Fabrication of multilayered Ge nanocrystals embedded in SiOxGeNy films

Multilayered Ge nanocrystals embedded in SiO_xGeN_y films have been fabricated on Si substrate by a (Ge + SiO₂)/SiO_xGeN_y superlattice approach, using a rf magnetron sputtering technique with a Ge + SiO₂ composite target and subsequent thermal annealing in N₂ ambient at 750 °C for 30 min. X-ray diffraction (XRD) measurement indicated the formation of Ge nanocrystals with an average size estimated to be 5.4 nm. Raman scattering spectra showed a peak of the Ge-Ge vibrational mode downward shifted to 299.4 cm⁻¹, which was caused by quantum confinement of phonons in the Ge nanocrystals. Transmission electron microscopy (TEM) revealed that Ge nanocrystals were confined in (Ge + SiO₂) layers. This superlattice approach significantly improved both the size uniformity of Ge nanocrystals and their uniformity of spacing on the ‘Z’ growth direction.     

Indium-induced superstructures formed on Si(1 1 0) surfaces

Si(1 1 0) surfaces covered with small amounts of In deposit and then annealed at high temperature were investigated by RHEED, and two kinds of superstructures with A = 3a and B = −a + 4b, and A = 3a − 2b and B = −2a + 4b as primitive translational vectors are reported to form on the surfaces.     

Effect of C and SiC additions into in situ or mechanically alloyed MgB2 deformed in Ti sheath

Effect of 3.4 wt.% C and 5 wt.% SiC doping into the standard in situ (IN) process and mechanically alloyed (MA) MgB₂ was studied. Powders of IN and MA process were carried out in air and in argon filled glove box, respectively. Wire samples were prepared by two-axial rolling deformation of IN and MA powders inside the Ti tube. Titanium as sheath material allows to use higher sintering temperatures, we used 700 °C and 800 °C for 30 min in Argon. Critical current densities (J_c) were measured at variable temperatures 4.2 K, 10 K, 15 K and 20 K in the external magnetic fields ranging to 15 T. Critical temperatures, upper critical fields and irreversibility fields of IN and MA with SiC and C additions are compared and discussed. The highest transport properties were observed for wires with MA SiC doped MgB₂ in the whole scale of temperatures 4.2–20 K. Upper critical field was rapidly enhanced in the case of carbon doped MA samples at 4.2 K. MA samples have shown decreased J_c values for higher temperatures (15 K, 20 K), in some case even worse than for the not doped reference IN sample. Carbon substitution and grain connectivity of analyzed samples are compared and discussed. Presented results show that for 20 K applications some new ways (additions) have to be found for increasing the J_c substantially.     

Magnetic structure of the La3NiGe2-type Tb3NiGe2 and Mn5Si3-type Tb5NixGe3−x (x=0 and 0.3)

We present a neutron powder diffraction investigation of the magnetic structure of La₃NiGe₂-type Tb₃NiGe₂ and Mn₅Si₃-type Tb₅Ni_xGe_3−x (x=0, 0.3) compounds. It is found that below∼135 K Tb₃NiGe₂ exhibits a commensurate b-collinear ferrimagnetic ordering with C_2h′={1, m_z, 1′×2_z, 1′×1?} magnetic point group. The Mn₅Si₃-type Tb₅Ge₃ and Tb₅Ni_0.3Ge_2.7 compounds are found to present a flat spiral type antiferromagnetic ordering at 85 and ≥89 K, respectively. The Ni for Ge substitution is found to decrease the flat spiral ordered magnetic unit cell from a×a×40c of Tb₅Ge₃ (below 40 K) down to a×a×5c for Tb₅Ni_0.3Ge_2.7 (below ∼10 K).     

