Orientation-dependent ionization potential of CuPc and energy level alignment at C60/CuPc interface

The electronic structure evolution of interfaces of fullerene (C₆₀) with copper phthalocyanine (CuPc) on highly oriented pyrolytic graphite (HOPG) and on native silicon oxide has been investigated with ultraviolet photoemission spectroscopy and inverse photoemission spectroscopy. The LUMO edge of C₆₀ was found to be pinned at the interface with CuPc on SiO₂. A substantial difference in the electron affinity of CuPc on the two substrates was observed as the orientation of CuPc is lying flat on HOPG and standing up on SiO₂. The ionization potential and electron affinity of C₆₀ were not affected by the orientation of CuPc due to the spherical symmetry of C₆₀ molecules. We observed band bending in C₆₀ on the standing-up orientation of CuPc molecules, while the energy levels of C₆₀ on the flat-lying orientation of CuPc molecules were observed to be flat. The observation points to a dependence of photoexcited charge transfer on the relative molecular orientation at the interface.     

Energy level alignment between C60 and Al using ultraviolet photoelectron spectroscopy

The energy level alignment between C₆₀ and Al has been investigated by using ultraviolet photoelectron spectroscopy. To obtain the interfacial electronic structure between C₆₀ and Al, C₆₀ was deposited on a clean Al substrate in a stepwise manner. The valence-band spectra were measured immediately after each step of C₆₀ deposition without breaking the vacuum. The measured onset of the highest occupied molecular orbital energy level was located at 1.59 eV from the Fermi level of Al. The vacuum level was shifted 0.68 eV toward lower binding energy with additional C₆₀ layers. The observed vacuum level shift means that the interface dipole exists at the interface between C₆₀ and Al. The barrier height of electron injection from Al to C₆₀ is 0.11 eV, which is smaller value than that of hole injection.     

FePc与TiO2(110)及C60界面电子结构研究

基于C₆₀受体和有机分子给体的太阳能电池是目前非常重要的一个研究热点, 利用同步辐射真空紫外光电子能谱(SRUPS) 技术研究了酞菁铁(FePc)与TiO₂(110)及C₆₀的界面电子结构, 以及FePc与C₆₀分子混合薄膜的电子结构. SRUPS价带谱显示, FePc沉积在化学计量比与还原态两种不同的TiO₂(110)表面时, FePc分子的HOMO能级均随FePc厚度的变化发生了移动, 而在化学计量比的TiO₂(110)表面位移较大, 同时发生界面能带弯曲, 说明存在从有机层向衬底的电子转移. 在FePc/C₆₀和C₆₀/FePc界面形成过程中, FePc与C₆₀分子的最高占据分子轨道(HOMO)位移大小基本相同. 由界面能级排列发现, 在FePc与C₆₀的混合薄膜中, FePc分子的HOMO与C₆₀分子的最高占据分子轨道能级差较大, 这有利于提高器件开路电压, 改善器件性能.     

Effects of rubrene mixing on the electronic structures of donor/acceptor interface in organic photovoltaic device

Rubrene mixing has been shown to be an effect mean for enhancing both the open circuit voltage (Voc) and the short-circuit current (Jsc) of copper-phthalocyanine (CuPc)/fullerene (C₆₀) based solar cell. While the increase in Jsc can be readily explained by the additional rubrene absorption and the introduction of a bulk heterojunction; causes for Voc increase are still not clear. The energy offset between the highest occupied molecular orbital (HOMO) level of donor and the lowest unoccupied molecular orbital (LUMO) level of acceptor (HOMO_D-LUMO_A) at the CuPc/C₆₀ interface was found to increase substantially upon rubrene mixing in either side of the interface. As the HOMO_D-LUMO_A is generally considered to limit the Voc, its increase agrees well with the device results. Energy level bending and associated built-in electric fields were also observed and their possible implications to device performance are discussed.     

