Electric-field and magnetic-field effects on electronic tunneling through magnetic-barrier nanostructures

We have theoretically investigated electric-field and magnetic-field effects on electronic transport properties in nanostructures consisting of realistic magnetic barriers created by lithographic patterning of ferromagnetic or superconducting films. The results indicate that the characteristics of transmission resonance are determined not only by the magnetic configuration and the incident wave vector but also strongly by the applied electric and magnetic fields. It is shown that transmission resonance shifts towards the low-energy region by applying the electric field, and that with increasing the electric field transmission resonance is suppressed for the entire incident wave vector in the magnetic nanostructures with antisymmetric magnetic profile, while for the magnetic nanostructures with symmetric magnetic profile transmission resonance is enhanced for certain incident wave vector. It is also shown that both transmission and conductance shift towards high-energy direction and are greatly suppressed with the increase of the external magnetic field.Received: 20 May 2003, Published online: 11 August 2003PACS: 73.40.Gk Tunneling - 73.23.-b Electronic transport in mesoscopic system - 75.70.Cn Interfacial magnetic properties (multilayers, superlattices)     

Growth and properties of epitaxial rare-earth scandate thin films

Epitaxial rare-earth scandate thin films of 100–1500 nm in thickness have been prepared by pulsed laser deposition on SrTiO₃(100) and MgO(100) substrates. Stoichiometry and crystallinity were investigated by Rutherford backscattering spectrometry/channelling (RBS/C), transmission electron microscopy, and X-ray diffraction. Electrical measurements on microstructured capacitors with a SrRuO₃ bottom electrode and Au top contacts reveal dielectric constants of 20 to 27, leakage currents of 0.85 to 6 μA/cm² at 250 kV/cm, and breakdown fields of 0.6 to 1.2 MV/cm. The optical bandgaps of the films range from 5.5 to 6 eV. The results substantiate the high potential of rare-earth scandates as alternative gate oxides. PACS 73.61.Ng; 73.40.Rw; 77.22.Ch; 77.55.+f; 78.40.Ha     

Experimental studies of extraordinary light transmission through periodic arrays of subwavelength square and rectangular holes in metal films

We fabricate a series of periodic arrays of subwavelength square and rectangular air holes on gold films, and measure the transmission spectra of these metallic nanostructures. By changing some geometrical and physical parameters, such as array period, air hole size and shape, and the incident light polarization, we verify that both global surface plasmon resonance and localized waveguide mode resonance are influential on enhancing the transmission of light through nanostructured metal films. These two resonances induce different behaviours of transmission peak shift. The transmission through the rectangular air-hole structures exhibits an obvious polarization effect dependent on the morphology. Numerical simulations are also made by a plane-wave transfer-matrix method and in good consistency with the experimental results.     

Thickness dependent formation and properties of GdSi2/Si(100) interfaces

Epitaxial and polycrystalline orthorhombic GdSi₂ films were grown on Si(100) substrates by solid phase reaction between Si and Gd films at different thicknesses of the Gd film . The most important property of these GdSi₂/Si interfaces was defect formation. This was investigated by studying the properties of the Schottky barriers by means of current voltage and capacitance–voltage characteristics, deep level transient spectroscopy by double crystal X-ray diffractometry, and transmission electron microscopy. Epitaxial growth of the silicide layer ensured a relatively low interface defect density (about 10¹⁰ cm^-2), while the non-epitaxial growth induced defects of a much higher density (about 10¹² cm^-2). The defects generated during the silicide formation are located within a depth of about 10 nm from the GdSi₂/Si interface. PACS 68.55.-a; 73.40.-c; 81.15-zThis revised version was published in March 2005. References 10-17 were added in the online version (pdf file).     

Dielectrophoretically aligned GaN nanowire rectifiers

We demonstrate GaN nanowire (NW) current rectifiers which were formed by assembling n-GaN nanowires on a patterned p-Si substrate by means of alternating current (ac) dielectrophoresis. The dielectrophoresis was accomplished at a frequency of 10 kHz with three different ac bias voltages (5, 10, and 15 V_p–p), indicating that the number of aligned GaN nanowires increased with increasing ac bias voltage. The n-GaN NW/p-Si diodes showed well-defined current rectifying behavior with a forward voltage drop of 1.2–1.5 V at a current density of 200 A/cm². We observed that the GaN NW diode functioned well as a half-wave rectifier. PACS 71.20.Nr; 73.40.Cg; 73.40.Ei; 73.40.Kp     

Investigating the correlation between crystalline and magnetic nanostructures in Co-Sm films by means of electron microscopy

We visualize nanocrystalline and magnetic structures in thin films of Co-Sm (fabricated by means of ion resputtering) using transmission electron microscopy and Lorentz microscopy. Filters based upon Gauss wavelets were used to decompose images of nanostructures with spatial periods ranging from 0.5 nm to 390 nm. It was found by wavelet filtration of images of the magnetic structure that nanostructures with the above periods determine the boundaries of the magnetic structure in thin films of Sm-Co.     

