Laser Induced Damage Threshold at 355 and 1064nm of Ta2O5 Films of Different Phases

Ta2O5 films axe deposited on fused silica substrates by conventional electron beam evaporation method. By annealing at different temperatures, Ta2 O5 films of amorphous, hexagonal and orthorhombic phases are obtained and confirmed by x-ray diffractometer （XRD） results. X-ray photoelectron spectroscopy （XPS） analysis shows that chemical composition of all the films is stoichiometry. It is found that the amorphous Ta2 O5 film achieves the highest laser induced damage threshold （LIDT） either at 355 or 1064nm, followed by hexagonal phase and finally orthorhombic phase. The damage morphologies at 355 and 1064nm are different as the former shows a uniform fused area while the latter is centred on one or more defect points, which is induced by different damage mechanisms. The decrease of the LIDT at 1064nm is attributed to the increasing structural defect, while at 355nm is due to the combination effect of the increasing structural defect and decreasing band gap energy.     

Influence of Different Substrates on Laser Induced Damage Thresholds at 1064nm of Ta2O5 Films

Ta2O5 films are prepared on Si, BK7, fused silica, antireflection （AR） and high reflector （HR） substrates by electron beam evaporation method, respectively. Both the optical property and laser induced damage thresholds （LIDTs） at 1064 nm of Ta2O5 films on different substrates are investigated before and after annealing at 673 K for 12 h. It is shown that annealing increases the refractive index and decreases the extinction index, and improves the O/Ta ratio of the Ta2O5 films from 2.42 to 2.50. Moreover, the results show that the LIDTs of the Ta2O5 films are mainly correlated with three parameters： substrate property, substoichiometry defect in the films and impurity defect at the interface between the substrate and the films. Details of the laser induced damage models in different cases are discussed.     

Laser-induced damage of Ta2O5/SiO2 narrow-band interference filters under different 1064 nm Nd:YAG laser modes

The laser-induced damage (LID) behavior of narrow-band interference filters was investigated with a Nd:YAG laser at 1064 nm under single-pulse mode and free-running mode. The absorption measurement of such coatings was performed with surface thermal lensing (STL) technique. The damage morphologies under the two different laser modes were also studied in detail. It was found that all the filters exhibited a pass-band-center-dependent absorption and laser-induced damage threshold (LIDT) behavior, but the damage morphologies were diverse. The explanation was given with the analysis of the electric field distribution and the operational behavior of the irradiation laser.     

532 nm HfO2/SiO2高反膜的激光预处理效应

采用单台阶能量光栅扫描以及R-on-1测试两种不同预处理方式研究了激光预处理技术对532 nm HfO2/SiO2高反膜的阈值提升效果。用Nd:YAG二倍频激光对电子束蒸发制备的532 nm HfO2/SiO2高反膜进行1-on-1损伤阈值测试,然后分别进行单台阶能量光栅扫描以及R-on-1测试。通过对损伤概率以及损伤形貌的分析,发现激光预处理能够去除薄膜内低阈值缺陷,达到提高损伤阈值的目的,损伤阈值分别提高38%和30%。     

532nm HfO_2/SiO_2高反膜的激光预处理效应

采用单台阶能量光栅扫描以及R-on-1测试两种不同预处理方式研究了激光预处理技术对532nm HfO2/SiO2高反膜的阈值提升效果。用Nd:YAG二倍频激光对电子束蒸发制备的532nm HfO2/SiO2高反膜进行1-on-1损伤阈值测试,然后分别进行单台阶能量光栅扫描以及R-on-1测试。通过对损伤概率以及损伤形貌的分析,发现激光预处理能够去除薄膜内低阈值缺陷,达到提高损伤阈值的目的,损伤阈值分别提高38%和30%。     

