Synthesis,structural and ellipsometric evaluation of oxygen-deficient and nearly stoichiometric zinc oxide and indium oxide nanowires/nanoparticles

Oxygen-deficient (OD) and nearly stoichiometric (NST) ZnO and In₂O₃ nanowires/nanoparticles were synthesized by chemical vapor deposition on Au-coated silicon substrates. The OD ZnO and OD In₂O₃ nanowires were synthesized at 750 and 950°C, respectively, using Ar flow at ambient pressure. A mixture of flowing Ar and O₂ was used for synthesizing NST ZnO nanowires and NST In₂O₃ nanoparticles. Growth of OD ZnO nanowires and NST In₂O₃ nanoparticles was found to be via a vapor–solid (VS) mechanism and the growth of NST ZnO nanowires was via a vapor–liquid–solid mechanism (VLS). However, it was uncertain whether the growth of OD In₂O₃ nanowires was via a VS or VLS mechanism. The optical constants, thickness and surface roughness of the prepared nanostructured films were determined by spectroscopic ellipsometry measurements. A three-layered model was used to fit the calculated data to the experimental ellipsometric spectra. The refractive index of OD ZnO, NST ZnO nanowires and NST In₂O₃ nanoparticles films displayed normal dispersion behavior. The calculated optical band gap values for OD ZnO, NST ZnO, OD In₂O₃ nanowires and NST In₂O₃ nanoparticles films were 3.03, 3.55, 2.81 and 3.52?eV, respectively.     

Observation of ferri-nonmagnetic boundary in CrPt3 line-and-space patterned media using a dark-field transmission electron microscope

Ion beam patterned CrPt₃ films were prepared by Kr⁺ ion irradiation at a dose of 2×10¹⁴ ions/cm² onto L1₂-ordered CrPt₃ whose surface was partially masked by electron beam patterned resists. Cross-sectional observation using transmission electron microscopy was carried out to study the patterning boundary of the CrPt₃ film. Dark-field imaging showed a distinct contrast between non-irradiated (L1₂ phase) and irradiated (A1 phase) regions. The transition width between the two phases was estimated to be about 5 nm, which agreed well with the value simulated by a transport ion in matter (TRIM) code simulation.     

Structural-optical study of high-dielectric-constant oxide films

High-k polycrystalline Pr₂O₃ and amorphous LaAlO₃ oxide thin films deposited on Si(0 0 1) are studied. The microstructure is investigated using X-ray diffraction and scanning electron microscopy. Optical properties are determined in the 0.75-6.5 eV photon energy range using spectroscopic ellipsometry. The polycrystalline Pr₂O₃ films have an optical gap of 3.86 eV and a dielectric constant of 16-26, which increases with film thickness. Similarly, very thin amorphous LaAlO₃ films have the optical gap of 5.8 eV, and a dielectric constant below 14 which also increases with film thickness. The lower dielectric constant compared to crystalline material is an intrinsic characteristic of amorphous films.     

Preparation and characterization of SiO2/ZrO2/Ag multicoated microspheres

A new type of multicoated silica/zirconia/silver (SiO₂/ZrO₂/Ag) core-shell composite microspheres is synthesized in this paper. In the process, ZrO₂-decorated silica (SiO₂/ZrO₂) core-shell composites were firstly fabricated by the modification of zirconia on silica microspheres through the hydrolysis of zirconium precursor. Subsequently, on SiO₂/ZrO₂ composite cores, silver nanoparticles were introduced via ultrasonic irradiation and acted as “Ag seeds” for the formation of integrate silver shell by further reduction of silver ions using formaldehyde as reducer. The resulting samples were characterized by transmission electron microscopy, X-ray diffraction, Fourier-transform infrared, energy-dispersive X-ray, and UV-vis spectroscopy, indicating that zirconia and silver layers were successfully coated on the surfaces of silica microspheres.     

Two routes to polycrystalline CoSi2 thin films by co-sputtering Co and Si

Two processes for the fabrication of polycrystalline CoSi₂ thin films based on the codeposition of Co and Si by sputtering were studied and compared. The first process involved “annealing after deposition”, where Co and Si are codeposited at ambient temperature and then crystallized by annealing. This process yielded randomly oriented plate-like CoSi₂ grains with a grain size that is governed by the nanostructure of the as-deposited film. Polycrystalline CoSi₂ thin films were obtained at a process temperature of 170 °C, which was much lower than the annealing temperature of 500 °C needed for Co/Si bilayers. The second process involved “heating during deposition”, where Co and Si are codeposited on heated substrates. This process yielded CoSi₂ grains with a columnar structure, and the grain size and degree of (1 1 1) orientation are temperature dependent. The sheet resistance of the resulting films was determined by the preparation temperature regardless of the deposition process used, i.e. “annealing after deposition” or “heating during deposition”. Temperatures of 500 °C and higher were needed to achieve CoSi₂ resistivity of 40 μΩ cm or lower for both processes.     

