Interface morphologies and magnetization characteristics of Co70Fe30 thin films deposited on conjugated polymer thin films

The surface and interface morphology and magnetization characteristics of Co₇₀Fe₃₀ thin films deposited on bare glass and p-Si/SiO₂ substrates and on conjugated polymer poly(3-hexylthiophene-2,5-diyl) (P3HT) thin films on such substrates have been studied by atomic force microscopy and magneto-optic Kerr effect. It was found that the average absolute magnitude of the coercive field of Co₇₀Fe₃₀ correlates with the roughness of the underlayer prior to Co₇₀Fe₃₀ deposition. P3HT deposited on p-Si/SiO₂ substrates possesses an increased surface roughness as compared to the p-Si/SiO₂ surface, but displays a decreased surface roughness as compared to the one of a bare glass substrate.     

Charge transport diagnosis by: I-V (resistivity), screening and Debye length, mean free path, Mott effect and Bohr radius in InAs, In0.53Ga0.47As and GaAs MBE epitaxial layers

We propose using collected galvano-magnetic data on MBE samples of n-type undoped epi-layers of InAs, In_0.57Ga_0.47As and GaAs on InP semi-insulating and GaAs semi-insulating substrates to characterize their charge transport properties. Hall concentration and resistance measurements vs. temperature were carried out, and these results allowed us to calculate the mean free path and magnetic length. However, they are mono-crystalline, they present multi-component charge transport structures. The characterization of these layers by means of a combined analysis of galvano-magnetic properties, I-V (resistivity), screening and Debye length, mean free path, Mott effect and Bohr radius characteristics gave new and very interesting results.The application of a previously described method of analysis also allows for the presence of a Mott transition to be determined. The presence of a Mott transition leads to the hypothesis that a part of conductance in such layers, especially at low temperatures may be due to an impurity band.We suppose either that during their epitaxial growth all of the investigated layers were unintentionally doped with excess atoms of one component, vacancies of other or that dangling bonds are present. Therefore, in the range of low temperatures, the possible and dominant conduction mechanism is conduction via such defects, with electrons moving by thermally activated hopping.     

Luminescent mechanism of Y2SiO5:Ce phosphor powder

A luminescent mechanism was constructed for the broad band emission spectra of the X₁ phase of the Y₂SiO₅:Ce phosphor powder. Four Gaussian peaks fit to the cathodoluminescent (CL) and photoluminescent (PL) spectra were attributed to the two different sites (A1 and A2) of the Ce³⁺ ion in the host matrix and the difference in orientation of the neighbour ions in the complex crystal structure. Each Ce³⁺ site gives rise to transitions from the 5d to the two (therefore two peaks) 4f energy levels (²F_5/2 and ²F_7/2 due to crystal field splitting). Energy transfer from other defect levels in the matrix was also observed.     

A comparative study of the physical properties of Sb2S3 thin films treated with N2 AC plasma and thermal annealing in N2

As-deposited antimony sulfide thin films prepared by chemical bath deposition were treated with nitrogen AC plasma and thermal annealing in nitrogen atmosphere. The as-deposited, plasma treated, and thermally annealed antimony sulfide thin films have been characterized by X-ray diffraction (XRD), energy dispersive X-ray spectroscopy, scanning electron microscopy, atomic force microscopy, UV-vis spectroscopy, and electrical measurements. The results have shown that post-deposition treatments modify the crystalline structure, the morphology, and the optoelectronic properties of Sb₂S₃ thin films. X-ray diffraction studies showed that the crystallinity of the films was improved in both cases. Atomic force microscopy studies showed that the change in the film morphology depends on the post-deposition treatment used. Optical emission spectroscopy (OES) analysis revealed the plasma etching on the surface of the film, this fact was corroborated by the energy dispersive X-ray spectroscopy analysis. The optical band gap of the films (E_g) decreased after post-deposition treatments (from 2.36 to 1.75 eV) due to the improvement in the grain sizes. The electrical resistivity of the Sb₂S₃ thin films decreased from 10⁸ to 10⁶ Ω-cm after plasma treatments.     

