Silicide formation by furnace annealing of thin Si films on large-grained Ni substrates

Si films with a thickness of approximately 250 nm have been electron-beam evaporated on thick, large-grained Ni substrates (grain size a few mm to 1 cm in diameter). An in situ sputter cleaning procedure has been used to clean the Ni surface before the Si deposition. Thermal annealings have been performed in a vacuum furnace. Ni₂Si is the first phase that grows at temperatures between 240 °C and 300 °C as a laterally uniform interfacial layer with a diffusion-controlled kinetics. The layer thicknessx follows the growth lawx ²=kt, withk=k ₀ exp(-E _a k _B T), wherek ₀=6.3 × 10^–4cm 2/s andE _a=(1-1±0.1) eV. Because of the virtually infinite supply of Ni, annealing at 800 °C for 130min yields a Ni-based solid solution as the final phase. The results are compared with those reported in the literature on suicide formation by the reaction of a thin Ni film on Si substrates, as well as with those for interfacial phase formation in Ni/Zr bilayers.     

Post deposition purification of PTCDA thin films

The decomposition of perylene-3,4,9,10-tetracarboxylic dianhydride (PTCDA) molecules during evaporation of unpurified raw material in ultra high vacuum was studied. The fragments were identified by mass spectrometry and the influence of these fragments and further contaminations of the raw material on the electronic structure of PTCDA thin films was measured by photoemission spectroscopy. Annealing of contaminated PTCDA films was tested as cheap and easy to perform method for (partial) post deposition purification of the contaminated films.     

Nanostructure of laser-deposited palladium thin films on different substrates

The morphological features of palladium thin films deposited on different substrates are described. Film deposition has been performed by means of the pulsed laser evaporation method. It is shown that the grain structure of palladium films is formed independently of the substrate roughness. Particular emphasis is placed on the correlation between gas-sensitive metal-insulator-semiconductor (MIS) sensor properties and the nanostructure of palladium films used as metal electrodes in these sensors. It is concluded that a change in the morphology of palladium films has no direct influence on the degradation of the hydrogen sulphide sensitivity of MIS sensors that arises after sensor annealing in air enriched with hydrogen.     

Multicolor photon emission from organic thin films on different substrates

Thin films of 1-pentyl-2^/,3^/-difluoro-3^///-methyl-4^////-octyl-p-quinquephenyl and 9,10-Bis (4-pentylphenylethynyl)antracene organic molecules were grown on optical glass, silicon and porous silicon substrates. First optical and luminescent properties of such hybrid composites are thoroughly studied using spectroscopic techniques. The strong decrease of aggregation in thin films of 1-pentyl-2^/,3^/-difluoro-3^///-methyl-4^////-octyl-p-quinquephenyl on porous silicon was observed. The possibility of simultaneous red, green and blue tunable photon emission from organic film/porous silicon hybrid structure is demonstrated.     

Residual stress in Ni-Mn-Ga thin films deposited on different substrates

Four series of Ni_51.4Mn_28.3Ga_20.3/substrate thin film composites, where the substrate is either Si(100), MgO(100), alumina or Mo foil, and two series of Ni_53.5Mn_23.8Ga_22.7/substrate composites where the substrate is either alumina or Mo foil, with different film thicknesses varying from 0.1 to 5 μm have been studied in the cubic phase by XRD stress measurements. The values of residual stresses are found to be dependent on both substrate and film thickness. In the submicron range, a correlation between thickness dependencies of residual stress and transformation temperatures is experimentally obtained. The temperature dependence of the d-spacing d₂₂₀ is studied for the films deposited on Si(100).     

Electronic structure and work function of potassium-doped PTCDA thin films

The electronic properties of thin films of potassium-doped 3,4:9,10-perylenetetracarboxylic dianhydride (PTCDA) have been studied using photoemission spectroscopy. Potassium addition results in a charge transfer to PTCDA molecules as signaled by the evolution of the valence band photoemission data, and the potassium ions mainly interact with the carbonyl end groups of the PTCDA molecules. None of the potassium-doped PTCDA films prepared in our studies is metallic, which is attributed to the effect of electronic correlations. PACS 71.20.Rv; 79.60.-i     

PZT铁电薄膜纳米尺度畴结构的扫描力显微术研究

利用扫描力显微术中压电响应模式原位研究了（111）择优取向的PZT60/40铁电薄膜的纳米尺度畴结构及其极化反转行为.铁电畴图像复杂的畴衬度与晶粒中的畴排列和晶粒的取向密切相关.直接观察到极化反转期间所形成的小至30nm宽的台阶结构，该台阶结构揭示了（111）取向的PZT60/40铁电薄膜在极化反转期间其畴成核与生长机理主要表现为铁电畴的纵向生长机理. 关键词： 畴结构 反转机理 PZT薄膜 扫描力显微术     

