首页 | 本学科首页   官方微博 | 高级检索  
相似文献
 共查询到20条相似文献,搜索用时 15 毫秒
1.
The effect of thermo-hygro-mechanical (THM) densification temperature on the surface color, roughness, wettability, and chemical composition of trembling aspen (Populus tremuloides) and hybrid poplar (Populus maximowiczii × P. balsamifera) veneers was investigated. Veneers were subjected to four THM densification temperatures (160 °C, 180 °C, 200 °C, and 220 °C). Veneer color darkened with increasing THM densification temperature. Surface roughness decreased between 160 °C and 200 °C. Wettability decreased after THM densification, but no significant difference was found between treated specimens. ATR-FTIR and XPS results confirmed that THM densification caused major chemical changes in veneer surfaces, and more pronounced at temperatures higher than 160 °C.  相似文献   

2.
The surface quality of CdZnTe plays an important role in the performance of sensors based on this material. In this paper the effect of chemical etching on Cd0.9Zn0.1Te sensor performance was examined. Sample surfaces were treated with the same concentration 2% Br-MeOH for different etching times (30 s, 2, 4, 6, 8 min). The surfaces were characterized by Scanning Electron Microscopy (SEM), Atomic Force Microscopy (AFM), and I-V Measurement. These results demonstrate that the best surface quality can be obtained by chemical etching for 30 s. Under these experimental conditions, the surface composition Te/Cd + Zn approaches 1, the roughness is lower than 3 nm, and the leakage current shows a value lower than 10 nA.  相似文献   

3.
In this paper, the influence of four types of imidazolium-based ionic liquids (ILs) on the surface properties of common aspen (Populus tremula) veneers has been studied by using contact angle, electrical conductivity and Fourier transform infrared spectroscopy analysis. The measurements showed that wood wettabillity is increased by IL treatment. The electrical conductivities of treated wood were in the 0.5-1 mS/cm range, higher than the ones reported in the reference literature. It has been determined that the ILs decrease the crystallinity and improve the flexibility of the cellulose matrix. It has been determined by photographic image analysis that the surface roughness of the IL treated veneers decreases in comparison with the untreated samples.  相似文献   

4.
Alkali-treated titanium surfaces have earlier shown to induce bone-like apatite deposition. In the present study, the effect of surface topography of two-dimensional and pore architecture of three-dimensional alkali-treated titanium substrates on the in vitro bioactivity was investigated. Titanium plates with a surface roughness of Ra = 0.13 μm, 0.56 μm, 0.83 μm, and 3.63 μm were prepared by Al2O3 grit-blasting. Simple tetragonal and face-centered Ti6Al4V scaffolds with spatial gaps of 450-1100 μm and 200-700 μm, respectively, were fabricated by a three-dimensional fiber deposition (3DFD) technique. After alkali treatment, the titanium plates with a surface roughness of Ra = 0.56 μm were completely covered with hydroxyapatite globules after 7 days in simulated body fluid (SBF), while the coverage of the samples with other surface roughness values remained incomplete. Similarly, face-centered Ti6Al4 scaffolds with spatial gaps of 200-700 μm exhibited a full surface coverage after 21 days in SBF, while simple tetragonal scaffolds with spatial gaps of 450-1100 μm were only covered for 45-65%. This indicates the importance of surface topography and pore architecture for in vitro bioactivity.  相似文献   

5.
Hydroxyapatite (HA) coatings with different surface roughnesses were deposited on a Ti substrate via aerosol deposition (AD). The effect of the surface roughness on the cellular response to the coating was investigated. The surface roughness was controlled by manipulating the particle size distribution of the raw powder used for deposition and by varying the coating thickness. The coatings obtained from the 1100 °C-heated powder exhibited relatively smooth surfaces, whereas those fabricated using the 1050 °C-heated powder had network-structured rough surfaces with large surface areas and were superior in terms of their adhesion strengths and in vitro cell responses. The surface roughness (Ra) values of the coatings fabricated using the 1050 °C-heated powder increased from approximately 0.65 to 1.03 μm as the coating thickness increased to 10 μm. The coatings with a rough surface had good adhesion to the Ti substrate, exhibiting high adhesion strengths ranging from 37.6 to 29.5 MPa, depending on the coating thickness. The optimum biological performance was observed for the 5 μm-thick HA coating with an intermediate surface roughness value of 0.82 μm.  相似文献   

