On the superconductivity in in situ synthesized MgB2 tapes

Single core stainless steel (SS) sheathed MgB₂ tapes have been made by the powder-in-tube (PIT) method using commercial Mg and B powders in two series, one with nominal composition and the other with excess Mg. The electrical resistivity and susceptibility measurements have been carried out to evaluate residual resistivity ratio (RRR), the coherence length ξ(0) and critical current density J_C(T) in these tapes. Detailed structural analysis of the core material has been carried out to correlate the superconducting properties with the crystallinity. In the optimized growth condition the MgB₂ tapes exhibited an estimated J_C of ∼1.4×10⁷ A/m² at 39.45 K in zero field and the zero temperature coherence length is found to be ∼68 Å. MgB₂ tapes fabricated from starting powders having nominal Mg-composition have been shown to exhibit higher J_C than those fabricated from excess magnesium composition of the starting powders. The strained lattice together with the presence of nanosized MgO inclusion having size smaller than the coherence length, are shown to be responsible for the observed higher J_C.     

纳米C和SiC掺杂对MgB2带材超导性能的影响

采用X射线衍射仪，扫描电镜，超导量子干涉仪等仪器对纳米C和SiC掺杂的MgB₂带材进行了表征，并采用标准四引线法对样品的临界电流进行了测试. 实验表明，C和SiC掺杂在提高MgB₂带材高场下的临界电流密度方面具有显著效果. 在温度为4.2 K、磁场大于9 T条件下，C和SiC掺杂样品的临界电流密度与未掺杂样品相比均提高一个数量级以上. 掺杂样品高磁场下良好的临界电流性能主要归因于C对B的替代所产生的晶格畸变、位错等缺陷和局部成分变化而导致的有效晶内钉扎作用. 实验结果表明，SiC掺杂的MgB2带材之所以具有非常好的高场电流特性，和C掺杂的样品一样， C对B的替代起到十分关键的作用. 关键词： 2带材')" href="#">MgB₂带材 C掺杂 SiC掺杂 临界电流性能     

Correlated vortex pinning in Si-nanoparticle doped MgB2

The magnetoresistivity and critical current density of well characterized Si-nanoparticle doped and undoped Cu-sheathed MgB₂ tapes have been measured at temperatures T≥28 K in magnetic fields B≤0.9 T. The irreversibility line B_irr(T) for doped tape shows a stepwise variation with a kink around 0.3 T. Such B_irr(T) variation is typical for high-temperature superconductors with columnar defects (a kink occurs near the matching field B_?) and is very different from a smooth B_irr(T) variation in undoped MgB₂ samples. The microstructure studies of nanoparticle doped MgB₂ samples show uniformly dispersed nanoprecipitates, which probably act as a correlated disorder. The observed difference between the field variations of the critical current density and pinning force density of the doped and undoped tape supports the above findings.     

MgB2 coated superconducting tapes with high critical current densities fabricated by hybrid physical-chemical vapor deposition

The MgB₂ coated superconducting tapes have been fabricated on textured Cu (0 0 1) and polycrystalline Hastelloy tapes using coated conductor technique, which has been developed for the second generation high temperature superconducting wires. The MgB₂/Cu tapes were fabricated over a wide temperature range of 460-520 °C by using hybrid physical-chemical vapor deposition (HPCVD) technique. The tapes exhibited the critical temperatures (T_c) ranging between 36 and 38 K with superconducting transition width (ΔT_c) of about 0.3-0.6 K. The highest critical current density (J_c) of 1.34 × 10⁵ A/cm² at 5 K under 3 T is obtained for the MgB₂/Cu tape grown at 460 °C. To further improve the flux pinning property of MgB₂ tapes, SiC is coated as an impurity layer on the Cu tape. In contrast to pure MgB₂/Cu tapes, the MgB₂ on SiC-coated Cu tapes exhibited opposite trend in the dependence of J_c with growth temperature. The improved flux pinning by the additional defects created by SiC-impurity layer along with the MgB₂ grain boundaries lead to strong improvement in J_c for the MgB₂/SiC/Cu tapes. The MgB₂/Hastelloy superconducting tapes fabricated at a temperature of 520 °C showed the critical temperatures ranging between 38.5 and 39.6 K. We obtained much higher J_c values over the wide field range for MgB₂/Hastelloy tapes than the previously reported data on other metallic substrates, such as Cu, SS, and Nb. The J_c values of J_c(20 K, 0 T) ∼5.8 × 10⁶ A/cm² and J_c(20 K, 1.5 T) ∼2.4 × 10⁵ A/cm² is obtained for the 2-μm-thick MgB₂/Hastelloy tape. This paper will review the merits of coated conductor approach along with the HPCVD technique to fabricate MgB₂ conductors with high T_c and J_c values which are useful for large scale applications.     

