Deep ultraviolet femtosecond laser tuning of fiber Bragg gratings

A deep ultraviolet femtosecond laser operating at wavelength 258 nm was demonstrated to be effective in trimming fiber Bragg gratings in telecommunication fibers. A smooth tunable resonance wavelength shift of up to 0.52 nm has been observed, corresponding to a refractive index change of ∼5 × 10⁻⁴ after an accumulated laser fluence of 63.3 kJ/cm² at a single pulse fluence of 124 mJ/cm². The ultrafast laser enhancement of ultraviolet photosensitivity response and modification of anisotropic index profile in silica fiber is a powerful technique to precise control of the performance of fiber Bragg grating devices for applications in optical filtering and polarization mode dispersion management.     

Photoluminescence of Si from Si nanocrystal-doped SiO2/Si multilayered sample

A multilayered Si nanocrystal-doped SiO₂/Si (or Si-nc:SiO₂/Si) sample structure is studied to acquire strong photoluminescence (PL) emission of Si via modulating excess Si concentration. The Si-nc:SiO₂ results from SiO thin film after thermal annealing. The total thickness of SiO layer remains 150 nm, and is partitioned equally into a number of sublayers (N = 3, 5, 10, or 30) by Si interlayers. For each N-layered sample, a maximal PL intensity of Si can be obtained via optimizing the thickness of Si interlayer (or d_Si). This maximal PL intensity varies with N, but the ratio of Si to O is nearly a constant. The brightest sample is found to be that of N = 10 and d_Si = 1 nm, whose PL intensity is ∼5 times that of N = 1 without additional Si doping, and ∼2.5 times that of Si-nc:SiO₂ prepared by co-evaporating of SiO and Si at the same optimized ratio of Si to O. Discussions are made based on PL, TEM, EDX and reflectance measurements.     

Optical losses and gain in silicon-rich silica waveguides containing Er ions

Rib-loaded waveguides containing Er³⁺ coupled to Si-nc have been produced by magnetron sputtering and successive thermal annealing to investigate optical gain at 1535 nm. It has been shown that all Er ions are optically active, whereas the fraction that can be excited at high pump rates under non-resonant excitation is strongly limited by confined carrier absorption (CA), up-conversion processes, and mainly by the lack of coupling to the Si-nc. Er³⁺ absorption cross-section is found comparable to that of Er³⁺ in SiO₂, but a dependence with the effective refractive index has been found. Although the presence of Si-nc strongly improves the efficiency of Er³⁺ excitation, it introduces additional optical loss mechanisms, such as CA. These Si-nc losses affect the possibility of obtaining net optical gain. In the present study, they have been minimized by lowering the annealing time of the Er-doped Si-rich oxide. In pump-probe measurements it is shown that signal enhancement of the transmitted signal can be achieved at low pumping rate when the detrimental role of confined CA is attenuated by reducing the annealing time. A maximum signal enhancement of about 1.30 at 1535 nm was observed.     

1.54 μm room temperature emission from Er-doped Si nanocrystals deposited by ECR-PECVD

In this work, silicon nanocrystals (Si-nc) embedded in a silicon-rich silicon oxide (SRSO) matrix doped with Er³⁺ ions for different erbium and silicon concentrations have been deposited by electron-cyclotron resonance plasma-enhanced chemical-vapor-deposition (ECR-PECVD) technique. Their optical properties have been investigated by photoluminescence (PL) and reflectance spectroscopy.Room temperature emission bands centered at ∼1.54 and at 0.75 μm have been obtained for all samples. The most intense emission band at ∼1.54 μm was obtained for samples with concentrations of 0.45% and 39% for erbium and silicon, respectively. Moreover, it has been found that the broad emission band centered at ∼0.75 μm for all samples shows a very strong interference pattern related to the a specific sample structure and a high sample quality.     

