Effect of deposition and annealing temperature on mechanical properties of TaN film

Tantalum nitride films (TaN) were synthesized by microwave ECR-DC sputtering. The effects of deposition and annealing temperature on mechanical properties of TaN films were investigated. Cross-section pattern, microstructure and binding energy of the films were investigated by scanning electron microscope (SEM), X-ray diffraction (XRD) and X-ray photoelectron spectroscopy (XPS), respectively. Mechanical properties were evaluated using nano-indentation and scratch tester. The results showed that the maximal hardness value of approximately 40 GPa was deposited in the TaN sample at 573 K. While the preparation temperature decreased, the hardness, modulus and adhesion of TaN film also decreased. Hardness and modulus also decreased with the increase in annealing temperature. Meanwhile the adhesion strength was also sensitive to the annealing temperature, with a maximum adhesion strength of 40 N measured in the TaN film annealed at 448 K. The results demonstrated that a desirable mechanical property of TaN films deposited by DC reactive magnetron sputtering can be obtained by controlling the deposition and annealing temperature.     

Structural and electrical properties of tantalum nitride thin films fabricated by using reactive radio-frequency magnetron sputtering

TaN thin film is an attractive interlayer as well as a diffusion barrier layer in [FeN/TaN]_n multilayers for the application as potential write-head materials in high-density magnetic recording. We synthesized two series of TaN films on glass and Si substrates by using reactive radio-frequency sputtering under 5-mtorr Ar/N₂ processing pressure with varied N₂ partial pressure, and carried out systematic characterization analyses of the films. We observed clear changes of phases in the films from metallic bcc Ta to a mixture of bcc Ta(N) and hexagonal Ta₂N, then sequentially to fcc TaN and a mixture of TaN with N-rich phases when the N₂ partial pressure increased from 0.0% to 30%. The changes were associated with changes in the grain shapes as well as in the preferred crystalline orientation of the films from bcc Ta [100] to [110], then to random and finally to fcc TaN [111], correspondingly. They were also associated with a change in film resistivity from metallic to semiconductor-like behavior in the range of 77–295 K. The films showed a typical polycrystalline textured structure with small, crystallized domains and irregular grain shapes. Clear preferred (111) stacks parallel to the substrate surface with embedded amorphous regions were observed in the film. TaN film with [111]-preferred orientation and a resistivity of 6.0 mΩ cm was obtained at 25% N₂ partial pressure, which may be suitable for the interlayer in [FeN/TaN]_n multilayers. Received: 6 December 1999 / Accepted: 24 July 2000 / Published online: 9 November 2000     

Synthesis and characterization of nanocrystalline TaN

Tantalum nitride (TaN) nanocrystals have been successfully synthesized at 650 °C through a solid-state reaction in an autoclave. The X-ray powder diffraction pattern indicates that the product is a mixture of hexagonal and metastable cubic TaN. Transmission electron microscopy images and selected area electron diffraction patterns show that the hexagonal TaN crystallites consist of nanorod with a typical size of about 50×1000 nm and the cubic TaN crystallites are composed of uniform particles with an average size of about 30 nm.     

Oxygen diffusion through thin Pt films on Si(100)

We have investigated the diffusion of oxygen through evaporated platinum films on Si(100) upon exposure to air using substrates covered with Pt films of spatially and continuously varying thickness (0–500 Å). Film compositions and morphologies before and after silicidation were characterized by modified crater edge profiling using scanning Auger microscopy, energy-dispersive X-ray microanalysis, scanning tunneling microscopy, and transmission electron microscopy. We find that oxygen diffuses through a Pt layer of up to 170 Å forming an oxide at the interface. In this thickness range, silicide formation during annealing is inhibited and is eventually stopped by the development of a continuous oxide layer. Since the platinum film consists of a continuous layer of nanometer-size crystallites, grain boundary diffusion of oxygen is the most probable way for oxygen incorporation. The diffusion constant is of the order of 10^–19 cm²/s with the precise value depending on the film morphology.     

