Synthesis, structure, and electronic structure of K2CuSbS3

The new compound K₂CuSbS₃ has been synthesized by the reaction of K₂S, Cu, Sb, and S at 823 K. The compound crystallizes in the Na₂CuSbS₃ structure type with four formula units in space group P2₁/c of the monoclinic system in a cell at 153 K of a=6.2712 (6) Å, b=17.947 (2) Å, c=7.4901 (8) Å, β=120.573 (1)°, and V=725.81 (12) Å³. The structure contains two-dimensional layers separated by K atoms. Each layer is built from CuS₃ and SbS₃ units. Each Cu atom is pyramidally coordinated to three S atoms with the Cu atom about 0.4 Å above the plane of the S atoms. Each Sb atom is similarly coordinated to three S atoms but is about 1.1 Å above its S₃ plane. First-principles calculations indicate an indirect band gap of 1.9 eV. These calculations also indicate that there is a bonding interaction between the Cu and Sb atoms. An optical absorption measurement performed with light perpendicular to the (0 1 0) crystal face of a red block-shaped crystal of K₂CuSbS₃ indicates an experimental indirect band gap of 2.2 eV.     

Syntheses, structures, optical properties, and theoretical calculations of Cs2Bi2ZnS5, Cs2Bi2CdS5, and Cs2Bi2MnS5

Three new compounds, Cs₂Bi₂ZnS₅, Cs₂Bi₂CdS₅, and Cs₂Bi₂MnS₅, have been synthesized from the respective elements and a reactive flux Cs₂S₃ at 973 K. The compounds are isostructural and crystallize in a new structure type in space group Pnma of the orthorhombic system with four formula units in cells of dimensions at 153 K of a=15.763(3), b=4.0965(9), c=18.197(4) Å, V=1175.0(4) Å³ for Cs₂Bi₂ZnS₅; a=15.817(2), b=4.1782(6), c=18.473(3)  Å, V=1220.8(3)  ų for Cs₂Bi₂CdS₅; and a=15.830(2), b=4.1515(5), c=18.372(2) Å, V=1207.4(2) Å³ for Cs₂Bi₂MnS₅. The structure is composed of two-dimensional _∞²[Bi₂MS₅²⁻] (M=Zn, Cd, Mn) layers that stack perpendicular to the [100] axis and are separated by Cs⁺ cations. The layers consist of edge-sharing _∞¹[Bi₂S₆⁶⁻] and _∞¹[MS₃⁴⁻] chains built from BiS₆ octahedral and MS₄ tetrahedral units. Two crystallographically unique Cs atoms are coordinated to S atoms in octahedral and monocapped trigonal prismatic environments. The structure of Cs₂Bi₂MS₅, is related to that of Na₂ZrCu₂S₄ and those of the AMM′Q₃ materials (A=alkali metal, M=rare-earth or Group 4 element, M′= Group 11 or 12 element, Q=chalcogen). First-principles theoretical calculations indicate that Cs₂Bi₂ZnS₅ and Cs₂Bi₂CdS₅ are semiconductors with indirect band gaps of 1.85 and 1.75 eV, respectively. The experimental band gap for Cs₂Bi₂CdS₅ is ≈1.7 eV, as derived from its optical absorption spectrum.     

Synthesis, crystal structure, and electronic structure of RbVSe2

RbVSe₂ has been synthesized at 773 K through the reaction of V and Se with a Rb₂Se₃ reactive flux. The compound crystallizes in the orthorhombic space group D_2h²⁴-Fddd with 16 formula units in a cell of dimensions , , and at . The structure possesses infinite one-dimensional chains of edge-sharing VSe₄ tetrahedra separated from the Rb⁺ ions. These chains distort slightly to chains. The V-V distance within these chains is 2.8362(4) Å. First-principles total energy calculations indicate that a non-magnetic configuration for the V³⁺ cations is the most stable.     

