双硫腙后处理诱导的钙钛矿膜二次结晶和钝化

有机-无机杂化钙钛矿较低的缺陷形成能和表面的悬挂键会导致其薄膜中产生铅缺陷。这些深能级缺陷会直接引起载流子的非辐射复合,导致有机-无机杂化钙钛矿光伏器件的界面接触和载流子传输效率变差,最终降低了器件的综合性能。采用双硫腙作为钙钛矿薄膜表面的二次结晶诱导剂和铅缺陷钝化剂,通过对钙钛矿膜进行后处理的方法实现对钙钛矿薄膜的形貌调控和缺陷钝化。进一步的研究结果表明,双硫腙通过与铅离子配位的方式有效地钝化了铅缺陷,并诱导了表面钙钛矿晶体的二次结晶,改善了薄膜质量,进而提高了器件的综合性能。     

A universal tactic of using Lewis-base polymer-CNTs composites as additives for high performance cm~2-sized and flexible perovskite solar cells

Lewis-base polymers have been widely utilized as additives to act as a template for the perovskite nucleation/crystal growth and passivate the under-coordinated Pb2+ sites.However,it is uncovered in this work that the polymer on the perovskite grain boundaries would significantly hinder the charge transport due to its low conductivity,which brings about free carrier recombination and photocurrent losses.To circumvent this issue while fully exploiting the benefits of polymers in passivating the trap states in perovskite,we incorporate highly conductive multiwall carbon nanotubes(CNTs) with Lewis-base polymers as coadditives in the perovskite film.Functionalizing the CNTs with-COOH group enables a selective hole-extraction and charge transport from perovskite to the hole transporting materials(HTM).By studying the charge transporting and recombination dynamics,we revealed the individual role of the polymer and CNTs in passivating the trap states and facilitating the charge transport,respectively.As a result,the perovskite solar cells(PSCs) with polymer-CNTs composites exhibit an impressive PCE of 21.7% for a small-area device(0.16 cm2) and 20.7% for a large-area device(1.0 cm2).Moreover,due to the superior mechanical flexibility of both polymer and CNTs,the polymer-CNTs composites incorporation in the perovskite film encourages the fabrication of flexible PSCs(f-PSCs) with an impressive PCE of 18.3%,and a strong mechanical durability by retaining 80%of the initial PCE after 1,000 times bending.In addition,we proved that the selection criteria of the polymers can be extended to other long-chain Lewis-base polymers,which opens new possibilities in design and synthesis of inexpensive material for this tactic towards the fabrication of high performance large-area PSCs and f-PSCs.     

Supramolecular Coordination of Pb2+ Defects in Hybrid Lead Halide Perovskite Films Using Truxene Derivatives as Lewis Base Interlayers

Truxene derivatives, due to their molecular structure and properties, are good candidates for the passivation of defects when deposited onto hybrid lead halide perovskite thin films. Moreover, their semiconductor characteristics can be tailored through the modification of their chemical structure, which allows-upon light irradiation- the interfacial charge transfer between the perovskite film and the truxene molecules. In this work, we analysed the use of the molecules as surface passivation agents and their use in complete functional solar cells. We observed that these molecules reduce the non-radiative carrier recombination dynamics in the perovskite thin film through the supramolecular complex formation between the Truxene molecule and the Pb²⁺ defects at the perovskite surface. Interestingly, this supramolecular complexation neither affect the carrier recombination kinetics nor the carriers collection but induced noticeable hysteresis on the photocurrent vs voltage curves of the solar cells under 1 sun illumination.     

