Protonated dye-surfactant ion pair formation between neutral red and anionic surfactants in aqueous submicellar solutions

Spectral and surface tension behavior of aqueous neutral red in the presence of sodium dodecyl sulfate (SDS), sodium dodecyl benzene sulfonate (SDBS) and sodium dodecyl sulfonate (SDSN) have been studied to understand the nature of the interactions in their submicellar concentration ranges. The variations in spectra and surface tension with variation in the concentrations of the surfactants suggest the formation of a 1:1 close-packed dye-surfactant ion pair, HNR⁺S⁻ between the acid form, HNR⁺ of the dye and the surfactant anion at very low concentrations of the surfactant below critical micelle concentration (cmc) of the pure surfactant. The dye-surfactant ion pair behaves like a nonionic surfactant having higher efficiency and lower cmc than that of the corresponding pure anionic surfactant. The ion pairs are adsorbed on the air/water interface at very low concentrations of the surfactant. As the concentration of the surfactant increases and the ion pairs form micelles of their own, the dye in the ion pair is protonated to form H₂NR²⁺S⁻. As the cmc of the pure surfactant is approached, the protonation equilibrium gradually reverses and pure surfactant ions gradually replace the ion pairs at the interface. Finally, a homogeneous monolayer of pure surfactant anions exists at the air/water interface and the dye remain solubilized in pure micelles above the cmc of the pure surfactant. The equilibrium constants, K_c for the close-packed protonated dye-surfactant ion pair (PDSIP) formation have been determined at varying pH. The submicellar interaction has been found to be stronger with SDS than SDBS. The plots of logarithm of K_c vs. pH have been found to be quite linear which consolidates the assumption of formation of the species, H₂NR²⁺S⁻. The interaction is driven by enthalpy as well as entropy.     

Peculiarities of electron field emission from ZnO nanocrystals and nanostructured films

ZnO microcrystals and nanocrystals were grown on silicon substrates by condensation from vapour phase. Nanostructured ZnO films were deposited by plasma enhanced metal organic chemical vapour deposition (PEMOCVD). The parameters of field emission, namely form-factor β and work function , were calculated for ZnO structures by the help of the Fowler–Nordheim equation. The work functions from ZnO nanostructured films were evaluated by a comparison method. The density of emission current from ZnO nanostructures reaches 0.6 mA/cm² at electric force F=2.110⁵ V/cm. During repeatable measurements β changes from 5.810⁴ to 2.310⁶ cm⁻¹, indicating improvement of field emission. Obtained values of work functions were 3.7±0.37 eV and 2.9–3.2 eV for ZnO nanostructures and ZnO films respectively.     

Effectiveness of ultrasound for the destruction of Mycobacterium sp. strain (6PY1)

Ultrasound is widely used to disinfect drinking water and wastewater due to its strong physical and chemical effects on microorganisms. The aim of this study was to investigate the effect of ultrasound on the destruction of Mycobacterium strain 6PY1. Ultrasound waves (20 kHz or 612 kHz) were used to treat aqueous suspensions of Mycobacterium at different volumes, initial bacterial concentrations, and power densities. At the same power density and the same exposure time, sonication at high frequency resulted in a lower destruction of Mycobacterium sp. 6PY1 (35.5%) than sonication at low frequency (93%). The percentage of removal was not significantly affected by the volume of the irradiated suspension (150–300 ml) or the initial cell concentration (2.15 × 10⁻³–1.4 × 10⁻² mg protein L⁻¹). At low frequency, the removal percentage of Mycobacterium sp. 6PY1 increased with increasing the power density, with a constant level reached after a certain power density. At high frequency, the removal percentage of Mycobacterium sp. 6PY1 increased with increasing the power density. The mechanism of cell killing was investigated by examining the effects of OH radical scavengers such as sodium carbonate. At high frequency the presence of sodium carbonate suppressed the removal process. However, at low frequency the removal process was not affected, thus indicating that OH radicals have a negligible role in this case. The latter result was supported by ten time’s H₂O₂ production at high frequency greater than that at low frequency.     

Dielectric/piezoelectric properties and temperature dependence of domain structure evolution in lead free single crystal

(K_0.5Na_0.5)NbO₃ (KNN) single crystals were grown using a high temperature flux method. The dielectric permittivity was measured as a function of temperature for [001]-oriented KNN single crystals. The ferroelectric phase transition temperatures, including the rhombohedral–orthorhombic T_R−O, orthorhombic–tetragonal T_O−T and tetragonal–cubic T_C were found to be located at −149  C, 205 C and 393 C, respectively. The domain structure evolution with an increasing temperature in [001]-oriented KNN single crystal was observed using polarized light microscopy (PLM), where three distinguished changes of the domain structures were found to occur at −150  C, 213 C and 400 C, corresponding to the three phase transition temperatures.     