Activated carbon as back contact for HTM-free mixed cation perovskite solar cell

Carbon materials have potential applications in perovskite solar cell because of their excellent electronic properties and low cost. In this paper, we report, for the first time, activated carbon as a back contact for hole transport layer-free mixed halide perovskite solar cells. The ability of activated carbon to form conducting chain-like structure when dispersed in a polymeric solution makes it a possible candidate for back contact. A composite of activated carbon and PEMA was optimized with varying concentration. Mixed cation was used as a perovskite absorber and was analysed for its structural and optical properties. The fabricated devices were studied for their electrical performance. They were also subjected to stability study and showed promising results.     

Structure, electrochromic and optical properties of WO3 film prepared by dip coating-pyrolysis

The tungsten oxide (WO₃) film was grown by dip coating-pyrolysis method with the PEG-400 as the structure-directing agent. Microstructure of the WO₃ film was characterized by TG-DSC, XRD and SEM techniques. It was found that the film annealed at 350 °C for 2 h comprised cubic WO₃ and orthorhombic WO₃. The measurements of the cyclic voltammetry (CV) and UV-vis spectrum suggested that the WO₃ film had a good electrochromic reversibility performance. The film possessed excellent modulation to the visible light and the maximal average transmittance modulation reached 70.06%.     

Effect of temperature of annealing on optical, structural and electrochromic properties of sol-gel dip coated molybdenum oxide films

The sol-gel dip-coating method is used for the preparation of MoO₃ thin films. The 6 layered MoO₃ films were prepared and annealed at various temperatures in the range of 200-350 °C. The band gap value for MoO₃ films were calculated from optical absorption measurements and it is in the range of 3.55-3.73 eV. XRD spectrum reveals (0 2 0) is the major diffraction plane for the films prepared above 250 °C, which reveals the formation of MoO₃ in α-orthorhombic phase. The films prepared at 200 °C and 250 °C exhibits amorphous nature. The FTIR spectrum confirms the presence of Mo-O-Mo and MoO bonds. Nanorods were observed in the SEM images in the case of MoO₃ films prepared above 250 °C. The films prepared at 250 °C exhibit maximum anodic diffusion coefficient of 9.61 × 10⁻¹¹ cm²/s. The same film exhibits the change in optical transmission of 58.4% at 630 nm with the optical density of 0.80.     

Effect of WO3 on structural and optical properties of CeO2-PbO-B2O3 glasses

Pure and WO₃ doped CeO₂-PbO-B₂O₃ glasses are prepared by the melt-quench technique. The structural and optical analyses of glasses are carried out by XRD, FTIR, density and UV-vis spectroscopic measurement techniques. FTIR analysis indicates the transformation of structural units of BO₃ into BO₄ with W-O-W vibration and the presence of WO₄ and WO₆ units observed with increase in WO₃ contents. Decrease in band gap for CeO₂-PbO-B₂O₃ glasses from 2.89 to 2.30 eV and for WO₃ doped glasses from 2.89 to 1.95 eV has been observed and discussed. This decrease in band gap with WO₃ doping approaches to semiconductor behavior. It shows that the presence of WO₃ in the glass samples causes more compaction of the borate network due to the formation of BO₄ groups and the presence of WO₄ and WO₆ groups, which result in a decrease in the optical band gap energy and increase in the density.     

Chemical and structural analysis of low-temperature excimer-laser annealing in indium-tin oxide sol-gel films

We investigated the influence of excimer-laser annealing (ELA) on the electrical, chemical, and structural properties of indium–tin oxide (ITO) films prepared by a solution process. The ITO film was prepared by the sol-gel method and annealed by excimer-laser pulses with an energy density up to 240?mJ/cm². Hall measurements showed that the ELA substantially enhanced the electrical properties of the ITO films, including their resistivity, carrier density, and mobility, as increasing the laser energy density. In-depth x-ray photoelectron spectroscopy analysis of the chemical states in the film surface showed that the ELA reduced carbon species and promoted both an oxidation and crystallization. These changes were consistent with results of x-ray diffraction and transmission electron microscopy measurements, where expansions in the microcrystal growth were observed for higher laser energy density. We comprehensively understand that the chemical rearrangement and concomitant crystallization are the main factors for achieving the electrical properties during the ELA. These results suggest the potential of the ELA-treated sol-gel films for providing high-quality ITO films at low temperatures toward the flexible device applications.     

