Cu~(2+)离子注入的石英光波导的特性研究（英文）

利用Cu~(2+)离子注入的方式在熔融石英和石英晶体上分别制备了平面光波导结构.通过棱镜耦合实验测试了两种光波导的导模特性,结果表明:在同样的注入条件下熔融石英上形成了增加型的光波导结构,而石英晶体上形成了位垒型的光波导结构.研究了退火温度对两种光波导导模折射率的影响,熔融石英光波导中导模的折射率随着退火温度的升高而降低,而石英晶体光波导中导模的折射率随着退火温度的升高先增加后降低.为了进一步分析离子注入两种材料形成光波导的微观机理,利用SRIM模拟了Cu~(2+)离子注入两种材料的电子能量损失和核能量损失,并且模拟了两种光波导结构的折射率分布.模拟结果表明:熔融石英光波导的主要形成原因是离子注入表面的折射率大于其体材料的折射率,而石英晶体光波导的主要形成原因是离子射程末端的折射率小于其体材料的折射率.因此,在熔融石英光波导的形成中电子能量损失起主要作用,而在石英晶体光波导的形成中核能量损失起主要作用.     

离子注入法形成的LiTaO3平板光波导的特性分析

用能量为２．８ＭｅＶ、剂量为１．４×１０１６ｉｏｎ／ｃｍ２的Ｈｅ＋在室温（３００Ｋ）下注入到晶体材料ＬｉＴａＯ３中，形成了离子注入平板光波导。用棱镜耦合法观察和测量了ＬｉＴａＯ３波导导模的分布，并对退火前后的ＬｉＴａＯ３波导的折射率分布进行了计算和比较。利用背散射／沟道技术分析了由于Ｈｅ＋的注入而引起的波导表面的损伤。     

He^＋离子注入LiNbO3晶体波导的制备及其性能研究

报道了液氮温度下Ｈｅ＾＋离子注入ＬｉＮｂＯ３波导的制备，采用棱镜耦合法测量了波导退火前后导模的有效折射率，计算了波导层折射率的分布和晶体中Ｈｅ＾＋离子的射程分布和损伤分布，两者吻合得较好。     

光折变表面波诱导的薄层波导中的导波模式

利用数值模拟对扩散非线性机制下由光折变表面波诱导的薄层波导中导模的形成和特点进行了研究。采用分布傅里叶法对导模的传输特性进行了模拟。通过求解本征方程,对光折变表面波诱导的薄层波导中存在的导波模式进行了数值求解。通过调节传播常数和波导参数的方法,可以控制导模的阶数和传播波形。随着阶数的增加,导模轮廓的对称性越来越差;随着波导参数的增加,导模的峰值振幅单调递增。导模的能量主要聚集在晶体薄层波导中靠近-c轴的一侧,随着传播常数的增大,导模能量先减小后增大,且导模可以稳定传播。     

质子注入掺镱磷酸盐玻璃平面光波导的近红外特性

在能量为(0.5+0.55)MeV和剂量为(1.0+2.0)×10^16 ions/cm^2的条件下,通过氢离子注入制备了掺Yb^3+磷酸盐玻璃波导,并研究了该波导在近红外波段的特性.棱镜耦合法测量的离子注入波导的导模的有效折射率与反射计算法计算的有效折射率基本吻合.通过模拟辐照引起的空位分布,探讨了离子注入平面波导的形成理论.利用FD-BPM对波导中的传播模式进行了模拟,结果表明高能量的氢离子注入掺Yb 3+磷酸盐玻璃能够制备出近红外波导结构.     

质子注入掺镱磷酸盐玻璃平面光波导的近红外特性（英文）

在能量为(0.5+0.55)MeV和剂量为(1.0+2.0)×10~(16) ions/cm~2的条件下,通过氢离子注入制备了掺Yb~(3+)磷酸盐玻璃波导,并研究了该波导在近红外波段的特性.棱镜耦合法测量的离子注入波导的导模的有效折射率与反射计算法计算的有效折射率基本吻合.通过模拟辐照引起的空位分布,探讨了离子注入平面波导的形成理论.利用FD-BPM对波导中的传播模式进行了模拟,结果表明高能量的氢离子注入掺Yb~(3+)磷酸盐玻璃能够制备出近红外波导结构.     

