Ferromagnetic resonance, magnetic properties, and resistivity of (CoFeZr)x(Al2O3)1 ? x/Si multilayer nanostructures

Comparative investigations of static magnetic properties, magnetoresistance, and ferromagnetic resonance data of multilayer nanostructures consisting of CoFeZr-Al₂O₃ composite magnetic layers and amorphous silicon semiconductor spacers were performed in a layer thickness range below 5 nm. The influence of layer dimension parameters and chemical peculiarities of silicon on the inner structure and type of magnetic interactions in nanostructures with 35 and 46 at % magnetic phase composite layers is discussed.     

Band alignment and interfacial properties of atomic layer deposited (TiO2)x(Al2O3)1?x gate dielectrics on Ge

(TiO₂) _x (Al₂O₃)_1−x (x=0.7,0.8,0.9) gate dielectrics were deposited on Ge by atomic layer deposition using trimethylaluminium and Ti isopropoxide. The interfacial properties and band alignment were investigated by means of transmission electron microscopy (TEM) and X-ray photoemission spectroscopy. High-resolution TEM results show that the (TiO₂)_0.8(Al₂O₃)_0.2 film annealed at 500°C is amorphous with sharp interface between (TiO₂)_0.8(Al₂O₃)_0.2 and Ge. The conduction-band offsets are enhanced from 1.04 to 1.40 eV with increasing Al content. Capacitance equivalent thickness of 15.8 ? for (TiO₂)_0.9(Al₂O₃)_0.1 gate dielectrics is achieved with a gate leakage current of 2.70×10⁻⁵ A/cm² at V _g=+1 V.     

Profile of the refractive index distribution over the depth of (HfO2)x(Al2O3)1 ? x films

Capabilities of the method of laser null ellipsometry for the study of optical parameters of thin films of multicomponent alloys are demonstrated. Films of alloys (HfO₂) _x (Al₂O₃)_{1 − x} on single-crystal silicon are obtained by the chemical vapor deposition with the use of the following volatile compounds: hafnium dipivaloylmethanate (IV) and aluminum acetylacetonate (III). The selection of initial sets for their optical parameters is justified. The selected model is shown to correspond to experimental data. In films deposited from the mixture of precursors, the refractive index increases from a substrate to a film surface. Due to the separation of sources, films described by a single-layer model were deposited. This fact is indicative of the homogeneous distribution of components over the film thickness.     

Ferromagnetic resonance and magnetic microstructure in nanocomposite films of Cox(SiO2)1 ? x and (CoFeB)x(SiO2)1 ? x

This paper reports on the results of the investigation of the relation between the magnetic microstructure and ferromagnetic resonance (FMR) in ferromagnetic metal-insulator composites by using granular alloys (Co₄₁Fe₃₉B₂₀) _x (SiO₂)_{1 − x} and Co _x (SiO₂)_{1 − x} as an example. A comparative analysis of the properties of FMR spectra and parameters of random magnetic anisotropy leads to correlations between these quantities. It has been found that the main mechanism that determines the FMR line width in the films under investigation is the exchange narrowing mechanism.     

Magnetic and band parameters of (3HgS)1–x(Al2S3)x (x = 0.5) crystals doped with manganese

Investigations of magnetic susceptibility (χ) of (3HgS)_1–x (Al₂S₃) _x (x = 0.5) crystals doped with manganese investigated by the Faraday method in the range of Т = 77–300 K and Н = 0.25–4 kOe demonstrate that peculiar magnetic properties can be due to the presence of clusters of the Mn–S–Mn–S type in these crystals. Based on the investigation of kinetic coefficients of the crystals performed for Т = 77–300 K and Н = 0.5–5 kOe, it is established that the crystals demonstrate conductivity of the n-type, and their electric conduction only very slightly depends on the temperature and shows a maximum, the Hall coefficient is independent of the temperature, while the temperature dependences of mobility exhibit a maximum. Using the concentration dependence of the effective electron mass at the Fermi level, the width of the forbidden band, the matrix element of interatomic interaction, and the effective mass on the conduction-band bottom are obtained. Based on investigations by optical methods, the presence of direct optical interband transitions in the crystals is established and the value of the optical forbidden band (at Т = 300 K) is determined.     

