Broadband LWIR and MWIR absorber by trapezoid multilayered grating and SiO<Subscript>2</Subscript> hybrid structures

A broadband metamaterial absorber with high absorption simultaneously in mid-wave infrared (MWIR) and long-wave infrared (LWIR) was proposed. In the MWIR, the absorption higher than 0.8 is from 4 to 6.3 µm, while the absorption in the LWIR is from 8.7 and 9.6 µm. The absorber is insensitive to the incident angle. The broadband absorption in the MWIR is due to the slow-light effect of the trapezoid multilayered grating structure. And the broadband absorption in the LWIR is due to the phonon polariton resonant of trapezoid SiO₂ layer. In the broadband high absorption region, the atmosphere is transparent, which may greatly promote the practical application of the absorber in double-color IR imaging, detecting, infrared stealth and thermal emitting.     

Surface plasmon-enhanced dual-band infrared absorber for VO_x-based microbolometer application

We propose a periodic structure as an extra absorption layer(i.e., absorber) based on surface plasmon resonance effects, enhancing dual-band absorption in both middle wavelength infrared(MWIR) and long wavelength infrared(LWIR)regions. Periodic gold disks are selectively patterned onto the top layer of suspended SiN/VO_2/SiN sandwich-structure.We employ the finite element method to model this structure in COMSOL Multiphysics including a proposed method of modulating the absorption peak. Simulation results show that the absorber has two absorption peaks at wavelengths λ =4.8 μm and λ = 9 μm with the absorption magnitudes more than 0.98 and 0.94 in MWIR and LWIR regions, respectively. In addition, the absorber achieves broad spectrum absorption in LWIR region, in the meanwhile, tunable dual-band absorption peaks can be achieved by variable heights of cavity as well as diameters and periodicity of disk. Thus, this designed absorber can be a good candidate for enhancing the performance of dual band uncooled infrared detector, furthermore, the manufacturing process of cavity can be easily simplified so that the reliability of such devices can be improved.     

混合谐振模式宽带长波红外超表面吸收器研究

为了满足红外探测器件集成化和对红外宽光谱范围吸收的需求,设计了一种工作在长波红外波段(8~14μm)的超宽带、高吸收、极化不敏感的超材料吸收器。通过在金属-介质-金属三层异质的超材料吸收器结构的顶部金属周围镶嵌一层介质形成超表面,以增加谐振强度和吸收带宽。在8~13.6μm的带宽范围内,该结构有超过90%的平均吸收率,覆盖了大部分长波红外大气窗口波段,对红外探测领域有着重要意义。研究结果表明:镶嵌的金属-介质组成的介质波导模式和谐振腔模式的结合以及传播型表面等离激元模式的激发是形成宽带高吸收的主要原因,并且谐振模式的谐振波长可以通过相关参数来进行调控。本文的研究结果为可调谐宽带长波红外吸收材料的设计提供参考,该设计方法可推广到中波红外波段、甚至长波红外或其它波段。     

The transition mechanisms of quantum-dot/quantum-well mixed-mode infrared photodetectors

The transition mechanisms of a 10-period quantum-dot (QD)/quantum-well (QW) mixed-mode infrared photodetector is investigated in this paper. Both mid-wavelength infrared (MWIR) and long-wavelength infrared (LWIR) responses are observed for the device. The lower normal incident absorption of the LWIR peak suggests that the QW intra-band transition is responsible for the response while the QD intra-band transition for the MWIR response. Due to the coexistence of MWIR and LWIR responses, the MWIR response should be resulted from one-photon transition while the LWIR response from the two-photon transition. To explain the transition mechanisms of the MMIP device, a model is proposed in this paper. The increases of both MWIR and LWIR responses with increasing measurement temperatures observed for the device are attributed to the increase of electrons in the QW ground state/wetting layer state resulted from the increase of one-photon absorption process with increasing temperatures.     

