Structural and electron-transfer characteristics of carbon-tethered porphyrin monolayers on Si(100)

Structural and electron-transfer characteristics are reported for two classes of zinc porphyrin monolayers attached to Si(100) surfaces via Si-C bonds. One class, designated ZnP(CH(2))(n)- (n = 2-4), contains an alkyl linker appended to the meso-position of the porphyrin, with the nonlinking substituents being p-tolyl groups. The other, designated ZnPPh(CH(2))(n)- (n = 0-3), contains a phenyl or phenylalkyl linker appended to the meso-position of the porphyrin, with the nonlinking substituents being mesityl groups. Both classes of zinc porphyrin monolayers on Si(100) were examined using Fourier transform infrared spectroscopy and various electrochemical methods. The studies reveal the following: (1) The structural and electron-transfer characteristics of the ZnP(CH(2))(n)- and ZnPPh(CH(2))(n)- monolayers are generally similar to those of monolayers formed from porphyrins with analogous linkers, but anchored with an O, a S, or a Se atom. (2) The ZnP(CH(2))(n)-, ZnPPh-, and ZnPPhCH(2)- monolayers exhibit lower saturation coverages and have their porphyrin ring more tilted with respect to the surface normal than the ZnPPh(CH(2))(2)- and ZnPPh(CH(2))(3)- monolayers. (3) The electron-transfer rates for both the ZnP(CH(2))(n)- and ZnPPh(CH(2))(n)- classes of monolayers monotonically decrease as the length of the linker increases. (4) For all the ZnP(CH(2))(n)- and ZnPPh(CH(2))(n)- monolayers, both electron-transfer rates and charge-dissipation rates decrease monotonically as the surface coverage increases. Collectively, the studies reported herein provide a detailed picture of how the linker type influences the structural and electron-transfer characteristics of these general classes of monolayers.     

Structural and electron-transfer characteristics of O-, S-, and Se-tethered porphyrin monolayers on Si(100)

Monolayers of two classes of Zn porphyrins have been prepared and examined on Si(100). These molecules, designated as ZnPBzX- and ZnPCH2X-, contain either a benzyl (-Bz-) or a methylene (-CH2-) unit terminated with a Group VI atom (X = O, S, Se) appended to a meso-position of the porphyrin, with the nonlinking meso-substituents consisting of either mesityl (-Bz- class) or p-tolyl and phenyl (-CH2- class) units. The two series of ZnPBzX- and ZnPCH2X- monolayers on Si(100) were examined using a variety of techniques, including X-ray photoelectron spectroscopy, Fourier transform infrared spectroscopy, and various electrochemical methods. The studies reveal the following characteristics of the ZnPBzX- and ZnPCH2X- monolayers. (1) Surface binding can be readily achieved to Si(100) with both relatively short (-Bz-) and very short (-CH2-) tethers regardless of the nature of the Group VI anchoring atom (O, S, Se). (2) The longer -Bz- tether affords monolayers with the porphyrin ring in a somewhat more upright orientation with respect to the surface than the shorter -CH2- tether. The more upright adsorption geometry of the porphyrins bearing the former type of linker leads to a higher packing density and more homogeneous redox thermodynamics. (3) The kinetics of electron transfer does not depend on the type of Group VI atom used for anchoring to the Si(100) surface. On the other hand, the type of linker does affect the electron-transfer rates, with the monolayers bearing the -CH2- linker exhibiting systematically faster rates than those bearing the -Bz- linker. Collectively, the studies reported herein provide a detailed picture of how the anchor atom and the linker type influence the structural and electron-transfer characteristics of these general classes of monolayers.     

Demonstration of molecular assembly on Si (100) for CMOS-compatible molecule-based electronic devices

In this work, we establish the potential of a UV-promoted direct attachment of alkanes with alcohol and thiol linkers to the silicon (100) surfaces for use in molecular electronic devices with increased potential for integration with existing CMOS technologies. Characterization of the self-assembled monolayers via Fourier transform infrared spectroscopy, spectroscopic ellipsometry, and X-ray photoemission spectroscopy shows that the films assembled on the Si (100) are comparable in quality, aliphatic monolayer coverage, and extent of substrate oxidation to those assembled on the more extensively studied Si (111) crystal face. Simple Si (100)-based electronic devices fabricated with the monolayers exhibited molecule-dependent electrical characteristics. These data highlight the effectiveness of the assembly on Si (100), the ability to fabricate enclosed Si (100)-based molecular devices, and the potential for the future integration of these devices with more conventional technologies.     

