Negative excess noise in quantum conductors

We predict that in quantum conductors the excess noise can be absent or even negative provided the energy dependence of the electron transmission probability at the Fermi energy is sufficiently sharp. In other words the current (or voltage) fluctuations under transport conditions can be less than in equilibrium. As examples for this surprising behavior we consider resonant tunneling, ballistic point contacts and the integer quantum Hall effect.Work performed within the research program of the Sonderforschungsbereich 341, Köln-Aachen-Jülich     

Current partition in multiprobe conductors in the presence of slowly oscillating external potentials

In the presence of a static potential drop a carrier stream incident at a contact of the sample is partitioned into the other contacts according to the transmission probabilities of the sample. The bare response to oscillating potentials, on the other hand, violates current conservation due to the piling up of unscreened charges in the sample, and has to be modified by taking the induced screening potential into account. We present a novel derivation of the conductance response to oscillating external chemical potentials, find the response to an arbitrary internal potential in terms of functional derivatives with respect to the local potential of the scattering matrix of the conductor, and determine the screening potential for slowly oscillating potentials from the condition of local charge neutrality. We find that the current partitioning depends on ratios of local densities of states which reflect the injection and emission properties of the contacts of the sample.     

Effect of interface traps on Debye thickness semiconductor films

The presence of the boundary interface trapping states and their role in determining the properties of Debye thickness thin semiconductor films, are demonstrated experimentally, using PbTe films deposited on mica. These charged states could not be observed earlier and be studied directly, because of the screening by the relatively high carrier density of the ordinary PbTe. Thin, Debye length thickness, PbTe films with a high concentration of interface trapping centers, possess an extraordinary high resistance. In this case the thermostimulated capacitor discharge method can be successfully applied to determine the energy of these levels, their carrier capture cross-sections and their donor- or acceptor-like character. The experimental results and theoretical calculations are discussed.     

Low-frequency noise and inelastic tunneling spectroscopy in Fe(1 1 0)/MgO(1 1 1)/Fe(1 1 0) epitaxial magnetic tunnel junctions

We report on tunnelling magnetoresistance (TMR), current–voltage (IV) characteristics and low-frequency noise in epitaxially grown Fe(1 1 0)/MgO(1 1 1)/Fe(1 1 0) magnetic tunnel junctions (MTJs) with dimensions from 2×2 to 20×20 μm². The evaluated MgO energy barrier (0.50±0.08 eV), the barrier width (13.1±0.5 Å) as well as the resistance times area product (7±1 MΩ μm²) show relatively small variation, confirming a high quality epitaxy and uniformity of all MTJs studied. At low temperatures (T<10 K) inelastic electron tunneling spectroscopy (IETS) shows anomalies related to phonons (symmetric structures below 100 meV) and asymmetric features above 200 meV. We explain the asymmetric features in IETS as due to generation of electron standing waves in one of the Fe electrodes. The noise power, though exhibiting a large variation, was observed to be roughly anti-correlated with the TMR. Surprisingly, for the largest junctions we observed a strong enhancement of the normalized low-frequency noise in the antiparallel magnetic configuration. This behavior could be related to the influence of magnetostriction on the characteristics of the insulating barrier through changes in local barrier defects structure.     

On the additivity of Flicker contributions to the excess noise in quantum conductors

We investigate the quantum interference induced non-additive contribution to the excess noise due to several mobile scatters in the diffusion/cooperon approximation. For weak impurity coupling and standard assumption on impurity hopping the relative correction to the noise spectrum is proportional to logf. Although the constant of proportionality is small the logarithmic deviation from the main additive part showing 1/f behavior seems rather remarkable.Work performed within the research program of the Sonderforschungsbereich 341, Köln-Aachen-Jülich     

Anatomy of field effects on magnetization dynamics and spin transfer noise

Spin transfer-related phenomena in nanomagnets have attracted extensive studies. In this paper we shall focus on analysis of individual and combined effects of the external, anisotropy, and demagnetization fields on magnetization dynamics and spin transfer noise. It is found that individual roles of the external, anisotropy, and demagnetization fields, as well as the combined roles of external plus anisotropy fields and anisotropy plus demagnetization fields, do not change the behavior of current induced magnetization switching. Such magnetization reversal procedures are of low noise. Our dynamics and power spectral density calculations show that it is the demagnetization field that plays a major role in inducing spin transfer noise: the demagnetization field itself or in combination with the anisotropy field will result in wave-like switching; moreover, the demagnetization field, together with the external field (not too small), will lead to precession and hence the system would be in noisy states. Our modeling work for an elliptical Py alloy is qualitatively consistent with Cornell's experiment and simulation [Science 307 (2005) 228].     

