微接触印刷技术在ITO基底上快速转移Au纳米粒子图案

采用无氰化学镀金法在聚二甲基硅氧烷(PDMS)印章表面镀金, 通过微接触印刷技术将PDMS印章上的Au 纳米粒子(AuNPs)分别转移到氧化铟锡(ITO)透明导电膜玻璃, 修饰了(3-巯基丙基)三甲氧基硅烷(MPTMS)的ITO基底(MPTMS/ITO)和表面电镀了铜膜的ITO(Cu/ITO)表面上, 同时形成有序的结构或者图案.通过场发射扫描电镜(FE-SEM), 原子力显微镜(AFM)和显微共聚焦激光拉曼光谱仪等对实验结果进行表征.结果表明, 该转移AuNPs的方法对基底表面特性并无特殊要求, 是一种简单、快速、无污染、低成本的AuNPs转移技术, 而且转移了AuNPs的ITO基底具有表面增强拉曼光谱(SERS)活性, 有望在SERS中有所应用.     

Observation of Organic Thin Film Surface by Atomic Force Microscopy

The 8-hydroxyquinoline neodymium(Ndq3) organic thin films deposited on the cleaned indium/tin oxide (ITO) at different deposition rates with the same vacuity (133.3×10^-5 Pa) were revealed by atomic force microscopy (AFM). Organic devices with one layer of Ndq3 as the e-type conductive material at different deposition rates sandwiched between ITO and aluminum electrodes have been fabricated. respectively. Evidence suggests that the current-voltage (I-V) characteristics were determined by the uniformity of organic film which was controlled by the deposition conditions.     

Substrate-induced anisotropy of c-axis textured NaxCoO2 thin films

Na_xCoO₂ [x = 0.51, 0.54, and 0.59] thin films have been grown on SrTiO₃ (100)-oriented single crystals with a 5° vicinal cut towards [010] by pulsed laser deposition. We analysed the films by X-ray diffractometry, atomic force microscopy (AFM), and dc-transport measurements. X-ray diffraction patterns of the films show single phase and c-axis textured growth with the film plane closely aligned to the [001]-direction of 5° miscut SrTiO₃ (001) substrates. In addition to the structural analysis of these films we performed transport measurements along and perpendicular to the substrate tilt direction and determined the resistivity anisotropy as a function of temperature. The results enable the development of a strategy for the fabrication of Na_xCoO₂ based thermoelectric thin film devices.     

结晶性间同立构1,2-聚丁二烯的单晶结构

近十几年来 ,结晶性间同立构 1 ,2 -聚丁二烯引起人们的广泛关注 ,但绝大多数研究工作集中在聚合物的制备、物理性质和应用方面[1～ 3] ,对于其结晶行为和晶体结构则未见报道 .原因是间同立构 1 ,2 -聚丁二烯分子侧链含有大量的双键 ,在较高温度下很容易交联 ,特别是高间规度的聚合物 ,由于其熔融温度高 (>2 0 0℃ )则更易产生交联 ,这给结晶行为和结构研究带来很大困难 .结晶性间同立构 1 ,2 -聚丁二烯的晶体结构为平面锯齿链正交堆砌 ,Pacm空间群[4 ] .我们曾报道了结晶性间同立构 1 ,2 -聚丁二烯的合成和溶液浇铸膜的板条状结构[5] ,本…     

Nanoscale conductivity mapping of hybrid nanoarchitectures: ultrathin poly(o-phenylenediamine) on mesoporous manganese oxide ambigels

We use conductive-probe atomic force microscopy (CP-AFM) to characterize and image hybrid electrode structures comprising mesoporous manganese oxide (MnO2) ambigel nanoarchitectures coated with an ultrathin (<10 nm) electrodeposited layer of poly(o-phenylenediamine), PPD. Native MnO2 ambigel films, supported on indium tin oxide (ITO) substrates, exhibit spatially uniform conductivity that correlates well with the topography of the MnO2 film, confirming that the nanoscopic oxide network is effectively wired to the underlying ITO substrate. Following the self-limiting electrodeposition of the PPD coating onto the high-surface-area (>200 m2 g(-1)) MnO2 ambigel, the resulting hybrid structures display an approximately 20-fold reduction in conductivity, as determined from CP-AFM measurements. The CP-AFM imaging studies confirm that the ultrathin, insulating PPD layer conformally and homogeneously coats the conductive nanoarchitecture. CP-AFM imaging of PPD-MnO2 hybrid electrodes following electrochemical cycling in an aqueous acid electrolyte reveals that the ultrathin PPD coating serves as an effective barrier to the electrolyte, protecting the underlying MnO2 nanoarchitecture from electrochemical dissolution.     

