Effect of post-metallization annealing on the ferroelectric properties of sol-gel derived PZT thin films

A series of monolithic Pt-PZT-Pt capacitors was prepared based on sol-gel derived PZT 53/47 films fired to 700 C. After deposition of top Pt electrodes, the capacitors were subjected to post-metallization annealing (PMA) temperatures of 100 C to 700 C. Dielectric and ferroelectric (FE) characterizations were performed. Increasing the PMA temperature produced lower values of spontaneous and remanent polarizations, dielectric constant and leakage currents. The observations are correlated with a proposed FE capacitor model.     

Dielectric and piezoelectric properties of dense and porous PZT films prepared by sol-gel method

PZT films with different microstructure and Zr:Ti ratios were fabricated on ITO/glass and platinized silicon wafer substrates by dip-coating. A dense film of 2% porosity and a porous film of 19% porosity were obtained by repetition of thin and thick coatings, respectively. Development of pores during heating the film was examined and heating process factors were investigated. In the film fabricated on ITO/glass substrates, an existence of non-perovskite and low permittivity layer was confirmed by measurement of film thickness dependence of the dielectric constant. Among the films studied, the film with molar composition of Ti:Zr = 5:5 exhibited the largest dielectric constant and apparent piezoelectric coefficient, d ₃₃, though the values were small. Apparent piezoelectric coefficients of d ₃₃ and g ₃₃ of the porous films were larger than those of the dense films.     

Ferroelectric PZT Thin Films by Sol-Gel Deposition

Sol-gel spin coating has a low thermal budget, is cheap compared to vacuum-based techniques and is now routinely used to produce dense, pore-free ferroelectric films. PbZrx Ti(1 – x)O3 (PZT) is utilized in most applications because it has a large remanent polarization, high piezo- and pyroelectric coefficients and optimized electromechanical coupling factors, depending on precise composition. This paper will review some of the principles and applications of PZT films and highlight using transmission electron microscopy some of the basic problems and solutions involved in producing device-quality material on Si-substrates.     

Synthesis and mechanism research of an ethylene glycol-based sol-gel method for preparing PZT nanopowders

Lead zirconate titanate nanopowders Pb(Zr_0.52Ti_0.48)O₃ (PZT) were prepared by modified sol-gel process in ethylene glycol system with zirconium nitrate as the zirconium source. The research showed that it was critical to add lead acetate after the reaction of zirconium nitrate and tetrabutyl titanate in ethylene glycol system for preparing PZT of exact titanium content. The reaction mechanisms of the sol synthesis, preparation of xerogel and agglutinating process were characterized through using FT-IR, NMR, TG-FTIR, and GC-MS. The experiment proved that ethylene glycol system did not rely on hydrolysis and condensation reactions in the process of the sol formation, but on the formation of chain or network large molecules from complexation of ethylene glycol and all Ti and minor Pd, Zr. In the preparation of xerogel, the complexation reaction was so completed that it formed large molecules network composed of metal and dioxyethyl. Bulk weight loss happened before 350°C in the process of sintering xerogel to prepare PZT nanopowders. Volatile matters and vapor phase decomposition resultants were primarily oxy-compounds including ethylene glycol, aldehyde-ketone compounds, carbon dioxide and nitrate radical conversion matters. After 350°C, primary vapor phase decomposition resultants were carbon dioxide and minor carbonyl compound.     

High-resolution inspections of ferroelectric thin PZT films

Lead zirconate titanate (PZT) materials have been widely investigated for applications in dynamic random access memories and non-volatile random access memories. The developments of such applications are conditionned by the fabrication of thin films. The main advantages of the sol-gel method include low cost and high quality control of the deposited thin films. Electric force microscopy and near-field optical microscopy are proposed as high-resolution inspection methods at the nanometric scale to extend the classical macroscopic characterizations.     

