Ba1-xB2-y-zO4SixAlyGaz晶体和频可调谐深紫外飞秒激光器

介绍了一种基于新型非线性晶体Ba_1-xB_2-y-zO₄Si_xAl_yGa_z 的可调谐深紫外飞秒激光光源. 从理论上分析了基频光和倍频光在通过非线性晶体时所造成的空间走离和群速度失配, 为了补偿空间走离以及波长调谐过程中晶体折射造成的光束偏离现象, 将两块相同的倍频晶体成镜像放置来产生二次谐波. 并调节延迟线的长度来补偿基频光和倍频光之间的群速度失配, 从而提高和频转换效率. 然后通过和频方式进行三倍频和四倍频来突破晶体相位匹配条件的限制, 产生了波长低于200 nm的深紫外飞秒激光. 利用钛宝石激光器提供基频光光源, 最终在250–300 nm, 192.5–210 nm 范围内获得了高重频、可调谐超短脉冲紫外和深紫外激光. 并在基频光波长为800 nm时, 得到的二倍频、三倍频和四倍频的功率分别为1.28 W, 194 mW和5.8 mW, 相对于前一级的转换效率依次为46.14%, 15.16%和3%. 采用互相关法测量得到266.7 nm紫外激光的脉冲宽度约为640.4 fs.     

Magnetic properties of the Bi1.95Sr2.05−xLaxCuOy (Bi-2201) superconducting phase

We have investigated the reversible mixed-state magnetization M of three lanthanum substituted Bi_1.95Sr_2.05−xLa_xCuO_y (Bi-2201) ceramic samples having different critical temperatures T_c ranging from 20.0 to 35.5 K. As for the Bi₂Sr₂CaCu₂O_8+δ (Bi-2212) phase, we found that anisotropy of Bi-2201 is large. A manifestation of this anisotropy is the field independent magnetization M^* observed at a temperature T^*. In the framework of the London model, and including thermal fluctuations of vortices, we found for the temperature dependence of the penetration depth λ_ab(T) = λ_ab(0)[1 − (T/T_c0)ⁿ]^−1/2, with n 1.7 and λ_ab (T = 0) 4000 Å. The estimated upper critical fields μ₀H_c2,c are of the order of 10 T. We observe a peculiar negative slope M/T at low temperature and sufficiently high external magnetic field. This feature seems to be a characteristic of the Bi-2201 phase. However, we do not know whether it is associated with the superconducting mixed-state. A small amount of magnetic impurities could also be responsible for this behavior. Finally, the behavior of the reversible magnetization of the Bi-2201 samples investigated, which are situated at the optimal and in the overdoped region, did not indicate any unusual temperature dependence for the upper critical field H_c2,c.     

Estimation of conductivity parameters in Sr1 − xThxF2 + 2x solid solution with fluorite-type structure

Concentration of nn-dipoles, nnn-dipoles and charge carriers as well as parameters related to their reorientation and mobility have been estimated from an analysis of a.c. conductivity data of polycrystalline samples of the Sr_{1 − x}Th_xF_{2 + 2x} solid solution. The molar fraction of charge carriers has been evaluated as a function of composition. Results obtained confirm, in agreement with the clustering process model, that the (F_i)_m ions responsible for long range motions in Sr_{1 − x}Th_xF_{2 + 2x} are interstitial fluoride ions of F type.     

Strain and defect densities in Si/Si1-xGex heterostructures investigated by ion scattering and X-ray diffraction

MBE-grown Si/Si_1-xGe_x heterostructures on (100) Si have been characterized by Rutherford backscattering spectroscopy (RBS), ion channeling and X-ray diffraction to investigate defect densities and tetragonal lattice distortion. Critical layer thickness and relaxation of strain by formation of misfit dislocations are strongly dependent on the growth temperature. A Si_0.67Ge_0.33 layer with a thickness of 2000 Å is found to be still fully strained at a growth temperature of 450°C, whereas the same layer grown at 550°C shows considerable strain relaxation by dislocations. To obtain better depth resolution than with conventional RBS, medium energy ion scattering (MEIS) experiments have been performed on Si/Ge superlattices with layer thicknesses of 10–40 Å. A position-sensitive toroidal electrostatic analyser was employed to detect the backscattered ions simultaneously over an angular range of 30° with an energy resolution of 1 keV FWHM for 250 keV He ions, corresponding to a depth resolution of about 10 Å.     