6.
The experimental results on the synthesis of tetraethoxysilane (TEOS)-based silica aerogel with high specific surface area and large pore volume, via ambient pressure drying (APD) route, are reported. The silica aerogels were prepared by the acid-base sol-gel polymerization of TEOS precursor followed by the drying of the alcogels at an ambient pressure. The solvent present in the alcogel (i.e. ethanol) was replaced by a non-polar solvent such as hexane prior to the surface modification step. In order to minimize the drying shrinkage, the surface of the gels was modified using trimethylchlorosilane (TMCS) before the APD. The FTIR spectra of the surface modified aerogels showed Si-CH3 peaks at 2965 and 850 cm−1. The effect of the base catalyst (NH4OH) addition to the sol, at different time intervals (T), on the physical and textural properties of the resulting aerogels has been investigated. It has been observed that the surface area and the cumulative pore volume of the aerogels enhanced considerably from 819 to 1108 m2 g−1 and 2.65 to 4.7 cm3 g−1, respectively with an increase in the T value from 6 to 48 h. Silica aerogels with very low bulk density (0.06 g cm−3), extremely high specific surface area (1108 m2 g−1) and large cumulative pore volume (4.7 cm3 g−1) could be synthesized by drying the alcogels at the ambient pressure. The aerogels were mesoporous solids with the average pore size ranging from 12 to 17 nm. The results have been discussed by taking into consideration the hydrolysis and condensation reactions during the sol-gel polymerization of the TEOS precursor.  相似文献   

7.
Energy barriers for trimethylaluminum (TMA) reaction with varying surface hydroxyl (-OH) density were investigated using density functional theory. When the surface -OH density increased from 0 to 6.8/nm2 on Si (0 0 1) surfaces, the energy barrier for TMA reaction with the surfaces decreased due to attractive interactions between TMA and -OH. When the surface -OH density further increased to 9.2/nm2 on a-SiO2 (0 0 1) surfaces, however, the trend was reversed. This was because the attractive interactions between TMA and -OH were decreased due to the attractive interactions of -OH's themselves via hydrogen bond at this high surface -OH density.  相似文献   

8.
The empirical electron surface model (EESM) based on the empirical electron theory and the dangling bond analysis method has been used to establish a database of surface energy for low-index surfaces of fcc-metals such as Al, Mn, Co, Ni, Cu, Pd, Ag, Pt, Au, and Pb. A brief introduction of EESM will be presented in this paper. The calculated results are in agreement with experimental and other theoretical values. Comparison of the experimental results and calculation values shows that the average relative error is less than 10% and these values show a strong anisotropy. As we predicted, the surface energy of the close-packed plane (1 1 1) is the lowest one of all index surfaces. For low-index planes, the order of the surface energies is γ(1 1 1) < γ(1 0 0) < γ(1 1 0) < γ(2 1 0). It is also found that the dangling bond electron density and the spatial distribution of covalent bonds have a great influence on surface energy of various index surfaces.  相似文献   

