CdSe/CdS/ZnS 量子点体系中的超快载流子动力学

利用飞秒泵浦探测技术对CdSe/CdS/ZnS量子点体系中的超快载流子动力学过程进行了研究. 通过选择不同波长的泵浦光分别激发样品壳层和核层,研究了载流子在壳层和核层中的超快动力学过程. 实验结果表明,载流子在CdS壳层导带中弛豫过程非常迅速(约130 fs),时间明显短于载流子在CdSe核层导带中的弛豫时间(约400 fs). 实验中也发现在CdS壳层和CdSe核层的分界面存在一定量的缺陷态.     

CdTe/CdS核壳结构量子点超快载流子动力学

在水相合成CdTe以及CdTe/CdS核壳结构量子点基础上, 利用基于抽运-探测技术的瞬态差分透射技术研究了CdTe量子点以及不同CdS壳层厚度的CdTe/CdS量子点的最低激子能态的超快激发与弛豫动力学. 研究表明:相比于CdTe,CdTe/CdS量子点的电子空穴由于空间分离,其所需的激发时间要长于电子空穴空间重叠态所需要的激发时间.随着壳层厚度的增加, 量子点表面的钝化有效地减少了表面态相关弛豫机理,并延长相对应的弛豫时间.     

阿秒脉冲的发展及其在原子分子超快动力学中的应用

在过去20年里,激光技术的发展使阿秒科学成为一个新的研究领域,可为量子少体超快演化过程的研究提供新视角.当前实验室中制备的阿秒脉冲以孤立脉冲或脉冲串的形式被广泛应用于实验研究中,其超快变化的光场允许人们操控和跟踪电子在原子尺度的运动,实现对亚飞秒时间尺度电子动力学的实时追踪.本综述聚焦于阿秒科学的重要组成部分,即原子分子超快动力学研究的进展.首先介绍阿秒脉冲的产生和发展,主要包括高次谐波原理和孤立阿秒脉冲分离方法;然后系统地介绍阿秒脉冲在原子分子超快动力学研究中的应用,包括光电离时间延迟、阿秒电荷迁移和非绝热分子动力学等方面;最后对阿秒脉冲在原子分子超快动力学研究中的应用进行总结和展望.     

量子材料中的超快光谱学

亚皮秒激光脉冲能够选择性地激发强关联体系中的激发模式,操控材料从一个有序态进入另外的有序态． “量子材料的超快光谱学”,这仅仅是个老生常谈,还是一个可以促进设计和发现新材料的全新领域？本文列举的一些最新的进展都指向了后者．表面上,超快激光和量子材料是两个在特征和文化上有很大差别的领域,因为量子材料的传统实验是在屏蔽和寂静的低温实验室进行,而激光实验室则会让人联想起视频游戏厅．     

抽运-探测反射技术研究本征CdTe的载流子动力学

采用抽运-探测反射技术,研究了室温下本征CdTe晶体的光致非平衡载流子布局与光子能量和抽运光强的关系.根据实验结果,发现随着抽运光光子能量的提高,快过程在载流子弛豫过程中所占的比例增大;随着抽运光功率的提高,反射率随之增大,快过程时间常数也随之增大.通过建立简单的本征半导体受激载流子弛豫过程模型,讨论了载流子散射、载流子-声子相互作用和载流子复合等的贡献.在抽运光光子能量为1.49 eV(比CdTe的禁带宽度约高20 meV)时,通过双指数函数拟合,得到了本征CdTe中载流子弛豫过程的快、慢时间常数,分别为2.8 ps和158.3 ps.     

钙钛矿中热载流子的超快光谱探测

热载流子能量耗散是太阳能电池效率损耗的主要来源之一.近年来,钙钛矿中的热载流子效应获得了研究人员的广泛关注.相比于传统半导体材料,钙钛矿具有较慢的热载流子冷却过程,有望利用这些热载流子,提高太阳能电池的能量转换效率,克服单结太阳能电池的Shockley-Queisser极限.本文主要阐述了近几年人们利用超快光谱技术在钙...     