Diode-pumped passively Q-switched 912 nm Nd:GdVO4 laser and pulsed deep-blue laser by intracavity frequency-doubling

A diode-end-pumped passively Q-switched 912 nm Nd:GdVO₄/Cr⁴⁺:YAG laser and its efficient intracavity frequency-doubling to 456 nm deep-blue laser were demonstrated in this paper. Using a simple V-type laser cavity, pulsed 912 nm laser characteristics were investigated with two kinds of Cr⁴⁺:YAG crystal as the saturable absorbers, which have the different initial transmissivity (T_U) of 95% and 90% at 912 nm. When the T_U = 95% Cr⁴⁺:YAG was used, as much as an average output power of 2.8 W 912 nm laser was achieved at an absorbed pump power of 34.0 W, and the pulse width and the repetition rate were ∼ 40.5 ns and ∼ 76.6 kHz, respectively. To the best of our knowledge, this is the highest average output power of diode-pumped passively Q-switched Nd³⁺-doped quasi-three-level laser. Employing a BiBO as the frequency-doubling crystal, 456 nm pulsed deep-blue laser was obtained with a maximum average output power of 1.2 W at a repetition rate ∼ 42.7 kHz.     

One-dimensional coupled cavities photonic crystal filters with tapered Bragg mirrors

The performance of one-dimensional (1D) coupled cavities photonic crystal (PC) filters has been analyzed by finite-difference time-domain (FDTD) simulation. It is shown that the addition of tapered Bragg mirrors at each side of the cavities, to create near-Gaussian field profiles for the cavity modes, results in the prediction of near flat-top passband filters with high out-of-band rejection ratio and near unity transmission. The tapered structures suppress the vertical radiation loss to allow optimization of the number of mirror periods for the best filter response whilst guaranteeing high transmission. A critical coupling condition (k = 2L_out/L_in = 1) for flat-top responses in doubly coupled cavities filters is proposed in the tapered structures. An optimized filter for 100 GHz optical communication system are demonstrated with 1 dB bandwidth of 0.17 nm, roll-off of 0.6 dB/GHz, out-of-band signal rejection of 33 dB and transmission of 95%. Further improvement of roll-off and out-of-band rejection is demonstrated in a triply coupled cavities filter.     

Sensitisation of erbium emission by silicon nanocrystals-doped SnO2

SnO₂ thin films undoped and doped with antimony (Sb), erbium (Er) and Si nanocrystals (Si-nc) have been grown on silicon (Si) substrate using sol-gel method. Room-temperature photoluminescence (PL) measurement of undoped SnO₂, under excitation at 280 nm, shows only one broad emission at 395 nm, which is related to oxygen vacancies. The PL of Er³⁺ ions was found to be enhanced after doping SnO₂ with Sb and Si-nc. The excitation process of Er is studied and discussed. The calculation of cross-section suggests a sensitisation of Er PL by Si-nc.     

Vertically emitting, dye-doped polymer laser in the green (λ ∼ 536 nm) with a second order distributed feedback grating fabricated by replica molding

Lasing in the green from a distributed feedback (DFB) structure, based upon a second order grating fabricated by replica molding in a dye-doped UV curable polymer, has been demonstrated. For a Bragg grating having a periodicity and depth of 360 ± 2 nm and 78 ± 5 nm, respectively, a coumarin 540-polymer laser operates at 535.6 nm, which is in agreement with calculations of the photonic band diagram for the structure. The fabricated laser exhibits a linewidth of 0.15 nm, a threshold pump fluence of ∼0.7 mJ cm⁻² at 355 nm, and a slope efficiency of ∼14%. Incorporation of the dye gain medium into a one- (or two-) dimensional photonic crystal and fabrication of the grating by replica molding at room temperature provides an inexpensive approach to fabricating polymer-based DFB lasers on flexible substrates of large area.     

