重离子辐照玉米种子M1代诱变效应研究

用重离子^7Li和^12C以及^60Co的γ射线分别辐照玉米种子胚，研究重离子束辐照玉米种子M1代的生物学效应．结果表明:^60Co的丫射线使种子的发芽势和发芽率降低，重离子^7Li和^12C对发芽势和发芽率的抑制作用不明显；重离子辐照后，单株之间光合速率差异增大；M1代植株在雄性育性、叶片颜色及株高等方面发生了多种变化，并产生了一株双胚苗．应用随机多态性DNA分析技术，发现双胚苗的大、小苗之间及其与亲本自交系478在随机多态性DNA指纹上存在的差异，从分子水平上初步证实了双胚苗为自交系478的变异类型．In order to study M_(1) biological effects of heavy ion irradiation on maize seeds, the embryos of dry maize seeds are irradiated with~(7)Li ions and~(12)C ions as well as ~( 60)Co gamma rays. The results are as follows: ~( 60)Co gamma rays decrease germination impetus and germination rate of maize seeds, while the inhibitory effects of germination impetus and germination rate induced by the heavy ions~(7)Li and~(12)C are not significant. The difference of photosynthetic rates among the plants irradiate...     

聚合物材料的快重离子辐照效应

简要介绍了快重离子辐照损伤的特点,通过与低电离辐射粒子辐照在聚合物材料中产生的效应的类比论述了快重离子辐照在聚合物材料中产生的效应及其研究现状 ,并结合快重离子辐照效应的应用展望了该领域未来的发展.The irradiation effects in polymers induced by swift heavy ions were reviewed in comparison with that induced by low ionization particles based on the characteristics of swift heavy ion irradiations. It is shown that bond breaking and cross linking, gas releasing, amorphization and carbonization of polymers depend strongly on the electronic energy loss. Besides special effects such as alkynes production, can be induced under swift heavy ion irradiation. The perspectives...     

中能重离子在铁氧体材料中的辐照效应

本文系统地评述了中能重离子在铁氧体材料小辐照效应的国际国内研究概况．并指出了利用兰州重离子研究装置（ＨＩＲＦＬ）可进一步开展的工作.This paper gives a systemic review on the recent progress in the study of irradiation effects in ferrite induced by energetic heavy ions, and also gives a suggestion thatsome experiments in this field can be carried out further by Heavy Ion Reseach Facility ofLanzhou(HIRFL ).     

快重离子辐照效应的穆斯堡尔谱学研究

概述了利用穆斯堡尔效应开展的固体材料快重离子辐照效应研究的部分结果 ,并对建立在兰州重离子加速器 (HIRFL)上的在束穆斯堡尔谱学研究装置及其应用作了简要的介绍.Mssbauer spectroscopy study of irradiation effects induced by swift heavy ions in solid materials were briefly presented.Amorphization phenomenon of yttrium iron garnet irradiated by 1 GeV Ar ions has been investigated. For the first time, the nearly complete amorphous state was observed. Stainless steel 316L samples were irradiated with 54 MeV C ions and phase transformation of the samples was observed. HT 9 ferrite steel was irradiated with 510 MeV C ions. Its phase...     

快重离子引起的辐照效应

用PAT、CEMS、SEM和TEM分析观测了HIRFL提供的能量为几十MeV到几百MeV的碳离子在Ni、马氏体时效不锈钢、HT—9铁素体钢和316L不锈钢中引起的辐照效应,包括辐照引起的偏析、脱溶、相变和肿胀,以及辐照肿胀随辐照温度的变化关系,研究了510MeV的碳离子在高纯Ni中的损伤分布,并给出了95MeV的Ar离子模拟宇宙射线在宇宙飞行器中引起数字半导体器件“软故障”的最近结果。 The radiation effects were studied by means of PAT, CEMS, SEM and TEM in nickel,martensitic ageing stainless steel, ferrite steel HT-9 and stainless steel 316L induced by carbon ionswith energy of tens of MeV to hundreds of MeV delivered by HIRFL. It includes segregate,preciptale, phase change and void swelling, as well as temperature-relativity of the irradiationswelling. The damage distribution was also studied in nickel irradiated by 510MeV C~(6+). And the recentresults of Ar ions ...     