1024 × 1024 Format pixel co-located simultaneously readable dual-band QWIP focal plane

This paper reports the first demonstration of the megapixel-simultaneously-readable and pixel-co-registered dual-band quantum well infrared photodetector (QWIP) focal plane array (FPA). The dual-band QWIP device was developed by stacking two multi-quantum-well stacks tuned to absorb two different infrared wavelengths. The full width at half maximum (FWHM) of the mid-wave infrared (MWIR) band extends from 4.4 to 5.1 μm and the FWHM of a long-wave infrared (LWIR) band extends from 7.8 to 8.8 μm. Dual-band QWIP detector arrays were hybridized with custom fabricated direct injection read out integrated circuits (ROICs) using the indium bump hybridization technique. The initial dual-band megapixel QWIP FPAs were cooled to 70 K operating temperature. The preliminary data taken from the first megapixel QWIP FPA has shown system NEΔT of 27 and 40 mK for MWIR and LWIR bands, respectively.     

QWIP focal plane arrays on InP substrates for single and dual band thermal imagers

Alternative material systems on InP substrate provide certain advantages for mid-wavelength infrared (MWIR), long-wavelength infrared (LWIR) and dual band MWIR/LWIR quantum well infrared photodetector (QWIP) focal plane arrays (FPAs). While InP/InGaAs and InP/InGaAsP LWIR QWIPs provide much higher responsivity when compared to the AlGaAs/GaAs QWIPs, AlInAs/InGaAs system facilitates completely lattice matched single band MWIR and dual band MWIR/LWIR FPAs.We present an extensive review of the studies on InP based single and dual band QWIPs. While reviewing the characteristics of InP/InGaAs and InP/InGaAsP LWIR QWIPs at large format FPA level, we experimentally demonstrate that the cut-off wavelength of AlInAs/InGaAs QWIPs can be tuned in a sufficiently large range in the MWIR atmospheric window by only changing the quantum well (QW) width at the lattice matched composition. The cut-off wavelength can be shifted up to ～5.0 μm with a QW width of 22 Å in which case very broad spectral response (Δλ/λ_p = ～30%) and a reasonably high peak detectivity are achievable leading to a noise equivalent temperature difference as low as 14 mK (f/2) with 25 μm pitch in a 640 × 512 FPA. We also present the characteristics of InP based two-stack QWIPs with wavelengths properly tuned in the MWIR and LWIR bands for dual color detection. The results clearly demonstrate that InP based material systems display high potential for dual band MWIR/LWIR QWIP FPAs needed by third generation thermal imagers.     

共口径双通道红外扫描成像光学系统

对双波段红外扫描成像光学系统进行了研究,结合三次成像技术和100%冷光栏效率技术,设计了一个共口径双通道红外扫描成像光学系统。该系统包括前端共用的双反射系统、分束镜、准直镜组、扫描镜和成像镜组。光波经过双反射系统在主镜之后被分束镜分成中波红外通道（3 m～5 m）和长波红外通道（10 m～12 m）,经准直镜组及成像镜组会聚探测器上,实现中波红外系统与长波红外系统共口径同步成像。设计结果表明,长波红外系统传递函数在18 lp/mm处达到0.4以上,中波红外系统传递函数在18 lp/mm处达到0.78以上,满足实际应用的要求。     

Complementary barrier infrared detector (CBIRD) with double tunnel junction contact and quantum dot barrier infrared detector (QD-BIRD)

The InAs/GaSb type-II superlattice based complementary barrier infrared detector (CBIRD) has already demonstrated very good performance in long-wavelength infrared (LWIR) detection. In this work, we describe results on a modified CBIRD device that incorporates a double tunnel junction contact designed for robust device and focal plane array processing. The new device also exhibited reduced turn-on voltage. We also report results on the quantum dot barrier infrared detector (QD-BIRD). By incorporating self-assembled InSb quantum dots into the InAsSb absorber of the standard nBn detector structure, the QD-BIRD extend the detector cutoff wavelength from ∼4.2 μm to 6 μm, allowing the coverage of the mid-wavelength infrared (MWIR) transmission window. The device has been observed to show infrared response at 225 K.     