Pulsed laser deposited ZrAlON films for high-k gate dielectric applications

ZrAlON films were fabricated using the reactive ablation of a ceramic ZrAlO target in N₂ ambient by pulsed laser deposition (PLD) technique. ZrAlON films were deposited directly on n-Si(100) substrates and Pt coated silicon substrates, respectively, at 500 °C in a 20 Pa N₂ ambient, and rapid thermal annealed (RTA) in N₂ ambient at 1000 °C for 1 min. Cross sectional high-resolution transmission electron microscopy (HRTEM) images clearly show that the ZrAlON/Si interface is atomically sharp without an interfacial layer, and the films are completely amorphous. The electron diffraction pattern of TEM also indicates the amorphous structure of the RTA ZrAlON film. X-ray photoelectron spectroscopy (XPS) measurement was performed to confirm the effective incorporation of nitrogen with a content of about 6 at. %, and to reveal the N–O bonding in ZrAlON films. The dielectric constant of amorphous ZrAlON was determined to be about 18.2 which is more than 16.8 for ZrAlO by measuring the Pt/films/Pt capacitors. Capacitance–voltage (C–V) measurements show that a small equivalent oxide thickness (EOT) of 1.03 nm for 4 nm ZrAlON film on the n-Si substrate with a leakage current of 28.7 mA/cm² at 1 V gate voltage was obtained. PACS 77.55.+f; 81.15.Fg; 73.40.Qv     

High quality,high-<Emphasis Type="Italic">k</Emphasis> gate dielectric: amorphous LaAlO<Subscript>3</Subscript> thin films grown on Si(100) without Si interfacial layer

High-k dielectric amorphous LaAlO₃ thin films have been grown on n-type Si(100) substrates by laser molecular beam epitaxy. The interfacial characteristics of the LaAlO₃ films on Si were measured by high-resolution transmission electron micrography and X-ray photoemission spectroscopy. A sharp interface without a silica inter-layer between the LaAlO₃ film and Si substrate was observed. Atomic force microscopy measurements indicated that the root-mean-square surface roughness within a 2m×2m area of the LAO films was 0.12 nm. The flatband voltage and fixed charge density of the 8 nm thickness LaAlO₃ films were about 0.355 V and 1.8×10¹²/cm², respectively. The leakage currents of the LaAlO₃/Si(100) samples with different film thicknesses of 5, 8 and 12 nm were 0.45, 0.23 and 0.05 mA/cm², respectively, at a +1 V dc bias voltage. LaAlO₃ appears to be one of the most promising high dielectric constant materials for use in future ultra large scale integrated devices. PACS 77.55+f; 77.84.Bw; 73.40.Qv     

Electron field emission from amorphous carbon with N-doped nanostructures pyrolyzed from polyaniline

Carbon-based materials have been of great interest due to their potential application in cold cathodes for field emission displays and other vacuum microelectronic devices. Pyrolyzed polyaniline (PPANI) with N-doped nanostructures was prepared by pyrolysis of polyaniline at high temperature of 900 °C. The morphologies and microstructures were investigated by scanning electron microscopy, transmission electron microscopy, AFM, Raman spectroscopy, and X-ray photoelectron spectroscopy. It was found that there were sp²C-N and sp³C-N bonds between the nitrogen and the carbon atoms in the nanostructures of the PPANI obtained. The electron field emission investigations showed that the turn-on field and effective work function ?_e of PPANI were 1.7 V/μm and 0.010 eV which were lower than N-doped amorphous carbon films obtained by other methods.     

Control over the wettability of amorphous carbon films in a large range from hydrophilicity to super-hydrophobicity

Control of wettability is of significance in industry as well as our daily live. Amorphous carbon (a-C) films with nanostructured surface were deposited on silicon and glass substrates at different substrate temperatures through a magnetron sputtering technique. The microstructures of the a-C films were studied by SEM and XPS, which indicate that the surface of the a-C films deposited at room temperature are smooth due to their much dense sp³-bonded carbon, while they turn to be more porous graphite-like structure with elevated deposition temperature. The water contact angle (CA) measurements show that these pure carbon films exhibit different wettability, ranging from hydrophilicity with CA less than 40° to super-hydrophobicity with CA of 152°, which reveal that the surface wettability of a-C films can be controlled well by using nanostructures with various geometrical and carbon state features. The graphite-like carbon film deposited at 400 °C without any modification exhibits super-hydrophobic properties, due to the combining microstructures of spheres with nanostructures of protuberances and interstitials. It may have great significance on the study of wettability and relevant applications.     

