Dependence of limited radiative recombination rate of InGaN-based light-emitting diode on lattice temperature with high injection

It is observed that the radiative recombination rate in InGaN-based light-emitting diode decreases with lattice temperature increasing.The effect of lattice temperature on the radiative recombination rate tends to be stable at high injection.Thus,there should be an upper limit for the radiative recombination rate in the quantum well with the carrier concentration increasing,even under the same lattice temperature.A modified and easily used ABC-model is proposed.It describes that the slope of the radiative recombination rate gradually decreases to zero,and further reaches a negative value in a small range of lattice temperature increasing.These provide a new insight into understanding the dependence of the radiative recombination rate on lattice temperature and carrier concentration in InGaN-based light-emitting diode.     

Electron spin resonance investigation of ultra-small double walled carbon nanotubes embedded in zeolite nanochannels

We report on the low temperature electron spin resonance (ESR) properties of ultra-small (0.45?nm) double walled carbon nanotubes (DWCNTs) embedded in zeolite nanochannels. An isotropic ESR signal is observed at g(c)?=?2.002?77 with the spin density (S?=?1/2)?～?10(19)?g(-1), which is suggested to originate from the carbon related point defects in the DWCNTs. Measurements of the ESR line width and signal intensity as a function of temperature indicate that the spins are of a localized nature as opposed to the conduction type electrons observed in large diameter CNTs. The results are consistent with the suggestion that electrons are trapped at interstitial defects. The observed linear frequency dependence of the ESR line width of embedded DWCNTs points to 'strain' as the prime source of broadening. By contrast, the study of free standing DWCNTs shows the presence of a distinctly superlinear frequency dependence of the signal width at low temperatures. The possible origin of the frequency dependence is discussed.     

WELL-WIDTH DEPENDENCE OF THE EXCITON LIFETIME IN GaAs/AlGaAs QUANTUM WELLS

The dependence of the excitonic lifetime on the well width has been studied in conventional GaAs/AlGaAs quantum wells. Two clearly different variations of the measured excitonic lifetime have been observed. For wide well widths, we find a nearly linear decrease of the lifetime with decreasing well width. However, when the well is further decreased, a saturation and even increase of the lifetime with decreeing well width are observed. The experimental data are compared with the theory of radiative excitonic recombination, and show that well width dependence of the measured photoluminescence lifetime can be attributed mainly to the change of the excitonic effective volume and the overlap integral as well.     

Electric conductivity of electron-bombarded single crystals of KCl-RbCl solid solutions

We present the results of investigations of the influence of divalent cation impurities on the radiative changes in the electric conductivity of RbCl crystals and KCl-RbCl solid solutions bombarded by electrons. It was observed that a temperature dependence of the electic conductivity of the bombarded crystals has a complicated form in this case. In the case of crystals containing no cation impurities of different valence, there is no radiative decrease of the electric conductivity due to the action of the Smoluchowski mechanism, and a sharp increase is observed instead. We consider physical properties that lead to the appearance of a maximum in the temperature dependence of the electric conductivity of the bombarded crystals.Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 12, pp. 92–96, December, 1970.     

Temperature dependence of radiative recombination in CdSe quantum dots with enhanced confinement

We studied in details the recombination dynamics and its temperature dependence in epitaxially grown neutral CdSe/ZnSSe quantum dots with additional wide-band gap MgS barriers. Such design allows to preserve a very high quantum yield and track the radiative recombination dynamics up to room temperature. A fast initial decay of ∼0.6 ns followed by a slow decay with a time constant ∼30–50 ns is observed at low temperature T < 50 K. The fast decay gradually disappears with increasing temperature while the slow decay shortens and above 100 K predominantly a single-exponential decay is observed with a time constant ∼1.3 ns, which is weekly temperature dependent up to 300 K. To explain the experimental findings, a two-level model which includes bright and dark exciton states and a temperature dependent spin-flip between them is considered. According to the model, it is a thermal activation of the dark exciton to the bright state and its consequent radiative recombination that results in the long decay tail at low temperature. The doubling of the decay time at high temperatures manifests a thermal equilibrium between the dark and bright excitons.     

