提高多孔硅传感特性的一种新方法(英文)

研究了多孔硅(PS)吸附有机溶剂分子后对多孔硅荧光谱的淬灭效应。结果表明:淬灭多孔硅发光的有机溶剂分子是极性分子,有机溶剂分子的极性不同对多孔硅发光的淬灭程度也不同,且有些有机溶剂分子吸附氧化多孔硅比吸附多孔硅引起的发光淬灭具有更好的可逆性和选择性;用含有胺基的正丁胺(CH3CH2CH2CH2-NH2)作碳源,用射频辉光放电等离子系统在多孔硅表面沉积c n膜对多孔硅进行钝化处理后发现:其电致发光强度明显增强,发光峰位兰移,且在大气中存放60天后,其电致发光谱强度基本不衰减,峰位不再移动。经钝化处理的器件较未经处理的器件具有小的串联电阻Rs和低的驱动电压。这为提高多孔硅的传感特性提供了一种新方法。     

Caustics due to a negative refractive index in circular graphene p-n junctions

We show that the wave functions form caustics in circular graphene p-n junctions which in the framework of geometrical optics can be interpreted with a negative refractive index.     

Thermopower and conductance for a graphene p-n junction

The thermopower and conductance in a zigzag graphene p-n junction are studied by using the nonequilibrium Green's function method combined with the tight-binding Hamiltonian. Our results show that the conductance and thermopower of the junction can be modulated by its width, the potential drop, and the applied perpendicular magnetic fields. A narrow graphene p-n junction shows insulating characteristics, and its thermopower is much larger than that of the wider one around the Dirac point. The insulating characteristic of the junction decreases as the width increases. In particular, with increasing junction width or the potential drop, the first conductance plateau is strongly enhanced and the thermopower is inverted around the Dirac point. A perpendicular magnetic field strongly suppresses the conductance and enhances the thermopower in the p-n region. The influence of edge vacancy defects on the conductance and thermopower is also discussed. Our results provide theoretical references for modulating the electronic and thermal properties of a graphene p-n junction by tuning its geometry and working conditions.     

On the possibility of obtaining a finite value for the proton-neutron mass difference

We discuss the possibility of evaluating the p-n mass difference unambiguously, taking in account a possible violation of Bjorken scaling law in the deep inelastic e-p, e-n scattering. We find that even a very small amount of violation is sufficient in order to obtain the correct value for the p-n mass difference.     

Nonlinear screening and ballistic transport in a graphene p-n junction

We study the charge density distribution, the electric field profile, and the resistance of an electrostatically created lateral p-n junction in graphene. We show that the electric field at the interface of the electron and hole regions is strongly enhanced due to limited screening capacity of Dirac quasiparticles. Accordingly, the junction resistance is lower than estimated in previous literature.     

Epitaxial gaas p-n junctions grown in a closed iodide system with various iodine concentrations

Conclusions These results show that when epitaxial films are grown in a closed gas-transport system there are clear correlations among the rate at which material is supplied, the film growth rate, the defectiveness of the film, the doping level, and the properties of the epitaxial p-n junction. The effect of the transportagent concentration on the growth and properties of the epitaxial films must be taken into account in analyzing the properties of epitaxial p-n junctions and heterojunctions.Translated from Izvestiya VUZ. Fizika, No. 2, pp. 31–35, February, 1970.     

Tailorable acceptor C(60-n)B(n) and donor C(60-m)N(m) pairs for molecular electronics

Our first-principles calculations demonstrate that C(60-n)B(n) and C(60-m)N(m) can be engineered as the acceptors and donors, respectively, needed for molecular electronics by properly controlling the dopant number n and m in C60. We show that acceptor C48B12 and donor C48N12 are promising components for molecular rectifiers, carbon nanotube-based n-p-n (p-n-p) transistors, and p-n junctions.     

Quantized four-terminal resistances in a ferromagnetic graphene p-n junction

The quantum Hall and longitudinal resistances in four-terminal ferromagnetic graphene p-n junctions under a perpendicular magnetic field are investigated. In the Hall measurement, the transverse contacts are assumed to be located at the p-n interface to avoid the mixing of edge states at the interface and the resulting quantized resistances are then topologically protected. According to the charge carrier type, the resistances in a four-terminal p-n junction can be naturally divided into nine different regimes. The symmetric Hall and longitudinal resistances are observed, with many new robust quantum plateaus revealed due to the competition between spin splitting and local potentials.     