Composition of tantalum nitride thin films grown by low-energy nitrogen implantation: a factor analysis study of the Ta 4 f XPS core level

Tantalum nitride thin films have been grown by in situ nitrogen implantation of metallic tantalum at room temperature over the energy range of 0.5–5 keV. X-ray photoelectron spectroscopy and factor analysis (FA) have been used to characterize the chemical composition of the films. The number of the different Ta–N phases formed during nitrogen implantation, as well as their spectral shapes and concentrations, have been obtained using principal component analysis and iterative target transformation factor analysis, without any prior assumptions. According to FA results, the composition of the tantalum nitride films depends on both the ion dose and the ion energy, and is mainly formed by a mixture of metallic tantalum, β-TaN_0.05 , γ-Ta₂N and cubic/hexagonal TaN phases. The kinetics of tantalum nitridation is characterized by two stages. In the first stage, the formation of β-TaN_0.05 species leads to a strong attenuation of the metallic tantalum signal. During the second stage, β-TaN_0.05 transforms into γ-Ta₂N and cubic/hexagonal TaN species. For intermediate ion doses, the concentration of γ-Ta₂N reaches a maximum, subsequently decreasing because of its transformation into cubic/hexagonal TaN phases with increasing ion dose up to saturation. At saturation, the films are mainly composed of a mixture of γ-Ta₂N and cubic/hexagonal TaN phases, but small Ta⁰ and β-TaN_0.05 signals are also observed. They should be attributed to preferential sputtering of nitrogen and/or to the limited thickness of the film. Comparison of the experimental nitrogen concentration with that obtained using TRIDYN simulations suggests that, in addition to nitrogen implantation and atomic mixing, other mechanisms, like ion beam enhanced diffusion or the chemical reactivity of the tantalum substrate towards nitrogen, should also be taken into account at higher ion-beam energies. PACS 68.49.Uv; 68.55.Nq; 81.05.Je; 81.70.Jb     

Effect of Pretreatment of TaN Substrates on Atomic Layer Deposition Growth of Ru Thin Films

The polycrystalline ruthenium films are grown on TaN substrates by atomic layer deposition （ALD） using bis（cyclopentadienyl） ruthenium [RuCp2] and oxygen as ruthenium precursor and reactant respectively at a deposition temperature of 330℃. The low-energy Ar ion bombardment and Ru pre-deposition are performed to the underlying TaN substrates before ALD process in order to improve the Ru nucleation. X-ray diffraction, x-ray photoelectron spectroscopy, scanning electron microscopy and atomic force microscopy are carried out to characterize the properties of ALD Ru films. The results show that the nucleation density of Ru films with Ar^＋ bombardment to the underlying TaN substrates is much higher than that of the ones without any pretreatment. The possible reasons are discussed.     

Effect of interface layer on growth behavior of atomic-layer-deposited Ir thin film as novel Cu diffusion barrier

Growth and nucleation behavior of Ir films grown by atomic layer deposition (ALD) on different interfacial layers such as SiO₂, surface-treated TaN, and 3-nm-thick TaN were investigated. To grow Ir thin film by ALD, (1,5-cyclooctadiene) (ethylcyclopentadienyl) iridium (Ir(EtCp)(COD)) and oxygen were employed as the metalorganic precursor and reactant, respectively. To obtain optimal deposition conditions, the deposition temperature was varied from 240 to 420 °C and the number of deposition cycles was changed from 150 to 300. The Ir film grown on the 3-nm-thick TaN surface showed the smoothest and most uniform layer for all the deposition cycles, whereas poor nucleation and three-dimensional island-type growth of the Ir layer were observed on Si, SiO₂, and surface-treated TaN after fewer number of deposition cycles. The uniformity of the Ir film layer was maintained for all the different substrates up to 300 deposition cycles. Therefore we suggest that the growth behavior of the Ir layer on different interface layer is related to the chemical bonding pattern of the substrate film or interface layer, resulting in better understand the growth mechanism of Ir layer as a copper diffusion barrier. The ALD-grown Ir films show the preferential direction of (1 1 1) for all the reflections, which indicates the absence of IrO₂ in metallic Ir.     

A study of H2S adsorption kinetics on the clean and oxygen covered (110) surface of copper

The very low pressure adsorption kinetics of H₂S on the clean and oxygen covered Cu(110) face have been examined by Auger Electron Spectroscopy (AES) and Mirror Electron Microscopy (MEM, used for continuous surface potential variations of the copper surface). The AES experimental curves on the clean copper face have been interpreted using a model of island growth by surface diffusion. The presence of an adsorbed oxygen layer on the copper surface changes notably the induction times observed on both AES and MEM measurements.     