氮掺杂二氧化钛-氧化镍双层薄膜的光电致色特性

以金属钛为靶材、O2/N2/Ar混合气氛为溅射气体,在导电玻璃(ITO)表面磁控溅射一层薄膜,再经300-500℃退火处理制备了氮掺杂TiO2薄膜.采用X射线衍射(XRD)、X光电子能谱(XPS)、扫描电子显微镜(SEM)和紫外-可见吸收光谱等对薄膜的微观结构、光学特性和光电化学性能等进行了研究.进而采用化学沉积的方法在TiO2-xNx薄膜表面沉积上一层多孔NiO薄膜,研究表明,制备的ITO/TiO2-xNx/NiO双层薄膜具有明显的光电致色特性,400℃退火处理的氮掺杂TiO2薄膜具有最高的光电流响应,经氙灯照射1h后,薄膜从无色变成棕色,500nm波长处光透过率从79.0%下降至12.6%.     

Photo switchable pendant furyl and thienyl fulgimides containing polypyrroles

We report the new pendant furyl and thienyl fulgimides photochromic switch bearing polypyrroles. The functionalized pyrrole monomers synthesized and structures are ascertained by NMR and mass spectral techniques. The yield of fulgides and fulgimides are improved by using trifluoroacetic anhydride (TFA) as a dehydrating agent. The photo-switching properties of fulgimides monomers are explained by electronic structures of HOMO–LUMO of the monomers using Gaussian 03 packages. The electro-active polymer films deposited on indium tin oxide (ITO) electrodes are characterized by cyclic voltammetry and atomic force microscopy (AFM). The electrochemically formed thin films undergoes photo-switching between open and closed state of fulgimides moiety. The photo-switching properties of the polymer films have been confirmed by UV/vis spectroscopy. Though the films are photochemically stable, their mechanical stability with respect to adhesion to electrode is found to be sensitive to the solvent and electrode material.     

Local current mapping and patterning of reduced graphene oxide

Conductive atomic force microscopy (C-AFM) has been used to correlate the detailed structural and electrical characteristics of graphene derived from graphene oxide. Uniform large currents were measured over areas exceeding tens of micrometers in few-layer films, supporting the use of graphene as a transparent electrode material. Moreover, defects such as electrical discontinuities were easily detected. Multilayer films were found to have a higher conductivity per layer than single layers. It is also shown that a local AFM-tip-induced electrochemical reduction process can be used to pattern conductive pathways on otherwise-insulating graphene oxide. Transistors with micrometer-scale tip-reduced graphene channels that featured ambipolar transport and an 8 order of magnitude increase in current density upon reduction were successfully fabricated.     

Modification of indium-tin oxide electrodes with thiophene copolymer thin films: optimizing electron transfer to solution probe molecules

We describe the modification of indium-tin oxide (ITO) electrodes via the chemisorption and electropolymerization of 6-{2,3-dihydrothieno[3,4-b]-1.4-dioxyn-2-yl methoxy}hexanoic acid (EDOTCA) and the electrochemical co-polymerization of 3,4-ethylenedioxythiophene (EDOT) and EDOTCA to form ultrathin films that optimize electron-transfer rates to solution probe molecules. ITO electrodes were first activated using brief exposure to strong haloacids, to remove the top approximately 8 nm of the electrode surface, followed by immediate immersion into a 50:50 EDOT/EDOTCA co-monomer solution. Potential step electrodeposition for brief deposition times was used to grow copolymer films of thickness 10-100 nm. The composition of these copolymer films was characterized by solution depletion studies of the monomers and atomic force microscopy (AFM), X-ray photoelectron spectroscopy, and Fourier transform infrared spectroscopy (reflection-absorption infrared spectroscopy (RAIRS)) of the product films. The spectroscopic data suggest that the composition of the copolymer approaches 80% EDOTCA when electropolymerization occurs from concentrated (10 mM) solutions. AFM characterization shows that electrodeposited poly(EDOT)/poly(EDOTCA) (PEDOT/PEDOTCA) films are quite smooth, with texturing on the nanometer scale. RAIRS studies indicate that these films consist of a combination of EDOTCA units with noninteracting -COOH groups and adjacent hydrogen-bonded -COOH groups. The EDOTCA-containing polymer chains appear to grow as columnar clusters from specific regions, oriented nearly vertically to the substrate plane. As they grow, these columnar clusters overlap to form a nearly continuous redox active polymer film. ITO activation and formation of these copolymer films enhances the electroactive fraction of the electrode surface relative to a nonactivated, unmodified "blocked" ITO electrode. Outer-sphere solution redox probes (dimethylferrocene) give standard rate coefficients, kS > or = 0.4 cm.s-1, at 10 nm thick copolymer films of PEDOT/PEDOTCA, which is 3 orders of magnitude greater than that on the unmodified ITO surface and approaches the values for kS seen on clean gold surfaces.     

