A physics-based potential and electric field model of a nanoscale rectangular high-K gate dielectric HEMT

In this paper, we have developed a physics-based model for surface potential, channel potential, electric field and drain current for AlGaN/GaN high electron mobility transistor with high-K gate dielectric using two-dimensional Poisson equation under full depletion approximation with the inclusion of effect of polarization charges. The accuracy of the model has been verified and is found to be in good agreement with the simulated results.     

Measurement of Low-Loss Dielectric Materials Using Dielectric Rod Resonator

To obtain the complex permittivity of low-loss dielectric materials at 60 GHz, a measurement method is developed. Using a dielectric rod resonator excited by a dielectric waveguide, effective conductivity of conducting plates for short circuiting the resonator is determined. The complex permittivity of the dielectric rod is determined by the resonant frequency and unloaded quality factor of the TE_0m1-mode resonator. Moreover, the complex permittivity of single crystal sapphire, polycrystalline ceramics, and cordierite has been investigated in virtue of numerical simulation. For all the measured specimens in this study, the proposed method is seen to provide much better accuracy for values. This work was supported in part by the National Nature Science Foundation of China, under Grant NSFC 60671009.     

束靶耦合传感器光学及机械设计

利用共轭原理设计了用于惯性约束聚变的束靶耦合传感器,不仅解决高精度打靶,同时避免模拟准直光在瞄准过程中直接辐照实验靶。根据束靶耦合传感器的设计功能和工作原理,进行系统的光学设计和机械结构设计,通过成像实验采集的图像光学分辨力达到6 m,束靶耦合精度8.8 m。该束靶耦合传感器已经成功应用于神光-Ⅲ原型装置,通过针孔相机采集的四孔CH靶图像,统计计算得到装置的打靶精度优于25 m,满足设计打靶的束靶耦合精度的指标。     

Residual stresses and white layer in electric discharge machining (EDM)

The effect of dielectric liquid and electrode type on white layer structure in electric discharge machined surfaces has been studied in terms of retained austenite and residual stresses using X-ray diffraction method. The machining tests were conducted by using two different tool electrodes (copper and graphite) and dielectric liquid (kerosene and de-ionized water) under same operational conditions. The present work suggests that the surface is saturated with carbon irrespective of the tool electrode material when machining with kerosene dielectric liquid. But, retained austenite is formed on the surface due to carbon uptake from graphite tool electrode when machining with de-ionized water dielectric liquid. On the other hand, even though surface residual stresses increase with structural non-homogeneities in the white layer, no clear consequences have been observed in residual stress distribution beneath the white layer.     

Determination of the element distribution in films deposited using the plasma focus facility by Rutherford backscattering

The C, Cu and W element profiles in films deposited using a plasma focus facility are studied by the Rutherford backscattering of 2-MeV He⁺ ions. The films are deposited onto glass substrates in Ar plasmaforming gas. The element profiles are found to depend significantly on the kinetic energy of particles. The penetration depth of particles with the velocity ~10⁵ m/s is about 1.5 μm. The corresponding element profiles showing the distribution of elements over the thickness of the glass are non-linear. For each element, the maximum layer depth is observed under the glass surface. The formation of Cu, W and C layers under the glass surface and their overlapping is a feature of films deposited using the plasma focus facility. Such an arrangement of layers evidences the significant difference between this method of film deposition and conventional techniques at low rates of atom deposition, as well as diffusion-based methods. The obtained films are found to have dielectric properties.     

介质窗口材料对高功率微波传输特性的影响

运用光学方法,分析平面波通过无限大介质平板的传输特性,进而分析单层介质窗口的引入对微波传输性能的影响。在S波段微波源上对聚四氟乙烯材料进行了真空环境下的微波放电击穿实验,通过长时间的表面放电,在聚四氟乙烯材料表面出现电痕和电树枝。在100 ns脉冲宽度下,未发生大面积表面放电前,通过光学照相,在介质表面观测到局部放电现象,认为局部放电仍能导致材料表面破坏。作为对比,进行了聚苯乙烯材料的电老化实验,实验结果表明聚苯乙烯材料具有良好的耐电痕、耐电树枝老化特性。     

Magnetic field effects on the electric modulus properties of nematic mixture E7

The molecular dynamics of the homogeneously aligned nematic liquid crystal mixture E7 subject to a magnetic field has been studied. The dielectric spectra study has revealed a low bias magnetic field effect on the evolution of dielectric relaxation spectra occurred at lower (∼kHz) (δ-relaxation) and higher (∼MHz) (α-relaxation) frequency regions. The complex electric modulus, which converted from experimental dielectric spectra, has been analyzed with theoretical model of Debye relaxation. The obtained fitting parameters of relaxation time and strength of dielectric components are shown to vary systematically with the strength of applied magnetic field. A microscopic molecular dynamic model has been proposed to describe the two-step variation of E7 molecular under the bias magnetic field. The results provide implication for magneto-modulation of liquid crystal molecular dynamics under the bias magnetic field.     