基于双极性二维晶体的新型p-n结

二维晶体的特殊结构和新奇物理性能为构建新型纳米结构和器件,实现半导体领域的突破性进展提供了可能.本文首先介绍了双极性二维晶体的基本物理性能和相关范德瓦耳斯异质结的制备方法.在此基础上,主要综述了双极性二维晶体在新型电场调制二维晶体p-n结与异质p-n结以及非易失性可存储二维晶体p-n结等方面的应用、相关结构设计、电子和光电子等物理性能.然后进一步介绍了该类新型p-n结在逻辑整流电路、场效应光电子晶体管、多模式非易失性存储器、整流存储器、光电子存储器、光伏器件等方面的潜在应用.最后总结展望了该种新型p-n结在相关领域的可能发展方向.     

Disorder-induced enhancement of transport through graphene p-n junctions

We investigate the electron transport through a graphene p-n junction under a perpendicular magnetic field. By using the Landauer-Büttiker formalism combined with the nonequilibrium Green function method, the conductance is studied for clean and disordered samples. For the clean p-n junction, the conductance is quite small. In the presence of disorders, it is strongly enhanced and exhibits a plateau structure at a suitable range of disorders. Our numerical results show that the lowest plateau can survive for a very broad range of disorder strength, but the existence of high plateaus depends on system parameters and sometimes cannot be formed at all. When the disorder is slightly outside of this disorder range, some conductance plateaus can still emerge with its value lower than the ideal value. These results are in excellent agreement with a recent experiment.     

用光伏效应研究有机薄膜电致发光器件中的接触性质

首次发现了有机薄膜电致发光器件的光生伏特效应，通过对器件的光电流响应谱的详细研究，分析了不同结构的有机发光器件中的有机半导体之间，以及有机半导体与电极材料之间的半导体接触性质，发现有机发光材料Ａｌｑ３，有机空穴传输材料ｄａｉｍｉｎｅ与金属铝电极之间形成阻挡接触，是电致发光器件发光和产生光电效应的根本原因；而双层器件中有机层Ａｌｑ３与ｄｉａｍｉｎｅ之间的结是双层器件产生高发光效率的原因，正是这种结在双层器件中起了局限载流子和激子的作用，使发光亮度大为提高，结合分区掺杂实验结果，给出了较完善的能带模型．     

Direct observation of the carrier transport process in InGaN quantum wells with a pn-junction

A new mechanism of light-to-electricity conversion that uses InGaN/GaN QWs with a p-n junction is reported.According to the well established light-to-electricity conversion theory,quantum wells(QWs) cannot be used in solar cells and photodetectors because the photogenerated carriers in QWs usually relax to ground energy levels,owing to quantum confinement,and cannot form a photocurrent.We observe directly that more than 95% of the photoexcited carriers escape from InGaN/GaN QWs to generate a photocurrent,indicating that the thermionic emission and tunneling processes proposed previously cannot explain carriers escaping from QWs.We show that photoexcited carriers can escape directly from the QWs when the device is under working conditions.Our finding challenges the current theory and demonstrates a new prospect for developing highly efficient solar cells and photodetectors.     

Snake states along graphene p-n junctions

We investigate transport in locally gated graphene devices, where carriers are injected and collected along, rather than across, the gate edge. Tuning densities into the p-n regime significantly reduces resistance along the p-n interface, while resistance across the interface increases. This provides an experimental signature of snake states, which zigzag along the p-n interface and remain stable as applied perpendicular magnetic field approaches zero. Snake states appear as a peak in transverse resistance measured along the p-n interface. The generic role of snake states in disordered graphene is also discussed.     

p-n相互作用对1/2~-[541]带带交叉频率延迟的影响

通过转动框架下的经验近似,提取了A=160区4个核的剩余p n相互作用对1/2-[541]带的带交叉频率延迟的影响.结果表明,对于奇Z核中1/2-[541]带的带交叉频率的延迟,剩余p n相互作用的影响大约占二分之一左右,表明剩余p n相互作用在其中起着很重要的作用.We estimated the effect of residual p-n interaction on the crossing frequency delay of the 1/2~(-)\ band of four odd-Z nuclei through the empirical method. The result shows that about half of the shift in crossing frequency in the 1/2~-\ band is the effect of residual p-n interaction. The residual p-n interaction plays a very important role in the crossing frequency delay of the 1/2~(-)\ band.     