The extraction of total cross section from

We report on the first measurement of the differential cross section of -meson photoproduction for the d(γ,pK⁺K⁻)n exclusive reaction channel. The experiment was performed using a tagged-photon beam and the CEBAF Large Acceptance Spectrometer (CLAS) at Jefferson Lab. A combined analysis using data from the d(γ,pK⁺K⁻)n channel and those from a previous publication on coherent production on the deuteron has been carried out to extract the −N total cross section, σ_N. The extracted −N total cross section favors a value above 20 mb. This value is larger than the value extracted using vector-meson dominance models for photoproduction on the proton.     

Asymmetric di-jet production in polarized hadronic collisions

Using the collinear QCD factorization approach, we study the single-transverse-spin dependent cross section Δσ(S) for the hadronic production of two jets of momenta P₁=P+q/2 and P₂=−P+q/2. We consider the kinematic region where the transverse components of the momentum vectors satisfy PqΛ_QCD. For the case of initial-state gluon radiation, we show that at the leading power in q/P and at the lowest non-trivial perturbative order, the dependence of Δσ(S) on q decouples from that on P, so that the cross section can be factorized into a hard part that is a function only of the single scale P, and into perturbatively generated transverse-momentum dependent (TMD) parton distributions with transverse momenta .     

Improvement of cubic silicon carbide crystals grown from solution

Cubic-silicon carbide crystals have been grown from carbon-rich silicon solutions using the travelling-zone method. To improve the growth process, we investigated the effect of controlling more tightly some of the growth parameters. Using such improved growth conditions, our best sample is a 12 mm diameter and 3 mm long 3C–SiC crystal. It is grown on a (0001) 2 off, 6H–SiC seed and has 111-orientation. The low amount of silicon inclusions results in a reduced internal stress, which is demonstrated by the consideration of μ-Raman spectra collected at room temperature on a large number of samples.     

Velocity of electroweak bubble walls

We study the velocity of bubble walls in the electroweak phase transition. For several extensions of the Standard Model, we estimate the friction and calculate the wall velocity, taking into account the hydrodynamics. We find that deflagrations are generally more likely than detonations. Nevertheless, for models with extra bosons, which give a strongly first-order phase transition, the deflagration velocity is in general quite high, 0.1v_w0.6. Therefore, such phase transitions may produce an important signal of gravitational waves. On the other hand, models with extra fermions which are strongly coupled to the Higgs boson may provide a strongly first-order phase transition and small velocities, 10⁻²v_w10⁻¹, as required by electroweak baryogenesis.     

A comparative study of coordination between host polymers and Li ions in UV-cured gel polymer electrolytes

Crosslinked gel polymer electrolytes are prepared via free radical photo-polymerization of 1,6-hexanediol diacrylate (HDDA) or tri(ethylene glycol) diacrylate (TEGDA) with 1 M LiClO₄ dissolved in a solvent mixture of ethylene carbonate (EC) and propylene carbonate (PC). TEGDA-based gel polymer electrolytes containing a polar moiety of ethylene oxide exhibit relatively high ionic conductivities over a temperature range from − 15 to 65 °C in comparison to those based on HDDA. The coordination structure between polar moieties of a polymer backbone and Li⁺ ions is examined using a Fourier transform infrared (FT-IR) spectroscopy. The results of FT-IR analyses manifest that the CO and COC groups of TEGDA-based polymer matrix form the complex with Li⁺ ions.     

Experimental and numerical investigation of the hetero-/homogeneous combustion of lean propane/air mixtures over platinum

The pure heterogeneous and the coupled hetero-/homogeneous combustion of fuel-lean propane/air mixtures over platinum have been investigated at pressures 1 bar  p  7 bar, fuel-to-air equivalence ratios 0.23  φ  0.43, and catalytic wall temperatures 723 K  T_w  1286 K. Experiments were performed in an optically accessible catalytic channel-flow reactor and involved 1-D Raman measurements of major gas-phase species concentrations across the reactor boundary layer for the assessment of catalytic fuel conversion and planar laser induced fluorescence (LIF) of the OH radical for the determination of homogeneous ignition. Numerical predictions were carried out with a 2-D elliptic CFD code that included a one-step catalytic reaction for the total oxidation of propane on Pt, an elementary C₃ gas-phase chemical reaction mechanism, and detailed transport. A global catalytic reaction step valid over the entire pressure–temperature-equivalence ratio parameter range has been established, which revealed a p^0.75 dependence of the catalytic reactivity on pressure. The aforementioned global catalytic step was further coupled to a detailed gas-phase reaction mechanism in order to simulate homogeneous ignition characteristics in the channel-flow reactor. The predictions reproduced within 10% the measured homogeneous ignition distances at pressures p  5 bar, while at p = 7 bar the simulations overpredicted the measurements by 19%. The overall model performance suggests that the employed hetero-/homogeneous chemical reaction schemes are suitable for the design of propane-fueled catalytic microreactors.     

