Influence of Solution Volume on the Dissolution Rate of Silicon Dioxide in Hydrofluoric Acid

Experimental data and modeling of the dissolution of various Si/SiO₂ thermal coatings in different volumes of hydrofluoric acid (HF) are reported. The rates of SiO₂‐film dissolution, measured by means of various electrochemical techniques, and alteration in HF activity depend on the thickness of the film coating. Despite the small volumes (0.6–1.2 mL) of the HF solution, an effect of SiO₂‐coating thickness on the dissolution rate was detected. To explain alterations detected in HF activity after SiO₂ dissolution, spectroscopic analyses (NMR and FTIR) of the chemical composition of the solutions were conducted. This is associated with a modification in the chemical composition of the HF solution, which results in either the formation of an oxidized species in solution or the precipitation of dissolution products. HF₂^? accumulation in the HF solution, owing to SiO₂ dissolution was identified as the source of the chemical alteration.     

Ag活化的p型硅(111)表面化学镀Ag膜表面形貌研究

A method of electroless silver deposition on silver activated p-type silicon（111） wafer was proposed. The silver seed layer was deposited firstly on the wafer in the solution of 0.005 mol/L AgNO3 ＋0.06 mol/L HE Then the silver film was electrolessly deposited on the seed layer in the electroless bath of AgNO3＋NH3＋acetic acid＋NH2NH2 （pH 10.2）. The morphology of the seed layer and the silver films prepared under the condition of the different bath composition was compared by atomic force microscopy. The reflectance of the silver films with different thickness was characterized by Fourier transform infrared spectrometry. The experimental results indicate that the seed layer possesses excellent catalytic activity toward electroless silver deposition and rotating of the silicon wafer during the electroless silver deposition could lead to formation of the smoother silver film.     

Effect of the content of hydrogen fluoride in an etchant on the formation of nanopores in silicon during electrolytic etching

The effect of the HF content on the formation of nanopores in silicon during electrochemical etching was studied. Nanoporous silicon layers were established to be formed only when hydrogen fluoride content in etchants (initial HF content: 49 wt %) was higher than 10–12 vol %. The mass and charge balance of the electrolytic etching of silicon was calculated, and the change in charge number of reaction (effective silicon valence) was determined depending on the HF content. The obtained data were used to propose a silicon etching model with the formation of SiF₄ and nanoporous silicon (where nanopores were formed due to the action of predominantly (HF₂)^? ions).     

Ionic components dependence of the charge transfer reactions at the silicon/HF solution interface

The actual requirements for circuit miniaturization and production economy require obtaining smooth silicon surfaces using diluted chemicals, especially HF treatment. This fundamental research deals with the electrochemical corrosion of n- and p-type silicon substrates in 0.25 M dilute HF solutions, and examines the influence of fluoride ions or protons additives. All experiments were conducted both in the dark and under constant light flux, with solutions thoroughly degassed by high purity argon bubbling. Polarization resistance measurements near the open circuit potential lead to the value of the corrosion current. The kinetics of charge transfer reactions, studied by linear voltammetry, were interpreted as a function of the carrier density in the energy levels of the semiconductor and the concentration of acceptor species in the solution. The influence of these parameters on the surface roughening of the silicon samples was also studied by ex situ atomic force microscopy profile measurements. Received: 13 December 1998 / Accepted: 29 March 1999     

State of uranyl silicates MII(HSiUO6)2 ·6H2O (MII=Mn, Co, Ni, Cu, Zn) in aqueous solutions

Uranyl silicates with formula M^II(HSiUO₆)₂·6H₂O (M^II=Mn, Co, Ni, Cu, Zn) were investigated in aqueous solutions in the pH range of 0÷14. The pH interval was established where compounds preserve their composition and structure. It varies in the pH range of (3.5–4.0)÷(10.8–11.4) and depends on M^II type. Out of this pH interval investigated uranyl silicates convert to the compounds of other composition and structure, such as amorphous silica, polyuranates and hydroxides of 3d-transition elements. The solubility of M^II(HSiUO₆)₂·6H₂O was determined, it’s value changes on the several orders of magnitude from 10^?6 M in subalkali solutions to 10^?3 M in acid and strongly alkaline media. Using obtained experimental data the solubility products and solubility curves of uranyl silicates were calculated by mathematical modeling. Also the speciation diagrams of uranium (VI), silicon (IV) and M (II) in solutions and solids were plotted.     