Solid film versus solution-phase charge-recombination dynamics of exTTF-bridge-C60 dyads

The charge-recombination dynamics of two exTTF-C60 dyads (exTTF = 9,10-bis(1,3-dithiol-2-ylidene)-9,10-dihydroanthracene), observed after photoinduced charge separation, are compared in solution and in the solid state. The dyads differ only in the degree of conjugation of the bridge between the donor (exTTF) and the acceptor (C60) moieties. In solution, photoexcitation of the nonconjugated dyad C60-BN-exTTF (1) (BN = 1,1'-binaphthyl) shows slower charge-recombination dynamics compared with the conjugated dyad C60-TVB-exTTF (2) (TVB = bisthienylvinylenebenzene) (lifetimes of 24 and 0.6 micros, respectively), consistent with the expected stronger electronic coupling in the conjugated dyad. However, in solid films, the dynamics are remarkably different, with dyad 2 showing slower recombination dynamics than 1. For dyad 1, recombination dynamics for the solid films are observed to be tenfold faster than in solution, with this acceleration attributed to enhanced electronic coupling between the geminate radical pair in the solid film. In contrast, for dyad 2, the recombination dynamics in the solid film exhibit a lifetime of 7 micros, tenfold slower than that observed for this dyad in solution. These slow recombination dynamics are assigned to the dissociation of the initially formed geminate radical pair to free carriers. Subsequent trapping of the free carriers at film defects results in the observed slow recombination dynamics. It is thus apparent that consideration of solution-phase recombination data is of only limited value in predicting the solid-film behaviour. These results are discussed with reference to the development of organic solar cells based upon molecular donor-acceptor structures.     

Femtosecond Excitonic Relaxation Dynamics of Perovskite on Mesoporous Films of Al2O3 and NiO Nanoparticles

The excitonic relaxation dynamics of perovskite adsorbed on mesoporous thin films of Al₂O₃ and NiO upon excitation at 450 nm were investigated with femtosecond optical gating of photoluminescence (PL) via up‐conversion. The temporal profiles of emission observed in spectral region 670–810 nm were described satisfactorily with a composite consecutive kinetic model and three transient components representing one hot and two cold excitonic relaxations. All observed relaxation dynamics depend on the emission wavelength, showing a systematic time–amplitude correlation for all three components. When the NiO film was employed, we observed an extent of relaxation proceeding through the non‐emissive surface state larger than through the direct electronic relaxation channel, which quenches the PL intensity more effectively than on the Al₂O₃ film. We conclude that perovskite is an effective hole carrier in a p‐type electrode for NiO‐based perovskite solar cells showing great performance.     

Improved Performance of All-Inorganic Perovskite Light-emitting Diodes via Nanostructured Stamp Imprinting

Halide perovskites are emerging emitters with excellent optoelectronic properties. Contrary to the large grain fabrication goal in perovskite solar cells, perovskite light-emitting diodes (PeLEDs) based on small grain enable efficient radiative recombination because of relatively higher charge carrier densities due to spatial confinement. However, achieving small-sized grain growth with superior crystal quality and film morphology remains a challenge. In this work, we demonstrated a nanostructured stamp thermal imprinting strategy to boost the surface coverage and improve the crystalline quality of CsPbBr₃ film, particularly confine the grain size, leading to the improvement of luminance and efficiency of PeLEDs. We improved the thermal imprinting process utilizing the nanostructured stamp to selectively manipulate the nucleation and growth in the nanoscale region and acquire small-sized grain accompanied by improved crystal quality and surface morphology of the film. By optimizing the imprinting pressure and the period of the nanostructures, appropriate grain size, high surface coverage, small surface roughness and improved crystallization could be achieved synchronously. Finally, the maximum luminance and efficiency of PeLEDs achieved by nanostructured stamp imprinting with a period of 320 nm are 67600 cd/m² and 16.36 cd/A, respectively. This corresponds to improvements of 123 % in luminance and 100 % in efficiency, compared to that of PeLEDs without the imprinting.     

Extending Carrier Lifetimes in Lead Halide Perovskites with Alkali Metals by Passivating and Eliminating Halide Interstitial Defects

Defects, such as halide interstitials, act as charge recombination centers, induce degradation of halide perovskites, and create major obstacles to applications of these materials. Alkali metal dopants greatly improve perovskite performance. Using ab initio nonadiabatic molecular dynamics, it is demonstrated that alkalis bring favorable effects. The formation energy of halide interstitials increases by up to a factor of four in the presence of alkali dopants, and therefore, defect concentration decreases. When defects are present, alkali metals strongly bind to them. Halide interstitials introduce mid‐gap states that rapidly trap charge carriers. Alkalis eliminate the trap states, helping to maintain high current density. Further to charge trapping, the interstitials accelerate charge recombination. By passivating the interstitials, alkalis make carrier lifetimes up to seven times longer than in defect‐free perovskites and up to thirty times longer than in defective perovskites.     