Synthesis and nonlinear optical characterization of SnO2 quantum dots

The present paper demonstrates the preparation and characterization of SnO₂ semiconductor quantum dots. Extremely small ∼1.1 and ∼1.4 nm SnO₂ samples were prepared by microwave assisted technique with a frequency of 2450 MHz. Based on XRD analysis, the phase, crystal structure and purity of the SnO₂ samples are determined. UV-vis measurements showed that, for the both size of SnO₂ samples, excitonic peaks are obtained at ∼238 and ∼245 nm corresponding to ∼1.1 nm (sample 1) and ∼1.4 nm (sample 2) sizes, respectively. STM analysis showed that, the quantum dots are spherical shaped and highly monodispersed. At first, the linear absorption coefficients for two different sizes of SnO₂ quantum dots were measured by employing a CW He-Ne laser at 632.8 nm and were obtained about 1.385 and 4.175 cm⁻¹, respectively. Furthermore, the nonlinear refractive index, n₂, and nonlinear absorption coefficient, β, were measured using close and open aperture Z-scan respectively using the same laser. As quantum dots have strong absorption coefficient to obtain purely effective n₂, we divided the closed aperture transmittance by the corresponding open aperture in the same incident beam intensity. The nonlinear refraction indices of these quantum dots were measured in order of 10⁻⁷ (cm²/W) with negative sign and the nonlinear absorption coefficients were obtained for both in order of 10⁻³ (cm/W) with positive sign.     

Emission properties of a distributed feedback laser cavity containing silicon nanocrystals

We report on light emission from silicon nanocrystals (Si-nc) in a laser cavity. Using modified electrochemical etching of Si wafers we prepare Si-nc with blue-shifted photoluminescence spectrum down to 580-620 nm, embedded at high-volume fractions in a SiO₂-based solid matrix. We insert this active medium into an optically pumped resonator. Since our samples are only partially homogeneous, we cannot use external mirrors in order to achieve optical feedback: we induced optically an internal distributed cavity by intense, spatially periodical excitation. Mode selection was simulated by a simplified theoretical model, based on an approach of multiple reflections. In the framework of the model we discuss the experimentally observed spectral emission changes induced by the distributed cavity.     

Structural and optical characterization of undoped, doped, and clustered ZnO thin films obtained by PLD for gas sensing applications

The synthesis by pulsed laser deposition technique of zinc oxide thin films suitable for gas sensing applications is herein reported. The ZnO targets were irradiated by an UV KrF^* (λ = 248 nm, τ_FWHM ∼7 ns) excimer laser source, operated at 2.8 J/cm² incident fluence value, whilst the substrates consisted of SiO₂(0 0 1) wafers heated at 150 °C during the thin films growth process. The experiments were performed in an oxygen dynamic pressure of 10 Pa. Structural and optical properties of the thin films were investigated. The obtained results have demonstrated that the films are c-axis oriented. Their average transmission in the visible-infrared spectral region was found to be about 85%. The equivalent refractive indexes and extinction coefficients were very close to those of the tabulated reference values. Doping with 0.5% Au and coating with 100 pulses of Au clusters caused but a very slight decrease (with a few percent) of both transmission and refractive index values. The coatings with the most appropriate optical properties as waveguides have been selected and their behavior was tested for butane sensing.     

FePt L10 ordering and grain growth using millisecond pulse laser processing

The structural and magnetic properties of ∼12 nm thick FePt thin films grown on Si substrates annealed using a 1064 nm wavelength laser with a 10 ms pulse have been examined. The A1 to L1₀ ordering phase transformation was confirmed by electron and X-ray diffraction. An order parameter near 50% and a maximum coercivity of 12 kOe were obtained with laser energy densities of 25-32 J/cm². Grain growth, quantified by dark field transmission electron microscopy, occurred during chemical ordering at the laser pulse widths studied.     