Structural and electrical investigation of (Ag3AsS3)x(As2S3)1?x superionic glasses

Structural studies of (Ag₃AsS₃) _x (As₂S₃)_1−x chalcogenide superionic glasses in the compositional range x = 0.3–0.9 were performed by scanning electron microscopy. Temperature and compositional dependences of transmission coefficient, electrical conductivity, and activation energy were investigated     

Tuning X/(TiO2)x–(SiO2)100 – x (0 < x < 40) xerogel photocatalysts

Microporous (TiO₂) _x –(SiO₂)_{100 − x} (0 < x < 40) xerogels have been produced by sol–gel methods either by partial pre-hydrolysis or reflux of tetraethoxysilane and titanium isopropoxide. These have been characterised by ²⁹Si nuclear magnetic resonance, X-ray diffraction, EXAFS at the Ti–K edge, X-ray photoelectron spectroscopy, temperature-programmed reduction, FT infrared, N₂ adsorption at 78 K (BET), transmission electron microscopy and dynamic light scattering (DLS). These were dip coated onto fused silica and characterised by atomic force microscopy and UV–visible absorption. Their photoactivity in removal of alkylphenol ethoxylate TX100 from water was less than for less porous titania. The advantages of including thermally removable PEG or PPG templates in terms of increasing surface, meso-porosity and photon absorbance at visible wavelengths to give nanoengineered photocatalytic films are described.     

Electronic properties of LiMn2?xTixO4

Ti-substituted LiMn₂O₄ (LiMn_2−x Ti _x O₄, x=0, 0.15, 0.30, 0.45, 0.60, and 0.75) has been synthesized using solid-state reactions. Their crystal and electronic structures were investigated using X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), and ultraviolet photoelectron spectroscopy (UPS). XRD data suggested that the lattice parameters of LiMn_2−x Ti _x O₄ increase due to the replacement of Mn by Ti ions. XPS results indicated that the substituted Ti ions were in +4 oxidation state; consequently, the normal oxidation state of Mn ions has been detected by measuring the binding energy splitting of Mn 3s states, which decreases with the content of substituted Ti. The valence band spectra suggested that the intensity of e _g level of Mn 3d orbitals increased due to the increase of the Mn³⁺/Mn⁴⁺ ratio.     

Magnetic anisotropy and magnetoelectric properties of Tb1 ? xErxFe3(BO3)4 ferroborates

Magnetic and magnetoelectric properties of ferroborate single crystals with complex composition (Tb_{1 − x} Er _x Fe₃(BO₃)₄, x = 0, 0.75) and with competing exchange Tb-Fe and Er-Fe interactions are investigated. Jumps in electric polarization, magnetostriction, and magnetization are observed as a result of spin-flop transitions, as well as a considerable decrease in the critical field upon an increase in the Er concentration, in a field H _c parallel to the c axis. The observed behavior of phase-transition fields is analyzed and explained using a simple model taking into account anisotropy in g factors and exchange splitting of funda-mental doublets of the easy-axis Tb³⁺ ion and easy-plane Er³⁺ ion. It is established that magnetoelectric and magnetostriction anomalies under spin-flop transitions are mainly controlled by the Tb subsystem. The Tb subsystem makes a nonmonotonic contribution ΔP _a (H _a , T) to polarization along the a axis: the value of ΔP _a reverses its sign and increases with temperature due to the contribution from the excited states of the Tb³⁺ ion. Original Russian Text ? A.K. Zvezdin, A.M. Kadomtseva, Yu.F. Popov, G.P. Vorob’ev, A.P. Pyatakov, V.Yu. Ivanov, A.M. Kuz’menko, A.A. Mukhin, L.N. Bezmaternykh, I.A. Gudim, 2009, published in Zhurnal éksperimental’noĭ i Teoreticheskoĭ Fiziki, 2009, Vol. 136, No. 1, pp. 80–86.     

Optical properties of (In2Se3)1–x·(CuIn5Se8)x solid solutions

Single crystals of In₂Se₃ and CuIn₅Se₈ compounds and (In₂Se₃)_1–x·(CuIn₅Se₈)_x solid solutions have been grown from the melt using the Bridgman method and their composition and structure determined. It is shown that the crystals have n-type conductivity. Their transmission spectra were studied in the self-absorption edge region at 80 and 295 K. Based on the spectral measurements, the band gap width (E_g) was determined and the band gap concentration dependences were plotted. It is found that E_g varies with the x composition nonlinearly. Using the dielectric model of Van Vechten–Bergstresser and the Hill–Richardson pseudo potential model, E_g(x) was calculated theoretically.     