三硼酸锂晶体上1064 nm,532 nm,355 nm三倍频增透膜的设计

采用矢量法设计了三硼酸锂晶体上1064 nm、532 nm和355 nm三倍频增透膜,结果表明1064 nm、532 nm和355 nm波长的剩余反射率分别为0.0017%、0.0002%和0.0013%。根据误差分析,薄膜制备时沉积速率精度控制在 5.5%时,1064 nm、532 nm和355 nm波长的剩余反射率分别增加至0.20%、0.84%和1.89%。当材料折射率的变化控制在 3%时,1064 nm处的剩余反射率增大为0.20%,532 nm和355 nm处分别达0.88%和0.24%。与薄膜物理厚度相比,膜层折射率对剩余反射率的影响大。对膜系敏感层的分析表明,在1064 nm和355 nm波长,从入射介质向基底过渡的第二层膜的厚度变化对剩余反射率的影响最大,其次是第一膜层。在532 nm波长,第一和第三膜层是该膜系的敏感层。同时发现,由于薄膜材料的色散,1064 nm5、32 nm和355 nm波长的剩余反射率分别增加至0.15%、0.31%和1.52%。     

Structural and compositional changes in ion-bombarded Ta2O5

A detailed study of the effect of heavy-ion bombardment on Ta₂O₅ has been undertaken using a combination of radioactive tracer techniques, electron microscopy, and Rutherford backscattering. Crystalline Ta₂O₅ is amorphized at ~6 × 10¹³ ions cm^?2, while at a dose of ~5 × 10¹⁶ ions cm^?2 the electron microscopy reveals the development of random grains of a new crystalline phase. By ~1 × 10¹⁷ ions cm^?2 the grains are not yet overlapping but still yield a diffraction pattern consistent with either δ-Ta-O (not to be confused with TaO) or Ta_1?xO₂, thus indicating that Ta₂O₅, like most other transition-metal oxides, is subject to preferential sputtering. Preferential sputtering was confirmed by backscattering analysis of specimens bombarded to high doses, where the average surface composition was found to be Ta_1.8±0.2O₂ or, equivalently, Ta₂O_2.2±0.2. The surface alteration had an average composition independent of the mass and energy of the incident ions.     

Comparison of laser-induced damage in Ta2O5 and Nb2O5 single-layer films and high reflectors

Ta2O5 and Nb2O5 films are deposited on BK7 glass substrates using an electron beam evaporation method and are annealed at 673 K in the air.In this letter,comparative studies of the optical transmittance,microstructure,chemical composition,optical absorption,and laser-induced damage threshold(LIDT) of the two films are conducted.Findings indicate that the substoichiometric defect is very harmful to the laser damage resistance of Ta2O5 and Nb2O5 films.The decrease of absorption improves the LIDT in films deposited by the same material.However,although the absorption of the Ta2O5 single layer is less than that of the Nb2O5 single layer,the LIDT of the former is lower than that of the latter.High-reflective(HR) coatings have a higher LIDT than single layers due to the thermal dissipation of the SiO2 layers and the decreased electric field intensity(EFI).In addition,the Nb2O5 HR coating achieves the highest LIDT at 25.6 J/cm 2 in both single layers and HR coatings.     

降雨对532nm和1064nm激光传输的衰减特性研究

降雨会对激光信号产生严重的衰减,从而给激光目标探测的应用带来一定影响.激光在降雨中的传输衰减已在红外波段做了大量的实验研究,而可见光波段激光在雨中的传输衰减特性还未见报道.基于夫琅禾费衍射和几何光学散射理论,建立雨滴对532 nm绿激光和1064 nm近红外激光光束的传输衰减模型,对比分析两波长激光在不同降雨量下的衰减...     

Drilling rate of five metals with picosecond laser pulses at 355, 532, and 1064 nm

Experimental results on picosecond laser processing of aluminum, nickel, stainless steel, molybdenum, and tungsten are described. Hole drilling is employed for comparative analysis of processing rates in an air environment. Drilling rates are measured over a wide range of laser fluences (0.05–20?J/cm²). Experiments with picosecond pulses at 355?nm are carried out for all five metals and in addition at 532?nm, and 1064?nm for nickel. A comparison of drilling rate with 6-ps and 6-ns pulses at 355?nm is performed. The dependence of drilling rate on laser fluence measured with picosecond pulses demonstrates two logarithmic regimes for all five metals. To determine the transition from one regime to another, a critical fluence is measured and correlated with the thermal properties of the metals. The logarithmic regime at high-fluence range with UV picosecond pulses is reported for the first time. The energy efficiency of material removal for the different regimes is evaluated. The results demonstrate that UV picosecond pulses can provide comparable quality and higher processing rate compared with literature data on ablation with near-IR femtosecond lasers. A significant contribution of two-photon absorption to the ablation process is suggested to explain high processing rate with powerful UV picosecond pulses.     

