Transverse conductivity in the sliding charge-density-wave state of NbSe3

The dynamical properties of longitudinal and transverse conduction of NbSe3 single crystals have been simultaneously studied when the current is applied along the b axis (chain direction). In the vicinity of the threshold electric field for charge-density-wave sliding, the transverse conduction sharply decreases. When a rf field is applied, voltage Shapiro steps for longitudinal transport are observed as usual but also current Shapiro steps in the transverse direction. The possible mechanisms of this effect are discussed.     

Inhibition of light tunneling in chirped and longitudinally modulated semi-infinite waveguide arrays

The inhibition of light tunneling in chirped and longitudinally modulated semi-infinite waveguide arrays where the refractive index is linearly modulated in the transverse direction and harmonically modulated along the light propagation direction is considered. We report on the effect of the refractive index transverse amplitude modulation rate, longitudinal modulation frequency and depth on tunneling inhibition in both linear and nonlinear regimes. We show that in the linear regime an optimal value for the transverse amplitude modulation rate of refractive index exists and can determine the optimal longitudinal modulation frequency or depth leading to a maximum of distance-averaged power fraction. In the nonlinear regime the tunneling inhibition dynamics is affected dramatically by the transverse amplitude modulation rate and the associated electric field amplitude of the input beam.     

Surface effect on free transverse vibrations and dynamic instability of current-carrying nanowires in the presence of a longitudinal magnetic field

Free transverse vibration and instability of current-carrying nanowires immersed in a longitudinal magnetic field are of concern. On the basis of the surface elasticity theory, a model is developed to investigate the problem. The analytical expressions of dynamic transverse displacements as well as natural frequencies of the magnetically affected nanowire for carrying electric current are obtained. The influences of the surface effect, initial tensile force within the nanowire, strength of the longitudinal magnetic field, and electric current on the natural frequencies as well as dynamic displacements are examined. The obtained results reveal that the transverse stiffness of the nanostructure is enhanced by the surface effect and the initial tensile force, while electric current or longitudinal magnetic field reduces the nanowire's stiffness. The condition which leads to the dynamic instability of the nanostructure is obtained. Further, the roles of the influential parameters on its stability are inclusively discussed.     

场板抑制GaN高电子迁移率晶体管电流崩塌的机理研究

通过实验和数值器件仿真研究了钝化GaN高电子迁移率晶体管(HEMTs)、栅场板GaN HEMTs和栅源双层场板GaN HEMTs电流崩塌现象的物理机理,建立了电流崩塌强度与帽层中载流子浓度、陷阱电离率和电场的内在联系.研究结果表明,场板可以有效调制帽层中横向和纵向电场的强度分布,并可有效调制纵向电场的方向,减弱栅极附近电场强度,增加场板下方电场强度,这会减弱栅极附近自由电子的横向运动,增强场板下方自由电子的纵向运动,进而可以有效调制帽层中自由电子浓度的分布,提高陷阱的电离率,减小器件的电流崩塌. 关键词： 电流崩塌 钝化器件 场板器件 陷阱电离率     

Band gap tuning of defective silicon carbide nanotubes under external electric field: Density functional theory

We have theoretically investigated the effect of applying longitudinal and transverse electric field on silicon carbide nanotubes with different orientations of Stone Wales defects. We found that each type of Stone Wales defects maintained different formation energy. We have also successfully proved that the orientation of Stone Wales defects in silicon carbide nanotubes response quite differently upon applying external electric field, whereas, two important and interesting phenomena were observed. First, the semiconductor-metal phase transition occurred in silicon carbide nanotubes as well as the three types of Stone Wales defects. However, clear band gap variations were observed in all silicon carbide nanotubes under study. Second, the band gap variations in pristine silicon carbide nanotubes and nanotubes with different orientations of Stone Wales defects have the same trend, even though all silicon carbide nanotubes have clear band gap values under different strengths of the applied external electric field. However, band gap tuning under longitudinal electric field is less significant compared to band gap tuning under the transverse electric field.     

Electrostatic ion-cyclotron wave experiments in the WVU Qmachine

The influence of transverse, localized, DC electric fields (TLEs) on the current-driven electrostatic ion-cyclotron (CDEIC) instability is being investigated in a Q machine. A small (diameter ~10 ion gyroradii) segmented disk electrode is being used to excite the mode in a narrow electron-current channel along which exists a radial electric field between regions that magnetically map to the different circular segments (separated by a radial gap of ~3 ion gyroradii). Experiments aimed at demonstrating a TLE dependence in the threshold current for mode excitation are described. A comparison of observed and predicted mode frequencies over a range of magnetic field strengths is presented for the benchmark case of no applied transverse electric field. When the electric field is present, ion-cyclotron fluctuations are observed for cases in which the current is below the CDEIC instability threshold     