Temperature dependence of photoluminescence in amorphous Si1-xCx:H films

We have investigated the temperature dependence of photoluminescence in hydrogenated amorphous silicon-carbon alloys a-Si_1-xC_x:H prepared by glow discharge in the low-power regime. The radiative recombination process, due to photocarriers trapped on band-edge states, is in competition with the thermal escape of the photocarriers into the mobility bands. The model gives a quantitative fit with experiment, without any adjustable parameter, provided the width of the band-edge distribution of states is taken as the width of the conduction band only (measured by “photo-induced infra-red spectroscopy”) and not as the Urbach energy, as it is usually assumed.     

Resolution of the uncertainties in the radiative forcing of HFC-134a

HFC-134a (CF₃CH₂F) is the most rapidly growing hydrofluorocarbon in terms of atmospheric abundance. It is currently used in a large number of household refrigerators and air-conditioning systems and its concentration in the atmosphere is forecast to increase substantially over the next 50-100 years. Previous estimates of its radiative forcing per unit concentration have differed significantly ∼25%. This paper uses a two-step approach to resolve this discrepancy. In the first step six independent absorption cross section datasets are analysed. We find that, for the integrated cross section in the spectral bands that contribute most to the radiative forcing, the differences between the various datasets are typically smaller than 5% and that the dependence on pressure and temperature is not significant. A “recommended' HFC-134a infrared absorption spectrum was obtained based on the average band intensities of the strongest bands. In the second step, the “recommended' HFC-134a spectrum was used in six different radiative transfer models to calculate the HFC-134a radiative forcing efficiency. The clear-sky instantaneous radiative forcing, using a single global and annual mean profile, differed by 8%, between the 6 models, and the latitudinally-resolved adjusted cloudy sky radiative forcing estimates differed by a similar amount. We calculate that the radiative forcing efficiency of HFC-134a is .     

Large anisotropic normal-state magnetoresistance in clean MgB2 thin films

We report a large normal-state magnetoresistance with temperature-dependent anisotropy in very clean epitaxial MgB2 thin films (residual resistivity much smaller than 1 microOmega cm) grown by hybrid physical-chemical vapor deposition. The magnetoresistance shows a complex dependence on the orientation of the applied magnetic field, with a large magnetoresistance (Delta(rho)/(rho)0=136%) observed for the field H perpendicular ab plane. The angular dependence changes dramatically as the temperature is increased, and at high temperatures the magnetoresistance maximum changes to H||ab. We attribute the large magnetoresistance and the evolution of its angular dependence with temperature to the multiple bands with different Fermi surface topology in MgB2 and the relative scattering rates of the sigma and pi bands, which vary with temperature due to stronger electron-phonon coupling for the sigma bands.     

Abnormal Energy Dependence of Photoluminescence Decay Time in InGaN Epilayer

We employ photoluminescence (PL) and time-resolved PL to study exciton localization effect in InGaN epilayers.By measuring the exciton decay time as a function of the monitored emission energy at different temperatures,we have found unusual behaviour of the energy dependence in the PL decay process. At low temperature, the measured PL decay time increases with the emission energy. It decreases with the emission energy at 200K, and remains nearly constant at the intermediate temperature of 12OK. We have studied the dot size effect on the radiative recombination time by calculating the temperature dependence of the exciton recombination lifetime in quantum dots, and have found that the observed behaviour can be well correlated to the exciton localization in quantum dots. This suggestion is further supported by steady state PL results.     