A new quasi-one-dimensional molecular solid based on Ni(mnt)2 anion: Crystal structure and spin-gap transition

A new molecular solid, [1-(4′-bromo-2′-fluorobenzyl)-4-dimetylaminopyridinium]-bis(maleonitriledithiolato)nickel(III), (BrFBzPyN(CH₃)₂(Ni(mnt)₂)(1), has been prepared and characterized by elemental analyses, IR, ESI-MS spectra, single crystal X-ray diffraction and magnetic measurements. Compound 1 crystallizes in the orthorhombic space group Pnma, a=20.579(4) Å, b=7.078(1) Å, c=17.942(4) Å, α=β=γ=90°, V=2613.3(9) Å³, Z=4. The Ni(III) ions of 1 form a quasi-one-dimensional Zigzag magnetic chain within a Ni(mnt)₂⁻ column through Ni?S, S?S, Ni?Ni, or π?π interactions with an Ni?Ni distance of 4.227 Å. Magnetic susceptibility measurements in the temperature range 2-300 K show that 1 exhibits a spin-gap transition around 200 K, and antiferromagnetic interaction in the high-temperature phase (HT) and spin gap in the low-temperature phase (LT). The transition for 1 is second-order phase transition as determined by DSC analyses.     

Sonochemical syntheses of a nano-sized copper(II) supramolecule as a precursor for the synthesis of copper(II) oxide nanoparticles

Nanoparticles of a three-dimensional supramolecular, [Cu(L)₂(H₂O)₂] (1), (L⁻ = 1H-1,2,4-triazole-3-carboxylate), have been synthesized by a sonochemical process and characterized by scanning electron microscopy, X-ray powder diffraction, IR spectroscopy and elemental analyses. The thermal stability of compound 1 both its bulk and nano-size has been studied by thermal gravimetric (TG) and differential thermal analyses (DTA) and compared each other. Concentration of initial reagents effects on size and morphology of nano-structured compound 1, have been studied. Calcination of the nano-sized compound 1 at 600 °C under air atmosphere yields CuO nanoparticles.     

Prepare high efficiency Mn-doped Zn2SiO4 green phosphors in air using nano-particles

In this study, nano-scale precursors of ZnO, SiO₂, and MnO₂ powders were used to prepare mixtures with the compositions of 2ZnO+SiO₂+X mol% MnO₂ (X=MnO₂/2ZnO, abbreviated as Zn₂SiO₄-X-MnO₂), where 2≤X≤5. The mixed Zn₂SiO₄-X-MnO₂ mixtures were calcined from 900 to 1300 °C in air in order to synthesize Zn₂SiO₄:Mn²⁺ green phosphors. The X-ray diffraction patterns of Zn₂SiO₄-X-MnO₂ particles indicated that ZnO was present in the 900 °C-calcined Zn₂SiO₄-X-MnO₂ phosphors, but not in particles calcined at temperatures of 1000 °C and higher. However, the unapparent secondary phase of ZnMnO₃ was found in the 1200 and 1300 °C-calcined Zn₂SiO₄-5-MnO₂ compositions. The luminescent characteristics of Zn₂SiO₄-X-Mn²⁺ phosphors were compared with that of a commercial product (Nichia Corp., Japan). The photoluminescence (PL) intensity of 1200 °C-calcined Zn₂SiO₄-4-MnO₂ phosphors was higher and the decay times of all synthesized Zn₂SiO₄-X-MnO₂ phosphors were longer than those of the commercial product.     

Organic radical molecular solids based on [(TCNQ)n] (n=1 or 2): Syntheses, crystal structures, magnetic properties and DFT analyses

Four molecular solids consisting of the 7,7,8,8-tetracyanoquinodimethane (TCNQ) radical and benzylpyridinium or benzylquinolinium derivatives with molar ratios of 1:1 (1-3) and 2:1 (4) have been prepared and characterized. In the crystals of 1 and 3, TCNQ⁻ monoanions and the corresponding cations form segregated stacks, which are regular in 1 but irregular in 3. Instead of segregated stacks, TCNQ⁻ monoanions in 2 form isolated π-dimers. In the crystals of 4, two crystallographic independent TCNQ species possess almost equal fractional negative charge (ca. −0.5). Two types of TCNQ species form a tetrad, these tetrads make a TCNQ stack with the pattern …BAAB…BAAB… along the crystallographic a-b direction. The magnetisms for 1-4 can be simply explained by the formation of singlet spin state. A broken symmetry approach in a density functional theory framework at the ub3lyp/6-31 g level was used to calculate the magnetic exchange constants in 1-4. The results qualitatively demonstrate the observed magnetic properties.     