基频HfO2/SiO2高反射薄膜激光损伤生长特性

以1064 nm波长作用下的HfO2/SiO2高反射薄膜为研究对象,研究了高反射薄膜在损伤生长过程中分层剥落初始损伤结构的变化规律、损伤形貌特征和损伤生长阈值等特性。实验结果表明：分层剥落初始损伤结构的横向尺寸随激光能量密度的增加呈分段线性增长,破斑沿纵向拓展的损伤生长阈值是沿横向拓展的损伤生长阈值的2倍以上,初始损伤结构横向尺寸的生长率与能量密度呈指数关系,且生长阈值随着辐照次数的增加显著降低。     

基频HfO2/SiO2高反射薄膜激光损伤生长特性

以1064 nm波长作用下的HfO2/SiO2高反射薄膜为研究对象,研究了高反射薄膜在损伤生长过程中分层剥落初始损伤结构的变化规律、损伤形貌特征和损伤生长阈值等特性。实验结果表明:分层剥落初始损伤结构的横向尺寸随激光能量密度的增加呈分段线性增长,破斑沿纵向拓展的损伤生长阈值是沿横向拓展的损伤生长阈值的2倍以上,初始损伤结构横向尺寸的生长率与能量密度呈指数关系,且生长阈值随着辐照次数的增加显著降低。     

Waveguiding and photoluminescence in Er-doped Ta2O5 planar waveguides

The optimization of erbium-doped Ta₂O₅ thin film waveguides deposited by magnetron sputtering onto thermally oxidized silicon wafer is described. Optical constants of the film were determined by ellipsometry. For the slab waveguides, background losses below 0.4 dB/cm at 633 nm have been obtained before post-annealing. The samples, when pumped at 980 nm yielded a broad photoluminescence spectrum (FWHM∼50 nm) centred at 1534 nm, corresponding to ⁴I_13/2-⁴I_15/2 transition of Er³⁺ ion. The samples were annealed up to 600 °C and both photoluminescence power and fluorescence lifetime increase with post-annealing temperature and a fluorescence lifetime of 2.4 ms was achieved, yielding promising results for compact waveguide amplifiers.     

Emission features of Ho ion in Nb2O5, Ta2O5 and La2O3 mixed Li2O-ZrO2-SiO2 glasses

Li₂O-ZrO₂-SiO₂: Ho³⁺ glasses mixed with three interesting d-block elemental oxides, viz., Nb₂O₅, Ta₂O₅ and La₂O₃, were prepared. Optical absorption and photoluminescence spectra of these glasses have been recorded at room temperature. The luminescence spectra of Nb₂O₅ and Ta₂O₅ mixed Li₂O-ZrO₂-SiO₂ glasses (free of Ho³⁺ ions) have also exhibited broad emission band in the blue region. This band is attributed to radiative recombination of self-trapped excitons (STEs) localized on substitutionally positioned octahedral Ta⁵⁺ and Nb⁵⁺ ions in the glass network. The Judd-Ofelt theory was successfully applied to characterize Ho³⁺ spectra of all the three glasses. From this theory various radiative properties, like transition probability A, branching ratio β_r and the radiative lifetime τ_r, for ⁵S₂ emission levels in the spectra of these glasses have been evaluated. The radiative lifetime for ⁵S₂ level of Ho³⁺ ions has also been measured and quantum efficiencies were estimated. Among the three glasses studied the La₂O₃ mixed glass exhibited the highest quantum efficiency. The reasons for such higher value have been discussed based on the relationship between the structural modifications taking place around the Ho³⁺ ions.     