2.1GeV?Kr离子在聚碳酸酯膜中引起的辐照效应研究

用傅立叶变换红外光(FTIR)谱仪和紫外/可见光(UV/VIS)谱仪研究了2.1GeVKr离子在聚碳酸酯(PC)膜中产生的效应.研究结果表明,在高能Kr离子辐照下,PC膜中发生了断键、断链和键的重组,炔基的出现是键的断裂和重组的结果.这些效应与辐照剂量和电子能损有关.辐照也使PC膜中发生了从氢化非晶态碳向非晶态碳的转变,在UV/VIS中,波长为380,450和500nm处的相对吸光度随能量沉积密度的增加近似按线性变化.     

22 MeV/u的Fe离子在PET 膜中引起的辐照效应研究

用能量为22 MeV/u的 Fe离子在室温和真空条件下辐照了多层堆叠的半晶质聚酯膜, 采用傅里叶转换红外吸收光谱、 紫外/可见吸收光谱 和X射线衍射技术分析测量了辐照后聚酯膜的微观结构所发生的变化, 详细研究了分子结构的变化和非晶化转变与离子剂量、 离子在样品中的平均电子能损以及吸收剂量的依赖关系． 分析结果表明: 辐照导致化学键的断裂、 新化学键的形成和非晶化转变． 非晶化效应和化学键的断裂随离子剂量和电子能损的增加而增大, 但变化的总量仅依赖于总的吸收剂量, 表明在所涉及的能损范围里, 辐照产生的变化与辐照离子的种类和能量没有直接的关系, 而只决定于材料对辐照离子能量的吸收程度． Semicrystalline polyethylene terephthalate (PET) film stacks were irradiated with 22 MeV/u Fe ions at room temperature under vacuum. Ion beam induced microscopic structural modifications and amorphous transformation were investigated by means of Fourier transform infrared spectrosocopy (FTIR), ultraviolet visible absorption spectrosocopy (UV/Vis) and X ray diffractometer (XRD). It was found that irradiation induces bond breaking, formation of new free radiculs and amorphous transformation. These effects were found to depend on ion fluence , the electronic energy loss and aborbed dose. The creation of alkyne groups was found only at the aborbed dose higher than 5.0 MGy.     

快重离子在固体材料中的强电子激发效应

简要介绍了快重离子在固体材料中强电子激发效应的基本特点、研究现状和在HIRFL上获得的部分实验结果,并对今后的研究工作进行了展望。In this paper the outline of intense electronic excitation effects in solid materials induced by swift heavy ions and international research status were briefly reviewed. Few examples of experimental results obtained on HIRFL were presented. And also the developing tendency in the field was looked into the future.     