Structural stability and phase transitions in WO3 thin films

Tungsten oxide (WO3) thin films have been produced by KrF excimer laser (lambda = 248 nm) ablation of bulk ceramic WO3 targets. The crystal structure, surface morphology, chemical composition, and structural stability of the WO3 thin films have been studied in detail. Characterization of freshly grown WO3 thin films has been performed using X-ray diffraction (XRD), atomic force microscopy (AFM), energy-dispersive X-ray spectroscopy (EDX), Raman spectroscopy (RS), transmission electron microscopy (TEM), and selected area electron diffraction (SAED) measurements. The results indicate that the freshly grown WO3 thin films are nearly stoichiometric and well crystallized as monoclinic WO3. The surface morphology of the resulting WO3 thin film has grains of approximately 60 nm in size with a root-mean-square (rms) surface roughness of 10 nm. The phase transformations in the WO3 thin films were investigated by annealing in the TEM column at 30-500 degrees C. The phase transitions in the WO3 thin films occur in sequence as the temperature is increased: monoclinic --> orthorhombic --> hexagonal. Distortion and tilting of the WO6 octahedra occurs with the phase transitions and significantly affects the electronic properties and, hence, the electrochemical device applications of WO3.     

Surface composition and electrical and electrochemical properties of freshly deposited and acid-etched indium tin oxide electrodes

We compare the near-surface composition and electroactivity of commercial indium tin oxide (ITO) thin films, activated by plasma cleaning or etching with strong haloacids, with ITO films that have been freshly deposited in high vacuum, before and after exposure to the atmosphere or water vapor. Conductive-tip AFM, X-ray photoelectron spectroscopy (XPS), and the electrochemistry of probe molecules in solution were used to compare the relative degrees of electroactivity and the near-surface composition of these materials. Brief etching of commercial ITO samples with concentrated HCl or HI significantly enhances the electrical activity of these oxides as revealed by C-AFM. XPS was used to compare the composition of these activated surfaces, focusing on the intrinsically asymmetric O 1s line shape. Energy-loss processes associated with photoemission from the tin-doped, oxygen-deficient oxides complicate the interpretation of the O 1s spectra. O 1s spectra from the stoichiometric indium oxide lattice are accompanied by higher-binding-energy peaks associated with hydroxylated forms of the oxide (and in some cases carbonaceous impurities) and overlapping photoemission associated with energy-loss processes. Characterization of freshly sputter-deposited indium oxide (IO) and ITO films, transferred under high vacuum to the surface analysis environment, allowed us to differentiate the contributions of tin doping and oxygen-vacancy doping to the O 1s line shape, relative to higher-binding-energy O 1s components associated with hydroxyl species and carbonaceous impurities. Using these approaches, we determined that acid activation and O2 plasma etching create an ITO surface that is still covered with an average of one to two monolayers of hydroxide. Both of these activation treatments lead to significantly higher rates of electron transfer to solution probe molecules, such as dimethyferrocene in acetonitrile. Solution electron-transfer events appear to occur at no more than 4x10(7) electroactive sites per cm2 (each with diameters of ca. 50-200 nm) (i.e., a small fraction of the geometric area of the electrode). Electron-transfer rates correlate with the near-surface tin dopant concentration, suggesting that these electroactive sites arise from near-surface tin enrichment.     