Effect of SiC buffer layer on flux pinning property of MgB2 tapes

In this paper we aimed at investigating the flux pinning property of MgB₂ films on hastelloy tapes which are buffered on various thicknesses of SiC layers. We have observed that the increase in thickness of the SiC buffer layer is very closely related with the systematic improvement of the field dependence of the critical current densities (J_c) of MgB₂ tapes while the values of J_c decreased. According to the analysis of the pinning force density (F_p), there exist two pinning sources both in the pure MgB₂ and in the MgB₂ film with the thinnest SiC buffer layer. On the while, the pinning source observed in the MgB₂ films with thicker SiC buffer layers appears to be different from those previously mentioned. The different pinning behaviors of MgB₂ films may suggest that there be an additional pinning center working on the MgB₂ films with thick SiC buffer layers. The microstructural analyses of MgB₂ films confirmed that intra-granular defects and columnar grain boundaries may be a dominant pinning mechanism in the pure MgB₂ and the MgB₂ film with 170 nm-thick SiC buffer layer. For the MgB₂ films with thicker SiC buffer layers, carbon diffusion into the MgB₂ film, which is defined by the Auger electron spectroscopy, may be the origin of the additional pinning mechanism.     

Stoichiometry dependence of the critical current density in pure and nano-SiC doped MgB2/Fe tapes

The stoichiometry dependence of the microstructure and superconducting properties of pure and nano-SiC doped MgB₂/Fe tapes was systematically investigated. The tapes prepared with the composition of a slight deficiency of Mg (Mg_0.9B₂ and Mg_xB₂(SiC)_0.1 (x = 0.9 and 1.0)) showed the best transport J_c. Adding a slight excess of Mg like 5%, as being done by many researchers, was not beneficial for the J_c improvement as expected. The onset T_c was not significantly changed in both doped and undoped tapes by adding excess of boron or magnesium, but the transition widths were broadened due to the induced impurities. The slightly-Mg-deficient pure samples show smaller grain sizes, which corresponds to a better J_c–B performance at high magnetic field due to the enhanced grain boundary pinning. The field dependence of J_c in nano-SiC doped tapes was almost not influenced by varying the starting Mg content although microstructural difference can still be seen, suggesting that the flux pinning ability was mainly controlled by the carbon substitution effect for boron.     

MgB2 coated conductors directly grown on flexible metallic Hastelloy tapes by hybrid physical–chemical vapor deposition