Physical characterization of OMVPE-grown AlxGa1-xAs multi-layer films by means of non-destructive optical reflectometry

A novel Fourier transform technique which was developed by us previously, is applied in this work for non-destructive determination of thickness and refractive index steps of experimental multilayer heteroepitaxial structures. No time consuming least-squares curve-fits are required and theoretically there is no limit on the number of layers which can be analyzed. In order to demonstrate the above method experimentally, multilayer structures of Al_xGa_1-xAs containing up to five layers on GaAs substrates, were grown by organometallic vapour phase epitaxy (OMVPE). For calibration purposes, initial experiments involved the growth of Al_xGa_1-xAs single epilayers on GaAs substrates by the same technique. Layers were grown at five different compositions from x = 0.1 to x = 0.5. Both photoluminescence (at 12 K) and double-crystal X-ray diffraction measurements were undertaken on the single layers in order to establish the composition of the material. The results show excellent correspondence with each other. These results were also compared to secondary ion mass spectrometry data. The agreement between the optical technique developed by us and the other analytical methods was excellent.     

NiO_x作为空穴传输层对有机太阳能电池光吸收的影响

基于多层膜系模型的传输矩阵方法、麦克斯韦方程和光子吸收方程,研究了NiOx作为替代3,4-乙撑二氧噻吩:聚苯乙烯磺酸盐(PEDOT:PSS)的空穴传输材料对聚3-己噻吩(P3HT)和富勒烯衍生物([6,6]-phenyl-C61-butyric acid methyl ester,PC61BM)共混体异质结有机太阳能电池器件内部光电场分布和光吸收特性的影响.分别制备了以NiOx和PEDOT:PSS为空穴传输层,P3HT:PCBM为活性层的有机太阳能电池,并通过数值模拟的方法比较了NiOx和PEDOT:PSS两种空穴传输材料对器件光伏特性的影响.结果表明:10 nm的NiOx空穴传输层器件比40 nm的PEDOT:PSS器件获得了更大的短路电流和填充因子,并具有更高的能量转化效率.     

A spectroscopic ellipsometric investigation of new critical points of Zn1−xMnxS epilayers

Zn_1−xMn_xS epilayers were grown on GaAs (1 0 0) substrates by hot-wall epitaxy. X-ray diffraction (XRD) patterns revealed that all the epilayers have a zincblende structure. The optical properties were investigated using spectroscopic ellipsometry at 300 K from 3.0 to 8.5 eV. The obtained data were analyzed for determining the critical points of pseudodielectric function spectra, (E) = ₁(E) + i₂(E), such as E₀, E₀ + Δ₀, and E₁, and three E₂ (Σ, Δ, Γ) structures at a lower Mn composition range. These critical points were determined by analytical line-shapes fitted to numerically calculated derivatives of their pseudodielectric functions. The observation of new peaks, as well as the shifting and broadening of the critical points of Zn_1−xMn_xS epilayers, were investigated as a function of Mn composition by ellipsometric measurements for the first time. The characteristics of the peaks changed with increasing Mn composition. In particular, four new peaks were observed between 4.0 and 8.0 eV for Zn_1−xMn_xS epilayers, and their characteristics were investigated in this study.     

