Low-voltage antimony-doped SnO2 nanowire transparent transistors gated by microporous SiO2-based proton conductors

A battery drivable low-voltage transparent lightly antimony（Sb）-doped SnO2 nanowire electric-double-layer （EDL） field-effect transistor （FET） is fabricated on an ITO glass substrate at room temperature. An ultralow operation voltage of 1 V is obtained on account of an untralarge specific gate capacitance （- 2.14 μF/cm2） directly bound up with mobile ions-induced EDL （sandwiched between the top and bottom electrodes） effect. The transparent FET shows excellent electric characteristics with a field-effect mobility of 54.43 cm2/V. s, current on/off ration of 2 × 104, and subthreshold gate voltage swing （S = dVgs/d（logIds）） of 140 mV/decade. The threshold voltage Yth （0.1 V） is estimated which indicates that the SnO2 namowire transistor operates in an n-type enhanced mode. Such a low-voltage transparent nanowire transistor gated by a microporous SiO2-based solid electrolyte is very promising for battery-powered portable nanoscale sensors.     

纳米晶SnO2透明导电薄膜的研制

阐述了金属氧化物透明导电薄膜研究的发展情况及其应用前景。介绍了采用磁控溅射技术,使用混合气体Ar和O     

Electroless deposition of Sno2 and antimony doped SnO2 films

Thin polycrystalline films of SnO₂ and antimony doped SnO₂ have been prepared by simple economic electroless deposition technique. The transmittance in the visible range and the reflectance in the i.r. range for SnO₂ films are ～80% and ～70%, respectively, with resistivity ～10^?2 Ω cm. On the other hand, antimony doped SnO₂ films have transmittance in the visible range and reflectance in the i.r. range, as good as ～86% and ～83%, respectively, with resistivity as low as ～10^?3Ω cm. By vacuum annealing, the resistivity of both types of films has been brought down as low as ～10^?3 and ～10^?4 Ω cm, respectively.     

Carrier decay process of nanoscaled SiGe particles embedded in SiO2 matrix

Nanoscaled SiGe particles (NPs) are formed by ions implantation and annealing treatment methods. For any sample, the total dose of Si and Ge dopants is 3×10¹⁶ cm⁻². Strong photoluminescence (PL) peaks centered around red emission region are observed. This PL peak red shifts from 653 nm–695 nm with the increase of Ge-doping dose, which is ascribed to the quantum confinement effect. The PL lifetime spectra exhibit a stretched exponential decay with characteristic decay time τ varying from 50.2–23.1 μs and dispersion factor β in the range of 0.67–0.86.     

Enhancement of carrier mobility in pentacene thin-film transistor on SiO2 by controlling the initial film growth modes

Pentacene thin-film transistors (TFTs) were fabricated on thermally grown SiO₂ gate insulator under the conditions of various pre-cleaning treatments. Initial nucleation and growth of the material films on treated substrates were observed by atomic force microscope. The performance of fabricated TFT devices with different surface cleaning approaches was found to be highly related to the initial film morphologies. In contrast to the three-dimensional island-like growth mode on SiO₂ under an organic cleaning process, a layer-by-layer initial growth occurred on the SiO₂ insulator cleaned with ammonia solution, which was believed to be the origination of the excellent electrical properties of the TFT device. Field effect mobility of the TFT device could achieve as high as 1.0 cm²/Vs on the bared SiO₂/Si substrate and the on/off ratio was over 10⁶.     

具有高阻抗本征SnO2过渡层的CdS/CdTe多晶薄膜太阳电池

采用超声喷雾热解法制备了具有高阻抗的本征SnO₂透明导电膜，将其运用在CdS层减薄了的CdS/CdTe多晶薄膜太阳电池中，对减薄后的CdS薄膜进行了XRD,AFM图谱分析，并对电池进行了光、暗I-V，光谱响应和C-V测试.结果表明，在高阻膜上沉积的减薄CdS薄膜(111)取向更明显，但易形成微孔.引入高阻层后，能消除CdS微孔形成的微小漏电通道，有效保护p-n结，改善了电池的并联电阻、填充因子和短波响应，使载流子浓度增加，暗饱和电流密度减小，从而电池性能得到改善，电池转换效率增加了14.4%. 关键词： CdTe电池 过渡层 效率     