MgB₂ coated conductors (CCs), which can avoid the low packing density problem of powder-in-tube (PIT) processed wires, can be a realistic solution for practical engineering applications. Here we report on the superior superconducting properties of MgB₂ CCs grown directly on the flexible metallic Hastelloy tapes without any buffer layer at various deposition temperatures from 520 to 600 °C by using hybrid physical–chemical vapor deposition (HPCVD) technique. The superconducting transition temperatures (T_c) are in the range of 38.5–39.4 K, comparable to bulk samples and high quality thin films. Clear (101) and (002) reflection peaks of MgB₂ are observed in the X-ray diffraction patterns without any indication of chemical reaction between MgB₂ and Hastelloy tapes. From scanning electron microscopy, it was found that connection between MgB₂ grains and voids strongly depend on the growth temperature. A systematic increase in the flux pinning force density and thereby the critical current density with decreasing growth temperature was observed for the MgB₂ CCs. The critical current density (J_c) of J_c(5 K, 0 T) ～10⁷ A/cm² and J_c(5 K, 2.5 T) ～10⁵ A/cm² has been obtained for the sample fabricated at a low growth temperature of 520 °C. The enhanced J_c (H) behavior can be understood on the basis of the variation in the microstructure of MgB₂ CCs with growth temperature.     

Mechanism of the formation of structure during high-temperature annealing of MgB<Subscript>2</Subscript> bulk samples deformed under pressure

MgB₂ superconductors subjected to deformation under pressure on Bridgeman anvils and subsequent annealings at 800 and 950°C were investigated by X-ray diffraction, scanning electron microscopy, and microanalysis. It was shown that at these temperatures crystals of MgB₂ phase along the residual boron dissolute in the residual liquid magnesium with the formation of both dense and loose areas of MgB₂ phase. The latter has a negative influence on critical current. At the same time, after these treatments, the samples become more uniform by the phase and chemical composition.     

Effect of temperature and concentration of solution in chemical treatment for MgB2 powder on the Jc–B property of ex situ processed MgB2 superconducting tapes

MgB₂ tapes were fabricated through an ex situ process in a powder-in-tube (PIT) technique using powders treated at elevated temperatures in benzene solutions of benzoic acid with various concentrations. The amount of carbon substitution in MgB₂ in heat-treated tapes with treatment at the boiling points (BPs) of the solutions is smaller than that at room temperature (RT). This carbon substitution improves the J_c property in the high-field region. For RT treatment, the J_c property is improved with increasing the solution concentration. In contrast, the J_c property is deteriorated with increasing the concentration for BP treatment. On the other hand, treatment with pure solvent does not bring about the J_c enhancement and carbon substitution at all at both RT and the BPs. This suggests that acidity essential for the dissolution of MgO layers attached to the surface of MgB₂ is required for carbon substitution. The BP treatment enhances the acting of the acidity and possibly inflicts damage on MgB₂ itself.     

Properties of hot pressed MgB2/Ti tapes

Hot axial and hot isostatic pressing was applied for single-core MgB₂/Ti tapes. Differences in transport current density, n-exponents and critical current anisotropy are discussed and related to the grain connectivity influenced by pressing. The magnetic Hall probe scanning measurements allowed observing the isolated regions for axially hot pressed sample attributed to the longitudinally oriented cracks introduced by pressing. The highest current densities were measured for the tape subjected to hot isostatic pressing due to improved connectivity.     

Enhanced superconducting properties of Eu2O3-doped MgB2

Bulk polycrystalline samples of Eu₂O₃-doped MgB₂ have been synthesized by a standard solid state reaction route and their structural and superconducting properties have been investigated. As a function of Eu₂O₃ content we have found a significant increase in the critical current density (J_c) and the irreversibility field (H_irr) in the magnetic field range 0–6 T. The XRD results reveal the presence of MgO and EuB₆ secondary phases along with the main hexagonal phase of MgB₂. The strain values and the lattice distortions have been found to increase almost linearly with the nominal Eu₂O₃ content. The observed significant improvement in J_c(H) and H_irr in the Eu₂O₃-doped MgB₂ samples, thus is mainly attributed to the lattice distortions introduced by Eu₂O₃ doping.     