硅在HF溶液中阳极溶解的研究

Uhlir及Turner早在50年代就已发现^[1,2],硅在HF溶液中阳极极化时,阳极电流大于某一特定值硅表面会发生电抛光反应,而低于这个值硅表面则会形成一层不同颜色的多孔硅层.1990年Canham发现多孔硅层在室温下有光致发光现象^[3],受到科学界的高度重视,在世界范围内掀起了研究多孔硅的热潮^[4].众多的研究表明,多孔硅的发光性能与其微孔的多少、大小和分布密切相关.但多孔硅要发展成为可实用的光电子材料,首先必须制备出微孔分布均匀,孔径及孔深可控的多孔硅材料.这就有必要弄清多孔硅的形成机理^[5],了解硅在HF溶液中的溶解过程及机理.为此,本文对不同掺杂浓度不同导电类型的(111)晶面单晶硅在HF溶液中的电流-电压(I-V)、电容-电压(C-V)特性进行了研究,并对这些特性进行了分析.     

Three-dimensional etching profiles and surface speciations (via attenuated total reflection-fourier transform infrared spectroscopy) of silicon nanowires in NH4F-buffered HF solutions: a double passivation model

A systematic study of the etching behavior, in terms of three-dimensional profiles, of one-dimensional (1-D) silicon nanowires (SiNWs) in NH(4)F-buffered hydrofluoric acid (BHF) solutions of varying concentrations and pH values and the surface speciations of the resulting etched SiNW surfaces, as characterized by attenuated total reflection-Fourier transform infrared (ATR-FTIR) spectroscopy, is reported. It was found that SiNWs are stable only in relatively narrow pH ranges of the BHF solutions. The results are rationalized in terms of a "double passivation" model. When SiNWs are etched in BHF solutions with pH values of 1-3, the surfaces are passivated with hydrogen (inner layer) giving rise to surface moieties such as Si-H(x) species (x = 1-3); at high HF concentrations, the H-terminated Si surfaces are covered with a hydrogen bonding network of HF and related molecules (oligomers, etc.), providing an outer-layer passivation. When SiNWs are etched in BHF solutions with pH values of 11-14 (by adding a strong base such as NaOH), the surfaces are oxygen-terminated with surface moieties such as Si-(O(-))(x)() species (x = 1-3); at high NH(4)F concentrations, the negatively charged Si surfaces are stabilized by NH(4)(+) ions via ionic bonding, again providing outer-layer passivation. In BHF solutions with pH values of 3-11, the surface speciation, consisting of Si-(OH)(x)(O(-))(y) (x + y = 1-3) species, is unstable and etched away rapidly. The surface speciations of SiNWs etched in various BHF solutions were explored via ATR-FTIR spectroscopy. It was found that, while etching SiNWs with HF-rich BHF solutions with pH < 4 gave rise to Si-H(x)() surface species, no surface Si-H(x) species were observed with SiNWs etched in BHF solutions with pH >/= 4 (HF/NH(4)F /= 4 on the other. These two factors, among others, contribute to the rapid hydrolysis of the surface Si-H(x)() species (and the etching of the SiNWs), particularly in BHF solutions with low HF/NH(4)F ratios and high pH values (pH >/= 4).     