Oscillations of a three-component assembly with or without magnetic field

The plasma is taken to be composed of singly ionized molecules, free electrons and neutral molecules, each of the component being described by the hydromagnetic equations, modified to take into account the displacement current, existence of free charge in the medium, and the modified current equation without involving the scalar conductivity. The basic equations are linearized and only small amplitude waves are considered. In the absence of any external magnetic field, the transverse and longitudinal modes of oscillation separate out. In the transverse part a coupled plasma oscillation occurs which could be propagated only above a certain critical frequency and in the longitudinal part one extraordinary mode of propagation occurs having a forbidden range of frequencies. When there is an external applied magnetic field, ordinary and extraordinary waves are propagated along the direction of the magnetic field, whereas only ordinary waves are propagated transverse to the magnetic field. The critical frequencies above which these waves are propagated are evaluated and, the possible explanation of this medium like behaviour could be the implicit assumption of conductivity being not a scalar.     

A modified analytical model of the alkali-metal atomic magnetometer employing longitudinal carrier field

Alkali-metal atomic magnetometers employing longitudinal carrier magnetic field have ultrahigh sensitivity to measure transverse magnetic fields and have been applied in a variety of precise-measurement science and technologies. In practice, the magnetometer response is not rigorously proportional to the measured transverse magnetic fields and the existing fundamental analytical model of this magnetometer is effective only when the amplitudes of the measured fields are very small. In this paper, we present a modified analytical model to characterize the practical performance of the magnetometer more definitely. We find out how the longitudinal magnetization of the alkali metal atoms vary with larger transverse fields. The linear-response capacity of the magnetometer is determined by these factors: the amplitude and frequency of the longitudinal carrier field, longitudinal and transverse spin relaxation time of the alkali spins and rotation frequency of the transverse fields. We give a detailed and rigorous theoretical derivation by using the perturbation-iteration method and simulation experiments are conducted to verify the validity and correctness of the proposed modified model. This model can be helpful for measuring larger fields more accurately and configuring a desirable magnetometer with proper linear range.     

Valley Hall effect and Nernst effect in strain engineered graphene

We theoretically predict the existence of tunneling valley Hall effect and Nernst effect in the normal/strain/normal graphene junctions, where a strained graphene is sandwiched by two normal graphene electrodes. By applying an electric bias a pure transverse valley Hall current with longitudinal charge current is generated. If the system is driven by a temperature bias, a valley Nernst effect is observed, where a pure transverse valley current without charge current propagates. Furthermore, the transverse valley current can be modulated by the Fermi energy and crystallographic orientation. When the magnetic field is further considered, we obtain a fully valley-polarized current. It is expected these features may be helpful in the design of the controllable valleytronic devices.     

Energetic barrier reduction at the carbyne film interface

An abnormal injection current density through SiO₂ has been observed recently for both signs of charge carriers in experiments with an oriented carbyne film grown on a SiO₂ layer. The absence of a surface leakage current and the insulating property of SiO₂ were experimentally proved. The temperature dependence of the current through SiO₂ showed low activation energy and confirmed the model of thermally activated injection. A strong influence of the electric field applied transverse to the carbon chains on the current through SiO₂ was observed. A model of energetic barrier reduction at the carbyne interface based on the hypothesis of transverse inter-chain hopping in the electric field was proposed. It was shown that a transverse electric field can be induced in a carbyne film as in one-dimensional media. The first organic light emitting device with a carbyne-based effective injector was fabricated.     

Spontaneous electromagnetic emission from a strongly localized plasma flow

Laboratory observations of electromagnetic ion-cyclotron waves generated by a localized transverse dc electric field are reported. Experiments indicate that these waves result from a strong E×B flow inhomogeneity in a mildly collisional plasma with subcritical magnetic field-aligned current. The wave amplitude scales with the magnitude of the applied radial dc electric field. The electromagnetic signatures become stronger with increasing plasma β, and the radial extent of the power is larger than that of the electrostatic counterpart. Near-Earth space weather implications of the results are discussed.     

金属纳米球-纳米圆盘结构中表面等离激元共振模式的电磁场增强研究

表面等离激元自诞生以来已有一百多年的历史,并逐渐形成了一门新的学科——表面等离激元光子学.位于金属纳米结构中的局域表面等离激元可产生非常显著的近表面电场增强,并成功应用于诸多研究领域当中,而对局域表面等离激元与外界入射光中磁场的相互作用的研究则相对较少.该研究在前期已有的研究基础之上模拟计算了金属纳米球-纳米圆盘结构间...     