Micromachining of copper using Nd:YAG laser radiation at 1064, 532, and 355 nm wavelengths

The interaction phenomena of nanosecond time period Q-switched diode-pumped Nd:YAG laser pulses using 1064, 532 and 355 nm with 0.25 mm thick pure-copper foil was investigated at an incident laser intensity range of 0.5–57.9 GW/cm². For each sample, etch rate and surface structure were determined. Analysis of the results of the tests included scanning electron microscopy (SEM). A maximum etch rate of 13.3 μm per pulse was obtained for the etch rate tests carried out at 532 nm. The maximum etch rate obtainable for 1064 nm was 2.21 μm per pulse, and for 355 nm, 6.68 μm per pulse. The dramatic decrease in etch rate observed when processing at 1064 nm is thought to occur due the highly reflective nature of copper as the interaction wavelength is increased, plus the nature of the plasma formed above the material during the high-intensity laser–material interaction. This plasma then imparts energy to the surface of the processed area leading to surface melting of the area surrounding the hole as can be seen by the SEM photographs.     

金属醇盐法制备Ta2O5气凝胶

以乙醇钽为前驱物,采用金属醇盐溶胶-凝胶技术,获得了Ta2O5湿凝胶,分析了不同条件下的溶胶-凝胶过程,并初步探讨了凝胶过程机理。Ta2O5的溶胶-凝胶过程主要受到水量、催化剂用量及钽源浓度等因素的影响：体系在强酸性条件下凝胶,且随着酸性的增强,体系凝胶时间明显缩短;当水量较少时,凝胶时间随水量的增加而增加,但当水量增加到一定程度时,体系凝胶时间基本不变;实验证明,通过增大溶剂用量,体系凝胶时间延长,气凝胶理论密度降低。通过对溶胶-凝胶过程的控制,结合超临界干燥技术,获得了密度低至44 mg/cm3的Ta2O5气凝胶样品。     

Ta2O5/Ta界面分析的新模型

对Ta₂O₅/Ta样品界面区的深度剖面曲线进行了研究。基于离子溅射引起影响层存在的考虑,提出一种解释该曲线的新模型。通过此模型能很好地拟合实验曲线,并反映了溅射过程中的离子混合效应、原子堆积效应及相应的特征参数。样品由阳极氧化法制得,其厚度为500埃。表面分析在PHI-590型扫描俄歇微探针上完成,所有测量均在室温下进行。研究表明:深度剖面曲线并不符合误差函数分布;影响层的厚度为30—50埃,它是进行深度剖面分析时,决定元素俄歇信号强度的第一位重要因素;深度剖面 关键词：     

Charge trapping at Pt/high-k dielectric (Ta2O5) interface

A detailed analysis of the effects of constant low current injection was done, both in accumulation (J=0.001-0.2 mA cm⁻²) and in inversion (J=0.001-0.04 mA/cm²). The samples under investigation were metal-insulator-silicon structures containing high-k dielectric Ta₂O₅ radio frequency sputtered on p-type Si wafers, with Pt metal gate electrodes. The obtained results were compared with the ones obtained for Al gate samples. This experiment confirms the occurrence of charge trapping in the case of high-work-function Pt as metal. The effect has been attributed to emitting of electrons into the Pt conduction band during which creation of empty traps in the dielectric occurs, which then attract electrons injected in the dielectric. In order to examine the reversibility of the process, successive short runs as well as long runs (up to 10000 s) were performed.     

三倍频分光膜在1064 nm的破斑特性研究

采用电子束蒸发方式制备了两种不同材料组合的分光膜,分别对其在波长1064 nm激光辐照下的损伤阈值进行了测试,用Alpha-Step 500台阶仪对破斑进行了深度测量。实验结果表明,破斑呈现出表面层的剥落和深坑破坏两种形态。表面层的剥落深度在一定范围内不随能量密度的变化而变化;深坑破坏深浅不一,是膜内缺陷融化、汽化及喷发的综合作用的结果,是损伤阈值降低的主要原因。