Concurrent doping effect of Ti and nano-diamond on flux pinning of MgB2

Nano-diamond and titanium concurrently doped MgB₂ nanocomposites have been prepared by solid state reaction method. The effects of carbon and Ti concurrent doping on J_c–H behavior and pinning force scaling features of MgB₂ have been investigated. Although T_c was slightly depressed, J_c of MgB₂ have been significantly improved by the nano-diamond doping, especially in the high field region. In the mean time, the J_c value in low field region is sustained though concurrent Ti doping. Microstructure analysis reveals that when nano-diamond was concurrently doped with titanium in MgB₂, a unique nanocomposite in which TiB₂ forms a thin layer surrounding MgB₂ grains whereas nano-diamond particles were wrapped inside the MgB₂ grains. Besides, nano-diamond doping results in a high density stress field in the MgB₂ samples, which may take responsibility for the Δκ pinning behavior in the carbon-doped MgB₂ system.     

The upper critical field in two-band layered superconductors

The upper critical field of clean MgB₂ is investigated using the two-band layered Ginzburg--Landau (GL) theory. The calculated results are fitted to the experimental data of clean MgB₂ crystal very well in a broad temperature range. Based on the GL theory for clean superconductors, a phenomenological theory for dirty superconductor is proposed. Selecting appropriate parameters, two-band layered GL theory is successfully applied to the crystal of Mg(B_1-xC_x)₂ and the neutron irradiation samples of MgB₂.     

Effect of heating rates on microstructure and superconducting properties of pure MgB2

The influence of different heating rates, ranging from 5 to 30 K min⁻¹, on the microstructure and superconducting of the MgB₂ bulk was investigated. No obvious variation in the grain size was found for the samples heated from 5 K min⁻¹ to 20 K min⁻¹ except for the changes in morphologies. Moreover, the grain refinement was obtained under the heating rate of 30 K min⁻¹. The critical current density (J_c) suggested that the 5 K min⁻¹ sample had the best performance in high field. Here, the differential thermal analysis (DTA) was employed to analyze the kinetics of MgB₂ phase formation with the different heating rates. The results showed that the large amount of MgB₂ formed at low temperature, which lead to compact structures under the slow heating rate. The fast heating rate would promote the evaporation of Mg at high temperature, which was considered to generate the vacancy and impurities in the sample.     

Effect of polymers doping on flux pinning behavior of MgB2

The effects of polymers doping on irreversibility field (H_irr) and critical current density (J_c) of MgB₂ have been investigated in this work. It is found that both J_c, and H_irr, are improved by doping at relative lower temperature region. The J_c−B curves of all samples studied in this work are well fitted using J_c(B) formula in percolation model. The values of upper critical field anisotropy (γ) are obtained from the fitting result at various temperatures. It is observed that values of γ for polymers doping samples are reduced at these temperatures. This is considered to be responsible for the enhancement of values of J_c for doped samples. Moreover, the percolation threshold, p_c, is found to be enhanced with increasing temperature. It is believed that the grain boundary pinning is still dominating in MgB₂, while the deviation of experimental data from the theoretical values is due to the percolation of suppercurrent in polycrystalline MgB₂.     

Positron annihilation spectroscopy and specific heat study of Neon ion irradiated MgB2

Specific heat studies under magnetic field and positron annihilation spectroscopy were carried out on 160 MeV Ne ion irradiated polycrystalline MgB₂ samples. There is an unusual decrease in positron lifetime in the irradiated sample which may be due to neon ion implantation. This was also indicated by change in cell volume. Coincidence Doppler Broadening Spectra of Mg, B, irradiated and unirradiated MgB₂ show that positrons primarily annihilate in boron sublattice in the unirradiated sample whereas there is some similarity of the spectrum of the irradiated sample with that of Mg. There is Mg deficiency in the unirradiated sample whereas predominantly boron vacancies exist in Ne ion irradiated MgB₂ sample. Specific heat measurements show that there is a small increase in electronic part of the specific heat and electron-phonon coupling constant.     