合成温度和N2/O2流量比对碳纤维衬底上生长的SnO2纳米线形貌及场发射性能影响

采用化学气相沉积法系统研究了合成温度和N₂/O₂流量对生长在碳纤维衬底上的SnO₂纳米线形貌及场发射性能的影响规律. 利用扫描电镜(SEM)、透射电镜(TEM), X射线衍射(XRD)及能谱仪(EDS)对产物细致表征, 结果表明, SnO₂纳米线长径比随反应温度的升高而增大; 随N₂/O₂流量比值的增大先增大后变小, 场发射测试表明, 合成温度780 ℃, N₂/O₂流量比为300 : 3 时SnO₂纳米线阵列具有最佳的场发射性能, 开启电场为1.03 V/μm, 场强增加到1.68 V/μm时, 发射电流密度达0.66 mA/cm², 亮度约2300 cd/m².     

石墨烯封装单层二硫化钼的热稳定性研究

将单层二硫化钼用石墨烯进行封装,构造了石墨烯和二硫化钼的范德瓦耳斯异质结构,并且分别在氩气（Ar）和氢气（H₂）氛围下,详细研究了被封装的二硫化钼的热稳定性.结果表明：在氩气氛围中,石墨烯封装的二硫化钼在400–1000℃下一直保持稳定,而石墨烯和氧化硅上裸露的二硫化钼在1000℃时几乎全部分解;在氢气氛围中,石墨烯封装的二硫化钼在400–1000℃下一直稳定存在,而石墨烯和氧化硅上裸露的二硫化钼在800℃下已经完全分解.综上可得,在氩气和氢气的氛围下,被石墨烯封装的二硫化钼的热稳定性得到了显著的提高.该研究通过用石墨烯将单层的二硫化钼进行封装以提高其热稳定性,在未来以单层二硫化钼作为基础材料的电子器件中,可以保证其在高温下能够正常工作.该研究也为提高其他二维材料的热稳定性提供了一种可行的方法和思路.     

Controlling the electronic structure of SnO2 nanowires by Mo-doping

Mo-doped SnO2 (MTO) nanowires are synthesized by an in-situ doping chemical vapour deposition method. Raman scattering spectra indicate that the lattice symmetry of MTO nanowires lowers with the increase of Mo doping, which implies that Mo ions do enter into the lattice of SnO2 nanowire. Ultraviolet-visible diffuse reflectance spectra show that the band gap of MTO nanowires decreases with the increase of Mo concentration. The photoluminescence emission of SnO2 nanowires around 580 nm at room temperature can also be controlled accurately by Mo-doping, and it is extremely sensitive to Mo ions and will disappear when the atomic ratio reaches 0.46%.     

First principles study of small cobalt clusters encapsulated in C60 and C82 spherical nanocages

Structural, electronic and magnetic properties of the small Co_n clusters (n = 2-7) endohedrally doped in C₆₀ (Ih) and C₈₂ (C2v) fullerenes were investigated using ab initio calculations based on the density functional theory. It is found that the encapsulated Co_n clusters inside C₆₀ and C₈₂ cages are energetically favorable except for Co₇@C₆₀. The encapsulation does not change significantly the structure of the enclosed clusters, but the magnetic moment of the clusters reduces due to a stronger Co-C hybridization for the larger clusters.     

基于P掺杂SiO2为栅介质的超低压侧栅薄膜晶体管

在室温下利用等离子体增强化学气相沉积法(PECVD)制备的颗粒膜P掺杂SiO₂为栅介质, 使用磁控溅射方法利用一步掩模法制备出一种新型结构的侧栅薄膜晶体管. 由于侧栅薄膜晶体管具有独特的结构, 在射频磁控溅射过程中, 仅仅利用一块镍掩模板, 无需复杂的光刻步骤, 就可同时沉积出氧化铟锡(ITO)源、漏、栅电极和沟道, 因此, 这种方法极大地简化了制备流程, 降低了工艺成本. 实验结果表明, 在P掺杂SiO₂栅介质层与沟道层界面处形成了超大的双电层电容(8 μF/cm²), 这使得这类晶体管具有超低的工作电压1 V, 小的亚阈值摆幅82 mV/dec、高的迁移率18.35 cm²/V·s和大的开关电流比1.1×10⁶. 因此, 这种P掺杂SiO₂双电层超低压薄膜晶体管将有望应用于低能耗便携式电子产品以及新型传感器领域. 关键词： 2')" href="#">P掺杂SiO₂ 侧栅薄膜晶体管 双电层(EDL) 超低压     