Dipoles and band alignment for benzene/Au(111) and C<Subscript>60</Subscript>/Au(111) interfaces

A local orbital DFT-approach combined with a “scissor”-operator is used to obtain the Charge Neutrality Level and the screening parameter in the benzene/Au(111) and C₆₀/Au(111) interfaces. The “pillow” dipole and interface Fermi level are also calculated. The total dipole induced across the interface is compared with the experimental evidences: while the agreement for C₆₀/Au(111) is excellent, for benzene/Au(111), some discrepancies appear that are discussed in the light of other models.     

Susceptibility and electric dipole in metal C 60 compounds

The permanent electric dipole moment of metal atom-C₆₀ compounds is measured. A column (alkali) and a row (transition metals) of the periodic table are systematically investigated. Most of the experimental results are obtained at high temperature when the atom is mobile on the C₆₀ cage. For a given example (NaC₆₀), the dipole moment is also measured by a different method at low temperature and both results are consistent. For alkali, the results are compared to ab initio calculations. A good agreement is obtained, both for absolute values and for the evolution of the bonding in the alkali column. For transition metals, the relative values of the dipole moments are in qualitative agreement with the ionic character of the compounds.     

Charge-transfer at silver/phthalocyanines interfaces

Valence band photoemission spectroscopy (VB-PES) and inverse photoemission spectroscopy (IPES) were employed to determine the occupied and unoccupied density of states upon silver deposition onto layers of two phthalocyanines (H₂Pc and CuPc). The two different Pc molecules give rise to very distinct behaviour already during the initial stage of silver deposition. While in the CuPc case no shift occurs in the energy levels, the H₂Pc highest occupied molecular orbital (HOMO) and lowest unoccupied molecular orbital (LUMO) are shifting simultaneously by 0.3 eV, i.e., the HOMO shifts away from the Fermi level while LUMO shifts towards the Fermi level. As the silver quantity increases the HOMO levels of both Pcs are shifting towards the Fermi level. When the Fermi level is resolved in the VB spectra, the characteristic features of H₂Pc and CuPc are smeared out to some extent. Shifts in HOMO and LUMO energy positions as well as changes in line shapes are discussed in terms of charge-transfer and chemical reactions at the interfaces.     

Organic Photovoltaic Cells with Improved Performance Using Bathophenanthroline as a Buffer Layer

采用Bphen作为缓冲层,研究Bphen处在电子受体材料C₆₀和阴极Ag之间对有机薄膜光伏电池(OPV)性能的影响．通过引入2.5nm厚的Bphen,在100 mW/cm²光照下,CuPc/C₆₀结构的器件效率从0.87%提高到2.25%． 对光生电流-电压的分析表明,Bphen缓冲层可以有效的提高电子从C₆₀层向Ag阴极的传输能力和平衡器件中载流子的传输能力．系统研究了Bphen厚度对OPV器件性能的影响,发现随着Bphen厚度的增加,电导率的降低是限制器件性能的主要原因．此外,采用紫外-可见光分光光度计测试了器件的吸收光谱,发现Bphen缓冲层可以增强CuPc/C₆₀的光吸收能力．     

Probing the interaction at the C60-SiC nanomesh interface

Synchrotron-based high-resolution photoemission spectroscopy (PES) and in situ scanning tunneling microscopy (STM) are used to investigate the interaction at the C₆₀-SiC nanomesh interface during the sequential deposition and subsequent desorption of C₆₀ molecules. A weak charge transfer occurs at the C₆₀-nanomesh interface, involving electrons transferring from nanomesh to C₆₀ overlayer. The interface interaction originated from the weak charge transfer at the C₆₀-nanomesh interface is stronger than C₆₀ intermolecular interaction (e.g., van-der-Waals force), facilitating the layer-by-layer growth for the first two layers of C₆₀ on SiC nanomesh. The highly corrugated nanomesh surface results in an anisotropic diffusion and high diffusion barrier of C₆₀ on top, and thereby leads to the formation of irregularly shaped C₆₀ islands under submonolayer condition. In contrast, C₆₀ diffusion on HOPG and Ag(1 1 1) surfaces is rather isotropic, resulting in the formation of hexagonally shaped C₆₀ islands with smooth domain boundaries. STM results show the partial desorption of C₆₀ molecules from the SiC nanomesh surface after annealing the 1 ML C₆₀ sample (complete wetting layer of C₆₀ on SiC nanomesh) at around 150 °C for 20 min. Thorough desorption of C₆₀ molecules and full recovery of the clean SiC nanomesh are observed after annealing at around 200 °C for 20 min. In situ PES and STM experiments clearly demonstrate that C₆₀ adsorption and desorption processes do not affect the underlying SiC nanomesh structure, revealing its thermal stability and chemical inertness to C₆₀ molecules.     