一种用于强激光系统的高比能脉冲电容器

 为了满足“神光-Ⅲ”原型装置能源系统的需要,桂林金属膜电容器厂研制成功一种高比能脉冲电容器,其尺寸为295 mm×138 mm×730(830) mm,额定电压25 kV,额定电容及偏差为55 μF,0~5 %,损耗角正切值(2.5 kV,50 Hz)小于 0.1%,比能达0.56 J/cm³ 。对该型电容器进行性能测试,所得电容偏差都在2%~5%范围,损失角正切值小于0.05%;极间耐压试验全部通过,极-地耐压试验全部通过。寿命试验中,放电电流5 kA,1×10⁴次充放电后,电容量下降1.8%。该型电容器目前已投入运行,工作情况良好。     

Nonexponentially Decaying Electromagnetic Waves Localized at the Boundary of Anisotropic Metal–Dielectric Structures

The possibility of the existence of a special class of surface electromagnetic waves with amplitude decreasing nonexponentially as they pass into an anisotropic metal–dielectric structure that borders the isotropic dielectric has been shown. The dispersion equation describing the propagation of such special surface waves has been obtained, and their attenuation coefficients and formula for electric and magnetic fields in contacting media have also been found. The expressions for the longitudinal and transverse components of the Poynting vector and volume density of electric and magnetic energy of special surface waves have been obtained. Numerical calculations for the layered metal–dielectric nanostructure that is described by a uniaxial tensor of effective dielectric permeability have been carried out Decaying.     

电偶极子位于均匀介质球中时球外电场的研究

采用分离变量法求解了电偶极子位于均匀介质球中时复连通域的拉普拉斯方程和泊松方程,求出了球内外两种不同介质的电势分布和球面上的极化电荷分布;通过求解二阶非线性微分方程得到了球外的电场线函数;利用计算软件Math-ematica 5.0,作出了相应的相互正交的等势线簇图形和电场线簇图形,并且进行了必要的讨论.     

Filtering properties of polar semiconductors

The variation of the dielectric function with frequency has been studied for polar semiconductors. The strong coupling between the surface plasmons and surface optical phonons at the surface of a polar semiconductor leads to the study of its filtering properties. The effect of a dc magnetic field on the filtering properties has also been studied. This study on six polar semiconductors GaSb, InSb, InAs, GaAs, GaP and InP has shown that they behave as a band pass and high pass filter.     

Dielectric and anharmonic behaviour of mixed alkali halides

Summary In the present paper an analysis of the dielectric behaviour and anharmonic contribution to the dielectric constants has been made of KCl−KBr mixed ionic crystals. The temperature and volume derivatives of static (ε₀), electronic (ε_∞) dielectric constants and energy gap parameter (E _g) have been calculated using the Szigeti and Havinga and Bosman dielectric theories. The anharmonic contributions have been estimated in terms of temperature derivatives of dielectric constants at constant volumes. The modified form of Clausius-Mossotti theory of dielectric polarization has been used for the mixed crystal under study. The calculated quantities have been compared with the available experimental data. A good agreement has been obtained. To speed up publication, the authors of this paper have agreed to not receive the proofs for correction.     

Near-field optical study of photorefractive surface waves in BaTiO(3)

Near-field optical microscopy has been used to study photorefractive surface waves in BaTiO(3). The field distribution of the photorefractive surface wave near the crystal-air interface has been measured and compared with theory. Experimental data indicate that a micrometer-wide transition layer with dielectric and photorefractive properties that are different from the properties of the bulk BaTiO(3) exists near the interface.     

Azimuthal dependence of reflection high resolution electron energy loss of Si(111)(2×1)

High Resolution Electron Energy Loss Spectroscopy has been used, with low energy of the primary beam and azimuthal resolution, to study the anisotropy of surface dielectric properties of Si(111)(2 × 1), in the range of the surface electronic excitations. By eliminating the effect of the kinematic prefactor, we are able to obtain from the data the surface Loss Function. Its dependence on q_∥ and ω is discussed in term of a model of surface dielectric function.     

