Three-dimensional scanning force/tunneling spectroscopy at room temperature

We simultaneously measured the force and tunneling current in three-dimensional (3D) space on the Si(111)-(7 × 7) surface using scanning force/tunneling microscopy at room temperature. The observables, the frequency shift and the time-averaged tunneling current were converted to the physical quantities of interest, i.e. the interaction force and the instantaneous tunneling current. Using the same tip, the local density of states (LDOS) was mapped on the same surface area at constant height by measuring the time-averaged tunneling current as a function of the bias voltage at every lateral position. LDOS images at negative sample voltages indicate that the tip apex is covered with Si atoms, which is consistent with the Si-Si covalent bonding mechanism for AFM imaging. A measurement technique for 3D force/current mapping and LDOS imaging on the equivalent surface area using the same tip was thus demonstrated.     

Mechanical vertical manipulation of selected single atoms by soft nanoindentation using near contact atomic force microscopy

A near contact atomic force microscope operated at low-temperature is used for vertical manipulation of selected single atoms from the Si(111)-(7 x 7) surface. The strong repulsive short-range chemical force interaction between the closest atoms of both tip apex and surface during a soft nanoindentation leads to the removal of a selected silicon atom from its equilibrium position at the surface without additional perturbation of the (7 x 7) unit cell. Deposition of a single atom on a created vacancy at the surface is achieved as well. These manipulation processes are purely mechanical, since neither bias voltage nor voltage pulse is applied between probe and sample. Differences in the mechanical response of the two nonequivalent adatoms of the Si(111)-(7 x 7) with the load applied is also detected.     

Low temperature scanning force microscopy of the Si(111)-(7x7) surface

A low temperature scanning force microscope (SFM) operating in a dynamic mode in ultrahigh vacuum was used to study the Si(111)- (7x7) surface at 7.2 K. Not only the twelve adatoms but also the six rest atoms of the unit cell are clearly resolved for the first time with SFM. In addition, the first measurements of the short range chemical bonding forces above specific atomic sites are presented. The data are in good agreement with first principles computations and indicate that the nearest atoms in the tip and sample relax significantly when the tip is within a few A of the surface.     

Scanning force microscopy on the Si(111)7×7 surface reconstruction

Scanning force microscopy images of the Si(111)7×7 surface reconstruction are presented which are taken in the contact mode in ultrahigh vacuum. Topographic and lateral force data are acquired simultaneously. A special treatment of the sensing tip with PTFE helps to overcome the strong adhesion and wear effects that normally occur on this particular surface.     

High resolution atomic force microscopic imaging of the Si(111)-(7 x 7) surface: contribution of short-range force to the images

Observation of the rest-atom layer of the Si(111)-(7 x 7) surface is performed by atomic force microscopy. By detecting the force due to the single chemical covalent bond formed between the tip and the sample surface, individual atoms on the layer were clearly resolved. Unprecedented high spatial resolution was achieved by setting the detection force at a small value and by reducing background forces due to the long-range interactions with the small oscillation amplitude of the cantilever and sharp probe tip.     

Desorption of chlorine atoms on Si (1 1 1)-(7 × 7) surfaces induced by hole injection from scanning tunneling microscope tips

We investigated desorption of chlorine atoms on Si (1 1 1)-(7 × 7) surfaces induced by hole injection from scanning tunneling microscope tips. The hole-induced desorption of chlorine atoms had a threshold bias voltage corresponding to the energy position of the S3 surface band originated in Si backbonds. The chlorine atom desorption rate was almost proportional to the square of the tunneling current. We have discussed possible mechanisms that two holes injected into Si surface states get localized at the backbonds of chlorinated Si adatoms, which induces the rupture of Cl-Si bonds to result in chlorine atom desorption.     

Nanoscale imaging of electronic surface transport probed by atom movements induced by scanning tunneling microscope current

The hopping movements of Cl atoms on a Si(111)-(7 x 7) surface that are enhanced by an electron injection from tips of a scanning tunneling microscope (STM) exhibit a spatial spread from the electron injection point with an anisotropic distribution. The enhanced hopping effect becomes greatest at a sample bias voltage being resonant with the Si-Cl antibonding states and also exhibits an oscillatory decay with the distance from the injection point characterized by the wavelength depending on the bias voltage. All of these facts can be interpreted in terms of the coherent expansion of the electron wave packets locally formed at the STM tip.     

Theoretical simulation of Kelvin probe force microscopy for Si surfaces by taking account of chemical forces

A new method of theoretical simulation for Kelvin probe force microscopy (KPFM) imaging on semiconductor or metal samples is proposed. The method is based on a partitioned real space (PR) density functional based tight binding (DFTB) calculation of the electronic states to determine the multi-pole electro-static force, which is augmented with the chemical force obtained by a perturbation treatment of the orbital hybridization. With the PR-DFTB method, the change of the total energy is calculated together with the induced charge distribution in the tip and the sample by their approach under an applied bias voltage, and the KPFM images, namely the patterns of local contact potential difference (LCPD) distribution, are obtained with the minimum condition of the interaction force. However, since the interaction force is due to electro-static multi-poles, the spatial resolution of the KPFM images obtained by PR-DFTB is limited to the nano-scale range and an atom-scale resolution cannot be attained. By introducing an additional chemical force, i.e., the force due to the orbital hybridization, we succeeded in reproducing atom-scale resolution of KPFM images. Case studies are performed for clean and impurity embedded Si surfaces with Si tip models.     

