Study of ion implanted Al0.25Ga0.75As/GaAs by Raman spectroscopy

This paper reported the effect of the weak damage in the Al_0.25Ga_0.75As/GaAs epitaxial layer induced by 0.8 MeV Si ions implantation with ion dose from 1 × 10¹⁴ to 5 × 10¹⁵ cm^-2. The Raman spectra measured on these samples showed that there were two kinds of phonon modes existing in the epitaxial Al_0.25Ga_0.75As films. The strains induced in the implanted layer and the corresponding lattice parameters were also evaluated as a function of the implanted dose. In addition, the Rutherford backscattering spectrometry/channeling (RBS/C) was also measured on these samples. These two measurement techniques all confirmed that the implantation only induced weak damage in the material.