Effects of non-stoichiometric RuO x thin films on the dielectric properties of BaTiO3 thin films

The deconvolution process of X-ray photoemission spectra for O 1s and Ru 3d, X-ray diffraction and Rutherford backscattering spectrometry reveal that the RuO _x films (x = 2.0 – 2.2) deposited at a O₂ partial pressure less than 30% show (110)-oriented grains, whereas the RuO _x films (x = 2.3 – 2.4) deposited at a 40–50% O₂ partial pressure show amorphous and (101)-oriented grains due to the excess O interstitials and RuO₃ or RuO₄. These differences in the crystal phases of RuO _x influence the crystal structure of BaTiO₃ deposited on these RuO _x bottom electrodes, resulting in a higher dielectric constant and a lower dissipation factor for tetragonal BaTiO₃/RuO _x (x = 2.1) than amorphous BaTiO₃/RuO _x (x = 2.4).     

Third-order phase transition and superconductivity in thin films

We have found a new mean field solution in the BCS theory of superconductivity. This unconventional solution indicates the existence of superconducting phase transitions of third order in thin films, or in bulk matter with a layered structure. The critical temperature increases with decreasing thickness of the layer, and does not exhibit the isotope effect. The electronic specific heat is a continuous function of temperature with a discontinuity in its derivative.     

Femtosecond dynamics of Co thin films on Si support

The ultrafast electron and spin dynamics of Co films was investigated using a femto-second pump-probe technique. The samples were magnetically characterized by means of magnetooptical Kerr effect and non-optical magnetometers, i.e. superconductive quantum interference device and alternating gradient field magnetometer. Time evolution of both, Kerr rotation and ellipticity, was measured at different points of the static hysteresis cycle. This allowed separating magnetic and non-magnetic contributions to the signal. The sample magnetization was found to drop within 200 fs, following the pulse cross-correlation trace, while the magnetization recovery time was found to last few picoseconds.     

Quasi-one-dimensional K-O chain in PTCDA thin films: evidence from first-principles calculations

Using density functional theory calculations we have found that K atoms in a PTCDA (3,4:9,10-perylenetetracarboxylic dianhydride) crystal form a quasi-one-dimensional (1D) K-O chain interacting with carboxylic oxygen of the terminal anhydride groups of PTCDA. The K-K distance in the chain (3.72 Angstrom) is commensurate to the periodicity of the organic semiconductor. We obtain that the K-O structure is stabilized by charge transfer from K to PTCDA molecules, forming prevalently ionic bonds: the electronic density of the chemistry induced gap states is essentially delocalized on the perylene core of PTCDA, while potassium appears spoiled of its charge. Band dispersion along the direction of molecular stack is evaluated to be 0.2 eV in pure PTCDA crystal and 0.5 eV in the K-doped system, confirming that the interaction occurs between different molecular planes.     

Stresses and deformation processes in thin films on substrates

The stresses that develop in thin films on substrates can be detrimental to the reliability of thin film electronic devices. In order to design these devices for improved mechanical reliability, an understanding of the origin of these stresses and the controlling deformation processes in thin films is needed. This review begins with a discussion of the basic techniques used for measuring stresses in thin films and for studying the mechanical properties of thin films. The proposed models for the origin of stresses in thin films are then reviewed. Finally, the effects of microstructure and substrate constraint on thin film deformation processes are discussed.     

Cyclic voltammetry study of electrodeposition of CuGaSe2 thin films on ITO-glass substrates

The electrodeposition mechanism of CuGaSe₂ (CGS) thin films on ITO substrates has been investigated using cyclic voltammetry technique. The cyclic voltammetric study was performed in unitary Cu, Ga and Se systems, binary Cu–Se, Ga–Se systems and ternary Cu–Ga–Se system. The electrodeposition metallic Ga from Ga unitary electrolytes is impossible due to its low reduction potential. No reduction peak was found for the reduction of Ga³⁺ to Ga in the cyclic voltammogram of unitary system. However, in the cyclic voltammogram of ternary Cu–Ga–Se system, reduction peak at −0.6 V was observed with addition of GaCl₃. Also, current density of the peak was increased with increasing concentration of GaCl₃. It is corresponded to the formation of gallium selenides and/or copper–gallium–selenium compounds. The contents of Ga in the films were significantly changed from −0.4 V to −0.6 V. SEM and XRD analysis also showed that surface morphology and crystalline phase of films were significantly changed with increasing Ga content.     