液相电化学沉积法制备高氮含量CNx薄膜及性能的研究

采用液相电化学沉积法,以二氰二胺的丙酮溶液为沉积液,以镀有ITO(铟锡氧化膜)的导电玻璃为衬底制备了CNx薄膜.初步探讨了沉积温度和沉积电压对薄膜中氮含量的影响.通过XPS、FTIR光谱、SEM和US-Vis光谱对得到的CNx薄膜的化学结合状态、结构形貌和光学性质进行了表征,并用高电阻仪对薄膜的绝缘性进行了分析.XPS结果表明,CNx薄膜中碳氮主要以单键连接,sp3杂化的C—N键占85%.在IR光谱中,仅出现了C—N键和CN双键的吸收峰.SEM图谱显示CNx薄膜呈颗粒状,粒径平均为80nm左右.在水浴加热条件下沉积的CNx薄膜在200～300nm近紫外区为非线性吸收.薄膜的电阻率随氮含量的增加而增大,测量值在1012～1016Ω·cm之间.     

Electrochemical co-deposition of reduced graphene oxide-gold nanocomposite on an ITO substrate and its application in the detection of dopamine

The simultaneous deposition of rGO and gold nano structures has been achieved by electrodeposition from mixed solutions containing graphene oxide(GO)and a gold precursor.Scanning electron microscope(SEM),Raman spectroscopy and atomic force microscopy(AFM)have been employed to reveal the morphology,uniformity and practical stability of the nanocomposite films on the indium tin oxide(ITO)substrate.The AFM data showed heights of tens of nanometers of the nanocomposite,suggesting that multilayers of rGO with gold nanoparticles had been formed as a result of the electrochemical co-deposition.Differential pulse voltammetry(DPV),as a widely used analytical technique,has been carried out on the rGO-Au/ITO electrode for the quantitative detection of dopamine(DA).The detection limit(S/N=3)for the determination of DA was evaluated as 0.6μM.     

ITO基底上ZnO薄膜的制备以及刻蚀图形的扫描电化学显微镜表征

在氧化铟锡(ITO)导电玻璃的衬底上,利用直接电沉积方法制备了ZnO纳米线或ZnO薄膜.然后利用存储有HCI刻蚀剂的琼脂糖微图案印章对其进行了化学刻蚀以形成不同的图形.利用扫描电子显微镜(SEM)、X射线衍射(XRD)和扫描电化学显微镜(SECM)分别对ITO衬底上的ZnO薄膜的结构、形貌和电化学性质进行表征.     

Fabrication and characterization of gold nano particles for DNA biosensor applications

This research involves the preparation of a biosensor using silicon oxide for biomedical applications, and its effective use for the detection of target DNA hybridization. An electrochemical DNA biosensor was successfully fabricated by using(3-aminopropyl) tri-ethoxysilane(APTES) as a linker molecule combined with gold nanoparticles(GNPs) on a thermally oxidized SiO_2 thin film. The size of the GNPs was calculated by utilizing UV–vis data with an average calculated particle size within the range of 30±5 nm, and characterization by transmission electron microscopy(TEM) and atomic force microscopy(AFM). The GNP-modified SiO_2 thin films were electrically characterized through the measurement of capacitance, permittivity and conductivity using a low-cost dielectric analyzer. The capacitance, permittivity and conductivity profiles of the fabricated sensor clearly differentiated DNA immobilization and hybridization.     

Electrochemically deposited organic luminescent films: the effects of deposition parameters on morphologies and luminescent efficiency of films

The electropolymerization behaviors of an electroactive and luminescent compound TCPC as precursor are studied. The resultant electrochemical deposition (ED) films are characterized by cyclic voltammetry (CV), UV-vis, fluorescence spectra, scanning electron microscopy (SEM), and atomic force microscopy (AFM). Under the CV mode with potential range of -0.5 to 0.85 V vs Ag/Ag(+), the coupling reactions between the carbazole units of TCPC are very efficient, while the fluorescent trifluorene segment in TCPC is chemically inert in this potential range, which results in a highly fluorescent film formation on indium tin oxide (ITO) electrode. The deposition parameters for preparing the TCPC-based ED films are optimized, and the best ED film gives the fluorescence efficiency of 45.5% with surface roughness of 2.8 nm and morphologic stability as heating to 180 degrees C. The light-emitting devices (LEDs) using this ED film as light emitting layer with structure ITO/ED film (approximately 100 nm)/Ba/Al achieve maximum luminescence and external quantum efficiency of 4224 cd/m(2) at 17 V and 0.72% at 11.5 V, respectively, which are better than the device using TCPC spin-coating films as emitting layer. The technique provides a facile route toward a patternable luminescent film and device because such luminescent ED films can be manipulatively deposited on the electrified electrode.     