锐钛矿和金红石二氧化钛中光生载流子的超快动力学：电声相互作用研究

本文结合玻尔兹曼输运方程和电声散射速率计算研究锐钛矿和金红石二氧化钛中光生载流子的超快动力学过程. 其中,动力学模拟所需的结构参数均通过第一性原理计算获得. 结果表明,由于存在强Fr?hlich型电声耦合,纵光学声子模对两个晶相的能量弛豫过程均有十分显著的影响,但是两个晶相的弛豫机理却表现出明显的差异. 对于单条导带内的弛豫过程,锐钛矿和金红石的能量弛豫时间分别为24.0 fs和11.8 fs,前者约为后者的二倍. 这一差异来源于两个晶相中不同的电子扩散分布以及不同的声学模散射贡献. 对于涉及多条导带的弛豫过程,预测的锐钛矿和金红石的总体弛豫时间分别为47 fs和57 fs,其相对大小与单条导带的情况相反. 分析表明金红石相弛豫较慢是因为存在多个速率控制步骤. 这些发现为调控电子动力学以及设计高效的二氧化钛器件提供了有价值的信息.     

超高速分子摄影术——飞秒泵浦-探测方法在分子超快动力学研究中的应用

飞秒泵浦-探测技术是一种可以在原子运动时间尺度上实时观测化学反应的有力手段.利用飞秒泵浦-探测技术,可以实时观测化学反应过渡态,在分子层次上了解基元化学反应的过程和机理,从而深入地了解化学反应的本质和历程.文章介绍了飞秒泵浦-探测技术的基本原理以及在分子超快动力学研究中的应用,并结合作者所在研究小组的工作,展示了基于该技术的几种典型的飞秒光谱方法在分子超快动力学研究领域的主要成果.最后,展望了该技术的发展前景和方向.     

利用可见-近红外-中红外超快光谱揭示离子交换法制备的少层MoS2中缺陷介导的载流子动力学

本文结合可见-近红外-中红外瞬态吸收光谱技术对离子交换法制备的少层MoS₂中缺陷介导的载流子动力学进行了详细的解析. 在近红外瞬态吸收光谱中观察到的宽带漂白信号表明少层MoS₂纳米片带隙中分布着大量的缺陷态. 实验结果明确揭示了载流子被缺陷态的快速捕获以及进一步的复合过程,证明带隙中的缺陷态对MoS₂光生载流子动力学过程起着至关重要的作用. 在中红外瞬态吸收光谱中观察到的正信号到负信号的转变进一步证实了在导带下小于0.24 eV处存在被载流子占据的缺陷态. 这些在少层MoS₂纳米片中存在的缺陷态可以作为有效的载流子捕获中心来辅助光生载流子在皮秒时间尺度内完成非辐射复合过程.     

瞬态吸收光谱茜素超快动力学研究

激发态质子转移是光物理学、光化学和光生物过程中最基本的化学反应之一.激发态分子内质子转移(excited-state intramolecular proton transfer,ESIPT)通常是指有机分子受到激发,到达激发态后,质子在激发态势能面上从质子供体基团转移到质子受体基团并形成含有分子内氢键多元环的过程,一...     

Incorporation of deep centres in VPE GaAs

The incorporation of deep levels in high purity vapour phase epitaxy (VPE) GaAs is studied as a function of the crystal growth conditions. Two deep levels, at 0.4 eV and 0.75 eV above the valence band, are investigated using photocapacitance. It is shown that their concentrations are always equal and vary together as a function of the AsCl₃ mole fractionX. Two regimes are observed, respectively, characterized by different variations of the total deep level concentrationN _T:N _TαX for lowX, andN _TαX⁻² for highX. In this last range,N _T andN _D are found to vary similarly. This work has been supported by the DRME.     

Electric characterization of GaAs deposited on porous silicon by electrodeposition technique

GaAs thin films were synthesized on porous Si substrate by the electrodeposition technique. The X-ray diffraction studies showed that the as-grown films were crystallised in mixed phase nature orthorhombic and cubic of GaAs. The GaAs film was then electrically characterized using current-voltage (I-V) and capacitance-voltage (C-V) techniques by the way of Al/GaAs Shottky junctions. The electric analysis allowed us to determine the n factor and the barrier height Ф_b0 parameters of Al/GaAs Schottky junctions. The (C-V) characteristics were recorded at frequency signal 1 MHz in order to identify the effect of the surface states on the behaviour of the capacitance of the device.     