Preparation, structures, and band gaps of RbInS2 and RbInSe2

The two compounds RbInS₂ and RbInSe₂ have been synthesized at 773 K by means of the reactive flux method. These isostructural compounds crystallize in space group C2/c of the monoclinic system with 16 formula units in a cell at 153 K of dimensions , , , and β=100.244(1)° for RbInS₂, and , , , and β=100.16(2)° for RbInSe₂. The In atoms are four-coordinated. The structure consists of two-dimensional (Q=S, Se) layers perpendicular to [001] separated from the Rb⁺ cations. Adamantane-like In₄Q₁₀ units are connected by common corners to form the layers. Band structure calculations indicate that these compounds are direct band-gap semiconductors with the smallest band gap at the Γ point. The calculated band gaps are 2.8 eV for RbInS₂ and 2.0 eV for RbInSe₂, values that are consistent with the colors of the compounds.     

Syntheses, crystal and electronic structures of three new potassium cadmium(II)/zinc(II) tellurides: K2Cd2Te3, K6CdTe4 and K2ZnTe2

Three new ternary potassium(I) zinc(II) or cadmium(II) tellurides, namely, K₂Cd₂Te₃, K₆CdTe₄ and K₂ZnTe₂, were synthesized by solid-state reactions of the mixture of pure elements of K, Cd (or Zn) and Te in Nb tubes at high temperature. K₂Cd₂Te₃ belongs to a new structure type and its structure contains a novel two-dimensional [Cd₂Te₃]²⁻ layers perpendicular to the b-axis. K(5) cation is located at the center of five member rings of the 2D [Cd₂Te₃]²⁻ layer, whereas other K⁺ cations occupy the interlayer space. K₆CdTe₄ with a K₆HgS₄ type structure features a “zero-dimensional” structure composed of isolated CdTe₄ tetrahedra separated by the K⁺ ions. K₂ZnTe₂ in the K₂ZnO₂ structural type displays 1D [ZnTe₂]²⁻ anionic chains of edge sharing [ZnTe₄] tetrahedra separated by the potassium(I) ions. K₂Cd₂Te₃, K₆CdTe₄ and K₂ZnTe₂ revealed a band gap of 1.93, 2.51 and 3.0 eV, respectively.     

Synthesis, structure, band gap, and electronic structure of CsAgSb4S7

The compound CsAgSb₄S₇ has been synthesized by the reaction of the elements in a Cs₂S₃ flux at 773 K. The compound crystallizes in a new structure type with eight formula units in space group C2/c of the monoclinic system in a cell at 153 K of dimensions , , , β=97.650(1)°, and . The structure contains two-dimensional layers separated by Cs atoms. Each layer is built from edge-sharing one-dimensional and chains. Each Ag atom is tetrahedrally coordinated to four S atoms. Each Sb³⁺ center is pyramidally coordinated to three S atoms to form an SbS₃ group. CsAgSb₄S₇ is insulating with an optical band gap of 2.04 eV. Extended Hückel calculations indicate that the band gap in CsAgSb₄S₇ is dominated by the Sb 5s and S 3p states above and below the Fermi level.     

Synthesis, crystal structure and optical properties of an indium phosphate K3In3P4O16

An alkali-metal indium phosphate crystal, K₃In₃P₄O₁₆, has been synthesized by a high-temperature solution reaction and exhibits a new structure in the family of the alkali-metal indium phosphates system. Single-crystal X-ray diffraction analysis shows the structure to be monoclinic with space group P2₁/n, and the following cell parameters: a=9.7003(18), b=9.8065(18), c=15.855(3) Å, β=90.346(3)°, V=1508.2(5) Å³, Z=4, R=0.0254. It possesses three-dimensional anionic frameworks with tunnels occupied by K⁺ cations running along the a-axis. The emission and absorption spectra of the compound have been investigated. Additionally, the calculations of energy band structure, density of states, dielectric constants and refractive indexes have been performed with the density functional theory method. Also, the two-photon absorption spectrum is simulated by two-band model. The obtained results tend to support the experimental data.     