基于混合导光型光子晶体光纤的波分解复用器研究

设计了一种基于混合导光型光子晶体光纤的波分解复用器,该波分解复用器同时具有折射率导光型光子晶体光纤和带隙导光型光子晶体光纤的特点,可用于稀疏型波分复用系统中.设计的稀疏型波分解复用器由一段三芯光子晶体光纤组成,通过填充不同折射率的材料.形成了混合导光型光子晶体光纤.根据耦合模原理,在临近的波导中,当传播常数相等时,模式之间发生强烈耦合.能量在波导之间交替.由于填充的材料折射率不同,使得光功率在两个小同的波长上发生耦合,构成了两个不同响应波长的光滤波器.通过选择合适的光纤长度,使得在光纤的输出端,不同波长的光从不同的波导输出,实现波分解复用的功能.采用全矢量有限元法分析了光纤传输特性,计算了不同波长光的耦合长度.采用光束传播法仿真发现,长度为4.3 mm的光纤能实现波长为1.31μm和1.55μm光的解复用.     

双包层单模光纤传感器及其在温度/湿度传感方面的应用

提出了一种双包层单模光纤传感器结构,根据波导理论推导出了光纤中导模变为泄漏模时,外包层折射率与双包层结构参量之间的关系,获得了这种光强调制型传感器可测量的折射率变化范围.利用已知热光系数的材料制作的温度传感器,从实验上证实了理论分析结果,并由理论与实验结果的分析得到了传感器的工作原理是:导模变为泄漏模后,输出光强与外包...     

含缺陷平板光子晶体十字波导传输特性研究

提出一种在光子晶体十字波导中加入点阵缺陷的特殊结构波导.采用时域有限差分法(FDTD)对该结构的导波特性进行数值模拟,计算结果表明:含缺陷结构的光子晶体波导的透射光谱较不含缺陷结构光子晶体波导的透射光谱带宽变得更窄,此结构具有窄带滤波作用.当改变波导中缺陷结构折射率取值时,该波导透射光的中心频率随缺陷介质折射率的增大而线性减小.改变中心缺陷介质柱直径时,该波导透射光波中心频率随介质柱直径的增大也呈逐渐减小趋势.这种光子晶体十字波导可作为一种窄带滤波器、分光器和可调式选频器等器件,具有一定的应用前景.     

转移矩阵法在负折射率介质材料平板波导中的应用研究

利用严格电磁理论,推导出了适用于负折射率介质材料光波导的转移矩阵,分析讨论了转移矩阵的性质和应用.利用转移矩阵方法,推导出导波层为负折射率介质材料、覆盖层和衬底为右手材料的三层对称介质光波导的本征色散方程.用图解法研究了负折射率介质波导中TE波的异常色散特性.在负折射材料介质波导中没有零阶模,最低阶为1阶模,并且有截止频率,只有波导参量满足一定条件的时候才会存在,导模的横向波数可以为实数和纯虚数,而正折射率介质波导导模的横向波数只能为实数.     

Ion implantation into fused quartz for integrated optical circuits

Results obtained in the fabrication of slab and strip waveguides by ion implantation into fused quartz are discussed. Using a step-index waveguide model the increase in refractive index is calculated. The optical loss is smaller than 1 dB/cm at λ = 568 nm without annealing. The properties of strip waveguides fabricated by ion implantation through photoresist masks of thicknesses from 0.4 μm to 0.8 μm are described. A bright fluorescence is observed with emission at 530 nm and 640 nm and its dependence on ion fluence and ion energy is measured.     

Dosimetry techniques

The formation and annealing of defects in ion implanted silicon dioxide layers and in connection with them the refractive index change are of high interest for the production of electronic and integrated optical devices.

Several studies have shown that the ion implantation in fused silica leads to a compaction of the material and in consequence to an increasing of the refractive index.^1–6 On the other hand the defect formation in crystalline quartz is connected with a decreasing of the refractive index up to nearly the same value for ion implanted quartz and fused silica layers in the high dose region.^1,5 On the base of this effects optical waveguides had been produced by ion implantation in both material.^2,7–12 However, the nature of the mechanisms responsible for the defect formation and for the changes of the optical properties are not well understood.

This paper reports on the ion dose and annealing temperature dependence of several defects in connection with the refractive index change.     