Sonochemical syntheses and characterization of nano-sized lead(II) coordination polymer with ligand 1H-1,2,4-triazole-3-carboxylate

Nanoparticles of a two-dimensional coordination polymer, {[Pb(L)(μ_1,1-NCS)(H₂O)]}_n (1), (L⁻ = 1H-1,2,4-triazole-3-carboxylate), have been synthesized by a sonochemical process and characterized by scanning electron microscopy, X-ray powder diffraction, IR spectroscopy and elemental analyses. The thermal stability of compound 1 both its bulk and nano-size has been studied by thermal gravimetric (TG) and differential thermal (DTA) analyses and compared each other. Concentration of initial reagents effects and the role of power ultrasound irradiation on size and morphology of nano-structured compound 1, have been studied. Calcination of the single crystals and nano-sized compound 1 at 400 °C under air atmosphere yields mixture of PbS and Pb₂(SO₄)O nanoparticles. Results show that the size and morphology of the PbS and Pb₂(SO₄)O nanoparticles are dependent upon the particles size of compound 1. A decrease in the particles size of compound 1 leads to a decrease in the particles size of the PbS and Pb₂(SO₄)O.     

Low-density dislocation arrays at heteroepitaxial Ge/GaAs-interfaces investigated by high voltage electron microscopy

High-voltage electron microscopy in combination with a large-area thinning technique has been applied to thin epitaxial Ge layers on GaAs substrates. These layers exhibit 60° misfit dislocations along the 〈110〉 directions parallel to the interface. Various dislocation reactions are evaluated from the electron micrographs, e.g. the formation of non-glissile 90° dislocations from two nearly parallel 60° dislocations and the annihilation reaction of two crossing 60° dislocations with identical Burgers vectors. The latter reaction occasionally leads to a dislocation multiplication. The misfit dislocations in very thin layers (～0.5 μm thickness and a linear dislocation density of less than 100 dislocation lines/cm) tend to be arranged in groups rather than being equidistant. Consequences for the interpretation of x-ray topograms are discussed.     

Visual investigation of the intermediate state in the region of metamagnetic phase transition in ErFeO3

We carried out the first observation of the intermediate state (IS) in the region of metamagnetic phase transition (MPT) in ErFeO₃: an external magnetic field H∥c (H=0–4 kOe), the temperature range 2.15–1.6 K. The ranges of the IS existence and the domain structure (DS) features were determined. Likely mechanisms of the IS thermodynamic stabilization and conditions for its visualization in ErFeO₃-plates with various crystallographic orientations were analyzed. The thermodynamic model of IS was offered: the intermediate state was stabilized by the mechanical stress that accompanies MPT. Excellent agreement with experiment was achieved.     

Misfit dislocations in gold/Permalloy multilayers

Several groups have reported the misfit dislocation structures in Au/Ni_0.8Fe_0.2 multilayers where the lattice parameter misfit is very large. To explore the factors controlling such structures, molecular dynamics simulations have been used to simulate the vapour-phase growth of (111)-oriented Au/Ni_0.8Fe_0.2 multilayers. The simulations revealed the formation of misfit dislocations at both the gold-on-Ni_0.8Fe_0.2 and the Ni_0.8Fe_0.2-on-gold interfaces. The dislocation configuration and density were found to be in good agreement with previously reported high-resolution transmission electron microscopy observations. Additional atomic-scale simulations of a model nickel–gold system indicated that dislocations are nucleated as the first nickel layer is deposited on gold. These dislocations have an (a/6)?112? Burgers vector, typical of a Shockley partial dislocation. Each dislocation creates an extra {220} plane in the smaller lattice parameter nickel layer. These misfit-type dislocations effectively relieve misfit strain. The results also indicated that the dislocation structure is insensitive to the energy of the depositing atoms. Manipulation of the deposition processes is therefore unlikely to reduce this component of the defect population.     