Spectroscopy of homogeneous deuterated hydrocarbon films redeposited from a T-10 tokamak plasma discharge

Homogeneous deuterated hydrocarbon films redeposited from a deuterium plasma discharge inside the T-10 tokamak vacuum chamber are studied using photoluminescence methods; EXAFS, EPR, and IR spectroscopies; and temperature measurements. The photoluminescence excitation spectra of sp ³-sp ² nanostructures of tokamak films are compared with those of sp ² nanostructures of C60 fullerite films. The effect of defect states on photoluminescence and its temperature quenching is discussed. It is concluded that the model of temperature luminescence quenching for homogeneous deuterated tokamak films is similar to that for amorphous a-C:H films.     

Initial stages of misfit stress relaxation through the formation of prismatic dislocation loops in GaN–Ga<Subscript>2</Subscript>O<Subscript>3</Subscript> composite nanostructures

The initial stages of misfit stress relaxation through the formation of rectangular prismatic dislocation loops in model composite nanostructures have been considered. The nanostructures are either spherical or cylindrical GaN shells grown on solid or hollow β-Ga²O₃ cores or planar thin GaN films on β-Ga²O₃ substrates. Three characteristic configurations of prismatic dislocation loops, namely, square loops, loops elongated along the GaN/Ga²O₃ interface, and loops elongated along the normal to the GaN/Ga²O₃ interface, have been analyzed. The generation of prismatic dislocation loops from the interface into the bulk of the GaN shell (film), from the free surface into the GaN shell (film), and from the interface into the β-Ga²O₃ core (substrate) has been investigated. It has been shown that, for the minimum known estimate of the lattice misfit (2.6%) in some of the considered nanostructures, no any prismatic dislocation loops can be generated. If the generation of prismatic dislocation loops is possible, then in all the considered nanostructures, the energetically more favorable case corresponds to prismatic dislocation loops elongated along the GaN/Ga²O₃ interfaces, and the more preferred generation of prismatic dislocation loops occurs from the GaN free surface. The GaN/Ga²O₃ nanostructures that are the most and least resistant to the formation of prismatic dislocation loops have been determined. It has been found that, among the considered nanostructures, the planar two-layer GaN/Ga²O₃ plate is the most resistant to the generation of prismatic dislocation loops, which is explained by the action of an alternative mechanism for the relaxation of misfit stresses due to the bending of the plate. The least resistant nanostructure is the planar three-layer GaN/Ga²O₃/GaN plate, in which GaN films have an identical thickness and which itself as a whole does not undergo bending. The critical thicknesses of the GaN shells (films), which must be exceeded to ensure the growth of these shells (films) so as to avoid the formation of prismatic dislocation loops, have been calculated for all the studied nanostructures and three known estimates of the lattice misfits (2.6, 4.7, and 10.1%).     

Characterization of silver nanomeshes generated by laser-induced photoreduction from a solid silver nitrate thin film

This study characterizes electrical properties of silver thin films with meshed nanostructures fabricated through the photoreduction of solid silver nitrate thin films using excimer laser irradiation. Variations of mesh morphology as functions of laser irradiation time and fluences are examined; and the relationship between the film’s electrical resistance and mesh structure are addressed. The course of nanomesh formation can be separated into two main phases: precipitation of silver nanoparticles as a result of photoreduction; and, formation of mesh nanostructures through the photothermal effect. The resulting electrical resistance depends strongly on the mesh nanostructure. With a suitable arrangement of laser fluence and irradiation time, silver thin films with well interconnected nanomeshes can be fabricated. Results show that silver thin films with low electrical resistivity, down to 8.5×10⁻⁸ Ω m, are easily obtainable. The laser reduction approach takes advantage of the flexibility in local patterning. Moreover, the reduction is from a solid silver nitrate thin film and is executed in the ambient environment that renders this approach a potential method for low-temperature fabrication of metallic electrode conductors for organic electronics.     

Nanostructure and enhancement of the optical properties of Tb-doped NiO for photodiode applications

In the present work, pure and 1, 2.5, 5 and 10% Tb-doped NiO nanostructures were fabricated in the form of thin-films by the sol-gel spin coating process. The prepared structures were identified by an X-ray diffraction pattern and atomic force microscopy. The results of the X-ray diffraction indicate that the prepared films are polycrystalline with a cubic lattice face-centered for wholly Tb-doped concentration films. The surface topography of the films was studied by atomic force microscopy, and surface mapping was introduced to check the quality of the surface for optical investigations. The measured optical transmission indicated a high transmission that exceeds 80% through the visible region depending on the Tb-doping concentrations. It is affirmed that the measured optical bandgap and the index of refraction are strongly influenced by the Tb-doping concentrations. The parameters of nonlinearity were also critically affected by the Tb-doping concentrations. This innovative result can hopefully be applied in an industrialized approach for the field of photodiode devices.     