横磁模下介质表面二次电子倍增的抑制

在介质加载加速器结构(DLA)内, 提出采用刻槽结构结合外加磁场的方法用于在电磁场横磁(TM)模式下抑制介质表面的电子倍增. 通过理论分析和数值模拟, 比较了刻槽结构和纵向磁场对斜面上电子碰撞能量和渡越时间的影响, 得到了在介质表面同时存在法向RF电场及切向RF电场时, 采用刻槽结构并施加一定的纵向磁场强度, 可有效抑制二次电子倍增的发展, 提高介质面的击穿阈值.     

Electric fields and surface charge in a thin-film ferroelectric-dielectric switchable structure that were determined with a spectral probe

A new method is proposed to study the macroscopic ac fields in the elements of thin-film ferroelectric-dielectric heterostructures during their electric switching. For this purpose, the local field surrounding dielectric molecules is measured. It is important that the dielectric has a characteristic very narrow molecular absorption band, which is used as an electric-field probe. The heterostructure under study consists of a glass substrate, a transparent electrode, a 170-nm-thick layer of polymer ferroelectric, a 40-nm-thick dielectric layer, and a semitransparent electrode. Both functional layers are grown by the Langmuir-Blodgett method. An ac electric field is applied to the electrodes, and the local field having appeared in the dielectric is measured by the electroabsorption method. With allowance for the Lorentz factor, the local field is easily converted into the macroscopic field in the dielectric layer and, then, in the ferroelectric layer. The classical Sawyer-Tower scheme is used as an additional tool to determine the surface charge to be switched at the dielectric-ferroelectric interface.     

氢离子在固体表面掠角散射与能量损失的数值模拟

利用介电响应理论和镜像反射模型对氢离子在固体表面掠角散射和能量损失进行了数值模拟．离子在表面散射时同时受到表面上原子的库仑排斥作用和表面电子气的动力学相互作用,后者是表面电子受运动的正离子扰动所产生,用线性介电响应理论来确定．在高速和低速情况下,分别采用仅与频率有关的局域介电函数和局域场修正介电函数来确定表面电子气产生的动力学相互作用力．计算结果与实验结果作了比较．发现入射速度很低时能量损失随入射角度变化不太明显,而当速度很高时能量损失随入射角度的变大而有所增加. 关键词：     

Electroconvective flow induced by dielectric barrier injection in silicone oil

It has been demonstrated that dielectric barrier actuators can be used to induce electrohydrodynamics flows in air as well as in gas. These actuators are often called surface non-thermal plasma actuators in gas applications. Plasma actuators have proved their efficiency for aerodynamics flow control in air. However dielectric barrier devices don't generate plasma in liquids. Electroconvective flows are induced by charge injection at the surface electrode tip. These dielectric barrier injectors (DBI) are particularly well adapted for wall jet production vortex, shedding, and mixing layer applications in dielectric liquids. Dielectric barrier actuators have proved their efficiency on various dielectric liquids. In this study, a dielectric barrier device is tested on silicon oil. Instead of the typical wall jet, a reverse flow is observed in specific configurations. Particle Image Velocimetry and Shlieren measurements are achieved to characterize the unusual electroconvective flow.     

Analytical model including the fringing-induced barrier lowering effect for a dual-material surrounding-gate MOSFET with a high-κ gate dielectric

By solving Poisson’s equation in both semiconductor and gate insulator regions in the cylindrical coordinates, an analytical model for a dual-material surrounding-gate (DMSG) metal–oxide semiconductor field-effect transistor (MOSFET) with a high-κ gate dielectric has been developed. Using the derived model, the influences of fringing-induced barrier lowering (FIBL) on surface potential, subthreshold current, DIBL, and subthreshold swing are investigated. It is found that for the same equivalent oxide thickness, the gate insulator with high-κ dielectric degrades the short-channel performance of the DMSG MOSFET. The accuracy of the analytical model is verified by the good agreement of its results with that obtained from the ISE three-dimensional numerical device simulator.     

Ellipsometry of anisotropic graphene-like two-dimensional materials on transparent substrates

New possibilities for determining anisotropic properties of the dielectric constants of two-dimensional materials by ellipsometry are developed. Graphene-like 2D materials are considered within the framework of macroscopic electrodynamics as ultrathin absorbing anisotropic films where the optical axis is perpendicular to the film surface. The ellipsometric inversion problem is resolved analytically. The resulting inversion formulas are very fast because they allow you to directly calculate the complex anisotropic dielectric constants without the use of sophisticated regression analysis or iterative root-finding procedures. In particular, the method offers an interest in graphene and related 2D materials because the anisotropic properties of such materials have not been studied to date.