Synthesis, band structure, and optical properties of Ba2ZnV2O8

A novel compound Ba₂ZnV₂O₈ has been synthesized in high temperature solution reaction and its crystal structure has been characterized by means of single crystal X-ray diffraction analysis. It crystallizes in monoclinic system and belongs to space group P2₁/c with a=7.9050(16), b=16.149(3), , β=90.49(3). It builds up from 1-D branchy chains of [ZnV₂O₈⁴⁻]_∞, and the Ba²⁺ cations are located in the space among these chains. The IR spectrum, ultraviolet-visible diffuse reflection integral spectrum and fluorescent spectra of this compound have been investigated. The calculated results of energy band structure by the density functional theory method show that the solid-state compound of Ba₂ZnV₂O₈ is an insulator with direct band gap of 3.48 eV. The calculated total and partial density of states indicate that the top valence bands are contributions from the mixings of O-2p, V-3d, and Zn-3d states and low conduction bands mostly originate from unoccupied antibonding states between the V-3d and O-2p states. The V-O bonds are mostly covalence characters and Zn-O bonds are mostly ionic interactions, and the ionic interaction strength is stronger between the Ba-O than between the Zn-O. The refractive index of n_x, n_y, and n_z is estimated to be 1.7453, 1.7469, and 1.7126, respectively, at wavelength of 1060 nm for Ba₂ZnV₂O₈ crystal.     

KBiMS4 (M=Si, Ge): Synthesis, structure, and electronic structure

Two new bismuth sulfides KBiSiS₄ and KBiGeS₄ have been synthesized by means of the reactive flux method. They adopt the RbBiSiS₄ structure type and crystallize in space group P2₁/c of the monoclinic system. The structure consists of (M=Si, Ge) layers separated by bicapped trigonal-prismatically coordinated K atoms. The M atom is tetrahedrally coordinated to four S atoms and the Bi atom is coordinated to a distorted monocapped trigonal prism of seven S atoms. The optical band gap of 2.25(2) eV for KBiSiS₄ was deduced from the diffuse reflectance spectrum. From a band structure calculation, the optical absorption for KBiSiS₄ originates from the layer. The Si 3p orbitals, Bi 6p orbitals, and S 3p orbitals are highly hybridized near the Fermi level. The orbitals of K have no contributions on both the upper of valence band and the bottom of conduction band.     

Synthesis, structure, and magnetic and electronic properties of Cs2Hg2USe5

The compound Cs₂Hg₂USe₅ was obtained from the solid-state reaction of U, HgSe, Cs₂Se₃, Se, and CsI at 1123 K. This material crystallizes in a new structure type in space group P2/n of the monoclinic system with a cell of dimensions a=10.276(6) Å, b=4.299(2) Å, c=15.432(9) Å, β=101.857(6) Å, and V=667.2(6) Å³. The structure contains layers separated by Cs atoms. Within the layers are distorted HgSe₄ tetrahedra and regular USe₆ octahedra. In the temperature range of 25-300 K Cs₂Hg₂USe₅ displays Curie-Weiss paramagnetism with μ_eff=3.71(2) μ_B. The compound exhibits semiconducting behavior in the [010] direction; the conductivity at 298 K is 3×10⁻³ S/cm. Formal oxidation states of Cs/Hg/U/Se may be assigned as +1/+2/+4/− 2, respectively.     

Single-crystal growth, crystal and electronic structure of NaCoO2

Single crystals of NaCoO₂ have been successfully synthesized for the first time by a flux method at 1323 K. A single-crystal X-ray diffraction study confirmed the trigonal space group and the lattice parameters , . The crystal structure has been refined to the conventional values R=1.9% and wR=2.1% for 309 independent observed reflections. The electron density distribution of NaCoO₂ has been studied by the maximum entropy method (MEM) using single-crystal X-ray diffraction data obtained at 298 K. From the results of the MEM analysis, the strong covalent bonding was clearly observed between Co and O atoms, while no bonding was observed around Na atoms. We also calculated the electron density of NaCoO₂ by first principles calculations. The electron density obtained experimentally is in good agreement with the theoretical one.     

Synthesis, crystal and electronic structure, and physical properties of the new lanthanum copper telluride La3Cu5Te7

The new lanthanum copper telluride La₃Cu_5−xTe₇ has been obtained by annealing the elements at 1073 K. Single-crystal X-ray diffraction studies revealed that the title compound crystallizes in a new structure type, space group Pnma (no. 62) with lattice dimensions of a=8.2326(3) Å, b=25.9466(9) Å, c=7.3402(3) Å, V=1567.9(1) Å³, Z=4 for La₃Cu_4.86(4)Te₇. The structure of La₃Cu_5−xTe₇ is remarkably complex. The Cu and Te atoms build up a three-dimensional covalent network. The coordination polyhedra include trigonal LaTe₆ prisms, capped trigonal LaTe₇ prisms, CuTe₄ tetrahedra, and CuTe₃ pyramids. All Cu sites exhibit deficiencies of various extents. Electrical property measurements on a sintered pellet of La₃Cu_4.86Te₇ indicate that it is a p-type semiconductor in accordance with the electronic structure calculations.     

