Small‐Band‐Gap Halide Double Perovskites

Despite their compositional versatility, most halide double perovskites feature large band gaps. Herein, we describe a strategy for achieving small band gaps in this family of materials. The new double perovskites Cs₂AgTlX₆ (X=Cl ( 1 ) and Br ( 2 )) have direct band gaps of 2.0 and 0.95 eV, respectively, which are approximately 1 eV lower than those of analogous perovskites. To our knowledge, compound 2 displays the lowest band gap for any known halide perovskite. Unlike in A^IB^IIX₃ perovskites, the band‐gap transition in A^I₂BB′X₆ double perovskites can show substantial metal‐to‐metal charge‐transfer character. This band‐edge orbital composition is used to achieve small band gaps through the selection of energetically aligned B‐ and B′‐site metal frontier orbitals. Calculations reveal a shallow, symmetry‐forbidden region at the band edges for 1 , which results in long (μs) microwave conductivity lifetimes. We further describe a facile self‐doping reaction in 2 through Br₂ loss at ambient conditions.     

Pressure‐Induced Emission Enhancement,Band‐Gap Narrowing,and Metallization of Halide Perovskite Cs3Bi2I9

Low‐toxicity, air‐stable bismuth‐based perovskite materials are attractive substitutes for lead halide perovskites in photovoltaic and optoelectronic devices. The structural, optical, and electrical property changes of zero‐dimensional perovskite Cs₃Bi₂I₉ resulting from lattice compression is presented. An emission enhancement under mild pressure is attributed to the increase in exciton binding energy. Unprecedented band gap narrowing originated from Bi?I bond contraction, and the decrease in bridging Bi‐I‐Bi angle enhances metal halide orbital overlap, thereby breaking through the Shockley–Queisser limit under relatively low pressure. Pressure‐induced structural evolutions correlate well with changes in optical properties, and the changes are reversible upon decompression. Considerable resistance reduction implies a semiconductor‐to‐conductor transition at ca. 28 GPa, and the final confirmed metallic character by electrical experiments indicates a wholly new electronic property.     

Pressure‐Suppressed Carrier Trapping Leads to Enhanced Emission in Two‐Dimensional Perovskite (HA)2(GA)Pb2I7

A remarkable PL enhancement by 12 fold is achieved using pressure to modulate the structure of a recently developed 2D perovskite (HA)₂(GA)Pb₂I₇ (HA=n‐hexylammonium, GA=guanidinium). This structure features a previously unattainable, extremely large cage. In situ structural, spectroscopic, and theoretical analyses reveal that lattice compression under a mild pressure within 1.6 GPa considerably suppresses the carrier trapping, leading to significantly enhanced emission. Further pressurization induces a non‐luminescent amorphous yellow phase, which is retained and exhibits a continuously increasing band gap during decompression. When the pressure is released to 1.5 GPa, emission can be triggered by above‐band gap laser irradiation, accompanied by a color change from yellow to orange. The obtained orange phase could be retained at ambient conditions and exhibits two‐fold higher PL emission compared with the pristine (HA)₂(GA)Pb₂I₇.     

Aqueous Synthesis of Methylammonium Lead Halide Perovskite Nanocrystals

Methylammonium lead halide perovskite nanocrystals offer attractive optoelectronic properties but suffer from fast degradation in the presence of water. In contradiction to this observation, we demonstrate the possibility of a direct aqueous synthesis of CH₃NH₃PbX₃ (X=Br or Cl/Br) nanocrystals through the reaction between the lead halide complex and methylamine when the pH is maintained in the range of 0–5. Under these synthetic conditions, the positively charged surface of the perovskite nanocrystals and the proper ionic balance help to prevent their decomposition in water. Additional surface capping with organic amine ligands further improves the photoluminescence quantum yield of the perovskite nanocrystals to values close to 40 %, ensures their stability under ambient conditions for several months, and their photoluminescence performance under continuous 0.1 W mm^?2 405 nm light irradiation for over 250 hours.     