Electrical conductivity and magnetic properties of La1 ? xCaxMn1 ? yFeyO3 ceramic samples (x = 0.67, y = 0, 0.05)

The temperature dependences of the magnetic susceptibility χ(T) and the electrical resistivity ρ(T) of ceramic samples of La_{1 − x} Ca _x MnO₃ with x = 0.67 (LCMO) and La_{1 − x} Ca _x Mn_{1 − y} Fe _y O₃ with x = 0.67 and y = 0.05 (LCMFO) are investigated in magnetic fields B = 50–10⁵ G and the temperature range T = 4.2–400 K. Both samples undergo a transition from the paramagnetic state to a state with charge (orbital) ordering (CO) at temperatures T _CO ≈ 272 K for LCMO and T _CO ≈ 222 K for LCMFO. The behavior of the paramagnetic phase in the temperature range 320–400 K for LCMO and 260–400 K for LCMFO is described by the Curie-Weiss law with effective Bohr magneton numbers p _eff = 4.83 μ_B (LCMO) and 4.77 μ_B (LCMFO), respectively. The disagreement between the observed positive Weiss temperatures (θ ≈ 175 K (LCMO) and θ ≈ 134 K (LCMFO)) and negative Weiss temperatures required for the antiferromagnetic ground state can be explained by the phase separation and transition to the charge-ordered state. The magnetic irreversibility for T < T _CO is accounted for by the existence of a mixture of the ferromagnetic and antiferromagnetic phases, as well as the cluster glass phase. At low temperatures, doping with iron enhances the frustration of the system, which manifests itself in a more regular behavior of the decay rate of the remanent magnetization with time. The temperature dependence of the electrical resistivity in the range of the charge-ordered phase conforms to the variable-range hopping model. The behavior of the electrical resistivity is governed by the complex structure of the density of localized states near the Fermi level, which includes a soft Coulomb gap Δ = 0.464 eV for LCMO and 0.446 eV for LCMFO. It is established that the ratio between the localization radii of charge carriers a for LCMFO and a _und for LCMO is a/a _und = 0.88. Original Russian Text ? V.S. Zakhvalinskiĭ, R. Laiho, T.S. Orlova, A.V. Khokhulin, 2008, published in Fizika Tverdogo Tela, 2008, Vol. 50, No. 1, pp. 61–68.     

Low-field magnetization of ludwigites Co3O2BO3 and Co3 ? xFexO2BO3 (x ≈ 0.14)

Ludwigite single crystals of compositions Co₃O₂BO₃ and Co_{3 − x} Fe _x O₂BO₃ (x ≈ 0.14) have been synthesized. The crystal structure is investigated at room temperature, and the magnetization is studied in the temperature range T = 4.2–100 K in magnetic fields of up to 600 Oe. The orthorhombic symmetry is revealed, and the unit cell parameters are determined. A number of features are established for the temperature dependence of the magnetization. In unsubstituted Co₃O₂BO₃, two magnetic transitions are found at T _C1 = 43 K and T _C2 = 15 K. At temperatures below 40 K, spin-glass state is revealed. Substitution of iron ions for cobalt ions leads to a noticeable shift in the magnetic transitions toward the high-temperature range: T _C1 = 83 K and T _C2 = 74 K. A ferromagnetic ordering of the P type is found in the Co_{3 − x} Fe _x O₂BO₃ (x ≈ 0.14) compound. Original Russian Text ? N.V. Kazak, N.B. Ivanova, V.V. Rudenko, A.D. Vasil’ev, D.A. Velikanov, S.G. Ovchinnikov, 2009, published in Fizika Tverdogo Tela, 2009, Vol. 51, No. 5, pp. 916–919.     

Structure, ferroelectric and piezoelectric properties of?(Bi0.98?xLa0.02Na1?x)0.5BaxTiO3 lead-free ceramics

Lead-free (Bi_0.98−x La_0.02Na_1−x )_0.5Ba _x TiO₃ ceramics have been prepared by an ordinary sintering technique and their structure, ferroelectric and piezoelectric properties have been studied. The results of X-ray diffraction show that La²⁺ and Ba²⁺ diffuse into the Bi_0.5Na_0.5TiO₃ lattices to form a new solid solution with a pure perovskite structure, and a morphotropic phase boundary (MPB) exists at 0.04<x<0.10. Compared with pure Bi_0.5Na_0.5TiO₃ ceramics, the (Bi_0.98−x La_0.02Na_1−x )_0.5Ba _x TiO₃ ceramics possess much smaller coercive field E _c and larger remanent polarization P _r. Because of the low E _c (3.38 kV/mm), large P _r (46.2 μC/cm²) and the formation of the MPB of rhombohedral and tetragonal phases, the piezoelectric properties of the ceramics are significantly enhanced at x=0.06: d ₃₃=181 pC/N and k _p=36.3%. The depolarization temperature T _d reaches a minimum value near the MPB. The ceramics exhibit relaxor characteristic, which is probably a result from the cation disordering in the 12-fold coordination sites. The temperature dependences of the ferroelectric and dielectric properties suggest that the ceramics may contain both polar and non-polar regions at the temperatures above T _d.     