H2O induced structural modification of pentacene crystal

Water is one of the obstacles for prolonged life-time of organic based field-effect-transistors (OFETs). Here, we show how H₂O molecules adsorb and affect pentacene crystal by using photoelectron spectroscopic methods. Diffusion into the crystal is accompanied with accumulation of H₂O onto the crystal. Valence band, core level, and X-ray absorption spectra show that H₂O molecules physisorb on the pentacene surface via oxygen, resulting in the increase of the hole-injection barrier. The diffused molecules results in the deteriorated crystallinity, and they reflect the weakening inter-molecular interactions of pentacene crystal.     

Synthesis of BaF2:Ce nanophosphor and epoxy encapsulated transparent nanocomposite

BaF₂:Ce nanophosphors with a peak emission at 355 nm were synthesized using a chemical precipitation method with oleic acid as the capping ligands. The cerium doping concentration was optimized and it was found that the photoluminescence intensity reached a maximum at about 15 mol% of Ce doping. Two distinct photoluminescence excitation peaks were observed from all samples at about 255 and 290 nm. The nanophosphors were incorporated into an epoxy matrix to form bulk nanocomposite samples for potential scintillation applications. Index matching between the nanophosphor and the epoxy matrix is critical to obtain high transparency.     

Emission properties of laser ablation of SnO2: Sb transparent conducting film and KTiOPO4 crystal

Optical emission spectra of Nd:YAG laser ablation of KTiOPO₄ (KTP) crystal and SnO₂:Sb transparent conducting thin film were recorded and analyzed in vacuum and in air. The integral intensities of spectral lines from laser-ablated KTP crystal were obtained as functions of distance from the target surface and laser power density in vacuum and in air. The ambient gas effects on pulsed laser ablation of target were discussed. We also performed laser ablation of SnO₂:Sb transparent conducting thin film in air and the electron temperature and full-width at half-maximum (FWHM) of atomic and ionic spectral lines in the plasma were quantified using Boltzmann plot method and Lorentzian fit, respectively. Integral intensities of atomic and ionic Sn spectral lines were also obtained as functions of distance from the target surface and laser irradiance. The intensity ratio of ionic and atomic Sn spectral lines as a function of laser power density was got which gives some information about the variation of ionization ratio with laser irradiance in the plasma produced by high-power laser.     

Study of ZnO-coated SnO2 nanostructures synthesized by a two-step process

We investigated the influence of the ZnO coating on the properties of one-dimensional (1D) nanostructures of SnO₂. We have employed X-ray diffraction, scanning electron microscope, transmission electron microscope and photoluminescence (PL) spectroscopy to characterize both as-synthesized and ZnO-coated products. We observed that deposition process of ZnO by using an atomic layer deposition technique resulted in the SnO₂ core/ZnO shell structure. The photoluminescence of the ZnO-coated products exhibited broad bands in the UV and green region, suggesting a possible contribution of the emission from the ZnO outlayers.     

氧氩比对SnO2/Ag/SnO2透明导电膜光电性能的影响

在室温及不同的氧氩比条件下,采用射频磁控溅射Ag层和直流磁控溅射SnO₂层,在载玻片衬底上制备出了SnO₂/Ag/SnO₂多层薄膜.用霍尔效应测试仪、四探针电阻测试仪和紫外-可见-近红外光谱仪等表征了薄膜的电学性质和光学性质.实验结果表明:当氧氩比为1:14时,所制得的薄膜的光电性质优良指数最大,为1.69×10^-2 Ω^-1;此时,薄膜的电阻率为9.8×10^-5 Ω·cm,方电阻为9.68 Ω/sq,在400~800 nm可见光区的平均光学透射率达85%;并且,在氧氩比为1:14时,利用射频磁控溅射Ag层和直流磁控溅射SnO₂层在PET柔性衬底上制备出了光电性质优良的柔性透明导电膜,其在可见光区的平均光学透过率达85%以上,电阻率为1.22×10^-4 Ωcm,方电阻为12.05 Ω/sq.     