Simulation of silicon diffusion in GaAs

The simulation of coupled diffusion of silicon atoms and point defects in GaAs has been carried out for diffusion at the temperatures of 1000 and 850 °C. The amphoteric behavior of silicon atoms in GaAs has been taken into account in the investigation of high concentration diffusion from silicon layer deposited on GaAs substrate. The calculated dopant profiles agree well with the experimental ones and they confirm the adequacy of the model of silicon diffusion used for simulation. A comparison with the experimental data has enabled this work to obtain the parameters of silicon effective diffusivity and other values describing high concentration silicon diffusion in GaAs.     

pH刺激响应水凝胶微观结构动力学的超快红外光谱研究

本文合成了甲基丙烯酸二甲氨基乙酯/丙烯酸共聚水凝胶,并在不同pH条件下表征其宏观溶胀行为. 以硫氰酸根阴离子作为局部红外探针,结合傅里叶变换红外光谱和超快红外光谱学研究了pH刺激响应水凝胶的微观结构动力学. 超快红外光谱数据表明,当水凝胶体系的pH从2.0变为12.0时,硫氰酸根探针的振动弛豫时间常数从(14±1) ps增加到(20±1) ps. 转动各向异性测量结果进一步表明,硫氰酸根探针的转动受到水凝胶中形成的三维网络结构的限制. 尤其是在pH为7.0时,SCN探针的旋转不会衰减到零.     

Ultrafast double pulses ablation of Cr film on glass

Ultrafast lasers ablation of Cr film was investigated by using double-pulse method. Experimental results show that there exists a temporal ablation window effect with each of the double pulses adjusted just smaller than the threshold. When the delay between the double pulses is within the order of 400 ps, the ablation of Cr film could happen. When the delay between the double pulses is beyond the order of 400 ps, the ablation of Cr film would not happen, and the reflectivity from the surface of the Cr film shows a sharp rise at the same time. The two-temperature model was developed into the form of double pulses to explain the experimental phenomena. Furthermore, microbump structures were formed on the surface of Cr film after ablation by ultrafast double pulses. Their heights exhibit an obvious drop between 1 and 10 ps double pulses delay, which is involved with the electron-phonon coupling process according to the numerical simulation. These results should be helpful for understanding the dynamic processes during ultrafast lasers ablation of metal films.     

Time- and frequency-domain measurements of carrier lifetimes in GaN epilayers

Results on time-resolved study of GaN photoluminescence (PL) in a power density range from 0.5 mW/cm² under CW excitation by ultraviolet light emitting diode (UV LED) to 1 GW/cm² under pulsed excitation by YAG:Nd laser in the temperature range from 8 to 300 K are presented. Measurements of PL response in the frequency domain by using amplitude-modulated emission of a UV LED as well as time-resolved PL measurements using a streak camera and light-induced transient grating technique have been used in the study. Yellow luminescence (YL) intensity increases with increasing temperature up to 120 K and faster components in YL decay switch to slower components with increasing temperature under UV LED excitation. At low carrier densities, the trapping decreases the carrier lifetime below 250 ps, while the carrier lifetime in the same GaN sample under excitation ensuring saturation of the traps equals 2 ns.     

飞秒泵浦-探测质谱方法研究苯内转换动力学

以飞秒 40 0及 2 66nm激光脉冲结合泵浦 探测飞行时间质谱方法研究了苯S2 态内转换动力学 .40 0nm双光子过程将苯分子激发到S2 电子态 ,布居在S2 电子态的分子由于能级耦合无辐射弛豫到S1电子态 .通过测定C6 H6 +讯号强度随泵浦 探测延迟时间的改变 ,获得苯S2 及S1电子态的衰减寿命分别为 ( 48± 1)fs及 ( 6.5± 0 .2 )ps ,S2 态及S1电子态的消激发机理被认为是相应势能面间的锥形交叉引起的内转换     

超快二维红外光谱用于研究单体水分子中的直接振动能量传递

Vibrational relaxation dynamics of monomeric water molecule dissolved in d-chloroform solution were revisited using the two dimensional Infrared (2D IR) spectroscopy. The vibrational lifetime of OH bending in monomeric water shows a bi-exponential decay. The fast component (T₁=(1.2±0.1) ps) is caused by the rapid population equilibration between the vibrational modes of the monomeric water molecule. The slow component (T₂=(26.4±0.2) ps) is mainly caused by the vibrational population decay of OH bending mode. The reorientation of the OH bending in monomeric water is determined with a time constant of τ=(1.2±0.1) ps which is much faster than the rotational dynamics of water molecules in the bulk solution. Furthermore, we are able to reveal the direct vibrational energy transfer from OH stretching to OH bending in monomeric water dissolved in d-chloroform for the first time. The vibrational coupling and relative orientation of transition dipole moment between OH bending and stretching that effect their intra-molecular vibrational energy transfer rates are discussed in detail.