Synthesis, crystal structure, and nonlinear optical properties of Bi2Cu5B4O14

Bi₂Cu₅B₄O₁₄ crystallizes in the noncentrosymmetric triclinic space group P1 (No. 1) with cell parameters a=10.1381(11) Å, b=9.3917(11) Å, c=3.4566(4) Å, α=105.570(2)°, β=92.275(2)°, γ=107.783(2)°, Z=1 and R₁=0.0401 and wR₂=0.0980. It is a layered structure that is built up from sheets of rectangular CuO₄ and trigonal BO₃ groups. The sheets are connected by infinite chains of edge shared BiO₆ polyhedra that intersect the bc plane at an angle slightly greater than 90°. The second-harmonic generation efficiency of Bi₂Cu₅B₄O₁₄, using 1064 nm radiation, is about one half times that of KH₂PO₄.     

Crystal structure, electronic structure and physical properties of the new low-valent thallium silicon telluride Tl6Si2Te6 in comparison to Tl6Ge2Te6

The title compounds were prepared from the elements in the stoichiometric ratio at 800 °C under exclusion of air. Tl₆Si₂Te₆ crystallizes in the space group P1¯, isostructural with Tl₆Ge₂Te₆, with , , , α=89.158(2)°, β=96.544(2)°, γ=100.685(2)°, (Z=2). Its structure is composed of dimeric [Si₂Te₆]⁶⁻ units with a Si-Si single bond, while the Tl atoms are irregularly coordinated by five to six Te atoms. Numerous weakly bonding Tl-Tl contacts exist. Both title compounds are black semiconductors with small band gaps, calculated to be 0.9 eV for Tl₆Si₂Te₆ and 0.5 eV for Tl₆Ge₂Te₆. The Seebeck coefficients are +65 μV K⁻¹ in case of Tl₆Si₂Te₆ and +150 μV K⁻¹ in case of Tl₆Ge₂Te₆ at 300 K, and the electrical conductivities are 5.5 and 3 Ω⁻¹ cm⁻¹, respectively.     

Syntheses, structures, and magnetic and optical properties of the compounds [Hg3Te2][UCl6] and [Hg4As2][UCl6]

Two new quaternary salts, [Hg₃Te₂][UCl₆] and [Hg₄As₂][UCl₆], have been synthesized and their structures determined by single-crystal X-ray diffraction analysis. [Hg₃Te₂][UCl₆] is the product of a reaction involving UCl₄, HgCl₂, and HgTe at 873 K. The compound crystallizes in space group P2₁/c of the monoclinic system. [Hg₄As₂][UCl₆] results from the reaction of U, Hg₂Cl₂, and As at 788 K. It crystallizes in space group Pbca of the orthorhombic system. [Hg₃Te₂][UCl₆] has a two-dimensional framework of layers, whereas [Hg₄As₂][UCl₆] has a three-dimensional framework of layers interconnected by Hg atoms linearly bonded to As atoms. Both framework structures contain discrete [UCl₆]²⁻ anions between the layers. [Hg₃Te₂][UCl₆] exhibits temperature-independent paramagnetism. The optical absorption spectra of these compounds display f-f transitions.     

Synthesis, crystal structure and optical properties of BiMgVO5

The new vanadate BiMgVO₅ has been prepared and its structure has been determined by single crystal X-ray diffraction: space group P2₁/n, , , , β=107.38(5)°, wR₂=0.0447, R=0.0255. The structure consists of [Mg₂O₁₀] and [Bi₂O₁₀] dimers sharing their corners with [VO₄] tetrahedra. The ranges of bond lengths are 2.129-2.814 Å for Bi-O; 2.035-2.167 Å for Mg-O and 1.684-1.745 Å for V-O. V-O bond lengths determined from Raman band wavenumbers are between 1.679 and 1.747 Å. An emission band overlapping the entire visible region with a maximum around 650 nm is observed.     