9.
DFT calculations are employed to bulk and surface properties of spinel oxide Co3O4. The bulk magnetic structure is calculated to be antiferromagnetic, with a Co2+ moment of 2.631 μB in the antiferromagnetic state. There are three predicted electron transitions O(2p) → Co2+(t2g) of 2.2 eV, O(2p) → Co3+(eg) of 2.9 eV and Co3+(t2g) → Co2+(t2g) of 3.3 eV, and the former two transitions are close to the corresponding experimental values 2.8 and 2.4 eV. The naturally occurring Co3O4 (1 1 0) and (1 1 1) surfaces were considered for surface calculations. For ideal Co3O4 (1 1 0) surfaces, the surface relaxations are not significant, while for ideal Co3O4 (1 1 1) surfaces the relaxation of Co2+ cations in the tetrahedral sites is drastic, which agrees with the experiment observation. The stability over different oxygen environments for possible ideal and defect surface terminations were explored.  相似文献   

10.
The effect of surface roughness on subsequent growth of vanadium pentoxide (V2O5) nanowires is examined. With increasing surface roughness, both the number density and aspect ratio of V2O5 nanowires increase. Structures and morphology of obtained nanowires were characterized by field emission scanning electron microscopy (FE-SEM) and X-ray diffraction (XRD). The nanowires are approximately 40-90 nm in diameter and 2 μm in length. X-ray diffraction (XRD) analysis indicates that the obtained nanowires are orthorhombic structure with (0 0 1) out-of-plane orientation. The luminescence property of V2O5 nanowires has been investigated by photoluminescence (PL) at 150 K and 300 K. PL results show intense visible emission, which is attributed to different inter-band transitions between the V 3d and O 2p band. This simple fabrication approach might be useful for fabrication of large area V2O5 nanowires arrays with high density.  相似文献   

11.
We report the effect of substrate temperature (Tsub) in the range 300-900 K on the surface roughness of silicon wafer resulted from femtosecond laser ablation. The surface roughness observed at the laser fluences less then 0.3 J/cm2 increases with increasing Tsub. However, the surface roughness decreases with increasing Tsub for the laser fluences between 0.5 and 1.0 J/cm2. If the laser fluence is higher than 2.0 J/cm2, the surface roughness is independent of Tsub. The effect of Tsub on the surface roughness can be understood in terms of the temperature dependence of optical absorption coefficient of silicon substrate, which eventually alters a mechanism underlying the fs-laser-material ablation process between optical penetration and thermal diffusion processes.  相似文献   

12.
The BCN thin films were produced by dual ion beam sputtering deposition (DIBSD). The influence of assisted ion energy on surface roughness and mechanical properties of BCN films were investigated. The surface roughness was determined by atomic force microscopy (AFM) and the mechanical properties of BCN firms were evaluated by nano-indentation in N2 gas. The composition, structure and chemical bonding of the BCN thin films were analyzed by using energy dispersive spectroscopy (EDS), transmission electron microscopy (TEM), laser Raman spectroscopy and Fourier transform infrared spectroscopy (FTIR). These films appeared as amorphous structure. As a result, the BCN films with the smoothest surface (Ra = 0.35 nm and Rp-v = 4.4 nm) and the highest nano-hardness of 30.1 GPa and elastic modulus of 232.6 GPa were obtained at 200 eV and 12 mA with N2:Ar = 1:1, and the chemical composition of this BCN film was 81 at.% B, 14 at.% C and 5 at.% N. Moreover, several bonding states such as B-N, B-C and C-N were observed in BCN thin films.  相似文献   

13.
For the microfluidic chip, the surface roughness of the chamber sidewall is an important parameter in estimating its quality. In this work, the chambers of the polymethyl methacrylate (PMMA)-based microfluidic chip were fabricated by CO2 laser cutting, and then the surface roughness of the sections cut using different laser parameters and ambient temperature was studied by a non-contact 3D surface profiler. Our observation shows that the surface roughness results primarily from the residues on the laser-cut edge, which are produced by the bubbles bursting. To reduce the surface roughness of the cut section, a new approach is proposed, that is preheating the PMMA sheet to a suitable ambient temperature during laser processing. The results indicate that at a preheat temperature of 70-90 °C, the surface roughness resulting from the cut would be reduced. In our experiment, the best result was that the arithmetical mean roughness is Ra = 100.86 nm when the PMMA sheet was heated to 85 °C.  相似文献   