Post deposition purification of PTCDA thin films

The decomposition of perylene-3,4,9,10-tetracarboxylic dianhydride (PTCDA) molecules during evaporation of unpurified raw material in ultra high vacuum was studied. The fragments were identified by mass spectrometry and the influence of these fragments and further contaminations of the raw material on the electronic structure of PTCDA thin films was measured by photoemission spectroscopy. Annealing of contaminated PTCDA films was tested as cheap and easy to perform method for (partial) post deposition purification of the contaminated films.     

Comparative photoemission study of the electronic properties of L-CVD SnO2 thin films

In this work we present the results of comparative XPS and PYS studies of electronic properties of the space charge layer of the L-CVD SnO₂ thin films after air exposure and subsequent UHV annealing at 400 °C, with a special emphasis on the interface Fermi level position.From the centre of gravity of binding energy of the main XPS Sn 3d_5/2 line the interface Fermi level position E_F − E_v in the band gap has been determined. It was in a good correlation with the value estimated from the offset of valence band region of the XPS spectrum, as well as from the photoemission yield spectroscopy (PYS) measurements. Moreover, from the valence band region of the XPS spectrum and PYS spectrum two different types of filled electronic band gap states of the L-CVD SnO₂ thin films have been derived, located at 6 and 3 eV with respect to the Fermi level.     

Nonideality of Au/Si and Au/GaAs Schottky barriers due to process-induced defects

A mechanism of local lowering of the Schottky barrier height (SBH) is proposed, which causes nonideality in nearly ideal Au/n-Si and Au/n-GaAs Schottky barriers. Positively ionized defects generated by the process very close to the interface induce electrons in the metal-induced gap states (MIGS) and lower the SBH locally. The spatial density distribution of the ionized defects obtained from the SBH distribution is determined by the unique interaction with the MIGS. The defects are considered to have the negative-U property and are neutralized at very close positions to the MIGS. The potential distributions close to the interface have a considerable potential drop due to the large defect density. These inhomogeneous potentials are coincident with the energy level scheme of the defect identified as the defect causing the nonideality. This defect is Si self-interstitial in Au/Si SB, and As antisite in Au/n-GaAs SB. This MIGS with process-induced defect model supersedes the previously proposed two major Fermi level pinning models. The mystery of the T₀ effect is solved. The thermionic-field emission current taking place in the strong electric field has influence on the I-V characteristics at low temperatures. Regarding the C-V characteristics of Au/Si SB, the observed extra capacitance under the forward bias is an experimental evidence in accordance with the proposed model.     

Study of electronic states for V thin films deposited on 6H-SiC substrates by soft X-ray emission spectroscopy

Silicon carbide (SiC) is a candidate material for electronic devices to operate upon crucial environment. Electronic states of silicides and/or carbide/graphite formed in metal/SiC contact system is fundamentally important from the view point of device performance.We study interface electronic structure of vanadium (V) thin-film deposited on 6H-SiC(0 0 0 1) Si-face by using a soft X-ray emission spectroscopy (SXES). For specimens of V(38 nm)/6H-SiC (substrate) contact systems annealed at 850 °C, the Si L_2,3 emission spectra indicate different shapes and peak energies from the substrate. The product of materials such as silicides and/or ternary materials is suggested. Similarly, the C Kα emission spectra show the shape and peak energy characteristic of vanadium carbide including substrate 6H-SiC signal.     