Towards dualband megapixel QWIP focal plane arrays

Mid-wavelength infrared (MWIR) and long-wavelength infrared (LWIR) 1024 × 1024 pixel quantum well infrared photodetector (QWIP) focal planes have been demonstrated with excellent imaging performance. The MWIR QWIP detector array has demonstrated a noise equivalent differential temperature (NEΔT) of 17 mK at a 95 K operating temperature with f/2.5 optics at 300 K background and the LWIR detector array has demonstrated a NEΔT of 13 mK at a 70 K operating temperature with the same optical and background conditions as the MWIR detector array after the subtraction of system noise. Both MWIR and LWIR focal planes have shown background limited performance (BLIP) at 90 K and 70 K operating temperatures respectively, with similar optical and background conditions. In addition, we have demonstrated MWIR and LWIR pixel co-registered simultaneously readable dualband QWIP focal plane arrays. In this paper, we will discuss the performance in terms of quantum efficiency, NEΔT, uniformity, operability, and modulation transfer functions of the 1024 × 1024 pixel arrays and the progress of dualband QWIP focal plane array development work.     

Infrared Absorber Leveling in Ultra-Wideband by Using Hybrid Plasmonic Structure

In this paper, an effective ultra-broadband absorber in long-wavelength infrared is achieved by a metal-insulator-metasurface (MIM) stacked structure. This absorber exhibits an average absorption of 90% at wavelengths ranging from 8 to 14 µm and a maximum absorption rate of up to 97.1%. It is found that the performance is achieved by three mode combinations. The ultra-broadband leveling absorber is to be polarization-independent due to its geometrical symmetry. The absorption property can be controlled by the parameters of the triangle unit. It has great potential in many applications such as infrared detection and imaging.     

含有双层衍射光学元件的中波/长波消热差光学系统的设计

建立了工作在一定入射角度范围内的多层衍射光学元件的复合带宽积分平均衍射效率的分析模型。基于衍射光学元件所具有的独特的消色差和消热差性质,设计了一个含有双层衍射光学元件的工作在(3.7~4.8) μm和(7.7~9.5) μm红外双波段光学系统。光学系统的焦距为200 mm,F#为2。采用像元数为320×256、间距为30 μm的制冷型探测器。该系统在空间频率17 lp/mm时,中、长波红外MTF分别高于0.66和0.54;最大RMS半径小于11.702 μm;波前像差小于0.191 7λ;最大离焦量小于焦深;在-55℃~71℃范围内实现了无热化设计。入射到衍射面上的角度为0°~5.19°,该双层衍射光学元件在中波和长波波段的复合带宽积分平均衍射效率分别为99.81%和97.36%。含有双层衍射光学元件的红外双波段光学系统结构简单,像质优良,可以广泛应用于军事探测系统中。     

NIR, MWIR and LWIR quantum well infrared photodetector using interband and intersubband transitions

This paper presents the design, fabrication and characterization of a QWIP photodetector capable of detecting simultaneously infrared radiation within near infrared (NIR), mid wavelength infrared (MWIR) and long wavelength infrared (LWIR). The NIR detection was achieved using interband transition while MWIR and LWIR were based on intersubband transition in the conduction band. The quantum well structure was designed using a computational tool developed to solve self-consistently the Schrödinger–Poisson equation with the help of the shooting method. Intersubband absorption in the sample was measured for the MWIR and LWIR using Fourier transform spectroscopy (FTIR) and the measured peak positions were found at 5.3 μm and 8.7 μm which agree well with the theoretical values obtained 5.0 μm and 9.0 μm for the two infrared bands which indicates the accuracy of the self-consistent model. The photodetectors were fabricated using a standard photolithography process with exposed middle contacts to allow separate bias and readout of signals from the three wavelength bands. The measured photoresponse gave three peaks at 0.84 μm, 5.0 μm and 8.5 μm wavelengths with approximately 0.5 A/W, 0.03 A/W and 0.13 A/W peak responsivities for NIR, MWIR and LWIR bands, respectively. This work demonstrates the possibility of detection of widely separated wavelength bands using interband and intersubband transitions in quantum wells.     