Ultrafast exciton dissociation followed by nongeminate charge recombination in PCDTBT:PCBM photovoltaic blends

The precise mechanism and dynamics of charge generation and recombination in bulk heterojunction polymer:fullerene blend films typically used in organic photovoltaic devices have been intensively studied by many research groups, but nonetheless remain debated. In particular the role of interfacial charge-transfer (CT) states in the generation of free charge carriers, an important step for the understanding of device function, is still under active discussion. In this article we present direct optical probes of the exciton dynamics in pristine films of a prototypic polycarbazole-based photovoltaic donor polymer, namely poly[N-11'-henicosanyl-2,7-carbazole-alt-5,5-(4',7'-di-2-thienyl-2',1',3'-benzothiadiazole)] (PCDTBT), as well as the charge generation and recombination dynamics in as-cast and annealed photovoltaic blend films using methanofullerene (PC(61)BM) as electron acceptor. In contrast to earlier studies we use broadband (500-1100 nm) transient absorption spectroscopy including the previously unobserved but very important time range between 2 ns and 1 ms, which allows us not only to observe the entire charge carrier recombination dynamics but also to quantify the existing decay channels. We determine that ultrafast exciton dissociation occurs in blends and leads to two separate pools of products, namely Coulombically bound charge-transfer (CT) states and unbound (free) charge carriers. The recombination dynamics are analyzed within the framework of a previously reported model for poly(3-hexylthiophene):PCBM (Howard, I. A. J. Am. Chem. Soc. 2010, 132, 14866) based on concomitant geminate recombination of CT states and nongeminate recombination of free charge carriers. The results reveal that only ~11% of the initial photoexcitations generate interfacial CT states that recombine exclusively by fast nanosecond geminate recombination and thus do not contribute to the photocurrent, whereas ~89% of excitons create free charge carriers on an ultrafast time scale that then contribute to the extracted photocurrent. Despite the high yield of free charges the power conversion efficiency of devices remains moderate at about 3.0%. This is largely a consequence of the low fill factor of devices. We relate the low fill factor to significant energetic disorder present in the pristine polymer and in the polymer:fullerene blends. In the former we observed a significant spectral relaxation of exciton emission (fluorescence) and in the latter of the polaron-induced ground-state bleaching, implying that the density of states (DOS) for both excitons and charge carriers is significantly broadened by energetic disorder in pristine PCDTBT and in its blend with PCBM. This disorder leads to charge trapping in solar cells, which in turn causes higher carrier concentrations and more significant nongeminate recombination. The nongeminate recombination has a significant impact on the IV curves of devices, namely its competition with charge carrier extraction causes a stronger bias dependence of the photocurrent of devices, in turn leading to the poor device fill factor. In addition our results demonstrate the importance of ultrafast free carrier generation and suppression of interfacial CT-state formation and question the applicability of the often used Braun-Onsager model to describe the bias dependence of the photocurrent in polymer:fullerene organic photovoltaic devices.     

When Aggregation-Induced Emission Meets Perovskites: Efficient Defect-Passivation and Charge-Transfer for Ambient Fabrication of Perovskite Solar Cells