Laser fluence dependence of the elastic properties of diamond-like carbon films prepared by pulsed-laser deposition

We studied the temperature dependence of internal friction of variety of amorphous diamond-like carbon films prepared by pulsed-laser deposition. Like the most of amorphous solids, the internal friction below 10 K exhibits a temperature independent plateau, which is caused by the atomic tunnelling states—a measure of structure disorder. In this work, we have varied the concentration of sp³ versus sp² carbon atoms by increasing laser fluence from 1.5 to 30 J/cm². Our results show that the internal friction has a nonmonotonic dependence on sp³/sp² ratio with the values of the internal friction plateaus varying between 6×10⁻⁵ and 1.1×10⁻⁴. We explain our findings as a result of a possible competition between the increase of atomic bonding and the increase of internal strain in the films, both of which are important in determining the tunneling states in amorphous solids. The importance of the internal strain in diamond-like carbon films is consistent with our previous study on laser fluence, doping, and annealing, which we will review as well. In contrast, no significant dependence of laser fluence is found in shear moduli of the films, which vary between 220 and 250 GPa.     

SrTiO3(110) thin films grown directly on different oriented silicon substrates

We have grown (110)-oriented SrTiO₃ (STO) thin films on silicon without any buffer layer, by means of pulsed laser deposition technique. The crystal structures of the grown films were examined by X-ray diffraction analysis including θ–2θ scan and rocking curve as well as Laue diffraction methods. STO films with single (110) out-of-plane orientation were formed on all (100), (110) and (111)-oriented Si substrates. The in-plane alignments for the epitaxial STO films grown directly on Si (100) were found as STO[001]//Si[001] and STO[11̄0]//Si[010]. The results should be of interest for better understanding of the growth of perovskite oxide thin films on silicon wafers. PACS 77.55.+f; 68.55.JK; 81.15Fg     

Mechanism of gain narrowing in conjugated polymer thin films

Received: 19 January 1998     

Stability of thin polymer films on a corrugated substrate

We study the wetting behaviour of thin polystyrene (PS) films on regularly corrugated silicon substrates. Below a critical film thickness the PS films are unstable and dewet the substrates. The dewetting process leads to the formation of nanoscopic PS channels filling the grooves of the corrugated substrates. Films thicker than the critical thickness appear stable and follow the underlying corrugation pattern. The critical thickness is found to scale with the radius of gyration of the unperturbed polymer chains. Received 6 April 2000 and Received in final form 24 August 2000     

The influence of using different substrates on the structural and optical characteristics of ZnO thin films

ZnO thin films with thikness d = 100 nm were deposited onto different substrates such as glass, kapton, and silicon by radio frequency magnetron sputtering. The structural analyses of the films indicate they are polycrystalline and have a wurtzite (hexagonal) structure.The ZnO layer deposited on kapton substrate shows a stronger orientation of the crystallites with (0 0 2) plane parallel to the substrate surface, as compared with the other two samples of ZnO deposited on glass and silicon, respectively.All three layers have nanometer-scale values for roughness, namely 1.7 nm for ZnO/glass, 2.4 nm for ZnO/silicon, and 6.8 nm for ZnO/kapton. The higher value for the ZnO layer deposited on kapton substrate makes this sample suitable for solar cells applications. Transmission spectra of these thin films are strongly influenced by deposition conditions. With our deposition conditions the transparent conducting ZnO layer has a good transmission (78-88%) in VIS and NIR domains. The values of the energy gap calculated from the absorption spectra are 3.23 eV for ZnO sample deposited onto glass substrate and 3.30 eV for the ZnO sample deposited onto kapton polymer foil substrate. The influence of deposition arrangement and oxidation conditions on the structural, morphological, and optical properties of the ZnO films is discussed in the present paper.     

XTEM,ellipsometric and ARXPS study of a-SiOx and a-Ge thin films on silicon substrates

Cross sectional transmission electron microscopy (XTEM), ellipsometry and angularresolved X-ray induced photoelectron spectroscopy (ARXPS) are used for the thin films thickness determination of a-SiO _x /a-Ge/Si (111) structures. The ARXPS data are evaluated within a flat, uniform and layered model neglecting or including the electron elastic scattering processes.Presented at the Seminar on Secondary Electrons in Electron Spectroscopy, Microscopy, and Microanalysis, Chlum (The Czech Republic), 21–24 September 1993.The authors would like to thank Mgr. Petr Jaro for his help in preparing calculation programme.     

Fabrication and optical properties of SnS thin films by SILAR method

Although the fabrication of tin disulfide thin films by SILAR method is quiet common, there is, however, no report is available on the growth of SnS thin film using above technique. In the present work, SnS films of 0.20 μm thickness were grown on glass and ITO substrates by SILAR method using SnSO₄ and Na₂S solution. The as-grown films were smooth and strongly adherent to the substrate. XRD confirmed the deposition of SnS thin films. Scanning electron micrograph revealed almost equal distribution of the particle size well covered on the surface of the substrate. EDAX showed that as-grown SnS films were slightly rich in tin component while UV-vis transmission spectra exhibited high absorption in the visible region. The intense and sharp emission peaks at 680 and 825 nm (near band edge emission) dominated the photoluminescence spectra.