14.
We have studied the influence of oxygen pressure during the cyclic annealing used for the cleaning of W(1 1 0) surfaces. For this purpose the surface morphology and electronic properties are measured by means of scanning tunneling microscopy (STM) and spectroscopy (STS), respectively. It is found that the surfaces with impurity atom densities as low as 2 × 10−3 can be obtained by gradually reducing the oxygen pressure between subsequent annealing cycles down to about 2 × 10−8 mbar in the final cycle. Only on the clean surface a bias-dependent spatial modulation of the local density of states (LDOS) is observed at step edges and around impurity sites by STS. In addition, we find a pronounced peak in the occupied states. In combination with density functional theory calculations these features can be traced back to a dispersive pz-dxz-type surface resonance band and the lower band edge of a surface state, respectively.  相似文献   

15.
In analogy with the case of Sr on Si [Y. Liang, S. Gan, M. Engelhard, Appl. Phys. Lett. 79 (2001) 3591], we studied surface crystallinity and oxidation behaviour of clean and Ba terminated Ge(1 0 0) surfaces as a function of oxygen pressure and temperature. The structural and chemical changes in the Ge surface layer were monitored by LEED, XPS and real-time RHEED. In contrast to the oxidation retarding effect, observed for 1/2 monolayer of Sr on Si, the presence of a Ba termination layer leads to a pronounced increase in Ge oxidation rate with respect to clean Ge. In fact, while the Ge(1 0 0) surface terminated with 1/2 ML Ba amorphizes for a pO2 of 10−2 Torr, LEED indicates that clean Ge forms a thin (4.5 Å), 1 × 1 ordered oxide upon aggressive O2 exposure (150 Torr, 200 °C, 30 min). We briefly discuss the origins for the difference in behaviour between Ba on Ge and Sr on Si.  相似文献   

16.
A model is proposed for calculating the co-energy of surface and grain boundary (GB) by the modified analytical embedded atom method (MAEAM). As example, the energy densities Ed of the two adjacent grains are obtained when their (0 0 1) twist GB meets the free surface (h1 k1 0)/(h2 k2 0) of Ag film. The period along the boundary line on the surface is found and the energy density is calculated for the situations either with or without periodicity. The results show that, the energy value achieved via this model can be stable even for most grains with boundary line smaller than 100 nm. Among the grains with (h k 0) surface, (1 0 0) grains should be favored and grow fastest when they meet (1 1 0) grains.  相似文献   

17.
ZrNx films were sputtered in an Ar + N2 atmosphere, with different substrate biases (0 to −200 V) at various nitrogen flow ratios (%N2 = 0.5-24%). The surface morphology, resistivity, crystllinity, and bonding configuration of ZrNx films, before and after vacuum annealing, were investigated. As compared with ZrNx films grown without substrate bias, before and after annealing, the resistivity of 1% and 2% N2 films decreases with increasing substrate biases. Simultaneously, if the applied bias is too high, the crystallinity of ZrNx film will decrease. The surfaces of 1% and 2% N2 flow films deposited without bias have small nodules, whereas the surface morphology of films deposited at −100 V of substrate bias exhibits large nodules and rugged surface. Once a −200 V of substrate bias is applied to the substrate, the surface morphology of ZrNx films, grown at 1% and 2% nitrogen flow ratios, is smooth. Furthermore, there are two deconvoluted peaks in XPS spectra (i.e., Zr-O and Zr-N) of ZrNx films deposited at −200 V of substrate bias before and after annealing. On the other hand, the surface morphology changes dramatically from rugged surfaces for film deposited at lower nitrogen flow ratio (%N2 < 1%) to smoother and denser surfaces for film grown at higher nitrogen flow ratio (%N2 ≥ 1%). The Zr-N bonding in 2% N2 films still exist after annealing at 700 °C, while the Zr-N bonding in 0.5% and 16% N2 flow film vanish at the same temperature. The connection between the resistivity, crystallinity, surface morphology, and bonding configuration of ZrNx films and how they are influenced by the substrate bias and nitrogen flow ratio are discussed in this paper.  相似文献   