Band‐Edge Luminescence from Oxide and Halide Perovskite Semiconductors

Because perovskite crystals exhibit unique magnetic, conductive, and optical properties, they have been the subject of many fundamental investigations in various research fields. However, investigations related to their use as optoelectronic device materials are still in their early days. Regarding oxide perovskites, which have been investigated for a long time, the efficiency of photoluminescence (PL) induced by band‐to‐band transitions is extremely low because of the localized nature of the carriers in these materials. On the other hand, halide perovskites exhibit a highly efficient band‐edge PL attributable to the recombination of delocalized photocarriers. Therefore, it is expected that this class of high‐quality materials will be advantageous for optoelectronic devices such as solar cells and light‐emitting diodes. In this Minireview, we discuss various aspects of the PL properties and carrier dynamics of SrTiO₃ and CH₃NH₃PbX₃ (X=I, Br), which are representative oxide and halide perovskites.     

Pressure-Suppressed Carrier Trapping Leads to Enhanced Emission in Two-Dimensional Perovskite (HA)2(GA)Pb2I7

A remarkable PL enhancement by 12 fold is achieved using pressure to modulate the structure of a recently developed 2D perovskite (HA)₂(GA)Pb₂I₇ (HA=n-hexylammonium, GA=guanidinium). This structure features a previously unattainable, extremely large cage. In situ structural, spectroscopic, and theoretical analyses reveal that lattice compression under a mild pressure within 1.6 GPa considerably suppresses the carrier trapping, leading to significantly enhanced emission. Further pressurization induces a non-luminescent amorphous yellow phase, which is retained and exhibits a continuously increasing band gap during decompression. When the pressure is released to 1.5 GPa, emission can be triggered by above-band gap laser irradiation, accompanied by a color change from yellow to orange. The obtained orange phase could be retained at ambient conditions and exhibits two-fold higher PL emission compared with the pristine (HA)₂(GA)Pb₂I₇.     

A Lead Iodide Perovskite Based on a Large Organic Cation for Solar Cell Applications

Methylammonium (CH₃NH₃⁺) and formamidinium ((NH₂)₂CH⁺) based lead iodide perovskites are currently the two commonly used organic–inorganic lead iodide perovskites. There are still no alternative organic cations that can produce perovskites with band gaps spanning the visible spectrum (that is, <1.7 eV) for solar cell applications. Now, a new perovskite using large propane‐1,3‐diammonium cation (1,3‐Pr(NH₃)₂²⁺) with a chemical structure of (1,3‐Pr(NH₃)₂)_0.5PbI₃ is demonstrated. X‐ray diffraction (XRD) shows that the new perovskite exhibits a three‐dimensional tetragonal phase. The band gap of the new perovskite is about 1.6 eV, which is desirable for photovoltaic applications. A (1,3‐Pr(NH₃)₂)_0.5PbI₃ perovskite solar cell (PSC) yields a power conversion efficiency (PCE) of 5.1 %. More importantly, this perovskite is composed of a large hydrophobic cation that provides better moisture resistance compared to CH₃NH₃PbI₃ perovskite.     

First-Principles Study of Aziridinium Lead Iodide Perovskite for Photovoltaics

The long-term stability remains one of the main challenges for the commercialization of the rapidly developing hybrid organic-inorganic perovskite solar cells. Herein, we investigate the electronic and optical properties of the recently reported hybrid halide perovskite (CH₂)₂NH₂PbI₃ (AZPbI₃), which exhibits a much better stability than the popular halide perovskites CH₃NH₃PbI₃ and HC(NH₂)₂PbI₃, by using density functional theory (DFT). We find that AZPbI₃ possesses a band gap of 1.31 eV, ideal for single-junction solar cells, and its optical absorption is comparable with those of the popular CH₃NH₃PbI₃ and HC(NH₂)₂PbI₃ materials in the whole visible-light region. In addition, the conductivity of AZPbI₃ can be tuned from efficient p-type to n-type, depending on the growth conditions. Besides, the charge-carrier mobilities and lifetimes are unlikely hampered by deep transition energy levels, which have higher formation energies in AZPbI₃ according to our calculations. Overall, we suggest that the perovskite AZPbI₃ is an excellent candidate as a stable high-performance photovoltaic absorber material.     