Microstructure and ferroelectric properties of r.f. magnetron sputtering derived PZT thin films deposited on interlayer (PbO/TiO2)

Lead zirconate titanate (PZT) thin films were deposited on Pt/Ti/SiO₂/Si and interlayer/Pt/Ti/SiO₂/Si substrate by radio frequency (r.f.) magnetron sputtering with a Pb_1.1Zr_0.53Ti_0.47O₃ target. The crystallization of the PZT thin films was formed only by substrate temperature. When interlayer (PbO/TiO₂) was inserted between the PZT thin film and the Pt electrode, the grain growth and processing temperature of the PZT thin films were considerably improved. Compared to PZT/Pt structure, the dielectric constant and polarization properties of the PZT/interlayer/Pt structure were fairly improved. In particular, PZT/interlayer/Pt at the substrate temperature of 400 °C showed prevalent ferroelectric properties (_r=475.97, tanδ=0.0591, P_r=23 μC/cm²). As a result of an X-ray photoelectron spectroscopy (XPS) depth-profile analysis, it was found that PZT/interlayer/Pt deposited only by substrate temperature without the post-annealing process via r.f. magnetron sputtering method remained independent of each other regardless of substrate temperatures.     

Stable PZT sol for preparing reproducible high-permittivity perovskite-based thin films

Results are reported on the development of high-K dielectric material using sol-gel chemistry. High permittivity thin film capacitor have been developed based on lead-zirconate-titanate (PbZr _x Ti_1−x O₃, PZT) ferroelectric ceramic layers deposited on to 6″ platinized silicon wafer using the spin-coating technique. Selecting a diol-based solvent as diluting medium, a PZT solution with remarkable shelf life up to 1 year has been prepared. To synthesize such a reproducible and time-stable solution, a ripening step before dilution has been introduced. The deposition process has been also optimized to reduce the required number of coatings and to avoid intermediate high-temperature annealing. By carefully controlling environmental parameters, the as-developed PZT solution leads to reproducible high-performance thin film capacitor, enabling an industrial use. Thus, 200-nm thick PZT layers with permittivity as high as 900, capacitance as high as 40 nF/mm2 and breakdown voltage up to 30 V have been obtained.     

Influence of the process parameters on the structural and electric properties of ferroelectric and antiferroelectric PZT thin films realized on stainless steel by a Sol–gel derived method

Pb _x Zr_yTi_1−yO₃ thin films were prepared by a modified Sol–gel method using alkoxides precursor compounds and spin-coating onto RuO₂ coated stainless steel substrates. Depending on the zirconate/titanate ratio, both, ferroelectric and antiferroelectric behaviour has been obtained. Oxidation of the metal substrate due to the PZT crystallization process was studied in order to verify the influence of the heat treatment on the substrate morphology. In order to improve the properties of antiferroelectric Pb _x Zr_0.95Ti_0.05O₃, the influence of the lead excess in the composition was investigated. Thefs dependence of the switching field distribution from the annealing time and temperature, as well as the fatigue behaviour of the films, is discussed.     

Lead zirconate titanate (PZT) films deposited by a hydrothermal method

We present a hydrothermal method to deposit PZT films. It uses a single-step hydrothermal process and user-friendly precursors. Pb(Zr_0.52,Ti_0.48)O₃ polycrystalline films, 5–10 μm thick, were produced in an aqueous basic solution (4M KOH) on a titanium substrate in a closed autoclave at 180 °C. A time-depending study to see the evolution of the films' formation is described. Some actuation testing is also presented.     

Effect of residual stress on piezoelectric property of Pb(Zr,Ti)O<Subscript>3</Subscript> films fabricated by sol-gel process

The effects of the residual tensile stress induced during the heat treatment process after sol-gel coating on the piezoelectric properties of PbZr_xTi_1-xO₃ (PZT) films were investigated. PZT films were deposited on platinized silicon substrates using a sol containing polyvinylpyrrolidone (PVP). After the coating process, the films were elastically bent concavely by using a fixture during the annealing process. The substrate was bent by an external force, then the gel film was fired while the substrate bending being kept, and after cooling the external force was removed, which could manipulate the residual stress in films. The piezoelectric displacement was markedly increased due to the development of residual stress.     

Polarization inscription in ferroelectric (111) PZT and (100) SBT films

Ferroelectric thin films form an equilibrium domain structure compatible with their respective crystallographic symmetry. In tetragonal (111) PZT, 90° domains prevail; in (pseudo-tetragonal) (100) SBT both 90° and 180° domains are present. The size of 90° domains has been measured for e.g., PZT as slabs of 15 nm width. Domain size is a result of stress minimization in the film during the paraelectric (PE) → ferroelectric (FE) transition. A precise and regular domain pattern for (111) PZT and (100) SBT films has been investigated in detail by TMSFM. Single domains can be addressed mechanically with the tip of an AFM. Such single domain switching corresponds to a data storage density of 200 Gbit/inch². Applications of ferroelectric and high- paraelectric materials for e.g., non-volatile data storage replacing DRAM devices or as sensors in infrared cameras are increasingly becoming popular.     