Molecular monolayer-mediated control over semiconductor surfaces: evidence for molecular depolarization of silane monolayers on Si/SiO(x)

We show that, for molecules with particularly strong dipoles, their organization into a monomolecular layer can lead to depolarization, something that limits the range over which the substrate's work function can be changed. It appears that, with molecules, depolarization is achieved by changes in orientation and conformation, rather than by charge transfer to the substrate as is common for atomic layers.     

Thermal behavior of perfluoroalkylsiloxane monolayers on the oxidized Si(100) surface

The thermal stability of perfluoralkylsiloxane monolayers in a vacuum is investigated via X-ray photoelectron spectroscopy (XPS) for temperatures up to 600 degrees C. 1H,1H,2H,2H,-perfluorodecyltrichlorosilane (FDTS) monolayers are deposited on oxidized Si(100) surfaces from the vapor phase with various degrees of surface coverage. Significant monolayer desorption is observed to occur at temperatures below 300 degrees C regardless of the initial monolayer coverage. The desorption mechanism follows first-order kinetics and is independent of the initial coverage. Removal of FDTS is found to occur by the loss of the entire molecular chain, as evidenced by the fact that the CF(3)/CF(2) peak area ratios remain unaffected by the annealing process although CF(n)()/Si peak ratio declines with annealing. This is in sharp contrast to the behavior observed for octadecyltrichlorosilane monolayer for which elevated temperature leads to C-C bond breakage and successive shortening of the alkyl chain. It is also shown that the binding energy and the shape of the F 1s line are good indicators of the degree of disorder in the chain, as well as a measure of the interaction of the chain with the silicon surface.     

Comparison of electron-transfer rates for metal- versus ring-centered redox processes of porphyrins in monolayers on Au(111)

The standard electron-transfer rate constants ( k ( 0 )) are measured for redox processes of Fe versus Zn porphyrins in monolayers on Au(111); the former undergoes a metal-centered redox process (conversion between Fe (III) and Fe (II) oxidation states) whereas the latter undergoes a ring-centered redox process (conversion between the neutral porphyrin and the pi-cation radical). Each porphyrin contains three meso-mesityl groups and a benzyl thiol for surface attachment. Under identical solvent (propylene carbonate)/electrolyte (1.0 M Bu 4NCl) conditions, the Zn (II) center has a coordinated Cl (-) ion when the porphyrin is in either the neutral or oxidized state. In the case of the Fe porphyrin, two species are observed a low-potential form ( E l (0) approximately -0.6 V) wherein the metal center has a coordinated Cl (-) ion when it is in either the Fe (II) or Fe (III) state and a high-potential form ( E h (0) approximately +0.2 V) wherein the metal center undergoes ligand exchange upon conversion from the Fe (III) to Fe (II) states. The k ( 0 ) values observed for all of the porphyrins depend on surface concentration, with higher concentrations resulting in slower rates, consistent with previous studies on porphyrin monolayers. The k ( 0 ) values for the ring-centered redox process (Zn chelate) are 10-40 times larger than those for the metal-centered process (Fe chelate); the k ( 0 ) values for the two forms of the Fe porphyrin differ by a factor of 2-4 (depending on surface concentration), the Cl (-) exchanging form generally exhibiting a faster rate. The faster rates for the ring- versus metal-centered redox process are attributed to the participating molecular orbitals and their proximity to the surface (given that the porphyrins are relatively upright on the surface): a pi molecular orbital that has significant electron density at the meso-carbon atoms (one of which is the site of attachment of the linker to the surface anchoring thiol) versus a d-orbital that is relatively well localized on the metal center.     

Functionalization of acetylene-terminated monolayers on Si(100) surfaces: a click chemistry approach

In this article, we report the functionalization of alkyne-terminated alkyl monolayers on Si(100) using "click" chemistry, specifically, the Cu(I)-catalyzed Huisgen 1,3-dipolar cycloaddition reaction of azides with surface-bound alkynes. Covalently immobilized, structurally well-defined acetylene-terminated organic monolayers were prepared from a commercially available terminal diyne species using a one-step hydrosilylation procedure. Subsequent derivatization of the alkyne-terminated monolayers in aqueous environments with representative azide species via a selective, reliable, robust cycloaddition process afforded disubstituted surface-bound [1,2,3]-triazole species. Neither activation procedures nor protection/deprotection steps were required, as is the case with more established grafting approaches for silicon surfaces. Detailed characterization using X-ray photoelectron spectroscopy and X-ray reflectometry demonstrated that the surface acetylenes had reacted in moderate to high yield to give surfaces exposing alkyl chains, oligoether anti-fouling moieties, and functionalized aromatic structures. These results demonstrate that click immobilization offers a versatile, experimentally simple, chemically unambiguous modular approach to producing modified silicon surfaces with organic functionality for applications as diverse as biosensors and molecular electronics.     