Quantum electronic transport: Linear and nonlinear conductance from the Keldysh approach

This is a review of the derivation of the Landauer conductance using the Keldysh non-equilibrium Green's function (NEGF) formalism and the equations-of-motion (EOM) method. We consider the elastic quantum electronic transport through a multi-lead device and treat the conductor in the mean-field approximation. This is suitable for open quantum dots as well as for several molecular systems where charging effects are negligible. The focus of the presentation is to unveil the technical issues involved in the formalism. We show how the Landauer conductance emerges as a linear term in the current-voltage I-V characteristics and indicate how to go beyond this regime. We address the connection of the NEGF approach to recent developments in molecular transport and discuss the problems that arise when one tries to include interaction effects beyond the mean field.     

Measurement of multi-wavelength optical amplifier by using the I/O power-curve fitting technique

A low-cost and accurate measurement scheme for characterizing multi-wavelength optical amplifiers is experimentally demonstrated by using an amplified spontaneous emission source and a DWDM multiplexer. By linearly fitting the input and output optical spectral densities, the gain and noise figure of the optical amplifier are determined. The measured results agree well with the data obtained by time-domain-extinction method.     

Observation of higher magnetization on the substitution of Al for Co in La2MnCoO6

Upon substitution of non-magnetic Al³⁺ for diamagnetic, low-spin, Co³⁺ in ferromagnetic La₂MnCoO₆, the ferromagnetic moment, measured at 82 K and 15 kOe, is found to increase initially with Al content and then decreases, though the magnetic transition temperature decreases continuously on increasing x in La₂MnCo_1−xAl_xO₆.     

Structural phase transitions in the layered bismuth oxide BaBi4Ti4O15

The structure of the n=4 Aurivillius oxide BaBi₄Ti₄O₁₅ has been studied at room temperature using powder neutron diffraction, and from 300 to 1000 K using synchrotron X-ray diffraction methods. The structure is orthorhombic (space group A2₁am) at 300 K and transforms to a tetragonal (I4/mmm) structure near 700 K.     

Dielectric relaxation in single crystal NH4H2PO4 in the high-temperature regime

The dispersion curves of the dielectric response in single crystal NH₄H₂PO₄ were obtained in the radio frequency range and below the high-temperature transition at T_p−160 °C. The results reveal dielectric relaxation at low frequency, which is about 10⁵ Hz at 70 °C, and it shifts to higher frequencies (∼3×10⁶ Hz) as the temperature increases. The relaxation frequency was determined from the peak obtained in the imaginary part of the permittivity as well as from the derivative of the real part of the permittivity. The activation energy E_a=0.55 eV, obtained from the relaxation frequency is very close to that derived from the dc conductivity. We suggest that this dielectric relaxation could be due to the proton jump and phosphate reorientation that cause distortion and change the local lattice polarizability inducing dipoles like      

Crystallization-dependent magnetic properties of Mn1.56Co0.96Ni0.48O4 thin films

The effects of magnetic property dependence of the Mn_1.56Co_0.96Ni_0.48O₄ (MCN) films on crystallization are investigated in the growth temperature of 450-750 °C. With the growth temperature increase, both the crystalline quality and the grain size improve. The MCN films exhibit paramagnetic to ferromagnetic transition and the paramagnetic parts fit to the modified Curie-Weiss law. The ferromagnetic couplings of the magnetic ions in the MCN films enhance at elevated growth temperature. The saturation magnetization at 5 K increases with increasing growth temperature, but coercive field decreases monotonously. The magnetic properties of the MCN films strongly depend on their microstructures.     

L12 phase formation and giant exchange anisotropy in Mn3Ir/Co–Fe bilayers

The degree of order S of Mn–Ir layers and the exchange anisotropy of Mn–Ir/Co–Fe bilayers were investigated for various chemical compositions of Mn–Ir layers, underlayer materials, and underlayer thicknesses. It was found that: (1) The compositional range over which L1₂-phase Mn₃Ir could be formed is 22–32 at% Ir and giant exchange anisotropy is obtained in this range. (2) Ru is favorable as an underlayer material for avoiding interdiffusion with the Mn–Ir layer during deposition on the temperature elevated substrate. (3) The underlayer thickness could be reduced to 5 nm while maintaining a giant exchange anisotropy in excess of 1 erg/cm².     