Control of microstructure and functional properties of PZT thin films via UV assisted pyrolysis

The influence of ultraviolet (UV) light during pyrolysis of sol-gel fabricated Pb(Zr_0.52Ti_0.48)O₃ thin films on (111)Pt/Ti/SiO₂/Si substrates has been investigated. The UV treated films show a homogeneous fine grain structure with (100) preferential orientation, whereas a bimodal grain structure and (111) preferential orientation were found for the untreated film. This is explained in terms of specific template layers formed during pyrolysis. The ferroelectric, dielectric and piezoelectric properties are also reported for both films. It is shown that while the ferroelectric properties are higher for the (111) films, the (100) films show better dielectric and piezoelectric properties with an effective piezoelectric coefficient, d _33eff, of 183 pm/V vs. 101.8 pm/V for the (111) films.     

Effect of Niobium Modifications to PZT (53/47) Thin Films Made by a Sol-Gel Route

Niobium-modified lead zirconate titanate thin films (PNZT) with nominal compositions, Pb_(1–0.5x) (Zr_0.53 Ti_0.47)_1–x Nb _x O₃:x = 0.02–0.07, have been prepared using a diol based sol-gel route. Single-layer (0.5 m) films were fabricated on platinised silicon substrates by spin-coating. The effect of niobium additions with regard to phase development, microstructure, and ferroelectric and dielectric properties were investigated for different annealing temperatures. For comparison, unmodified PZT films were also prepared. Niobium substitution increased the crystallisation temperatures for perovskite PNZT phase formation. The values of remanent polarisation P _r and dielectric constant _r were found to decrease with the introduction of Nb. For example, in films heated at 700°C for 15 min, the P _r value of an unmodified PZT film was 31 C cm^–2, compared to 17 C cm^–2 for an x = 0.05 PNZT film, whilst respective relative permittivity values fell from 1190 to 600. The highest Nb concentration film, x = 0.07, did not display any switchable polarisation characteristics, which is consistent with high levels of intermediate pyrochlore phase.     

Epitaxial thin film of SmFeO3 ferroelectric heterostructures

Epitaxial growth of SmFeO3/SrRuO3 was achieved on SrTiO3 substrates by the pulsed laser deposition(PLD)method at 973 K under oxygen partial pressure of 12.5 Pa.No Fe2+leakage was detected in our SmFeO3 film.The remanent polarization and coercive electric field of the thin film with a higher degree of orientation along(110)were 1.97μC/cm2 and 0.89×104 V/cm at room temperature,respectively.This film showed enhanced canted antiferromagnetism spin ordering compared with its corresponding powder materials.     

Influence of powder preparation process on piezoelectric properties of PZT sol-gel composite thick films

In this work, piezoelectric PbZr_0.52Ti_0.48O₃ (PZT) thick films were deposited onto silicon and alumina substrates using sol-gel composite slurry. Thick films prepared with rough and attrited powders are compared. A time stable polymeric PZT sol was first synthesised as the binder. It was then used as a precursor for PZT powder fabrication. Powder attrition ball milling was optimised to reduce the particles size to 200 nm. Composite slurries were obtained by mixing PZT sol with attrited or rough powders and thick films were deposited by dip-coating. The film thickness, roughness and microstructure were studied as a function of powder content, particle size, sol concentration and slurry ageing. Electromechanical measurements were performed. By strictly controlling each step of the thick film fabrication, high coupling factor (thickness mode, k_t) can be obtained using both types of powder. Nevertheless, with attrited powder, better and more reproducible effective coupling coefficients in thickness mode (k_t up to 46%) were reported on silicon and alumina substrates.     