Metal-molecule interactions upon deposition of copper overlayers on reactively functionalized porphyrin monolayers on Si(100)

The interaction of evaporated Cu deposited on a series of porphyrins in monolayers covalently attached to Si(100) substrates was investigated using cyclic voltammetry and FTIR spectroscopy. Each porphyrin contains a triallyl tripod attached to the porphyrin via a p-phenylene unit. The tripod anchors the porphyrin to the Si(100) substrate via hydrosilylation of the allyl groups. Two of the porphyrins are Zn chelates that possess meso p-cyanophenyl substituentsone, ZnP-CND, contains a single group opposite (distal) to the tripodal surface anchor, whereas the other, ZnP-CNL, contains two groups orthogonal (lateral) to the surface anchor. A third Zn porphyrin, ZnP, containing nonreactive p-tolyl groups at all three nonanchoring meso positions, was examined for comparison. The fourth porphyrin, FbP-HD, is a metal-free species (free base) that contains nonreactive phenyl (distal) and p-tolyl groups (lateral) at the three nonanchoring meso positions. The fifth porphyrin, CuP-HD, is the Cu chelate of FbP-HD, and serves as a reference complex for evaluating the effects of Cu metal deposition onto FbP-HD. The studies indicate that all of the porphyrin monolayers are robust under the conditions of Cu deposition, experiencing no noticeable degradation. In addition, the Cu metal does not penetrate through the monolayer to form electrically conductive filaments. For the ZnP-CND monolayers, the deposited Cu quantitatively reacts/complexes with the distal cyano group. In contrast, for the ZnP-CNL monolayers no reaction/complexation of the lateral cyano groups is observed. For the FbP-HD monolayers, Cu deposition results in quantitative insertion of Cu into the free base porphyrin. Collectively, the studies demonstrate that porphyrin monolayers are amenable to direct deposition of Cu overlayers and that functionalization of the porphyrins can be used to mediate the attributes of the metal-molecule junction.     

Molecular modeling of alkyl monolayers on the Si(100)-2 x 1 surface

Molecular modeling was used to simulate various surfaces derived from the addition of 1-alkenes and 1-alkynes to Si=Si dimers on the Si(100)-2 x 1 surface. The primary aim was to better understand the interactions between adsorbates on the surface and distortions of the underlying silicon crystal due to functionalization. Random addition of ethylene and acetylene was used to determine how the addition of an adduct molecule affects subsequent additions for coverages up to one molecule per silicon dimer, that is, 100% coverage. Randomization subdues the effect that the relative positions of the adsorbates have on the enthalpy of the system. For ethylene and acetylene, the enthalpy of reaction changes less than 3 and 5 kcal/mol, respectively, from the first reacted species up to 100% coverage. As a result, a (near-)complete coverage is predicted, which is in line with experimental data. When 1-alkenes and 1-alkynes add by [2 + 2] addition, the hydrocarbon chains interact differently depending on the direction they project from the surface. These effects were investigated for four-carbon chains: 1-butene and 1-butyne. As expected, the chains that would otherwise intersect bend to avoid each other, raising the enthalpy of the system. For alkyl chains longer than four carbons, the chains are able to reorient themselves in a favorable manner, thus, resulting in a steady reduction in reaction enthalpy of about 2 kcal/mol for each additional methylene unit.     

Grazing incidence X-ray absorption spectra of (Si/W) 100/Si multilayer

Tungsten (W) M_III X-ray absorption spectra of a periodic multilayer, (Si/W)₁₀₀/Si, were measured with the change of X-ray grazing angle using sample current method. Under not total reflection condition, the absorbance changed little except at W M_III absorption edge. While under the total reflection condition, the absorbance increased with the increase of the X-ray energy and the increment changed from low to high at the W M_III absorption edge. This result reflected the variation of the X-ray evanescent wavelength caused by the absorption effect of W.     