SnO2:Zr薄膜对SO2气体的光学气敏特性研究

采用双靶反应溅射制得SnO₂:Zr薄膜,并对它作了150°C下SO₂气敏光学特性试验,首次发现在适当工艺条件下制得的SnO₂:Zr薄膜在近红外波段(1.7～3μm)对SO₂气体具有明显的光学气敏特性,在2.65μm附近透过率上升幅度达10%左右.Zr的引入增强了SnO₂薄膜对SO₂的吸附能力.用二次离子质谱对吸附SO₂前后的薄膜作了组分相对含量分析.本实验结果对今后研究高性能SO₂气敏传感器有一定的价值.     

P/Si-TiO2 transparent films with high anatase stability and photocatalytic activity

The anatase-TiO₂ transparent films, containing 3 mol% of Si and P elements (as dopants), were synthesized using a process combining the sol-gel method and spin-coating technique. Effects of relative ratio of dopants and calcination temperature on phase transformation, grain growth, surface morphology, light transmittance, band-gap energy and photocatalytic activity of the P/Si-TiO₂ films were examined and their results were compared with those of the undoped-TiO₂ and Si-TiO₂ films. The P/Si-TiO₂ films calcined at temperature between 600 and 900 °C adhered strongly to the surface of fused-silica substrate and were composed of anatase-TiO₂ monophase. The photocatalytic activities of the films were measured and represented using a characteristic time constant (τ) for the methylene blue (MB) photodegradation. The small τ stands for high photocatalytic ability of the film. The P/Si-TiO₂ film, containing equalmolar Si and P dopants, calcined at 800 °C gave the best performance in photocatalysis; this film had τ=5.7 h and decomposed about 90 mole% of MB in the water after 12 h of the 365-nm UV light irradiation.     

The influence of interfacial barrier engineering on the resistance switching of In2O3：SnO2/TiO2/In2O3：SnO2 device

The I-V characteristics of In2O3：SnO2/TiO2/In2O3：SnO2 junctions with different interracial barriers are inves- tigated by comparing experiments. A two-step resistance switching process is found for samples with two interfacial barriers produced by specific thermal treatment on the interfaces. The nonsynchronous occurrence of conducting filament formation through the oxide bulk and the reduction in the interracial barrier due to the migration of oxygen vacancies under the electric field is supposed to explain the two-step resistive switching process. The unique switching properties of the device, based on interracial barrier engineering, could be exploited for novel applications in nonvolatile memory devices.     

Growth Mechanism and Characterization of Single-crystalline Ga-doped SnO2 Nanowires and Self-organized SnO2/Ga2O3 Heterogeneous Microcomb Structures

Ga掺SnO2单晶纳米线和SnO2/Ga2O3自组织异质微米梳是通过简单的热蒸发沉淀法一步制得的,并通过X射线粉末衍射(XRD)、场激发扫描电子显微镜(FE-SEM)、透射电子显微镜(TEM)、X射线能量散射谱仪(EDS)、选区电子衍射谱(SAED)进行表征．从FE-SEM的图片上可以看出生成的产物具有纳米线和一种新的微米梳状形貌．XRD、SAED和EDS显示他们是单晶四角形的SnO2．产物的主干呈带状,纳米带阵列均匀的分布在主干的一侧或两侧．大量的Ga2O3纳米颗粒沉积在微米梳的表面．主干纳米带主要沿着[100]方向生长, 自组织的纳米带分支则在主干的(100)面上沿着[110]或者[110]方向生长．由于Ga的大量掺杂,光致发光谱的衍射峰发生红移并严重变宽．针对SnO2:Ga2O3异质微米梳的生长过程进行了解释,并讨论了实验条件对形貌的影响．