HP-Ca2Si5N8--a new high-pressure nitridosilicate: synthesis, structure, luminescence, and DFT calculations

HP-Ca(2)Si(5)N(8) was obtained by means of high-pressure high-temperature synthesis utilizing the multianvil technique (6 to 12 GPa, 900 to 1200 degrees C) starting from the ambient-pressure phase Ca(2)Si(5)N(8). HP-Ca(2)Si(5)N(8) crystallizes in the orthorhombic crystal system (Pbca (no. 61), a=1058.4(2), b=965.2(2), c=1366.3(3) pm, V=1395.7(7)x10(6) pm(3), Z=8, R1=0.1191). The HP-Ca(2)Si(5)N(8) structure is built up by a three-dimensional, highly condensed nitridosilicate framework with N([2]) as well as N([3]) bridging. Corrugated layers of corner-sharing SiN(4) tetrahedra are interconnected by further SiN(4) units. The Ca(2+) ions are situated between these layers with coordination numbers 6+1 and 7+1, respectively. HP-Ca(2)Si(5)N(8) as well as hypothetical orthorhombic o-Ca(2)Si(5)N(8) (isostructural to the ambient-pressure modifications of Sr(2)Si(5)N(8) and Ba(2)Si(5)N(8)) were studied as high-pressure phases of Ca(2)Si(5)N(8) up to 100 GPa by using density functional calculations. The transition pressure into HP-Ca(2)Si(5)N(8) was calculated to 1.7 GPa, whereas o-Ca(2)Si(5)N(8) will not be adopted as a high-pressure phase. Two different decomposition pathways of Ca(2)Si(5)N(8) (into Ca(3)N(2) and Si(3)N(4) or into CaSiN(2) and Si(3)N(4)) and their pressure dependence were examined. It was found that a pressure-induced decomposition of Ca(2)Si(5)N(8) into CaSiN(2) and Si(3)N(4) is preferred and that Ca(2)Si(5)N(8) is no longer thermodynamically stable under pressures exceeding 15 GPa. Luminescence investigations (excitation at 365 nm) of HP-Ca(2)Si(5)N(8):Eu(2+) reveal a broadband emission peaking at 627 nm (FWHM=97 nm), similar to the ambient-pressure phase Ca(2)Si(5)N(8):Eu(2+).     

Theoretical Study on the Structure and Stability of Si5X （X = Li, Be, B, C, N, O, F, Na, Mg, Al, Si, P, S, Cl） Clusters

1 INTRODUCTION In the later 60s of last century, silicon substituted for germanium to present as mainstream in semicon- ductor. The semi-conductive devices made by silicon have many advantages, for example, refractory pro- perty, high radioresistance, simple and stable process- ing technic, high machinability and low cost. So it was widely used to manufacture large power appara- tuses, for instance, digit and linear integrated circuit, large scale integrated circuit (LSI), etc. Thus, th…     

Substituent effects of methoxy,methyl, and vinyl groups on glow discharge polymerization

Glow discharge polymerizations in systems of trimethoxymethylsilane, trimethoxyvinylsilane, tetramethylsilane, and trimethylvinylsilane were compared by elemental analysis, infrared (IR) spectroscopy, and ESCA to reveal effects of methoxyl, methyl, and vinyl substituents. The substituent effects appeared in the chemical composition of the polymers formed especially at low W/FM values. Methoxy groups depressed the C/Si and H/Si ratios of the polymers rather than the methyl groups, whereas vinyl groups increased the C/Si and H/Si ratios. On IR spectra the polymers formed from silanes that contained methoxy groups showed fewer absorptions due to Si? H groups and strong absorptions due to Si? OH groups. The polymers from those that contained no methoxy groups showed absorptions of Si? H groups and no absorptions of Si? OH groups. These differences in the environment of Si atoms of polymeric chains also appeared in the Si_2p core level spectra, thus indicating the different fragmentation patterns of the starting materials in glow discharge.     