Measurement of non-DLVO force on a silicon substrate coated with ammonium poly(acrylic acid) using scanning probe microscopy

The repulsive force originating from steric hindrance of polymers in aqueous solvent was investigated using scanning probe microscopy (SPM). The contact angle (CA) of ammonium poly(acrylic acid) (PAA) solution on the Si surface was measured to estimate the state of the Si substrate. Results of CA measurement show that the Si surface was fully covered with PAA at 0.1 mass% in aqueous solution. The interaction force between the Si tip and the wafer was estimated using the SPM force curve mode. The force curve measured in the ion-exchanged purified water showed the typical relation predicted by Derjaguin-Landau-Verway-Overbeek (DLVO) theory. However, the force curve shape in the 0.1 mass% PAA solution was significantly different. Only a repulsive force was observed at less than about 4 nm of separation distance between the Si wafer and cantilever tip. This distance originated from the steric repulsions of PAA adsorbed onto the Si wafer and cantilever tip.     

Atomic resolution in dynamic force microscopy across steps on Si(1 1 1)7×7

In this note we report the first observation of salient features of the Si(1 1 1)7×7 reconstructed surface across monatomic steps by dynamic atomic force microscopy (AFM) in ultrahigh vacuum (UHV). Simultaneous measurements of the resonance frequency shift Δf of the Si-cantilever and of the mean tunneling current ī _i from the cleaned Si tip indicate a restricted range for stable imaging with true atomic resolution. The corresponding characteristics vs. distance reveal why feedback control via Δf is problematic, whereas it is as successful as in conventional STM via ī _i .     

The Si(001) c(4×4) surface reconstruction: a comprehensive experimental study

We have carried out a comprehensive experimental study of the Si(001) c(4×4) surface reconstruction by scanning tunneling microscopy (STM) (at room temperature and elevated temperatures), Auger electron spectroscopy (AES), reflection high-energy electron diffraction (RHEED) and low-energy electron diffraction (LEED). Si(001) samples were kept under ultra-high vacuum (UHV) at around 550°C until the c(4×4) reconstruction appeared. STM contrast of the c(4×4) reconstruction is strongly influenced by electronic effects and changes considerably over a range of bias voltages.

The c(4×4) surface reconstruction is a result of stress which is caused by incorporation of impurities or adsorbates in sub-surface locations. The resulting c(4×4) reconstruction in the top layer is a pure silicon structure. The main structural element is a one-dimer vacancy (1-DV). At this vacancy, second layer Si-atoms rebond and cause the adjacent top Si-dimers to brighten up in the STM image at low bias voltages. At higher bias voltage the contrast is similar to Si-dimers on the (2×1) reconstructed Si(001). Therefore, besides the 1-DV and the two adjacent Si-dimers, another Si-dimer under tensile stress may complete the 4× unit cell. This is a refinement of the missing dimer model.     

Origin of p(2 x 1) phase on Si(001) by noncontact atomic force microscopy at 5 k

The controversial issue of the origin of the p(2 x 1) reconstruction of the Si(001) surface observed in recent low temperature scanning tunneling microscopy experiments is clarified here using 5 K noncontact atomic force microscopy. The c(4 x 2) phase is observed at separations corresponding to weak tip-surface interactions, confirming that it is the ground state of the surface. At larger frequency shifts the p(2 x 1) phase of symmetric dimers is observed. By studying the interaction of a reactive Si tip with the c(4 x 2) Si(001) surface using an ab initio method, we find that the observed change in the surface reconstruction is an apparent effect caused by tip induced dimer flipping resulting in a modification of the surface structure and appearance of the p(2 x 1) phase in the image. Using an appropriate scanning protocol, one can manipulate the surface reconstruction at will, which has significance in nanotechnology.     

Electron spin resonance observation of the Si(111)-(7x7) surface and its oxidation process

Electron spin resonance (ESR) observation of dangling-bond states on the Si(111)-(7x7) surface is demonstrated for the first time. The ESR spectra clearly show that a reaction of molecular oxygen with the Si(111)-(7x7) surface is associated with the appearance of a new dangling-bond center at unreacted Si adatoms. Most of the oxidized surface sites do not show ESR signals, but in a minor part of the surface another new type of surface defect is detected. The well known P(b) center at the SiO2/Si interface is found to evolve at an oxide thickness as thin as 0.3 nm.     