Temperature dependence of the EPR half-field transition in the 1D Heisenberg magnet TMMC

We have observed and analyzed the transverse EPR half-field transition in the quasi-one-dimensional (1D) Heisenberg magnet (CH₃)₄NMnCl₃ (TMMC) between 30 K and 300 K. In spite of a large temperature and angular dependence the width of this transition was found to scale exactly with the EPR main line.     

Temperature dependence of ice optical constants: Implications for simulating the single-scattering properties of cold ice clouds

For a spectrum from ultraviolet to microwave and a temperature range from 160 to 270 K, the optical constants of water ice are compiled on the basis of the Kramers-Kronig relation in conjunction with existing datasets reported in literature. Significant temperature dependence is observed in both the mid-infrared and longer wavelengths. A sensitivity study at wavelengths in the infrared split window region indicates that the temperature dependence of the single-scattering properties of ice crystals is not negligible. Thus, it is necessary to take into account the temperature dependence of ice optical constants when simulating the radiative properties of cirrus clouds for various applications to remote sensing under cirrus cloud conditions.     

Beam polarization effects on top-pair production at the ILC

Full one-loop electroweak corrections for an \(e^-e^+\rightarrow t \bar{t}\) process associated with sequential \(t\rightarrow b \mu \nu _\mu \) decay are discussed. At the one-loop level, the spin-polarization effects of the initial electron and positron beams are included in the total and differential cross sections. A narrow-width approximation is used to treat the top-quark production and decay while including full spin correlations between them. We observed that the radiative corrections due to the weak interaction have a large polarization dependence on both the total and the differential cross sections. Therefore, experimental observables that depend on angular distributions such as the forward–backward asymmetry of the top-production angle must be treated carefully including radiative corrections. We also observed that the energy distribution of bottom quarks is largely affected by the radiative corrections.     

Optical emission from disordered multi-branched ZnO nanorods formed by catalyst-free growth

We have demonstrated catalyst-free fabrication of multi-branched ZnO nanorods and their interesting optical properties. Under Xe lamp excitation (325 nm), it is found that the ethanol rinsing leads to an obviously enhanced ultraviolet emission at room temperature. Moreover, temperature-dependent emission spectra exhibit an anomalous temperature dependence of the ultraviolet emission intensity. This has been analyzed in terms of the competition between the radiative and nonradiative hopping processes using a model developed for disordered porous semiconductors. With femtosecond pulse excitation (640 nm), two-photon-induced photoluminescence is observed, which is confirmed by the quadratic dependence of the emission intensity on the excitation pulse energy.     

Influence of temperature on phosphorescence spectra of Pd-porphine in Shpol’skii matrices

We have studied the temperature dependence of the radiative deactivation of the Pd-porphine triplet states in Shpol’skii matrices in the temperature range 1.2–210 K. A substantial transformation of the phosphorescence spectra is observed as the temperature increases and is due to the inclusion of thermally activated Pd-porphine states in the radiative deactivation processes. The activation energy E_a of these Pd-porphine states is measured in matrices of n-octane and n-nonane. The splitting of the lowest quasidegenerate triplet state ΔE(T₂−T₁) is determined for planar and distorted conformations of the Pd-porphine macrocycle in the n-octane matrix as 40 and 57 cm⁻¹, respectively. The ability to use the temperature dependence of the phosphorescence properties of Pd-porphine to fabricate molecular thermometers for the low-temperature range is analyzed. __________ Translated from Zhurnal Prikladnoi Spektroskopii, Vol. 74, No. 4, pp. 460–464, July–August, 2007.     