Silicon monohydride clusters Si(n)H (n = 4-10) and their anions: structures, thermochemistry, and electron affinities

The molecular structures, electron affinities, and dissociation energies of the Si(n)H/Si(n)H- (n = 4-10) species have been examined via five hybrid and pure density functional theory (DFT) methods. The basis set used in this work is of double-zeta plus polarization quality with additional diffuse s- and p-type functions, denoted DZP++. The geometries are fully optimized with each DFT method independently. The three different types of neutral-anion energy separations presented in this work are the adiabatic electron affinity (EA(ad)), the vertical electron affinity (EA(vert)), and the vertical detachment energy (VDE). The first Si-H dissociation energies, D(e)(Si(n)H --> Si(n) + H) for neutral Si(n)H and D(e)(Si(n)H- --> Si(n)- + H) for anionic Si(n)H- species, have also been reported. The structures of the ground states of these clusters are traditional H-Si single-bond forms. The ground-state geometries of Si5H, Si6H, Si8H, and Si9H predicted by the DFT methods are different from previous calculations, such as those obtained by Car-Parrinello molecular dynamics and nonorthogonal tight-binding molecular dynamics schemes. The most reliable EA(ad) values obtained at the B3LYP level of theory are 2.59 (Si4H), 2.84 (Si5H), 2.86 (Si6H), 3.19 (Si7H), 3.14 (Si8H), 3.36 (Si9H), and 3.56 (Si10H) eV. The first dissociation energies (Si(n)H --> Si(n) + H) predicted by all of these methods are 2.20-2.29 (Si4H), 2.30-2.83 (Si5H), 2.12-2.41 (Si6H), 1.75-2.03 (Si7H), 2.41-2.72 (Si8H), 1.86-2.11 (Si9H), and 1.92-2.27 (Si10H) eV. For the negatively charged ion clusters (Si(n)H- --> Si(n)- + H), the dissociation energies predicted are 2.56-2.69 (Si4H-), 2.80-3.01 (Si5H-), 2.86-3.06 (Si6H-), 2.80-3.03 (Si7H-), 2.69-2.92 (Si8H-), 2.92-3.18 (Si9H-), and 2.89-3.25 (Si10H-) eV.     

Direct covalent grafting of conjugated molecules onto Si, GaAs, and Pd surfaces from aryldiazonium salts

Using aryldiazonium salts that are air-stable and easily synthesized, we describe here a one-step, room-temperature route to direct covalent bonds between pi-conjugated organic molecules on three material surfaces: Si, GaAs, and Pd. The Si can be in the form of single crystal Si including heavily doped p-type Si, intrinsic Si, heavily doped n-type Si, on Si(111) and Si(100), and on n-type polycrystalline Si. The formation of the aryl-metal or aryl-semiconductor bond attachments was confirmed by corroborating evidence from ellipsometry, reflectance FTIR, XPS, cyclic voltammetry, and AFM analyses of the surface-grafted monolayers. A data-encompassing explanation for the mechanism suggests a diazonium activation by reduction at the open circuit potential, with aryl radical secondary products bonding to the surface. The synthetic details are included for preparing the surface-grafted monolayers and the precursor diazonium salts. This spontaneous diazonium activation reaction offers an attractive route to highly passivating, robust monolayers and multilayers on many surfaces that allow for strong bonds between carbon and surface atoms with molecular species that are near perpendicular to the surface.     

IR-spektroskopische Untersuchungen an Halogenmethyl-, Benzyl- und α-Halogenbenzyl-Substituierten Alkoxysilanen,Phenoxysilanen und Disiloxanen

I.R.-spectroscopic Investigation on Halogenomethyl-, Benzyl-, and α-Halogenobenzyl-substituted Alkoxysilanes, Phenoxysilanes, and Disiloxanes Frequencies of Si? O-characteristic vibrations and the relative basicity of oxygen have been measured for Si? O compounds of the type X(CH₃)₂Si? OY (X = halogenomethyl, benzyl, α-halogenobenzyl; Y = alkyl, phenyl, Si(CH₃)₂X). With exception of the less Si? O-characteristic C? O? (Si)-stretching vibration of alkoxysilanes the observed data show a significant dependence from the inductive effect of substituents at Si. There are no informations on conjugative interactions between Si and β-standing halogeno or phenyl groups.     