Incorporation of nitrogen into amorphous-hydrogenated carbon (diamond-like) films

Nitrogen-doped amorphous hydrogenated carbon films (a-C:H) were prepared by mixing nitrogen gas and benzene during dc plasma discharge deposition. The growth rate of the film decreases strongly with increasing nitrogen content in the mixture. The nitrogen concentration in the films was determined by nuclear reaction analysis (NRA) and Auger electron spectroscopy (AES) using suitable calibration samples. The results of AES measurements are generally consistent with NRA values. Nitrogen incorporation in the a-C:H films shows pronounced doping effects as reflected in their optical and electrical properties.Dedicated to Professor J. P. F. Sellschop for his 60^th birthday     

Copper diffusion in TaN-based thin layers

The diffusion of Cu through TaN-based thin layers into a Si substrate has been studied. The barrier efficiency of TaN/Ta/TaN multilayers of 150 nm in thickness has been investigated and is compared with that of TaN single layers. Thermal stabilities of these TaN-based thin layers against Cu diffusion were determined from in situ X-ray diffraction experiments, conducted in the temperature range of 773-973 K. The TaN/Ta/TaN barrier appeared to be more efficient in preventing Cu diffusion than the TaN single layer.     

Laser deposition of amorphous diamond films from liquid aromatic hydrocarbons

6 H₅CH₃, C₆H₆, and C₆H₅CH(CH₃)₂) to pulsed visible laser radiation of a copper vapor laser (λ=510.6 nm). The X-ray Auger electron spectroscopy (XAES), reflection high energy electron diffraction (RHEED), and Raman analysis are employed to characterize the deposited films. The sp³ fraction in deposited films amounts to 60–70% and depends on the precursor. The average film thickness on a glass substrate is about 100 nm. The films show excellent adherence, are transparent in the visible and have microhardness of 50–70 GPa, as measured by nanoindentor. Received: 28 September 1998 / Accepted: 13 January 1999     

Diffusion behaviour of Au/Ni bilayers deposited by electron beam evaporation and sputtering onto massive copper substrates

We have studied the diffusion behaviour of Au/Ni bilayers deposited onto massive copper substrates by electron beam evaporation and sputtering. The structure of the gold films is characterized by transmission electron microscopy. The diffusion of Ni through Au and of Cu through the Au/Ni bilayer is controlled by Auger spectroscopy using the method of the “first arrival”. Diffusion annealings were performed between 300 and 400 °C. The results are discussed in relation with the structure of the films. It appears that a small deposition rate favours single crystal areas in the deposited film and consequently makes a more effective diffusion barrier.     

AES studies of palladium films formed on copper and mica

Thin epitaxial films of palladium were grown on epitaxial copper films and cleaved mica in ultra high vacuum. The growth modes of these films were investigated by Auger electron spectroscopy (AES), low energy electron diffraction (LEED), transmission electron microscopy (TEM), and TEM replica techniques. Layer by layer growth of Pd on Cu and mica was observed and inelastic mean free paths of Auger electrons for energies of 60 eV (Cu MMM) and 329 eV (Pd MNN) were calculated. These values were 5.7 and 6.9 Å respectively. The thermal stability of monocrystalline and polycrystalline Pd/Cu bilayer films at 483 K was also investigated by AES and TEM. It was found that Pd agglomerates on the Cu at this temperature to form a Stranski-Krastanov growth morphology. The agglomeration is much more rapid on polycrystalline films, suggesting that high surface diffusivity paths (grain boundaries and possibly other defects) enhance the surface diffusion of Pd on Cu.     

Investigation of Ni/Ta contacts on 4H silicon carbide upon thermal annealing

Nickel and Tantalum thin films with 3:5 thickness ratios were deposited in succession onto 4H-SiC substrate at room temperature. The samples were then heated in situ in vacuum at 650, 800 or 950 °C for 30 min. Glancing angle X-ray diffraction (XRD), Auger electron spectroscopy (AES) and current-voltage (I-V) technique were used for characterising the interfacial reactions and electrical properties. Amorphous Ni-Ta can be formed by solid-state reaction at 650 °C. The minor dissolved Ni in the Ta metal promotes the reaction between Ta and SiC. With increasing annealing temperature up to 950 °C, the dominant carbide changes from Ta₂C to TaC and a layer structure is developed. Electrical measurements show that ohmic contact is formed after annealing at or above 800 °C.     