Femtosecond and nanosecond laser damage thresholds of doped and undoped triazenepolymer thin films

The influence of pulse duration on the laser-induced damage in undoped or infrared-absorbing-dye doped thin triazenepolymer films on glass substrates has been investigated for single, near-infrared (800 nm) Ti:sapphire laser pulses with durations ranging from 130 fs up to 540 fs and complementarily for infrared (1064 nm) Nd:YAG ns-laser single-pulse irradiation. The triazenepolymer material has been developed for high resolution ablation with irradiation at 308 nm. Post-irradiation optical microscopy observations have been used to determine quantitatively the threshold fluence for permanent laser damage. In contrast to our previous studies on a triazenepolymer with different composition [J. Bonse, S.M. Wiggins, J. Solis, T. Lippert, Appl. Surf. Sci. 247 (2005) 440], a significant dependence of the damage threshold on the pulse duration is found in the sub-picosecond regime with values ranging from ∼500 mJ/cm² (130 fs) up to ∼1500 mJ/cm² (540 fs). Other parameters such as the film thickness (50 nm and 1.1 μm samples) or the doping level show no significant influence on the material behavior upon irradiation. The results for fs- and ns-laser pulse irradiation are compared and analyzed in terms of existent ablation models.     

Competition between green and infrared emission in Er:YLiF4 upconversion lasers

The competition between two laser transitions in Er:YLiF₄ (⁴S_3/2 → ⁴I_15/2 at 551 nm and ⁴S_3/2 → ⁴I_13/2 at 850 nm) is studied using a model based on rate equations. The laser emission is pumped by upconversion at 795 nm; for comparison, we also discuss upconversion pumping by another mechanism, at 970 nm. The conditions that favor laser emission in various regimes on these two transitions are found.     

Radiative quantum efficiency of CdSe/ZnS core-shell colloidal solutions: Size-dependence

Thermo-optical parameters of CdSe/ZnS core-shell nanoparticles suspended in toluene were measured using a thermal lens (TL) technique. TL transient measurements were performed using the mode-mismatched dual-beam (excitation and probe) configuration. A He-Ne laser at λ_p = 632.8 nm was used as the probe beam and an Ar⁺ laser (at λ_e = 514.5 nm) was used as the excitation beam for studies as a function of both core size and concentration of CdSe/ZnS nanocrystals. The fraction thermal load (φ) and radiative quantum efficiencies (η) of the CdSe/ZnS were determined. Dependence on core size (∼2-5 nm) and concentration (∼0.01-0.62 mg/ml) was observed for both φ and η parameters.     

Nano-graphene structures deposited by N-IR pulsed laser ablation of graphite on Si

Thin nano-structured carbon films have been deposited in vacuum by pulsed laser ablation, from a rotating polycrystalline graphite target, on Si 〈1 0 0〉 substrates, kept at temperatures ranging from RT to 800 °C. The laser ablation was performed by a Nd:YAG laser, operating in the near IR (λ = 1064 nm).X-ray diffraction analysis, performed at grazing incidence angle, both in-plane (ip-gid) and out-of-plane (op-gid), has shown the growth of oriented nano-sized graphene particles, characterised by high inter-planar stacking distance (d_? ∼ 0.39 nm), compared to graphite. The film structure and texturing are strongly related both to laser wavelength and substrate temperature: the low energy associated to the IR laser radiation (1.17 eV) generates activated carbon species of large dimensions that, also at low T (∼400 °C), easy evolve toward more stable sp² aromatic bonds, in the plume direction. Increasing temperature the nano-structure formation increases, causing a further aggregation of aromatic planes, voids formation, and a related density (by X-ray reflectivity) drop to very low values. SEM and STM show for these samples a strongly increased macroscopic roughness. The whole process, mainly at higher temperatures, is characterised by a fast kinetic mode, far from equilibrium and without any structural or spatial rearrangement.     

Optical detection of near infrared femtosecond laser-heating of Er-doped ZnO-Nb2O5-TeO2 glass by green up-conversion fluorescence of Er ions

The green up-conversion fluorescence of Er³⁺ ions doped in an nonlinear optical ZnO-Nb₂O₅-TeO₂ glass was observed by using 800 nm excitation from a regenerative femtosecond (fs) Ti:Sapphire laser. The detailed analysis on two fluorescence lines at 526 nm (²H_11/2-⁴I_15/2) and 548 nm (⁴S_3/2-⁴I_15/2) revealed the fs laser heating of the multi-component TeO₂-based glass, which was possibly due to its nonlinear absorption of the host glass via the imaginary part of the third-order optical susceptibility (χ⁽³⁾). The result was compared with that of a Er³⁺-doped aluminosilicate glass under the same irradiation condition. When the fs laser was irradiated to the multicomponent TeO₂-based glass in the power density of 150 TW/cm², the laser spot was heated up to ∼520 K, which however was still less than the glass transition temperature (T_g=688 K). This technique provides a useful sensing method of laser spot temperature even inside transparent materials.     