The intrinsic defects in perovskite film can serve as non-radiative recombination center to limit the performance and stability of metal halide perovskite solar cells (PSCs). The additive engineering in perovskite film is always applied to produce high-efficiency PSCs in recent years. Here, a typical donor-acceptor (D−A) structured aggregation-induced emission (AIE) molecule tetraphenylethene-2-dicyano-methylene-3-cyano-4,5,5-trimethyl-2,5-dihydrofuran (TPE-TCF) was introduced into perovskite film. The D−A structure of TPE-TCF molecule provided additional charge transfer channels, contributing to transporting electron of TPE-TCF-based device. The cyano (C≡N) of TPE-TCF can interact with the uncoordinated Pb to from a relatively stable intermediate, PbI₂⋅TPE-TCF, resulting in the slower crystal growth, reduced the defects at the grain boundaries and suppressed carrier recombination. As a consequence, the power conversion efficiency (PCE) of TPE-TCF-modified PSCs achieved a remarkably enhanced from 15.63 to 19.66 % with negligible hysteresis, which was prominent in methylammonium lead iodide-based devices fabricated under ambient condition. Furthermore, the PSCs modified by AIE molecule possessed an outstanding stability and maintain about 86 % of the initial PCE after 300 h storage in air at 25–35 °C with a high relative humidity (RH) of ≈85 %. This work suggests that incorporating AIE molecule into perovskite is a promising strategy for facilitating high-performance PSCs commercialization in ambient environment without glovebox.     

Soft Lattice and Defect Covalency Rationalize Tolerance of β‐CsPbI3 Perovskite Solar Cells to Native Defects

Although all‐inorganic metal halide perovskites (MHPs) have shown tremendous improvement, they are still inferior to the hybrid organic–inorganic MHPs in efficiency. Recently, a conceptually new β‐CsPbI₃ perovskite reached 18.4 % efficiency combined with good thermodynamic stability at ambient conditions. We use ab initio non‐adiabatic molecular dynamics to show that native point defects in β‐CsPbI₃ are generally benign for nonradiative charge recombination, regardless of whether they introduce shallow or deep trap states. These results indicate that MHPs do not follow the simple models used to explain defect‐mediated charge recombination in the conventional semiconductors. The strong tolerance is due to the softness of the perovskite lattice, which permits separation of electrons and holes upon defect formation, and only allows carriers to couple to the low‐frequency vibrations. Both factors decrease notably the non‐adiabatic coupling and slow down the dissipation of energy to heat.     

Soft Lattice and Defect Covalency Rationalize Tolerance of β-CsPbI3 Perovskite Solar Cells to Native Defects

Although all-inorganic metal halide perovskites (MHPs) have shown tremendous improvement, they are still inferior to the hybrid organic–inorganic MHPs in efficiency. Recently, a conceptually new β-CsPbI₃ perovskite reached 18.4 % efficiency combined with good thermodynamic stability at ambient conditions. We use ab initio non-adiabatic molecular dynamics to show that native point defects in β-CsPbI₃ are generally benign for nonradiative charge recombination, regardless of whether they introduce shallow or deep trap states. These results indicate that MHPs do not follow the simple models used to explain defect-mediated charge recombination in the conventional semiconductors. The strong tolerance is due to the softness of the perovskite lattice, which permits separation of electrons and holes upon defect formation, and only allows carriers to couple to the low-frequency vibrations. Both factors decrease notably the non-adiabatic coupling and slow down the dissipation of energy to heat.     

Photophysics, photoelectrical properties and photoconductivity relaxation dynamics of quantum-sized bismuth(III) sulfide thin films

Electrical and photoelectrical properties (including both the stationary photoresponse and the photocarriers' relaxation dynamics) of nanocrystalline semiconducting bismuth(III) sulfide thin films were investigated. The experimental design of photoelectrical properties was achieved by controlling the chemistry of the deposition process (varying the reagent concentration in the reaction system) and also by physical means (controlling the crystal dimensions by post-deposition annealing). The band gap energy of thin films characterized by most pronounced photoelectrical properties was calculated, on the basis of measured photoconductivity spectral response curves, by several approaches. All of the obtained values are in very good agreement with the corresponding ones obtained from optical spectroscopy data within the framework of parabolic approximation for dispersion relation. On the basis of measured temperature dependence of dark electrical resistivity of nanocrystalline bismuth(III) sulfide films, the thermal band gap energy and the ionization energy of the impurity level (of donor type) were calculated. The corresponding values are 1.50 and 0.42 eV. Dynamics of non-equilibrium charge carriers' relaxation processes was studied with the oscilloscopic method. By analysis of the photoconductivity decay kinetics data it is found that recombination of non-equilibrium charge carriers is carried out according to the linear mechanism. The calculated relaxation time of photoexcited charge carriers is 1.58 ms, the relaxation processes occurring via local trapping centers. Recombination processes occurring via a single-type trapping center can be described within the framework of the Schockley-Read model. The practically linear regime detected in the measured lux-ampere characteristics of the studied films (Δσ∼Φ^0.98) indicate as well a linear recombination mechanism of the photoexcited charge carriers.     