Reentrant Structural and Optical Properties and Large Positive Thermal Expansion in Perovskite Formamidinium Lead Iodide

The structure of the hybrid perovskite HC(NH₂)₂PbI₃ (formamidinium lead iodide) reflects competing interactions associated with molecular motion, hydrogen bonding tendencies, thermally activated soft octahedral rotations, and the propensity for the Pb²⁺ lone pair to express its stereochemistry. High‐resolution synchrotron X‐ray powder diffraction reveals a continuous transition from the cubic α‐phase (Pm m, #221) to a tetragonal β‐phase (P4/mbm, #127) at around 285 K, followed by a first‐order transition to a tetragonal γ‐phase (retaining P4/mbm, #127) at 140 K. An unusual reentrant pseudosymmetry in the β‐to‐γ phase transition is seen that is also reflected in the photoluminescence. Around room temperature, the coefficient of volumetric thermal expansion is among the largest for any extended crystalline solid.     

Exploring a Lead‐free Semiconducting Hybrid Ferroelectric with a Zero‐Dimensional Perovskite‐like Structure

Perovskite lead halides (CH₃NH₃PbI₃) have recently taken a promising position in photovoltaics and optoelectronics because of remarkable semiconducting properties and possible ferroelectricity. However, the potential toxicity of lead arouses great environmental concern for widespread application. A new chemically tailored lead‐free semiconducting hybrid ferroelectric is reported, N‐methylpyrrolidinium)₃Sb₂Br₉ ( 1 ), which consists of a zero‐dimensional (0‐D) perovskite‐like anionic framework connected by corner‐ sharing SbBr₆ coordinated octahedra. It presents a large ferroelectric spontaneous polarization of approximately 7.6 μC cm^?2, as well as notable semiconducting properties, including positive temperature‐dependent conductivity and ultraviolet‐sensitive photoconductivity. Theoretical analysis of electronic structure and energy gap discloses a dominant contribution of the 0‐D perovskite‐like structure to the semiconducting properties of the material. This finding throws light on the rational design of new perovskite‐like hybrids, especially lead‐free semiconducting ferroelectrics.     

Dipole‐Induced Band‐Gap Reduction in an Inorganic Cage

Metal‐doped polyoxotitanium cages are a developing class of inorganic compounds which can be regarded as nano‐ and sub‐nano sized molecular relatives of metal‐doped titania nanoparticles. These species can serve as models for the ways in which dopant metal ions can be incorporated into metal‐doped titania (TiO₂), a technologically important class of photocatalytic materials with broad applications in devices and pollution control. In this study a series of cobalt(II)‐containing cages in the size range ca. 0.7–1.3 nm have been synthesized and structurally characterized, allowing a coherent study of the factors affecting the band gaps in well‐defined metal‐doped model systems. Band structure calculations are consistent with experimental UV/Vis measurements of the Ti_xO_y absorption edges in these species and reveal that molecular dipole moment can have a profound effect on the band gap. The observation of a dipole‐induced band‐gap decrease mechanism provides a potentially general design strategy for the formation of low band‐gap inorganic cages.     

High Compression‐Induced Conductivity in a Layered Cu–Br Perovskite

We show that the onset pressure for appreciable conductivity in layered copper‐halide perovskites can decrease by ca. 50 GPa upon replacement of Cl with Br. Layered Cu–Cl perovskites require pressures >50 GPa to show a conductivity of 10^?4 S cm^?1, whereas here a Cu–Br congener, (EA)₂CuBr₄ (EA=ethylammonium), exhibits conductivity as high as 2×10^?3 S cm^?1 at only 2.6 GPa, and 0.17 S cm^?1 at 59 GPa. Substitution of higher‐energy Br 4p for Cl 3p orbitals lowers the charge‐transfer band gap of the perovskite by 0.9 eV. This 1.7 eV band gap decreases to 0.3 eV at 65 GPa. High‐pressure X‐ray diffraction, optical absorption, and transport measurements, and density functional theory calculations allow us to track compression‐induced structural and electronic changes. The notable enhancement of the Br perovskite's electronic response to pressure may be attributed to more diffuse Br valence orbitals relative to Cl orbitals. This work brings the compression‐induced conductivity of Cu‐halide perovskites to more technologically accessible pressures.     