Laser frequency stabilization at 1.5 microns using ultranarrow inhomogeneous absorption profiles in Er:LiYF4

Single-frequency diode lasers have been frequency stabilized to 1.5 kHz Allan deviation over 0.05-50 s integration times, with laser frequency drift reduced to less than 1.4 kHz/min, using the frequency reference provided by an ultranarrow inhomogeneously broadened Er³⁺:⁴I_15/2→⁴I_13/2 optical absorption transition at a vacuum wavelength of 1530.40 nm in a low-strain LiYF₄ crystal. The 130 MHz full-width at half-maximum (FWHM) inhomogeneous line width of this reference transition is the narrowest reported for a solid at 1.5 μm. Strain-induced inhomogeneous broadening was reduced by using the single isotope ⁷Li and by the very similar radii of Er³⁺ and the Y³⁺ ions for which it substitutes. To show the practicability of cryogen-free cooling, this laser stability was obtained with the reference crystal at 5 K; moreover, this performance did not require vibrational isolation of either the laser or crystal frequency reference. Stabilization is feasible up to T=25 K where the Er³⁺ absorption thermally broadens to ∼500 MHz. This stabilized laser system provides a tool for interferometry, high-resolution spectroscopy, real-time optical signal processing based on spatial spectral holography and accumulated photon echoes, secondary frequency standards, and other applications such as quantum information science requiring narrow-band light sources or coherent detection.     

800 mW/1484 nm highly efficient two-cascaded phosphosilicate Raman fiber laser pumped by Nd:YVO4 solid-state laser

Using 1064 nm CW Nd:YVO₄ solid-state laser as a pump, 1-km phosphosilicate fiber and cascaded cavities with two pairs of fiber Bragg grating mirrors for 1239 and 1484 nm, we obtained a CW 800 mW/1484 nm Raman fiber laser (RFL) for an actual incident pump power of about 2 W (Nd:YVO₄ power of 6.90 W). The conversion efficiency is as high as 40%. To the best of our knowledge, this is the highest conversion efficiency of RFL pumped by solid-state laser. The output power instability at 1484 nm in half an hour is less than 3%. In addition, the numerical simulations are also performed. Good agreement between the results of numerical simulation and the results of the experiment has been demonstrated.     

Planar quarter wave stacks prepared from chalcogenide Ge-Se and polymer polystyrene thin films

Planar quarter wave stacks based on amorphous chalcogenide Ge-Se alternating with polymer polystyrene (PS) thin films are reported as Bragg reflectors for near-infrared region. Chalcogenide films were prepared using a thermal evaporation (TE) while polymer films were deposited using a spin-coating technique. The film thicknesses, d∼165 nm for Ge₂₅Se₇₅ (n=2.35) and d∼250 nm for polymer film (n=1.53), were calculated to center the reflection band round 1550 nm, whose wavelengths are used in telecommunication. Optical properties of prepared multilayer stacks were determined in the range 400-2200 nm using spectral ellipsometry, optical transmission and reflection measurements. Total reflection for normal incidence of unpolarized light was observed from 1530 to 1740 nm for 8 Ge-Se+7 PS thin film stacks prepared on silicon wafer. In addition to total reflection of light with normal incidence, the omnidirectional total reflection of TE-polarized light from 8 Ge-Se+7 PS thin film stacks was observed. Reflection band maxima shifted with varying incident angles, i.e., 1420-1680 nm for 45° deflection from the normal and 1300-1630 nm for 70° deflection from the normal.