Transverse conductivity behavior at threshold electric field for CDW sliding in NbSe3

We have measured the dynamical properties which occur in the transverse direction to the conducting chains in NbSe₃ single-crystals, when the CDW slides along the chains. A sharp decrease in transverse conductivity takes place above an electric field less than the longitudinal threshold one for CDW sliding; that may result from induced phase shifts between CDW chains. Under the joint application of dc and rf driving fields voltage Shapiro steps for longitudinal transport are observed as usual but also pronounced current Shapiro steps in transverse direction. The possible mechanisms of this effect as well as a tentative new view on the origin of the narrow band noise in CDW compounds are discussed.     

P, T violating magneto-electro-optics

We study linear and bilinear magneto-electro-optical effects due to the propagation of light in centro-symmetric media in the presence of P, T violating interactions and external transverse and longitudinal electric and/or magnetic fields. We show that new magneto-electric optical effects appear. In particular, we show the existence of a Jones birefringence proportional to the square of the transverse field amplitude. All these effects are an unambiguous signature of the P, T violation, and a search for such new phenomena could also provide novel limits on electric dipole moment (EDM) of matter.     

Enhanced electron trapping by a static longitudinal magnetic field in laser wakefield acceleration

An externally applied longitudinal magnetic field was found to enhance the particle trapping in the laser wakefield acceleration. When a static magnetic field of a few tens of tesla is applied in parallel with the propagation direction of a driving laser pulse, it is shown from two-dimensional particle-in-cell simulations that total charge of the trapped beam and its maximum energy increase. The analysis of electron trajectories strongly suggests that the enhanced trapping originates from the suppression of the transverse motion by the magnetic field. The enhanced trapping by the magnetic field was observed consistently for various values of the plasma density, the amplitude of the laser pulse and pulse spot size.     

Hot-Electron Magneto-Transport in InSb

The balance equations are used to investigate the hot electron magneto-transport in narrowgap semiconductor InSb at 77 K in crossed weak magnetic field and electric field. In the case of vanishing transverse velocity, the drift mobility and the Hall mobility are calculated and it is shown that the Hall factor in InSb at 77K is less than 1 and decreases with electric field. In the case of vanishing transverse electric field, the longitudinal velocity and the transverse velocity are calculated as a function of the magnetic field and the electric field. The effect of the magnetic field on the longitudinal velocity is different from that on the transverse velocity.     

Full electrical control of the electron spin relaxation in GaAs quantum wells

The electron spin dynamics in (111)-oriented GaAs/AlGaAs quantum wells is studied by time-resolved photoluminescence spectroscopy. By applying an external electric field of 50 kV/cm a two-order of magnitude increase of the spin relaxation time can be observed reaching values larger than 30 ns; this is a consequence of the electric field tuning of the spin-orbit conduction band splitting which can almost vanish when the Rashba term compensates exactly the Dresselhaus one. The measurements under a transverse magnetic field demonstrate that the electron spin relaxation time for the three space directions can be tuned simultaneously with the applied electric field.     

An integral approach to considering the evolution of a microwave streamer

We present a model of a microwave streamer based on analytical relations that allows its evolution to be described both during its elongation along the external electric field and after its stop. The equations for the electric field amplitude at the streamer center, the equations that describe the dynamics of the longitudinal and transverse sizes, and the equations of plasma chemical kinetics are self-consistently solved in terms of this model. Comparison with numerical 2D simulations of the electrostatic stage in air is made. We derive simple analytical relations that allow the power released in a plasma channel to be estimated on the fly. Almost the entire energy contribution is shown to be made after the termination of the streamer elongation.     

Nonlinear dynamics of breathing current filaments inn-GaAs andp-Ge

A novel model is presented for spatio-temporal pattern formation in semiconductors. It leads to self-generated nonlinear current oscillations due to “breathing” current filaments in the regime of impurity impact ionization. The four qualitatively different regimes which have been observed in Ge with increasing current are consistently explained as: a stationary nonconducting state; bulkdominated oscillations; breathing filaments; stable filaments. The physical origin of the breathing oscillations is impact ionization coupled with transverse diffusion and longitudinal dielectric relaxation. A method is developed to derive simple nonlinear dynamic equations for the filament radius and the position of the peak transverse electric field by a nonlinear mode expansion.     

Spontaneous transverse response and amplified switching in superconductors with honeycomb pinning arrays

Using numerical simulations, we show that a novel spontaneous transverse response can appear when a longitudinal drive is applied to type-II superconductors with honeycomb pinning arrays in a magnetic field near certain filling fractions. This response is generated by dynamical symmetry breaking that occurs at fields away from commensurability. We find a coherent strongly amplified transverse switching effect when an additional transverse ac drive is applied. The transverse ac drive can also be used to control switching in the longitudinal velocity response. We discuss how these effects could be used to create new types of devices such as current effect transistors.