Planar tetra-, penta-, hexa-, hepta-, and octacoordinate silicons: a universal structural pattern

A universal structural pattern has been presented at density function theory level to incorporate planar tetra-, penta-, hexa-, hepta-, and octacoordinate silicons in C2v B(n)E2Si series (E = CH, BH, or Si; n = 2-5) and D8h B8Si. The equivalence in valence electron counts and one-to-one correspondence of the delocalized pi and sigma valence orbitals with small boron clusters strongly support the optimized structures containing planar coordinate silicons. Planar B(n)E2Si series are predicted to be aromatic in nature, and the vertical detachment energies of their anions are presented to facilitate future photoelectron experiments. This structural pattern can be applied to form other planar coordinate nonmetals including Ge, P, As, Al, and Ga and needs to be confirmed in experiments to open a new branch of chemistry on planar coordinate main group elements.     

Synthesis, structure, and properties of BaAl2Si2

Single crystals of BaAl2Si2 were grown from an Al molten flux and characterized using single-crystal X-ray diffraction at 10 and 90 K and neutron diffraction at room temperature. BaAl2Si2 crystallizes with the alpha-BaCu2S2 structure type (Pnma), is isostructural with alpha-BaAl2Ge2, and is an open 3D framework compound, where Al and Si form a covalent cagelike network with Ba2+ cations residing in the cages. BaAl2Si2 has a unit cell of a=10.070(3) A, b=4.234(1) A, and c=10.866(3) A, as determined by room-temperature single-crystal neutron diffraction (R1=0.0533, wR2=0.1034). The structure as determined by single-crystal neutron and X-ray diffraction (10 and 90 K) indicates that BaAl2Si2 (Pnma) is strictly isostructural to other (alpha)-BaCu2S2-type structures, requiring site specificity for Al and Si. Unlike BaAl2Ge2, no evidence for an alpha to beta (BaZn2P2-type, I4/mmm) phase transition was observed. This compound shows metallic electronic resistivity and Pauli paramagnetic behavior.     

Hybrids of organic molecules and flat, oxide-free silicon: high-density monolayers, electronic properties, and functionalization

Since the first report of Si-C bound organic monolayers on oxide-free Si almost two decades ago, a substantial amount of research has focused on studying the fundamental mechanical and electronic properties of these Si/molecule surfaces and interfaces. This feature article covers three closely related topics, including recent advances in achieving high-density organic monolayers (i.e., atomic coverage >55%) on oxide-free Si(111) substrates, an overview of progress in the fundamental understanding of the energetics and electronic properties of hybrid Si/molecule systems, and a brief summary of recent examples of subsequent functionalization on these high-density monolayers, which can significantly expand the range of applicability. Taken together, these topics provide an overview of the present status of this active area of research.     

Geometry, chemical bonding, and electronic spectra of Si(n) and Si(n)-glycine (n = 3-5) complexes

Structures and spectra are calculated for Si(n) and Si(n)-Gly (n = 3-5) complexes. Relative stability differences of Gly conformers are magnified by interactions with the Si(n) cluster, so that one conformer of Si(n)-Gly is stabilized. Significant charge transfer occurs from the amino group in Gly to a Si atom in the cluster. Interactions with Gly are predicted to shift the excitation energies of Si(n) significantly to the blue to 2.1-2.7 eV, although they are still lower than in a Si cluster passivated by hydrogen.     

