A 0.5-1.7 GHz low phase noise ring-oscillator-based PLL for mixed-signal SoCs

This paper describes the design of a fully integrated low phase noise CMOS phase-locked loop for mixedsignal SoCs with a wide range of operating frequencies.The design proposes a multi-regulator PLL architecture,in which every noise-sensitive block from the PLL top level is biased from a dedicated linear or shunt regulator,reducing the parasitic noise and spur coupling between different PLL building blocks.Supply-induced VCO frequency sensitivity of the PLL is less than 0.07%-f_(vco)/1%-V_(DD).The design...     

A 2 GHz surface transverse wave oscillator with low phase noise

A hybrid oscillator at 1.9805 GHz using acoustic surface transverse wave (STW) delay lines operating at the third harmonic as the frequency controlling element is discussed. The STW delay lines were fabricated on 37.5°-rotated Y-cut quartz substrates with a photolithographic technique. A very thin metallization (25 nm) was used to obtain low insertion loss. A split isolated electrode design was used for the transducers. The Q-value and the untuned insertion loss of the STW filter were 3400 and 21 dB, respectively. The phase noise and temperature stability of the oscillator were characterized. At a power output of 6.5 dBm a single-sideband phase noise-to-carrier ratio of -100 dBc/Hz at 1 kHz was attained     

Characterisations of absolute phase noise in fibre-laser modelocked by sapphire-loaded cavity resonator oscillator at 10 GHz

Results from characterisations of the absolute phase noise in a fibre laser modelocked, at 10.24 GHz, by a sapphire-loaded cavity resonator oscillator, are reported. From the phase noise measured, an absolute timing jitter of /spl sim/2.48 and /spl sim/14.3 fs, respectively, for frequency-offset (/spl Delta/f) ranges that spanned /spl Delta/f=100 Hz to 1 MHz, and /spl Delta/f=100 Hz to 40 MHz, were estimated.     

Event-driven Simulation and modeling of phase noise of an RF oscillator

A novel simulation technique that uses an event-driven VHDL simulator to model phase noise behavior of an RF oscillator for wireless applications is proposed and demonstrated. The technique is well suited to investigate complex interactions in large system-on-chip systems, where traditional RF and analog simulation tools do not work effectively. The oscillator phase noise characteristic comprising of flat electronic noise, as well as, upconverted thermal and 1/f noise regions are described using time-domain equations and simulated as either accumulative or nonaccumulative random perturbations of the fundamental oscillator period. The VHDL simulation environment was selected for its high simulation speed, the direct correlation between the simulated and built circuits and its ability to model mixed-signal systems of high complexity. The presented simulation technique has been successfully applied and validated in a Bluetooth transceiver integrated circuit fabricated in a digital 130-nm process.     

光电振荡器的相位噪声特性

与传统的微波振荡器相比,光电振荡器利用光纤储能,能够产生低相位噪声的微波信号.论述了光电振荡器的特点、基本结构和工作原理,推导了相位噪声的表达式,对其特性进行了理论研究,并构建了光电振荡器的实验.理论分析表明,光纤延时、激光器的相对强度噪声以及微波放大器的噪声系数会影响光电振荡器的相位噪声,为减小相位噪声提供了理论依据.实验测量了3种光纤延时下的相位噪声,并与理论分析的结果进行了对比,证明了理论分析的正确性.     

Planar realization of low phase noise 15/30 GHz oscillator/doubler using surface mount transistors

This paper presents the application of a novel high-Q planar waveguide resonator for microwave oscillator design. The waveguide cavity is made in printed-circuit-board process, first using a routed cut followed by a plated via-through-hole. Measurements show that the oscillator stabilized by the resonator delivers an output power of 14 dBm at 15 GHz and a phase noise of -98 dBc/Hz at 100 kHz offset from the carrier, under 5-V single bias. Experiments indicate the predominance of the waveguide resonator by a 13-dB phase noise improvement at 100 kHz offset against the microstrip oscillator.     

Low phase noise heterojunction bipolar transistor oscillator

A low phase noise, heterojunction bipolar transistor (HBT) oscillator has been designed and fabricated for operation at X-band. The common emitter oscillator employs a high-Q dielectric resonator as the parallel feedback element between the base and collector terminals. Series capacitive feedback is used in the emitter to enhance the oscillator's negative output impedance. Single-sideband FM noise levels of -76 dBc/Hz and -102 dBc/Hz have been achieved at 1 kHz and 10 kHz frequency offsets, respectively, for an 11.06 GHz carrier frequency. This is one of the lowest phase noise levels ever reported for an X-band solid-state transistor oscillator.<>     

Ultra low phase noise sapphire-SiGe HBT oscillator

A state of the art C-band oscillator is presented. It is based on a high Q WGM sapphire resonator combined with a low residual phase noise SiGe HBT amplifier. A two oscillator experiment performed on this system has revealed a phase noise level of -133 dBc/Hz at 1 kHz offset from the 4.85 GHz carrier, which is the best published phase noise result for a single loop, free running microwave oscillator     

Theory of oscillator phase noise in correlative tracking systems

Structure functions are introduced into the theory of correlative tracking systems and how frequency and phase instability enters naturally into the system performance equations is shown. Both thetau-domain andf-domain peformance is characterized and a Mellin transform theory relating the two is given. The theory is applied to first-, second-, and third-order systems containing arbitrary phase detectors.     