On interface dipole layers between C60 and Ag or Au

C₆₀ layers on polycrystalline Ag and Au are studied by photoelectron spectroscopy. At these metal/C₆₀ interfaces an electron transfer occurs from the metal to the lowest unoccupied orbital of C₆₀. We found in the case of the polycrystalline Ag/C₆₀ interface a dipolar layer with its associated electric field in the direction corresponding to the charge transfer, so pointing from the substrate to the adsorbent. Yet, at the Au/C₆₀ interface we observed an overall electric field pointing from C₆₀ towards the metal. We discuss our observations in terms of charge transfer, screening and hybridization effects and propose the occurrence of a hybridization mechanism similar to back-bonding at the Au/C₆₀ interface. We show that the alignment of energy levels at the metal/C₆₀ interface cannot simply be deduced using the metal workfunction and the frontier orbitals of C₆₀, including screening effects, since hybridization effects may strongly alter the interfacial energy level structure. Our experimental findings on the polycrystalline metal/C₆₀ interfaces indicate an at-most weak dependence of the Fermi level of the C₆₀ overlayer on the workfunction of the polycrystalline metal substrate. These interfaces are found in donor–acceptor-based organic photovoltaic devices and our results may help to understand the electrical characteristics of these devices. Received: 26 September 2001 / Accepted: 15 January 2002 / Published online: 3 June 2002     

4,4′,4″-三(N-3-甲基苯基-N-苯基氨基)三苯胺掺杂MoOx作为空穴传输层对有机太阳电池性能的影响

通过采用4,4′,4″-三(N-3-甲基苯基-N-苯基氨基)三苯胺 (m-MTDATA)掺入MoO_x作为器件的空穴传输层来提高酞菁铜(CuPc)/C₆₀小分子 有机太阳电池的效率. 采用真空蒸镀的方法制备了一系列器件, 其中结构为铟锡氧化物 (ITO)/m-MTDATA:MoO_x(3:1)(30 nm)/CuPc(20 nm)/C₆₀(40 nm)/4,7-二苯 基-1,10-菲罗啉 (Bphen)(8 nm)/LiF(0.8 nm)/Al(100 nm)的器件, 在AM1.5 (100 mW/cm²)模拟太阳光的照射条件下, 开路电压V_oc=0.40 V, 短路电流J_sc=6.59 mA/cm², 填充因子为0.55, 光电转换效率达1.46%, 比没有空穴传输层的器件ITO/CuPc(20 nm)/C₆₀(40 nm)/Bphen(8 nm)/LiF(0.8 nm)/Al(100 nm) 光电转换效率提高了38%. 研究表明, 加入m-MTDATA:MoO_x(3:1)(30 nm)空穴传输层减小了有机层和ITO电极之间的接触电阻, 从而减小了整个器件的串联电阻, 提高了器件的光电转换效率.     

Stable organic solar cells employing MoO3-doped copper phthalocyanine as buffer layer

A stable organic solar cell with structure of ITO/buffer/donor/acceptor/cathode is presented. A thin layer (5 nm) of MoO₃-doped CuPc is adopted as the buffer in CuPc/C₆₀ organic heterojunction photovoltaic (PV) solar cells, resulting in two times longer lifetime. The surface morphology of buffer layer plays a decisive role in improving the stability.     