Spectrophotometric determination of silicon in thorium oxide

A method is described for the spcctrophotometric determination of microgram quantities of silicon in the presence of thorium. Thorium oxide is dissolved by heating it at 70 to 8o°C in 4M HNO₃ that contains 2 drops of HF. Under these conditions, no silicon is lost through volatilization. The silicon is estimated as the blue ailicomolybdate complex. Under the conditions selected for development of color, a precipitate of thorium molybdate is obtained ; the thorium molybdate is, however, dissolved without affecting the color of the complex by the addition of tartrate and adjusting the pH of the solution to 3.0. The lower limit of detection is about 5 p.p.m. of silicon.     

Chemical etching of hot‐pressed p‐type polycrystalline SiC surfaces by HF/K2S2O8 solutions

In this work, an experimental study on the etching of p‐type hot‐pressed silicon carbide (SiC) was carried out in HF/K₂S₂O₈ solutions. The SiC wafers used in this work were p‐type polycrystalline materials, supplied by Goodfellow, with an acceptor concentration of 2.31 × 10¹² cm^?3. The SiC substrate was a hot‐pressed material, the latter realized from a mixture of 1 part of SiO₂ with 3 parts of C (carbon) ‘1SiO₂ + 3C’ heated in an oven at 2500 °C. In order to facilitate the chemical etching of the SiC substrate, a thin aluminium film was deposited on the SiC substrate. The morphology of the etched surface was examined with varying K₂S₂O₈ concentration. The surfaces of the etched samples were analysed using secondary ions mass spectrometry (SIMS), scanning electron microscopy (SEM), Fourier transform infrared spectroscopy (FT‐IR) and photoluminescence (PL). The surface morphology of the samples etched in HF/K₂S₂O₈ is shown to depend on the solution composition. The investigation of the effect of the HF/K₂S₂O₈ solution on SiC samples shows that as K₂S₂O₈ concentration increases, the chemical etching reveals defects with random geometry. Finally, chemical etching of p‐type SiC induces a decrease in the PL intensity, which indicates clearly the defects on the polycrystalline SiC surface. In addition, the result is very interesting, as to date no chemical etching solution at low temperature (<100 °C) has been developed for SiC. Finally, we have proposed a dissolution mechanism of SiC in 2HF/1K₂S₂O₈ solutions. Copyright © 2007 John Wiley & Sons, Ltd.     

On the acidity of hydrogen fluoride

An explanation is proposed for the rapid increase in acidity in progressing from dilute solutions of HF in H₂O to solutions of greater concentration ($\text{ca.}$ 10M). Anhydrous HF has been shown to be more acidic than generally believed and to require very small adventitious concentrations of F^? to become quite basic. Oxidation of I₂ is used to demonstrate the dependence of the nature of species in HF solution on the acidity or basicity of the medium.     

The mechanism of HF formation in LiPF6 based organic carbonate electrolytes

Spectroscopic ellipsometry was used to study the time-dependent formation of HF upon the thermal degradation of LiPF₆ at 50 °C in a lithium ion battery electrolyte containing ethylene carbonate and diethyl carbonate. The generated HF was monitored by following the etching rate of a 300 nm thick SiO₂ layer, grown on both sides of a silicon wafer substrate, as a function of the immersion time in the electrolyte at 50 °C. It was found that the formation of HF starts after 70 h of exposure time and occurs following several different phases. The amount of generated HF was calculated using an empirical formula correlating the etching rate to the temperature. Combining the results of the HF formation with literature data, a simplified mechanism for the formation of the HF involving LiPF₆ degradation, and a simplified catalytical reaction pathway of the formed HF and silicon dioxide are proposed to describe the kinetics of HF formation.     