Ferromagnet/superconducting YBa2Cu3O7−δ bilayer devices

A magnetic fringe-field effect has been investigated for a simple bilayer device structure consisting of a Co_0.9Fe_0.1 film and an epitaxial YBa₂Cu₃O_7−δ (YBCO) film patterned as a microbridge. The resistance of the bridge is measured with a four-probe technique and is found to depend on the orientation of a magnetic field, which is externally applied in the device plane. A maximum (minimum) of the resistance occurs when the magnetic field is applied in parallel (perpendicular) to the bridge axis. The difference between the maximum and the minimum is very large for a small range of temperature below the critical temperature of the YBCO film. The observed features in the resistance are qualitatively explained by vortex motion in the YBCO bridge under the influence of the magnetic fringe-field of the Co_0.9Fe_0.1 film.     

Magnetic properties and microstructure study of high coercivity Au/FePt/Au trilayer thin films

High-coercivity Au(60 nm)/FePt(δ nm)/Au(60 nm) trilayer samples were prepared by sputtering at room temperature, followed by post annealing at different temperatures. For the sample with δ=60 nm, L1₀ ordering transformation occurs at 500 °C. Coercivity (H_c) is increased with the annealing temperature in the studied range 400–800 °C. The H_c value of the trilayer films is also varied with thickness of FePt intermediate layer (δ), from 27 kOe for δ=60 nm to a maximum value of 33.5 kOe for δ=20 nm. X-ray diffraction data indicate that the diffusion of Au atoms into the FePt L1₀ lattice is negligible even after a high-temperature (800 °C) annealing process. Furthermore, ordering parameter is almost unchanged as δ is reduced from 60 to 15 nm. Transmission electron microscope (TEM) photos indicate that small FePt Ll₀ particles are dispersed amid the large-grained Au. We believe that the high coercivity of the trilayer sample is attributed to the small and uniform grain sizes of the highly ordered FePt particles which have perfect phase separation with Au matrix.     

Conductivity behaviour of a cubic/tetragonal phase stabilized nanocrystalline La2O3-ZrO2

La₂O₃ doped nanocrystalline zirconia (ZrO₂) was prepared by chemical co-precipitation method for the 3, 5, 8, 10, 15, 20 and 30 mol.% concentrations of La₂O₃. Structural studies were performed using X-ray diffraction (XRD). All the as-synthesized samples were found to be in monoclinic phase. As-synthesized samples were given heat treatment at higher temperatures for tetragonal/cubic structural phase stabilization. Sintering the samples at temperature 1173 K stabilized the tetragonal and cubic phases. A slight shift in the 100% peak of the cubic phase was observed towards the low diffraction angle indicating the substitution of the bigger La³⁺ ion into the ZrO₂ lattice. Grain sizes were found to lie between 10 and 13 nm. Electrical conductivity studies were performed on the cubic phase stabilized La₂O₃-ZrO₂ by complex impedance spectroscopy. The conductivity increases up to the dopant concentration 10 mol.% and then decreases with further increase in La₂O₃ concentration. Initial increase in conductivity is correlated to the stabilization of the cubic phase and the subsequent decrease in the conductivity with the dopant content is interpreted on the basis of the oxygen-ion movement model. Electrical conductivity has contributions from grain and grain boundary regions. But the grain boundary conductivity is slightly higher than the corresponding grain conductivity. Higher grain boundary conductivity shows higher diffusion coefficient for the atoms on the surface of the ZrO₂ grains. The possible mechanism of the oxygen ion conduction in the La₂O₃ stabilized zirconia (LSZ) is reported. The Barton, Nakajima and Namikawa (BNN) relation has been applied to the conductivity data and found that the d.c. and a.c. conductions have been correlated to each other by the same mechanism.     