Monte Carlo study of the magnetic properties of Fe0.9−qMn0.1Alq-disordered alloys

Within the framework of a random site-diluted Ising model with nearest-neighbor interactions, and using the Metropolis algorithm for equilibration and energy minimization, we have computed the ensemble and configurational averages for magnetization per site, magnetic susceptibility and specific heat of Fe_0.9−qMn_0.1Al_q-disordered alloys with 0.1q0.55. In the model, atoms have been randomly distributed on a body-centered cubic lattice in order to simulate the disorder and structure as that obtained in arc-melted Fe_0.9−qMn_0.1Al_q alloys treated at high temperatures during long periods of time and followed by fast quenching. Competitive interactions coming from Fe–Fe ferromagnetic bonds and Fe–Mn and Mn–Mn antiferromagnetic couplings, as well as the Al dilutor effect, have been taken into account in our study. Results allow us to conclude that, in agreement with previous Mössbauer data of the average hyperfine field, for which a comparison is also carried out, the Fe_0.9−qMn_0.1Al_q-disordered alloys are well characterized by a critical concentration at room temperature at around 40 at% Al, for which the system undergoes a transition from a ferromagnetic state to a paramagnetic one. The finite size scaling analysis to obtain the critical Al concentration in the thermodynamic limit, as well as the critical exponents, is also presented and discussed.     

Luminescence from Si-Si1−xGex/Si1−yCy-Si structures

Near band edge photoluminescence has been obtained from Si_1−yC_y quantum well (QW) and neighboring Si_1−xGe_x/Si_1−yC_y double QW (DQW) structures. Enhanced no-phonon recombination is observed from the DQW structures and it is attributed to a breaking of the k-selection rule in the presence of the heterointerface. The luminescence persists for measurement temperatures up to 30–50 K and the intensity exhibits a quenching behavior with an activation energy equal to 8–20 meV. In electroluminescence only recombination in the Si_1−xGe_x layer has been observed from neighboring Si_1−xGe_x and Si_1−yC_y DQW structures.     

Structure and properties of Bi2Sr2CaCu2Ox/Bi2Sr2CuOx superlattices prepared by RF magnetron sputtering

We have prepared Bi₂Sr₂CaCu₂O_x/Bi₂Sr₂CuO_x (2212/2201) superlattices with various stacking periodicity by multitarget RF magnetron sputtering. Their crystal structure and electrical properties were investigated. The superlattice was found to be successfully constructed from the data of XRD patterns, AES, etc. The critical temperature increased almost linearly with increasing thickness of the 2212 phase up to a thickness of 6 unit cells. On the other hand, it did not decrease as the thickness of the 2201 layers was increased. The unit cell/unit cell superlattice showed T_{c zero} of 30 K.     

线性微波化学气相沉积制备SiNx薄膜的微结构及光学性能研究

利用自主研发的线性微波化学气相沉积系统在不同微波功率、微波占空比、基片温度、特气比例条件下制备了SiN_x薄膜. 通过扫描电子显微镜、椭圆偏振仪等表征测量技术, 研究了不同工艺参数对SiN_x薄膜表面形貌、元素配比、折射率、沉积速度的影响, 并探讨了薄膜元素配比、折射率、沉积速度间的关系. 结果表明: 利用线性微波沉积技术, 不同工艺参数下制备的SiN_x薄膜组成元素分布均匀, 同时具有平整的表面状态; 特气比例和微波占空比是影响薄膜折射率的最主要因素, 薄膜折射率在1.92–2.33之间连续可调; 微波功率、微波占空比、沉积温度、特气比例都对SiN_x 薄膜沉积速度影响较大, 制备的SiN_x薄膜最大沉积速度为135 nm·min^-1.     

Anomalies of ultrasonic velocity in high-Tc ceramics YBa2Cu3Oy and BiSrCaCu2Oy

Ultrasonic longitudinal velocity and adsorption have been measured in ceramic superconductors YBa₂Cu₃O_y with various porosity and also in BiSrCaCu₂O_y. A velocity drop of about 400 ppm was found at T_c only in the measurements on cooling. The magnitude of the velocity drop is anomalously large compared with the value expected from the thermodynamics. A hysteresis of velocity with respect to temperature was observed in all the samples studied. It is suggested that some structural change at pore size level is responsible for this phenomenon.     