Pressure‐Tuneable Visible‐Range Band Gap in the Ionic Spinel Tin Nitride

The application of pressure allows systematic tuning of the charge density of a material cleanly, that is, without changes to the chemical composition via dopants, and exploratory high‐pressure experiments can inform the design of bulk syntheses of materials that benefit from their properties under compression. The electronic and structural response of semiconducting tin nitride Sn₃N₄ under compression is now reported. A continuous opening of the optical band gap was observed from 1.3 eV to 3.0 eV over a range of 100 GPa, a 540 nm blue‐shift spanning the entire visible spectrum. The pressure‐mediated band gap opening is general to this material across numerous high‐density polymorphs, implicating the predominant ionic bonding in the material as the cause. The rate of decompression to ambient conditions permits access to recoverable metastable states with varying band gaps energies, opening the possibility of pressure‐tuneable electronic properties for future applications.     

Temperature‐Induced Irreversible Phase Transition From Perovskite to Diamond But Pressure‐Driven Back‐Transition in an Ammonium Copper Formate

The compound [CH₃CH₂NH₃][Cu(HCOO)₃] undergoes a phase transition at 357 K, from a perovskite to a diamond structure, by heating. The backward transition can be driven by pressure at room temperature but not cooling under ambient or lower pressure. The rearrangement of one long copper–formate bond, the switch of bridging‐chelating mode of the formate, the alternation of N?H???O H‐bonds, and the flipping of ethylammonium are involved in the transition. The strong N?H???O H‐bonding probably locks the metastable diamond phase. The two phases display magnetic and electric orderings of different characters.     

Size‐ and Halide‐Dependent Auger Recombination in Lead Halide Perovskite Nanocrystals

Lead halide perovskite nanocrystals (NCs) hold strong promise for a variety of light‐harvesting, emitting, and detecting applications, all of which, however, could be complicated by multicarrier Auger recombination. Therefore, complete documentation of the size‐ and composition‐dependent Auger recombination rates of these NCs is highly desirable, as it can guide system design in many applications. Herein we report the synthesis and Auger measurements of monodisperse APbX₃ (A=Cs and FA; X=Cl, Br, and I) NCs in an extensive size range (ca. 3–9 nm). The biexciton Auger lifetime of all the NCs scales linearly with the NC volume. The scaling coefficient is virtually independent of the cation but rather depends sensitively on the anion, and is 0.035, 0.085, and 0.142 ps nm^?3 for Cl, Br, and I, respectively. In all of these nanocrystals the Auger recombination is much faster than in standard CdSe and PbSe NCs (ca. 1 ps nm^?3).     

Giant Volume Change and Topological Gaps in Temperature‐ and Pressure‐Induced Phase Transitions: Experimental and Computational Study of ThMo2O8

By applying high temperature (1270 K) and high pressure (3.5 GPa), significant changes occur in the structural volume and crystal topology of ThMo₂O₈, allowing the formation of an unexpected new ThMo₂O₈ polymorph (high‐temperature/high‐pressure (HT/HP) orthorhombic ThMo₂O₈). Compared with the other three ThMo₂O₈ polymorphs prepared at the ambient pressure (monoclinic, orthorhombic, and hexagonal phases), the molar volume for the quenched HT/HP–orthorhombic ThMo₂O₈ is decreased by almost 20 %. As a result of such a dramatic structural transformation, a permanent high‐pressure quenchable state is able to be sustained when the pressure is released. The crystal structures of the three ambient ThMo₂O₈ phases are based on three‐dimensional (3D) frameworks constructed from corner‐sharing ThO_x (x=6, 8, or 9) polyhedra and MoO₄ tetrahedra. The HT/HP–orthorhombic ThMo₂O₈, however, crystallizes in a novel structural topology, exhibiting very dense arrangements of ThO₁₁ and MoO₄₊₁ polyhedra connecting along the crystallographic c axis. The phase transitions among all four of these ThMo₂O₈ polymorphs are unveiled and fully characterized with regard to the structural transformation, thermal stability, and vibrational properties. The complementary first principles calculations of Gibbs free energies reveal the underlying energetics of the phase transition, which support the experimental findings.     