Electronic excited states of Si(100) and organic molecules adsorbed on Si(100)

The electronically excited states of the Si(100) surface and acetylene, benzene, and 9,10-phenanthrenequinone adsorbed on Si(100) are studied with time-dependent density functional theory. The computational cost of these calculations can be reduced through truncation of the single excitation space. This allows larger cluster models of the surface in conjunction with large adsorbates to be studied. On clean Si(100), the low-lying excitations correspond to transitions between the pi orbitals of the silicon-silicon dimers. These excitations are predicted to occur in the range 0.4-2 eV. When organic molecules are adsorbed on the surface, surface --> molecule, molecule --> surface, and electronic excitations localized within the adsorbate are also observed at higher energies. For acetylene and benzene, the remaining pipi* excitations are found to lie at lower energies than in the corresponding gas-phase species. Even though the aromaticity of 9,10-phenanthrenequinone is retained, significant shifts in the pipi* excitations of the aromatic rings are predicted. This is in part due to structural changes that occur upon adsorption.     

Self-assembled monolayers of dipolar nonlinear optical nickel(II) molecules on the Si(100) surface with nanoscale uniformity

The synthesis and structure of a dipolar nonlinear optical bis(salicylaldiminato)Ni(II)-derivatized Schiff base complex chemisorbed on H-terminated Si(100) surfaces is reported. The existence of a monolayer of the derivatized complex chemisorbed on the Si(100) surface is unambiguously confirmed by high-resolution core-level XPS and AFM/SNOM analyses. The comparison between the optical SNOM images highlights the contribution of the monolayer to the local reflectivity of the sample. Angle-resolved XPS data indicate the presence of chlorine head atoms on the monolayer surface. Altogether, XPS and AFM/SNOM data suggest the formation of a nanoscale uniform, homogeneous, complete, ordered monolayer self-assembled on the Si(100) surface.     

Dehydrative cyclocondensation reactions on hydrogen-terminated Si(100) and Si(111): an ex situ tool for the modification of semiconductor surfaces

Dehydrative cyclocondensation processes for semiconductor surface modification can be generally suggested on the basis of well-known condensation schemes; however, in practice this approach for organic functionalization of semiconductors has never been investigated. Here we report the modification of hydrogen-terminated silicon surfaces by cyclocondensation. The cyclocondensation reactions of nitrobenzene with hydrogen-terminated Si(100) and Si(111) surfaces are investigated and paralleled with selected cycloaddition reactions of nitro- and nitrosobenzene with Si(100)-2x1. Infrared spectroscopy is used to confirm the reactions and verify an intact phenyl ring and C-N bond in the reaction products as well as the depletion of surface hydrogen. High resolution N 1s X-ray photoelectron spectroscopy (XPS) suggests that the major product for both cyclocondensation reactions investigated is a nitrosobenzene adduct that can only be formed following water elimination. Both IR and XPS are augmented by density functional theory (DFT) calculations that are also used to investigate the feasibility of several surface reaction pathways, which are insightful in understanding the relative distribution of products found experimentally. This novel surface modification approach will be generally applicable for semiconductor functionalization in a highly selective and easily controlled manner.     

Experimental and theoretical investigation on binary semiconductor clusters of B/Si and Al/Si

ASi (A = B and Al; n = 1–6) binary cluster anions were generated by laser ablation of samples composed of mixtures of Si and A (A = B and Al), and studied in the gas phase by tandem time‐of‐flight mass spectrometry. Some abundant ions are present in the mass spectrum, indicating that the clusters with these ions have stable structures. The structures of ASi clusters were investigated theoretically by the density functional theory (DFT) method and the energetically lowest‐lying structures were obtained. The binary clusters BSi and AlSi, with the same number of n, share different geometric structures except for ASi with n = 1 and 6, which have the same geometric structures in the ground state. For all the anionic clusters ASi, the lower spin state is lower in energy than the higher spin state in their optimized structures except for the linear ASi^? anions, for which the triplet state is lower in energy than the singlet. Calculations of the bonding energy (BE), energy gain (Δ) and HOMO‐LUMO energy gaps confirm that the cluster ASi has a very stable structure, which agrees well with the experimental results. Copyright © 2007 John Wiley & Sons, Ltd.     

Effect of molecular binding to a semiconductor on metal/molecule/semiconductor junction behavior

Diodes made by (indirectly) evaporating Au on a monolayer of molecules that are adsorbed chemically onto GaAs, via either disulfide or dicarboxylate groups, show roughly linear but opposite dependence of their effective barrier height on the dipole moment of the molecules. We explain this by Au-molecule (electrical) interactions not only with the exposed end groups of the molecule but also with its binding groups. We arrive at this conclusion by characterizing the interface by in situ UPS-XPS, ex situ XPS, TOF-SIMS, and Kelvin probe measurements, by scanning microscopy of the surfaces, and by current-voltage measurements of the devices. While there is a very limited interaction of Au with the dicarboxylic binding groups, there is a much stronger interaction with the disulfide groups. We suggest that these very different interactions lead to different (growth) morphologies of the evaporated gold layer, resulting in opposite effects of the molecular dipole on the junction barrier height.     