Quantum size effect of electron density in ultra-thin metal films and its influence on the interlayer relaxation

Further minimization of electronic devices and microelectromechanical systems (MEMS) requires the feature sizes of relevant materials to be shrunk significantly. In such a case, boundary effects, such as interfaces and surfaces, become remarkable, especially in nanometer scale, which must affect their microstructures and properties. In this work, we have analyzed the distribution of electron charge density in Cu and Al ultra-thin films using free electron model. The results show that an electrostatic field may come into being due to quantum size effect, and the interlayer separations must relax to decrease the Coulomb energy, the thinner the films, the larger the relaxation. More interestingly, two opposite deviating directions of the center of negative charges result in two absolutely distinct interlayer relaxations: inwards for Cu and outwards for Al.     

Novel preparation methods of electrical contacts in Ge-Sb-Te thin films

New preparation methods of electrical contacts have been developed to minimize their effect on Ge-Sb-Te thin films. Impedance spectroscopy technique has been used to extract the contributions of both electrical contacts and the material under investigation. Three different configurations of electrical contacts were investigated. The results show that the effect of the contacts disappears when silver paste is placed on the gold electrode only without touching and interacting with the Ge-Sb-Te film.     

Study of electronic structures for Fe thin films deposited on Si- and C-faces of 4H-SiC substrates by soft X-ray emission spectroscopy

Silicon carbide (SiC) is a candidate material for electronic devices to operate upon crucial environment. Electronic states of silicides and/or carbide/graphite formed in metal/SiC contact system are fundamentally important from the viewpoint of device performance.We study interface electronic structure of iron thin film deposited on silicon (Si)- and carbon (C)-face of 4H-SiC(0 0 0 1) by using a soft X-ray emission spectroscopy (SXES). For specimens of Fe (50 nm)/4H-SiC (substrate) contact systems annealed at 700 and 900 °C, the Si L_2,3 emission spectra indicate different shapes and peak energies from the substrate depending on thermal-treated temperature. The product of materials such as silicides is suggested. Further, from comparison of Si L_2,3 emission spectra between Si- and C-face for the same annealing temperature at 700 °C, it is concluded that the similar silicides and/or ternary materials are formed on the two surfaces. However for those of 900 °C, the film on substrate is composed of the different silicide and/or ternary materials.     

Magnetic field dependence of conductance and conduction noise of an artificial grain boundary junction in a La0.67Ba0.33MnO3 epitaxial thin film

A single artificial grain boundary in La_0.67Ba_0.33MnO₃ (LBMO) thin film has been prepared by depositing the film on a bicrystal substrate using laser ablation technique. We investigated the magnetic field dependence of magnetoresistance and conductance-voltage characteristics of the grain boundary at 77 K. A decrease of nonlinearity of current-voltage characteristics was observed upon application of magnetic field. The results are explained by assuming the presence of two different types of parallel conducting channels (metallic and highly resistive) across the grain boundary. The analysis of the results reveals that the application of magnetic field suppresses magnetic disorders at the grain boundary region and increases metallic conduction channels across the grain boundary. The temperature dependence of the conduction noise of the bicrystal grain boundary was measured at 0 and 1.5 kG magnetic field and compared with a microbridge on the LBMO film having no grain boundary. The presence of the grain boundary was found to enhance noise by one order of magnitude. The noise of a bicrystal grain boundary showed a decrease in the presence of 1.5 kG magnetic field for T<210 K. This decrease of noise confirms that the application of a magnetic field induces more metallic channels across the grain boundary.     

Substrate influence in electron-phonon coupling measurements in thin Au films

Accurate understanding and measurement of the energy transfer mechanisms during thermal nonequilibrium between electrons and the surrounding material systems is critical for a wide array of applications. With device dimensions decreasing to sizes on the order of the thermal penetration depth, the equilibration of the electrons could be effected by boundary effects in addition to electron-phonon coupling. In this study, the rate of electron equilibration in 20 nm thick Au films is measured with the Transient ThermoReflectance (TTR) technique. At very large incident laser fluences which result in very high electron temperatures, the electron-phonon coupling factors determined from TTR measurements deduced using traditional models are almost an order of magnitude greater than predicted from theory. By taking excess electron energy loss via electron-substrate transport into account with a proposed three temperature model, TTR electron-phonon coupling factor measurements are more in line with theory, indicating that in highly nonequilibrium situations, the high temperature electron system looses substantial energy to the substrate in addition to that transferred to the film lattice through coupling.     