Limiting Perovskite Solar Cell Performance by Heterogeneous Carrier Extraction

Although the power conversion efficiency of perovskite solar cells has improved rapidly, a rational path for further improvement remains unclear. The effect of large morphological heterogeneity of polycrystalline perovskite films on their device performance by photoluminescence (PL) microscopy has now been studied. Contrary to the common belief on the deleterious effect of morphological heterogeneity on carrier lifetimes and diffusivities, in neat CH₃NH₃PbI₃(Cl) polycrystalline perovskite films, the local (intra‐grain) carrier diffusivities in different grains are all surprisingly high (1.5 to 3.3 cm² s^?1; comparable to bulk single‐crystals), and the local carrier lifetimes are long (ca. 200 ns) and surprisingly homogenous among grains, and uniform across grain boundary and interior. However, there is a large heterogeneity of carrier extraction efficiency at the perovskite grain–electrode interface. Improving homogeneity at perovskite grain–electrode contacts is thus a promising direction for improving the performance of perovskite thin‐film solar cells.     

甲胺铅碘前驱体薄膜放置过程中物质结构演变及对后续钙钛矿薄膜的影响

系统研究了甲胺铅碘(MAPbI_3)前驱体薄膜在室温大气中放置过程的物质结构变化过程,发现甲胺铅碘前驱体进一步生成了更多的MAPbI_3钙钛矿,大约220 min后MAPbI_3钙钛矿不再增加而且仍有前驱体。此外还分析了这种结构演变对后续钙钛矿薄膜热退火结果的影响,发现放置后的甲胺铅碘前驱体薄膜退火过程中的X射线衍射强度和紫外-可见吸收均比新制备的薄膜的低,而且通过原子力表面形貌图的对比发现,放置后的薄膜热退火后的薄膜晶体尺寸远小于新制备的甲胺铅碘前驱体薄膜热退火后的晶体尺寸,放置后的薄膜晶体尺寸约为0.2μm,新制备的薄膜晶体尺寸约为1.1μm。主要原因在于:甲胺铅碘前驱体薄膜由于在室温大气中放置过程中多生成了部分甲胺铅碘(MAPbI_3),因此晶体成核数量较多,晶粒数量增加,晶体存在较多缺陷,薄膜结晶度低,所以退火时X射线衍射强度和光谱强度较低,同时晶粒尺寸变小。研究为探讨甲胺铅碘钙钛矿生成机理提供了新的思路和方向,属于甲胺铅碘钙钛矿薄膜性质的基础性研究,对实际生产和工业应用有一定指导意义。     

Alkyl-Chain-Regulated Charge Transfer in Fluorescent Inorganic CsPbBr3 Perovskite Solar Cells

Improved charge extraction and wide spectral absorption promote power conversion efficiency of perovskite solar cells (PSCs). The state-of-the-art carbon-based CsPbBr₃ PSCs have an inferior power output capacity because of the large optical band gap of the perovskite film and the high energy barrier at perovskite/carbon interface. Herein, we use alkyl-chain regulated quantum dots as hole-conductors to reduce charge recombination. By precisely controlling alkyl-chain length of ligands, a balance between the surface dipole induced charge coulomb repulsive force and quantum tunneling distance is achieved to maximize charge extraction. A fluorescent carbon electrode is used as a cathode to harvest the unabsorbed incident light and to emit fluorescent light at 516 nm for re-absorption by the perovskite film. The optimized PSC free of encapsulation achieves a maximum power conversion efficiency up to 10.85 % with nearly unchanged photovoltaic performances under 80 %RH, 80 °C, or light irradiation in air.     