Effect of sol-gel preparation method on particle morphology in pure and nanocomposite PZT thin films

Double-scale composite lead zirconate titanate Pb(Zr_0.52Ti_0.48)O₃ (PZT) thin films of 360 nm thickness were prepared by a modified composite sol-gel method. PZT films were deposited from both the pure sol and the composite suspension on Pt/Al₂O₃ substrates by the spin-coating method and were sintered at 650°C. The composite suspension formed after ultrasonic mixing of the PZT nanopowder and PZT sol at the powder/sol mass concentration 0.5 g mL⁻¹. PZT nanopowder (≈ 40–70 nm) was prepared using the conventional sol-gel method and calcination at 500°C. Pure PZT sol was prepared by a modified sol-gel method using a propan-1-ol/propane-1,2-diol mixture as a stabilizing solution. X-ray diffraction (XRD) analysis indicated that the thin films possess a single perovskite phase after their sintering at 650°C. The results of scanning electron microscope (SEM), energy-dispersive X-ray (EDX), atomic force microscopy (AFM), and transmission electron microscopy (TEM) analyses confirmed that the roughness of double-scale composite PZT films (≈ 17 nm) was significantly lower than that of PZT films prepared from pure sol (≈ 40 nm). The composite film consisted of nanosized PZT powder uniformly dispersed in the PZT matrix. In the surface micrograph of the film derived from sol, large round perovskite particles (≈ 100 nm) composed of small spherical individual nanoparticles (≈ 60 nm) were observed. The composite PZT film had a higher crystallinity degree and smoother surface morphology with necklace clusters of nanopowder particles in the sol-gel matrix compared to the pure PZT film. Microstructure of the composite PZT film can be characterized by a bimodal particle size distribution containing spherical perovskite particles from added PZT nanopowder and round perovskite particles from the sol-matrix, (≈ 30–50 nm and ≈ 100–120 nm), respectively. Effect of the PZT film preparation method on the morphology of pure and composite PZT thin films deposited on Pt/Al₂O₃ substrates was evaluated.     

Preparation of Thick PZT Ceramic Film by an Interfacial Polymerization

The formation of a PZT film of 10–20 m in thickness via an interfacial polymerization of metal-organic precursors has been studied. A commercially available PZT precursor solution developed for dip- or spin-coating was diluted with hexane containing acetylacetone as chelating agent. The solution was poured on water contained in a teflon reaction container of 88 mm inside diameter. A translucent gel film was formed at the interface of the two immiscible liquids. While floating on water it shrank as the evaporation of solvent proceeded until its diameter decreased to about 45% of its initial value. The dried gel film was almost pore free and its thickness was estimated to be about 10 m.     

湿化学工艺导电性LaNiO3薄膜的制备表征及应用

为改进以醇盐为原料溶胶-凝胶制备LaNiO3(LNO)薄膜工艺中存在的诸多苛刻因素,本文以无机盐为原料,利用湿化学工艺在硅衬底上制备了LNO薄膜,La(NO3)3·6H2O和Ni(NO3)2·6H2O冰醋酸溶液通过配体交换形成金属醋酸盐的冰醋酸溶液,回流时用乙酸酐(CH3CO)2O除硝酸根和结晶水,而乙酰丙酮(AcAc...     

Selective reaction and chemical anisotropy in epitaxial bismuth layer-structured ferroelectric thin films

Bismuth layer-structured ferroelectric thin films consisting of a stacking of pseudoperovskite and bismuth oxide blocks along the c-axis were epitaxially grown on single-crystal substrates by metalorganic chemical vapor deposition (MOCVD), and a selective reaction of the bismuth oxide layer with HCl was demonstrated. Epitaxial films with contrasting crystal orientations were used for the acid treatment in order to probe chemical anisotropy. For a/b-axis-oriented SrBi₂Ta₂O₉, Bi₄Ti₃O₁₂, and SrBi₄Ti₄O₁₅ films with sequential stacking of the two vertical blocks, notable structural selectivity of the reaction was observed only for SrBi₂Ta₂O₉. For this film, the pseudoperovskite block remained and the bismuth oxide block was removed, while both blocks of Bi₄Ti₃O₁₂ and SrBi₄Ti₄O₁₅ dissolved into the acid. In addition to the bismuth, the other cations in the pseudoperovskite blocks, strontium and titanium, also decreased for Bi₄Ti₃O₁₂ and SrBi₄Ti₄O₁₅. The selective reaction observed for a/b-axis-oriented SrBi₂Ta₂O₉, however, was not observed for c-axis-oriented SrBi₂Ta₂O₉ films in which the pseudoperovskite and bismuth oxide blocks were stacked horizontally. The results clearly show that SrBi₂Ta₂O₉ has sub-nano-order structural selectivity and chemical anisotropy in the unit cell in the reaction with HCl.