Stable highly doped C60-mSim heterofullerenes: a first principles study of C40Si20, C36Si24, and C30Si30

Geometry optimization within the framework of density functional theory provides clear evidence of stable fullerene-like cage structures for C(40)Si(20), C(36)Si(24), and C(30)Si(30). In the case of C(40)Si(20), an extensive isomer search shows that the most stable arrangements are those in which the Si atoms and the C atoms form two distinct homogeneous subnetworks. Any other configuration corresponding to spatially separated sets of Si atoms leads to a decrease of the binding energy. Due to charge transfer from Si to C atoms, opposite charges are found in neighboring Si and C sites. Structural stability is ensured via the predominant occurrence of 3-fold bonding for both species.     

A synthetic breakthrough into an unanticipated stability regime: a series of isolable complexes in which C6, C8, C10, C12, C16, C20, C24, and C28 polyynediyl chains span two platinum atoms

The reaction of trans-[PtCl(p-tol){P(p-tol)3}2] (PtCl) and H(C[triple chemical bond]C)2H (cat. CuI, HNEt2) gives PtC4H (82 %), which can be cross-coupled with excess HC[triple chemical bond]CSiEt3 (acetone, O2, CuCl/TMEDA; Hay conditions) to yield PtC6Si (77 %). The addition of nBu4N+F- in wet acetone gives PtC6H (84 %), and further addition of ClSiMe3 (F- scavenger) and excess HC[triple chemical bond]CSiEt3 (Hay conditions) yields PtC(8)Si (23 %). Similar cross-coupling reactions of PtCxH (generated in situ for x>6) and excess H(C[triple chemical bond]C)2SiEt3 give a) x=4, PtC8Si (29 %), PtC12Si (30 %), and PtC16Si (1 %); b) x=6, PtC10Si (59 %) and PtC14Si (7 %); c) x=8, PtC12Si (42 %); and d) x=10, PtC14Si (20 %). Hay homocoupling reactions of PtC4H, PtC6H, PtC8H, and PtC10H give PtC8Pt, PtC12Pt, PtC16Pt, and PtC20Pt (88-70 %), but PtC12H decomposes too rapidly. However, when PtC12Si and PtC14Si are subjected to Hay conditions, protodesilylation occurs in the presence of the oxidizing agent and PtC24Pt (36 %) and PtC28Pt (51 %) are isolated. Reactions of PtC6H and PtC10H with PtCl (CuI, HNEt2) give PtC6Pt (56 %) and PtC10Pt (84 %). The effect of the chain lengths in PtCxPt upon thermal stabilities (>200 degrees C for x< or =20), IR nu(C[triple chemical bond]C) patterns (progressively more bands), colors (yellow to orange to deep red), UV/Vis spectra (progressively red-shifted and more intense bands with epsilon>400,000 M(-1) cm(-1)), redox properties (progressively more difficult oxidations), and NMR spectra (many monotonic trends) are analyzed, including implications for the sp carbon allotrope carbyne. Whereas all other dodecaynes and tetradecaynes rapidly decompose at room temperature, PtC24Pt and PtC28Pt remain stable at >140 degrees C. Crystal structures of PtCxSi (x=6, 8, 10) and PtCxPt (x=6, 8, 10, 12) have been determined.     

Optimization, standardization, and testing of a new NMR method for the determination of zeolite host-organic guest crystal structures