Lithium Polystyrene Sulfonate as a Hole Transport Material in Inverted Perovskite Solar Cells

Despite the exceptional efficiency of perovskite solar cells (PSCs), further improvements can be made to bring their power conversion efficiencies (PCE) closer to the Shockley-Queisser limit, while the development of cost-effective strategies to produce high-performance devices are needed for them to reach their potential as a widespread energy source. In this context, there is a need to improve existing charge transport layers (CTLs) or introduce new CTLs. In this contribution, we introduced a new polyelectrolyte (lithium poly(styrene sulfonate (PSS))) (Li:PSS) polyelectrolyte as an HTL in inverted PSCs, where Li⁺ can act as a counter ion for the PSS backbone. The negative charge on the PSS backbone can stabilize the presence of p-type carriers and p-doping at the anode. Simple Li:PSS performed poorly due to poor surface coverage and voids existence in perovskite film as well as low conductivity. PEDOT:PSS was added to increase the conductivity to the simple Li:PSS solution before its use which also resulted in lower performance. Furthermore, a bilayer of PEDOT:PSS and Li:PSS was employed, which outperformed simple PEDOT:PSS due to high quality of perovskite film with large grain size also the large electron injection barrier (ϕ_e) impeded back diffusion of electrons towards anode. As a consequence, devices employing PEDOT:PSS / Li:PSS bilayers gave the highest PCE of 18.64%.     

Alkyl‐Chain‐Regulated Charge Transfer in Fluorescent Inorganic CsPbBr3 Perovskite Solar Cells

Improved charge extraction and wide spectral absorption promote power conversion efficiency of perovskite solar cells (PSCs). The state‐of‐the‐art carbon‐based CsPbBr₃ PSCs have an inferior power output capacity because of the large optical band gap of the perovskite film and the high energy barrier at perovskite/carbon interface. Herein, we use alkyl‐chain regulated quantum dots as hole‐conductors to reduce charge recombination. By precisely controlling alkyl‐chain length of ligands, a balance between the surface dipole induced charge coulomb repulsive force and quantum tunneling distance is achieved to maximize charge extraction. A fluorescent carbon electrode is used as a cathode to harvest the unabsorbed incident light and to emit fluorescent light at 516 nm for re‐absorption by the perovskite film. The optimized PSC free of encapsulation achieves a maximum power conversion efficiency up to 10.85 % with nearly unchanged photovoltaic performances under 80 %RH, 80 °C, or light irradiation in air.     

Chemical vapor deposition growth of phase-selective inorganic lead halide perovskite films for sensitive photodetectors

Inorganic lead halide perovskites are attractive optoelectronic materials owing to their relative stability compared to organic cation alternatives.The chemical vapor deposition(CVD) method offers potential for high quality perovskite film growth.The deposition temperature is a critical parameter determining the film quality owing to the melting difference between the precursors.Here,perovskite films were deposited by the CVD method at various temperatures between 500-800℃.The perovskite phase converts from CsPb₂Br₅ to CsPbBr₃ gradually as the deposition temperature is increased.The grain size of the perovskite films also increases with temperature.The phase transition mechanism was clarified.The photoexcited state dynamics were investigated by spatially and temporally resolved fluorescence measurements.The perovskite film deposited under 750℃ condition is of the CsPbBr₃ phase,showing low trap-state density and large crystalline grain size.A photodetector based on perovskite films shows high photocurrent and an on/off ratio of ~2.5×10⁴.     