有机材料激子发光的温度特性

基于实验和理论模拟研究了12~320 K温度范围内八羟基喹啉铝[tris-(8-hydroxyquinoline)aluminum,Alq]和一种高效红光染料甲基2叔丁基6(1,1,7,7四甲基久咯呢定基9烯基)4H 1吡喃[4-(dicyanomethylene)-2-t-butyl-6(1,1,7,7-tetramethyljulolidyl-9-enyl)-4H-pyran,DCJTB]的光致发光(photoluminescence,PL)随温度的变化,提出三种不同电荷分离程度的激子参与的Alq的稳态光致发光过程,通过拟合参量得到了三种激子的能量差值和辐射复合几率之比,观察并解释了DCJTB发光光谱从200 K以下到室温的升温过程中发生的蓝移。认为变温光致发光有可能用于评估材料的发光和导电性能,比较并讨论了有机和无机发光材料激子发光的温度特性,认为低温下小分子发光材料倾向于分子态,随温度升高逐渐向半导体态转变,Alq在150~190K之间开始发生这种转变,而DCJTB则从300~320 K开始。     

Indirekte Band-Band-Stoßrekombination in Germanium

Photoemission from Ge, caused by carrier injection via ap-n-junction was observed at a wavelength about 1 μm at room temperature. The dependence on energy, temperature and carrier density shows, that there appears a high energy tail of a radiative band to band recombination, which cannot be the tail of the usual radiative recombination in Ge. The intensity of the photoemission is proportional ton ² p ². The experimental results are explained as follows: Via indirect band to band Auger-recombination a hole is brought into the split-off band. In this band, the hole reaches thermal equilibrium with the lattice. While it remains in this band, it is able to recombine radiatively with electrons of the conduction band.     

Warm natural inflation

In warm inflation models there is the requirement of generating large dissipative couplings of the inflaton with radiation, while at the same time, not de-stabilising the flatness of the inflaton potential due to radiative corrections. One way to achieve this without fine tuning unrelated couplings is by supersymmetry. In this Letter we show that if the inflaton and other light fields are pseudo-Nambu–Goldstone bosons then the radiative corrections to the potential are suppressed and the thermal corrections are small as long as the temperature is below the symmetry breaking scale. In such models it is possible to fulfil the contrary requirements of an inflaton potential which is stable under radiative corrections and the generation of a large dissipative coupling of the inflaton field with other light fields. We construct a warm inflation model which gives the observed CMB-anisotropy amplitude and spectral index where the symmetry breaking is at the GUT scale.     

Electron-hole liquid in GaS

Photoluminescence spectra of “pure” GaS are recorded under high excitation levels and low temperatures between 1.9 and 10K. This work reports a new and broad band which dominates the spectrum at high excitation intensities and temperatures near 1.9K. Its dependence on the excitation level is highly superlinear. When temperature is raised from 1.9 to 10K the spectrum observed of low excitation levels is recovered. We interpret the band here observed as due to radiative recombination from electron-hole droplets. From best fitting between experimental spectrum and calculated theoretical curves the critical density and the condensation energy are estimated as, n_c = 4.5 × 10²⁰ cm^?3 and φ = 9.0 meV.     

Y3Ga5O12:Cr3+激光晶体的发光特性

在10K—300K温度范围内测量了Cr3+:Y3Ga5O12晶体对应于2E→4A2与4T2→4A2跃迁谱峰的荧光寿命。得出2E、2T1与4T2态的辐射寿命分别为965.8μs、130.7μs与88.6μs。理论拟合的标准相对误差为2.85%。分析了荧光的热猝灭机理,导出了荧光寿命和辐射量子效率的温度依赖关系。     

Si_（1－x）Ge_x／Si量子阱发光材料的分子束外延生长及其结构研究

采用固源Ｓｉ分子束外延，在较高的生长温度于Ｓｉ（１００）衬底上制备出Ｓｉ１－ｘＧｅｘ／Ｓｉ量子阱发光材料．发光样品的质量和特性通过卢瑟福背散射、Ｘ射线双晶衍射及光致发光评估．背散射实验中观察到应变超晶格的反常沟道效应；Ｘ射线分析表明材料的生长是共度的、无应力释放的，结晶完整性好．低温光致发光主要是外延合金量子阱中带边激子的无声发射和横光学声子参与的激子复合．并讨论了生长温度对量于阱发光的影响．