Structural and electronic implications for carrier injection into organic semiconductors

We report on the structural and electronic interface formation between ITO (indium-tin-oxide) and prototypical organic small molecular semiconductors, i.e., CuPc (copper phthalocyanine) and α-NPD (N,N′-di(naphtalen-1-yl)-N,N′-diphenyl-benzidine). In particular, the effects of in situ oxygen plasma pretreatment of the ITO surface on interface properties are examined in detail: Organic layer-thickness dependent Kelvin probe measurements revealed a good alignment of the ITO work function and the highest occupied electronic level of the organic material in all samples. In contrast, the electrical properties of hole-only and bipolar organic diodes depend strongly on the treatment of ITO prior to organic deposition. This dependence is more pronounced for diodes made of polycrystalline CuPc than for those of amorphous α-NPD layers. X-ray diffraction and atomic force microscopic (AFM) investigations of CuPc nucleation and growth evidenced a more pronounced texture of the polycrystalline film structure on the ITO substrate that was oxygen plasma treated prior to organic layer deposition. These findings suggest that the anisotropic electrical properties of CuPc crystallites, and their orientation with respect to the substrate, strongly affect the charge carrier injection and transport properties at the anode interface.     

Scanning tunneling microscopy and spectroscopy investigations of copper phthalocyanine adsorbed on Al2O3/Ni3Al(1 1 1)

Low temperature scanning tunneling microscopy (LT-STM) and scanning tunneling spectroscopy (STS) have been used to investigate adsorbed copper phthalocyanine (C₃₂H₁₆N₈Cu) molecules on an ordered ultrathin Al₂O₃ film on the Ni₃Al(1 1 1) surface as a function of coverage and annealing temperature. For sub-monolayer coverage and a deposition temperature of 140 K two different planar molecular adsorption configurations rotated by 30° with respect to each other were observed with submolecular resolution in the STM images. The template effect of the underlying oxide film on the CuPc orientation, however, is only weak and negligible at higher coverages. For θ_CuPc ≈ 1 ML, before completion of the first layer, the growth of a second layer was already observed. The measured spacing of 3.5 Å between first and second layer corresponds to the distance between the layers in the α-modification of crystalline CuPc. The molecules deposited at 140 K are thermally stable upon prolonged annealing to temperatures up to 250 K. By the use of STS the lowest unoccupied molecular orbital (LUMO) of the adsorbed copper phthalocyanine molecules has been identified at an energy of 1.2 eV above E_F. The lateral distribution of the electronic states of the CuPc has been analyzed and mapped by STS.     

Low-temperature phase transformations in weakly doped quantum paraelectrics: novel features and quantum reentrant dipolar glass state in KTa0.982Nb0.018O3

An unusual sequence of phase transitions (PT) and reentrant dipole glass-like phase formation at low temperatures was found recently in KTaO₃ weakly doped with Li and Nb (K_0.9986Li_0.0014Ta_0.976Nb_0.024O₃) [Phys. Rev. B 63 (2001) 172]. We report on detailed low frequency (100 Hz-1 MHz) permittivity and Raman light scattering studies of similar composition, but without Li admixture, KTa_1−xNb_xO₃ with x=0.018 (KTN1.8). The aim of the study is to answer the question if the reentrant dipole glass-like phase exists in KTN1.8 and what is the microscopic origin of this phase. A detailed study of the sharp low-temperature PT observed at T_C∼27 K revealed properties inherent to the reentrant glass-type state at lower temperatures. The substitution of Nb for Ta influences the TO₁ soft lattice mode and leads to PT with the long-range ferroelectric ordering. A crossover to an order-disorder polar microregion dynamics with a non-standard ε′(T) behaviour and dipole glass-like formation were found below T_C (at ∼15 K), which is attributed to the randomness of the Nb distribution. A crossover to the long-range order was found under a dc bias field.     