Electron drag in intermediate magnetic fields with low electron density

Electron drag between two two-dimensional electron systems has been measured in intermediate magnetic fields (/τ<ω_ck_BT) with a relatively low electron density. We explore, in this sample, the unusual increase of drag in intermediate magnetic fields which was well characterized by a nearly temperature independent B³ dependence. The anomalous behavior of electron drag observed in higher density samples is found to persist for low sample density.     

Surface morphology and composition of c-, a- and m-sapphire surfaces in O2 and H2 environments

This paper reports that monitoring the composition of the c(0 0 0 1), a(11–20) and m(10–10) sapphire surfaces is essential for a proper interpretation of the surface morphologies obtained after annealing at 1253 and 1473 K in ArH₂ or ArO₂ atmospheres. Our experimental investigations, which have used Auger electron spectroscopy (AES) and atomic force microscopy (AFM) on the surfaces of 99.99% pure sapphire wafers, have led to the following original conclusions: (i) Calcium segregates at the c-surface of sapphire both under ArO₂ and ArH₂. (ii) Potassium adsorption enhances the kinetics of step-bunching on the c-surface under ArO₂. (iii) The step edges on the a-surface may develop a comb-like morphology made of parallel strips along the [10–10] direction. (iv) At 1253 K, clean m-surfaces may be stable. (v) Under ArH₂, alumina surface diffusion is much slower than under ArO₂ for all surface orientations, the surface concentration of impurities is low, and the Al–O ratio of the AES signals at the surface is significantly larger.     

Epitaxial growth of 4H–SiC{0001} and reduction of deep levels

Homoepitaxial growth of 4H–SiC{0001} by hot-wall chemical vapor deposition (CVD) and characterization of deep levels in both n- and p-type epilayers have been investigated. On 4 off-axis 4H–SiC(0001), formation of macrosteps can be reduced by decreasing the C/Si ratio during CVD, though the growth condition leads to the increase in nitrogen incorporation. The 4H–SiC() face is promising, owing to its very smooth surface morphology even on 4 off-axis substrates and to its superior quality of the oxide/SiC interface. Deep level transient spectroscopy measurements in the wide temperature range from 100 K to 820 K on both n- and p-type 4H–SiC epilayers have revealed almost all the deep levels located in the whole energy range of the bandgap. Thermal annealing at 1350–1700 C of epilayers has resulted in reduction of deep level concentrations by one order of magnitude.     

Enhancement of surface morphology and optical properties of nanocolumnar ZnO films

Nanocolumnar ZnO films were prepared by electrodeposition (ED) on a glass substrate covered with a conductive layer of thin oxide doped with fluorine (FTO). After deposition the samples were annealed in oxidizing or reducing atmosphere, at temperatures between 100 to 500 C, in order to follow the evolution of optical properties and morphology. The optical properties of these films were studied by means of photoluminescence spectroscopy (PL) and the morphology by scanning electron microscopy (SEM). Films annealed at 300 C exhibit a higher ultraviolet emission peak, originating from exciton transitions. A green band related to deep-level emission centered at 500 nm, shows a drastic increase at 500 C. These results are independent of the annealing atmosphere. An increase of coalescence is also observed after annealing at 500 C. These results are explained taking into account the contribution of different point defects.     

UV-Raman scattering study of lattice recovery by thermal annealing of Eu -implanted GaN layers

Lattice recovery of Eu-implanted GaN has been studied by means of Raman scattering under UV excitation. GaN epilayers implanted at 300 keV with doses ranging from 2×10¹⁴ to 4×10¹⁵ cm⁻² and subsequently annealed at 1000 C for 20 min show an increasing degree of disorder as the implantation dose increases. Higher temperature annealings up to 1300 C were also investigated in samples having an AlN capping layer. Disorder related modes, observed in samples annealed at 1000 C, disappear at higher annealing temperatures, indicating an incomplete lattice recovery at 1000 C. The Raman scattering spectra show resonant A₁(LO) multiphonon scattering up to sixth order, whose relative intensities depend on the implantation dose. The intensity ratios between multiphonon peaks observed for the highest implantation doses suggest a spread of the resonance, which could be related to a heterogeneous strain distribution, also indicative of incomplete lattice recovery.     