Quasi-planar K-band push-push low phase noise oscillator stabilized by cavity resonator

The results of developing a K-band (24 GHz) push-push low phase noise transistor oscillator have been presented. This oscillator is stabilized by a rectangular resonant metallic cavity. The power level of output signal is ?9.5 dBm, the fundamental harmonic suppression is 21 dB. Single sideband (SSB) phase noise spectral density of ?98 dBc/Hz at 10 kHz and ?128 dBc/Hz at 100 kHz offset from the carrier frequency is at the level of dielectric resonator oscillators (DRO) scaled to the same frequency. The oscillator features a compact size, low cost quazi-planar design and it is built using commercially available off the shelf parts.     

3.1~4.9 GHz宽带低相位噪声频率源的研制

基于LTC6946-2频率合成器设计了3.1~4.9 GH频率源,给出了参数设计过程和实物测试结果。该频率源具有宽带、低相位噪声、低杂散、低成本和占用面积小等特点。经过硬件调试达到的主要指标为:输出频率3.1~4.9 GHz,步进10 MHz,相位噪声优于-97.8 dBc/Hz@1 kHz和-99.3 dBc/Hz@10 kHz,杂散优于-90 dBc。     

Very low phase noise RF quadrature oscillator architecture

An architecture for RF quadrature oscillators is presented, which, according to simulations, shows a figure of merit some 20 dB higher than that of other quadrature oscillators. The new quadrature oscillator compares favourably even with a state-of-the-art design of the popular negative-resistance differential oscillator     

Quasi-optical measurement of carcinotron phase noise at 350 GHz

Phase noise of a single carcinotron operating at 350 GHz, at offset frequencies in the range 10⁵-10⁷ Hz, from the carrier has been measured. A quasi-optical analogue of the delay line frequency discriminator method was used, demonstrating a simple method capable of measuring phase noise in the (sub)mm region. The results obtained are of practical use in the design of phase locked systems, in the wavelength region used     

An alternative method for transistor low frequency noise estimation by measuring phase noise of test oscillator

In this paper we suggest an alternative method for the analysis of low frequency noise of transistors based on measurements of phase noise of a test oscillator. This method is demonstrated by experimental results obtained with a simple test oscillator with HEMT, and central frequency of 13.769 GHz. The main contribution to phase noise of the test oscillator comes from up conversion of transistor LF noise. This idea and the method can be used for the selection of transistors for high frequency application or for design of test circuit in RF IC manufacture.     

电子战接收机对本振相位噪声的需求研究

复杂而密集的电子信号对电子战接收机的性能提出了越来越高的要求,本振的相位噪声是电子战接收机的重要指标之一,对接收机的动态范围和数字误码率有着重要影响,针对实际工程中对相位噪声需求难以评估的问题,初步分析了相位噪声对接收机动态范围和数字误码率的影响,并通过实例进行了计算分析,可供工程技术人员参考。     

本振相位噪声对接收机性能的影响

针对工程中本振相位噪声对接收机的影响常难以估量的问题,提出利用等效相位白噪声谱密度进行评估的方法.通过分析相位噪声的产生及其对剩余误码率和动态范围的影响机理,仿真了不同相位噪声对误码率的影响程度.通过仿真结果可知:相位噪声对接收机性能具有重要的影响,工程中应针对不同的应用场合要求合理的相位噪声指标.     

A filtering technique to lower LC oscillator phase noise

Based on a physical understanding of phase-noise mechanisms, a passive LC filter is found to lower the phase-noise factor in a differential oscillator to its fundamental minimum. Three fully integrated LC voltage-controlled oscillators (VCOs) serve as a proof of concept. Two 1.1-GHz VCOs achieve -153 dBc/Hz at 3 MHz offset, biased at 3.7 mA from 2.5 V. A 2.1-GHz VCO achieves -148 dBc/Hz at 15 MHz offset, taking 4 mA from a 2.7-V supply. All oscillators use fully integrated resonators, and the first two exceed discrete transistor modules in figure of merit. Practical aspects and repercussions of the technique are discussed     

Balanced Colpitt oscillator MMICs designed for ultra-low phase noise

Balanced voltage-controlled oscillator (VCO) monolithic microwave integrated circuits (MMICs) based on a coupled Colpitt topology with a fully integrated tank are presented utilizing SiGe heterojunction bipolar transistor (HBT) and InGaP/GaAs HBT technologies. Minimum phase noise is obtained for all designs by optimization of the tank circuit including the varactor, maximizing the tank amplitude, and designing the VCO for Class C operation. Fundamental and second harmonic VCOs are evaluated. A minimum phase noise of less than -112 dBc at an output power of 5.5 dBm is achieved at 100-kHz carrier offset and 6.4-GHz oscillation frequency for the fundamental InGaP/GaAs HBT VCO. The second harmonic VCO achieves a minimum measured phase noise of -120 dBc at 100 kHz at 13 GHz. To our best knowledge, this is the lowest reported phase noise to date for a varactor-based VCO with a fully integrated tank. The fundamental frequency SiGe HBT oscillator achieves a phase noise of -108 dBc at 100 kHz at 5 GHz. All MMICs are fabricated in commercial foundry MMIC processes.     

X波段低相噪跳频源的设计与实现

结合直接数字频率合成(DDS)和锁相环(PLL)技术完成了X波段低相噪本振跳频源的设计。文章通过软件仿真重点分析了本振跳频源的低相噪设计方法,同时给出了主要的硬件选择和详细电路设计过程。最后对样机的测试结果表明,本方案具有相位噪声低、频率控制灵活等优点,满足了实际工程应用。