平板结构高效钙钛矿太阳能电池的旋涂溶液溶剂工程

自2009年首次应用于太阳能电池中以来,有机铅卤化物钙钛矿材料得到了极大关注.据文献报道,有机铅卤化物钙钛矿材料在不同结构的太阳能电池中都得到了应用,其中与有机太阳能电池类似的平板结构钙钛矿具有结构简单、制备容易等优点,非常适合用于柔性电池和多节电池等各种应用.在平板结构的太阳能电池中,制备高质量的钙钛矿薄膜至关重要.真空热蒸镀法虽然可以制备厚度均匀的钙钛矿薄膜,获得高的器件性能,但是设备成本较高,不利于大规模生产.而在溶液法中,早期的一步旋涂法和两步法由于没有多孔金属氧化物的支撑,很难制备均匀的钙钛矿平板薄膜;而气相辅助的两步法虽然制备的薄膜比较均匀,但反应时间却比较长.程一兵研究组采用在旋涂N,N-二甲基甲酰胺(DMF)溶液时滴加氯苯使钙钛矿快速析出结晶的方法,制备了高质量的均匀的CH3NH3PbI3薄膜. Seok研究组采用1,4-丁内酯(GBL)和二甲基亚砜(DMSO)的混和溶剂,在旋涂时滴加甲苯的方法,在多孔二氧化钛上也制得了均匀的CH3NH3PbI3薄膜,取得了很高转化效率(16.7%),但缺少对不同溶剂比例的细致研究,另外,也没有对平板结构电池性能进行研究.
　　本文采用DMF-DMSO和GBL-DMSO作为混合溶剂在二氧化钛致密层上旋涂制备了平板结构的钙钛矿薄膜,并且对混合溶剂的比例对器件性能的影响进行了详细的考察和优化.当纯DMF或纯GBL作为旋涂溶剂时,得到的CH3NH3PbI3钙钛矿薄膜含有大量不连续的晶粒,表面的覆盖度很差,对入射光的吸收远弱于连续均匀的薄膜.而且XRD结果表明,纯DMF或纯GBL作为旋涂溶剂的薄膜残留有前驱体的杂质,对器件性能非常不利.而采用DMSO作为旋涂溶剂时,制得的薄膜表面则比较均匀,几乎达到100%的覆盖.这主要是由于在旋涂溶液中形成了PbI2-CH3NH3I-DMSO的中间相,这样可以避免纯DMF或纯GBL溶剂蒸发时PbI2和CH3NH3I的剧烈反应,因此退火后制得的CH3NH3PbI3薄膜非常均匀.然而由于纯DMSO的高粘度和低挥发速度,并不是非常适合作为旋涂溶剂,因此我们将DMF和GBL加入到DMSO中形成混合溶剂来考察对制备的钙钛矿薄膜质量和器件性能的影响.扫描电镜结果表明,加入20%~40%体积分数的DMF时,形成的薄膜表面非常均匀而且晶粒尺寸很大,达到微米级别,这样有利于减少晶界处的复合,提高电池性能.继续增加DMF比例会导致晶粒减小,晶界和孔隙增多,薄膜表面也更加粗糙.而加入GBL时得到的晶粒要远小于加入DMF时的尺寸,并且随着GBL比例的增加,薄膜的表面变得更加粗糙,孔隙明显增多,严重影响电池性能. XRD结果表明,纯DMSO和混合溶剂制得的薄膜都没有前驱体的残留.紫外可见吸收光谱表明,随着DMF比例的增加,吸收逐渐增强;而随着GBL比例的增加,吸收逐渐减弱.这主要由于不同比例溶剂制得的薄膜厚度有所差异造成的.
　　由相关的薄膜制备的平板结构太阳能电池I-V测试表明：当使用DMF-DMSO混合溶剂时,随着DMF比例由0%增至40%,短路电流和开路电压逐渐增加,填充因子略微减小,总体上导致光电转化效率逐渐增大.随着DMF继续增多,开路电压和填充因子的减小导致转化效率逐渐降低.而当使用GBL-DMSO混合溶剂时,主要受到短路电流的影响,电池的效率明显低于含DMF的混合溶剂的情况,而且随着GBL增多,电池效率逐渐降低.电池的最高转化效率达到了16.5%,最高功率点下固定电压扫描得到的稳态效率也达到了14.4%,高于报道中采用类似结构的电池的性能.由于在整个电池制备过程中,整个实验过程都低于100°C,该方法非常适合未来推广到柔性太阳能电池和多节太阳能电池上.