FPGA配置片反熔丝PROMs加速器地面单粒子效应特性研究

针对0.13 μm CMOS（Complementary Metal-Oxide-Semiconductor）体硅外延工艺下FPGA（Field Programmable Gate Arrays）配置片反熔丝PROM（Programmable-Read-Only-Memory）进行了单粒子效应（Single Event Effects SEEs）的加速器地面模拟试验研究。以PROM的存储容量、数据类型和工艺差异性为研究变量,考核与验证其在不同种类和能量粒子入射的系列性加速器地面SEEs模拟试验。研究结果表明,相对于8 Mbits PROM而言,空片16 Mbits PROM抗辐射性能最优,且从翻转饱和截面上说,16 Mbits的PROM具备更高的可靠性,优于国外同系列的芯片类型,试验用PROM芯片的单粒子锁定阈值>99.0 MeV·cm2/mg。另一方面,研究0.13 μm CMOS普通与深阱工艺技术下PROM芯片单粒子翻转效应异同性的实验数据表明,在高LET（Linear Energy Transfer）处的两者抗辐射性能并无明显变化,但是低LET处（LET翻转阈值）的加固效果较为明显,即抗辐射技术能力主要体现在LET翻转阈值的提升而非翻转截面的减小。Single event effects (SEEs) have been characterized and investigated on one-time configured devices for field-programmable-gate-arrays (FPGA) of programmable-read-only-memory (PROM) in 0.13 μm Complementary Metal-Oxide-Semiconductor (CMOS) technology.The variables of their memory size,written data and technology have been taken into consideration as the key parameters affecting the SEEs sensitivity when testing and verifying the reliability/radiation tolerance on self-made PROMs by heavy ions.The results show that,16 Mbits PROM within blanked data has been studied that it has better performance to radiation tolerance as compared with the 8 Mbits PROMs.Additionally,16 Mbits PROMs have the higher reliability,if based on the viewpoint of the saturated single event upset cross-section.To the single event latchup,16 Mbits PROMs were exposed to a total fluence of 107 ions/cm2 at the linear energy transfer (LET) of 99.0 MeV·cm2/mg and no obvious fluctuation of current has been observed.Additionally,as comparing the zone of high LET value,0.13 μm CMOS transistors with deep-well technology present a better radiation hardened approach than normal technology,especially in improving the threshold of LET at the zone of low LET value.     

重离子全熔合反应中的Langevin统计涨落

在重离子反应中，尽管统计涨落是很明显的，但是在以前的关于重离子全熔合反应的理论模型中未加考虑．本工作在经典轨道模型框架内，在运动方程中包括了Ｌａｎｇｅｖｉｎ无规力，采用Ｍｏｎｔｅ－Ｃａｒｌｏ轨道抽样方法计算了１００Ｍｏ＋１００Ｍｏ和８６Ｋｒ＋１２３Ｓｂ全熔合反应的几率，并且与实验值进行了比较.It is not considered in the previous theoretical models on the complete fusion reactions, though the statistical fluctuation is very obvious. In the present work in framework of the classical trajetory model the Langevin random force is included in the motion equations. The fusion probabilities for the 100 Mo+ 100 Mo和 86 Kr+ 123 Sb reactions are calculated by Monte Carlo sampling of trajectories. The calculated fusion probabilities are also compared with the...     

金属材料中高能重离子辐照效应的理论描述

简要介绍了高能重离子在金属材料中引起辐照效应的主要理论 ,特别是与电子能损引起的缺陷产生与演化、离子潜径迹形成、辐照相变以及各向异性塑性形变等效应相应的理论描述.Experimental results showed that, for high energy heavy ion irradiations, electronic energy loss could play a dominant role in damage process in solid materials. In order to explain the experimental phenomena and results, a series of theoretical models based on Coulomb explosion or thermal spike mechanisms have been proposed. In the present paper, more attention was paid to theoretical expressions of high energy heavy ion irradiation induced effects in metallic materials ...     

Raman Spectroscopy of Irradiation Effect in Three Carbon Allotropes Induced by Low Energy B Ions

Irradiation effect in three carbon allotropes C60, diamond and highly oriented pyrolytic graphite （HOPG） induced by 170keV B ions, mainly including the process of the damage creation, is investigated by means of Raman spectroscopy technique. The differences on irradiation sensitivity and structural stability for C60, HOPG and diamond are compared. The analysis results indicate that C60 is the most sensitive for B ions irradiation, diamond is the second one and the structure of HOPG is cross sections σ of C60, diamond and HOPG deduced from 1.31 × 10^-15 cm^2, respectively. the most stable under B ion irradiation. The damage the Raman spectra are 7.78 × 10^-15, 6.38 × 10^-15 and1.31 x 10-15 cm^2, respectively.