Sr掺杂对La_(1-x)Sr_xMnO_3/LaAlO_3/SrTiO_3界面电子结构的影响

采用基于密度泛函理论的第一性原理计算方法,系统地研究了La_(1-x)Sr_xMnO_3层中Sr的掺杂方式和掺杂量对4La_(1-x)Sr_xMnO_3/3LaAlO_3/4SrTiO_3(LSMO/LAO/STO)异质结构原子和电子结构的影响.结果表明:对于相同的Sr掺杂量,掺杂方式的差异对体系电子结构的影响微弱,不会导致体系发生金属-绝缘体转变;掺杂量的不同对体系电子结构有着显著的影响,当Sr的掺杂量较少时,LAO/STO界面处存在着准二维电子气,当Sr的掺杂量高于1/3时,LAO/STO界面处准二维电子气消失.我们相信,Sr的引入以及通过Sr掺杂量的改变可以对LSMO覆盖层极化进行调控,这也是导致体系LAO/STO界面处金属-绝缘体转变的可能原因,进一步为极化灾变机制导致的界面处电子重构提供了证据.     

Domain state model for exchange bias: thickness dependence of diluted antiferromagnetic Co1−yO on exchange bias in Co/CoO

The thickness dependence of different diluted antiferromagnetic Co_1−yO layers on the exchange bias (EB) in ferro/antiferromagnetic Co/Co_1−yO bilayers is investigated. For undiluted samples the EB decreases above a layer thickness of 5 nm whereas it increases and saturates for AFM layers thicker than 20 nm for diluted samples. These findings support the domain state model for EB.     

Dielectric behavior of hexaferrites BaCo2−xZnxFe16O27

The dielectric constant (′) and dielectric loss (tan δ) for hexaferrites BaCo_2−xZn_xFe₁₆O₂₇ have been studied as a function of frequency (f), temperature (T) and composition (x). The experimental results indicate that ′ and tan δ above the relaxation frequency only decrease as the frequency increases and as the temperature decreases. Tan δ shows the dielectric relaxation at certain critical frequencies which rise as temperature increases. The activation energy for the dielectric relaxation (E_D), ′, and tan δ are found to be minimum for x = 0.8.     

Moisture barrier of AlxOy coating on poly(ethylene terephthalate), poly(ethylene naphthalate) and poly(carbonate) substrates

The moisture barrier property of Al_xO_y coated poly(ethylene terephthalate) (PET), poly(ethylene naphthalate) (PEN) and poly(carbonate) (PC), have been investigated. The differences in the morphology of the Al_xO_y sputtered grown on these substrate were investigated using atomic force microscopy (AFM). The initial growth of the Al_xO_y followed closely the topology of the substrate and an amplified roughness was observed. In the fully grown Al_xO_y, the comparative roughness followed that of the substrates. It has been found that a single layer Al_xO_y improved the moisture barrier of PET by an order of magnitude, PC by two orders of magnitude while no improvement was observed for PEN. UV-ozone treatment on PC further improved the moisture barrier, while no improvement was observed for PET and PEN. The comparative effects of the substrate surface roughness and surface energy on the moisture barrier are discussed.     

Oxygen nonstoichiometry and phase transitions of the neodymium-rich Nd1+xBa2−xCu3Oz solid solution