A study of the SiO<Subscript>2</Subscript>-aqueous electrolyte (NaCl,CsCl) interface by X-ray photoelectron spectroscopy

The surface of amorphous silicon dioxide in NaCl and CsCl solutions with various values of ionic strength and pH is studied by X-ray photoelectron spectroscopy. Samples are prepared through the fast freezing of wet pastes prepared by the centrifugation of suspensions. It is shown that the X-ray photoelectron spectra of such samples provide experimental information on the composition of the SiO₂-solution interface, the number of electrolyte ions near the solid phase surface, and its chemical modification. The sign of the charge of silicon dioxide particles can be judged from the dependence of a measured Na(Cs)/Cl atomic ratio; the controlled removal of water from the samples in the chamber of an electronic spectrometer makes it possible to directly estimate the surface potential and study the energy effects of counterion hydration using the shifts in the binding energies of the corresponding photoelectron levels. An analysis of the binding energies of Cs 3d^5/2 and Cl 2p_3/2 lines in the X-ray photoelectron spectra for the SiO₂-CsCl solution interface yields additional information on the structure of the formed electrical double layer, thus making it possible to distinguish between the ions adsorbed at the surface and the counterions compensating for its charge.     

Surface morphology of silicon single crystals treated with acid polishing etchants

The specific features of formation of micro-and nanorelief on the (001) surface of silicon single crystals upon treatment with widely used etchants HF HNO₃ H₂O and with poorly studied etchants HF KMnO₄ H₂O were studied. The relief of the etched surface was examined by optical, scanning electron, and atomic-force microscopy. The polishing properties of the etchants and the silicon etching rates were studied in relation to the oxidant content. The polishing properties of the etchants were compared by analyzing statistical distribution of such characteristics of the relief of the etched surface as the height and length of micro- and nanowaves.     

Microwave assisted volatilization of silicon as fluoride for the trace impurity determination in silicon nitride by dynamic reaction cell inductively coupled plasma-mass spectrometry

A low pressure microwave assisted vapor phase dissolution procedure for silicon nitride and volatilization of in situ generated SiF₄ has been developed using H₂SO₄, HF and HNO₃ for the determination of trace impurities present in silicon nitride. Sample was taken in minimum amount (0.5 mL for 100 mg) of H₂SO₄ and treated with vapors generated from HF and HNO₃ mixture in presence of microwaves in a closed container. An 80 psi pressure with ramp and hold times of 30 min and 60 min respectively, operated twice, resulted in 99.9% volatilization of Si. Matrix free solutions were analyzed for impurities using DRC-ICP-MS. The recoveries of Cr, Mn, Fe, Ni, Co, Cu, Zn, Sr, Y, Cd, Ba and Pb were between 80 and 100% after volatilization of Si. The blanks were in lower ng g⁻¹ with method detection limits in lower ng g⁻¹ to sub ng g⁻¹ range. The method was applied for the analysis of two silicon nitride samples.     

Combined IR and XPS analysis of the native (1 0 0) surface of single‐crystalline silicon after HFaq etching

A combined analysis, based on angle‐resolved X‐ray photoelectron spectroscopy and multiple‐internal‐reflection infrared spectroscopy, of the (1 0 0) silicon surface after etching in dilute aqueous solution of HF is presented. The analysis shows that the surface is mainly formed by a heterogeneous distribution of SiH, SiH₂ and SiH₃ terminations, but contains (in addition to sub‐stoichiometric oxidized silicon) a form of reduced silicon, not consistent with the currently accepted picture of the native HF_aq‐etched surface. Copyright © 2007 John Wiley & Sons, Ltd.     

Relationship between free molecules and molecules involved in various heteroassociates in HF-Me2CO solution

The experimental and computational methods to acquire the data on the relationship between free molecules and molecules involved in various heteroassociates (HA) in the HF—organic solvent binary liquid system (BLS) were developed and applied to the series of HF solutions in acetone. The first method is appropriate at the component molar ratios from 0 : 1 to 6 : 1 under the condition that the IR spectrum of the solvent molecule contains a band, whose frequency and intensity can be measured as the molecule passes from the free state to the composition of all HA formed in the BLS. The second method is based on the consideration of the balance between free molecules and molecules involved in HA of the solvent and HF. This method requires the knowledge of molar ratios of the components of the solution at which each HA appears in the solution. It is shown that in an HF-Me₂CO solution the main part of the molecules is involved in the HA composition starting from the HF content ～0.25 molar fraction, whereas 90–100% molecules are associated at an HF content of ～0.50–0.93 molar fraction.     

