On the possibility of the dynamic self-polarization of nuclear spins in a quantum dot

The possibility of self-polarization of nuclear spins predicted by M.I. D’yakonov and V.I. Perel’ (JETP Lett. 16, 398 (1972)) has been investigated in the case of the electric current passing through a single quantum dot. The mechanisms of nuclear spin relaxation in the quantum dot leading to the polarization and depolarization of the nuclei are discussed. To make the nuclear polarization possible, it has been proposed to increase the nuclear polarization rate via the interaction of an electron localized in the quantum dot with electromagnetic oscillations in an electric circuit, whose proper frequency is tuned to a resonance with the Zeeman splitting of an electron level in the quantum dot.     

Observation of the Kondo effect in a spin-3/2 hole quantum dot

We report the observation of Kondo physics in a spin-3/2 hole quantum dot. The dot is formed close to pinch-off in a hole quantum wire defined in an undoped AlGaAs/GaAs heterostructure. We clearly observe two distinctive hallmarks of quantum dot Kondo physics. First, the Zeeman spin splitting of the zero-bias peak in the differential conductance is independent of the gate voltage. Second, this splitting is twice as large as the splitting for the lowest one-dimensional subband. We show that the Zeeman splitting of the zero-bias peak is highly anisotropic and attribute this to the strong spin-orbit interaction for holes in GaAs.     

Zeeman effect and magnetic anomalies in narrow-gap semiconductor quantum dots

We present a systematic theoretical study, based on the Kane–Weiler 8×8 k·p model, of the linear Zeeman splitting introduced by the interaction between the angular momentum and the magnetic field which can give a measure of the non-linear Zeeman effect associated with interband coupling and diamagnetic contributions. The conduction and valence bands g-factors are calculated for InSb spherical and semi-spherical quantum dots. The calculations of the g-factors showed an almost linear dependence, for the ground state, on the magnetic field. We have also found that the strong magnetic field dependence as well as the dependence on the dot size of the effective spin splitting can be unambiguously attributed to the strength of the inter-level mixing.     

Spin-polarized current generated by magneto-electrical gating

We theoretically study spin-polarized current through a single electron tunneling transistor (SETT), in which a quantum dot (QD) is coupled to non-magnetic source and drain electrodes via tunnel junctions, and gated by a ferromagnetic (FM) electrode. The I–V characteristics of the device are investigated for both spin and charge currents, based on the non-equilibrium Green's function formalism. The FM electrode generates a magnetic field, which causes a Zeeman spin-splitting of the energy levels in the QD. By tuning the size of the Zeeman splitting and the source–drain bias, a fully spin-polarized current is generated. Additionally, by modulating the electrical gate bias, one can effect a complete switch of the polarization of the tunneling current from spin-up to spin-down current, or vice versa.     

Spin-polarized current in double quantum dots

We analyze the transport through asymmetric double quantum dots with an inhomogeneous Zeeman splitting in the presence of crossed dc and ac magnetic fields.A strong spin-polarized current can be obtained by changing the dc magnetic field.It is mainly due to the resonant tunnelling.But for the ferromagnetic right electrode,the electron spin resonance also plays an important role in transport.We show that the double quantum dots with three-level mixing under crossed dc and ac magnetic fields can act not only as a bipolar spin filter but also as a spin inverter under suitable conditions.     

Zeeman splitting in ballistic hole quantum wires

We have studied the Zeeman splitting in ballistic hole quantum wires formed in a (311)A quantum well by surface gate confinement. Transport measurements clearly show lifting of the spin degeneracy and crossings of the subbands when an in-plane magnetic field B is applied parallel to the wire. When B is oriented perpendicular to the wire, no spin splitting is discernible up to B = 8.8 T. The observed large Zeeman splitting anisotropy in our hole quantum wires demonstrates the importance of quantum confinement for spin splitting in nanostructures with strong spin-orbit coupling.     

Adiabatic quantum pump of spin-polarized current

We propose a mechanism by which an open quantum dot driven by two ac (radio frequency) gate voltages in the presence of a moderate in-plane magnetic field generates a spin-polarized, phase-coherent dc current. The idea combines adiabatic, nonquantized (but coherent) pumping through periodically modulated external parameters and the strong fluctuations of the electron wave function existent in chaotic cavities. We estimate that the spin polarization of the current can be observed for temperatures and Zeeman splitting energies of the order of the single-particle mean level spacing.     