An optimized and automated protocol for determining the location of guest sorbate molecules in highly siliceous zeolites from (29)Si INADEQUATE and (1)H/(29)Si cross polarization (CP) magic-angle spinning (MAS) NMR experiments is described. With the peaks in the (29)Si MAS NMR spectrum assigned to the unique Si sites in the zeolite framework by a 2D (29)Si INADEQUATE experiment, the location of the sorbate molecule is found by systematically searching for sorbate locations for which the measured rates of (1)H/(29)Si cross polarization of the different Si sites correlate linearly with (1)H/(29)Si second moments calculated from H-Si distances. Due to the (1)H/(29)Si cross polarization being in the "slow CP regime" for many zeolite-sorbate complexes, it is proposed that the CP rate constants are best measured by (1)H/(29)Si cross polarization drain experiments, if possible, to avoid complications that may arise from fast (1)H and (29)Si T(1)rho relaxations. An algorithm for determining the sorbate molecule location is described in detail. A number of ways to effectively summarize and display the large number of solutions which typically result from a prediction of the structure from the CP MAS NMR data are presented, including estimates of the errors involved in the structure determinations. As a working example throughout this paper, the structure of the low loaded p-dichlorobenzene/ZSM-5 complex is determined under different conditions from solid-state (1)H/(29)Si CP MAS NMR data, and the solutions are shown to be in excellent agreement with the known single-crystal X-ray diffraction structure. This structure determination approach is shown to be quite insensitive to the use of relative rate constants rather than absolute values, to the detailed structure of the zeolite framework, and relatively insensitive to temperature and motions.     

Synthesis, structure, and high-temperature thermoelectric properties of boron-doped Ba8Al14Si31 clathrate I phases

Single crystals of boron-doped Ba8Al14Si31 clathrate I phase were prepared using Al flux growth. The structure and elemental composition of the samples were characterized by single-crystal and powder X-ray diffraction; elemental analysis; and multinuclear (27)Al, (11)B, and (29)Si solid-state NMR. The samples' compositions of Ba8B0.17Al14Si31, Ba8B0.19Al15Si31, and Ba8B0.32Al14Si31 were consistent with the framework-deficient clathrate I structure Ba8Al(x)Si(42-3/4x)cube(4-1/4x) (x = 14, cube = lattice defect). Solid-state NMR provides further evidence for boron doped into the framework structure. Temperature-dependent resistivity indicates metallic behavior, and the negative Seebeck coefficient indicates that transport processes are dominated by electrons. Thermal conductivity is low, but not significantly lower than that observed in the undoped Ba8Al14Si31 prepared in the same manner.     

Measurement of long-range 29Si,13C spin-spin coupling at natural abundance

Schemes for sensitive measurements of spin-spin coupling constants between rare nuclei with low magnetogyric ratios are considered and two combinations of INEPT with gradient versions of (X,Y)HMQC and (X,Y)COSY are suggested as particularly suitable for 29Si,13C couplings. It is demonstrated that the (H,Si)INEPT-(Si,C,Si)gHMQC combination (with 29Si detection) produces excellent results even though it is theoretically inferior to the (H,Si)INEPT-(Si,C)gCOSY combination (with 13C detection).     

Ligand-free deltahedral clusters of silicon in solution: synthesis, structure, and electrochemistry of Si9(2-)

Deltahedral nine-atom clusters of silicon, Si(9)(2-), were synthesized by mild oxidation of a liquid ammonia solution of K(12)Si(17) with Ph(3)GeCl in the presence of 18-crown-6 (1,4,7,10,13,16-hexaoxacyclooctadecane) or 2,2,2-crypt (4,7,13,16,21,24-hexaoxa-1,10-diazabicyclo[8.8.8]hexacosane). The clusters were structurally characterized in [K(18-crown-6)](2)Si(9).C(5)H(5)N (yellow; orthorhombic, Pnma; a = 14.013(1), b = 18.108 (1), c = 18.320 (1) A; Z = 4) crystallized from a pyridine solution of the product of the aforementioned reaction in liquid ammonia. Si(9)(2-) is the first unequivocally characterized nine-atom cluster of group 14 with a charge of 2-. In addition to pyridine, the product from the reaction in liquid ammonia is also soluble in DMF, and the Si(9)(2-) clusters were characterized by mass spectrometry in such a solution. The more reduced clusters Si(9)(3-) have also been crystallized from pyridine solution. Cyclic voltammetry in both pyridine and DMF solutions clearly shows the Si(9)(2-)/Si(9)(3-) redox couple as one-electron reversible process. The structural similarities and differences between Si(9)(3-) and Si(9)(2-) are discussed herein.     