Synthesis of single crystalline GaN nanoribbons on sapphire (0001) substrates

Single crystalline GaN nanoribbons were synthesized through nitriding Ga₂O₃ thin films deposited on sapphire (0001) substrates by radio frequency magnetron sputtering. The component and structure of nanoribbons were investigated by X-ray diffraction (XRD), scanning electron microscopy (SEM), energy-dispersive X-ray (EDX), transmission electron microscopy (TEM) and high-resolution transmission electron microscopy (HRTEM). The flat and smooth ribbon-like nanostructures are high quality single crystalline hexagonal wurtzite GaN. The thickness and width-to-thickness ratio of the grown GaN nanoribbons are in the range of 8-15 nm and ∼5-10, respectively.     

Interfacial structure and electrical properties of LaAlO3 gate dielectric films on Si by metalorganic chemical vapor deposition

LaAlO₃ (LAO) gate dielectric films were deposited on Si substrates by low-pressure metalorganic chemical vapor deposition. The interfacial structure and composition distribution were investigated by high-resolution transmission electron microscopy (HRTEM), X-ray photoelectron spectroscopy (XPS), secondary-ion mass spectroscopy (SIMS), and Auger-electron spectroscopy (AES). HRTEM confirms that there exists an interfacial layer between LAO and Si in most samples. AES, SIMS, and XPS analyses indicate that the interfacial layer is compositionally graded La–Al silicate and the Al element is severely deficient close to the Si surface. Electrical properties of LAO films were evaluated. No evident difference in electrical properties between samples with and without native SiO₂ layers was observed. The electrical properties are discussed in terms of LAO growth mechanisms, in relation to the interfacial structure. PACS 73.40.Qv; 81.15.Gh; 77.55.+f; 68.35.-p     

Enhancement of polarization in bismuth titanate thin films co-modified by La and Nd for non-volatile memory applications

Bismuth titanate thin films co-modified by La and Nd, Bi_3.15(La_0.425Nd_0.425)Ti₃O₁₂ (BLNT) were grown on Pt/Ti/SiO₂/Si(100) substrates by metalorganic solution decomposition method. The co-substitution leads to structural distortion with enhanced remanent polarization. The BLNT film capacitor with a top Pt electrode showed a large remanent polarization (2P_r) of 90 μC/cm² at an applied voltage of 10 V, which is higher than that of highly c-axis oriented BLT, and comparable with BNdT thin films. The BLNT films exhibited a fatigue-free behavior up to 1×10⁹ switching cycles at a frequency of 1 kHz. These experimental results reveal that BLNT thin films can be used as capacitors in ferroelectric random access memory applications. PACS 73.40.Rw; 73.61.-r; 77.55. +F; 77.80.-E; 81.20.Fw     

Encapsulation and controlled release from core–shell nanoparticles fabricated by plasma polymerization

Core–shell nanostructures have been synthesized by plasma deposition in radio-frequency plasma reactor. Silica and KCl nanoparticles were encapsulated by deposition of isopropanol-based films of amorphous hydrogenated carbon. Through control of the deposition time, under constant deposition rate of 1 nm/min, particles are encapsulated in a layer of plasma polymer with thickness between 15 and 100 nm. Films are robust, chemically inert, thermally stable up to 250°C. The permeability of the shells is determined by depositing films of various thickness onto KCl nanoparticles and monitoring the dissolution of the core in aqueous solution. The dissolution profile is characterized by an initial rapid release, followed by a slow release that lasts up to 30 days for the thickest films. The profile is analyzed by Fickian diffusion through a spherical matrix. We find that this model captures very accurately the entire release profile except for the first 12 hours during which, the dissolution rate is higher than that predicted by the model. The overall diffusion coefficient for the dissolution of KCl is 3 × 10⁻²¹ m²/s.     

Carbon nanotubes and nanostructures grown from diamond-like carbon and polyethylene

We report a simple way to synthesize carbon nanotubes and nanostructures from the solid phase. Vacuum annealing of diamond-like carbon (DLC) films or polyethylene mixed with catalyst in argon atmosphere leads to the formation of nanotubes and nanostructures. High-resolution transmission electron microscopy studies reveal highly graphitized multi-walled nanotubes (MWNTs) or amorphous fibre-like structures, depending on the catalyst amount. This synthesis process may give a new approach to understanding the phase transition of different carbon allotropes into nanotubes or nanostructures. Received: 3 July 2001 / Accepted: 3 July 2001 / Published online: 2 October 2001