Solid-state synthesis, structural variants and transformation of three-dimensional sulfides, AGaSnS4 (A=Na, K, Rb, Cs, Tl) and Na1.263Ga1.263Sn0.737S4

New cubic-AGaSnS₄ (A=Na, K, Rb, Cs, Tl) and orthorhombic-NaGaSnS₄ compounds were synthesized by solid-state reactions and characterized by X-ray diffraction and diffuse reflectance spectroscopy. Single crystals of orthorhombic-Na_1.263Ga_1.263Sn_0.737S₄ were obtained in the crystal growth attempts of sodium compound. All six new compounds have orthorhombic AgGaGeS₄ and cubic BaGa₂S₄ structures, as determined from single crystal X-ray structures of Na_1.263Ga_1.263Sn_0.737S₄ and cubic-AGaSnS₄ (A=Na, K, Rb). Orthorhombic-NaGaSnS₄ and known layered-KGaSnS₄ undergo structural transformation to thermodynamically stable cubic form.     

Steric and electronic properties in bicyclic phosphines. Crystal and molecular structures of Se = Phoban-Q (Q = C2, C3Ph, Cy and Ph)

Reacting a series of the bicylic Phoban-Q (9-Q-9-phosphabicyclo[3.3.1]nonane and 9-Q-9-phosphabicyclo[4.2.1]nonane) derivatives (Q = alkyl, cyclo alkyl, aryl) with KSeCN results in the formation of the corresponding phosphine selenides. The first order phosphorus-selenium coupling constants, ¹J_P-Se, ranges from 682 to 689 Hz for the [3.3.1] isomers and from 703 to 717 Hz for the [4.2.1] isomers indicating the former to be significantly more electron rich. The crystal structures of Se = Phoban[3.3.1]-Q (Q = CH₂CH₃, C₃H₆Ph, Cy, and Ph) and Se = Phoban[4.2.1]-Q (Q = Cy and Ph) are reported and reveal PSe bond distances ranging from 2.1090(9) to 2.1245(7) Å. For Q = Cy and Ph the two isomers ([3.3.1] and [4.2.1]) co-crystallise in the same crystal enabling the determination of the molecular structures for both from the same data collection. The cone angles for all ligand derivatives were determined according to the Tolman model but by using the actual P-Se bond distances and were found to be virtually identical ranging from 165° to 175°. Changes in the Q substituent have a minor effect on the overall steric and electronic properties of the Phoban family of ligands and can be used to manipulate physical properties without changing the chemical properties significantly.     

Synthesis, structure and properties of Li2Rh3B2

Li₂Rh₃B₂ has been synthesized at 1000 °C from a stoichiometric mix of rhodium and boron and an excess of lithium. Li₂Rh₃B₂ crystallizes in the orthorhombic space group Pbam (no. 55, Z=2) with room temperature lattice constants a=5.7712(1) Å, b=9.4377(2) Å, c=2.8301(1) Å and cell volume 154.149(6) Å³. The structure was solved from single crystal X-ray diffraction yielding the final R indices (all data) R1=2.8% and wR2=4.7%. The structure is a distortion of the CeCo₃B₂ structure type, containing a network of Rh₆B trigonal prisms and short Li-Li contacts of 2.28(2) Å. Li₂Rh₃B₂ is a diamagnetic metal with a room temperature resistivity of 19 μΩ cm, as determined by magnetic susceptibility and single crystal transport measurements. The measured diamagnetism and electronic structure calculations show that Li₂Rh₃B₂ contains rhodium in a d¹⁰ configuration.     

Synthesis and structural characterization of two cobalt phosphites: 1-D (H3NC6H4NH3)Co(HPO3)2 and 2-D (NH4)2Co2(HPo3)3

Two new cobalt phosphites, (H₃NC₆H₄NH₃)Co(HPO₃)₂ (1) and (NH₄)₂Co₂(HPO₃)₃ (2), have been synthesized and characterized by single-crystal X-ray diffraction. All the cobalt atoms of 1 are in tetrahedral CoO₄ coordination. The structure of 1 comprises twisted square chains of four-rings, which contain alternating vertex-shared CoO₄ tetrahedra and HPO₃ groups. These chains are interlinked with trans-1,4-diaminocyclohexane cations by hydrogen bonds. The 2-D structure of 2 comprises anionic complex sheets with ammonium cations present between them. An anionic complex sheet contains three-deck phosphite units, which are interconnected by Co₂O₉ to form complex layers. Magnetic susceptibility measurements of 1 and 2 showed that they have a weak antiferromagnetic interaction.