Nanoscale dislocation patterning in Bi(1 1 1)/Si(0 0 1) heteroepitaxy

Continuous, atomically flat, and epitaxial Bi(1 1 1) films could be grown on Si(0 0 1). The inherent strain of 2.3% between the Bi(1 1 1) and Si(0 0 1) lattices is relieved by the formation of a grating like one-dimensional misfit dislocation array at the heterointerface. The lattice distortions around each dislocation give rise to a pronounced height depression Δh = 0.12 nm of the surface, which results in a spot splitting in low-energy electron diffraction and a height contrast in scanning tunneling microscopy (STM). Using STM surface profiles across these depressions, the Burgers vector of the underlying isolated non-interacting dislocations is estimated to be 0.377 nm. For thicker Bi films the ordering of the dislocation network is increased. This reflects an increase of repulsive interaction between neighboring dislocations.     

High pressure X-ray diffraction study on icosahedral boron arsenide (B12As2)

The high pressure properties of icosahedral boron arsenide (B₁₂As₂) were studied by in situ X-ray diffraction measurements at pressures up to 25.5 GPa at room temperature. B₁₂As₂ retains its rhombohedral structure; no phase transition was observed in the pressure range. The bulk modulus was determined to be 216 GPa with the pressure derivative 2.2. Anisotropy was observed in the compressibility of B₁₂As₂—c-axis was 16.2% more compressible than a-axis. The boron icosahedron plays a dominant role in the compressibility of boron-rich compounds.     

Dislocation structure of intermetallic Ti3Al subjected to high-temperature deformation

Transmission electron microscopy was used to examine the dislocation structure of intermetallic Ti₃Al subjected to deformation at tempertures T = 1073–1273 K. The microstructure of samples subjected to high-temperature deformation is established to contain mobile superdislocations of a and 2c + a types, and single dislocations with Burgers vector [0001] are also observed on the prismatic planes. Possible models of destruction of barriers associated with 2c + a superdislocations on the pyramidal planes are discussed using the results of computer simulations of the structure of a superdislocation core in in Ti₃Al.     

Effect of surface preparation on the properties of Au/p-Cd1−xZnxTe

The effect of bromine methanol (BM) etching and NH₄F/H₂O₂ passivation on the Schottky barrier height between Au contact and semi-insulated (SI) p-Cd_1−xZn_xTe (x ≈ 0.09-0.18) was studied through current-voltage (I-V) and capacitance-voltage (C-V) measurements. Near-infrared (NIR) spectroscopy technique was utilized to determine the Zn concentration. X-ray photoelectron spectroscopy (XPS) for surface composition analysis showed that BM etched sample surface left a Te⁰-rich layer, however, which was oxidized to TeO₂ and the surface [Te]/([Cd] + [Zn]) ratio restored near-stoichiometry after NH₄F/H₂O₂ passivation. According to I-V measurement, barrier height was 0.80 ± 0.02-0.85 ± 0.02 eV for Au/p-Cd_1−xZn_xTe with BM etching, however, it increased to 0.89 ± 0.02-0.93 ± 0.02 eV with NH₄F/H₂O₂ passivation. Correspondingly, it was about 1.34 ± 0.02-1.43 ± 0.02 eV and 1.41 ± 0.02-1.51 ± 0.02 eV by C-V method.     

Phase coexistence between the (√3 × √3)R30° - β and (1 × 1) phases on Pb/Ge(1 1 1)

We have characterized the phase transition between the (1 × 1) and (√3 × √3)R30° - β phases on Pb/Ge(1 1 1) using low energy electron microscopy (LEEM). We show that the transition is first-order and that, in the coexistence region of the two phases, the dominant mechanism for phase separation changes critically with Pb coverage, from nucleation and growth at 1.33 ML (saturation coverage of the β phase) to spontaneous domain switching due to thermal fluctuations of the local Pb density for slightly smaller coverage. As the Pb coverage decreases, the concentration of vacancies in the β phase increases, making additional possible Pb adsorption sites available. The larger resulting local density fluctuation of Pb becomes comparable to the density difference of the two phases, manifesting itself in the observed domain switching.     