The nature of antimony-enriched surface layer of Fe-Sb mixed oxides

Antimony segregation is a common feature in Fe-Sb mixed oxides, which have been widely applied as catalysts in selective oxidation and ammoxidation reactions. This paper attempts to shed a light on the cause of such a common feature and on the nature of the antimony-enriched surface layer over FeSbO₄ by means of XPS surface analysis. Single-phase FeSbO₄ samples prepared by different methods were studied, and the antimony in their surface layer is a mixture of both Sb⁵⁺ and Sb³⁺ rather than single Sb⁵⁺. Their surface composition is close to FeSb₂O₆, which could be described as (FeSbO₄)(Sb₂O₄)_δ, δ = 0.5, and it is not “Fe(II)Sb(V)₂O₆” as suggested in literature. Fe-Sb mixed oxides with Sb/Fe > 1 (mol/mol) are mixtures of FeSbO₄ and Sb₂O₄, and the surface of FeSbO₄ grains would be a layer of (FeSbO₄)(Sb₂O₄)_δ, δ ≥ 0.5. Fe-Sb mixed oxides with Sb/Fe < 1 are mixtures of FeSbO₄ and Fe₂O₃, and the surface of FeSbO₄ grains would be a layer of (FeSbO₄)(Sb₂O₄)_δ, δ ≤ 0.5, but the remaining Fe₂O₃ would be encapsulated by a layer of FeSbO₄.     

Physical foundations of the oxide cathodes

A novel explanation of the low values of work function in case of activated (partly deoxidized) polycrystalline oxides of alkali and alkaline earth metals is offered. Use of the metallic plasma model to the conducting oxides leads to the following values (in eV): 1.00, 1.67, 1.50, 1.44, 1.46 and 1.59 for activated Cs₂O, CaO, SrO, BaO, Y₂O₃ and La₂O₃, respectively. The main reason of low work function of the oxide cathodes is very low density of free electrons in the emitting surface layer.     

A model for the transition in the oxidation of zirconium-base alloys

At a weight gain of approximately 20 to 30 mg/dm² during the oxidation of zirconium-base alloys at reactor operating temperatures the oxidation rate accelerates. This is the so-called transition. A mechanistic model has been developed to describe the transition based on the growth and interconnection of small pores along the oxide-metal interface. Once the pores interconnect, coolant can reach the oxide-metal interface and oxidation accelerates. The model has been programmed and incorporated into the previously reported oxidation model. Good agreement has been obtained between the model predictions and experimental data.     

Zr催化剂对NaAlH4和Na3AlH6可逆储氢性能的影响

采用基于密度泛函理论的平面波赝势方法,分别计算纯净的以及掺杂Zr的NaAlH₄和Na₃AlH₆的晶格结构常数、能量、电子局域函数和电子态密度.结果表明：NaAlH₄和Na₃AlH₆分别是带隙为46和31 eV的绝缘体;NaAlH₄和Na₃AlH₆中Al—H键是共价键,Na—H键是离子键;Zr原子替代Na原子 关键词： 储氢 4')" href="#">NaAlH₄ 3AlH₆')" href="#">Na₃AlH₆ Zr掺杂     

Ab-initio density functional theory study of a WO3 NH3-sensing mechanism

WO 3 bulk and various surfaces are studied by an ab-initio density functional theory technique.The band structures and electronic density states of WO 3 bulk are investigated.The surface energies of different WO 3 surfaces are compared and then the (002) surface with minimum energy is computed for its NH 3 sensing mechanism which explains the results in the experiments.Three adsorption sites are considered.According to the comparisons of the energy and the charge change between before and after adsorption in the optimal adsorption site O 1c,the NH 3 sensing mechanism is obtained.     