Distance dependence of noncontact-AFM image contrast on Si(111) × –Ag structure

Atomic resolution imaging of the Si(111) × R30°–Ag surface was investigated using a noncontact atomic force microscopy (NC-AFM) in ultrahigh vacuum. NC-AFM images showed three types of contrasts depending on the distance between an AFM tip and a sample surface. When the tip–sample distance was about 1–3 Å, the images showed the honeycomb arrangement with weak contrast. When the tip–sample distance was about 0–0.5 Å, the images showed the periodic structure composed of three bright spots with relatively strong contrast. On the other hand, the contrasts of images measured at the distance of 0.5–1 Å seemed to be composed of the above-mentioned two types of contrasts. By comparing the site of bright spots in the AFM images with honeycomb-chained trimer (HCT) model, we suggested the following models: when the tip is far from the sample surface, tip–sample interaction force contributing to imaging is dominated by physical bonding interaction such as Coulomb force and/or van der Waals (vdW) force between the tip apex Si atoms and Ag trimer on the sample surface. On the other hand, just before the contact, tip–sample interaction force contributing to imaging is dominated by chemical bonding such as the force due to hybridization between the dangling bond out of the tip apex Si atom and the orbit of Si–Ag covalent bond on the sample surface.     

Sub-Angstrom oscillation amplitude non-contact atomic force microscopy for lateral force gradient measurement

We report the first results from novel sub-Angstrom oscillation amplitude non-contact atomic force microscopy developed for lateral force gradient measurements. Quantitative lateral force gradients between a tungsten tip and Si(1 1 1)-(7 × 7) surface can be measured using this microscope. Simultaneous lateral force gradient and scanning tunnelling microscope images of single and multi atomic steps are obtained. In our measurement, tunnel current is used as feedback. The lateral stiffness contrast has been observed to be 2.5 N/m at single atomic step, in contrast to 13 N/m at multi atomic step on Si(1 1 1) surface. We also carried out a series of lateral stiffness-distance spectroscopy. We observed lateral stiffness-distance curves exhibit sharp increase in the stiffness as the sample is approached towards the surface. We usually observed positive stiffness and sometimes going into slightly negative region.     

Optical selection rules in light emission from the scanning tunneling microscope

It is reported that optical selection rules still apply in light emission from the scanning tunneling microscope (STM). Linear polarization of isochromat light emitted from the tunneling gap between a STM tip made of tungsten (W) and a silicon (Si) sample with a (001) clean surface strongly depends on the bias voltage between tip and sample. The results show that pi* and sigma* surface states, for example, of the Si(001) sample contribute to emission of p- and s-polarized light, respectively, in accordance with optical selection rules.     

Spatially resolved manipulation of single electrons in quantum dots using a scanned probe

The scanning metallic tip of a scanning force microscope was coupled capacitively to electrons confined in a lithographically defined gate-tunable quantum dot at a temperature of 300 mK. Single electrons were made to hop on or off the dot by moving the tip or by changing the tip bias voltage owing to the Coulomb-blockade effect. Spatial images of conductance resonances map the interaction potential between the tip and individual electronic quantum dot states. Under certain conditions this interaction is found to contain a tip-voltage induced and a tip-voltage-independent contribution.     

Mechanism for room-temperature single-atom lateral manipulations on semiconductors using dynamic force microscopy

Vacancy-mediated lateral manipulations of intrinsic adatoms of the Si(111)-(7x7) surface at room temperature are reported. The topographic signal during the manipulation combined with force spectroscopy measurements reveals that these manipulations can be ascribed to the so-called pulling mode, and that the Si adatoms were manipulated in the attractive tip-surface interaction regime at the relatively low short-range force value associated to the manipulation set point. First-principles calculations reveal that the presence of the tip induces structural relaxations that weaken the adatom surface bonds and manifests in a considerable local reduction of the natural diffusion barriers to adjacent adsorption positions. Close to the short-range forces measured in the experiments, these barriers are lowered near the limit that enables a thermally activated hopping at room temperature.     

Atomic dipole moment distribution of Si atoms on a Si111-(7 x 7) surface studied using noncontact scanning nonlinear dielectric microscopy

A local atomic electric dipole moment distribution of Si atoms on Si(111)-(7 x 7) surface is clearly resolved by using a new technique called noncontact scanning nonlinear dielectric microscopy. The dc-bias voltage dependence of the atomic dipole moment on the Si(111)-(7 x 7) surface is measured. At the weak applied voltage of -0.5 V, a positive dipole moment is detected on the Si adatom sites, whereas a negative dipole moment is observed at the interstitial sites of inter Si adatoms. Moreover, the quantitative dependence of the surface dipole moment as a function of the applied dc voltage is also revealed at a fixed point above the sample surface. This is the first successful demonstration of direct atomic dipole moment observation achieved in the field of capacitance measurement.     

Mechanisms of molecular manipulation with the scanning tunneling microscope at room temperature: chlorobenzene/si(111)-(7 x 7)

We report a systematic experimental investigation of the mechanism of desorption of chlorobenzene molecules from the Si(111)-(7 x 7) surface induced by the STM at room temperature. We measure the desorption probability as a function of both tunneling current and a wide range of sample bias voltages between -3 V and +4 V. The results exclude field desorption, thermally induced desorption, and mechanical tip-surface effects. They indicate that desorption is driven by the population of negative (or positive) ion resonances of the chemisorbed molecule by the tunneling electrons (or holes). Density functional calculations suggest that these resonant states are associated with the pi orbitals of the benzene ring.