18.
The optimized structure of the WO3(0 0 1) surface with various types of termination ((1 × 1)O, (1 × 1)WO2, and c(2 × 2)O) has been simulated using density functional theory with the Perdew-Wang 91 gradient corrected exchange-correlation functional. While the energy of bulk WO3 depends weakly on the distortions and tilting of the WO6 octahedra, relaxation of the (0 0 1) surface results in a significant decrease of surface energy (from 10.2 × 10−2 eV/Å2 for the cubic ReO3-like, c(2 × 2)O-terminated surface to 2.2 × 10−2 eV/Å2 for the relaxed surface). This feature illustrates a potential role of surface relaxation in formation of crystalline nano-size clusters of WO3. The surface relaxation is accompanied by a dramatic redistribution of the density of states near the Fermi level, in particular a transformation of surface electronic states. This redistribution is responsible for the decrease of electronic energy and therefore is suggested to be the driving force for surface relaxation of the WO3(0 0 1) surface and, presumably, similar surfaces of other transition metal oxides.  相似文献   

19.
A criterion is developed to predict the resulting evolution process of the following surface defects on thin (17 nm) polystyrene (PS) films on silicon (Si): (i) nanoindentation-induced indents which grow after being heated above the glass transition temperature of PS, Tg, leading to dewetting; (ii) nanoindentation-induced indents which level at temperatures above the Tg, resulting in a flat polymer surface and (iii) indents which are formed and grow spontaneously by thermal treatment above the Tg (thermal film break up). The criterion is based on the concept of the excess surface energy, ΔFγ, which was introduced in previous reports for cases (i) and (ii). Here, a similar energetic term is used which corresponds only to the effect of the depressions, ΔFγ(D). The effect of the rims which surround the depressions in cases (i) and (ii) is not taken into account. Measurements of ΔFγ(D), performed by atomic force microscopy, prior to any treatment above the Tg suggest that growing depressions (cases i and iii) correspond to ΔFγ(D) > 1.5 × 10−16 J while for healing depressions (case ii) ΔFγ(D) < 1.8 × 10−16 J. A critical region of ΔFγ(D) exists from 1.5 × 10−16 J to 1.8 × 10−16 J. Depressions which correspond to this, rather short, region can either grow or heal.  相似文献   

20.
This paper investigates the structure and surface characteristics, and electrical properties of the polycrystalline silicon-germanium (poly-Si1−xGex) alloy thin films, deposited by vertical reduced pressure CVD (RPCVD) in the temperature range between 500 and 750 °C and a total pressure of 5 or 10 Torr. The samples exhibited a very uniform good quality films formation, with smooth surface with rms roughness as low as 7 nm for all temperature range, Ge mole fraction up to 32% (at 600 °C), textures of 〈2 2 0〉 preferred orientation at lower temperatures and strong 〈1 1 1〉 at 750 °C, for both 5 and 10 Torr deposition pressures. The 31P+ and 11B+ doped poly-Si1−xGex films exhibited always lower electrical resistivity values in comparison to similar poly-Si films, regardless of the employed anneal temperature or implantat dose. The results indicated also that poly-Si1−xGex films require much lower temperature and ion implant dose than poly-Si to achieve the same film resistivity. These characteristics indicate a high quality of obtained poly-Si1−xGex films, suitable as a gate electrode material for submicron CMOS devices.  相似文献   

设为首页 | 免责声明 | 关于勤云 | 加入收藏

Copyright©北京勤云科技发展有限公司  京ICP备09084417号