On the basis of chemical, thermal analysis and Cu K-edge X-ray absorption measurements, oxygen content in the Nd_1+xBa_2−xCu₃O_z solid solution was determined between 1000°C in air and 400°C in oxygen for x=0.05–0.9 compositions. It has been observed that the oxygen nonstoichiometry Δz of the Nd_1+xBa_2−xCu₃O_7+x/2−Δz solid solution decreases 2–2.5 times for a large substitution (Δz≈0.3–0.33 for x=0.9), despite of the acclaimed higher total oxygen content. The difference in nonstoichiometry is explained by a higher average value of the copper oxidation state (ACV), which is vital for the solid solution with large x even at elevated temperatures (ACV≈2–2.05 for x>0.3 at 1000°C, PO₂=0.21 atm). On the contrary, the ACV after complete oxygenation is almost constant (about 2.25–2.3) for the whole series. The x-dependence of the oxygen content is not monotonous and structural phase transitions can be observed at x=0.3 and x=0.6, as confirmed by the X-ray diffraction and the Raman scattering spectroscopy. The first well-known transition is connected with the oxygen disorder due to the Nd substitution for Ba at random Ba-sites. In the present work, it is proved by the apical oxygen mode broadening in Raman spectra. Ordering of the Nd and Ba atoms with a subsequent orthorhombic distortion of the lattice may occur even at 1000°C in air due to the second transformation at x≈0.6. The invariable orthorhombicity of the Nd-rich solid solution with x>0.6 is not caused by the oxygen absorption as in the x=0.05 case. Existence of high- and low-temperature orthorhombic modifications of this solid solution has been observed for the first time. Finally, a tentative 3D (z–x–T) diagram is suggested for the Nd_1+xBa_2−xCu₃O_z solid solution up to 1000°C in air, including the new x=0.6–0.9 region.     

Field induced flux pinning in Nd1+xBa2−xCu3O7−δ single crystal

The flux pinning behavior of a Nd_1+xBa_2−xCu₃O_7−δ (Nd123) single crystal, which exhibited a peak effect, has been studied by monitoring the time decay of the magnetic moment. The apparent pinning energy (U₀^*) was deduced from flux creep data on the basis of the Anderson-Kim model. The magnetic field dependence of U₀^* showed maxima at peak fields which depended on the temperatures, in a similar manner to those of critical current densities. In addition, the temperature dependence of U₀^* showed several features. To explain the increase in U₀^* with the field as well as its temperature and field dependence, we made a numerical calculation by introducing an additional pinning energy which increased with increasing field. The results are in good agreement with the experimental data, especially at temperatures above 60 K, where the contribution of field induced pinning centers is believed to be dominant.     

Oxygen overdoping in superconducting and non-superconducting Y1−xPrxBa2Cu3Oy

We present the evolution of magnetic and structural properties of Y_1−xPr_xBa₂Cu₃O_y (x0.5 and x=1) single crystals and polycrystalline materials when the oxygen concentration y is varied from under- to overdoping. We have found a monotonous evolution of the Pr Néel temperature for x=1 samples and a maximum of the superconducting critical temperature for the x0.5 samples. The structural properties as detected by X-ray diffraction and Raman spectroscopy show no instabilities when crossing the optimal doping region as was found in the x=0 material.     

直流磁控溅射厚度对Cu(Inx,Ga1-x)Se2背接触Mo薄膜性能的影响

采用直流磁控溅射工艺, 在一定条件下通过控制溅射时间, 在钠钙玻璃上制备了不同厚度的用于Cu(In_x, Ga_1-x)Se₂薄膜太阳电池背接触材料的Mo薄膜, 并利用X射线衍射 (XRD)、场发射扫描电子显微镜 (SEM)、四探针测试仪、台阶仪研究了厚度对溅射时间、薄膜微结构、电学性能及力学性能的交互影响. Mo薄膜的厚度与溅射时间呈线性递增关系; 随厚度的增大, Mo薄膜 (110) 和 (211) 面峰强均逐渐增大, 择优生长从(110)方向逐渐向 (211)方向转变, 方块电阻值只随 (110) 方向上的生长而急剧减小直到一特定值约2 Ω/⇑, 电导率随薄膜的 (110) 择优取向程度的降低而线性减小直到一特定值约0.96×10^-4 Ω·cm; Mo薄膜内部是一种多孔的长形簇状颗粒和颗粒间隙交织的结构, 并处于拉应力态, 其内部应变随薄膜厚度的增大而减小. 关键词： Mo薄膜 CIGS背接触 厚度 微结构