Magnetic and ferroelectric properties of exchange-frustrated multiferroics (Ni1 ? xTx)3V2O8 (T = Co, Mn, Zn)

The effect of the substitution of Co²⁺, Mn²⁺, and Zn²⁺ ions for Ni²⁺ ions on the magnetic, dielectric, and ferroelectric properties of vanadate single crystals (Ni_{1 − x} T _x )₃V₂O₈ has been analyzed. It has been found that the low-level (x ≤ 0.1) substitution of both magnetic and nonmagnetic ions stabilizes the ferroelectric state with a cycloidal magnetic structure. The existence region of this state is expanded to low temperatures down to 3 K for Zn²⁺ and below 1.8 K for Co²⁺ and Mn²⁺ owing to the suppression of a low-temperature weak ferromagnetic phase. At the same time, the ferroelectric phase disappears completely at large concentrations of Co and Mn. The effect of magnetic fields on the magnetic and ferroelectric states has been analyzed. It has been shown that the magnetic field along the c axis suppresses the ferroelectric state, whereas the magnetization along the antiferromagnetism axis (a axis) induces the reentrant phase transition from a paraelectric weak ferromagnetic structure to a ferroelectric structure. The corresponding H-T phase diagrams have been drawn.     

Combined analysis of static and dynamic magnetic characteristics of multilayer CoFeZr/α-Si nanostructures

The combined method of static and dynamic magnetic measurements is used to study nano-dimensional multilayer amorphous CoFeZr/α -Si films. It is established that at the thickness of magnetic layers x = 5–12 nm their magnetization does not differ from that of the bulk material. It is shown that as x is lowered to 2–3 nm, the magnetization of magnetic layers decreases, which may be due to the formation of mixed layers containing nonmagnetic silicides. At a thickness of nonmagnetic interlayers of less than 1 nm the features characteristic of a weak antiferromagnetic interaction of neighboring layers are observed.     

Thermal expansion of (Ba1 ? xLax)Ti1 ? x/4O3 solid solutions

Deformation and the thermal expansion coefficient of ceramic samples of (Ba_{1 − x} La _x )Ti_{1 − x/4}O₃ solid solutions (x = 0, 0.026, 0.036, 0.054) were studied in the temperature range 120–700 K. Based on an analysis of the data obtained, the temperature-composition phase diagram is refined, and the temperature dependence of the polarization is calculated. The results are discussed in combination with the dielectric measurement data. Original Russian Text ? M.V. Gorev, I.N. Flerov, Ph. Sciau, S. Guillemet-Fritsch, 2009, published in Fizika Tverdogo Tela, 2009, Vol. 51, No. 4, pp. 746–752.     

Electrical and magnetic properties of manganites La1 ? xAgxMnO3 (x = 0.05, 0.1, and 0.2) at 77 K < T < 300 K

The electrical conductivity, magnetization, and magnetoresistance of manganites La_{1 − x} Ag _x MnO₃ have been investigated in the temperature range 78–300 K. The samples have been synthesized by the sol-gel method. At room temperature, the magnetic field of 0.6 T has no effect on the electrical conductivity. As the temperature decreases, an abrupt jump is observed in the magnetization curve due to the semiconductor-metal phase transition. This transition hardly affects the temperature dependence of the resistance.     

Structure and magnetism of semiconductor crystals of the (Ga1 ? xMnx)2Se3 (x = 0?0.04) compounds

Neutron diffraction and magnetic measurements have been used to study the effect of doping with Mn³⁺ ions on the fine crystal structure of the Ga₂Se₃ monoclinic compound. It has been established that the structural state of the crystals is changed even at a relatively low doping level (x = 0.04). Arguments in favor of the fact that local Jahn-Teller distortions are responsible for the formation of the fine structure and magnetism in compounds of this class are presented.