Modification of the electronic properties of the TiO2 (1 1 0) surface upon deposition of the ultrathin conjugated organic layers

A few nm thick 3,4,9,10-perylenetetracarboxylic acid dianhydride (PTCDA) and Cu-phthalocyanine (CuPc) overlayers were thermally deposited in situ in UHV onto TiO₂ (1 1 0) surface. Atomic composition of the surfaces under study was monitored using Auger electron spectroscopy (AES). The formation of the interfacial potential barrier and the structure of the unoccupied electronic states located 5-25 eV above the Fermi level (E_F) was monitored using a probing beam of low-energy electrons according to the total current electron spectroscopy (TCS) method. The work function values upon the overlayer deposition changed from 4.6 to 4.9 eV at the PTCDA/TiO₂ (1 1 0) interface and from 4.6 to 4.3 eV at the CuPc/TiO₂ (1 1 0) interface. Band bending in the TiO₂ substrate, molecular polarization in the organic film and changes in the work function due to the change in the surface composition were found to contribute to the formation of the interfacial potential barriers. Oxygen admixture related peaks were observed in the AES and in the TCS spectra of the CuPc overlayers. A mechanism of the transformations in the PTCDA and CuPc overlayers on the TiO₂ (1 1 0) upon elevating temperature from 25 to 400 °C was suggested.     

Doping and photoelectric properties of C60 films prepared by ionized cluster beam deposition

60 films by means of ionized cluster beam (ICB) deposition. X-ray diffraction (XRD) measurement showed the C₆₀ films to be polycrystalline. The films show negative resistance–temperature coefficients, and their room-temperature resistivity is greater than 10² Ω cm. The films were implanted with 80-keV phosphorus, BBr₃, Ar, and He ions, under doses ranging up to 10¹⁶ cm^-2. The resistivity of the implanted films decreases with increasing doses. n-type electrical conduction was observed for phosphorus-implanted C₆₀ films. The interaction of impinging ions with C₆₀ clusters was found to force the C₆₀ molecules to disintegrate and the films to amorphize. p-type conduction was observed for the C₆₀ films doped with aluminum by simultaneously sputtering aluminum during deposition. C₆₀/Si structures show heterojunction characteristics that can be influenced by light illumination. The photoelectric properties of the films were found to be improved by doping with aluminum. Received: 12 January 1998/Accepted: 24 March 1998     

Junction characteristics of C60/polycarbonate blend on Si substrate

We report a study of the interface between fullerene (C₆₀) doped polycarbonate (PC) blends and n-type Si substrate. C₆₀ is usually an electron acceptor in interpenetrated networks and an electron transport in photovoltaic cells. We have studied that the guest-host approach to prepare C₆₀ doped polycarbonate blend. In this article, we report the I-V characteristics of C₆₀ doped polycarbonate/n-type Si junction and the annealing effect on these characteristics. In this junction, a nanocomposite of organic semiconductor fullerene (C₆₀), used as the active medium, with an inert polycarbonate matrix was spin coated on n-type Si substrate. We found that the C₆₀ shows the junction characteristics with n-type Si substrate. The knee voltage and dynamic resistance varies with concentration of C₆₀ as well as temperature. Ellipsometry studies showed the annealing effect on the refractive index and thickness of C₆₀ doped polycarbonate blend on n-type Si substrate. The optical micrographs show that fullerene (C₆₀) is spherical molecule and it is blend in the form of crystallites having size of micron order.     

Molecular beam deflection experiments on mixed clusters

Gas phase Ti-C₆₀ clusters are studied by molecular beam electric deflection. The permanent dipole moment of the TiC₆₀ molecule is determined. It is equal to 8.1±1.5 D. This dipole is due to a transfer of electron from the transition metal atom to the C₆₀ cage. No dipole is observed for Ti(C₆₀)₂ molecules. This is in agreement with the symmetrical dumbbell-like structure that has been previously proposed. Received 22 November 2000