Antiferromagnetic Mn50Fe50 wire with large magnetostriction

This work presents a study on the relation between the fiber texture and the magnetostrictive performance in an antiferromagnetic Mn₅₀Fe₅₀ alloy wire, which was prepared through the combining process of hot rolling and cold drawing. The face-centered cubic (fcc) crystal structure can be retained during the plastic deformation process. Mixed fiber textures consisting of both 1 1 0 and 1 0 0 components were formed along the drawing direction (DD) in the wire. A large magnetostriction of 750 ppm was obtained along DD under 1.2 T, which can be ascribed to the single γ phase and the formation of preferred crystal orientation.     

Effects of linear birefringence inside sensing head upon bulk glass current sensors’ sensitivity

The effects of the linear birefringence inside a bulk glass current sensing element and the incident polarizing angle upon the performance of a bulk glass optical current sensor are derived and analyzed theoretically. The investigation results show that the linear birefringence will modify the scale factor of the system with a sample function; it can also affect the extent of the influence of the incident polarizing angle, at the same time. When the incident polarizing angle has some special values such as 0, 45, or 90, its effect on the system will be zero. These results might provide some useful reference to the researchers and designers of bulk glass optical current sensors.     

Electric and magnetic losses and gains in determining the sign of refractive index

Within the framework of classic electromagnetic theories, we have studied the sign of refractive index of optical medias with the emphases on the roles of the electric and magnetic losses and gains. Starting from the Maxwell equations for an isotropic and homogeneous media, we have derived the general form of the complex refractive index and its relation with the complex electric permittivity and magnetic permeability, i.e. , in which the intrinsic electric and magnetic losses and gains are included as the imaginary parts of the complex permittivity and permeability, respectively, as  = _r + i_i and μ = μ_r + iμ_i. The electric and magnetic losses are present in all passive materials, which correspond, respectively, to the positive imaginary permittivity and permeability _i > 0 and μ_i > 0. The electric and magnetic gains are present in materials where external pumping sources enable the light to be amplified instead of attenuated, which correspond, respectively, to the negative imaginary permittivity and permeability _i < 0 and μ_i < 0. We have analyzed and determined uniquely the sign of the refractive index, for all possible combinations of the four parameters _r, μ_r, _i, and μ_i, in light of the relativistic causality. A causal solution requires that the wave impedance be positive Re{Z} > 0. We illustrate the results for all cases in tables of the sign of refractive index. One of the most important messages from the sign tables is that, apart from the well-known case where simultaneously  < 0 and μ < 0, there are other possibilities for the refractive index to be negative n < 0, for example, for _r < 0, μ_r > 0, _i > 0, and μ_i > 0, the refractive index is negative n < 0 provided μ_i/_i > μ_r/_r.     

Far-field properties and beam quality of vectorial Hermite–Laguerre–Gaussian beams beyond the paraxial approximation

The far-field properties and beam quality of vectorial nonparaxial Hermite–Laguerre–Gaussian (HLG) beams are studied in detail, where, instead of the second-order-moments-based M² factor, the extended power in the bucket (PIB) and βparameter are used to characterize the beam quality in the far field and the intensity in the formulae is replaced by the z component of the time-averaged Poynting vector S_z. It is found that the S_z PIB and βparameter of vectorial nonparaxial HLG beams depend on the mode indices n, m, αparameter and waist-width-to-wavelength ratio w₀/λ and the PIB and βparameter are additionally dependent on the bucket's size taken.     

Al Schottky contact on p-GaSe

A new Schottky diode, Al/p-GaSe, was presented in this study. It shows an effective barrier height of 0.96 eV with an ideality factor of 1.24 over five decades and a reverse leakage current density of 4.12×10⁻⁷ A/cm² at −2 V after rapid thermal annealing at 400 C for 30 s. The generation–recombination effect of the Schottky diode was decreased as the annealing temperature was increased. The formation of Al_1.33Se₂ was observed by X-ray diffraction analysis after the diode was annealed at 400 C for 30 s. Owing to the grains’ growth, the surface morphology of the 400 C-annealed diode was rougher than that of the unannealed diode, which was observed both by the AFM and the SEM analysis.