Thermoelectric transport in the three terminal quantum dot

The thermoelectric transport in the system composed of a quantum dot in contact with superconducting, ferromagnetic and normal metal electrodes has been studied. Such a system can support pure spin current in the normal electrode. In the limit of a large superconducting gap and weak coupling between the dot and the electrodes we investigate the sub-gap charge and spin transport via Andreev mechanism using the standard master equation technique, which is known to be valid in the sequential tunnelling regime. The Zeeman splitting of the dot level induces pure spin current in the ferromagnetic electrode under an appropriate bias. This opens a novel possibility to switch the spin current between two electrodes by electric means. The calculated spin and charge thermopower coefficients attain very large values, of the order of a few hundreds μV K(-1), and show similar dependences on the position of the on-dot energy level and temperature.     

g-factor tuning and manipulation of spins by an electric current

We investigate the Zeeman splitting of the two-dimensional electron gas in an asymmetric silicon quantum well, performing electron-spin-resonance (ESR) experiments. Applying a small dc current we observe a shift in the resonance field due to the additional current-induced Bychkov-Rashba type of spin-orbit field. We also show that a high frequency current may induce electric dipole spin resonance very efficiently. We identify different contributions to this type of ESR signal.     

Entanglement and Zeeman interaction in diluted magnetic semiconductor quantum dot

We present theoretically the Zeeman coupling and exchange-induced swap action in spin-based quantum dot quantum computer models in the presence of magnetic field. We study the valence and conduction band states in a double quantum dots made in diluted magnetic semiconductor. The latter have been proven to be very useful in building an all-semiconductor platform for spintronics. Due to a strong p–d exchange interaction in diluted magnetic semiconductor (Cd_0.57Mn_0.43Te), the relative contribution of this component is strongly affected by an external magnetic field, a feature that is absent in nonmagnetic double quantum dots. We determine the energy spectrum as a function of magnetic field within the Hund–Mulliken molecular-orbit approach and by including the Coulomb interaction. Since we show that the ground state of the two carriers confined in a vertically coupled quantum dots provide a possible realization for a gate of a quantum computer, the crossing between the lowest states, caused by the giant spin splitting, can be observed as a pronounced jump in the magnetization of small magnetic field amplitude. Finally, we determine the swap time as a function of magnetic field and the inter dot distance. We estimate quantitatively swap errors caused by the field, establishing that error correction would, in principle, be possible in the presence of nonuniform magnetic field in realistic structures.     

Ballistic transport in InSb mesoscopic structures

Two different device geometries are fabricated to investigate ballistic transport of electrons in low-dimensional InSb structures. Negative bend resistance is observed in four-terminal devices of channel widths ranging from 0.2 to 0.65 μm. We also report the observation of conductance quantization in quantum point contacts fabricated using in-plane gates. The one-dimensional subbands depopulate with increasing transverse magnetic field up to 3 T. Zeeman splitting is resolved at magnetic fields above 0.9 T.     

Valley-based noise-resistant quantum computation using Si quantum dots

We devise a platform for noise-resistant quantum computing using the valley degree of freedom of Si quantum dots. The qubit is encoded in two polarized (1,1) spin-triplet states with different valley compositions in a double quantum dot, with a Zeeman field enabling unambiguous initialization. A top gate gives a difference in the valley splitting between the dots, allowing controllable interdot tunneling between opposite valley eigenstates, which enables one-qubit rotations. Two-qubit operations rely on a stripline resonator, and readout on charge sensing. Sensitivity to charge and spin fluctuations is determined by intervalley processes and is greatly reduced as compared to conventional spin and charge qubits. We describe a valley echo for further noise suppression.     

Few-electron quantum dot fabricated with layered scanning force microscope lithography

Few-electron quantum dots with integrated charge read-out have been fabricated by layered local anodic oxidation of a Ga[Al]As heterostructure and a thin Titanium top gate. The additional set of gates provided by the metallic film is used to tune the quantum dots into the few-electron regime. Current through the quantum dots and the quantum dot charge have been simultaneously measured for electron numbers varying between zero and two. The singlet–triplet splitting varies in two different samples between 0.5 and 1.5 meV. The Zeeman splitting of the first conductance resonance is observed in parallel magnetic field. The high tunability and straightforward implementation of these structures are promising for future nanostructure design.     

Thermospin diode effect based on a quantum dot system

The rectification of spin current driven by a temperature difference in a simple model consisting of a quantum dot connected to two ferromagnetic leads has been studied using the rate equation technique. In addition to the dot level, the magnitude of thermospin current rectification depends on the temperature bias across the system, the asymmetry parameter and the Coulomb charging energy, where the last two parameters are necessary conditions for rectification to occur in the system. The thermospin current rectification becomes analytically simplified at the limitation condition of asymmetry. With an applied Zeeman magnetic field, an ideal 100%$100\text{\%}$ rectification of thermospin current can be obtained at specific dot energies, which can be controlled by an external gate voltage.     