Syntheses of optically efficient (La1−x−yCexTby)F3 nanocrystals via a hydrothermal method

Optically efficient cerium and terbium doped lanthanide fluoride (La_1−x−yCe_xTb_y)F₃ nanocrystals with different doping concentrations have been synthesized by a hydrothermal route in the presence of ethylenediamine tetraacetic acid disodium salt (EDTA). The results showed that the formation of nanocrystals with different morphologies depends on terbium ion Tb³⁺ doping concentration, but independent of cerium ion Ce³⁺ doping concentration. With increase in Tb³⁺ doping concentration, the morphologies of nanocrystals evolved from a spherical shape to a plated-like one. In addition, both the photoluminescence quantum yield (PL QY) and the fluorescence lifetime of nanocrystals increased with the increase in Ce³⁺ doping concentration in cerium and terbium co-doped system. The PL QY reached up to 55%, and the lifetime up to 7.3 ms. Transmission electron microscopy (TEM), X-ray diffraction (XRD), selected area electron diffraction (SAED), X-ray fluorescence (XRF), energy dispersive spectroscopy (EDS), ultraviolet-visible (UV-vis) absorption, photoluminescence (PL) and infrared (IR) spectroscopies were employed to characterize the properties of nanocrystals. The growth mechanism of nanocrystals with different morphologies and optical properties of nanocrystals with different doping concentrations were investigated.     

Nonlinear optical absorption and fluorescence of phosphine-substituted bithiophenes in the violet-blue spectral region

The nonlinear optical absorptions of two 5,5′-bis(diphenylphosphino)-2,2′-bithiophene derivatives, Ph₂(X)P(C₄H₂S)₂P(X)Ph₂ (X = O, 1; S, 2), have been investigated by direct transmission measurement with both picosecond and nanosecond laser pulses from 420 nm to 480 nm. Saturated dichloromethane solutions of 1 and 2 exhibit strong nonlinear optical absorptions in this violet-blue spectral region with that of 2 being stronger at all wavelengths. In the picosecond regime, at 420 nm, the transmittance rapidly falls to 50% when the incident fluence is 0.22 J/cm² for 1 and 0.11 J/cm² for 2. Two-photon absorption appears to be the primary mechanism for this nonlinear absorption. The two-photon absorption coefficients β for 1 (2.1 cm/GW) and 2 (4.4 cm/GM) were obtained by fitting the measurement of transmittance as the function of incident beam intensity at 420 nm. These β values are comparable with some of the best results obtained for organic materials in the green, red and infrared spectral region. Both compounds also show fluorescence with an emission peak at 390 nm for 1 and 400 nm for 2. The fluorescence of 1 is considerably stronger than is that of 2. The combination of the wide band gap and strong fluorescence emission of 1 makes it a promising candidate as a host material for blue organic light emitting diodes.     

Thermal stability of SiGe films on an ultra thin Ge buffer layer on Si grown at low temperature

The thermal stability of SiGe films on an ultra thin Ge buffer layer on Si fabricated at low temperature has been studied. The microstructure and morphology of the samples were investigated by high-resolution X-ray diffraction, Raman spectra and atomic force microscopy, and using a diluted Secco etchant to reveal dislocation content. After thermal annealing processing, it is observed that undulated surface, threading dislocations (TDs) and stacking faults (SFs) appeared at the strained SiGe layer, which developed from the propagation of a misfit dislocation (MD) during thermal annealing, and no SFs but only TDs formed in strain-relaxed sample. And it is found that the SiGe films on the Ge layer grown at 300 °C has crosshatch-free surface and is more stable than others, with a root mean square surface roughness of less than 2 nm and the threading dislocation densities as low as ∼10⁵ cm⁻². The results show that the thermal stability of the SiGe films is associated with the Ge buffer layer, the relaxation extent and morphology of the SiGe layer.