Electrical conductivity and complex impedance analysis of 20% Ti-doped La0.7Sr0.3MnO3 perovskite

The electrical conductance of 20% Ti-doped La_0.7Sr_0.3MnO₃ (LSMO) was measured using admittance spectroscopy over a wide temperature and frequency ranges. The impedance plane plot shows semicircle arcs at different temperatures and an electrical equivalent circuit has been proposed to explain the impedance results. Activation energy inferred from conductance spectrum matches very well with the value estimated from relaxation time indicating that relaxation process and conductivity have the same origin. The electrical conductance of La_0.7Sr_0.3Mn_0.8Ti_0.2O₃ is found to be dependent on temperature and frequency. Also, the electronic conduction appears to be dominated by thermally activated hopping of small polaron (SPH) at high temperatures and by variable range hopping (VRH) at low temperatures.     

Polarized neutron reflectometry of the influence of Fe/Si,Fe/FeSi2 and Au/Fe interfaces on the magnetic properties of epitaxial Fe films

The magnetic and structural properties of epitaxial Fe films grown on Si(1 1 1) are investigated by polarized neutron reflectometry (PNR) at room temperature. The influence of different types of interfaces, Fe/Si, Fe/FeSi₂ and Au/Fe on the magnetic properties of Fe films deposited by molecular beam epitaxy onto Si(1 1 1) are characterized. We observe a drastic reduction of the magnetic moment in the entire Fe film deposited directly on the silicon substrate essentially due to strong Si interdiffusion throughout the whole Fe layer thickness. The use of a silicide FeSi₂ template layer stops the interdiffusion and the value of the magnetic moment of the deposited Fe layer is close to its bulk value. We also evidence the asymmetric nature of the interfaces, Si/Fe and Fe/Si interfaces are magnetically very different. Finally, we show that the use of Au leads to an enhancement of the magnetization at the interface.     

First-principles calculations on the pressure induced zircon-type to scheelite-type phase transition of CaCrO4

The zircon-type and scheelite-type CaCrO₄ are investigated by first-principles calculations based on density-functional theory. The calculated zircon-type lattice parameters and the oxygen positions are in agreement with the experimental results and those of scheelite-type structure are studied for the first time in this work. The theoretical phase transition pressure of CaCrO₄ from zircon phase to scheelite phase is about 5.8 GPa, which is consistent with the experimental observation. From the density of states and the electronic band structures, CaCrO₄ is an insulator with a direct band gap (2.16 eV) for zircon-type structure and an indirect band gap (1.98 eV) for scheelite-type structure. The bulk moduli of the two phases are evaluated from the Murnaghan equation fit to the total energies as a function of the unit cell volume.     

Characterization of Cr/SiO2 catalysts and ethylene polymerization by XPS

Cr/SiO₂ catalysts with 1 or 3 wt.% Cr loadings and different chromium precursors were characterized by X-ray photoelectron spectroscopy (XPS) and X-ray diffraction (XRD). A method to determine chromium species in the sample was developed through the decomposition of the Cr 2p XPS spectrum in Cr⁶⁺ and Cr³⁺ standard spectra. The results of the binding energy from the Cr 2p region and of the distribution of chromium species allowed to evaluate the dynamic photo-reduction of the surface chromium species during XPS analysis. Photo-reduction of surface Cr⁶⁺ to Cr³⁺ species was verified for all samples supported in silica, depending on the precursor and chromium content. Bulk CrO₃ and Cr₂O₃ standards did not reveal variation in the binding energy of Cr 2p_3/2, but a physical mixture of CrO₃ with SiO₂ presented photo-reduction. The behavior of this mixture resembled to the catalysts and suggests the participation of the surface hydroxyls of silica in the photo-reduction process. XPS intensity measurements for assessing dispersion of chromium oxide were used to compare the calcined and reduced catalysts to different chromium precursors. Polyethylene chains were detected by in situ XPS, while oligomerization products were not observed.     

Influence of electron-electron scattering on electron relaxation rates in three and four-level quantum cascade lasers in magnetic fields

The aim of this work is to calculate carrier relaxation rates from the upper laser level due to electron-electron interactions in three and four-level quantum cascade lasers (QCLs) in a strong magnetic field. The comparison between calculated results and previously obtained values for acoustical and optical-phonon scattering processes indicates that carrier-carrier scattering might have noticeable influence on laser output properties, depending on the structural design. Numerical results are presented for two λ ∼ 9 μm GaAs-based QCLs in magnetic fields between 20 T and 60 T and the band nonparabolicity is taken into account.