Ultra-broadband metamaterial absorber for infrared transparency window of the atmosphere

The broadband absorber at the wavelength range from 8 to 13 μm has attracted much attention because this range is exactly the infrared transparency window of the atmosphere. In this Letter, we propose a new structure of ultra-broadband absorber, which is composed of a periodic array of single-sized titanium (Ti) patches and a sandwich (Ti/SiO₂/Ti) plane. In the infrared transparency window of the atmosphere, the structure proposed can achieve nearly perfect absorption with the maximal absorptivity up to 99% for the wavelength range from 9.77 to 10.69 μm, and a high average absorptivity of 96.7% from 8 to 13 μm. The strongly localized electric field, at the interface of the top thin Ti film and the dielectric spacer of sandwich plane, leads to the ultra-broadband high absorption. In addition, this structure demonstrates the insensitivity of polarization and oblique angle. This metamaterial absorber with high performances in both bandwidth and absorptivity shows a promising prospect in applications such as thermal emitters, thermal coolers, and infrared sensors.     

极化控制的双波段宽带红外吸收器研究

红外吸收器在红外隐身、辐射制冷、红外探测、传感器等方面有重要的应用前景.一维光栅型吸收器由于其结构简单、易于加工的优势备受关注,然而其不足之处是频带很窄,且只对一种极化有效.本文提出了一种基于简单一维周期结构的双波段宽带吸收器,对横磁波和横电波都有效,且吸波频段随入射波的极化方式而改变.该结构的基本单元由八个梯度排列的子单元构成,每个子单元由两层金属-介质双层膜垂直层叠组成.全波仿真结果表明,在1.68—2μm波段,该结构对横磁波吸收超过90%,而对横电波吸收很小(小于6%);在3.8-3.9μm波段,该结构对横电波吸收超过90%,而对横磁波吸收很小(小于5%).另外,该结构具有宽角度吸收特性,当入射角增大到60°时仍然能够保持较高的吸收率和较宽的吸收频带.     

超薄柔性透射型超构材料吸收器

设计并加工了一种超薄柔性透射型吸收器,总体厚度为0.288 mm,可实现柔性弯曲,容易做到与曲面目标共形.该吸收器由三层结构组成,底层是金属光栅,中间为介质层,表面单元由两条平行放置的尺寸不同的金属线组成.仿真和实验结果表明,对横电波在5和7 GHz的吸收分别达到97.5%和96.0%,对横磁波在3.0—6.5 GHz都能保持90%以上的透射率.两个吸收频点可分别独立调节,增加了设计的灵活性.另外,当入射角增大到60°时,该吸收器的性能基本不受影响,表现出良好的广角特性.     

Effect of 300 K ambient background on C–V characteristics of HgCdTe MIS structures

We propose a simple model that describes the effect of 300 K ambient background on low-frequency (LF) capacitance–voltage characteristics of metal–insulator–semiconductor (MIS) structures based on HgCdTe materials. The materials used for both photoconductive (PC) and photovoltaic (PV) infrared detectors are investigated. We modify the solution of the one-dimensional Poisson’s equation and calculate LF capacitance including the effect of incident photon flux corresponding to the 300 K background. We identify the situations where this effect cannot be neglected. Based on our calculations, we find that in n-type materials used for medium-wave infrared (MWIR) PC devices, the minimum capacitance (C_min) can increase by as much as 4.4%, whereas this increase is about 9.6% for materials used for the long-wavelength infrared (LWIR) devices, for experimentally achievable minority carrier lifetimes and carrier concentrations. Similarly, in p-type materials used for LWIR PV devices, there is a very small increase of 1.5% in C_min, whereas there is no change in the MWIR region. The predictions of our model agree with experimental results and imply that the effect of 300 K ambient background radiation is very small compared to that of traps in p-type materials used for LWIR PV devices.     