Bonding in C2 and Be2: Broken symmetry and correlation in DFT solutions

Summary The solution of both Hartree-Fock (HF) and Kohn-Sham (KS) equations is based on the variational principle. Exact wavefunctions would obey the same symmetry restrictions contained in the total hamiltonian. However, the variational principle does not guarantee these symmetry restrictions and the HF and KS solutions are not necessarily symmetric in spin and space. Spatial and spin symmetry broken solutions with lower energies than their restricted analogues are examined for C₂ and Be₂, in the context of the KS formalism. Comparison with UHF solutions shows that KS instabilities are far less pronounced. The main differences between HF and KS solutions are related to effects of electron correlation.     

Preparation of Forsterite by the Geopolymer Technique—Gel Compositions as a Function of pH and Crystalline Phases

Mg-bearing silicate precursor gels have been prepared by mixing 0.74 mol/L sodium metasilicate and 1.48 mol/L magnesium nitrate solutions. Caustic soda solution of 1.0 mol/L concentration was introduced to regulate pH. The magnesium nitrate solution was added dropwise to the sodium silicate solution in equi-volume at various pH values. Raw and heat-treated gels were characterized by XRF, TG-DTA, XRD and FE-SEM. As a result, gel compositions were dependent on pH values of mixing solutions. The pH value yielding stoichiometric forsterite composition, MgO/SiO₂ = 2 was reached at pH 9.3. In addition, this value was pH 8.4 for stoichiometric enstatite composition, MgO/SiO₂ = 1. With decreasing pH from 9.3, the ratio became less than 2 and forsterite and enstatite precipitated by heating the gels. With increasing pH from 9.3, the ratio became more than 2 and forsterite and periclase precipitated by heating the gels. DTA curves showed a characteristic exothermic peak centered at 700–900^∘C, indicating relatively low temperature formation of crystalline phases due to the presence of polycondensed frame works of silicates in the precursor gels.     

Spectrophotometric determination of silicon in ultrapure, dilute hydrofluoric acid solutions

A new analytical procedure is described for the spectrophotometric determination of silicon in ultrapure, dilute hydrofluoric acid (HF) solutions. The method is a variation of the classical molybdenum blue method, but adds optimised quantities of boric acid to eliminate any HF interference in the colorimetric process. Its sensitivity and detection limit have been evaluated as, respectively, (180 ± 9) · 10^− 5/(μg/L Si) and 7.6 μg/L Si, and its reproducibility has been confirmed. The method has also been successfully applied and validated for the determination of the etch rate of single crystalline silicon surfaces in ultrapure 2% v/v HF solutions.     

The instabilities of the Hartree–Fock solutions and the lattice instabilities for conjugated hydrocarbons: The bond-order and bond-length alternations

The instabilities, especially the singlet instabilities, of the conventional Hartree–Fock (HF ) solutions for a variety of alternant and nonalternant hydrocarbons, some of which have been known to show lattice instabilities (bond-length alterations), are examined. The HF solutions for nonalternant hydrocarbons in the pentalene series larger than heptalene and [4n + 2]-annulenes larger than C₂₂H₂₂ are found to be singlet unstable and there appear new solutions lower in energy than the conventional HF solutions and characterized by charge-density waves exhibiting bond-order alterations. It is found that such symmetry-breaking solutions are energetically further stabilized by distorting the nuclear framework so that it may match up with the distribution of bond-order matrix elements of the charge-density wave, which means that in conjugated systems the singlet instability of the HF solution is always accompanied with the lattice instability. Further, it is shown that in conjugated systems, even when the HF solution is singlet stable, if it is not sufficiently stable as, for example, in pentalene and heptalene, there is every possibility for the occurrence of lattice instability. It is also shown that the singlet instability as well as the lattice instability arises from the existence of a sufficiently low-lying singlet excited state.