Effects of annealing on structural and morphological properties of e-beam evaporated AgGaSe2 thin films

Polycrystalline AgGaSe₂ thin films were deposited by using single crystalline powder of AgGaSe₂ grown by vertical Bridgman-Stockbarger technique. Post-annealing effect on the structural and morphological properties of the deposited films were studied by means of X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS) and scanning electron microscopy (SEM) with energy dispersive X-ray analysis (EDXA) measurements. XRD analysis showed that as-grown films were in amorphous structure, whereas annealing between 300 and 600 °C resulted in polycrystalline structure. At low annealing temperature, they were composed of Ag, Ga₂Se₃, GaSe, and AgGaSe₂ phases but with increasing annealing temperature AgGaSe₂ was becoming the dominant phase. In the as-grown form, the film surface had large agglomerations of Ag as determined by EDXA analysis and they disappeared because of the triggered segregation of constituent elements with increasing annealing temperature. Detail analyses of chemical composition and bonding nature of the films were carried out by XPS survey. The phases of AgO, Ag, Ag₂Se, AgGaSe₂, Ga, Ga₂O₃, Ga₂Se₃, Se and SeO₂ were identified at the surface (or near the surface) of AgGaSe₂ thin films depending on the annealing temperature, and considerable changes in the phases were observed.     

Nanostructured WO3 thin film as a new anode material for lithium-ion batteries

Nanostructured WO₃ thin film has been successfully fabricated by radio-frequency magnetron sputtering method and its electrochemistry with lithium was investigated for the first time. The reversible discharge capacity of WO₃/Li cells cycled between 0.01 V and 4.0 V was found above 626 mAh/g during the first 60 cycles at the current density 0.02 mA/cm². By using X-ray diffraction, X-ray photoelectron spectroscopy, transmission electron microscopy and selected-area electron diffraction measurements, the reversible conversion of WO₃ into nanosized metal W and Li₂O was revealed. The high reversible capacity and good recyclability of WO₃ electrode made it become a promising cathode material for future rechargeable lithium batteries.     

Fabrication of pulsed-laser deposited V-W-Nd mixed-oxide films

V-W-Nd mixed-oxide films were prepared by pulse-laser deposition (PLD) technique from the targets sintered at different temperatures. X-ray photoelectron spectroscopy (XPS) data indicate that the films fabricated from the targets sintered at low temperature were composed of various mixed valences. Raman spectroscopy shows that V-W-Nd films were composed of the vanadates as NdVO₄, and the W⁶⁺ doping supplements the formation of vanadate. Atomic force microscopy (AFM) image of the films fabricated from the target sintered at 923 K reveals the average particle size is estimated around 86 nm. The surface morphology of the films roughness shows a dramatic change at 923-943 K.     

SEM and TEM analysis of composite of ZrO2-Ti system

3Y-ZrO₂-Ti composites obtained by slip casting method were studied by means of X-ray diffraction (XRD), scanning electron microscopy (SEM) and transmission electron microscopy (TEM). Moreover, the Vickers hardness was measured. The experiments show the complex microstructure of composites. The tetragonal zirconium dioxide (t-ZrO₂) and monoclinic zirconium dioxide (m-ZrO₂) as a composite matrix were detected at XRD analysis. SEM observations revealed that Ti -rich phase are uniform distributed in composites. Moreover, the large and very fine precipitations were found. The very fine Ti rich precipitations were located at ZrO₂ grain boundaries as well as in the triple-points. TEM experiments confirmed that in the sintered composites 3Y-ZrO₂ – 10%Ti the uniaxial ZrO₂ grains (100–600 nm), fine monoclinic martensitic plates and fine round monoclinic particles (20–40 nm) of ZrTiO₂ phase were exist. The complex microstructures of 3Y-ZrO₂-Ti composites have a high hardness as a result of existing fine ZrTiO₂ and other Ti oxides precipitations.     

Preparation of WO3 nanoparticles and application to NO2 sensor

WO₃ nanoparticles were prepared by evaporating tungsten filament under a low pressure of oxygen gas, namely, by a gas evaporation method. The crystal structure, morphology, and NO₂ gas sensing properties of WO₃ nanoparticles deposited under various oxygen pressures and annealed at different temperatures were investigated. The particles obtained were identified as monoclinic WO₃. The particle size increased with increasing oxygen pressure and with increasing annealing temperature. The sensitivity increased with decreasing particle size, irrespective of the oxygen pressure during deposition and annealing temperature. The highest sensitivity of 4700 to NO₂ at 1 ppm observed in this study was measured at a relatively low operating temperature of 50 °C; this sensitivity was observed for a sensor made of particles as small as 36 nm.