Determination of migration of ion-implanted Ar and Zn in silica by backscattering spectrometry

It is well known that the refractive indices of lots of materials can be modified by ion implantation, which is important for waveguide fabrication. In this work the effect of Ar and Zn ion implantation on silica layers was investigated by Rutherford Backscattering Spectrometry (RBS) and Spectroscopic Ellipsometry (SE). Silica layers produced by chemical vapour deposition technique on single crystal silicon wafers were implanted by Ar and Zn ions with a fluence of 1–2?×10¹⁶ Ar/cm² and 2.5?×10¹⁶ Zn/cm², respectively. The refractive indices of the implanted silica layers before and after annealing at 300°C and 600°C were determined by SE. The migration of the implanted element was studied by real-time RBS up to 500°C. It was found that the implanted Ar escapes from the sample at 300°C. Although the refractive indices of the Ar-implanted silica layers were increased compared to the as-grown samples, after the annealing this increase in the refractive indices vanished. In case of the Zn-implanted silica layer both the distribution of the Zn and the change in the refractive indices were found to be stable. Zn implantation seems to be an ideal choice for producing waveguides.     

Characterization of optical waveguides in β-BaB2O4 crystals formed by 3.0 MeV Ni ions implantation

We report on the optical planar waveguides formation and modal characterization in β-BaB₂O₄ crystals by Ni²⁺ ion implantation at energy of 3.0 MeV and doses of 10¹⁴ ions/cm². The prism coupling method was used to investigate the dark-mode property at wavelengths of 633 nm and 1539 nm, respectively. The refractive index profiles of the waveguides with different doses were reconstructed by an effective refractive index method based on the reflectivity calculation method (RCM). The modal analysis indicates that the fields of TM modes can be well restricted in the guiding region, which means the formation of non-leaky waveguide in the crystal.     

离子注入石英玻璃光波导的研究

在熔融石英玻璃衬底上,通过注入氮离子和硼离子,制成了低损耗、单模平面光波导.波导的最大折射率和离子浓度分布的半宽度分别是1.48和0.5μm,波导损耗<0.1dB/cm.     

Characterization of laser waveguides in Nd:CNGG crystals formed by low fluence carbon ion implantation

We report on Nd:CNGG active planar waveguides produced by 6.0 MeV carbon ion implantation at fluence from 1 × 10¹⁴ ions/cm² to 8 × 10¹⁴ ions/cm². The refractive index profiles, which were reconstructed according to the measured dark mode spectroscopy, showed that the refractive indices had negative changes in the surface region, forming typical barrier waveguide. The width of waveguide structure induced by carbon ion implantation is ∼3.8 μm. The typical barrier-shaped distribution may be mainly due to the nuclear energy deposition of the incident ions into the substrate. By performing a modal analysis on the observed TE modes, it was found that the TE₀ and TE₁ modes can be well-confined inside the waveguide.     

Planar optical waveguide in Cu-doped potassium sodium strontium barium niobate crystal formed by mega-electron-volt He-ion implantation

The first planar optical waveguide to the authors' knowledge has been formed in Cu-doped potassium sodium strontium barium niobate crystal by mega-electron-volt He(+) implantation. Both TE and TM modes are observed. The profiles of the ordinary and the extraordinary refractive indices are deduced from dark-line mode spectroscopy. The results show that the mega-electron-volt He implantation results in a decrease in refractive index in barriers for both n(o) and n(e), but for n(e) there is an obvious increase in the waveguide region. From an experiment in photorefractive two-wave mixing, it is found that the erasure time for two-wave mixing is prolonged by ion implantation.     

Enhanced refractive index well-confined planar and channel waveguides in KTiOPO<Subscript>4</Subscript> produced by MeV C<Superscript>3+</Superscript> ion implantation with low dose

We report on the fabrication and characterization of planar and channel waveguides in KTiOPO₄ crystals by 6.0 MeV C³⁺ ion implantation with the dose of 1×10¹⁴ ions/cm². The dark mode spectroscopy of the planar waveguide was measured using a prism coupling arrangement. An increase of the both n _x and n _y refractive indices induced by the annealing after implantation is believed to be responsible for waveguide formation. The bright near-field intensity distribution of the transverse-electric and transverse-magnetic modes in the annealed channel waveguide was collected and studied by end-coupling method.     

Characterization of optical waveguide in Nd: GdVO4 by triple-energy oxygen ion implantation

We report on the optical planar waveguide formation and modal characterization in Nd: GdVO₄ crystals by triple oxygen ion implantation at energies of (2.4, 3.0, and 3.6 MeV) and fluences of (1.4, 1.4, and 3.1)  × 10¹⁴ions/cm². The prism-coupling method is used to investigate the dark-mode property at wavelength of 632.8 nm. The refractive index profiles of the waveguide are reconstructed by an effective refractive index, n_eff method. The modal analysis shows that the fields of TE modes are well restricted in the guiding region, which means the formation of nonleaky waveguide in the crystal.