templates can be left, and the properties of HVPE–GaN films show significant improvement. In contrast, the pores are almost stuffed with HVPE–GaN films, which obviously limit the improvement degree of HVPE–GaN films.     

The coexistence of γ(γ′) and θ alumina observed by STM and LEED on top of oxide layer grown on CoAl(1 0 0)

We report the coexistence of γ(γ′) and θ alumina grown on the CoAl(1 0 0) surface. Both phases were observed after annealing of alumina at 1150 K by means of scanning tunnelling microscopy (STM). The crystal structures of γ(γ′) and θ alumina were indexed based on low energy electron diffraction (LEED) and STM experimental data.     

Nonequilibrium molecular dynamics simulation for studying the effect of pressure difference and periodic boundary conditions on water transport through a CNT membrane

A NEMD simulation system is constructed to simulate at two-dimensional (2D) periodic boundary conditions (PBCs) and to create two different pressures on two sides of the carbon nanotube (CNT) membrane. The simulation results show that water permeation through the same CNT membrane driven by different pressure differences exhibit similar transport phenomenon including unusually fast water permeation and a periodic (non-parabolic) radial velocity distribution unlike the parabolic form characteristic of continuum flow in the CNT membrane. A three-dimensional (3D) PBC system is also constructed to simulate water permeation through the same CNT membrane at the same pressure differences, to show the effect of PBC and simulation methodologies on transport phenomenon. The two systems both show that the forward/backward water flux increases/decreases with increasing the pressure difference from 1.0 MPa to 8.0 MPa. However, the net flux is higher for the 3D PBC system, especially at higher pressure difference is high. In general, the NEMD simulation method using the 2D PBC system is shown to be a feasible and valuable tool for studying pressure-driven permeation processes such as nanofiltration through these studies with model CNT membrane.     

Influence of the electrical parameters on the fabrication of copper nanowires into anodic alumina templates

Metallic copper nanowires have been grown into the pores of alumina membranes by electrodeposition from an aqueous solution containing CuSO₄^.and H₃BO₃ at pH 3. In order to study the influence of the electrical parameters on growth and structure of nanowires, different deposition potentials (both in the region where hydrogen evolution reaction is allowed or not) and voltage perturbation modes (constant potential or unipolar pulsed depositions) were applied. In all cases, pure polycrystalline Cu nanowires were fabricated into template pores, having lengths increasing with the total deposition time. These nanowires were self-standing, because they retain their vertical orientation and parallel geometry even after total template dissolution.However, the electrical parameters influence the growth rate, length uniformity and crystal size of the nanowires. Continuous electrodeposition resulted in higher growth rates but less uniform lengths of nanowires grown inside different membrane pores, whilst a square pulse deposition produced a slower growth but quite uniform lengths. Also the grain size, of the order of 50 nm, was slightly influenced by the potential perturbation mode.     

Magnetic irreversibility of the Fe antidot arrays film by depositing on the porous alumina templates

An Fe layer was sputter-deposited onto porous alumina templates and Kapton respectively. Fe layer on the porous alumina templates formed an antidot arrays nanostructure, while Fe layer on the Kapton substrate formed a continuous film. Scanning electron microscopy and grazing incidence X-ray diffraction were employed to characterize the morphology and crystal structure of the Fe antidot arrays and continuous film, respectively. The temperature dependence of magnetic properties was shown in the temperature range 2-300 K. The irreversibility of the magnetization of Fe antidot arrays film, as measured in zero-field cooling (ZFC) and field cooling (FC) states, was attributed to the pinning effect of the holes.     

Fabrication of the uniform CdTe quantum dot array on GaAs substrate utilizing nanoporous alumina masks

Fabrication of quantum dot array (QDA) is attractive for applications in electronic and optoelectronic devices. The CdTe QDAs have potential applications in optoelectronic devices of visible range. One of the major challenges in fabricating QDAs is the uniformity and reproducibility in size and spatial distribution. The uniformity and reproducibility of QDs can be improved by using the nanoporous alumina mask. The geometry of porous alumina is schematically represented as a close-packed array of columnar hexagonal cells, each containing a central pore normal to the substrate. The well-ordered nanoporous alumina masks were able to obtain by two-step anodizing processes from aluminum in oxalic acid solutions at low temperature. The pore size, thickness, and density of nanoporous alumina mask can be controlled with the anodization voltage, time, and electrolyte. The CdTe QDAs on the GaAs substrate was grown by molecular beam epitaxy method using the porous alumina masks. The temperature of substrate and source (Cd, Te) was an important factor for the growth of CdTe QDs on GaAs substrate. The CdTe QDAs of 80 nm dot size was fabricated; using the porous alumina masks (300 nm thickness) of pore diameter (80 nm) and density (10¹⁰ /cm²).     

Influence of the experimental conditions on the specific heat critical behaviour of TGS

Using a conduction calorimeter the specific heat critical behaviour of a TGS crystal has been measured. The ranges of the deviations from the classical behaviour below and above the transition point are 1 and 20 K respectively. These deviations seem to be well related to LK theory predictions. In a range of 0.1 K below the transition point thermal hysteresis appears which does not depend on the measuring temperature rate. The same behaviour is obtained with the sample at atmospheric pressure and under a high vacuum.     

Silver nanowires electrodeposited into nanoporous templates: Study of the influence of sizes on crystallinity and structural properties

In this work, results on the study of the influence of silver nanowire dimensions on the crystallinity and structural properties are presented. Silver nanowire arrays with high aspect ratios were prepared in the hollow structures of nanoporous templates using potentiostatic electrodeposition. Two types of material were employed as a template: commercial porous anodic aluminum oxide (with a mean pore diameter of 180 nm) and track-etched polycarbonate membranes (with a mean pore diameter of 15, 30 and 80 nm). Characterization of the silver nanowires has been done by EDS, XRD, TEM and electron diffraction. The degree of preferred crystallographic orientation (along the (1 1 1), (2 0 0) or (2 2 0) crystallographic planes) and the crystallite size of the silver nanowires as a function of template pore diameter are given and discussed.