Pressure‐Induced Intersite BiM (M=Ru, Ir) Valence Transitions in Hexagonal Perovskites

Pressure‐induced charge transfer from Bi to Ir/Ru is observed in the hexagonal perovskites Ba_3+nBiM_2+nO_9+3n (n=0,1; M=Ir,Ru). These compounds show first‐order, circa 1 % volume contractions at room temperature above 5 GPa, which are due to the large reduction in the effective ionic radius of Bi when the 6s shell is emptied on oxidation, compared to the relatively negligible effect of reduction on the radii of Ir or Ru. They are the first such transitions involving 4d and 5d compounds, and they double the total number of cases known. Ab initio calculations suggest that magnetic interactions through very short (ca. 2.6 Å) M? M bonds contribute to the finely balanced nature of their electronic states.     

Pressure‐Induced Emission Enhancement,Band‐Gap Narrowing,and Metallization of Halide Perovskite Cs3Bi2I9

Low‐toxicity, air‐stable bismuth‐based perovskite materials are attractive substitutes for lead halide perovskites in photovoltaic and optoelectronic devices. The structural, optical, and electrical property changes of zero‐dimensional perovskite Cs₃Bi₂I₉ resulting from lattice compression is presented. An emission enhancement under mild pressure is attributed to the increase in exciton binding energy. Unprecedented band gap narrowing originated from Bi−I bond contraction, and the decrease in bridging Bi‐I‐Bi angle enhances metal halide orbital overlap, thereby breaking through the Shockley–Queisser limit under relatively low pressure. Pressure‐induced structural evolutions correlate well with changes in optical properties, and the changes are reversible upon decompression. Considerable resistance reduction implies a semiconductor‐to‐conductor transition at ca. 28 GPa, and the final confirmed metallic character by electrical experiments indicates a wholly new electronic property.     

Stabilization of Organic–Inorganic Perovskite Layers by Partial Substitution of Iodide by Bromide in Methylammonium Lead Iodide

Thin films of the methylammonium lead halides CH₃NH₃Pb(I_1?xBr_x)₃ are prepared on fluorine‐doped tin oxide substrates and exposed to humid air in the dark and under illumination. To characterize the stability of the materials, UV/Vis spectra are acquired at fixed intervals, accompanied by XRD, energy‐dispersive X‐ray spectroscopy, SEM, and confocal laser scanning microscopy. Different degradation mechanisms are observed depending on the environmental conditions. It is found that bromide can successfully suppress the transformation of the perovskite into the monohydrate, presumably owing to stronger hydrogen‐bonding interactions with the organic cation. However, under illumination in humid air, rather rapid decomposition of the perovskites was still observed, which is due to phase segregation. The use of increased bromide content in methylammonium lead halide absorbers is discussed in terms of their application in perovskite solar cells.     

Oganesson Is a Semiconductor: On the Relativistic Band‐Gap Narrowing in the Heaviest Noble‐Gas Solids

Oganesson (Og) is the most recent addition to Group 18. Investigations of its atomic electronic structure have unraveled a tremendous impact of relativistic effects, raising the question whether the heaviest noble gas lives up to its position in the periodic table. To address the issue, we explore the electronic structure of bulk Og by means of relativistic Kohn–Sham density functional theory and many‐body perturbation theory in the form of the GW method. Calculating the band structure of the noble‐gas solids from Ne to Og, we demonstrate excellent agreement for the band gaps of the experimentally known solids from Ne to Xe and provide values of 7.1 eV and 1.5 eV for the unknown solids of Rn and Og. While this is in line with periodic trends for Rn, the band gap of Og completely breaks with these trends. The surprisingly small band gap of Og moreover means that, in stark contrast to all other noble‐gas solids, the solid form of Og is a semiconductor.