Low energy Ar-ion bombardment effects on the CeO2 surface

The structure and electronic properties of epitaxial grown CeO₂(1 1 1) thin films before and after Ar⁺ bombardment have been comprehensively studied with synchrotron radiation photoemission spectroscopy (SRPES). Ar⁺ bombardment of the surface causes a new emission appearing at 1.6 eV above the Fermi edge which is related to the localized Ce 4f¹ orbital in the reduced oxidation state Ce³⁺. Under the condition of the energy of Ar ions being 1 keV and a constant current density of 0.5 μA/cm², the intensity of the reduced state Ce³⁺ increases with increasing time of sputtering and reaches a constant value after 15 min sputtering, which corresponds to the surface being exposed to 2.8 × 10¹⁵ ions/cm². The reduction of CeO₂ is attributed to a preferential sputtering of oxygen from the surface. As a result, Ar⁺ bombardment leads to a gradual buildup of an, approximately 0.69 nm thick, sputtering altered layer. Our studies have demonstrated that Ar⁺ bombardment is an effective method for reducing CeO₂ to CeO_2−x and the degree of the reduction is related to the energy and amount of Ar ions been exposed to the CeO₂ surface.     

Conductance and shot noise of inelastic tunneling through a quantum dot in the Kondo regime

We investigate the inelastic transport properties of a quantum dot connected to two leads, based on the combination of a recently developed nonperturbative technique and slave-boson methods involving the approximate mapping of the many-body electron–phonon coupling problem onto a multichannel scattering problem in the Kondo regime. The nonequilibrium Green's function method is adopted in calculations for the inelastic transport processes of electrons in the limit of large Coulomb interaction U→∞$U\to \infty$ under nonequilibrium conditions. The electron–phonon interactions, which are the main source of the inelasticity, are taken into account. For a single quantum dot, we find that the differential conductance and the shot noise exhibit new structures of peaks and dips which are absent in the case without electron–phonon interactions.     

Onset of ferromagnetism in ultrathin Fe films on semiconductors

Very thin Fe films have been grown by molecular beam epitaxy on Ge(001), GaAs(001) and ZnSe(001) substrates, under identical preparation conditions. The electronic and magnetic properties of such interfaces have been studied, as a function of the Fe thickness, by means of spin resolved inverse photoemission. From the spin dependence of Fe empty states, we observe the onset of room temperature ferromagnetism to occur at a Fe thickness as low as three monolayers (ML) for Fe/Ge, while 5 and 8 ML have been found for Fe/GaAs and Fe/ZnSe, respectively.     

Interactions at tetraphenyl-porphyrin/InP interfaces observed by surface photovoltage spectroscopy

Illumination induced charge separation processes at tetraphenyl-porphyrin (H₂TPP)/InP interfaces are characterized. The results indicate that upon illumination an electronic transition takes place between the organic highest occupied molecular orbital (HOMO) and the InP conduction band. A 70 meV blue shift in the characteristic modulated surface photovoltage spectrum of a 50 nm H₂TPP film was observed when n-InP substrate was used. Such blue shift was not observed when Au, SnO₂:F or p-InP substrates were used. The shift may suggest a presence of an ordered interfacial sub-layer in an almost lying orientation, due to chemical or physical interactions at the interface. The results indicate that the Fermi level is unpinned at the interface. An exciton diffusion barrier in close proximity to the H₂TPP/n-InP interface has been demonstrated.     

Korringa relaxation time of magnetic ion system near a two-dimensional electron gas

Spin relaxation of Mn ions in a (Cd,Mn)Te quantum well with quasi-two-dimensional carriers (Q2DEG) is investigated. The mechanism of energy transfer is spin-flip scattering of Mn spin with electrons making transitions between spin subbands accompanied by a change in the Mn spin. A calculation of the spin-flip scattering rate shows that the Mn spin relaxation rate is proportional to the coupling constant squared, the density of states squared, and the electron temperature, the so called Korringa relaxation rate. It was found that for small Mn ion concentration, the relaxation time ≈10−7-10−6s is in a good agreement with experimental results. Moreover, the relaxation rate scales with L⁻², L being the well width, and it can be enhanced over its value in bulk.