Influence of intradot Coulomb correlations on the Andreev reflection in a ferromagnetic metal/quantum dot/superconductor hybrid junction

Spin-dependent tunneling through a quantum dot coupled to one ferromagnetic and onesuperconducting electrodes is studied in the Andreev reflection (AR) regime. Electricalconductance is calculated within the nonequilibrium Green function technique. Features ofthe AR current involved by the intradot Coulomb correlations (or the dot’s chargingenergy U) and in the presence of the Zeeman splitting of the dotdiscrete level are analyzed in both linear and nonlinear transport regimes. A newinterference effect due to AR is predicted to appear in the case of a weak on-dotrepulsion. Strong Coulomb correlations studied in nonequilibrium situation revealedsignificant modifications of the AR differential conductance occurring only in case ofspin-polarized transmission. Origin of a variety of the multipeak structure of theconductance for the system with the interacting quantum dot, as well as the conditions forthe perfect U-dependent AR transmission are also discussed.     

Nonequilibrium Keldysh formalism for interacting leads—Application to quantum dot transport driven by spin bias

The conductance through a mesoscopic system of interacting electrons coupled to two adjacent leads is conventionally derived via the Keldysh nonequilibrium Green’s function technique, in the limit of noninteracting leads [Y. Meir, N.S. Wingreen, Phys. Rev. Lett. 68 (1992) 2512]. We extend the standard formalism to cater for a quantum dot system with Coulombic interactions between the quantum dot and the leads. The general current expression is obtained by considering the equation of motion of the time-ordered Green’s function of the system. The nonequilibrium effects of the interacting leads are then incorporated by determining the contour-ordered Green’s function over the Keldysh loop and applying Langreth’s theorem. The dot–lead interactions significantly increase the height of the Kondo peaks in density of states of the quantum dot. This translates into two Kondo peaks in the spin differential conductance when the magnitude of the spin bias equals that of the Zeeman splitting. There also exists a plateau in the charge differential conductance due to the combined effect of spin bias and the Zeeman splitting. The low-bias conductance plateau with sharp edges is also a characteristic of the Kondo effect. The conductance plateau disappears for the case of asymmetric dot–lead interaction.     

Nonequilibrium Zeeman splitting in quantum transport through nanoscale junctions

We calculate the differential conductance G(V) through a quantum dot in an applied magnetic field. We use a Keldysh conserving approximation for weakly correlated and the scattering-states numerical renormalization group for the intermediate and strongly correlated regime out of equilibrium. In the weakly correlated regime, the Zeeman splitting observable in G(V) strongly depends on the asymmetry of the device. In contrast, in the strongly correlated regime the position Δ(K) of the Zeeman-split zero-bias anomaly is almost independent of such asymmetries and of the order of the Zeeman energy Δ(0). We find a crossover from the purely spin-fluctuation driven Kondo regime at small magnetic fields with Δ(K)<Δ(0) to a regime at large fields where the contribution of charge fluctuations induces larger splittings with Δ(K)>Δ(0) as it was observed in recent experiments.     

Multi-exciton spectroscopy on a self-assembled InGaAs/GaAs quantum dot

We report about spatially resolved magneto-optical experiments on a self-assembled InGaAs quantum dot. Using electron beam lithograpy for patterning a metal shadow mask we can isolate a single dot. This allows us to study the optical response of a single dot as a function of excitation power and magnetic field. We investigate the influence of many body interaction in the emission spectra for different exciton occupation numbers of the dot. The diamagnetic/orbital shift as well as Zeeman splitting in a magnetic field can be fully resolved and are used to identify the observed emission lines. Further we report on absorption properties of the quantum dot as a function of magnetic field. We analyse in detail the phonon-assisted absorption process connected with the GaAs LO-phonon 36 meV above the single-exciton ground state.     

Magneto-optical single dot spectroscopy of GaSb/GaAs type II quantum dots

We have investigated magneto-optical properties of GaSb/GaAs self-assemble type II quantum dots by single dot spectroscopy in magnetic field. We have observed clear Zeeman splitting and diamagnetic shift of GaSb/GaAs quantum dots. The diamagnetic coefficient ranges from 5 to 30 μeV/T². The large coefficient and their large distribution are attributed to the size inhomogeneity and electron localization outside the dot. The g-factor of GaSb/GaAs quantum dots is slightly larger than that of similar type I InGaAs/GaAs quantum dots. In addition, we find almost linear relationship between the diamagnetic coefficient and the g-factor. The linear increase of g-factor with diamagnetic coefficient is due to an increase of spin-orbit interaction with dot size.     

Positive magnetoresistance peaked at a ferromagnetic transition in Mn-doped GaAs/AlGaAs quantum wells

A large positive magnetoresistance peaked at the Curie temperature has been observed in quantum well structures GaAs/AlGaAs doped by Mn. We suggest a new mechanism of magnetoresistance within low T _c ferromagnets resulting from a pronounced dependence of spin polarization at the vicinity of T _c on the external magnetic field. As a result, any contribution to resistance dependent on the Zeeman splitting of the spin subbands is amplified with respect to the direct effect of the external field. In our case we believe that the corresponding contribution is related to the upper Hubbard band. We propose that the mechanism considered here can be exploited as the mark of ferromagnetic transition.