N‐Heterocyclic Carbene (NHC)‐Stabilized Silanechalcogenones: NHC→Si(R2)E (E=O,S, Se,Te)

A series of N‐heterocyclic carbene‐stabilized silanechalcogenones 2 a , b (Si?O), 3 a , b (Si?S), 4 a , b (Si?Se), and 5 a , b (Si?Te) are described. The silanone complexes 2 a , b were prepared by facile oxygenation of the carbene–silylene adducts 1 a , b with N₂O, whereas their heavier congeners were synthesized by gentle chalcogenation of 1 a , b with equimolar amounts of elemental sulfur, selenium, and tellurium, respectively. These novel compounds have been isolated in a crystalline form in high yields and have been fully characterized by a variety of techniques including IR spectroscopy, ESIMS, and multinuclear NMR spectroscopy. The structures of 2 b , 3 a , 4 a , 4 b , and 5 b have been confirmed by single‐crystal X‐ray crystallography. Due to the NHC→Si donor–acceptor electronic interaction, the Si?E (E=O, S, Se, Te) moieties within these compounds are well stabilized and thus the compounds possess several ylide‐like resonance structures. Nevertheless, these species also exhibit considerable Si?E double‐bond character, presumably through a nonclassical Si?E π‐bonding interaction between the chalcogen lone‐pair electrons and two antibonding Si? N σ* orbitals, as evidenced by their high stretching vibration modes and the shortening of the Si–E distances (between 5.4 and 6.3 %) compared with the corresponding Si? E single‐bond lengths.     

Structure, energetics, and bonding of amorphous Au-Si alloys

First principles periodic calculations based on gradient-corrected density functional theory have been performed to examine the structure, energetics, and bonding of amorphous Au-Si alloys with varying Au:Si composition ratios. Our results predict that the Au-Si alloy forms the most stable structure when the Si content is around 40-50 at. %, with an energy gain of about 0.15 eV/atom. In addition, the volume change per atom in the alloy exhibits a distinctive nonlinear trend, with the minimum value around 60 at. % Si. The occurrence of the minimum in the Au-Si mixing energy and volume is attributed to strong hybridization of the Au 5d-Si 3p states. We also present variations in the radial distribution function and atomic coordination number as a function of Au:Si composition ratio, with discussion of the nature of local packing and chemical bonding in the Au-Si alloy system.     

Silicon Nanocrystals and Silicon‐Polymer Hybrids: Synthesis,Surface Engineering,and Applications

Silicon nanocrystals (Si‐NCs) are emerging as an attractive class of quantum dots owing to the natural abundance of silicon in the Earth's crust, their low toxicity compared to many Group II–VI and III–V based quantum dots, compatibility with the existing semiconductor industry infrastructure, and their unique optoelectronic properties. Despite these favorable qualities, Si‐NCs have not received the same attention as Group II–VI and III–V quantum dots, because of their lower emission quantum yields, difficulties associated with synthesizing monodisperse particles, and oxidative instability. Recent advancements indicate the surface chemistry of Si‐NCs plays a key role in determining many of their properties. This Review summarizes new reports related to engineering Si‐NC surfaces, synthesis of Si‐NC/polymer hybrids, and their applications in sensing, diodes, catalysis, and batteries.     

IR-spektroskopische Untersuchungen an Aroxy-fluor-, Aroxy-hydrid- und Fluor-hydrid-silanen

IR-spectroscopic Investigations of Aroxy-fluoro-, Aroxy-hydride-, and Fluoro-hydride-silanes. Characteristic IR-bands of Si? H-, Si? F- and Si? 0-aryl groups of some aroxy-fluoro-, aroxy-hydride- and fluoro-hydride-silanes are investigated. The relative band positions are explained by the influence of inductive and (p? d),-effects of the sub- stituents on the bond properties of the concerning groups. The results for the Si? 0-aryl- group are completed by additional investigations about H? bonding with phenol.