Chemical characterization by XPS of Cu/Ge ohmic contacts to n-GaAs

Chemical composition of Cu/Ge layers deposited on a 1 μm thick n-type GaAs epitaxial layer (doped with Te to a concentration of 5 × 10¹⁸ cm⁻³) and its interface were examined ex situ by XPS combined with Ar⁺ sputtering. These measurements indicate a diffusion of Cu and Ge from the Cu/Ge layer towards GaAs and, also, an out-diffusion of Ga and As from the GaAs layer to the metallic films. The Auger parameter corrected Auger spectra and XPS spectra show only Cu and Ge metals in the in the Cu/Ge layer and in the interface.     

C-axis oriented growth of magnetron sputtered YBaCuO thin films on MgO substrates

Highly textured YBaCuO thin films were sputtered on MgO (100)-oriented single crystal substrates at ambient temperature followed by an anneal in oxygen for 1 h at temperatures up to 920 °C. X-ray diffractograms of the highly textured films indicate an orientation of the c-axis of the YBaCuO lattice perpendicular to the substrate surface. There are strong indications that the oriented c-axis growth is due to a CuO self-flux effect. Auger measurements reveal a copper diffusion profile into the substrate down to a depth of more than 400 nm.     

Excimer laser crystallization of amorphous silicon on metallic substrate

An attempt has been made to achieve the crystallization of silicon thin film on metallic foils by long pulse duration excimer laser processing. Amorphous silicon thin films (100 nm) were deposited by radiofrequency magnetron sputtering on a commercial metallic alloy (N42-FeNi made of 41 % of Ni) coated by a tantalum nitride (TaN) layer. The TaN coating acts as a barrier layer, preventing the diffusion of metallic impurities in the silicon thin film during the laser annealing. An energy density threshold of 0.3 J?cm^?2, necessary for surface melting and crystallization of the amorphous silicon, was predicted by a numerical simulation of laser-induced phase transitions and witnessed by Raman analysis. Beyond this fluence, the melt depth increases with the intensification of energy density. A complete crystallization of the layer is achieved for an energy density of 0.9 J?cm^?2. Scanning electron microscopy unveils the nanostructuring of the silicon after laser irradiation, while cross-sectional transmission electron microscopy reveals the crystallites’ columnar growth.     

Investigation of the chemical state of copper in Cu/SiO2 composite films by x-ray photoelectron spectroscopy

The concentration and chemical state of copper in the subsurface region of Cu/SiO₂ composite films obtained by simultaneous magnetron sputtering from two sources (Cu and SiO₂) are determined by x-ray photoelectron spectroscopy (XPS). It is established that copper in the as-grown film is primarily in the form of unoxidized atoms dispersed in a SiO₂ matrix. Annealing of the film results in practically no oxidation, but about 70% of the copper atoms condense into metallic clusters with sizes below 10 Å in the subsurface region and about 50 Å in the bulk of the film. The changes in the binding energy of core electrons, and especially in the energies of Auger electrons, are so large in this situation that photoelectron and Auger spectroscopy are efficient methods for monitoring the chemical state of this composite material.     

Metal/TaN (≈5 nm)/Si diode fabricated by DC magnetron sputtering

Metal/ultrathin Tantalum Nitride (TaN)/p-Si (MTS) diodes were fabricated using dc magnetron reactive sputtering to form the ultrathin (5 nm) resistive TaN layer. The diode quality factor and barrier height were directly related to the substrate arrangement during sputtering of the ultrathin TaN layer. An effective barrier height of 0.75±0.01 eV and near-unity diode quality factor were observed while the plane of the substrate was perpendicular to that of the target. However, an effective barrier height of 0.78±0.01 eV and a diode quality factor around 1.15±0.02 were seen while the substrate was parallel to the target. Thermal stability of the as-deposited diodes was studied using elevated-temperature treatment with different time intervals at 100°C and 150°C, respectively. Thermal stability of the MTS diodes was also related to the substrate arrangement during sputtering.     

同位素示踪法研究铜薄膜在水汽中的氧化传质机理

采用H¹⁶₂O/H¹⁸₂O接续氧化并结合同位素示踪方法,研究了铜薄膜在水汽中氧化的传质机理.将真空热蒸发制备的铜薄膜样品,分别在H¹⁶₂O,H¹⁸₂O中以及H¹⁶₂O/H¹⁸₂O接续进行氧化处理;利用X射线衍射(XRD)研究了氧化产物的形态和结构 关键词： 同位素示踪 短路扩散 铜薄膜 18₂O')" href="#">H¹⁸₂O