Effects of ambient and humidity exposure on the MgB2 superconductor

Exposure effect of ambient (up to a period of 465 days) and humid atmosphere on stability and the physical properties of bulk samples of MgB₂ has been carried out based on ac-susceptibility and X-ray diffraction measurements performed at different times during the aging. The motivation of this study came from the device application potential of MgB₂ superconductor. It has been observed that on initial exposure to ambient for a period of about 2 months, the MgB₂ samples neither show any sign of phase decomposition nor any significant degradation of superconducting parameters. However, on further exposure to ambient for a period greater than 4 months duration, the samples progressively exhibited the partial conversion of MgB₂ phase into Mg-deficient phases, viz., MgB₆ and MgB₁₂ and also leading to formation of Mg(OH)₂ which is accompanied by decrease in the T_C and poor connectivity of the superconducting grains. When exposed to humid environment for a period of 30 days, a significant degradation was observed in the superconducting properties of MgB₂. In sharp contrast to the case of ambient exposure, the exposure of MgB₂ to humid atmosphere (for 30 days) did not result in any noticeable phase decomposition. A comparison of the magnetically inferred critical current density behavior before and after the humidity exposure of MgB₂ is also presented.     

X-ray photoemission study of MgB<Subscript>2</Subscript> films synthesized from in-situ annealed MgB<Subscript>2</Subscript>/Mg multilayers

Superconducting MgB₂ films were obtained by in-situ annealing of precursor multilayers deposited at low substrate temperature by sputtering from a MgB₂ stoichiometric target and by thermal evaporation of pure Mg. After an in-situ annealing at 500–600 °C, the films showed a zero resistance critical temperature up to 31 K. The as-obtained MgB₂ films were investigated by X-ray photoelectron spectroscopy (XPS) and X-ray auger electron spectroscopy (XAES). The electronic structure was studied by monitoring the B 1s, Mg 2p, O 1s core-levels and the Mg KL₂L₃ Auger line. For comparison, the electronic structure of an MgB₂ commercial superconducting sputtering target, of a not-annealed precursor film and of a sample obtained by direct sputtering from the MgB₂ target have also been investigated. Electron spectroscopy showed that in the superconducting systems the Mg KL₂L₃ Auger line kinetic energy position is always higher by about 0.9 eV with respect to the energy position of the same Auger line measured in the non-superconducting samples. PACS 74.25Jb; 74.78.Bz; 74.70.Ad     

Raman spectroscopic study of carbon substitution in MgB2

We study the effect of carbon doping on the Raman spectrum of the MgB₂ superconductor. Out data show that significant changes in the Raman spectra of the MgB_2−xC_x compounds occur for carbon concentrations x>0.04. The E_2g mode at ∼580 cm⁻¹ hardens only moderately upon increased doping despite direct carbon substitution in the boron layers, while the dependence of its full width at half maximum (FWHM) on x reveals the competing effects of reduced electron-phonon coupling and increased disorder. The results are discussed in the framework of anisotropic lattice contraction and the position of the σ sub-bands with respect to the Fermi energy level. The relative intensity of the phonon peak at ∼770 cm⁻¹, associated with a peak in the phonon density of states, increases considerably and dominates for x=0.08. Additionally, it hardens and broadens with increasing x in the range 0.04-0.08. These changes can be associated with carbon substitution-induced disorder in the investigated samples.     

Investigate the effect of anisotropic order parameter on the specific heat of anisotropic two-band superconductors

The effect of anisotropic order parameter on the specific heat of anisotropic two-band superconductors in BCS weak-coupling limit is investigated. An analytical specific heat jump and the numerical specific heat are shown by using anisotropic order parameters, and the electron–phonon interaction and non-electron–phonon interaction. The two models of anisotropic order parameters are used for numerical calculation that we find little effect on the numerical results. The specific heat jump of MgB₂, Lu₂Fe₃Si₅ and Nb₃Sn superconductors can fit well with both of them. By comparing the experimental data with overall range of temperature, the best fit is Nb₃Sn, MgB₂, and Lu₂Fe₃Si₅ superconductors.