An ultra-thin dual-band wide-angle polarization-insensitive metamaterial absorber with near-unity absorbance

In this paper, a dual-band metamaterial absorber (MMA) with wide-angle and polarization-insensitivity is proposed. The MMA consists of two copper layers with a layer of FR-4 between them. And its top layer consists of a cross-shaped resonator and a square ring resonator. The calculation result demonstrates that there are two distinct absorption peaks, whose absorptivity are 99.933% at 3.8441 GHz and 99.99% at 9.1094 GHz. And its thickness is only 1.34% of the wavelength of the lowest absorption frequency. The dual-band MMA shows polarization-insensitivity for normal incident wave and shows high absorptivity in a wide incident angle for both TE and TM polarization wave. In addition, we discuss the working mechanism. The influences of main parameters on the dual-band MMA's absorption are also analyzed. The proposed ultra-thin MMA has simple structure and high absorptivity, which has many potential applications, such as thermal radiometer, detection sensor, stealth technology.     

Extremely-broad band metamaterial absorber for solar energy harvesting based on star shaped resonator

A new metamaterial absorber (MA) is investigated and shown numerically for solar energy harvesting for future solar cell applications. The structure consists of two metals and one dielectric layer having different thicknesses. Owing to this combination, the structure exhibits plasmonic resonance characteristics. In the entire spectrum of visible frequency region, the obtained results show that investigated structure has perfect absorptivity which is above 91.8%. Proposed structure also has 99.87% absorption at 613.94 THz and 99% absorption between 548 and 669 THz. The proposed structure also shows both polarization and angle independency for the entire visible region. The MA based solar cell proposes high absorption with an upper ratio of 90% in the widest range of visible spectrum comparing to the studies in literature. Hence, the proposed metamaterial absorber solar cells can be used for invisibility in entire spectrum of visible light. The absorption characteristics of the solar absorber are also investigated for infrared and ultraviolet region. The enhancement of absorption of the structure will provide new type of sensors in these frequency ranges.     

基于超材料的偏振不敏感太赫兹宽带吸波体设计

本文设计了一种基于超材料的偏振不敏感太赫兹宽带吸波体.吸波体包含两层金属和一层中间介质,表面金属层每一个周期单元由五种尺寸接近的金属块按照相邻不同的规律排列成5×5的方形阵列.各种尺寸金属块分别产生单峰谐振吸收,五个谐振吸收峰相互靠近从而产生宽带吸收.通过研究吸波体表面电流和电场z分量分布情况可知,入射太赫兹能量的吸收主要是由y方向上电场引起的电偶极子振荡和z方向上磁场引起的磁极化产生,而且金属层的欧姆损耗起主要作用.仿真结果表明,吸波体吸收率在80%以上的带宽约为1.2 THz,最高吸收率可达98.7%,半峰全宽(FWHM)为1.6 THz,该宽带吸波体的厚度约为中心波长的二十分之一,对偏振方向不敏感,且能实现大角度吸收,在太赫兹频段的电磁隐身、测辐射热探测器以及宽带通信等领域有潜在的应用价值.     

A dual-band polarization insensitive metamaterial absorber with split ring resonator

A dual-band polarization insensitive absorber has been proposed . Unlike the previous dual band absorber composed of composite structures, only one square metal ring with a slit at the middle of each side can be used to achieve the dual-band absorption. The calculated results show two distinct absorption peaks of 0.96 at 10 GHz and 0.99 at 20 GHz. In addition, the positions of the two peaks are strongly influenced by the width of the slit (g). More importantly, the absorptions of the two peaks keep higher than 0.9 while g changing. The dual-band absorber may have many potential applications in scientific and technological areas because of its excellent absorption characteristics and concise structure.