Radial junction silicon solar cells with micro-pillar array and planar electrode interface for improved photon management and carrier extraction

We demonstrate radial p-n junction silicon solar cells with micro-pillar array with higher short-circuit current and open-circuit voltage than comparable planar silicon solar cells. Micro-pillar array, fabricated by RIE, acts as an effective anti-reflection coating for visible light with less than 6% reflection. Compared to devices with planar surface, devices with micro-pillar array show a 27% enhancement in short circuit current. The radial p-n junction of the micro-pillars also improves extraction probability of the photogenerated carriers, which further increases the short circuit current. Typically, micro-pillar solar cells suffer from high recombination losses at the Si/metal interface, resulting in poor V_OC. Our devices prevent these recombination losses by planarizing the Si/metal interface, leading to an open circuit voltage of 622?mV, the highest ever reported for micro-pillar solar cells. This planarized contact also reduces the series resistance associated with radial junctions, leading to series resistance of ≤0.50?Ω-cm² and fill factors up to 76.7%.     

Si被注入Gd后的磁性及其整流特性的研究

采用离子束技术，在n型硅基片中注入稀土元素钆，制备了磁性-非磁性p-n结.磁性层Gd_xSi_1-x表现出优良的磁学性能，高居里温度，高原子磁矩(利用RKKY模 型 可以得到解释)，低矫顽力，并保持着半导体的属性，磁性-非磁性p-n结具有整流特性，但 没有观察到明显的磁电阻效应. 关键词： 磁性半导体 磁性p-n结 钆的硅化物 离子束外延     

Klein backscattering and Fabry-Pérot interference in graphene heterojunctions

We present a theory of quantum-coherent transport through a lateral p-n-p structure in graphene, which fully accounts for the interference of forward and backward scattering on the p-n interfaces. The backreflection amplitude changes sign at zero incidence angle because of the Klein phenomenon, adding a phase pi to the interference fringes. The contributions of the two p-n interfaces to the phase of the interference cancel with each other at zero magnetic field, but become imbalanced at a finite field. The resulting half-period shift in the Fabry-Pérot fringe pattern, induced by a relatively weak magnetic field, can provide a clear signature of Klein scattering in graphene. This effect is shown to be robust in the presence of spatially inhomogeneous potential of moderate strength.     

Study of Schottky contact in HgCdTe infrared photovoltaic detectors

The changed polarity of transient photovoltage (TPA) from negative to positive induced by ultra fast lasers illumination is studied in the HgCdTe p-n junction photovoltage detector. The negative photovoltaic-response decrease obviously and even disappear by blocking the laser beam with an aperture to limit the illumination area of the linear array detectors. This new phenomenon can be explained by a combined theoretical model of p-n junction and Schottky contact. Using the TPA technique and the combined model, the characters of p-n junction and Schottky contact will be distinguished. Therefore, it could be used in characterizing the Ohmic contact of the detectors electrodes, and its sensitivity is expected to be much higher than the steady states methods.     

Electrochemical fabrication of a novel conducting polythiophene film junction

A compact conductive polythiophene (PT) film junction was prepared by potential controlled electrochemical doping after electropolymerization of thiophene. The polythiophene film was cation-doped on one side, while its other side was anion-doped, which resulted in a polythiophene p-n junction film diode. The free-standing polythiophene film junction diode was flexible and was 1.5 times stronger than aluminum metal. After treatment by a strong electric field, the polythiophene p-n junction exhibits a novel electric property like an intelligent electric switch.     

Colossal magnetoresistance in manganites and related prototype devices＊

We review colossal magnetoresistance in single phase manganites, as related to the field sensitive spin-charge interactions and phase separation; the rectifying property and negative/positive magnetoresistance in manganite/Nb：SrTio3 p-n junctions in relation to the special interface electronic structure; magnetoelectric coupling in manganite/ferroelectric structures that takes advantage of strain, carrier density, and magnetic field sensitivity; tunneling magnetoresistance in tunnel junctions with dielectric, ferroelectric, and organic semiconductor spacers using the fully spin polarized nature of manganites; and the effect of particle size on magnetic properties in manganite nanoparticles.