Influence of the substrate type on the microstructural,optical and electrical properties of sol–gel ITO films

Indium tin oxide (ITO) is recognized as the best transparent and conductive material [transparent conducting oxide (TCO)] until now and its properties are dependent on the preparation method. In the present work ITO films with In:Sn atomic ratio 9:1 were prepared by a sol–gel route on different substrates (microscope glass slides, microscope glass covered with one layer of SiO₂ and Si wafers) for TCO applications. The multilayer ITO films were obtained by successive deposition by the dip-coating method and the films were characterized from the structural, morphological, optical, and electrical points of view using X-ray diffraction, scanning electron microscopy, atomic force microscopy, spectroscopic ellipsometry and by Hall effect measurements, respectively. The results showed that the thickness, optical constants and carrier numbers depend strongly on the type of substrate, number of deposited layers and sol concentration. The optical properties of ITO films are closely related to their electrical properties. The enhancement of the conductivity was possible with the increase of crystallite size (which occurred after thermal treatment) and with the reduction of surface roughness.     

The influence of DMSO on the formation and photoelectrochemical properties of CdS thin films by electrodeposition method

The homodispersed CdS nanoparticles were prepared on Sn-doped indium oxide substrates (ITO) to form smooth and uniform CdS thin films by electrodeposition method from a dimethyl sulfoxide (DMSO) solution containing cadmium chloride and sulfur. The structure and morphologies of samples were characterized by X-ray diffraction, scanning electron microscopy, transmission electron microscopy, and atomic force microscopy. The results indicate that DMSO played an important role in formation of CdS nanofilms by affecting the nucleation and growth of the CdS nanoparticles. So, a DMSO-assisted growth process was proposed as a plausible mechanism for the formation of smooth and uniform CdS nanofilms. According to the photoelectrochemical test, the CdS thin film prepared in 30 % DMSO + 70 % H₂O system exhibited maximum photocurrent and open circuit potentials. This is because the deposited CdS nanoparticles had better dispersity on ITO, which facilitated the propagation and kinetic separation of photogenerated charges.     

The influence of annealing on electrochromic properties of Al–B–NiO thin films prepared by sol–gel

Al–B–NiO thin films were prepared using the sol–gel process and deposited on Indium tin oxide (ITO)-coated glass substrates via the dip-coating technique for the purpose of developing high performance electrochromic materials. The influence of the anneal on the structural and electrochromic properties of Al–B–NiO films is reported. Thermogravimetry (TG) and differential thermal analysis (DTA), cyclic voltammetry measurements (CV), UV spectrophotometer, atomic force microscopy (AFM) and X-ray diffraction (XRD) have been used to investigate the structural and electrochromic properties. The thickness of the films was determined by spectrophotometric analysis in 350–1,000 nm wavelength. Results showed that the Al–B–NiO thin films treated at high temperature have both the excellent electrochromic properties and good reversibility. The transmittance change (ΔT) of the film treated at 500 °C reaches still ~50% at the wavelength of 550 nm. The microstructure and the surface morphology were considered to play an important role in the electrochromic properties with different temperatures.     

(110)‐Oriented ZIF‐8 Thin Films on ITO with Controllable Thickness

(110)‐oriented zeolitic imidazolate framework (ZIF)‐8 thin films with controllable thickness are successfully deposited on indium tin oxide (ITO) electrodes at room temperature. The method applied uses 3‐aminopropyltriethoxysilane (APTES) in the form of self‐assembled monolayers (SAMs), followed by a subsequent adoption of the layer‐by‐layer (LBL) method. The crystallographic preferential orientation (CPO) index shows that the ZIF‐8 thin films are (110)‐oriented. A possible mechanism for the growth of the (110)‐oriented ZIF‐8 thin films on 3‐aminopropyltriethoxysilane modified ITO is proposed. The observed cross‐sectional scanning electron microscopy (SEM) images and photoluminescent (PL) spectra of the ZIF‐8 thin films indicate that the thickness of the ZIF‐8 layers is proportional to the number of growth cycles. The extension of such a SAM method for the fabrication of ZIF‐8 thin films as described herein should be applicable in other ZIF materials, and the as‐prepared ZIF‐8 thin films on ITO may be explored for photoelectrochemical applications.