Growth kinetics and morphology of self-assembled monolayers formed by contact printing 7-octenyltrichlorosilane and octadecyltrichlorosilane on Si(100) wafers

The growth kinetics and morphologies of self-assembled monolayers deposited by contact printing 7-octenyltrichlorosilane (OCT) and octadecyltrichlorosilane (OTS) on Si(100) were studied by ellipsometry and atomic force microscopy. We found that, for both OCT and OTS, full monolayers could be obtained at room temperature after printing times of 120-180 s; the printing-based monolayer assembly processes follow apparent Langmuir adsorption kinetics, with the measured film growth rates increasing both with the ambient humidity and with concentration of the ink used to load the stamp. At a dew point of 10 degrees C and an ink concentration (in toluene) of 50 mM, the observed film growth rate constant is 0.05 s(-)(1). When the printing was carried out at a lower ambient humidity (dew points of 1-3 degrees C), the measured rates of assembly were approximately a factor of 2 slower. Increasing the deposition temperature from 25 to 45 degrees C under these conditions increased the film growth rate only slightly. The morphology of the films depends on the identity of the ink. Uniform, high-coverage films could be obtained readily from the eight-carbon chain length adsorbate OCT, provided that the stamp was not overloaded with the ink; for high concentrations outside of the optimal range, the surface presented significant numbers of adsorbed particles ascribed, in part, to siloxane polymers formed by hydrolysis of the ink on the stamp before printing. In marked contrast, for the 18-carbon adsorbate OTS, the printed films always consisted of a mixture of a uniform monolayer plus adsorbed polysiloxane particles. The different film morphologies seen for OCT and OTS are proposed to result from the different transfer efficiencies of the organotrichlorosilane relative to polysiloxane hydrolysis products formed during the printing process. These transfer efficiencies exhibit sensitivities related to the permeation of the poly(dimethylsiloxane) (PDMS) stamp by the silane reagents. Short-chain inks such as OCT evidently permeate the PDMS stamp more deeply than longer-chain inks such as OTS. This difference, and the different diffusion rates of ink vs oligomeric silane hydrolysis products, determines the film morphology obtained by contact printing. The mass transfer dynamics of the process thus yield surface layers derived from varying quantities of siloxane oligomers, which subsequently transfer to the substrate along with unhydrolyzed silane adsorbate during the printing step. The structural evolution of the contact-printed films so obtained is strikingly different from that of SAMs prepared by immersion.     

Cluster properties of peptides on (100) semiconductor surfaces

Peptide adhesion on semiconductor surfaces is quantitatively investigated by atomic force microscopy. The selected peptides are shown to cluster at the surface, with the larger, higher, and softer clusters appearing on the surfaces with lower peptide adhesion. Average cluster diameters vary from 40 nm on GaAs (100) to 300 nm on Si (100). Direct adhesion of the peptides to the surface competes with forming molecular aggregates that offer an overall reduced surface contact.     

Molecular simulation of alkyl monolayers on the Si(111)surface

The structure of twelve-carbon monolayers on the H-terminated Si(111) surface is investigated by molecular simulation method. The best substitution percent on Si(111) surface obtained via molecular mechanics calculation is equal to 50%, and the (8×8) simulated cell can be used to depict the structure of alkyl monolayer on Si surface. After two-dimensional cell containing alkyl chains and four-layer Si(111) crystal at the substitution 50% is constructed, the densely packed and well-ordered monolayer on Si(111) surface can be shown through energy minimization in the suitable-size simulation cell. These simulation results are in good agreement with the experiments. These conclusions show that molecular simulation can provide otherwise inaccessible mesoscopic information at the molecular level, and can be considered as an adjunct to experiments.     

Molecular simulation of alkyl monolayers on the Si(lll) surface

The structure of twelve-carbon monolayers on the H-terminated Si(111) surface is investigated by molecular simulation method. The best substitution percent on Si(111) surface obtained via molecular mechanics calculation is equal to 50%, and the (8 ε 8) simulated cell can be used to depict the structure of alkyl monolayer on Si surface. After two-dimensional cell containing alkyl chains and four-layer Si(111) crystal at the substitution 50% is constructed, the densely packed and well-ordered monolayer on Si(111) surface can be shown through energy minimization in the suitable-size simulation cell. These simulation results are in good agreement with the experiments. These conclusions show that molecular simulation can provide otherwise inaccessible mesoscopic information at the molecular level, and can be considered as an adjunct to experiments.